JP5155539B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP5155539B2
JP5155539B2 JP2006254807A JP2006254807A JP5155539B2 JP 5155539 B2 JP5155539 B2 JP 5155539B2 JP 2006254807 A JP2006254807 A JP 2006254807A JP 2006254807 A JP2006254807 A JP 2006254807A JP 5155539 B2 JP5155539 B2 JP 5155539B2
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led chip
light
lens
light emitting
heat transfer
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JP2007116126A (en
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策雄 鎌田
恭志 西岡
洋二 浦野
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、LEDチップと、LEDチップが実装された回路基板などからなる実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲む金属製(例えば、アルミニウム製)の枠体と、枠体の内側に充填されLEDチップおよび当該LEDチップに接続されたボンディングワイヤを封止した透明樹脂(例えば、エポキシ樹脂、シリコーン樹脂など)からなる封止部とを備えた発光装置が提案されている(例えば、特許文献1,2参照)。ここにおいて、上記特許文献1,2に記載された枠体は、実装基板から離れるにつれて開口面積が徐々に大きくなる形状に形成されるとともに内側面が鏡面となっており、LEDチップから放射された光を反射するリフレクタを兼ねている。   Conventionally, an LED chip, a mounting substrate made of a circuit board on which the LED chip is mounted, a metal (for example, aluminum) frame surrounding the LED chip on the mounting surface side of the LED chip on the mounting substrate, There has been proposed a light emitting device including a sealing portion made of a transparent resin (for example, an epoxy resin, a silicone resin, etc.) filled with an LED chip and a bonding wire connected to the LED chip inside the frame. (For example, see Patent Documents 1 and 2). Here, the frames described in Patent Documents 1 and 2 are formed in a shape in which the opening area gradually increases as the distance from the mounting substrate increases, and the inner side surface is a mirror surface, which is emitted from the LED chip. It also serves as a reflector that reflects light.

また、上記特許文献2には、LEDチップとして青色光を放射する青色LEDチップを用い、青色LEDチップを封止する透明樹脂に青色LEDチップから放射された光によって励起されて発光する黄色蛍光体を分散させておくことで白色光の発光スペクトルを得ることができる発光装置が提案されている。
特開2001−85748号公報 特開2001−148514号公報
Further, in Patent Document 2, a blue phosphor that emits blue light is used as an LED chip, and a yellow phosphor that emits light when excited by light emitted from the blue LED chip on a transparent resin that seals the blue LED chip. There has been proposed a light-emitting device capable of obtaining an emission spectrum of white light by dispersing.
JP 2001-85748 A JP 2001-148514 A

ところで、上述の発光装置において封止部の材料としてエポキシ樹脂を用いたものでは、−40℃の低温期間と80℃の高温期間とを交互に繰り返すヒートサイクル試験(温度サイクル試験)を行うと、高温時に実装基板の導体パターンの熱膨張に起因してボンディングワイヤが断線してしまうことがあった。また、封止部の材料としてエポキシ樹脂を用いたものでは、シリコーン樹脂を用いたものに比べて耐候性が低いという不具合があった。   By the way, in the above-described light emitting device using an epoxy resin as the material of the sealing portion, when a heat cycle test (temperature cycle test) in which a low temperature period of −40 ° C. and a high temperature period of 80 ° C. are alternately performed is performed. The bonding wire sometimes breaks due to the thermal expansion of the conductor pattern of the mounting board at a high temperature. Moreover, the thing using an epoxy resin as a material of a sealing part had the malfunction that a weather resistance was low compared with the thing using a silicone resin.

これに対して、上述の発光装置において封止部の材料としてシリコーン樹脂を用いたものでは、封止部がゲル状であって弾性を有しており、ヒートサイクル試験の高温時にボンディングワイヤが断線するのを防止することができるが、封止部の材料であるシリコーン樹脂の線膨張率が枠体の材料であるアルミニウムの線膨張率の10倍以上の値であり、両者の線膨張率差に起因して、ヒートサイクル試験の低温時に封止部中にボイドが発生してしまうという不具合があった。   On the other hand, in the above light emitting device using a silicone resin as the material of the sealing part, the sealing part is gel-like and elastic, and the bonding wire is disconnected at a high temperature in the heat cycle test. However, the linear expansion coefficient of the silicone resin that is the material of the sealing portion is a value that is 10 times or more that of the aluminum that is the material of the frame, and the difference between the linear expansion coefficients of the two Due to the above, there is a problem that voids are generated in the sealing portion at a low temperature in the heat cycle test.

また、上述の発光装置においては、枠体の内側面を鏡面とすることでLEDチップからの光を効率的に封止部の外部へ取り出すようにしているが、枠体の内側面での反射時に光損失が生じてしまうという不具合があった。   Further, in the above light emitting device, the inner surface of the frame body is used as a mirror surface so that light from the LED chip is efficiently extracted to the outside of the sealing portion. There was a problem that light loss sometimes occurred.

本発明は上記事由に鑑みて為されたものであり、その目的は、信頼性を高めることができるとともに光出力の向上を図れる発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object of the present invention is to provide a light emitting device capable of improving reliability and improving light output.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲む円筒状の枠体と、枠体の内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップの各電極に電気的に接続されたボンディングワイヤを封止し且つ弾性を有する封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体および透明材料により形成されてなり実装基板の前記実装面側でレンズの光出射面および枠体の外側面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、実装基板は、熱伝導性材料からなりLEDチップが搭載される伝熱板と、伝熱板側とは反対の表面にLEDチップの各電極それぞれと電気的に接続されるリードパターンが設けられるとともに伝熱板におけるLEDチップの搭載面を露出させる窓孔が設けられ伝熱板に固着された配線基板とからなり、LEDチップは、各電極が一表面側に形成されており、当該LEDチップと伝熱板との線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材を介して伝熱板に他表面が対向する形で搭載され、各電極それぞれがボンディングワイヤを介して互いに異なるリードパターンと電気的に接続され、枠体は、封止部の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料である透明樹脂により形成されたものであり、実装基板に固着されてなることを特徴とする。 The invention of claim 1 includes a LED chip, a mounting substrate on which the LED chip is mounted, a frame body of the LED chip enclose cylindrical in mounting surface of the LED chip in the mounting substrate, a transparent inside the frame member An LED chip formed by filling a resin material and electrically connected to each electrode of the LED chip, and a sealing part having elasticity and a lens arranged to overlap the sealing part And a light emitting surface of the lens on the mounting surface side of the mounting substrate formed of a phosphor and a transparent material that is excited by light emitted from the LED chip and emits light of a color different from the emission color of the LED chip And a dome-shaped color conversion member disposed in a form in which an air layer is formed between the outer surface of the frame body, and the mounting substrate is made of a heat conductive material and is mounted with an LED chip. The board, A lead pattern that is electrically connected to each electrode of the LED chip is provided on the surface opposite to the heat plate side, and a window hole that exposes the mounting surface of the LED chip on the heat transfer plate is provided to be fixed to the heat transfer plate. Each of the electrodes of the LED chip is formed on one surface side, and the stress acting on the LED chip due to the difference in linear expansion coefficient between the LED chip and the heat transfer plate is relieved. submount member through the other surface in heat transfer plate is mounted in a manner opposing, each of the electrodes being electrically connected different lead pattern and with each other via a bonding wire, the frame is, the sealing portion of the transparent resin has been formed by the transparency resin is translucent material having a linear expansion coefficient equivalent to the linear expansion coefficient of the material, characterized by comprising fixed to the mounting substrate.

