JP4483771B2 - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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JP4483771B2
JP4483771B2 JP2005336189A JP2005336189A JP4483771B2 JP 4483771 B2 JP4483771 B2 JP 4483771B2 JP 2005336189 A JP2005336189 A JP 2005336189A JP 2005336189 A JP2005336189 A JP 2005336189A JP 4483771 B2 JP4483771 B2 JP 4483771B2
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led chip
light
lens
mounting substrate
emitting device
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JP2007142278A (en
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洋二 浦野
幹生 桝井
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Panasonic Corp
Panasonic Electric Works Co Ltd
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Panasonic Corp
Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置およびその製造方法に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip) and a method for manufacturing the same.

従来から、LEDチップと、LEDチップが実装された回路基板と、当該回路基板におけるLEDチップの実装面側でLEDチップを囲む金属製(例えば、アルミニウム製)の枠体と、枠体の内側に充填されLEDチップおよび当該LEDチップに接続されたボンディングワイヤを封止した透明樹脂(例えば、エポキシ樹脂、シリコーン樹脂など)からなる封止部とを備えた発光装置が提案されている(例えば、特許文献1,2参照)。ここにおいて、上記特許文献1,2に記載された枠体は、回路基板から離れるにつれて開口面積が徐々に大きくなる形状に形成されるとともに内側面が鏡面となっており、LEDチップから放射された光を反射するリフレクタを兼ねている。   Conventionally, an LED chip, a circuit board on which the LED chip is mounted, a metal (for example, aluminum) frame that surrounds the LED chip on the LED chip mounting surface side of the circuit board, and an inner side of the frame There has been proposed a light emitting device including a sealing portion made of a transparent resin (for example, epoxy resin, silicone resin, etc.) filled with an LED chip and sealed with a bonding wire connected to the LED chip (for example, a patent) References 1 and 2). Here, the frames described in Patent Documents 1 and 2 are formed in a shape in which the opening area gradually increases as the distance from the circuit board increases, and the inner side surface is a mirror surface, which is emitted from the LED chip. It also serves as a reflector that reflects light.

また、上記特許文献2には、LEDチップとして青色光を放射する青色LEDチップを用い、青色LEDチップを封止する透明樹脂に青色LEDチップから放射された光によって励起されて発光する黄色蛍光体を分散させておくことで白色光の発光スペクトルを得ることができる発光装置が提案されている。
特開2001−85748号公報 特開2001−148514号公報
Further, in Patent Document 2, a blue phosphor that emits blue light is used as an LED chip, and a yellow phosphor that emits light when excited by light emitted from the blue LED chip on a transparent resin that seals the blue LED chip. There has been proposed a light emitting device capable of obtaining an emission spectrum of white light by dispersing.
JP 2001-85748 A JP 2001-148514 A

ところで、上述の発光装置において、封止部の材料としてエポキシ樹脂を用いたものでは、−40℃の低温期間と80℃の高温期間とを交互に繰り返すヒートサイクル試験(温度サイクル試験)を行うと、高温時に回路基板からなる実装基板の導体パターンの熱膨張に起因してボンディングワイヤが断線してしまうことがあった。また、封止部の材料としてエポキシ樹脂を用いたものでは、シリコーン樹脂を用いたものに比べて耐候性が低いという不具合があった。   By the way, in the above-described light emitting device, when an epoxy resin is used as a material for the sealing portion, when a heat cycle test (temperature cycle test) in which a low temperature period of −40 ° C. and a high temperature period of 80 ° C. are alternately performed is performed. When the temperature is high, the bonding wire may be disconnected due to thermal expansion of the conductor pattern of the mounting substrate made of the circuit board. Moreover, the thing using an epoxy resin as a material of a sealing part had the malfunction that a weather resistance was low compared with the thing using a silicone resin.

これに対して、上述の発光装置において、封止部の材料としてシリコーン樹脂を用いたものでは、封止部がゲル状であって弾性を有しており、ヒートサイクル試験の高温時にボンディングワイヤが断線するのを防止することができるが、封止部の材料であるシリコーン樹脂の線膨張率が枠体の材料であるアルミニウムの線膨張率の10倍以上の値であり、両者の線膨張率差に起因してヒートサイクル試験の低温時に封止部中にボイドが発生してしまうという不具合があった。   On the other hand, in the light emitting device described above, in the case where a silicone resin is used as the material of the sealing portion, the sealing portion is gel-like and elastic, and the bonding wire is not heated at the high temperature of the heat cycle test. Although it is possible to prevent disconnection, the linear expansion coefficient of the silicone resin that is the material of the sealing portion is a value that is 10 times or more that of aluminum that is the material of the frame, and the linear expansion coefficient of both Due to the difference, there was a problem that voids were generated in the sealing portion at low temperatures in the heat cycle test.

また、上述の発光装置においては、枠体の内側面を鏡面とすることでLEDチップからの光を効率的に封止部の外部へ取り出すようにしているが、枠体の内側面での反射時に光損失が生じてしまうという不具合があった。   Further, in the above light emitting device, the inner surface of the frame body is used as a mirror surface so that light from the LED chip is efficiently extracted to the outside of the sealing portion. There was a problem that light loss sometimes occurred.

