JP3963188B2 - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP3963188B2
JP3963188B2 JP2005272851A JP2005272851A JP3963188B2 JP 3963188 B2 JP3963188 B2 JP 3963188B2 JP 2005272851 A JP2005272851 A JP 2005272851A JP 2005272851 A JP2005272851 A JP 2005272851A JP 3963188 B2 JP3963188 B2 JP 3963188B2
Authority
JP
Japan
Prior art keywords
led chip
metal plate
light
lens
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005272851A
Other languages
Japanese (ja)
Other versions
JP2007088081A (en
Inventor
策雄 鎌田
恭志 西岡
洋二 浦野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2005272851A priority Critical patent/JP3963188B2/en
Publication of JP2007088081A publication Critical patent/JP2007088081A/en
Application granted granted Critical
Publication of JP3963188B2 publication Critical patent/JP3963188B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、複数個のLEDチップが直接実装された金属ベース板と、金属ベース板に積層され各LEDチップの両電極それぞれがボンディングワイヤを介して接続される配線パターンが形成されたプリント配線板と、金属ベース板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに接続されたボンディングワイヤをエポキシ樹脂やシリコーン樹脂などにより封止した封止部とを備え、封止部をレンズ状の形状とすることで所望の配光特性を得るようにした発光装置が提案されている(例えば、特許文献1)。   Conventionally, a metal base plate on which a plurality of LED chips are directly mounted, and a printed wiring board on which a wiring pattern is formed so that both electrodes of each LED chip are connected to each other via bonding wires. And a sealing part in which the LED chip and a bonding wire connected to the LED chip are sealed with an epoxy resin or a silicone resin on the mounting surface side of the LED chip in the metal base plate, and the sealing part has a lens shape Thus, there has been proposed a light emitting device capable of obtaining a desired light distribution characteristic (for example, Patent Document 1).

また、従来から、結晶成長用基板としてサファイア基板が用いられ青色光ないし紫外光を放射するLEDチップと当該LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体とを組み合わせることにより、白色を含めLEDチップの発光色とは異なる色合いの混色光を得る技術が広く知られている。
特開2003−152225号公報
Conventionally, a sapphire substrate has been used as a crystal growth substrate, and an LED chip that emits blue light or ultraviolet light is excited by light emitted from the LED chip and emits light of a color different from the emission color of the LED chip. A technique for obtaining mixed color light having a hue different from the emission color of the LED chip including white by combining with a radiating phosphor is widely known.
JP 2003-152225 A

しかしながら、上記特許文献1に記載の発光装置では、LEDチップを金属ベース板に直接実装しているので、金属ベース板とLEDチップとの線膨張率差に起因してLEDチップが破損してしまう恐れがあり、また、外力が作用したときに当該外力が封止部を通してLEDチップおよび各ボンディングワイヤに伝達され、LEDチップの発光特性が変動したり各ボンディングワイヤが断線してしまう恐れがあった。   However, in the light emitting device described in Patent Document 1, since the LED chip is directly mounted on the metal base plate, the LED chip is damaged due to the difference in linear expansion coefficient between the metal base plate and the LED chip. In addition, when an external force is applied, the external force is transmitted to the LED chip and each bonding wire through the sealing portion, and there is a fear that the light emission characteristics of the LED chip may fluctuate or each bonding wire may be disconnected. .

