JP2007088072A - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
JP2007088072A
JP2007088072A JP2005272837A JP2005272837A JP2007088072A JP 2007088072 A JP2007088072 A JP 2007088072A JP 2005272837 A JP2005272837 A JP 2005272837A JP 2005272837 A JP2005272837 A JP 2005272837A JP 2007088072 A JP2007088072 A JP 2007088072A
Authority
JP
Japan
Prior art keywords
led chip
light
fresnel lens
color
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005272837A
Other languages
Japanese (ja)
Inventor
Sakuo Kamata
策雄 鎌田
Yasushi Nishioka
恭志 西岡
Yoji Urano
洋二 浦野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2005272837A priority Critical patent/JP2007088072A/en
Publication of JP2007088072A publication Critical patent/JP2007088072A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device for reducing variations in the color of generated light and reducing height by restraining height dimensions. <P>SOLUTION: The light-emitting device includes an LED chip 10; a packaging substrate 20 where the LED chip 10 is packaged; a frame 40 for surrounding the LED chip 10 at the packaging surface side of the packaging substrate 20; a sealing section 50 that is formed by filling a transparent silicon resin to the inside of the frame, seals the LED chip 10 and bonding wires 14, 14, and is elastic; a Fresnel lens 60 arranged while being overlapped to the sealing section 50; and a cylindrical color conversion member 70 that is a molding in which a phosphor excited by light radiated from the LED chip and radiates light with a color differing from the luminescent color of the LED chip is formed with a transparent material, covers the Fresnel lens at the side of a light emission surface 60b of the Fresnel lens 60, and is arranged while an air layer 80 is formed between the light emission surface and the frame 40. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、実装基板上にLEDチップを実装した発光素子があり、LEDチップと当該LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する波長変換材料としての蛍光体(蛍光顔料、蛍光染料など)とを組み合わせることにより、白色を含めLEDチップの発光色とは異なる色合いの混色光を得る技術が開示されている。   Conventionally, there is a light emitting element in which an LED chip is mounted on a mounting substrate, and a wavelength conversion material that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip and the LED chip. A technique for obtaining mixed color light having a hue different from the emission color of the LED chip including white is disclosed by combining the above phosphors (fluorescent pigments, fluorescent dyes, etc.).

例えば、発光装置として、実装基板の略中央に凹部を設けて、当該凹部の底面の略中央にLEDチップを配置するとともに当該凹部の内部には蛍光体を含有させた色変換部材が充填され、当該発光装置の光取出し面側に光学部材として凸レンズを配置したものがある。(例えば、特許文献1参照)
また、光学部材としてフレネルレンズを用いたものもある。(例えば、特許文献2参照)
特開2005−135983号公報 特開2004−158635号公報(段落番号[0008],図1)
For example, as a light emitting device, a concave portion is provided in the approximate center of the mounting substrate, an LED chip is disposed in the approximate center of the bottom surface of the concave portion, and the concave portion is filled with a color conversion member containing a phosphor. There is one in which a convex lens is arranged as an optical member on the light extraction surface side of the light emitting device. (For example, see Patent Document 1)
Some optical members use Fresnel lenses. (For example, see Patent Document 2)
JP 2005-135983 A Japanese Unexamined Patent Publication No. 2004-158635 (paragraph number [0008], FIG. 1)

しかしながら、上記特許文献1のように光学部材として凸レンズを用いた場合、発光装置としての高さ寸法が大きくなるという問題があった。   However, when a convex lens is used as an optical member as in Patent Document 1, there is a problem that the height dimension of the light emitting device is increased.

また、上記特許文献2においても、LEDチップの発光波長のばらつきによって、生成した光に色ばらつきが発生していた。   Also in Patent Document 2, color variation occurs in the generated light due to variations in the emission wavelength of the LED chip.

本発明は、上記事由に鑑みてなされたものであり、その目的は、生成した光の色ばらつきを低減し、さらに高さ寸法を抑えて低背化を図った発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device that reduces the color variation of generated light and further reduces the height by suppressing the height dimension. .