また、上記特許文献2には、LEDチップおよびLEDチップに接続されたボンディングワイヤを封止する封止部の一部を凸レンズ状の形状とした発光装置が記載されているが、封止部の一部ないし全部に蛍光体を分散させてあるので、蛍光体の濃度が封止部の位置によってばらつきやすく、色むらの原因になってしまう。また、封止部の全体に蛍光体を分散させる場合には蛍光体の使用量が多くなり、コストが高くなってしまうという不具合があった。これに対して、蛍光体を透明材料とともに成形した成形品からなるドーム状の色変換部材を封止部に重ねて配置されたレンズとの間に空気層が形成される形で配設した構成のものが提案されているが、レンズの形状によってはレンズと空気層との界面での全反射に起因して光出力が低下してしまうことがあった。   Moreover, although the said patent document 2 has described the light-emitting device which made a part of sealing part which seals the LED chip and the bonding wire connected to the LED chip into the shape of a convex lens, Since the phosphor is dispersed in part or all, the concentration of the phosphor tends to vary depending on the position of the sealing portion, which causes color unevenness. Further, when the phosphor is dispersed throughout the sealing portion, there is a problem that the amount of the phosphor used is increased and the cost is increased. On the other hand, a configuration in which a dome-shaped color conversion member made of a molded product obtained by molding a phosphor together with a transparent material is disposed in such a manner that an air layer is formed between the lens and the lens disposed on the sealing portion. However, depending on the shape of the lens, the light output may decrease due to total reflection at the interface between the lens and the air layer.

本発明は上記事由に鑑みて為されたものであり、その目的は、信頼性を高めることができるとともに光出力の向上を図れ、且つ、色むらの発生を抑制可能な発光装置およびその製造方法を提供することにある。   The present invention has been made in view of the above-mentioned reasons, and an object of the present invention is to provide a light emitting device capable of improving reliability, improving light output, and suppressing occurrence of color unevenness, and a method for manufacturing the same. Is to provide.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲んだ枠体と、枠体の内側でLEDチップを封止した封止樹脂材料からなりゲル状のシリコーン樹脂である封止部と、封止部および枠体に重なる形で配置された成形品からなるレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板との間にレンズおよび枠体を収納する形で実装基板に固着されたドーム状の色変換部材とを備え、枠体が透明樹脂の成形品からなり、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率および枠体の屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてなることを特徴とする。 The invention of claim 1 includes an LED chip, a mounting substrate on which the LED chip is mounted, a frame body that surrounds the LED chip on the mounting surface side of the LED chip, and an LED chip that is sealed inside the frame body. and a sealing portion which is Rigel like silicone resins from the sealing resin material sealed, and lenses made of molded articles arranged in a manner overlapping the sealing portion and the frame, the light emitted from the LED chip A molded product that is molded with a transparent material that is excited and emits light of a color different from the emission color of the LED chip, and is fixed to the mounting substrate in such a manner that a lens and a frame are housed between the mounting substrate and the lens. A dome-shaped color conversion member, the frame is made of a transparent resin molded product, and the transparent material does not fall below the refractive index of the lens and the refractive index of the frame between the color conversion member and at least the light exit surface of the lens. Resin material The transparent resin layer is interposed composed characterized by comprising.

この発明によれば、封止部がゲル状のシリコーン樹脂である封止樹脂材料により形成されるとともに枠体が透明樹脂の成形品からなるので、従来のように枠体が金属材料により形成されている場合に比べて枠体と封止部との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部にボイドが発生するのを抑制することができるから、信頼性を高めることができ、しかも、枠体で光の反射損失が生じるのを抑制することができるから、光出力の向上を図れ、また、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率および枠体の屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてあるので、色変換部材とレンズとの間に空気層を介在させてある場合に比べて、レンズの光出射面での全反射を抑制でき、光出力の向上を図れ、また、色変換部材がLEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品からなるので、色むらの発生を抑制することができる。 According to this invention, since the sealing portion is formed of the sealing resin material that is a gel-like silicone resin and the frame body is formed of a transparent resin molded product, the frame body is formed of a metal material as in the past. The difference in linear expansion coefficient between the frame and the sealing part can be reduced compared to the case where the sealing part has a low temperature, and the generation of voids in the sealing part at the low temperature of the heat cycle test can be suppressed. In addition, since it is possible to suppress the occurrence of light reflection loss in the frame, it is possible to improve the light output, and the lens between the color conversion member and at least the light exit surface of the lens. Since a transparent resin layer made of a transparent resin material that does not fall below the refractive index of the frame body and the refractive index of the frame is interposed, compared to the case where an air layer is interposed between the color conversion member and the lens, Suppresses total reflection at the light exit surface In addition, the light output can be improved, and the color conversion member is excited by the light emitted from the LED chip, and a phosphor that emits light of a color different from the emission color of the LED chip is molded with a transparent material. Therefore, the occurrence of uneven color can be suppressed.

