JP4282344B2 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
JP4282344B2
JP4282344B2 JP2003052775A JP2003052775A JP4282344B2 JP 4282344 B2 JP4282344 B2 JP 4282344B2 JP 2003052775 A JP2003052775 A JP 2003052775A JP 2003052775 A JP2003052775 A JP 2003052775A JP 4282344 B2 JP4282344 B2 JP 4282344B2
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JP
Japan
Prior art keywords
light
emitting diode
refractive index
resin
translucent resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003052775A
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Japanese (ja)
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JP2004265985A (en
Inventor
悟 菊池
孝一 深澤
光識 石坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2003052775A priority Critical patent/JP4282344B2/en
Publication of JP2004265985A publication Critical patent/JP2004265985A/en
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Publication of JP4282344B2 publication Critical patent/JP4282344B2/en
Anticipated expiration legal-status Critical
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Description

【0001】
【発明の属する技術分野】
本発明は、パーソナルコンピューター、プリンター、PDA、ファクシミリ、ページャー、携帯電話等の民生機器に使用される発光ダイオードに関する。
【0002】
【従来の技術】
近年、光通信機能を搭載したノート型パソコン、PDA、携帯電話等の携帯機器などの各種電子機器の表示装置として、薄型で見やすいバックライト機構を備えた液晶表示装置が広く用いられている。従来のこのようなLCDを備えた電子機器として、携帯電話のLCDバックライト、携帯電話の各種キー照明用として発光ダイオードが広く使用されている。(例えば、未公開特許文献1)
【0003】
【未公開特許文献1】
特許願2002−024811号(第1頁、図7)
【0004】
上記した未公開特許文献1は、本出願人が先に出願したもので、図5は、その従来技術として開示されているもので、従来、一般的に使用されている携帯電話の正面図である。図5において、10はケース本体で、その上側には略長方形をしたLCD11が配設されている。12はLCDバックライト用のLEDパッケージで、1〜4個程度(図5では3個)使用している。また、ケース本体10の下側には、複数個の操作用のキースイッチ13が配設されていて、これらのキースイッチ13のバックライト用として、4〜20個程度(図5では16個)の多数のLEDパッケージ12が使用されている。
【0005】
現状使用されているLEDパッケージ(図示せず)は、例えば、ガラスエポキシ樹脂などよりなる絶縁回路基板上にLEDチップを実装し、このLEDチップを覆うように透光性樹脂で封止されている。
【0006】
【発明が解決しようとする課題】
上記した上面発光タイプのLEDパッケージや、側面発光タイプのLEDパッケージなどでは、光の指向特性への配慮は希薄のため多数のLEDパッケージを使用しなければならず、低コストの要求を満足することはできないと言う問題があった。
【0007】
本発明は上記従来の課題に鑑みなされたものであり、その目的は、LEDパッケージの使用個数を低減させ、また、指向特性の制御可能で安価な発光ダイオードを提供するものである。
【0008】
【課題を解決するための手段】
上記目的を達成するために、本発明における発光ダイオードは、回路基板にLEDチップを実装し、該LEDチップを透光性樹脂(第1の透光性樹脂)で封止した発光ダイオードにおいて、前記回路基板の表面に反射薄膜を設け、且つ前記第1の透光性樹脂を屈折率の異なる第2の透光性樹脂で前記第1の透光性樹脂の側面周囲のみを覆うと共に、該第2の透光性樹脂の屈折率を前記第1の透光性樹脂の屈折率より大きく設定し、前記両者の屈折率の差を任意に選択することにより、前記発光ダイオードの側面発光強度を向上させたことを特徴とする。
【0011】
【発明の実施の形態】
以下、図面に基づいて本発明における発光ダイオードについて説明する。図1は、本発明の第1の実施の形態に係わる発光ダイオードの断面図である。
【0012】
図1において、1は発光ダイオードであり、その構成は、ガラスエポキシ樹脂などよりなる絶縁性を有する回路基板2の表面には、LEDチップ3を実装時に必要な図示しない電極が形成されている。前記回路基板2の表面には、電極形成時のAg又はAuメッキ部等の反射薄膜が設けられていて、反射効率を良くしている。前記回路基板2の略中央部にLEDチップ3を実装した後、該LEDチップ3を覆うように第1の透光性樹脂4で封止した後、その側面周囲を前記第1の透光性樹脂4より大きい屈折率を有する第2の透光性樹脂5で覆う。
【0013】
以上述べた構成の発光ダイオードの作用・効果について説明する。図3は、本発明の光線追跡模式図、図4は、比較例として、従来構成の光線追跡模式図である。図3において、上記した第1の透光性樹脂4は、エポキシ樹脂で、その屈折率は、任意で、例えば、n=1.48、第2の透光性樹脂5は、エポキシ樹脂で、その屈折率は、任意で、例えば、n=1.55程度に設定する。
【0014】