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲む枠体と、枠体の内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止し且つ弾性を有する封止部と、封止部に重ねて配置されたフレネルレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板の前記実装面側でフレネルレンズおよび枠体を覆いフレネルレンズの光出射面および枠体との間に空気層が形成される形で配設される色変換部材とを備えることを特徴とする。   The invention of claim 1 includes an LED chip, a mounting substrate on which the LED chip is mounted, a frame body that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate, and a transparent resin material that is filled inside the frame body An LED chip and a pair of bonding wires that are electrically connected to the LED chip and sealed with elasticity, a Fresnel lens disposed on the sealing part, and an LED chip A molded product obtained by molding together with a transparent material a phosphor that is excited by light emitted from the LED chip and emits light of a color different from that of the LED chip. A Fresnel lens and a frame are formed on the mounting surface side of the mounting substrate. And a color conversion member disposed in a form in which an air layer is formed between the light emitting surface of the covering Fresnel lens and the frame.

この発明によれば、組立時に色変換部材の組付けが最終工程となるので、LEDチップの発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材を用いることで色ばらつきを低減することができる。さらに、フレネルレンズを用いることで従来の凸レンズに比べて高さ寸法を小さくすることができ、装置全体として高さ寸法を抑えて低背化を図ることができる。   According to this invention, since the assembly of the color conversion member is the final step during assembly, color variation is reduced by using a color conversion member in which the blending of the phosphor with the transparent material is adjusted according to the emission wavelength of the LED chip. can do. Furthermore, by using a Fresnel lens, the height dimension can be made smaller than that of a conventional convex lens, and the overall height of the apparatus can be reduced and the height can be reduced.

以上説明したように、本発明では、生成した光の色ばらつきを低減し、さらに高さ寸法を抑えて低背化を図ることができるという効果がある。   As described above, according to the present invention, there is an effect that the variation in color of the generated light can be reduced, and the height can be reduced to reduce the height.

以下、本発明の実施の形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(実施形態)
以下、本実施形態の発光装置について図1〜図3を参照しながら説明する。
(Embodiment)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置されるフレネルレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってフレネルレンズ60の光出射面60b側にフレネルレンズ60を覆い光出射面60bおよび枠体40との間に空気層80が形成される形で配設される円筒状の色変換部材70とを備えている。なお、発光装置1は、例えば、グリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100を介して実装することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   The light emitting device 1 of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame body 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame body. The LED 40 and the bonding wires 14 and 14 connected to the LED chip 10 are formed by filling a transparent resin material on the inside of the LED 40 and have an elastic sealing part 50; A molded product in which a Fresnel lens 60 arranged in an overlapping manner and a phosphor that is excited by light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10 are molded together with a transparent material. The Fresnel lens 60 is disposed on the light emitting surface 60b side so as to cover the Fresnel lens 60 and form an air layer 80 between the light emitting surface 60b and the frame body 40. Cylindrical and a color conversion member 70 that. In addition, the light emitting device 1 is mounted on the LED main body 100 via an instrument body 100 made of metal (for example, metal having high thermal conductivity such as Al and Cu) via an insulating layer 90 made of a green sheet, for example. Since the heat resistance from 10 to the instrument body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, the input power can be increased and the light output can be increased. .