請求項2の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを封止した封止樹脂材料からなりゲル状のシリコーン樹脂である封止部と、封止部に重なる形で配置された成形品からなるレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板との間にレンズおよび封止部を収納する形で実装基板に固着されたドーム状の色変換部材とを備え、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてなることを特徴とする。 The invention according to claim 2, LED chip and a mounting substrate on which the LED chip is mounted, Rigel like silicone resins from the sealing resin material sealing the LED chip mounting surface of the LED chip in the mounting board It emits the sealing portion is, the lenses consisting placed moldings in a manner overlapping the sealing unit, light of a different color from the excited by the light emitted from the LED chip emitting color of the LED chip A molded product obtained by molding a phosphor together with a transparent material, and a dome-shaped color conversion member fixed to the mounting substrate so as to accommodate a lens and a sealing portion between the mounting substrate and the color conversion member; A transparent resin layer made of a transparent resin material not lower than the refractive index of the lens is interposed between the lens and the light exit surface.

この発明によれば、封止部がゲル状のシリコーン樹脂からなる封止樹脂材料により形成されており、従来のような金属材料により形成された枠体が不要なので、ヒートサイクル試験の低温時に封止部にボイドが発生するのを抑制することができるから、信頼性を高めることができ、しかも、光出力の向上を図れ、また、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率の屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてあるので、色変換部材とレンズとの間に空気層を介在させてある場合に比べて、レンズの光出射面での全反射を抑制でき、光出力の向上を図れ、また、色変換部材がLEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品からなるので、色むらの発生を抑制することができる。 According to the present invention, the sealing portion is formed of a sealing resin material made of a gel-like silicone resin, and a frame body formed of a metal material as in the prior art is unnecessary. Since it is possible to suppress the occurrence of voids in the stop portion, the reliability can be improved, and the light output can be improved, and the lens is provided between the color conversion member and at least the light exit surface of the lens. Since a transparent resin layer made of a transparent resin material that is not lower than the refractive index of the lens is interposed, the light emitting surface of the lens is compared with a case where an air layer is interposed between the color conversion member and the lens. Can reduce the total reflection at the light source, improve the light output, and the color conversion member is excited by the light emitted from the LED chip, and the phosphor that emits light of a color different from the emission color of the LED chip is transparent Material and Since a molded article obtained by forming the well, it is possible to suppress the occurrence of color unevenness.

請求項3の発明は、請求項1または請求項2の発明において、前記実装基板は、前記LEDチップが実装される金属板、該金属板側とは反対の表面に前記LEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともに前記LEDチップに対応する部位に窓孔が設けられ前記金属板に積層された絶縁性基板とからなり、前記LEDチップは、前記LEDチップと前記金属板との間に両者の線膨張率差に起因して前記LEDチップに働く応力を緩和するサブマウント部材であって前記LEDチップのチップサイズよりもサイズが大きく前記LEDチップと前記金属板とを熱結合させる平板状のサブマウント部材を介して前記金属板に実装されてなることを特徴とする。 The invention of claim 3 is the invention of claim 1 or claim 2, wherein the mounting board, a metal plate before Symbol LED chips Ru is mounted, both of the LED chip to the opposite surface with the metal plate side consists to the insulating substrate on which the LED window hole at a portion corresponding to the chip is Re et provided laminated on the metal plate with a pair of lead patterns electrode respectively electrically connected is provided, wherein the LED chip, A submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the metal plate, and is larger than the chip size of the LED chip. It is mounted on the metal plate through a flat submount member that thermally couples the metal plate and the metal plate .

この発明によれば、前記LEDチップで発生した熱をサブマウント部材および金属板を介して効率良く放熱させることができるとともに、前記LEDチップと前記金属板との線膨張率差に起因して前記LEDチップに働く応力を緩和することができる。 According to the present invention, the heat generated by the LED chip through the sub-mount member and the metal plate it is possible to efficiently radiated, due to the linear expansion coefficient difference between the metal plate and the LED chip Thus, the stress acting on the LED chip can be relaxed.

請求項4の発明は、請求項3の発明において、前記サブマウント部材は、前記LEDチップにおける前記サブマウント部材側の表面が前記色変換部材における前記実装基板側の端縁よりも前記金属板から離れて位置するように厚み寸法が設定されてなることを特徴とする。 The invention according to claim 4, characterized in that in the invention of claim 3, wherein the sub-mount member, said mounting substrate side front Symbol metal plate than the edge of the surface of the submount member side in the color converting member in the LED chip The thickness dimension is set so as to be located away from the head.

この発明によれば、前記LEDチップから側方に放射された光が前記色変換部材と前記実装基板との接合部を通して出射されるのを防止することができる。   According to this invention, it is possible to prevent light emitted from the LED chip from being emitted sideways through the joint portion between the color conversion member and the mounting substrate.

請求項5の発明は、請求項1ないし請求項4の発明において、前記レンズの光入射面と前記封止部との間に介在し前記封止部と同一材料からなる熱応力緩和層を備えてなることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the invention, a thermal stress relaxation layer is provided between the light incident surface of the lens and the sealing portion and is made of the same material as the sealing portion. It is characterized by.

この発明によれば、前記レンズにかかる熱応力を緩和することができる。   According to the present invention, the thermal stress applied to the lens can be relaxed.