この発明によれば、枠体の内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップの各電極に電気的に接続されたボンディングワイヤを封止し且つ弾性を有する封止部を備え、枠体が透明樹脂により形成されているので、従来のように枠体が金属材料により形成されている場合に比べて枠体と封止部との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部にボイドが発生するのを抑制することができるから、信頼性を高めることができ、しかも、枠体で光の反射損失が生じるのを抑制することができるから、光出力の向上を図れる。また、色変換部材が実装基板の前記実装面側でレンズの光出射面および枠体の外側面との間に空気層が形成される形で配設されており、色変換部材をレンズに密着させる必要がないので、色変換部材の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できるとともに、色変換部材に外力が作用したときに色変換部材に発生した応力がレンズおよび封止部を通してLEDチップおよび各ボンディングワイヤに伝達されるのを抑制できるという利点や、LEDチップから放射され封止部およびレンズを通して色変換部材に入射し当該色変換部材中の蛍光体の粒子により散乱された光のうちレンズ側へ散乱されてレンズを透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点や、外部雰囲気中の水分が前記LEDチップに到達しにくくなるという利点がある。また、色変換部材とレンズの光出射面および枠体の外側面との間に空気層が形成されているので、色変換部材の蛍光体で発生した熱がLEDチップへ伝熱されるのを抑制することができるという利点がある。   According to this invention, the sealing part which seals the bonding wire formed by filling the inside of the frame body with the transparent resin material and electrically connected to each electrode of the LED chip and having elasticity Since the frame body is formed of a transparent resin, the difference in linear expansion coefficient between the frame body and the sealing portion can be reduced as compared with the case where the frame body is formed of a metal material as in the prior art. It is possible to suppress the generation of voids in the sealing part at low temperatures in the heat cycle test, so that the reliability can be improved and the occurrence of light reflection loss in the frame can be suppressed. As a result, the light output can be improved. In addition, the color conversion member is disposed on the mounting surface side of the mounting substrate so that an air layer is formed between the light emitting surface of the lens and the outer surface of the frame, and the color conversion member is in close contact with the lens. Therefore, it is possible to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the color conversion member, and stress generated in the color conversion member when an external force is applied to the color conversion member through the lens and the sealing portion. Advantage of being able to suppress transmission to the LED chip and each bonding wire, and light emitted from the LED chip and incident on the color conversion member through the sealing portion and the lens and scattered by the phosphor particles in the color conversion member The advantage of being able to reduce the amount of light scattered to the lens side and passing through the lens and improving the light extraction efficiency to the outside as a whole device, Min there is an advantage that is less likely to reach the LED chip. In addition, since an air layer is formed between the color conversion member and the light emitting surface of the lens and the outer surface of the frame, it is possible to suppress heat generated in the phosphor of the color conversion member from being transferred to the LED chip. There is an advantage that you can.

請求項1の発明では、信頼性を高めることができるとともに光出力の向上を図れるという効果がある。   In the invention of claim 1, there is an effect that the reliability can be enhanced and the light output can be improved.

(実施形態1)
以下、本実施形態の発光装置について図1〜図3を参照しながら説明する。
(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10の各電極(図示せず)に電気的に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置されるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体および透明材料により形成されたものあってレンズ60の光出射面60b側にレンズ60を覆い光出射面60bおよび枠体40の外側面との間に空気層80が形成される形で配設されるドーム状の色変換部材70とを備えている。   The light emitting device 1 of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame body 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame body. The LED chip 10 and bonding wires 14 and 14 formed by filling a transparent resin material inside 40 and electrically connected to each electrode (not shown) of the LED chip 10 are sealed and elastic. A sealing unit 50, a lens 60 disposed on the sealing unit 50, a phosphor that is excited by light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10, and An air layer 80 is formed between the light emitting surface 60 b and the outer surface of the frame 40 on the light emitting surface 60 b side of the lens 60 so as to cover the lens 60. And a dome-shaped color conversion member 70 which is arranged in the form.

なお、本実施形態の発光装置1は、例えば照明器具の光源として用いるものであり、例えば、シリカやアルミナなどのフィラーからなる充填材を含有し加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)により形成される絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に接合することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の光源として用いる場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light-emitting device 1 of the present embodiment is used as a light source of a lighting fixture, for example. For example, a resin sheet (for example, fused silica) containing a filler made of a filler such as silica or alumina and having a low viscosity when heated. Is bonded to the instrument body 100 made of metal (for example, a metal having high thermal conductivity such as Al or Cu) through an insulating layer 90 formed of an organic green sheet such as an epoxy resin sheet highly filled with Since the heat resistance from the LED chip 10 to the fixture body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, the input power can be increased, and the light output can be increased. Can be realized. Here, when used as a light source of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so that a desired light output is obtained, and the plurality of light emitting devices 1 are connected in series or in parallel. You can do it.

