JP2016115729A - Method of manufacturing light-emitting device - Google Patents

Method of manufacturing light-emitting device Download PDF

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JP2016115729A
JP2016115729A JP2014251332A JP2014251332A JP2016115729A JP 2016115729 A JP2016115729 A JP 2016115729A JP 2014251332 A JP2014251332 A JP 2014251332A JP 2014251332 A JP2014251332 A JP 2014251332A JP 2016115729 A JP2016115729 A JP 2016115729A
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light
light emitting
emitting device
wavelength conversion
manufacturing
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JP6515515B2 (en
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三賀　大輔
Daisuke Sanga
大輔 三賀
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device, the bond strength of bumps of which is increased.SOLUTION: A method of manufacturing a light-emitting device includes a bonding step for bonding a plurality of light-emitting elements 10 directly to a tabular wavelength conversion plate 30 for converting the light emitted from the light-emitting elements 10 into light of a different wavelength, an electrode formation step for providing pad electrodes 20A, 20B on the surface opposite to the joint surface to the wavelength conversion plate 30, for each of the plurality of light-emitting elements 10 bonded thereto, by compression, and a first individualization step for cutting the wavelength conversion plate 30 and individualizing the light-emitting elements 10.SELECTED DRAWING: Figure 2

Description

本発明は、発光装置の製造法に関する。   The present invention relates to a method for manufacturing a light emitting device.

一般に発光ダイオード（Light Emitting Diode：ＬＥＤ）やレーザダイオード（Laser Diode：ＬＤ）等の発光素子は、バックライト等に用いる各種光源、照明、信号機、大型ディスプレイ等に幅広く利用されている。   In general, light emitting elements such as light emitting diodes (LEDs) and laser diodes (LDs) are widely used for various light sources used in backlights, illumination, traffic lights, large displays, and the like.

このような発光素子は、近年の装置の小型化、薄型化の潮流に従って、より一層の小型化が求められているところである。所謂チップサイズパッケージ（Chip Size Package：ＣＳＰ）の発光装置を実現するには、実装のし易さ等を考慮し、外部接続用電極となるバンプをワイヤーボンディング装置により形成する方法が一般に採用されている。   Such light-emitting elements are required to be further downsized in accordance with the trend of recent downsizing and thinning of devices. In order to realize a light emitting device of a so-called chip size package (CSP), a method of forming bumps serving as external connection electrodes by a wire bonding device is generally adopted in consideration of ease of mounting and the like. Yes.

しかしながら従来、バンプの接合強度をさらに高める余地があった。   Conventionally, however, there is room for further increasing the bonding strength of the bumps.

特開２０１３−２５１４１７号公報JP 2013-251417 A

そこで、本発明の目的の一は、バンプの接合強度をより高めた発光装置を提供することにある。   Accordingly, an object of the present invention is to provide a light-emitting device with higher bump bonding strength.

上記の目的を達成するために、本発明の一の側面に係る発光装置によれば、複数の発光素子を、前記発光素子の発光を異なる波長の光に変換する板状の波長変換板に、直接接合する接合工程と、前記波長変換板に接合された複数の前記発光素子のそれぞれにおいて、前記波長変換板との接合面の反対側の面に、パッド電極を加圧により設ける電極形成工程と、前記波長変換板を切断することにより、発光素子ごとに個片化する第一個片化工程とを含むことができる。   In order to achieve the above object, according to a light emitting device according to one aspect of the present invention, a plurality of light emitting elements are converted into a plate-shaped wavelength conversion plate that converts light emitted from the light emitting elements into light of different wavelengths. A bonding step of directly bonding, and an electrode forming step of providing a pad electrode by pressing on a surface opposite to the bonding surface with the wavelength conversion plate in each of the plurality of light emitting elements bonded to the wavelength conversion plate; And a first singulation step of separating each light emitting element by cutting the wavelength conversion plate.

上記構成により、波長変換板に、接着剤等を用いることなく直接接合によって発光素子を固定できる。また、接着剤等を使用しないで発光素子を波長変換板と一体化したことで、発光素子にパッド電極を設ける際のエネルギーが発光素子に対して効率よく伝達される結果、パッド電極と発光素子との密着性が高められ、パッド電極の剥離を低減して信頼性を向上できる。   With the above configuration, the light emitting element can be fixed to the wavelength conversion plate by direct bonding without using an adhesive or the like. Further, since the light emitting element is integrated with the wavelength conversion plate without using an adhesive or the like, energy when the pad electrode is provided on the light emitting element is efficiently transmitted to the light emitting element. As a result, the pad electrode and the light emitting element It is possible to improve the reliability by reducing the peeling of the pad electrode.