請求項6の発明は、請求項1記載の発光装置の製造方法であって、実装基板にLEDチップを実装してLEDチップとボンディングワイヤとを接続した後、実装基板におけるLEDチップの実装面側に枠体を固着してから、枠体の内側にLEDチップおよびボンディングワイヤを封止する封止樹脂材料を充填して硬化させることにより封止部を形成し、その後、封止部および枠体に重なる形でレンズを配置し、透明樹脂層となる透明樹脂材料を内側に入れた色変換部材を実装基板に対して位置決めして透明樹脂材料を硬化させることにより透明樹脂層を形成することを特徴とする。   The invention according to claim 6 is the method for manufacturing the light emitting device according to claim 1, wherein the LED chip is mounted on the mounting substrate, the LED chip and the bonding wire are connected, and then the LED chip mounting surface side of the mounting substrate. After fixing the frame body to the inside, a sealing resin material for sealing the LED chip and the bonding wire is filled inside the frame body and cured to form a sealing portion, and then the sealing section and the frame body A transparent resin layer is formed by positioning the lens in a form overlapping with the color conversion member with the transparent resin material that becomes the transparent resin layer inside and positioning the color conversion member with respect to the mounting substrate and curing the transparent resin material. Features.

この発明によれば、信頼性を高めることができるとともに光出力の向上を図れ、且つ、色むらの発生を抑制可能な発光装置を提供することができる。   According to the present invention, it is possible to provide a light emitting device that can improve reliability, improve light output, and suppress the occurrence of color unevenness.

請求項1,2の発明では、信頼性を高めることができるとともに光出力の向上を図れ、且つ、色むらの発生を抑制可能であるという効果がある。   According to the first and second aspects of the invention, it is possible to improve the reliability, improve the light output, and suppress the occurrence of color unevenness.

請求項6の発明では、信頼性を高めることができるとともに光出力の向上を図れ、且つ、色むらの発生を抑制可能な発光装置を提供することができるという効果がある。   According to the invention of claim 6, there is an effect that it is possible to provide a light emitting device capable of improving the reliability, improving the light output, and suppressing the occurrence of uneven color.

以下、本実施形態の発光装置について図1〜図5を参照しながら説明する。   Hereinafter, the light-emitting device of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲んだ枠体40と、枠体40の内側でLEDチップ10およびLEDチップ10に接続されたボンディングワイヤ14,14を封止した封止樹脂材料からなりゲル状のシリコーン樹脂である封止部50と、封止部50および枠体40に重なる形で配置された成形品からなるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板20との間にレンズ60および枠体40を収納する形で実装基板20に固着されたドーム状の色変換部材70とを備えており、枠体40が透明樹脂の成形品からなり、色変換部材70とレンズ60の光出射面60bおよび枠体40の外側面との間にレンズ60の屈折率および枠体40の屈折率を下回らない透明樹脂材料からなる透明樹脂層80を介在させてある。また、レンズ60の光入射面60aと封止部50および枠体40との間に封止部50と同一材料からなる熱応力緩和層51を介在させてある。 The light emitting device 1 according to the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame the LED chip 10 and the sealing portion 50 is Rigel like silicone resin such that the bonding wires 14, 14 connected to the LED chip 10 from sealed encapsulation resin material at the inside of the body 40, the sealing portion 50 and the the lenses 60 consisting placed moldings in a manner that overlaps the frame 40, the transparent phosphor to emit light of a different color from the excited by the light emitted from the LED chip 10 and the emission color of the LED chip 10 A dome-shaped color conversion member 70 fixed to the mounting substrate 20 in a form in which the lens 60 and the frame body 40 are accommodated between the molded substrate and the mounting substrate 20. The frame 40 is made of a transparent resin molded product, and the refractive index of the lens 60 and the frame 40 are between the color conversion member 70 and the light emitting surface 60b of the lens 60 and the outer surface of the frame 40. A transparent resin layer 80 made of a transparent resin material not lower than the refractive index is interposed. Further, a thermal stress relaxation layer 51 made of the same material as the sealing portion 50 is interposed between the light incident surface 60 a of the lens 60 and the sealing portion 50 and the frame body 40.

なお、本実施形態の発光装置1は、例えば照明器具の光源として用いるものであり、例えばグリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light emitting device 1 of the present embodiment is used as a light source of a lighting fixture, for example, and is made of a metal (for example, a metal having high thermal conductivity such as Al or Cu) through an insulating layer 90 made of, for example, a green sheet. Since the heat resistance from the LED chip 10 to the instrument body 100 can be reduced and the heat dissipation can be improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. The optical output can be increased and the optical output can be increased. Here, in the case of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture body 100 so that a desired light output is obtained, and the plurality of light emitting devices 1 are connected in series or in parallel. That's fine.