実装基板20は、熱伝導性材料からなりLEDチップ10が搭載される矩形板状の伝熱板21と、伝熱板21の一面側(図1における上面側)に固着された矩形板状の配線基板22とで構成され、配線基板22の中央部に伝熱板21におけるLEDチップ10の搭載面(上記一面の一部)を露出させる矩形状の窓孔24が形成されており、LEDチップ10が窓孔24の内側に配置されたサブマウント部材30を介して伝熱板21に搭載されている。したがって、LEDチップ10で発生した熱が配線基板22を介さずにサブマウント部材30を介して伝熱板21に伝熱されるようになっている。なお、本実施形態では、伝熱板21の熱伝導性材料として熱伝導率の高い金属であるCuを採用している(つまり、伝熱板21として金属板を採用している)が、熱伝導性材料としてはCuに限らず、例えば、Alのように熱伝導率の高い他の金属やこれら金属と同様に熱伝導率の高い非金属を採用してもよい。   The mounting substrate 20 is made of a heat conductive material and has a rectangular plate-like heat transfer plate 21 on which the LED chip 10 is mounted, and a rectangular plate-like shape fixed to one surface side (the upper surface side in FIG. 1) of the heat transfer plate 21. A rectangular window hole 24 that exposes the mounting surface (a part of the one surface) of the LED chip 10 in the heat transfer plate 21 is formed at the center of the wiring substrate 22. 10 is mounted on the heat transfer plate 21 via a submount member 30 disposed inside the window hole 24. Therefore, the heat generated in the LED chip 10 is transferred to the heat transfer plate 21 via the submount member 30 without passing through the wiring substrate 22. In this embodiment, Cu, which is a metal having high thermal conductivity, is adopted as the heat conductive material of the heat transfer plate 21 (that is, a metal plate is adopted as the heat transfer plate 21). The conductive material is not limited to Cu, and for example, other metals having high thermal conductivity such as Al or nonmetals having high thermal conductivity like these metals may be adopted.

上述の配線基板22は、ガラスエポキシ基板からなる絶縁性基材22aの一表面側に、LEDチップ10の各電極(図示せず)と電気的に接続される一対の給電用のリードパターン23,23が設けられている。各リードパターン23,23は、Cu膜とNi膜とAu膜との積層膜により構成されており、平面視において枠体40よりも内側の部位がインナーリード部23a,23aを構成し、色変換部材70よりも外側の部位がアウターリード部23b,23bを構成している。伝熱板21と配線基板22とは、絶縁性を有するシート状の接着フィルムからなる固着シート25を介して固着されている。なお、絶縁性基材22aの材料は、FR4のようなガラスエポキシ樹脂に限らず、例えば、ポリイミド系樹脂や、フェノール樹脂などでもよい。   The above-mentioned wiring board 22 has a pair of power supply lead patterns 23 electrically connected to each electrode (not shown) of the LED chip 10 on one surface side of an insulating base material 22a made of a glass epoxy board. 23 is provided. Each lead pattern 23, 23 is composed of a laminated film of a Cu film, a Ni film, and an Au film, and the portion inside the frame body 40 in the plan view constitutes the inner lead portions 23a, 23a, and color conversion is performed. Sites outside the member 70 constitute outer lead portions 23b and 23b. The heat transfer plate 21 and the wiring board 22 are fixed via a fixing sheet 25 made of an insulating sheet-like adhesive film. In addition, the material of the insulating base material 22a is not limited to a glass epoxy resin such as FR4, and may be, for example, a polyimide resin or a phenol resin.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、サファイア基板からなる結晶成長用基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長されている。また、LEDチップ10は、一表面側に図示しないカソード側の電極であるカソード電極(n電極)および図示しないアノード側の電極であるアノード電極(p電極)が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が結晶成長用基板11よりも伝熱板21から離れた側となる形で伝熱板21に搭載されている(つまり、LEDチップ10は、実装基板20に対してフェースアップ実装されている)。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is formed of a GaN-based compound semiconductor material on the main surface side of a crystal growth substrate 11 made of a sapphire substrate and has, for example, a stacked structure having a double hetero structure. The light emitting portion 12 composed of a portion is grown by an epitaxial growth method (for example, MOVPE method). Further, the LED chip 10 has a cathode electrode (n electrode) which is a cathode side electrode (not shown) and an anode electrode (p electrode) which is an anode side electrode (not shown) formed on one surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting portion 12 of the LED chip 10 is mounted on the heat transfer plate 21 in such a form that it is on the side farther from the heat transfer plate 21 than the crystal growth substrate 11 (that is, the LED chip 10 is And mounted face-up on the mounting substrate 20).

また、LEDチップ10は、上述の伝熱板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と伝熱板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を伝熱板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極および上記アノード電極それぞれが金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14,14を介して互いに異なるリードパターン23,23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペースト、エポキシ樹脂などを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田や銀ペーストを用いて接合することが熱伝導性および環境保護の観点から好ましい。また、サブマウント部材30は、LEDチップ10の接合部位の周囲に、LEDチップ10から放射された光を反射する反射膜(図示せず)が形成されている。ここで、上記反射膜は、例えば、Ni膜とAg膜との積層膜により構成すればよい。   The LED chip 10 is formed on the above-described heat transfer plate 21 in a rectangular plate shape larger than the chip size of the LED chip 10, and is caused by a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21. It is mounted via a submount member 30 that relieves stress acting on the LED chip 10. The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 in the heat transfer plate 21. Yes. In the present embodiment, AlN having a relatively high thermal conductivity and insulation is employed as the material of the submount member 30. In the LED chip 10, each of the cathode electrode and the anode electrode is a thin metal wire (for example, The lead patterns 23 and 23 are electrically connected to each other through bonding wires 14 and 14 made of a gold fine wire, an aluminum fine wire, or the like. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, silver paste, epoxy resin, or the like, but lead-free solder such as AuSn, SnAgCu, or silver Bonding using a paste is preferable from the viewpoint of thermal conductivity and environmental protection. In addition, the submount member 30 is formed with a reflective film (not shown) that reflects light emitted from the LED chip 10 around the bonding portion of the LED chip 10. Here, the reflective film may be formed of a laminated film of a Ni film and an Ag film, for example.

サブマウント部材30の材料はAlNに限らず、線膨張率が結晶成長用基板11の材料であるサファイアに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and may be any material that has a linear expansion coefficient that is relatively close to that of sapphire that is the material of the crystal growth substrate 11 and a relatively high thermal conductivity. For example, composite SiC, Si Etc. may be adopted.