本発明の実施形態１に係る発光装置を示す模式平面図である。It is a schematic plan view which shows the light-emitting device concerning Embodiment 1 of this invention. 図１の発光装置のＩＩ−ＩＩ線における模式断面図である。It is a schematic cross section in the II-II line of the light-emitting device of FIG. 本発明の実施形態１に係る発光装置の製造工程を示すフローチャートである。It is a flowchart which shows the manufacturing process of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法における直接接合工程を示す模式断面図である。It is a schematic cross section which shows the direct joining process in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法におけるバンプの形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the bump in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法における粘着シート上での位置決め工程を示す模式断面図である。It is a schematic cross section which shows the positioning process on the adhesive sheet in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法における光反射性樹脂の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the light reflection resin in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法における外部接続用電極の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the electrode for external connection in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る発光装置の製造方法における個片化工程を示す模式断面図である。It is a schematic cross section which shows the individualization process in the manufacturing method of the light-emitting device which concerns on Embodiment 1 of this invention. 本発明の実施形態２に係る発光装置を示す模式平面図である。It is a schematic plan view which shows the light-emitting device which concerns on Embodiment 2 of this invention. 図１０の発光装置のＸＩ−ＸＩ線における模式断面図である。It is a schematic cross section in the XI-XI line of the light-emitting device of FIG. 波長変換板のチッピング部から光の漏れが生じる様子を示す模式断面図である。It is a schematic cross section which shows a mode that the light leakage arises from the chipping part of a wavelength conversion board. 波長変換板のエッジ近傍から光の漏れが生じる様子を示す模式断面図である。It is a schematic cross section which shows a mode that the light leak arises from the edge vicinity of a wavelength conversion board. 本発明の実施形態２に係る発光装置の製造方法における外部接続用電極の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the electrode for external connection in the manufacturing method of the light-emitting device which concerns on Embodiment 2 of this invention. 変形例に係る発光装置を示す模式平面図である。It is a schematic plan view which shows the light-emitting device which concerns on a modification. 図１５の発光装置のＸＶＩ−ＸＶＩ線における模式断面図である。It is a schematic cross section in the XVI-XVI line of the light-emitting device of FIG. 図１５の発光装置をサブマウントに実装した様子を示す模式断面図である。It is a schematic cross section which shows a mode that the light-emitting device of FIG. 15 was mounted in the submount. 本発明の実施形態３に係る発光装置を示す模式平面図である。It is a schematic plan view which shows the light-emitting device which concerns on Embodiment 3 of this invention. 図１８の発光装置のＸＩＸ−ＸＩＸ線における模式断面図である。を示す模式断面図である。It is a schematic cross section in the XIX-XIX line of the light-emitting device of FIG. It is a schematic cross section which shows. 本発明の実施形態３に係る発光装置の製造方法におけるパッド電極の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the pad electrode in the manufacturing method of the light-emitting device which concerns on Embodiment 3 of this invention. 本発明の実施形態３に係る発光装置の製造方法におけるリフレクタ部の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the reflector part in the manufacturing method of the light-emitting device which concerns on Embodiment 3 of this invention. 本発明の実施形態３に係る発光装置の製造方法における支持体上での位置決め工程を示す模式断面図である。It is a schematic cross section which shows the positioning process on the support body in the manufacturing method of the light-emitting device which concerns on Embodiment 3 of this invention. 本発明の実施形態３に係る発光装置の製造方法における光反射性樹脂の形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the light reflection resin in the manufacturing method of the light-emitting device which concerns on Embodiment 3 of this invention. 本発明の実施形態４に係る発光装置を示す模式断面図である。It is a schematic cross section which shows the light-emitting device which concerns on Embodiment 4 of this invention. 本発明の実施形態４に係る発光装置の製造方法におけるレンズの圧縮成形工程を示す模式断面図である。It is a schematic cross section which shows the compression molding process of the lens in the manufacturing method of the light-emitting device which concerns on Embodiment 4 of this invention. 本発明の実施形態５に係る発光装置の製造方法におけるレンズの形成工程を示す模式断面図である。It is a schematic cross section which shows the formation process of the lens in the manufacturing method of the light-emitting device which concerns on Embodiment 5 of this invention. 本発明の実施形態５に係る発光装置の製造方法における発光素子の接合形成工程を示す模式断面図である。It is a schematic cross section which shows the junction formation process of the light emitting element in the manufacturing method of the light-emitting device which concerns on Embodiment 5 of this invention.

以下、本発明の実施の形態を図面に基づいて説明する。ただし、以下に示す実施の形態は、本発明の技術思想を具体化するための例示であって、本発明は以下のものに特定されない。また、本明細書は特許請求の範囲に示される部材を、実施の形態の部材に特定するものでは決してない。特に実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。なお、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。さらに、本発明を構成する各要素は、複数の要素を同一の部材で構成して一の部材で複数の要素を兼用する態様としてもよいし、逆に一の部材の機能を複数の部材で分担して実現することもできる。
（実施形態１） Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below is an example for embodying the technical idea of the present invention, and the present invention is not limited to the following. Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, and are merely explanations. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are configured by the same member and the plurality of elements are shared by one member. It can also be realized by sharing.
(Embodiment 1)

図１に、本発明の実施形態１に係る発光装置１００の平面図を、図２に、この発光装置１００の断面図を、それぞれ示す。これらの図に示す発光装置１００は、発光素子１０を含む。発光素子１０は、第一導電型を示す第一半導体層１と、第一導電型とは異なる第二導電型を示す第二半導体層２と、第一半導体層１と第二半導体層２との間に配置された活性層３と、第一半導体層１と接続された第一パッド電極２０Ａと、第二半導体層２と接続され、第一パッド電極２０Ａと同一面側に設けられている第二パッド電極２０Ｂとを含む。第一半導体層１は例えばｎ型半導体層、第二半導体層２は例えばｐ型半導体層とでき、これらの半導体層は窒化物半導体層が好適に利用できる。   FIG. 1 is a plan view of the light emitting device 100 according to Embodiment 1 of the present invention, and FIG. 2 is a cross-sectional view of the light emitting device 100. The light emitting device 100 shown in these drawings includes a light emitting element 10. The light emitting element 10 includes a first semiconductor layer 1 having a first conductivity type, a second semiconductor layer 2 having a second conductivity type different from the first conductivity type, a first semiconductor layer 1 and a second semiconductor layer 2. The active layer 3 disposed between the first semiconductor layer 1, the first pad electrode 20 </ b> A connected to the first semiconductor layer 1, the second semiconductor layer 2, and the same layer as the first pad electrode 20 </ b> A. Second pad electrode 20B. The first semiconductor layer 1 can be, for example, an n-type semiconductor layer, and the second semiconductor layer 2 can be, for example, a p-type semiconductor layer. A nitride semiconductor layer can be suitably used as these semiconductor layers.

発光素子１０は、第一パッド電極２０Ａと第二パッド電極２０Ｂとが形成されている電極形成面と、電極形成面とは反対側に位置する発光面と、を有している。発光装置１００において、電極形成面側の面には第一パッド電極２０Ａと第二パッド電極２０Ｂとが露出して設けられており、外部接続用電極２２がそれぞれ設けられている。第一パッド電極２０Ａおよび第二パッド電極２０Ｂは、それぞれ第一半導体層１と第二半導体層２と電気的接続されている。パッド電極２０は、例えば、ＡｕまたはＡｕを主成分とする合金とすることができる。外部接続用電極２２は、発光装置１００の外部の部材と電気的に接続するための部材であり、例えば配線電極パターン、メタライズ端子等とすることができる。この発光装置１００は、いわゆるチップサイズパッケージ（ＣＳＰ）と呼ばれる小型の装置、例えば発光ダイオード（ＬＥＤ）として好適に利用できる。
（波長変換板３０） The light emitting element 10 has an electrode forming surface on which the first pad electrode 20A and the second pad electrode 20B are formed, and a light emitting surface located on the opposite side of the electrode forming surface. In the light emitting device 100, the first pad electrode 20 </ b> A and the second pad electrode 20 </ b> B are exposed on the surface on the electrode formation surface side, and the external connection electrodes 22 are provided respectively. The first pad electrode 20A and the second pad electrode 20B are electrically connected to the first semiconductor layer 1 and the second semiconductor layer 2, respectively. The pad electrode 20 can be made of, for example, Au or an alloy containing Au as a main component. The external connection electrode 22 is a member for electrically connecting to an external member of the light emitting device 100, and can be a wiring electrode pattern, a metallized terminal, or the like, for example. The light emitting device 100 can be suitably used as a small device called a so-called chip size package (CSP), for example, a light emitting diode (LED).
(Wavelength conversion plate 30)