本発明は上記事由に鑑みて為されたものであり、その目的は、所望の配光特性を得ることができ且つ信頼性を高めることができる発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device capable of obtaining desired light distribution characteristics and improving reliability.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、リフレクタの内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止した封止部と、封止部およびリフレクタに重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズを覆いレンズの光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、実装基板は、金属板と、金属板側とは反対の表面にLEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともにLEDチップに対応する部位に窓孔が設けられ金属板に積層された絶縁性基材とからなり、LEDチップは、両電極が一表面側に形成されており、当該LEDチップと金属板との間に両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介して金属板に前記一表面が対向する形で実装され、各電極それぞれがサブマウント部材に設けた導体パターンおよびボンディングワイヤを介して互いに異なるリードパターンと接続されてなることを特徴とする。   The invention of claim 1 is an LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip. A reflector formed in a shape in which the opening area gradually increases as the distance from the mounting surface increases, and a pair of LED chips and a pair of electrically connected to the LED chips formed by filling a transparent resin material inside the reflector A sealing portion in which the bonding wire is sealed, a lens arranged on the sealing portion and the reflector, and light emitted from the LED chip to emit light having a color different from that emitted from the LED chip. A molded product made of a phosphor with a transparent material, covering the lens and forming an air layer between the light exit surface of the lens. The mounting substrate is provided with a metal plate and a pair of lead patterns that are electrically connected to both electrodes of the LED chip on the surface opposite to the metal plate side. And an insulating base material provided with a window hole in a portion corresponding to the LED chip and laminated on the metal plate, and the LED chip has both electrodes formed on one surface side, and the LED chip and the metal plate A submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient between them, and that is larger than the chip size of the LED chip and thermally couples the LED chip and the metal plate The one surface is mounted to face the metal plate via a member, and each electrode is different from each other via a conductor pattern and a bonding wire provided on the submount member. Characterized by comprising connected to the lead pattern.

この発明によれば、実装基板におけるLEDチップの実装面側でLEDチップを囲むリフレクタと、封止部およびリフレクタに重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品からなる色変換部材とを備えていることにより、LEDチップから放射された光と蛍光体から放射された光との混色光について所望の配光特性を得ることができ、また、LEDチップと金属板との間に、両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介在させてあるので、前記線膨張率差に起因してLEDチップが破損するのを防止することができ、信頼性を高めることができる。また、色変換部材をレンズの光出射面との間に空気層が形成される形で配設すればよくレンズに密着させる必要がないので、外力が作用したときに色変換部材に発生した応力がレンズおよび封止部を通してLEDチップおよび各ボンディングワイヤに伝達されるのを抑制できるから、LEDチップの発光特性が変動したり各ボンディングワイヤが断線したりするのを抑制でき、より信頼性を高めることができる。また、LEDチップから放射され封止部およびレンズを通して色変換部材に入射し当該色変換部材中の蛍光体の粒子により散乱された光のうちレンズ側へ散乱されてレンズを透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点や、外部雰囲気中の水分が前記LEDチップに到達しにくくなるという利点がある。   According to this invention, the LED chip is excited by the light emitted from the LED chip, the reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate, the lens that is placed on the sealing portion and the reflector, and the LED chip. The light emitted from the LED chip and the light emitted from the phosphor are provided with a color conversion member made of a molded product obtained by molding together with a transparent material a phosphor that emits light of a color different from the emission color of A submount member that can obtain desired light distribution characteristics with respect to mixed color light and relaxes the stress acting on the LED chip due to the difference in linear expansion coefficient between the LED chip and the metal plate However, since the size of the LED chip is larger than the chip size of the LED chip, a submount member that thermally couples the LED chip and the metal plate is interposed. Due to the rate difference can be prevented from LED chip is damaged, it is possible to improve the reliability. In addition, since the color conversion member need only be disposed in a form that forms an air layer between the light emitting surface of the lens and does not need to be in close contact with the lens, the stress generated in the color conversion member when an external force is applied. Can be prevented from being transmitted to the LED chip and each bonding wire through the lens and the sealing portion, so that the emission characteristics of the LED chip can be prevented from changing or the bonding wires can be disconnected, thereby further improving the reliability. be able to. Further, the amount of light emitted from the LED chip and incident on the color conversion member through the sealing portion and the lens and scattered by the phosphor particles in the color conversion member is scattered toward the lens and transmitted through the lens. There is an advantage that the light extraction efficiency to the outside as the whole apparatus can be improved, and that moisture in the external atmosphere hardly reaches the LED chip.

請求項1の発明では、所望の配光特性を得ることができ且つ信頼性を高めることができるという効果がある。   According to the first aspect of the invention, desired light distribution characteristics can be obtained and reliability can be enhanced.