また、発光装置1は、LEDチップ10およびサブマウント部材30それぞれの平面視における外周形状が正方形状であり、平面視においてLEDチップ10の外周線がサブマント部材30の外周線よりも内側に位置し且つ両外周線が並行しないようにLEDチップ10がサブマウント部材30の中央部に接合されており、LEDチップ10の対角線とサブマウント部材30の対角線とが非平行となっている。より具体的には、LEDチップ10の対角線とサブマウント部材30の対角線とのなす角度が略45度となるようにLEDチップ10がサブマント部材30の中央部に接合されている。   In the light emitting device 1, the outer peripheral shape of each of the LED chip 10 and the submount member 30 in a plan view is a square shape, and the outer peripheral line of the LED chip 10 is located on the inner side of the outer peripheral line of the submant member 30 in the plan view. In addition, the LED chip 10 is joined to the central portion of the submount member 30 so that the outer peripheral lines are not parallel to each other, and the diagonal line of the LED chip 10 and the diagonal line of the submount member 30 are not parallel. More specifically, the LED chip 10 is joined to the central portion of the sub-mant member 30 so that the angle formed by the diagonal line of the LED chip 10 and the diagonal line of the sub-mount member 30 is approximately 45 degrees.

したがって、LEDチップ10とサブマウント部材30とが両者の外周線が並行するような位置関係にある場合に比べて、サブマウント部材30の平面サイズを小さくすることなく、LEDチップ10の1つの対角線に沿った方向へ延出される各ボンディングワイヤ14,14の両端間の直線距離(つまり、LEDチップ10一表面の各電極と当該各電極それぞれにボンディングワイヤ14,14を介して電気的に接続されるリードパターン23,23のインナーリード部23a,23aとの距離)を短くすることができ、ボンディングワイヤ14,14に起因した光取出し効率の低下を抑制することができるとともに、枠体40および発光装置1全体の小型化を図ることができる。要するに、サブマウント部材30による熱伝導機能を低下させることなく、ボンディングワイヤ14,14に起因した光取出し効率の低下を抑制することができるとともに、枠体40や発光装置1全体の小型化を図ることができる。   Therefore, compared with the case where the LED chip 10 and the submount member 30 are in a positional relationship such that the outer peripheral lines of the LED chip 10 and the submount member 30 are parallel to each other, one diagonal line of the LED chip 10 is obtained without reducing the planar size of the submount member 30. A linear distance between both ends of each bonding wire 14, 14 extending in the direction along the line (that is, each electrode on one surface of the LED chip 10 is electrically connected to each electrode via the bonding wire 14, 14. The distance between the lead patterns 23 and 23 and the inner lead portions 23a and 23a) can be shortened, and a decrease in light extraction efficiency due to the bonding wires 14 and 14 can be suppressed. The overall size of the device 1 can be reduced. In short, it is possible to suppress a decrease in light extraction efficiency due to the bonding wires 14 and 14 without reducing the heat conduction function of the submount member 30 and to reduce the size of the frame body 40 and the light emitting device 1 as a whole. be able to.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   Although the silicone resin is used as the transparent resin material of the sealing portion 50 described above, not only the silicone resin but also an acrylic resin may be used.

これに対して、枠体40は、円筒状の形状であって、透明樹脂により形成されている(本実施形態では、透明樹脂の成形品により構成されている)が、枠体40を形成する透明樹脂としては、シリコーン樹脂を採用している。要するに、本実施形態では、封止部50の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料により枠体40を形成してある。ここに、本実施形態では、枠体40を実装基板20に固着した後で枠体40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成してある。なお、上記透明樹脂材料としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40をアクリル樹脂により形成する(例えば、アクリル樹脂の成形品により構成する)ことが望ましい。   On the other hand, the frame body 40 has a cylindrical shape and is formed of a transparent resin (in the present embodiment, formed of a transparent resin molded product), but forms the frame body 40. A silicone resin is used as the transparent resin. In short, in the present embodiment, the frame body 40 is formed of a translucent material having a linear expansion coefficient equivalent to that of the transparent resin material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the mounting substrate 20, the sealing resin 50 is formed by filling (potting) the transparent resin material inside the frame body 40 and thermosetting the same. is there. In the case where an acrylic resin is used instead of the silicone resin as the transparent resin material, it is desirable that the frame body 40 be formed of an acrylic resin (for example, formed of an acrylic resin molded product).

レンズ60は、封止部50側の光入射面60aおよび光出射面60bそれぞれが凸曲面状に形成された両凸レンズにより構成されている。ここにおいて、レンズ60は、シリコーンにより形成されており(本実施形態では、シリコーンの成形品により構成してあり)、封止部50と屈折率が同じ値となっているが、レンズ60は、シリコーンに限らず、例えば、アクリル樹脂により形成してもよい。   The lens 60 is composed of a biconvex lens in which each of the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side is formed in a convex curved surface shape. Here, the lens 60 is formed of silicone (in the present embodiment, it is formed of a molded product of silicone), and the refractive index is the same as that of the sealing portion 50. Not only silicone but also acrylic resin may be used, for example.

ところで、レンズ60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。ここで、レンズ60は、当該レンズ60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。なお、LEDチップ10の側面から放射された光は封止部50および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体を励起したり蛍光体には衝突せずに色変換部材70を透過したりする。   By the way, the lens 60 has a light emitting surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light emitting surface 60b and the air layer 80 described above. Here, the lens 60 is disposed so that the optical axis of the lens 60 is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50 and the air layer 80 to reach the color conversion member 70 and does not excite the phosphor of the color conversion member 70 or collide with the phosphor. Or the color conversion member 70 is transmitted.

色変換部材70は、シリコーンのような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーンに限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article made of a mixture of a transparent material such as silicone and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. It is configured. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. The transparent material used as the material of the color conversion member 70 is not limited to silicone, but, for example, acrylic resin, epoxy resin, glass, organic / inorganic hybrid in which organic components and inorganic components are mixed and bonded at the nm level or molecular level. Materials etc. may be adopted. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the mounting substrate 20 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like) on the periphery of the opening.