ここで、一例として、光ファイバーについて考察する。光ファイバーは、中心(コア)部とその周辺には、コアよりも屈折率が低い閉じ込め層(クラッド)が付加されている。この場合、光線はクラッドにより閉じ込められ、光は低損で伝播する。これは屈折率差を利用して臨界角を深くすることを目的としているものである。
【0015】
図1及び図3において、前記LEDチップ3からの出射光は、前記第1の透光性樹脂4(n=1.48)の側面周囲を第2の透光性樹脂5(n=1.55)で覆うことにより、傾斜率構造を形成するものである。上記した光ファイバーと異なり反射臨界角を浅くして光を放出しやすくするものである。これにより、側面方向に放出される光に対する臨界角が浅くなり、透過光▲1▼に示すように、側面発光強度が向上される。屈折率を任意に選択することにより、発光ダイオードの指向特性が制御することが可能である。
【0016】
比較例として示した従来構成の光線追跡模式図(図4)は、前記第1の透光性樹脂4(n=1.55)を、これより屈折率の小さい第2の透光性樹脂5(n=1.00)で覆うことで、LEDチップ3からの出射光は、上記した光ファイバーと同様に、屈折率差により側面方向へ放出される光に対する臨界角が深くなり、一部の光りは閉じ込められ屈折光▲2▼のように放出されて側面発光強度が弱められる。
【0017】
図2は、本発明の第2の実施の形態に係わる発光ダイオードの断面図である。上記した第1の実施の形態と異なるところは、前記第1の透光性樹脂4(n=1.48)の全面周囲を第2の透光性樹脂5(n=1.55)で完全に覆うものである。
【0018】
上記構成の発光ダイオードの作用・効果は、第1の実施の形態と同様に、前記LEDチップ3からの出射光は、側面方向に放出される光に対する臨界角が浅くなり、前記第1の透光性樹脂4と第2の透光性樹脂5の境界で屈折を繰り返して、透過光▲1▼として倍加し、側面発光強度が向上される。屈折率を任意に選択することにより、発光ダイオードの指向角度が制御でき、指向特性が制御することが可能である。
【0019】
【発明の効果】
以上説明したように、本発明によれば、回路基板に実装されたLEDチップの封止樹脂の側面または全面周囲を、封止樹脂より屈折率の大きい樹脂で覆うことにより、傾斜率構造を形成する。これにより屈折臨界角が変化し、広指向特性を実現することができる。屈折率差を任意に選択することにより、指向特性が制御可能となる。本発明のLEDチップを携帯電話のキー照明に用いることにより、部品点数が低減し、発光ムラが緩和される。安価な発光ダイオードを提供することが可能である。
【図面の簡単な説明】
【図1】本発明の第1の実施の形態に係わる発光ダイオードの断面図である。
【図2】本発明の第2の実施の形態に係わる発光ダイオードの断面図である。
【図3】本発明の光線追跡模式図である。
【図4】比較例として、従来構成の光線追跡模式図である。
【図5】従来の上面発光LEDパッケージを使用した携帯電話の正面図である。
【符号の説明】
1 発光ダイオード
2 回路基板
3 LEDチップ
4 第1の透光性樹脂
5 第2の透光性樹脂
第1の透光性樹脂の屈折率
第2の透光性樹脂の屈折率
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting diode used in consumer equipment such as a personal computer, a printer, a PDA, a facsimile, a pager, and a mobile phone.
[0002]
[Prior art]
In recent years, a liquid crystal display device having a thin and easy-to-see backlight mechanism has been widely used as a display device of various electronic devices such as notebook personal computers equipped with optical communication functions, PDAs, and mobile phones. As a conventional electronic device equipped with such an LCD, a light emitting diode is widely used for LCD backlights of mobile phones and various key illuminations of mobile phones. (For example, unpublished patent document 1)
[0003]
[Unpublished Patent Document 1]
Patent application 2002-024811 (first page, FIG. 7)
[0004]
The above-mentioned unpublished patent document 1 was filed earlier by the present applicant, and FIG. 5 is disclosed as its prior art, and is a front view of a mobile phone that is generally used conventionally. is there. In FIG. 5, reference numeral 10 denotes a case main body, and a substantially rectangular LCD 11 is disposed on the upper side of the case main body. Reference numeral 12 denotes an LED package for an LCD backlight, which uses about 1 to 4 (3 in FIG. 5). In addition, a plurality of key switches 13 for operation are arranged on the lower side of the case body 10, and about 4 to 20 pieces (16 pieces in FIG. 5) are used for the backlight of these key switches 13. A number of LED packages 12 are used.