実装基板20は、金属板21と、金属板21側とは反対の表面にLEDチップ10の図示しない両電極それぞれと電気的に接続される一対のリードパターン23,23が設けられ金属板21に積層されたガラスエポキシ(FR4)基板からなる絶縁性基板22とで構成され、絶縁性基板22においてLEDチップ10に対応する部位に窓孔24が設けられており、LEDチップ10で発生した熱が絶縁性基板22を介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuを採用しているが、熱伝導率の比較的高い金属材料であればよく、Cuに限らず、Alなどを採用してもよい。なお、本実施形態では、金属板21が熱伝導性材料からなりLEDチップ10が実装される伝熱板を構成している。また、金属板21と絶縁性基板22とは、絶縁性基板22における金属板21との対向面に形成された金属材料(ここでは、Cu)からなる接合用金属層25(図1および図5参照)を介して固着されている。また、各リードパターン23,23は、Cu膜とNi膜とAg膜との積層膜により構成されている。絶縁性基板22における金属板21側とは反対の表面側には、各リードパターン23,23を覆う形で白色系の樹脂からなるレジスト層26(図1および図5参照)が積層されており、レジスト層26は、中央部に両リードパターン23,23のインナーリード部23a,23aを露出させる円形状の開口窓26aが形成され、周部に各リードパターン23,23のアウターリード部23b,23bそれぞれを露出させる円形状の開口窓26b,26bが形成されている。   The mounting board 20 is provided with a metal plate 21 and a pair of lead patterns 23 and 23 electrically connected to both electrodes (not shown) of the LED chip 10 on the surface opposite to the metal plate 21 side. A window hole 24 is provided in a portion corresponding to the LED chip 10 in the insulating substrate 22, and heat generated in the LED chip 10 is generated. Heat can be transferred to the metal plate 21 without passing through the insulating substrate 22. Here, Cu is employed as the material of the metal plate 21, but any metal material having a relatively high thermal conductivity may be used, and not only Cu but Al or the like may be employed. In the present embodiment, the metal plate 21 is made of a heat conductive material and constitutes a heat transfer plate on which the LED chip 10 is mounted. The metal plate 21 and the insulating substrate 22 are a bonding metal layer 25 (FIG. 1 and FIG. 5) made of a metal material (here, Cu) formed on the surface of the insulating substrate 22 facing the metal plate 21. Fixed) via Each lead pattern 23 is composed of a laminated film of a Cu film, a Ni film, and an Ag film. On the surface side of the insulating substrate 22 opposite to the metal plate 21 side, a resist layer 26 (see FIGS. 1 and 5) made of a white resin is laminated so as to cover the lead patterns 23 and 23. The resist layer 26 is formed with a circular opening window 26a exposing the inner lead portions 23a, 23a of the lead patterns 23, 23 at the center, and the outer lead portions 23b of the lead patterns 23, 23 at the peripheral portion. Circular opening windows 26b and 26b are formed to expose each of 23b.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に実装されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light emitting portion 12 formed of a GaN-based compound semiconductor material and having, for example, a double hetero structure is formed on the main surface side of the conductive substrate 11 by an epitaxial growth method (for example, MOVPE method). ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の金属板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される導体パターン31(図4参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方のリードパターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。また、サブマウント部材30は、導体パターン31の周囲に、LEDチップ10から放射された光を反射する反射膜(例えば、Ni膜とAg膜との積層膜)が形成されている。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. Electrically connected to one lead pattern 23 via a bonding wire 14 provided on the surface and connected to the cathode electrode (see FIG. 4) and a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.) The anode electrode is electrically connected to the other lead pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable. In the submount member 30, a reflective film (for example, a laminated film of a Ni film and an Ag film) that reflects light emitted from the LED chip 10 is formed around the conductor pattern 31.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。本実施形態では、LEDチップ10をサブマウント部材30を介して金属板21に実装してあるので、LEDチップ10で発生した熱をサブマウント部材30および金属板21を介して効率良く放熱させることができるとともに、LEDチップ10と金属板21との線膨張率差に起因してLEDチップ10に働く応力を緩和することができる。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed. In this embodiment, since the LED chip 10 is mounted on the metal plate 21 via the submount member 30, the heat generated by the LED chip 10 can be efficiently radiated via the submount member 30 and the metal plate 21. In addition, the stress acting on the LED chip 10 due to the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21 can be relaxed.

枠体40は、上述のように透明樹脂(例えば、シリコーン樹脂など)の成形品からなり、円環状に形成されており、実装基板20側の端縁が全周に亘って接着剤からなる接合部75を介して実装基板20に固着されている。なお、枠体40と実装基板20とを接合する接着剤としては、枠体40と同じ材料を用いることが望ましい。   As described above, the frame body 40 is made of a molded product of transparent resin (for example, silicone resin), is formed in an annular shape, and the edge on the mounting substrate 20 side is made of an adhesive over the entire circumference. It is fixed to the mounting substrate 20 via the part 75. Note that the same material as that of the frame body 40 is preferably used as an adhesive for bonding the frame body 40 and the mounting substrate 20.

上述の封止部50の封止樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、例えばアクリル樹脂などを用いてもよい。   The silicone resin is used as the sealing resin material of the sealing portion 50 described above, but is not limited to the silicone resin, and for example, an acrylic resin may be used.

レンズ60は、封止部50側の光入射面60aが平面状に形成され光出射面60bが凸曲面状に形成された平凸レンズ状に形成されている。ここにおいて、レンズ60は、シリコーン樹脂の成形品からなるが、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The lens 60 is formed in a plano-convex lens shape in which the light incident surface 60a on the sealing portion 50 side is formed in a flat shape and the light emitting surface 60b is formed in a convex curved surface shape. Here, the lens 60 is formed of a molded product of silicone resin, but is not limited to a molded product of silicone resin, and may be formed of a molded product of acrylic resin, for example.

熱応力緩和層51は、封止部50と同一材料であるシリコーン樹脂により形成されているが、封止部50およびレンズ60と同等の屈折率を有する材料であれば、シリコーン樹脂以外の材料でもよい。   The thermal stress relaxation layer 51 is formed of a silicone resin that is the same material as the sealing portion 50, but any material other than the silicone resin may be used as long as it has a refractive index equivalent to that of the sealing portion 50 and the lens 60. Good.