また発光素子１０の発光面には、波長変換板３０が直接接合により接合されている。波長変換板３０は、発光素子１０の発光を異なる波長の光に変換する板状の部材である。この波長変換板３０は、蛍光体等の波長変換材を含有させている。蛍光体には、例えばＹＡＧ蛍光体が使用できる。
（光反射性樹脂４０） The wavelength conversion plate 30 is bonded to the light emitting surface of the light emitting element 10 by direct bonding. The wavelength conversion plate 30 is a plate-like member that converts light emitted from the light emitting element 10 into light having different wavelengths. The wavelength conversion plate 30 contains a wavelength conversion material such as a phosphor. For example, a YAG phosphor can be used as the phosphor.
(Light reflecting resin 40)

さらに波長変換板３０の側面と、発光素子１０との接合面側における発光素子１０との接合領域以外の露出面と、発光素子１０の側面及び電極形成面の一部と、は光反射性樹脂４０で被覆されている。このような光反射性樹脂４０は、例えば、ＴｉＯ2、ＳｉＯ2等の光散乱部材が含有された樹脂が好適に利用できる。
（発光装置１００の製造工程） Further, the side surface of the wavelength conversion plate 30, the exposed surface other than the bonding region with the light emitting element 10 on the bonding surface side with the light emitting element 10, and the side surface of the light emitting element 10 and a part of the electrode forming surface are light reflecting resin. 40. As such a light reflective resin 40, for example, a resin containing a light scattering member such as TiO 2 or SiO 2 can be suitably used.
(Manufacturing process of light emitting device 100)

この発光装置１００の製造工程を、図３のフローチャート及び図４〜図９に基づいて説明する。
（波長選別工程） A manufacturing process of the light emitting device 100 will be described with reference to the flowchart of FIG. 3 and FIGS.
(Wavelength selection process)

まず、ステップＳ１において、半導体ウェハから切り出した発光素子１０を、発光ピーク波長に応じて選別する。このような選別を予め行っておくことで、波長の揃った発光素子が設けられた発光装置を得ることが容易に行える。さらに発光ピーク波長に応じて選別した状態で波長変換板と固定できるため、発光素子の波長に応じた波長変換板の組み合わせを選択できることから、発光装置の出力光を揃えた状態での製造が可能となる。なお、この工程は必須ではなく、製造工程を簡略化するために選別を行わなくてもよい。
（直接接合工程） First, in step S1, the light emitting elements 10 cut out from the semiconductor wafer are selected according to the emission peak wavelength. By performing such sorting in advance, it is possible to easily obtain a light-emitting device provided with light-emitting elements with uniform wavelengths. Furthermore, since it can be fixed to the wavelength conversion plate in a state selected according to the emission peak wavelength, a combination of wavelength conversion plates according to the wavelength of the light emitting element can be selected, so that it is possible to manufacture with the output light of the light emitting device aligned. It becomes. Note that this step is not essential, and selection may not be performed in order to simplify the manufacturing process.
(Direct bonding process)

次にステップＳ２において、図４に示すように、選別された複数の発光素子１０を、予め用意した波長変換板３０に、直接接合する。直接接合は、例えば表面活性化結合、水酸基結合、原子拡散結合が利用できる。表面活性化結合は、接合面を真空中で処理することで化学結合しやすい表面状態として接合面同士を結合する方法である。水酸基結合は、例えば原子層堆積法などにより接合面に水酸基を形成し、それぞれの接合面の水酸基同士を結合させる方法である。原子拡散結合は、それぞれの接合面に１原子層相当の膜厚の金属膜を形成し、真空中や不活性ガス雰囲気でそれぞれの接合面を接触させることで金属原子同士を結合させる方法である。このような直接接合により、常温に近い環境下で発光素子１０と波長変換板３０とを一体化することができる。
（電極形成工程） Next, in step S2, as shown in FIG. 4, the plurality of selected light emitting elements 10 are directly joined to the wavelength conversion plate 30 prepared in advance. For direct bonding, for example, a surface activated bond, a hydroxyl group bond, or an atomic diffusion bond can be used. Surface activated bonding is a method of bonding bonding surfaces to each other in a surface state that facilitates chemical bonding by treating the bonding surfaces in a vacuum. Hydroxyl bonding is a method in which, for example, a hydroxyl group is formed on the bonding surface by an atomic layer deposition method or the like, and the hydroxyl groups on each bonding surface are bonded to each other. Atomic diffusion bonding is a method in which metal atoms having a thickness equivalent to one atomic layer are formed on each bonding surface, and metal atoms are bonded to each other by bringing the bonding surfaces into contact in a vacuum or in an inert gas atmosphere. . By such direct bonding, the light emitting element 10 and the wavelength conversion plate 30 can be integrated in an environment close to normal temperature.
(Electrode formation process)