以下、本実施形態の発光装置について図1〜図5を参照しながら説明する。   Hereinafter, the light-emitting device of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲みLEDチップ10から放射された光を反射する枠状のリフレクタ40と、リフレクタ40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50およびリフレクタ40に重ねて配置されるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズ60の光出射面60b側にレンズ60を覆い光出射面60bとの間に空気層80が形成される形で配設されるドーム状の色変換部材70とを備えている。なお、本実施形態の発光装置1は、例えばスポットライトなどの照明器具の光源として用いるものであり、例えばグリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して(なお、図5では、10個の発光装置1を有底円筒状の器具本体100の底壁の内底面において周方向に沿って等間隔で配置した例を示してある)、複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light emitting device 1 of the present embodiment radiates from the LED chip 10, the LED chip 10, the mounting substrate 20 on which the LED chip 10 is mounted, the LED chip 10 on the mounting substrate 20 side of the mounting substrate 20. A frame-like reflector 40 that reflects light, and a transparent resin material filled inside the reflector 40 to seal the LED chip 10 and bonding wires 14 and 14 connected to the LED chip 10 and to provide elasticity. The sealing part 50 having the lens, the lens 60 disposed so as to overlap the sealing part 50 and the reflector 40, and the light emitted from the LED chip 10 to emit light of a color different from the emission color of the LED chip 10. A molded product obtained by molding a fluorescent material together with a transparent material, covering the lens 60 on the light emitting surface 60b side of the lens 60, and the light emitting surface 60 And a color conversion member 70 domed disposed in the form of an air layer 80 is formed between the. The light-emitting device 1 of the present embodiment is used as a light source of a lighting fixture such as a spotlight, for example, and has a metal (for example, Al, Cu or the like having a thermal conductivity through an insulating layer 90 made of a green sheet, for example. By mounting on the device body 100 made of a high metal), the thermal resistance from the LED chip 10 to the device body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. Therefore, the input power can be increased and the optical output can be increased. Here, in the case of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so as to obtain a desired light output (in FIG. 5, ten light emitting devices 1 are bottomed). An example is shown in which the inner bottom surface of the bottom wall of the cylindrical instrument body 100 is arranged at equal intervals along the circumferential direction), and a plurality of light emitting devices 1 may be connected in series or in parallel.

実装基板20は、LEDチップ10が搭載される金属板21と、金属板21に積層されたガラスエポキシ基板からなる絶縁性基材22とで構成されており、当該絶縁性基材22における金属板21側とは反対側の表面にLEDチップ10の図示しない両電極それぞれと電気的に接続される一対のリードパターン23が設けられるとともに、絶縁性基材22においてLEDチップ10に対応する部位に窓孔24が設けられており、LEDチップ10で発生した熱が絶縁性基材22を介さずに金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuを採用しているが、熱伝導率の比較的高い金属材料であればよく、Cuに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、色変換部材70により覆われていない部位がアウターリード部23bとなっている。また、絶縁性基材22は、窓孔24の周囲に、LEDチップ10から放射された光を反射する反射膜27が形成されている。ここで、反射膜27は、Ni膜とAg膜との積層膜により構成されている。   The mounting substrate 20 includes a metal plate 21 on which the LED chip 10 is mounted, and an insulating base material 22 made of a glass epoxy substrate laminated on the metal plate 21, and the metal plate in the insulating base material 22. A pair of lead patterns 23 that are electrically connected to both electrodes (not shown) of the LED chip 10 are provided on the surface opposite to the 21 side, and a window is formed at a portion corresponding to the LED chip 10 in the insulating substrate 22. A hole 24 is provided so that heat generated in the LED chip 10 can be transferred to the metal plate 21 without passing through the insulating base material 22. Here, Cu is employed as the material of the metal plate 21, but any metal material having a relatively high thermal conductivity may be used, and not only Cu but Al or the like may be employed. In addition, the metal plate 21 and the insulating base material 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and a portion not covered with the color conversion member 70 is an outer lead portion 23b. Further, the insulating base material 22 is formed with a reflection film 27 that reflects light emitted from the LED chip 10 around the window hole 24. Here, the reflection film 27 is formed of a laminated film of a Ni film and an Ag film.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、サファイア基板からなる結晶成長用基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長されている。また、LEDチップ10は、一表面側に図示しないカソード側の電極であるカソード電極(n電極)および図示しないアノード側の電極であるアノード電極(p電極)が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が結晶成長用基板11よりも金属板21に近い側となる形で金属板21に実装されている(つまり、フェースダウンで実装されている)。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is formed of a GaN-based compound semiconductor material on the main surface side of a crystal growth substrate 11 made of a sapphire substrate and has, for example, a laminated structure having a double hetero structure. The light emitting portion 12 composed of a portion is grown by an epitaxial growth method (for example, MOVPE method). Further, the LED chip 10 has a cathode electrode (n electrode) which is a cathode side electrode (not shown) and an anode electrode (p electrode) which is an anode side electrode (not shown) formed on one surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting portion 12 of the LED chip 10 is mounted on the metal plate 21 in a form closer to the metal plate 21 than the crystal growth substrate 11 (that is, mounted face-down). ).