ところで、レンズ60は、光出射面60bが球面の一部により形成されており、当該球面の中心がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。言い換えれば、レンズ60は、当該レンズ60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。   By the way, the lens 60 is formed such that the light emitting surface 60b is formed by a part of a spherical surface, and the center of the spherical surface is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. . In other words, the lens 60 is disposed so that the optical axis of the lens 60 is located on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10.

色変換部材70は、シリコーン樹脂のような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接合すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be joined to the mounting substrate 20 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like) at the periphery of the opening.

また、透明樹脂層80は、シリコーン樹脂により形成されているが、シリコーン樹脂に限らず、レンズ60の屈折率および枠体40の屈折率を下回らない透明樹脂材料により形成されていればよい。すなわち、透明樹脂層80は、レンズ60の屈折率および枠体40の屈折率と同じかそれ以上の値の屈折率を有する透明樹脂材料により形成されていればよい。   The transparent resin layer 80 is formed of a silicone resin, but is not limited to the silicone resin, and may be formed of a transparent resin material that does not fall below the refractive index of the lens 60 and the refractive index of the frame body 40. That is, the transparent resin layer 80 only needs to be formed of a transparent resin material having a refractive index that is equal to or higher than the refractive index of the lens 60 and the refractive index of the frame body 40.

ところで、本実施形態の発光装置1では、上述のサブマウント部材30の厚み寸法を、LEDチップ10におけるサブマウント部材30側の表面が色変換部材70における実装基板20側の端縁よりも金属板21から離れて位置するように設定してあり、LEDチップ10から側方に放射された光が色変換部材70と実装基板20との接合部75を通して出射されるのを防止することができる(つまり、LEDチップ10から放射された青色光が色変換部材70を通らずに外部へ出射されるのを防止することができる)。   By the way, in the light-emitting device 1 of this embodiment, the thickness dimension of the submount member 30 described above is such that the surface of the LED chip 10 on the submount member 30 side is a metal plate than the edge of the color conversion member 70 on the mounting substrate 20 side. The light emitted from the LED chip 10 to the side can be prevented from being emitted through the joint 75 between the color conversion member 70 and the mounting substrate 20 ( That is, it is possible to prevent the blue light emitted from the LED chip 10 from being emitted outside without passing through the color conversion member 70).

本実施形態の発光装置1の製造にあたっては、図6(a)に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを接続した後、実装基板20におけるLEDチップ10の実装面側に枠体40を固着してから、図6(b)に示すように、枠体40の内側にLEDチップ10およびボンディングワイヤ14,14を封止する封止樹脂材料を充填して硬化させることにより封止部50を形成し、続いて、図6(c)に示すように、封止部50および枠体40に熱応力緩和層51を介して重なる形でレンズ60を配置し、透明樹脂層80となる透明樹脂材料80aを内側に入れた色変換部材70を用意し、その後、当該色変換部材70を実装基板20に対して位置決めして透明樹脂材料80aを硬化させることにより透明樹脂層80を形成するようにしている。このような製造方法によれば、製造過程で封止部50にボイドが発生しにくくなり、信頼性を高めることができるとともに光出力の向上を図れ、且つ、色むらの発生を抑制可能な発光装置1を提供することができる。   In manufacturing the light emitting device 1 of the present embodiment, as shown in FIG. 6A, after mounting the LED chip 10 on the mounting substrate 20 and connecting the LED chip 10 and the bonding wires 14, 14, the mounting substrate is mounted. After the frame body 40 is fixed to the mounting surface side of the LED chip 10 in 20, the LED chip 10 and the bonding wires 14 and 14 are sealed inside the frame body 40 as shown in FIG. The sealing part 50 is formed by filling and curing the resin material, and then, as shown in FIG. 6C, the sealing part 50 and the frame 40 overlap with the thermal stress relaxation layer 51. The color conversion member 70 in which the lens 60 is arranged and the transparent resin material 80a to be the transparent resin layer 80 is put inside is prepared, and then the color conversion member 70 is positioned with respect to the mounting substrate 20 to be transparent 80 And so as to form a transparent resin layer 80 by curing the. According to such a manufacturing method, it is difficult for voids to be generated in the sealing portion 50 during the manufacturing process, the reliability can be improved, the light output can be improved, and the occurrence of color unevenness can be suppressed. A device 1 can be provided.