さらにステップＳ３において、図５に示すように、波長変換板３０に接合された複数の発光素子１０のそれぞれに対し、波長変換板３０との接合面の反対側の面にパッド電極２０を、加圧により設ける。ここで、発光素子１０と波長変換板３０とは既に直接接合によって強固に一体化されているので、パッド電極２０形成のために加圧されても、この加圧のエネルギーが接合部分で吸収、分散される事態を回避して、パッド電極２０の接合強度を高めることができる。すなわち、従来のような接着剤を使用した接合と比べ、パッド電極２０の接合のためのエネルギーをパッド電極２０と発光素子１０との界面に伝達させ易くして密着力を高め、パッド電極２０の剥離を低減して信頼性を改善できる。パッド電極２０には、バンプやめっき層が好適に利用できる。   Further, in step S 3, as shown in FIG. 5, a pad electrode 20 is added to the surface opposite to the bonding surface with the wavelength conversion plate 30 for each of the plurality of light emitting elements 10 bonded to the wavelength conversion plate 30. It is provided by pressure. Here, since the light emitting element 10 and the wavelength conversion plate 30 are already firmly integrated by direct bonding, even if the pressure is applied to form the pad electrode 20, the energy of the pressure is absorbed by the bonding portion. By avoiding the situation of being dispersed, the bonding strength of the pad electrode 20 can be increased. That is, compared to the conventional bonding using an adhesive, the energy for bonding the pad electrode 20 can be easily transmitted to the interface between the pad electrode 20 and the light emitting element 10 to increase the adhesion, Reliability can be improved by reducing peeling. For the pad electrode 20, a bump or a plating layer can be suitably used.

ここでパッド電極２０は、加熱しながら形成してもよい。特に波長変換板３０に発光素子１０を直接接合しているため、従来のように接着剤として使用した樹脂が加熱により変形することがなく、密着性よく電極を形成することができる。   Here, the pad electrode 20 may be formed while heating. In particular, since the light emitting element 10 is directly bonded to the wavelength conversion plate 30, the resin used as an adhesive as in the prior art is not deformed by heating, and an electrode can be formed with good adhesion.

あるいはパッド電極２０は、超音波を印加しながら形成してもよい。同様に直接接合で発光素子１０と波長変換板３０とが一体的に接合されているため、超音波のエネルギーを効率よく印加してパッド電極２０を接合できる。なお、超音波の印加と上述した加熱とを同時に行いながら電極を形成してもよく、さらに効率よく密着性に優れた電極を形成することができる。
（第一個片化工程） Alternatively, the pad electrode 20 may be formed while applying ultrasonic waves. Similarly, since the light emitting element 10 and the wavelength conversion plate 30 are integrally bonded by direct bonding, the pad electrode 20 can be bonded by efficiently applying ultrasonic energy. Note that the electrode may be formed while simultaneously applying the ultrasonic wave and the above-described heating, and an electrode having excellent adhesion can be formed more efficiently.
(First piece separation process)

次いでステップＳ４において、図５において破線で示すように、波長変換板３０を切断することにより、発光素子１０ごとに個片化する。
（光反射性樹脂形成工程） Next, in step S4, as shown by a broken line in FIG. 5, the wavelength conversion plate 30 is cut to be separated into individual light emitting elements 10.
(Light reflective resin forming process)

さらにステップＳ５において、図６に示すように、個片化した複数の波長変換板３０を有する発光素子１０を、波長変換板３０が支持体側となるように支持体ＳＰ上に、離間させて位置決めした状態に並べる。支持体ＳＰには、例えば粘着シート等が利用できる。   Further, in step S5, as shown in FIG. 6, the light emitting element 10 having the plurality of separated wavelength conversion plates 30 is positioned on the support SP so that the wavelength conversion plate 30 is on the support side. Arrange them in the same state. As the support SP, for example, an adhesive sheet or the like can be used.

次いで、図７の断面図に示すように、個片化された波長変換板３０を有する発光素子１０同士の間に、光反射性樹脂４０を充填して形成する。光反射性樹脂４０は、好ましくは圧縮成形する。圧縮成形とは、熱硬化性樹脂等を加圧しながら加熱することで硬化させる方法である。圧縮成形により光反射性樹脂４０を形成した後、パッド電極２０が形成された電極形成面側から光反射性樹脂４０を研磨して、光反射性樹脂４０の電極形成面側の面からパッド電極２０を露出させる。また必要に応じて再配線を行い、パッド電極２０の端子を形成してもよい。
（外部接続用電極形成工程） Next, as shown in the cross-sectional view of FIG. 7, the light-reflecting resin 40 is filled between the light-emitting elements 10 having the individual wavelength conversion plates 30. The light reflective resin 40 is preferably compression molded. Compression molding is a method of curing by heating a thermosetting resin or the like while applying pressure. After the light reflective resin 40 is formed by compression molding, the light reflective resin 40 is polished from the electrode forming surface side where the pad electrode 20 is formed, and the pad electrode is formed from the surface of the light reflective resin 40 on the electrode forming surface side. 20 is exposed. Further, rewiring may be performed as necessary to form the terminal of the pad electrode 20.
(External connection electrode formation process)

さらにステップＳ６において、図８に示すように、光反射性樹脂４０の電極形成面側の面から露出されたパッド電極２０と接合するように、外部接続用電極２２を形成する。外部接続用電極２２の形成には、フォトリソグラフィやスパッタリング、エッチングなどの手法が適宜利用できる。
（支持体除去工程） Further, in step S6, as shown in FIG. 8, the external connection electrode 22 is formed so as to be joined to the pad electrode 20 exposed from the surface of the light reflecting resin 40 on the electrode forming surface side. For the formation of the external connection electrode 22, techniques such as photolithography, sputtering, and etching can be used as appropriate.
(Support removal process)

さらにステップＳ７において、図８の状態から支持体ＳＰを除去する。支持体ＳＰの除去後は、波長変換板３０の接合面の反対側の面と光反射性樹脂４０の支持体ＳＰが設けられていた面とが同一面となる。
（第二個片化工程） Further, in step S7, the support SP is removed from the state shown in FIG. After removal of the support SP, the surface opposite to the bonding surface of the wavelength conversion plate 30 and the surface on which the support SP of the light reflecting resin 40 is provided are the same surface.
(Second piece separation process)

さらにステップＳ８において、図８において破線で示すように、光反射性樹脂４０を切断することにより、図９（図８と上下を入れ替えている）に示すように、発光素子１０毎に個片化する。   Further, in step S8, as shown by a broken line in FIG. 8, the light-reflective resin 40 is cut, and as shown in FIG. To do.