[0005]
An LED package (not shown) currently used is mounted with an LED chip on an insulating circuit substrate made of glass epoxy resin, for example, and is sealed with a translucent resin so as to cover the LED chip. .
[0006]
[Problems to be solved by the invention]
In the above-mentioned top-emitting LED package, side-emitting LED package, etc., consideration for light directivity is dilute, so a large number of LED packages must be used, and low-cost requirements must be satisfied. There was a problem that I could not.
[0007]
The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to provide an inexpensive light-emitting diode in which the number of LED packages used is reduced and the directivity can be controlled.
[0008]
[Means for Solving the Problems]
To achieve the above object, the light emitting diode of the present invention, an LED chip mounted on the circuit board, the light-emitting diode sealed the LED chips in the light-transmitting resin (first light-transmitting resin), the A reflective thin film is provided on the surface of the circuit board, and the first translucent resin is covered only with the second translucent resin having a different refractive index around the side surface of the first translucent resin . By setting the refractive index of the translucent resin 2 higher than the refractive index of the first translucent resin and arbitrarily selecting the difference in refractive index between the two, the side emission intensity of the light emitting diode is improved. It was made to be characterized.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the light-emitting diode according to the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a light emitting diode according to a first embodiment of the present invention.
[0012]
In FIG. 1, reference numeral 1 denotes a light emitting diode, and an electrode (not shown) necessary for mounting the LED chip 3 is formed on the surface of an insulating circuit board 2 made of glass epoxy resin or the like. The surface of the circuit board 2 is provided with a reflective thin film such as an Ag or Au plated portion at the time of electrode formation to improve the reflection efficiency. After mounting the LED chip 3 on the substantially central portion of the circuit board 2, the LED chip 3 is sealed with the first light-transmitting resin 4 so as to cover the LED chip 3, and then the periphery of the side surface is the first light-transmitting property. Cover with a second translucent resin 5 having a refractive index greater than that of the resin 4.
[0013]
The operation and effect of the light emitting diode configured as described above will be described. FIG. 3 is a ray tracing schematic diagram of the present invention, and FIG. 4 is a ray tracing schematic diagram of a conventional configuration as a comparative example. In FIG. 3, the first translucent resin 4 described above is an epoxy resin, and its refractive index is arbitrary. For example, n 1 = 1.48, and the second translucent resin 5 is an epoxy resin. The refractive index is arbitrarily set, for example, about n 2 = 1.55.
[0014]
Here, an optical fiber will be considered as an example. In the optical fiber, a confinement layer (clad) having a refractive index lower than that of the core is added to the center (core) portion and the periphery thereof. In this case, the light beam is confined by the cladding, and the light propagates with low loss. This is intended to deepen the critical angle by utilizing the refractive index difference.
[0015]
In FIG. 1 and FIG. 3, the light emitted from the LED chip 3 passes through the side surface of the first light-transmitting resin 4 (n 1 = 1.48) and the second light-transmitting resin 5 (n 2 = 1.55) to form a gradient structure. Unlike the above-described optical fiber, the reflection critical angle is made shallow to facilitate light emission. Thereby, the critical angle with respect to the light emitted in the side surface direction becomes shallow, and the side light emission intensity is improved as shown in the transmitted light (1). By arbitrarily selecting the refractive index, the directivity of the light emitting diode can be controlled.
[0016]
The ray tracing schematic diagram (FIG. 4) of the conventional configuration shown as a comparative example shows the first translucent resin 4 (n 1 = 1.55) as the second translucent resin having a smaller refractive index. By covering with 5 (n 2 = 1.00), the emitted light from the LED chip 3 has a deep critical angle with respect to the light emitted in the lateral direction due to the difference in refractive index, similar to the optical fiber described above. This light is confined and emitted as refracted light (2), and the side emission intensity is weakened.