以上説明した本実施形態の発光装置1では、封止部50がゲル状のシリコーン樹脂からなる封止樹脂材料により形成されるとともに枠体40が透明樹脂の成形品からなるので、従来のように枠体が金属材料により形成されている場合に比べて枠体40と封止部50との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部50にボイドが発生するのを抑制することができるから、信頼性を高めることができ、しかも、枠体40で光の反射損失が生じるのを抑制することができるから、光出力の向上を図れる。また、色変換部材70とレンズ60の光出射面60bおよび枠体40の外側面との間にレンズ60の屈折率および枠体40の屈折率を下回らない透明樹脂材料からなる透明樹脂層80を介在させてあるので、色変換部材70とレンズ60との間に空気層を介在させてある場合に比べて、レンズ60の光出射面60bでの全反射を抑制でき、光出力の向上を図れる。また、色変換部材70がLEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品からなるので、色むらの発生を抑制することができる。また、本実施形態の発光装置1は、レンズ60の光入射面60aと封止部50および枠体40との間に介在し封止部50と同一材料からなる熱応力緩和層51を備えているので、レンズ60にかかる熱応力を緩和することができる。 In the light emitting device 1 of the present embodiment described above, the sealing portion 50 is formed of a sealing resin material made of a gel-like silicone resin and the frame body 40 is made of a transparent resin molded product. Compared with the case where the frame is made of a metal material, the difference in linear expansion coefficient between the frame 40 and the sealing portion 50 can be reduced, and voids are generated in the sealing portion 50 at the low temperature of the heat cycle test. Therefore, it is possible to improve the reliability, and it is possible to suppress the occurrence of light reflection loss in the frame body 40, so that the light output can be improved. A transparent resin layer 80 made of a transparent resin material that does not fall below the refractive index of the lens 60 and the refractive index of the frame 40 is provided between the color conversion member 70 and the light emitting surface 60 b of the lens 60 and the outer surface of the frame 40. Since it is interposed, compared with the case where an air layer is interposed between the color conversion member 70 and the lens 60, total reflection at the light emitting surface 60b of the lens 60 can be suppressed, and the light output can be improved. . Further, since the color conversion member 70 is formed of a molded product obtained by molding together with a transparent material a phosphor that emits light of a color different from the emission color of the LED chip 10 when excited by the light emitted from the LED chip 10, color unevenness Can be suppressed. In addition, the light emitting device 1 of the present embodiment includes a thermal stress relaxation layer 51 that is interposed between the light incident surface 60 a of the lens 60 and the sealing portion 50 and the frame body 40 and is made of the same material as the sealing portion 50. Therefore, the thermal stress applied to the lens 60 can be relaxed.

ところで、上述の実施形態の発光装置1は、色変換部材70とレンズ60の光出射面60bおよび枠体40の外側面との間にレンズ60の屈折率および枠体40の屈折率を下回らない透明樹脂材料からなる透明樹脂層80を介在させてあるが、透明樹脂層80は、色変換部材70と少なくともレンズ60の光出射面60bとの間に介在させてあればよい。また、上述の実施形態の発光装置1では、枠体40を備えているが、図7に示すように枠体40を備えていない構造を採用してもよい。   By the way, the light-emitting device 1 of the above-described embodiment does not fall below the refractive index of the lens 60 and the refractive index of the frame body 40 between the color conversion member 70 and the light emitting surface 60b of the lens 60 and the outer surface of the frame body 40. Although the transparent resin layer 80 made of a transparent resin material is interposed, the transparent resin layer 80 may be interposed between the color conversion member 70 and at least the light emitting surface 60 b of the lens 60. Further, although the light emitting device 1 of the above-described embodiment includes the frame body 40, a structure that does not include the frame body 40 as illustrated in FIG. 7 may be employed.

また、上述の実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。また、LEDチップ10と実装基板20との線膨張率の差が比較的小さい場合には上記実施形態で説明したサブマウント部材30は必ずしも設ける必要はない。また、実装基板20についても上記実施形態で説明した構造以外の構造を採用してもよい。   Further, in the above-described embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10 and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. In the case of using a SiC substrate or a GaN substrate, the crystal growth substrate has a higher thermal conductivity than the case of using a sapphire substrate as an insulator as the crystal growth substrate. Thermal resistance can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12. Further, when the difference in linear expansion coefficient between the LED chip 10 and the mounting substrate 20 is relatively small, the submount member 30 described in the above embodiment is not necessarily provided. Further, the mounting substrate 20 may employ a structure other than the structure described in the above embodiment.

実施形態の発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device of embodiment. 同上の発光装置の一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view in which the light emitting device same as the above was partially broken. 同上の発光装置の要部概略平面図である。It is a principal part schematic plan view of a light-emitting device same as the above. 同上の発光装置におけるサブマウント部材の概略斜視図である。It is a schematic perspective view of the submount member in a light emitting device same as the above. 同上の発光装置における絶縁性基板を示し、(a)は概略平面図、(b)は(a)のA−B−C−D概略断面図、(c)は一部破断した概略下面図である。The insulating board | substrate in a light-emitting device same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view taken along the line ABCD of (a), and (c) is a schematic bottom view partially broken. is there. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 同上の他の構成例を示す概略断面図である。It is a schematic sectional drawing which shows the other structural example same as the above.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基板
23 リードパターン
26 レジスト層
30 サブマウント部材
40 枠体
50 封止部
60 レンズ
60a 光入射面
60b 光出射面
70 色変換部材
80 透明樹脂層
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating board 23 Lead pattern 26 Resist layer 30 Submount member 40 Frame 50 Sealing part 60 Lens 60a Light incident surface 60b Light emitting surface 70 Color conversion member 80 Transparent resin layer