以上説明した本実施形態の発光装置1では、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に電気的に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50を備え、枠体40が透明樹脂により形成されているので、従来のように枠体が金属材料により形成されている場合に比べて枠体40と封止部50との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部50にボイドが発生するのを抑制することができるから、従来に比べて信頼性を高めることができ、しかも、枠体40で光の反射損失が生じるのを抑制することができるから、光出力の向上を図れる。   In the light emitting device 1 of the present embodiment described above, the LED chip 10 and the bonding wires 14 and 14 that are formed by filling the inside of the frame body 40 with a transparent resin material and electrically connected to the LED chip 10 are sealed. Since the frame body 40 is formed of a transparent resin and has a sealing portion 50 that stops and has elasticity, the frame body 40 and the frame 40 are sealed as compared to the conventional case where the frame body is formed of a metal material. The linear expansion coefficient difference with the part 50 can be reduced, and voids can be prevented from being generated in the sealing part 50 at the low temperature of the heat cycle test. And since it can suppress that the reflection loss of light arises in the frame 40, the improvement of a light output can be aimed at.

また、本実施形態の発光装置1では、色変換部材70はレンズ60の光出射面60bおよび枠体40の外側面との間に空気層80が形成される形で配設すればよく、色変換部材70をレンズ60および枠体40に密着させる必要がないので、色変換部材70の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる。また、本実施形態の発光装置1では、組立時に色変換部材70の組付けが最終工程となるので、LEDチップ10の発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材70を用いることで色ばらつきを低減することもできる。   Further, in the light emitting device 1 of the present embodiment, the color conversion member 70 may be disposed in such a manner that an air layer 80 is formed between the light emitting surface 60b of the lens 60 and the outer surface of the frame body 40. Since the conversion member 70 does not need to be in close contact with the lens 60 and the frame body 40, it is possible to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the color conversion member 70. Further, in the light emitting device 1 of the present embodiment, since the assembly of the color conversion member 70 is the final process at the time of assembly, the color conversion member 70 in which the blending of the phosphor with respect to the transparent material is adjusted according to the emission wavelength of the LED chip 10. By using, color variations can be reduced.

また、本実施形態の発光装置1では、上述のように色変換部材70とレンズ60との間に空気層80が形成されているので、色変換部材70に外力が作用したときに色変換部材70が変形してレンズ60に当接する可能性が低くなって上記外力により色変換部材70に発生した応力がレンズ60および封止部50を通してLEDチップ10や各ボンディングワイヤ14,14に伝達されるのを抑制でき、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14,14の断線が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点や、色変換部材70の蛍光体で発生した熱がLEDチップへ伝熱されるのを抑制することができるという利点がある。   Further, in the light emitting device 1 of the present embodiment, since the air layer 80 is formed between the color conversion member 70 and the lens 60 as described above, the color conversion member when an external force acts on the color conversion member 70. The possibility that the lens 70 is deformed and abutted against the lens 60 is reduced, and the stress generated in the color conversion member 70 due to the external force is transmitted to the LED chip 10 and the bonding wires 14 and 14 through the lens 60 and the sealing portion 50. Therefore, there is an advantage that reliability is improved because fluctuations in the light emission characteristics of the LED chip 10 due to the external force and disconnection of the bonding wires 14 and 14 are less likely to occur. Further, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the moisture in the external atmosphere hardly reaches the LED chip 10, and the phosphor of the color conversion member 70 There is an advantage that it is possible to suppress the heat generated by the heat transfer to the LED chip.

また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、LEDチップ10から放射され封止部50およびレンズ60を通して色変換部材70に入射し当該色変換部材70中の黄色蛍光体の粒子により散乱された光のうちレンズ60側へ散乱されてレンズ60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the color conversion member 70 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the lens 60. Among the light scattered by the yellow phosphor particles in 70, there is an advantage that the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, and the light extraction efficiency to the outside as the entire apparatus can be improved. is there.

ここで、図4(a),(b)に示すように、色変換部材70の光軸とLEDチップ10の光軸とが一致しており、色変換部材70における光軸方向の中央の位置PでLEDチップ10からの青色光が全方位に散乱されたとし、色変換部材70と空気層80との界面での全反射角をφa、色変換部材70と当該色変換部材70の外側の媒質である空気との界面での全反射角をφb、位置Pで散乱された光に関して色変換部材70の内面70a側のエスケープコーンECaの広がり角を2θa、位置Pで散乱された光に関して色変換部材70の外面70b側のエスケープコーンECbの広がり角を2θbとすれば、図4(a)に示すように全反射角φa,φbが40°のときには2θa=60°、2θb=98°となり、図4(b)に示すように全反射角φa,φbが50°のときには2θa=76°、2θb=134°となる。   Here, as shown in FIGS. 4A and 4B, the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 coincide with each other, and the central position of the color conversion member 70 in the optical axis direction. It is assumed that the blue light from the LED chip 10 is scattered in all directions by P, the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is φa, and the color conversion member 70 and the outside of the color conversion member 70 are outside. The total reflection angle at the interface with air, which is the medium, is φb, the light scattered at the position P is 2θa, the spread angle of the escape cone ECa on the inner surface 70a side of the color conversion member 70, and the color is scattered with respect to the light scattered at the position P If the spread angle of the escape cone ECb on the outer surface 70b side of the conversion member 70 is 2θb, as shown in FIG. 4A, when the total reflection angles φa and φb are 40 °, 2θa = 60 ° and 2θb = 98 °. , The total reflection angle as shown in FIG. When φa and φb are 50 °, 2θa = 76 ° and 2θb = 134 °.

ここにおいて、色変換部材70に用いている透明材料の屈折率をn、位置Pで散乱され内面70a側のエスケープコーンECaを通して放出される青色光の最大放出効率をηとすれば、η=(1/4n2)×100〔%〕で表されるので、上述のように透明材料としてシリコーン樹脂を用いている場合には、n=1.4として、η≒13%となる。したがって、色変換部材70とレンズ60との間に空気層80が形成されていない場合には、位置Pで散乱された青色光の50%がレンズ60に戻ってしまうのに対して、空気層80を形成したことにより、位置Pで散乱された青色光の13%しかレンズ60に戻らなくなるので、青色光による封止部50の劣化を抑制できる。なお、エスケープコーンECaを通して放出される青色光を少なくするには、色変換部材70の厚みを大きくすることが望ましい。 Here, if the refractive index of the transparent material used for the color conversion member 70 is n and the maximum emission efficiency of blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a is η, η = ( ¼n 2 ) × 100 [%], so that when silicone resin is used as the transparent material as described above, η≈13% when n = 1.4. Therefore, when the air layer 80 is not formed between the color conversion member 70 and the lens 60, 50% of the blue light scattered at the position P returns to the lens 60, whereas the air layer Since 80 is formed, only 13% of the blue light scattered at the position P returns to the lens 60, so that deterioration of the sealing portion 50 due to the blue light can be suppressed. In order to reduce the blue light emitted through the escape cone ECa, it is desirable to increase the thickness of the color conversion member 70.