また、LEDチップ10は、上述の金属板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と金属板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を金属板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、サブマウント部材30におけるLEDチップ10の実装面側には、LEDチップ10の上記カソード電極および上記アノード電極それぞれが金属材料(例えば、金、半田など)からなるバンプ13,13を介して電気的に接続される導体パターン(図示せず)が設けられている。要するに、LEDチップ10は、上記カソード電極および上記アノード電極それぞれがバンプ13および上記導体パターンおよび金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して互いに異なるリードパターン23と電気的に接続されている。なお、上記アノード電極および上記カソード電極それぞれと上記導体パターンとの間に介在するバンプ13の数は特に限定するものではないが、バンプ13の数が多いほどLEDチップ10と金属板21との間の熱抵抗を低減できて放熱性を高めることができる。また、サブマウント部材30は、LEDチップ10の実装部位の周囲に、LEDチップ10から放射された光を反射する反射膜(例えば、Ni膜とAg膜との積層膜)が形成されている。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is adopted as the material of the submount member 30, and the LED chip 10 mounting surface side of the submount member 30 is provided on the mounting surface side of the LED chip 10. A conductor pattern (not shown) is provided in which the cathode electrode and the anode electrode are electrically connected through bumps 13 and 13 made of a metal material (for example, gold, solder, etc.). In short, the LED chip 10 is electrically connected to lead patterns 23 different from each other via bonding wires 14 in which the cathode electrode and the anode electrode are each composed of a bump 13 and the conductor pattern and a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.). Connected. The number of bumps 13 interposed between each of the anode electrode and the cathode electrode and the conductor pattern is not particularly limited. However, the larger the number of bumps 13, the greater the distance between the LED chip 10 and the metal plate 21. Therefore, the heat resistance can be reduced. In addition, the submount member 30 is formed with a reflective film (for example, a laminated film of a Ni film and an Ag film) that reflects light emitted from the LED chip 10 around the mounting portion of the LED chip 10.

サブマウント部材30の材料はAlNに限らず、線膨張率が結晶成長用基板11の材料であるサファイアに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and may be any material that has a linear expansion coefficient that is relatively close to that of sapphire that is the material of the crystal growth substrate 11 and a relatively high thermal conductivity. For example, composite SiC, Si Etc. may be adopted.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いており、封止部50がゲル状であって弾性を有している。なお、封止部50の透明樹脂材料としては、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   A silicone resin is used as the transparent resin material of the sealing portion 50 described above, and the sealing portion 50 is gel-like and has elasticity. In addition, as a transparent resin material of the sealing part 50, you may use not only a silicone resin but an acrylic resin.