このような構成により、波長変換板３０に、接着剤等を用いることなく直接接合によって発光素子１０を固定できる。また、接着剤等を使用しないで発光素子１０と波長変換板３０とを一体化したことで、発光素子１０にパッド電極２０を設ける際のエネルギーが発光素子１０に対して効率よく伝達される結果、パッド電極２０と発光素子１０との密着性が高められ、パッド電極２０の発光素子１０からの剥離を低減して信頼性を向上できる。加えて、予め発光素子１０を半導体ウェハから切り出して、発光ピーク波長に応じて選別した状態で波長変換板３０と固定できるため、発光素子１０の波長に応じた波長変換板３０の組み合わせを選択できる。その結果、発光装置の出力光を揃えた状態での製造が可能となり、半導体ウェハの段階で波長変換板３０と固定する従来の製造方法に比べ、歩留まりを大幅に改善できる。
（実施形態２） With such a configuration, the light emitting element 10 can be fixed to the wavelength conversion plate 30 by direct bonding without using an adhesive or the like. In addition, as a result of integrating the light emitting element 10 and the wavelength conversion plate 30 without using an adhesive or the like, energy when the pad electrode 20 is provided on the light emitting element 10 is efficiently transmitted to the light emitting element 10. Adhesiveness between the pad electrode 20 and the light emitting element 10 can be improved, and peeling of the pad electrode 20 from the light emitting element 10 can be reduced to improve reliability. In addition, since the light-emitting element 10 can be cut out from the semiconductor wafer in advance and fixed to the wavelength conversion plate 30 in a state selected according to the emission peak wavelength, a combination of the wavelength conversion plates 30 corresponding to the wavelength of the light-emitting element 10 can be selected. . As a result, it is possible to manufacture the light emitting device in a state where output lights are aligned, and the yield can be greatly improved as compared with the conventional manufacturing method in which the light emitting device is fixed to the wavelength conversion plate 30 at the stage of the semiconductor wafer.
(Embodiment 2)

また発光装置は、波長変換板３０と光反射性樹脂４０との界面を被覆し、遮光性を有する枠状の遮光膜５０をさらに備えることもできる。このような発光装置２００を実施形態２として、図１０及び図１１に示す。この構成により、波長変換板３０と光反射性樹脂４０との界面からの光漏れを遮光膜５０でもって遮断し、見切りのよい発光装置２００を得ることができる。   The light emitting device may further include a frame-shaped light shielding film 50 that covers the interface between the wavelength conversion plate 30 and the light reflective resin 40 and has light shielding properties. Such a light emitting device 200 is shown as Embodiment 2 in FIGS. With this configuration, light leakage from the interface between the wavelength conversion plate 30 and the light-reflecting resin 40 can be blocked by the light-shielding film 50, and the light-emitting device 200 with good parting can be obtained.

従来の発光装置では、例えば図１２に示すように、波長変換板１１３０のチッピング部から、半導体素子１１００の光の漏れが生じることがあった。あるいは図１３に示すように、波長変換板１１３０のエッジ近傍から、光反射性樹脂１１４０を透過して光の漏れが生じることがあった。このように、発光装置の光出射面側で、波長変換板の周囲で光が漏れることにより見切りが悪くなるという問題があった。   In the conventional light emitting device, for example, as shown in FIG. 12, light leakage from the semiconductor element 1100 may occur from the chipping portion of the wavelength conversion plate 1130. Alternatively, as shown in FIG. 13, light may leak from the vicinity of the edge of the wavelength conversion plate 1130 through the light reflective resin 1140. As described above, there is a problem that, on the light emitting surface side of the light emitting device, the parting is worsened due to light leaking around the wavelength conversion plate.

これに対して、本発明の実施形態２に係る発光装置２００では、遮光膜５０を付加することで、このような漏れ光を抑制して見切りを改善することができる。具体的には、図１０及び図１１に示すように、波長変換板３０と光反射性樹脂４０との界面を被覆するように遮光膜５０を配置する。遮光膜５０は、平面視において枠状で、遮光性を有する素材で構成される。例えば、黒色の顔料を含んだ樹脂等が好適に利用できる。
（遮光膜形成工程） On the other hand, in the light emitting device 200 according to Embodiment 2 of the present invention, by adding the light shielding film 50, it is possible to suppress such leakage light and improve the parting. Specifically, as shown in FIGS. 10 and 11, the light shielding film 50 is disposed so as to cover the interface between the wavelength conversion plate 30 and the light reflective resin 40. The light shielding film 50 has a frame shape in a plan view and is made of a light shielding material. For example, a resin containing a black pigment can be suitably used.
(Shading film forming process)

このような遮光膜５０を形成するには、例えば上述した発光装置の製造工程において、第二個片化工程Ｓ８の前に支持体ＳＰを除去し、支持体ＳＰが除かれた側の面において、波長変換材３０の周縁と光反射性樹脂４０とを跨いで被覆する遮光膜５０を形成する。具体的には、図１４の断面図に示すように、製造工程の途中で複数の発光素子１０が精度よく並べられた状態を利用し、外部接続用電極２２を形成するのと同様の要領で、波長変換板３０と光反射性樹脂４０との界面に遮光膜５０をパターン形成する。このとき、支持体ＳＰが除かれた側の面において、波長変換板３０と光反射性樹脂４０とが略同一平面上に位置していることが好ましい。このようにすれば、波長変換板３０と光反射性樹脂４０との界面に遮光膜５０を形成しやすくなる。その後、必要に応じて個片化を行い、図１０及び図１１に示すような遮光膜５０を形成した発光装置２００が得られる。
（変形例） In order to form such a light-shielding film 50, for example, in the manufacturing process of the light emitting device described above, the support SP is removed before the second singulation step S8, and the surface on the side where the support SP is removed is formed. Then, the light shielding film 50 that covers the periphery of the wavelength conversion material 30 and the light reflective resin 40 is formed. Specifically, as shown in the cross-sectional view of FIG. 14, using a state in which a plurality of light emitting elements 10 are accurately arranged in the course of the manufacturing process, the same procedure as that for forming the external connection electrode 22 is performed. Then, a light shielding film 50 is formed on the interface between the wavelength conversion plate 30 and the light reflective resin 40. At this time, it is preferable that the wavelength conversion plate 30 and the light-reflecting resin 40 are located on substantially the same plane on the surface on which the support SP is removed. If it does in this way, it will become easy to form the light shielding film 50 in the interface of the wavelength conversion board 30 and the light reflection resin 40. FIG. Thereafter, the light-emitting device 200 is obtained by performing individualization as necessary and forming the light-shielding film 50 as shown in FIGS. 10 and 11.
(Modification)