また、本実施形態における発光装置1は、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22の表面よりも伝熱板21から離れるように設定してあり、LEDチップ10から側方に放射された光が配線基板22の窓孔24の内周面を通して配線基板22に吸収されるのを防止することができるとともに、LEDチップ10から側方に放射された光が色変換部材70と実装基板20との接合部を通して出射されるのを防止することができる。また、上述のように、サブマウント部材30におけるLEDチップ10の接合部位の周囲に、LEDチップ10から放射された光を反射する上記反射膜を形成してあるので、LEDチップ10から側方に放射された光がサブマウント部材30に吸収されるのを防止することができ、外部への光取出し効率を高めることが可能となる。   Further, in the light emitting device 1 according to the present embodiment, the thickness dimension of the submount member 30 is set so that the surface of the submount member 30 is further away from the heat transfer plate 21 than the surface of the wiring substrate 22. It is possible to prevent the light radiated laterally from 10 from being absorbed by the wiring substrate 22 through the inner peripheral surface of the window hole 24 of the wiring substrate 22 and the light radiated laterally from the LED chip 10. The light can be prevented from being emitted through the joint portion between the color conversion member 70 and the mounting substrate 20. In addition, as described above, the reflection film that reflects the light emitted from the LED chip 10 is formed around the bonding portion of the LED chip 10 in the submount member 30, so that the LED chip 10 is laterally formed. It is possible to prevent the emitted light from being absorbed by the submount member 30 and to increase the light extraction efficiency to the outside.

(実施形態2)
以下、本実施形態の発光装置について図5〜図7に基づいて説明する。
(Embodiment 2)
Hereinafter, the light emitting device of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1の基本構成は実施形態1と略同じであって、レンズ60と枠体40とが同一の透明樹脂(例えば、シリコーンなど)により一体成形されている点などが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, except that the lens 60 and the frame body 40 are integrally formed of the same transparent resin (for example, silicone). . In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

また、本実施形態における配線基板22は、絶縁性基材22aにおける伝熱板21側とは反対の表面側に、リードパターン23,23および絶縁性基材22aにおいてリードパターン23,23が形成されていない部位を覆う白色系の樹脂からなるレジスト層26(図5および図7参照)が積層されている。したがって、LEDチップ10の側面から放射されレジスト層26の表面に入射した光がレジスト層26の表面で反射されるので、LEDチップ10から放射された光が配線基板22における伝熱板21側とは反対の表面を通して吸収されるのを防止することができ、外部への光取り出し効率の向上による光出力の向上を図れる。   Further, in the wiring board 22 in the present embodiment, the lead patterns 23 and 23 and the lead patterns 23 and 23 are formed in the insulating base material 22a on the surface side opposite to the heat transfer plate 21 side in the insulating base material 22a. A resist layer 26 (see FIG. 5 and FIG. 7) made of a white resin covering a portion that is not present is laminated. Therefore, the light emitted from the side surface of the LED chip 10 and incident on the surface of the resist layer 26 is reflected by the surface of the resist layer 26, so that the light emitted from the LED chip 10 is connected to the heat transfer plate 21 side in the wiring substrate 22. Can be prevented from being absorbed through the opposite surface, and the light output can be improved by improving the light extraction efficiency to the outside.

ここにおいて、レジスト層26は、配線基板22の窓孔24の近傍において各リードパターン23,23のインナーリード部23a,23aを露出させる円形状の開口窓26aが形成され、配線基板22の周部において各導体パターン23,23のアウターリード部23b,23bそれぞれを露出させる円形状の開口窓26b,26bが形成されている。   Here, the resist layer 26 is formed with circular opening windows 26 a that expose the inner lead portions 23 a and 23 a of the lead patterns 23 and 23 in the vicinity of the window holes 24 of the wiring substrate 22. Are formed with circular opening windows 26b and 26b for exposing the outer lead portions 23b and 23b of the conductor patterns 23 and 23, respectively.

また、本実施形態におけるレンズ60は、封止部50側の光入射面60aが平面状に形成され光出射面60bが凸曲面状に形成された平凸レンズ状に形成されている。   Further, the lens 60 in the present embodiment is formed in a plano-convex lens shape in which the light incident surface 60a on the sealing portion 50 side is formed in a flat shape and the light emitting surface 60b is formed in a convex curved surface shape.

ここにおいて、レンズ60と枠体40とは上述のように、同一の透明樹脂(例えば、シリコーンなど)により一体成形されており(言い換えれば、レンズ60と枠体40とが連続一体に形成されており)、封止部50と屈折率および線膨張率が同じ値となっている。なお、レンズ60と枠体40とは封止部50の透明樹脂材料の屈折率および弾性率を下回らない透明樹脂により形成すればよく、例えば、封止樹脂がアクリル樹脂である場合には、レンズ60と枠体40とをアクリル樹脂により一体成形してもよい。また、レンズ60および枠体40の材料として採用する透明樹脂は、封止部50の透明樹脂材料の線膨張率と同等の線膨張率を有していればよい。   Here, as described above, the lens 60 and the frame body 40 are integrally formed of the same transparent resin (for example, silicone) (in other words, the lens 60 and the frame body 40 are continuously formed integrally. In other words, the sealing portion 50 has the same refractive index and linear expansion coefficient. The lens 60 and the frame body 40 may be formed of a transparent resin that does not fall below the refractive index and elastic modulus of the transparent resin material of the sealing portion 50. For example, when the sealing resin is an acrylic resin, the lens 60 and the frame 40 may be integrally formed of acrylic resin. The transparent resin employed as the material of the lens 60 and the frame body 40 only needs to have a linear expansion coefficient equivalent to that of the transparent resin material of the sealing portion 50.