[0017]
FIG. 2 is a cross-sectional view of a light emitting diode according to a second embodiment of the present invention. The difference from the first embodiment described above is that the entire periphery of the first translucent resin 4 (n 1 = 1.48) surrounds the second translucent resin 5 (n 2 = 1.55). It is completely covered with.
[0018]
As in the first embodiment, the operation and effect of the light emitting diode having the above-described structure is that the emitted light from the LED chip 3 has a shallow critical angle with respect to the light emitted in the side surface direction, and the first transparent Refraction is repeated at the boundary between the light-transmitting resin 4 and the second light-transmitting resin 5 to double the transmitted light (1), and the side emission intensity is improved. By arbitrarily selecting the refractive index, the directivity angle of the light emitting diode can be controlled, and the directivity characteristics can be controlled.
[0019]
【The invention's effect】
As described above, according to the present invention, the slope ratio structure is formed by covering the side surface or the entire periphery of the sealing resin of the LED chip mounted on the circuit board with a resin having a higher refractive index than the sealing resin. To do. As a result, the critical angle of refraction changes and a wide directivity can be realized. By arbitrarily selecting the refractive index difference, the directivity can be controlled. By using the LED chip of the present invention for key illumination of a mobile phone, the number of components is reduced and light emission unevenness is alleviated. An inexpensive light-emitting diode can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a light emitting diode according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of a light emitting diode according to a second embodiment of the present invention.
FIG. 3 is a schematic diagram of ray tracing according to the present invention.
FIG. 4 is a ray tracing schematic diagram of a conventional configuration as a comparative example.
FIG. 5 is a front view of a mobile phone using a conventional top-emitting LED package.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Light emitting diode 2 Circuit board 3 LED chip 4 1st translucent resin 5 2nd translucent resin n 1 Refractive index n of 1st translucent resin 2 Refractive index of 2nd translucent resin

Claims (1)

回路基板にLEDチップを実装し、該LEDチップを透光性樹脂(第1の透光性樹脂)で封止した発光ダイオードにおいて、前記回路基板の表面に反射薄膜を設け、且つ前記第1の透光性樹脂を屈折率の異なる第2の透光性樹脂で前記第1の透光性樹脂の側面周囲のみを覆うと共に、該第2の透光性樹脂の屈折率を前記第1の透光性樹脂の屈折率より大きく設定し、前記両者の屈折率の差を任意に選択することにより、前記発光ダイオードの側面発光強度を向上させたことを特徴とする発光ダイオード。In a light-emitting diode in which an LED chip is mounted on a circuit board, and the LED chip is sealed with a light-transmitting resin (first light-transmitting resin), a reflective thin film is provided on the surface of the circuit board, and the first The translucent resin is covered with the second translucent resin having a different refractive index only around the side surface of the first translucent resin, and the refractive index of the second translucent resin is changed to the first translucent resin . A light emitting diode characterized in that the side light emission intensity of the light emitting diode is improved by setting the refractive index larger than that of the light-sensitive resin and arbitrarily selecting a difference in refractive index between the two.
JP2003052775A 2003-02-28 2003-02-28 Light emitting diode Expired - Lifetime JP4282344B2 (en)

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US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
JP5155539B2 (en) * 2005-09-20 2013-03-06 パナソニック株式会社 Light emitting device
JP5155540B2 (en) * 2005-09-20 2013-03-06 パナソニック株式会社 Light emitting device
KR100801008B1 (en) 2005-11-24 2008-02-04 한국 고덴시 주식회사 A COB type LED lamp and method for manufacturing the same
CN100463239C (en) * 2006-02-15 2009-02-18 亿光电子工业股份有限公司 Light emitted semiconductor assembly package structure and producing method thereof
KR101365623B1 (en) * 2007-03-30 2014-02-25 서울반도체 주식회사 Led package with light transmitional housing
JP2009182086A (en) * 2008-01-30 2009-08-13 Kyocera Corp Light emitting device
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JP5388167B2 (en) * 2008-09-08 2014-01-15 日東電工株式会社 Optical semiconductor element sealing sheet and optical semiconductor device using the same
JP5334733B2 (en) * 2009-07-30 2013-11-06 京セラ株式会社 Light emitting device
JP5917796B2 (en) * 2010-07-14 2016-05-18 三菱電機株式会社 LED package device
JP2012044209A (en) * 2011-10-21 2012-03-01 Citizen Electronics Co Ltd Light emitting device
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CN115453790B (en) * 2022-11-09 2023-04-28 惠科股份有限公司 Backlight module and display device

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