リフレクタ40は、円形状に開口した枠状の形状であって、LEDチップ10の側面から放射された光がレンズ60側へ反射されるように内側面40aの形状が設計されている。すなわち、リフレクタ40は、LEDチップ10の厚み方向においてLEDチップ10から離れるに従って開口面積が大きくなる形状(つまり、上記実装面から離れるにつれて開口面積が徐々に大きくなる形状)に形成されている。ここにおいて、リフレクタ40の材料としては、LEDチップ10から放射される光(ここでは、青色光)に対する反射率が比較的大きな材料(例えば、Alなど)を採用し、リフレクタ40の内側面40aを鏡面とすればよく、リフレクタ40は例えばアルミニウムの基材を絞り加工して形成すればよい。また、リフレクタ40は、絶縁性を有するシート状の接着フィルムからなる固着材26により実装基板20に固着されている。なお、本実施形態では、リフレクタ40を実装基板20に固着した後でリフレクタ40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成してある。   The reflector 40 has a frame shape opened in a circular shape, and the shape of the inner side surface 40a is designed so that light emitted from the side surface of the LED chip 10 is reflected toward the lens 60 side. That is, the reflector 40 is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10 (that is, the shape in which the opening area gradually increases as the distance from the mounting surface increases). Here, as the material of the reflector 40, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) is adopted, and the inner side surface 40a of the reflector 40 is used. What is necessary is just to make it a mirror surface, and the reflector 40 should just be formed, for example by drawing an aluminum base material. In addition, the reflector 40 is fixed to the mounting substrate 20 with a fixing material 26 made of an insulating sheet-like adhesive film. In the present embodiment, after the reflector 40 is fixed to the mounting substrate 20, the sealing portion 50 is formed by filling (potting) the transparent resin material inside the reflector 40 and thermosetting it.

レンズ60は、封止部50側の光入射面60aが平面状に形成されるとともに光出射面60bが凸曲面状に形成された凸レンズにより構成されている。ここにおいて、レンズ60は、シリコーン樹脂の成形品により構成してあり、封止部50と屈折率が同じ値となっているが、レンズ60は、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The lens 60 is configured by a convex lens in which the light incident surface 60a on the sealing portion 50 side is formed in a flat shape and the light emitting surface 60b is formed in a convex curved surface shape. Here, the lens 60 is formed of a molded product of silicone resin, and the refractive index is the same as that of the sealing portion 50. However, the lens 60 is not limited to the molded product of silicone resin. You may comprise by the molded article of resin.

ところで、レンズ60とリフレクタ40とは互いの光軸が一致し且つ各光軸がLEDチップ10を通るように配置されており、レンズ60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。ここで、レンズ60は、光出射面60bが球面の一部により形成されており、当該球面の中心がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。したがって、LEDチップ10から放射された光(LEDチップ10から放射されリフレクタ40に反射されることなくレンズ60の光入射面60aに入射された光およびLEDチップ10から放射されリフレクタ40の内側面40aで反射されてレンズ60の光入射面60aに入射した光)が光出射面60bと空気層80との境界で全反射されることなく色変換部材70まで到達しやすくなり、全光束を高めることができる。   Incidentally, the lens 60 and the reflector 40 are arranged so that their optical axes coincide with each other and each optical axis passes through the LED chip 10, and the lens 60 has a light emitting surface 60b incident from the light incident surface 60a. It is formed in a convex curved surface shape that does not totally reflect light at the boundary between the light emitting surface 60b and the air layer 80 described above. Here, the lens 60 is formed such that the light emitting surface 60 b is formed by a part of a spherical surface, and the center of the spherical surface is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. Yes. Therefore, the light emitted from the LED chip 10 (the light emitted from the LED chip 10 and incident on the light incident surface 60a of the lens 60 without being reflected by the reflector 40, and the inner surface 40a of the reflector 40 emitted from the LED chip 10). The light that has been reflected by the light and incident on the light incident surface 60a of the lens 60 is not easily totally reflected at the boundary between the light emitting surface 60b and the air layer 80, and can easily reach the color conversion member 70, thereby increasing the total luminous flux. Can do.

色変換部材70は、シリコーン樹脂のような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁をリフレクタ40に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the reflector 40 at the periphery of the opening using, for example, an adhesive (for example, silicone resin, epoxy resin).

ところで、上述のリフレクタ40は、実装基板20側とは反対の表面の周部に、色変換部材70を囲み色変換部材70を位置決めする環状の位置決めリブ41が連続一体に突設されている。しかして、本実施形態では、リフレクタ40に対して色変換部材70を高精度に位置決めすることができる。   By the way, in the reflector 40 described above, an annular positioning rib 41 that surrounds the color conversion member 70 and positions the color conversion member 70 is continuously and integrally provided on the periphery of the surface opposite to the mounting substrate 20 side. Therefore, in this embodiment, the color conversion member 70 can be positioned with high accuracy with respect to the reflector 40.