実装基板20は、LEDチップ10が搭載される金属板21と、金属板21に積層されたガラスエポキシ基板からなる絶縁性基材22とで構成されており、当該絶縁性基材22における金属板21側とは反対側の表面にLEDチップ10の図示しない両電極それぞれと電気的に接続される一対のリードパターン23が設けられるとともに、絶縁性基材22においてLEDチップ10に対応する部位に窓孔24が設けられており、LEDチップ10で発生した熱が絶縁性基材22を介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuを採用しているが、熱伝導率の比較的高い金属材料であればよく、Cuに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、色変換部材70により覆われていない部位がアウターリード部23bとなっている。   The mounting substrate 20 includes a metal plate 21 on which the LED chip 10 is mounted, and an insulating base material 22 made of a glass epoxy substrate laminated on the metal plate 21, and the metal plate in the insulating base material 22. A pair of lead patterns 23 that are electrically connected to both electrodes (not shown) of the LED chip 10 are provided on the surface opposite to the 21 side, and a window is formed at a portion corresponding to the LED chip 10 in the insulating substrate 22. A hole 24 is provided so that heat generated in the LED chip 10 can be transferred to the metal plate 21 without passing through the insulating base material 22. Here, Cu is employed as the material of the metal plate 21, but any metal material having a relatively high thermal conductivity may be used, and not only Cu but Al or the like may be employed. In addition, the metal plate 21 and the insulating base material 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and a portion not covered with the color conversion member 70 is an outer lead portion 23b.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に実装されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and has a laminated structure portion having, for example, a double hetero structure. ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の金属板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される電極パターン31(図4参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方のリードパターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。また、サブマウント部材30は、電極パターン31の周囲に、LEDチップ10から放射された光を反射する反射膜(例えば、Ni膜とAg膜との積層膜)が形成されている。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. An electrode pattern 31 (see FIG. 4) provided on the surface and connected to the cathode electrode and electrically connected to one lead pattern 23 via a bonding wire 14 made of a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.) The anode electrode is electrically connected to the other lead pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable. Further, the submount member 30 is formed with a reflective film (for example, a laminated film of a Ni film and an Ag film) that reflects light emitted from the LED chip 10 around the electrode pattern 31.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   Although the silicone resin is used as the transparent resin material of the sealing portion 50 described above, not only the silicone resin but also an acrylic resin may be used.

これに対して、枠体40は、円筒状の形状であって、透明樹脂の成形品により構成されているが、当該成形品に用いる透明樹脂としては、シリコーン樹脂を採用している。要するに、本実施形態では、封止部50の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料により枠体40を形成してある。ここに、本実施形態では、枠体40を実装基板20に固着した後で枠体40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成してある。なお、上記透明樹脂材料としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40をアクリル樹脂の成形品により構成することが望ましい。   On the other hand, the frame 40 has a cylindrical shape and is formed of a transparent resin molded product, and a silicone resin is used as the transparent resin used in the molded product. In short, in the present embodiment, the frame body 40 is formed of a translucent material having a linear expansion coefficient equivalent to that of the transparent resin material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the mounting substrate 20, the sealing resin 50 is formed by filling (potting) the transparent resin material inside the frame body 40 and thermosetting the same. is there. In the case where an acrylic resin is used as the transparent resin material instead of the silicone resin, it is desirable that the frame body 40 be formed of a molded product of acrylic resin.

フレネルレンズ60は、封止部50側の光入射面60aを平面状に形成し、色変換部材70の内面70aに対向した光出射面60bを同心円状の複数の輪帯レンズに分けて構成されており、全体として略平板状に形成される。ここにおいて、フレネルレンズ60は、シリコーン樹脂の成形品により構成してあり、封止部50と屈折率が同じ値となっているが、フレネルレンズ60は、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The Fresnel lens 60 is configured by forming the light incident surface 60a on the sealing portion 50 side in a flat shape and dividing the light emitting surface 60b facing the inner surface 70a of the color conversion member 70 into a plurality of concentric annular lenses. As a whole, it is formed in a substantially flat plate shape. Here, the Fresnel lens 60 is formed of a molded product of silicone resin and has the same refractive index as that of the sealing portion 50. However, the Fresnel lens 60 is not limited to a molded product of silicone resin, for example, Alternatively, it may be formed of an acrylic resin molded product.

ところで、フレネルレンズ60は、当該フレネルレンズ60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。なお、LEDチップ10の側面から放射された光は封止部50および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体を励起したり蛍光体には衝突せずに色変換部材70を透過したりする。   By the way, the Fresnel lens 60 is disposed so that the optical axis of the Fresnel lens 60 is located on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50 and the air layer 80 to reach the color conversion member 70 and does not excite the phosphor of the color conversion member 70 or collide with the phosphor. Or the color conversion member 70 is transmitted.

色変換部材70は、シリコーン樹脂のような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、一端を開口した円筒体に形成され、内面70aがフレネルレンズ60の光出射面60bに沿った平面状に形成されている。したがって、フレネルレンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 is formed in a cylindrical body having one end opened, and the inner surface 70 a is formed in a planar shape along the light emitting surface 60 b of the Fresnel lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the Fresnel lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the mounting substrate 20 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like) on the periphery of the opening.