また、本実施形態の発光装置は、LEDチップ10が、実装基板20の最表面(レジスト層26の表面)を含む平面から当該平面の法線方向に離間した位置に配置されており、レンズ60と枠体40とで構成されるレンズブロックにおいてレンズ60と枠体40とで囲まれた空間がLEDチップ10を収納する収納凹部を構成している。   In the light emitting device of the present embodiment, the LED chip 10 is disposed at a position separated from the plane including the outermost surface (the surface of the resist layer 26) of the mounting substrate 20 in the normal direction of the plane. The space surrounded by the lens 60 and the frame body 40 in the lens block constituted by the frame body 40 constitutes a housing recess for housing the LED chip 10.

本実施形態の発光装置の製造方法としては、図9に示すように、LEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、レンズ60と枠体40とで囲まれる空間に上述の封止部50となる液状の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50cを注入してから、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して透明樹脂材料50cを硬化させることにより封止部50を形成するような製造方法が考えられる。しかしながら、このような製造方法では、製造過程において封止部50にボイドが発生する恐れがある。   As a method for manufacturing the light emitting device of this embodiment, as shown in FIG. 9, after the LED chip 10 and the bonding wires 14 and 14 are electrically connected, the space surrounded by the lens 60 and the frame body 40 is described above. A mounting substrate in which the frame 40 is interposed between the lens 60 and the mounting substrate 20 after injecting a liquid transparent resin material (for example, a sealing resin made of silicone resin) 50c to be the sealing portion 50 A manufacturing method is conceivable in which the sealing portion 50 is formed by placing the transparent resin material 50c opposite to the substrate 20 and curing the transparent resin material 50c. However, in such a manufacturing method, a void may occur in the sealing portion 50 during the manufacturing process.

そこで、本実施形態の発光装置1の製造にあたっては、図8に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる液状の第1の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50aにより覆ってから、レンズ60と枠体40とで囲まれる空間に第1の透明樹脂材料50aと同一材料からなり封止部50の他の部分となる液状の第2の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50bを注入し、その後、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して各透明樹脂材料50a,50bを硬化させることにより封止部50を形成するようにしている。このような製造方法によれば、製造過程で封止部50にボイドが発生しにくくなり、信頼性が高く且つ光出力が大きな発光装置1を提供することができる。ここで、第2の透明樹脂材料50bを注入する前に、第1の透明樹脂材料50aを硬化させておけば、第1の透明樹脂材料50aの粘度が低下し上記収納凹部内に閉じ込められたボイドが抜けやすくなるという利点がある。なお、本実施形態では、実装基板20のレジスト層26の中央部に形成された円形状の開口窓26aの内径を色変換部材70の最大外径よりもやや大きな寸法に設定してあり、第1の透明樹脂材料50aをポッティングした際に開口窓26aの内周面近傍まで流れ込んだ第1の透明樹脂材料50aを、色変換部材70と実装基板20とを接合する接着剤として利用している。   Therefore, in manufacturing the light emitting device 1 of the present embodiment, as shown in FIG. 8, after the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected, The LED chip 10 and the bonding wires 14 and 14 are covered with a liquid first transparent resin material (for example, a sealing resin made of silicone resin) 50a that becomes a part of the sealing portion 50, and then the lens 60 and the frame body 40 are covered. A liquid second transparent resin material (for example, a sealing resin made of silicone resin) 50b made of the same material as the first transparent resin material 50a and serving as another part of the sealing portion 50 is injected into the space surrounded by Thereafter, the transparent resin materials 50a and 50b are cured by disposing the lens 60 opposite to the mounting substrate 20 with the frame body 40 interposed between the lens 60 and the mounting substrate 20. And so as to form the sealing portion 50. According to such a manufacturing method, it is difficult to generate a void in the sealing portion 50 during the manufacturing process, and it is possible to provide the light emitting device 1 with high reliability and high light output. Here, if the first transparent resin material 50a is cured before injecting the second transparent resin material 50b, the viscosity of the first transparent resin material 50a is lowered and trapped in the storage recess. There is an advantage that voids are easily removed. In the present embodiment, the inner diameter of the circular opening window 26a formed in the central portion of the resist layer 26 of the mounting substrate 20 is set to be slightly larger than the maximum outer diameter of the color conversion member 70. When the first transparent resin material 50a is potted, the first transparent resin material 50a that has flowed to the vicinity of the inner peripheral surface of the opening window 26a is used as an adhesive that joins the color conversion member 70 and the mounting substrate 20. .

以上説明した本実施形態の発光装置1では、レンズ60と枠体40とが同一の透明樹脂により一体成形されているので、レンズ60と枠体40とが別部材である場合に比べて部品点数を少なくできるとともに、LEDチップ10とレンズ60との光軸のずれに起因した光出力の低下を防止することができる。   In the light emitting device 1 of the present embodiment described above, since the lens 60 and the frame body 40 are integrally formed of the same transparent resin, the number of parts is larger than when the lens 60 and the frame body 40 are separate members. And a decrease in light output due to the deviation of the optical axis between the LED chip 10 and the lens 60 can be prevented.

(実施形態3)
以下、本実施形態の発光装置1について図10に基づいて説明する。
(Embodiment 3)
Hereinafter, the light-emitting device 1 of this embodiment is demonstrated based on FIG.