以上説明した本実施形態の発光装置1では、実装基板20におけるLEDチップ10の上記実装面側でLEDチップ10を囲むリフレクタ40と、封止部50およびリフレクタ40に重ねて配置されたレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体をシリコーン樹脂のような透明材料とともに成形した成形品からなる色変換部材70とを備えているので、LEDチップ10から放射された光と蛍光体から放射された光との混色光について所望の配光特性を得ることができる。   In the light emitting device 1 of the present embodiment described above, the reflector 40 surrounding the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and the lens 60 disposed so as to overlap the sealing portion 50 and the reflector 40. A color conversion member 70 made of a molded product obtained by molding a phosphor that is excited by light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10 together with a transparent material such as a silicone resin; Therefore, it is possible to obtain a desired light distribution characteristic for the mixed color light of the light emitted from the LED chip 10 and the light emitted from the phosphor.

また、本実施形態の発光装置1では、LEDチップ10と実装基板20の金属板21との間に、両者の線膨張率差に起因してLEDチップ10に働く応力を緩和するサブマウント部材であってLEDチップ10のチップサイズよりもサイズが大きくLEDチップ10と金属板21とを熱結合させるサブマウント部材30を介在させてあるので、上記線膨張率差に起因してLEDチップ10が破損するのを防止することができ、信頼性を高めることができる。   Further, in the light emitting device 1 of the present embodiment, a submount member that relaxes stress acting on the LED chip 10 due to the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21 of the mounting substrate 20. Since the submount member 30 that is larger than the chip size of the LED chip 10 and thermally couples the LED chip 10 and the metal plate 21 is interposed, the LED chip 10 is damaged due to the difference in linear expansion coefficient. Can be prevented, and reliability can be improved.

また、本実施形態の発光装置1では、色変換部材70をレンズ60の光出射面60bとの間に空気層80が形成される形で配設すればよくレンズ60に密着させる必要がないので、色変換部材70へ外力が作用したときに色変換部材70に発生した応力がレンズ60および封止部50を通してLEDチップ10および各ボンディングワイヤ14,14に伝達されるのを抑制できるから、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14,14の断線が起こりにくくなり、信頼性が向上する。また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点がある。   Further, in the light emitting device 1 of the present embodiment, the color conversion member 70 may be disposed in a form in which the air layer 80 is formed between the light emitting surface 60 b of the lens 60, and it is not necessary to closely contact the lens 60. The stress generated in the color conversion member 70 when an external force is applied to the color conversion member 70 can be suppressed from being transmitted to the LED chip 10 and the bonding wires 14 and 14 through the lens 60 and the sealing portion 50. Variations in the light emission characteristics of the LED chip 10 due to external force and disconnection of the bonding wires 14 and 14 are less likely to occur, and reliability is improved. In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, there is an advantage that moisture in the external atmosphere hardly reaches the LED chip 10.

また、本実施形態の発光装置1では、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、LEDチップ10から放射され封止部50およびレンズ60を通して色変換部材70に入射し当該色変換部材70中の黄色蛍光体の粒子により散乱された光のうちレンズ60側へ散乱されてレンズ60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   Further, in the light emitting device 1 of the present embodiment, the air layer 80 is formed between the color conversion member 70 and the lens 60, so that the color conversion is performed from the LED chip 10 through the sealing portion 50 and the lens 60. Of the light incident on the member 70 and scattered by the yellow phosphor particles in the color conversion member 70, the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, so that the entire apparatus can be transmitted to the outside. There is an advantage that the light extraction efficiency can be improved.