以上説明した本実施形態の発光装置1では、フレネルレンズ60を用いることで、従来の凸レンズに比べて高さ寸法を小さくすることができ、装置全体として高さ寸法を抑えて低背化を図ることができる。   In the light emitting device 1 of the present embodiment described above, by using the Fresnel lens 60, the height dimension can be reduced as compared with the conventional convex lens, and the overall height of the apparatus is reduced and the height is reduced. be able to.

また、本実施形態の発光装置1では、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50を備え、枠体40が透明樹脂の成形品からなるので、枠体が金属材料により形成されている場合に比べて枠体40と封止部50との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部50にボイドが発生するのを抑制することができるから、信頼性を高めることができ、しかも、枠体40で光の反射損失が生じるのを抑制することができるから、光出力の向上を図れる。   In the light emitting device 1 of the present embodiment, the LED chip 10 and the bonding wires 14 and 14 connected to the LED chip 10 are sealed and elastically formed by filling the frame body 40 with a transparent resin material. Since the frame body 40 is made of a transparent resin molded product, the linear expansion coefficient difference between the frame body 40 and the sealing section 50 is compared with the case where the frame body is formed of a metal material. Since it is possible to suppress the generation of voids in the sealing portion 50 at the low temperature of the heat cycle test, the reliability can be improved and the frame body 40 has a light reflection loss. Since generation | occurrence | production can be suppressed, the improvement of an optical output can be aimed at.

また、本実施形態の発光装置1では、色変換部材70はフレネルレンズ60の光出射面60bおよび枠体40との間に空気層80が形成される形で配設すればよく、色変換部材70をフレネルレンズ60および枠体40に密着させる必要がないので、色変換部材70の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる。また、本実施形態の発光装置1では、組立時に色変換部材70の組付けが最終工程となるので、LEDチップ10の発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材70を用いることで色ばらつきを低減することもできる。   Further, in the light emitting device 1 of the present embodiment, the color conversion member 70 may be disposed in such a manner that an air layer 80 is formed between the light emitting surface 60b of the Fresnel lens 60 and the frame body 40. Since 70 does not need to be in close contact with the Fresnel lens 60 and the frame body 40, it is possible to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the color conversion member 70. Further, in the light emitting device 1 of the present embodiment, since the assembly of the color conversion member 70 is the final process at the time of assembly, the color conversion member 70 in which the blending of the phosphor with respect to the transparent material is adjusted according to the emission wavelength of the LED chip 10. By using, color variations can be reduced.

また、本実施形態の発光装置では、上述のように色変換部材70とフレネルレンズ60との間に空気層80が形成されているので、色変換部材70に外力が作用したときに色変換部材70が変形してフレネルレンズ60に当接する可能性が低くなって上記外力により色変換部材70に発生した応力がフレネルレンズ60および封止部50を通してLEDチップ10や各ボンディングワイヤ14,14に伝達されるのを抑制でき、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14,14の断線が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材70とフレネルレンズ60との間に上記空気層80が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点がある。   In the light emitting device of this embodiment, since the air layer 80 is formed between the color conversion member 70 and the Fresnel lens 60 as described above, the color conversion member when an external force acts on the color conversion member 70. The possibility that 70 is deformed and abuts against Fresnel lens 60 is reduced, and the stress generated in color conversion member 70 by the external force is transmitted to LED chip 10 and bonding wires 14 and 14 through Fresnel lens 60 and sealing portion 50. Therefore, there is an advantage that the reliability is improved because the variation of the light emission characteristics of the LED chip 10 and the disconnection of the bonding wires 14 and 14 are less likely to occur due to the external force. In addition, since the air layer 80 is formed between the color conversion member 70 and the Fresnel lens 60, there is an advantage that moisture in the external atmosphere hardly reaches the LED chip 10.