本実施形態の発光装置1の基本構成は実施形態2と略同じであって、レジスト層26の中央部の開口窓26aの内径を色変換部材70の最大内径よりもやや小さく設定してあり、色変換部材70における実装基板20側の端縁とレジスト層26における開口窓26aの周部とを全周に亘って接着剤からなる接合部75により接合している点が相違する。なお、実施形態2と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the second embodiment, and the inner diameter of the opening window 26a at the center of the resist layer 26 is set slightly smaller than the maximum inner diameter of the color conversion member 70. The difference is that the edge of the color conversion member 70 on the mounting substrate 20 side and the peripheral portion of the opening window 26a in the resist layer 26 are joined together by a joint portion 75 made of an adhesive over the entire circumference. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

したがって、本実施形態の発光装置1の製造にあたっては、実施形態2と同様、図11に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる液状の第1の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50aにより覆ってから、レンズ60と枠体40とで囲まれる空間に第1の透明樹脂材料50aと同一材料からなり封止部50の他の部分となる液状の第2の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50bを注入し、その後、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して各透明樹脂材料50a,50bを硬化させることにより封止部50を形成するようにしている。ここにおいて、本実施形態の発光装置1の製造にあたっては、レジスト層26により、色変換部材70の接合部位まで第1の透明樹脂材料50aが流出するのを防止しており、色変換部材70の実装基板20側の端縁と実装基板20とを接着剤により接合しているので、色変換部材70と実装基板20との間に介在する接合部75の厚みの制御が容易になるとともに、色変換部材70と実装基板20との接合の信頼性が向上する。なお、接合部75の接着剤としては、色変換部材70と同じ材料を用いるのが望ましい。   Therefore, in manufacturing the light emitting device 1 of the present embodiment, as in the second embodiment, the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected as shown in FIG. After the connection, the LED chip 10 and the bonding wires 14 and 14 are covered with a liquid first transparent resin material (for example, a sealing resin made of silicone resin) 50a which becomes a part of the sealing portion 50, In a space surrounded by the lens 60 and the frame body 40, a liquid second transparent resin material (for example, a seal made of silicone resin) made of the same material as the first transparent resin material 50a and forming the other part of the sealing portion 50 is used. (Stopping resin) 50b is injected, and then the lens 60 is disposed opposite to the mounting substrate 20 with the frame body 40 interposed between them and the transparent resin materials 50a, 5 And so as to form a sealing portion 50 formed by curing the b. Here, in manufacturing the light emitting device 1 of the present embodiment, the resist layer 26 prevents the first transparent resin material 50a from flowing out to the joint portion of the color conversion member 70. Since the edge on the mounting substrate 20 side and the mounting substrate 20 are bonded with an adhesive, the thickness of the bonding portion 75 interposed between the color conversion member 70 and the mounting substrate 20 can be easily controlled, and the color The reliability of joining between the conversion member 70 and the mounting substrate 20 is improved. In addition, it is desirable to use the same material as the color conversion member 70 as the adhesive of the joint portion 75.

ところで、上述の各実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、結晶成長用基板11としてサファイア基板を採用しているが、サファイア基板に限らず、SiC基板、GaN基板などを用いてもよい。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、結晶成長用基板11もサファイア基板に限らず、発光部12の材料に応じて、例えば、SiC基板、GaN基板、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in each of the above-described embodiments, a blue LED chip whose emission color is blue is adopted as the LED chip 10 and a sapphire substrate is adopted as the crystal growth substrate 11. A substrate, a GaN substrate, or the like may be used. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. The crystal growth substrate 11 is not limited to the sapphire substrate, and may be appropriately selected from, for example, a SiC substrate, a GaN substrate, a GaAs substrate, and a GsP substrate according to the material of the light emitting unit 12.

実施形態1の発光装置の概略断面図である。1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. 同上の発光装置の一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view in which the light emitting device same as the above was partially broken. 同上の発光装置の要部概略平面図である。It is a principal part schematic plan view of a light-emitting device same as the above. 同上の発光装置の要部説明図である。It is principal part explanatory drawing of a light-emitting device same as the above. 実施形態2の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 同上の発光装置の一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view in which the light emitting device same as the above was partially broken. 同上の発光装置における配線基板の概略平面図である。It is a schematic plan view of the wiring board in the above light emitting device. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 実施形態3の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 3. FIG. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 伝熱板
22 配線基板
22a 絶縁性基材
23 リードパターン
30 サブマウント部材
40 枠体
50 封止部
60 レンズ
70 色変換部材
80 空気層
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 14 Bonding wire 20 Mounting board 21 Heat-transfer board 22 Wiring board 22a Insulating base material 23 Lead pattern 30 Submount member 40 Frame body 50 Sealing part 60 Lens 70 Color conversion member 80 Air layer

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲む円筒状の枠体と、枠体の内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップの各電極に電気的に接続されたボンディングワイヤを封止し且つ弾性を有する封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体および透明材料により形成されてなり実装基板の前記実装面側でレンズの光出射面および枠体の外側面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、実装基板は、熱伝導性材料からなりLEDチップが搭載される伝熱板と、伝熱板側とは反対の表面にLEDチップの各電極それぞれと電気的に接続されるリードパターンが設けられるとともに伝熱板におけるLEDチップの搭載面を露出させる窓孔が設けられ伝熱板に固着された配線基板とからなり、LEDチップは、各電極が一表面側に形成されており、当該LEDチップと伝熱板との線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材を介して伝熱板に他表面が対向する形で搭載され、各電極それぞれがボンディングワイヤを介して互いに異なるリードパターンと電気的に接続され、枠体は、封止部の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料である透明樹脂により形成されたものであり、実装基板に固着されてなることを特徴とする発光装置。 An LED chip, a mounting substrate on which the LED chip is mounted, formed by filling a frame body of the LED chip enclose cylindrical in mounting surface of the LED chip in the mounting substrate, a transparent resin material on the inside of the frame The LED chip and the bonding wire electrically connected to each electrode of the LED chip are sealed and elastically sealed, a lens disposed on the sealed part, and emitted from the LED chip. The light emitting surface of the lens and the outer surface of the frame on the mounting surface side of the mounting substrate are formed of a phosphor and a transparent material that is excited by the light and emits light of a color different from the emission color of the LED chip. A dome-shaped color conversion member disposed in such a manner that an air layer is formed between the heat transfer plate and the heat transfer plate on which the LED chip is mounted made of a heat conductive material and the heat transfer plate side Opposite A lead pattern that is electrically connected to each electrode of the LED chip is provided on the surface, and a window hole that exposes the LED chip mounting surface on the heat transfer plate is provided, and the wiring board is fixed to the heat transfer plate. In the LED chip, each electrode is formed on one surface side, and is transmitted through a submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the heat transfer plate. It is mounted on the heat plate with the other surface facing each other, and each electrode is electrically connected to a different lead pattern via a bonding wire, and the frame is equivalent to the linear expansion coefficient of the transparent resin material of the sealing part of a translucent material having a linear expansion coefficient has been formed by the transparency resin, the light emitting device characterized by comprising fixed to the mounting substrate.
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