Claims (6)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲んだ枠体と、枠体の内側でLEDチップを封止した封止樹脂材料からなりゲル状のシリコーン樹脂である封止部と、封止部および枠体に重なる形で配置された成形品からなるレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板との間にレンズおよび枠体を収納する形で実装基板に固着されたドーム状の色変換部材とを備え、枠体が透明樹脂の成形品からなり、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率および枠体の屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてなることを特徴とする発光装置。 An LED chip, a mounting substrate on which the LED chip is mounted, a frame body that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate, and a sealing resin material that seals the LED chip inside the frame body a sealing portion which is Rigel like silicone resin, and lenses made of the sealing portion and a molded article which is arranged in a manner overlapping the frame, is excited by the light emitted from the LED chip emitting of the LED chip A dome-shaped color conversion member that is a molded product obtained by molding a phosphor that emits light of a color different from the color together with a transparent material, and that is fixed to the mounting substrate in such a manner that a lens and a frame are housed between the mounting substrate and the lens. A transparent resin layer made of a transparent resin material having a refractive index of the lens and a refractive index of the frame that is less than the refractive index of the frame between the color conversion member and at least the light exit surface of the lens. The The light emitting device characterized by comprising by Zaisa. LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを封止した封止樹脂材料からなりゲル状のシリコーン樹脂である封止部と、封止部に重なる形で配置された成形品からなるレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板との間にレンズおよび封止部を収納する形で実装基板に固着されたドーム状の色変換部材とを備え、色変換部材と少なくともレンズの光出射面との間にレンズの屈折率を下回らない透明樹脂材料からなる透明樹脂層を介在させてなることを特徴とする発光装置。 An LED chip, a mounting substrate on which the LED chip is mounted, and the sealing portion is Rigel like silicone resins from the sealing resin material sealing the LED chip mounting surface of the LED chip in the mounting substrate, and lenses consisting arranged in a manner overlapping the sealing portion molded product with a transparent material phosphors that emit light of a different color from the excited by the light emitted from the LED chip emitting color of the LED chip molding A dome-shaped color conversion member fixed to the mounting substrate so as to accommodate the lens and the sealing portion between the mounting substrate and the color conversion member and at least the light emitting surface of the lens. A light-emitting device comprising a transparent resin layer made of a transparent resin material not lower than the refractive index of a lens interposed therebetween. 前記実装基板は、前記LEDチップが実装される金属板、該金属板側とは反対の表面に前記LEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともに前記LEDチップに対応する部位に窓孔が設けられ前記金属板に積層された絶縁性基板とからなり、前記LEDチップは、前記LEDチップと前記金属板との間に両者の線膨張率差に起因して前記LEDチップに働く応力を緩和するサブマウント部材であって前記LEDチップのチップサイズよりもサイズが大きく前記LEDチップと前記金属板とを熱結合させる平板状のサブマウント部材を介して前記金属板に実装されてなることを特徴とする請求項1または請求項2記載の発光装置。 The mounting board, a front Symbol metal plate LED chip Ru is mounted, said a pair of lead patterns connected opposite the LED chip both electrodes respectively electrically on the surface is provided with the metal plate side window holes at positions corresponding to the LED chips Re et provided consists of a is an insulating substrate laminated on the metal plate, wherein the LED chip, the linear expansion coefficient difference therebetween between said metal plate and the LED chip through the flat plate-like submount member to the submount a member in size than the chip size of the LED chip and increase the LED chip and the metal plate is thermally coupled to relax the stress due to acting on said LED chip The light emitting device according to claim 1, wherein the light emitting device is mounted on the metal plate . 前記サブマウント部材は、前記LEDチップにおける前記サブマウント部材側の表面が前記色変換部材における前記実装基板側の端縁よりも前記金属板から離れて位置するように厚み寸法が設定されてなることを特徴とする請求項3記載の発光装置。 The sub-mount member is formed of said thickness dimension is set so that the surface of the submount member side is positioned away from the mounting board side front Symbol metal plate than the edge of in the color conversion member in the LED chip The light-emitting device according to claim 3. 前記レンズの光入射面と前記封止部との間に介在し前記封止部と同一材料からなる熱応力緩和層を備えてなることを特徴とする請求項1ないし請求項4のいずれかに記載の発光装置。   The thermal stress relaxation layer which is interposed between the light incident surface of the lens and the sealing part and is made of the same material as the sealing part is provided. The light-emitting device of description. 請求項1記載の発光装置の製造方法であって、実装基板にLEDチップを実装してLEDチップとボンディングワイヤとを接続した後、実装基板におけるLEDチップの実装面側に枠体を固着してから、枠体の内側にLEDチップおよびボンディングワイヤを封止する封止樹脂材料を充填して硬化させることにより封止部を形成し、その後、封止部および枠体に重なる形でレンズを配置し、透明樹脂層となる透明樹脂材料を内側に入れた色変換部材を実装基板に対して位置決めして透明樹脂材料を硬化させることにより透明樹脂層を形成することを特徴とする発光装置の製造方法。   The method for manufacturing a light emitting device according to claim 1, wherein after mounting the LED chip on the mounting substrate and connecting the LED chip and the bonding wire, the frame body is fixed to the mounting surface side of the LED chip on the mounting substrate. Then, a sealing part is formed by filling the inside of the frame body with a sealing resin material that seals the LED chip and the bonding wire and curing, and then the lens is disposed so as to overlap the sealing part and the frame body A transparent resin layer is formed by positioning a color conversion member in which a transparent resin material serving as a transparent resin layer is placed on the mounting substrate and curing the transparent resin material. Method.
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