また、色変換部材70とフレネルレンズ60との間に上記空気層80が形成されていることにより、LEDチップ10から放射され封止部50およびフレネルレンズ60を通して色変換部材70に入射し当該色変換部材70中の黄色蛍光体の粒子により散乱された光のうちフレネルレンズ60側へ散乱されてフレネルレンズ60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   Further, since the air layer 80 is formed between the color conversion member 70 and the Fresnel lens 60, the air layer 80 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the Fresnel lens 60. Of the light scattered by the yellow phosphor particles in the conversion member 70, the amount of light scattered to the Fresnel lens 60 side and transmitted through the Fresnel lens 60 can be reduced, and the light extraction efficiency to the outside as the entire apparatus is improved. There is an advantage that you can.

ところで、上述の実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in the above-described embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10, and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. In the case of using a SiC substrate or a GaN substrate, the crystal growth substrate has a higher thermal conductivity than the case of using a sapphire substrate as an insulator as the crystal growth substrate. Thermal resistance can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 同上におけるサブマウント部材の概略斜視図である。It is a schematic perspective view of the submount member in the same as the above.

符号の説明Explanation of symbols

10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基材
23 リードパターン
30 サブマウント部材
40 枠体
50 封止部
60 フレネルレンズ
60a 光入射面
60b 光出射面
70 色変換部材
80 空気層
DESCRIPTION OF SYMBOLS 10 LED chip 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating base material 23 Lead pattern 30 Submount member 40 Frame 50 Sealing part 60 Fresnel lens 60a Light incident surface 60b Light output surface 70 Color conversion member 80 Air layer

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲む枠体と、枠体の内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止し且つ弾性を有する封止部と、封止部に重ねて配置されたフレネルレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であって実装基板の前記実装面側でフレネルレンズおよび枠体を覆いフレネルレンズの光出射面および枠体との間に空気層が形成される形で配設される色変換部材とを備えることを特徴とする発光装置。 LED chip, mounting substrate on which LED chip is mounted, frame body surrounding LED chip on the mounting surface side of LED chip on the mounting substrate, and LED chip formed by filling transparent resin material inside the frame body And a pair of bonding wires electrically connected to the LED chip and sealed by an elastic sealing portion, a Fresnel lens arranged over the sealing portion, and light emitted from the LED chip A light emitting surface of the Fresnel lens, which is a molded product obtained by molding together with a transparent material a phosphor that emits light of a color different from the emission color of the LED chip, covering the Fresnel lens and the frame on the mounting surface side of the mounting substrate And a color conversion member disposed in such a manner that an air layer is formed between the light emitting device and the frame.
JP2005272837A 2005-09-20 2005-09-20 Light-emitting device Withdrawn JP2007088072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005272837A JP2007088072A (en) 2005-09-20 2005-09-20 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005272837A JP2007088072A (en) 2005-09-20 2005-09-20 Light-emitting device

Publications (1)

Publication Number Publication Date
JP2007088072A true JP2007088072A (en) 2007-04-05

Family

ID=37974783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005272837A Withdrawn JP2007088072A (en) 2005-09-20 2005-09-20 Light-emitting device

Country Status (1)

Country Link
JP (1) JP2007088072A (en)

Similar Documents

Publication Publication Date Title
JP3982561B2 (en) LED lighting device
WO2007034575A1 (en) Light emitting device
JP2007088078A (en) Light-emitting device
JP4029918B2 (en) LED lighting device
JP4442536B2 (en) LED lighting device
JP4820133B2 (en) Light emitting device
JP3941826B2 (en) LED luminaire manufacturing method
JP2007088093A (en) Light-emitting device
JP4925346B2 (en) Light emitting device
JP4483771B2 (en) Light emitting device and manufacturing method thereof
JP4742761B2 (en) Light emitting device
JP4765507B2 (en) Light emitting device
JP2007116124A (en) Light emitting device
JP3952075B2 (en) Light emitting device
JP4829577B2 (en) Light emitting device
JP2007088082A (en) Light-emitting device
JP3963187B2 (en) Light emitting device
JP4742772B2 (en) Light emitting device
JP3963188B2 (en) Light emitting device
JP4820135B2 (en) Light emitting device
JP4483772B2 (en) Light emitting device and manufacturing method thereof
JP2007088075A (en) Light-emitting device
JP2007088095A (en) Light-emitting device
JP2007088072A (en) Light-emitting device
JP4556815B2 (en) Light emitting device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20081202