なお、以上の例では発光素子を１個備える発光装置を構成する例を説明した。ただ、本発明はこの構成に限らず、一の発光装置に２以上の発光素子を含めることもできる。例えば図１５及び図１６に示すように、一枚の拡張した波長変換板３０に、複数個の発光素子１０を直接接合した発光装置３００を得ることもできる。このように一の発光装置に使用する発光素子１０の個数を調整することで、発光装置に必要な光量や出力を実現できる。また上述した図１５及び図１６の例では、横方向に発光素子１０を一列（図１６の例では５個）に並べた発光装置３００を示しているが、本発明はこの構成に限られず、平面視において発光素子１０を縦横に並べたマトリックス状の発光装置とすることもできる。   In the above example, the example in which the light emitting device including one light emitting element is configured has been described. However, the present invention is not limited to this structure, and one light emitting device can include two or more light emitting elements. For example, as shown in FIGS. 15 and 16, it is possible to obtain a light emitting device 300 in which a plurality of light emitting elements 10 are directly bonded to one extended wavelength conversion plate 30. In this way, by adjusting the number of light emitting elements 10 used in one light emitting device, it is possible to realize the light amount and output necessary for the light emitting device. 15 and 16 described above show the light emitting device 300 in which the light emitting elements 10 are arranged in a row (five in the example of FIG. 16) in the horizontal direction, but the present invention is not limited to this configuration. It can also be set as the matrix-form light-emitting device which arranged the light emitting element 10 vertically and horizontally in planar view.

また、図１５及び図１６に示すように遮光膜５０を設けた状態の発光装置３００を、必要に応じてサブマウント上に二次実装した発光装置とすることもできる。一例として、実施形態２に係る発光装置をサブマウント６０に実装した発光装置４００の断面図を、図１７に示す。
（実施形態３） Further, as shown in FIGS. 15 and 16, the light emitting device 300 in which the light shielding film 50 is provided may be a light emitting device that is secondarily mounted on the submount as necessary. As an example, FIG. 17 shows a cross-sectional view of a light emitting device 400 in which the light emitting device according to Embodiment 2 is mounted on a submount 60.
(Embodiment 3)

さらに発光装置は、発光素子１０の側面から波長変換板３０にかけて延長されたリフレクタ部７０を備えることもできる。発光素子１０の側面から出射される光を、発光素子１０の光取り出し面側に反射させるリフレクタ部を設けることで、光取り出し面の正面輝度を高めることができる。このような例を実施形態３に係る発光装置５００として、図１８及び図１９に示す。リフレクタ部７０は、発光素子１０の側面から傾斜して張り出したフィレット状に形成される。このリフレクタ部７０は、透光性の樹脂等で形成される。リフレクタ部７０に使用する樹脂としては、シリコーン樹脂やエポキシ樹脂等が好適に利用できる。
（リフレクタ形成工程） Further, the light emitting device may include a reflector unit 70 that extends from the side surface of the light emitting element 10 to the wavelength conversion plate 30. By providing a reflector that reflects the light emitted from the side surface of the light emitting element 10 to the light extraction surface side of the light emitting element 10, the front luminance of the light extraction surface can be increased. Such an example is shown in FIGS. 18 and 19 as the light emitting device 500 according to the third embodiment. The reflector unit 70 is formed in a fillet shape that protrudes from the side surface of the light emitting element 10 in an inclined manner. The reflector part 70 is made of a light-transmitting resin or the like. As the resin used for the reflector portion 70, a silicone resin, an epoxy resin, or the like can be suitably used.
(Reflector forming process)

このようなリフレクタ部７０を形成するには、例えば上述した発光装置１００の製造工程において、図５に示す電極形成工程の後に複数の発光素子１０のそれぞれについて、発光素子１０の側面と波長変換材３０の接合面側の面とを連続して被覆するようにリフレクタ部７０を形成する。具体的には、図２０に示すように、波長変換板３０上に直接接合された各発光素子１０に対し、パッド電極２０を形成する。この状態で、図２１に示すように、直接接合された発光素子１０の周囲に、リフレクタ部７０を形成する。例えば、リフレクタ部７０を構成する透光性の樹脂を液状の状態で発光素子１０の周囲に塗布して、這い上がり効果によってリフレクタ部７０の傾斜面を形成する。あるいは、透光性の樹脂を発光素子１０の周囲に充填し、硬化させた状態で、ダイシングブレードなどで切削加工してもよい。あるいはまた、樹脂成型によって所望の形状のリフレクタ部を形成することもできる。   In order to form such a reflector portion 70, for example, in the manufacturing process of the light emitting device 100 described above, the side surface of the light emitting element 10 and the wavelength conversion material for each of the plurality of light emitting elements 10 after the electrode forming process shown in FIG. The reflector portion 70 is formed so as to continuously cover the surface of the 30 joining surface side. Specifically, as shown in FIG. 20, a pad electrode 20 is formed for each light emitting element 10 directly bonded on the wavelength conversion plate 30. In this state, as shown in FIG. 21, the reflector portion 70 is formed around the light emitting element 10 directly bonded. For example, a translucent resin constituting the reflector unit 70 is applied around the light emitting element 10 in a liquid state, and the inclined surface of the reflector unit 70 is formed by a creeping effect. Alternatively, a light-transmitting resin may be filled around the light emitting element 10 and cut with a dicing blade or the like in a cured state. Or the reflector part of a desired shape can also be formed by resin molding.

さらに図２２に示すように、発光素子１０毎に、あるいは所望の発光素子１０の個数毎に、波長変換板３０を切断して個片化し、粘着シート等の支持体ＳＰ上に配置する。またダイシングでリフレクタ部７０を形成する場合は、別途支持体ＳＰ上に配置せずとも、ダイシングシート上に固定した状態でもって代用することもできる。   Further, as shown in FIG. 22, the wavelength conversion plate 30 is cut into individual pieces for each light emitting element 10 or for each desired number of light emitting elements 10 and placed on a support SP such as an adhesive sheet. In addition, when the reflector part 70 is formed by dicing, the reflector part 70 can be substituted by being fixed on the dicing sheet without being separately disposed on the support SP.

そして図２３に示すように、光反射性樹脂４０を圧縮成形する。これにより、リフレクタ部７０の周囲が光反射性樹脂４０で充填される結果、光反射性樹脂４０で囲まれたリフレクタ部７０が形成される。最後に、上記図７、図８、図９等に基づいて説明したとおり、外部接続用電極形成工程Ｓ６、支持体除去工程Ｓ７、第二個片化工程Ｓ８を経て、図１８及び図１９に示すリフレクタ部７０を備える発光装置５００が得られる。これにより、リフレクタ部７０によって発光素子１０の側面から漏れる光を波長変換板３０に案内して、光の取り出し効率を改善できる。
（実施形態４） Then, as shown in FIG. 23, the light reflective resin 40 is compression molded. Thereby, as a result of filling the periphery of the reflector part 70 with the light reflective resin 40, the reflector part 70 surrounded by the light reflective resin 40 is formed. Finally, as described based on FIG. 7, FIG. 8, FIG. 9 and the like, after the external connection electrode forming step S6, the support removing step S7, and the second singulation step S8, FIG. 18 and FIG. A light emitting device 500 including the reflector unit 70 shown is obtained. Thereby, the light which leaks from the side surface of the light emitting element 10 by the reflector part 70 is guided to the wavelength conversion plate 30, and the light extraction efficiency can be improved.
(Embodiment 4)

さらに発光装置は、光反射性樹脂４０の上面に形成されたレンズ部を備えることもできる。このような発光素子１０を実施形態４に係る発光装置６００として、図２４に示す。レンズ部８０は、例えば、透光性の樹脂やガラス等を成形することで形成できる。このようなレンズ部８０を設けることで、発光素子１０からの光を効率よく取り出すことができる発光装置を安価に製造できる。本実施形態４に係る発光装置６００では製造工程において、光反射性樹脂３０の支持基板ＳＰが除去された面側に直接モールドガラスレンズなどを接着することができるので、低コストで、効率よくレンズ部８０を形成することが可能となる。
（レンズ形成工程） Further, the light emitting device can include a lens portion formed on the upper surface of the light reflective resin 40. Such a light emitting element 10 is shown in FIG. 24 as a light emitting device 600 according to the fourth embodiment. The lens unit 80 can be formed, for example, by molding a translucent resin or glass. By providing such a lens unit 80, a light emitting device that can efficiently extract light from the light emitting element 10 can be manufactured at low cost. In the light emitting device 600 according to the fourth embodiment, in the manufacturing process, a molded glass lens or the like can be directly bonded to the surface side from which the support substrate SP of the light reflective resin 30 is removed. The portion 80 can be formed.
(Lens formation process)

このようなレンズ部８０を形成するには、例えば上述した発光装置１００の製造工程と同様の手順によって、図８に示すような光反射性樹脂４０を発光素子１０と波長変換板３０の周囲に充填され複数の発光素子１０が連なっており、光反射性樹脂４０から露出したパッド電極２０に外部接続用電極２２が形成された状態まで作成する。次に図２５に示すように、支持体ＳＰを除去して、除去した面側にレンズ部８０を圧縮成形する。具体的には、レンズ部８０を構成する透光性の樹脂を未硬化の状態で塗布し、さらにレンズ部８０の外形に応じた凹部を形成した成形型ＭＤを被せて押圧し成形する。このとき、支持体ＳＰが除かれた側の面において、波長変換板３０と光反射性樹脂４０とが略同一平面上に位置していることが好ましい。このようにすれば、波長変換板３０と光反射性樹脂４０との界面にレンズ部８０を形成しやすくなる。そして、レンズ部８０を構成する樹脂を硬化した後に個片化して、図２４に示す発光装置６００を得る。
（実施形態５） In order to form such a lens unit 80, for example, a light reflective resin 40 as shown in FIG. 8 is placed around the light emitting element 10 and the wavelength conversion plate 30 by the same procedure as the manufacturing process of the light emitting device 100 described above. A plurality of light emitting elements 10 are filled and connected to the pad electrode 20 exposed from the light reflective resin 40, and the external connection electrode 22 is formed. Next, as shown in FIG. 25, the support SP is removed, and the lens portion 80 is compression-molded on the removed surface side. Specifically, a translucent resin constituting the lens unit 80 is applied in an uncured state, and further covered with a molding die MD in which a concave portion corresponding to the outer shape of the lens unit 80 is formed, and then pressed and molded. At this time, it is preferable that the wavelength conversion plate 30 and the light-reflecting resin 40 are located on substantially the same plane on the surface on which the support SP is removed. If it does in this way, it will become easy to form the lens part 80 in the interface of the wavelength conversion board 30 and the light reflection resin 40. FIG. Then, after the resin constituting the lens unit 80 is cured, it is separated into individual pieces to obtain the light emitting device 600 shown in FIG.
(Embodiment 5)

またレンズ部８０の形成方法は、上述の方法に限られず、他の方法も適宜利用できる。例えば実施形態５に係る発光装置では、図２６に示すように、予め複数のレンズ部８０’を配列した成形型ＭＤ’を用意し、このキャビティに未硬化の透光性樹脂やガラス等のレンズ部８０’を構成する部材を充填する。複数のレンズ部８０’は連結状態で硬化される。硬化後、発光素子１０と接合する面を研磨する。   The method for forming the lens unit 80 is not limited to the above-described method, and other methods can be used as appropriate. For example, in the light emitting device according to the fifth embodiment, as shown in FIG. 26, a molding die MD ′ in which a plurality of lens portions 80 ′ are arranged in advance is prepared, and an uncured translucent resin or glass lens is provided in this cavity. The members constituting the portion 80 ′ are filled. The plurality of lens portions 80 'are cured in a connected state. After curing, the surface to be bonded to the light emitting element 10 is polished.

そして図２７に示すように、各レンズ部８０’に対して、予め個片化した発光素子１０を接合させる。この接合には、接着剤等を使用する他、発光素子１０の上面に形成された波長変換板３０とレンズ部８０’とを直接接合させてもよい。そして、上述した手順に従い、光反射性樹脂４０を形成して光反射性樹脂４０からパッド電極２０を露出させた後、外部接続用電極２２を形成し、第二個片化を経て発光装置を得る。   Then, as shown in FIG. 27, the light-emitting element 10 separated in advance is bonded to each lens portion 80 '. For this joining, in addition to using an adhesive or the like, the wavelength conversion plate 30 formed on the upper surface of the light emitting element 10 and the lens unit 80 ′ may be joined directly. Then, according to the procedure described above, after forming the light reflecting resin 40 and exposing the pad electrode 20 from the light reflecting resin 40, the external connection electrode 22 is formed, and the light emitting device is obtained through the second singulation. obtain.

このようにして得られた発光装置は、発光素子１０の一面からのみ光を取り出すため、配向に優れ色むらの少ない高い光質の発光が得られる。また発光素子１０からの発熱を発光素子１０に直接接合された部材から放熱することができるので放熱性を高める効果も得られる。   Since the light-emitting device obtained in this manner extracts light from only one surface of the light-emitting element 10, light emission with high light quality with excellent alignment and little color unevenness can be obtained. In addition, since the heat generated from the light emitting element 10 can be radiated from a member directly joined to the light emitting element 10, an effect of improving heat dissipation can be obtained.

以上のように本発明の実施形態によれば、波長変換板に固定された状態でパッド電極を設けることができるため、作業性や効率に優れることに加え、打ち込む際のエネルギーを効率よく発光素子に与えることができ、強固な接続が維持される。また発光素子を波長変換板と一体化できるので、この点においても機械的強度と信頼性の向上に寄与できる。   As described above, according to the embodiment of the present invention, since the pad electrode can be provided in a state of being fixed to the wavelength conversion plate, in addition to being excellent in workability and efficiency, the energy at the time of driving can be efficiently emitted. A strong connection is maintained. Further, since the light emitting element can be integrated with the wavelength conversion plate, it is possible to contribute to improvement of mechanical strength and reliability in this respect.

本発明の実施形態に係る半導体発光装置の製造法によれば、窒化物半導体を用いた発光ダイオード（ＬＥＤ）や半導体レーザ（ＬＤ）等の半導体素子の製造工程においてパッド電極を形成する際の信頼性を高めることができ、このような半導体素子の製造方法として好適に利用できる。   According to the manufacturing method of the semiconductor light emitting device according to the embodiment of the present invention, the reliability in forming the pad electrode in the manufacturing process of a semiconductor element such as a light emitting diode (LED) or a semiconductor laser (LD) using a nitride semiconductor. And can be suitably used as a method for manufacturing such a semiconductor element.

１００、２００、３００、４００、５００、６００…発光装置
１…第一半導体層
２…第二半導体層
３…活性層
２０…パッド電極；２０Ａ…第一パッド電極；２０Ｂ…第二パッド電極
２２…外部接続用電極
１０…発光素子
３０…波長変換板
４０…光反射性樹脂
５０…遮光膜
６０…サブマウント
７０…リフレクタ部
８０、８０’…レンズ部
１１００…半導体素子
１１３０…波長変換板
１１４０…光反射性樹脂
ＳＰ…支持体
ＭＤ、ＭＤ’…成形型 100, 200, 300, 400, 500, 600 ... light emitting device 1 ... first semiconductor layer 2 ... second semiconductor layer 3 ... active layer 20 ... pad electrode; 20A ... first pad electrode; 20B ... second pad electrode 22 ... External connection electrode 10 ... light emitting element 30 ... wavelength conversion plate 40 ... light reflecting resin 50 ... light shielding film 60 ... submount 70 ... reflector portions 80, 80 '... lens portion 1100 ... semiconductor element 1130 ... wavelength conversion plate 1140 ... light Reflective resin SP ... MD, MD '... Mold

Claims (5)

複数の発光素子を、前記発光素子の発光を異なる波長の光に変換する板状の波長変換板に、直接接合する接合工程と、
前記波長変換板に接合された複数の前記発光素子のそれぞれにおいて、前記波長変換板との接合面の反対側の面に、パッド電極を加圧により設ける電極形成工程と、
前記波長変換板を切断することにより、発光素子ごとに個片化する第一個片化工程と、
を含む発光装置の製造方法。 A bonding step of directly bonding a plurality of light emitting elements to a plate-like wavelength conversion plate that converts light emitted from the light emitting elements into light of different wavelengths;
In each of the plurality of light emitting elements bonded to the wavelength conversion plate, an electrode forming step of providing a pad electrode by pressurization on the surface opposite to the bonding surface with the wavelength conversion plate;
By cutting the wavelength conversion plate, a first singulation step for separating each light emitting element,
A method for manufacturing a light-emitting device including: 請求項１に記載の発光装置の製造方法であって、さらに、
前記個片化した複数の前記波長変換板を有する発光素子を、前記波長変換板が支持体側となるように支持体上に離間して並べる配置工程と、
前記波長変換板を有する発光素子同士の間に光反射性樹脂を充填して形成する樹脂形成工程と、
前記光反射性樹脂を切断することにより、発光素子ごとに個片化する第二個片化工程と、
を含む発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 1, further comprising:
An arrangement step of arranging the light emitting elements having the wavelength conversion plates separated into pieces on the support so that the wavelength conversion plates are on the support side, and
A resin forming step of filling and forming a light-reflecting resin between the light emitting elements having the wavelength conversion plate;
By cutting the light-reflective resin, a second singulation step for separating each light emitting element,
A method for manufacturing a light-emitting device including: 請求項１又は２に記載の発光装置の製造方法であって、
前記直接接合が、表面活性化結合、水酸基結合、原子拡散結合のいずれかである発光装置の製造方法。 A method of manufacturing a light emitting device according to claim 1 or 2,
A method for manufacturing a light emitting device, wherein the direct bonding is any one of a surface activated bond, a hydroxyl group bond, and an atomic diffusion bond. 請求項１〜３のいずれか一に記載の発光装置の製造方法であって、さらに、
前記電極形成工程において、加熱する発光装置の製造方法。 A method of manufacturing a light emitting device according to any one of claims 1 to 3, further comprising:
A method for manufacturing a light emitting device to be heated in the electrode forming step. 請求項１〜４のいずれか一に記載の発光装置の製造方法であって、
前記電極形成工程において、超音波を印加する発光装置の製造方法。 A method for manufacturing a light-emitting device according to claim 1,
A method for manufacturing a light emitting device in which an ultrasonic wave is applied in the electrode forming step.
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