ここで、図6(a),(b)に示すように、色変換部材70の光軸とLEDチップ10の光軸とが一致しており、色変換部材70における光軸方向の中央の位置PでLEDチップ10からの青色光が全方位に散乱されたとし、色変換部材70と空気層80との界面での全反射角をφa、色変換部材70と当該色変換部材70の外側の媒質である空気との界面での全反射角をφb、位置Pで散乱された光に関して色変換部材70の内面70a側のエスケープコーンECaの広がり角を2θa、位置Pで散乱された光に関して色変換部材70の外面70b側のエスケープコーンECbの広がり角を2θbとすれば、図6(a)に示すように全反射角φa,φbが40°のときには2θa=60°、2θb=98°となり、図6(b)に示すように全反射角φa,φbが50°のときには2θa=76°、2θb=134°となる。   Here, as shown in FIGS. 6A and 6B, the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 coincide with each other, and the central position of the color conversion member 70 in the optical axis direction. It is assumed that the blue light from the LED chip 10 is scattered in all directions by P, the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is φa, and the color conversion member 70 and the outside of the color conversion member 70 are outside. The total reflection angle at the interface with air, which is the medium, is φb, and the light scattered at the position P is 2θa, the spread angle of the escape cone ECa on the inner surface 70a side of the color conversion member 70, and the color is scattered with respect to the light scattered at the position P. If the spread angle of the escape cone ECb on the outer surface 70b side of the conversion member 70 is 2θb, as shown in FIG. 6A, when the total reflection angles φa and φb are 40 °, 2θa = 60 ° and 2θb = 98 °. As shown in FIG. 6B, the total reflection angle When φa and φb are 50 °, 2θa = 76 ° and 2θb = 134 °.

ここにおいて、色変換部材70に用いている透明材料の屈折率をn、位置Pで散乱され内面70a側のエスケープコーンECaを通して放出される青色光の最大放出効率をηとすれば、η=(1/4n2)×100〔%〕で表されるので、上述のように透明材料としてシリコーン樹脂を用いている場合には、n=1.4として、η≒13%となる。したがって、色変換部材70とレンズ60との間に空気層80が形成されていない場合には、位置Pで散乱された青色光の50%がレンズ60に戻ってしまうのに対して、空気層80を形成したことにより、位置Pで散乱された青色光の13%しかレンズ60に戻らなくなるので、青色光による封止部50の劣化を抑制できる。なお、エスケープコーンECaを通して放出される青色光を少なくするには、色変換部材70の厚みを大きくすることが望ましい。 Here, if the refractive index of the transparent material used for the color conversion member 70 is n and the maximum emission efficiency of blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a is η, η = ( ¼n 2 ) × 100 [%], so that when silicone resin is used as the transparent material as described above, η≈13% when n = 1.4. Therefore, when the air layer 80 is not formed between the color conversion member 70 and the lens 60, 50% of the blue light scattered at the position P returns to the lens 60, whereas the air layer Since 80 is formed, only 13% of the blue light scattered at the position P returns to the lens 60, so that deterioration of the sealing portion 50 due to the blue light can be suppressed. In order to reduce the blue light emitted through the escape cone ECa, it is desirable to increase the thickness of the color conversion member 70.

ところで、上述の実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、結晶成長用基板11としてサファイア基板を採用しているが、サファイア基板に限らず、SiC基板、GaN基板などを用いてもよい。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、結晶成長用基板11もサファイア基板に限らず、発光部12の材料に応じて、例えば、SiC基板、GaN基板、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in the above-mentioned embodiment, the blue LED chip whose emission color is blue is adopted as the LED chip 10, and the sapphire substrate is adopted as the substrate 11 for crystal growth. A GaN substrate or the like may be used. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. The crystal growth substrate 11 is not limited to the sapphire substrate, and may be appropriately selected from, for example, a SiC substrate, a GaN substrate, a GaAs substrate, and a GsP substrate according to the material of the light emitting unit 12.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 同上における絶縁性基材を示し、(a)は概略平面図、(b)は概略断面図である。The insulating base material same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view. 同上を用いた照明器具を示し、(a)は要部概略平面図、(b)は要部概略断面図である。The lighting fixture using the same is shown, (a) is a principal part schematic plan view, (b) is a principal part schematic sectional drawing. 同上の要部説明図である。It is principal part explanatory drawing same as the above.

符号の説明Explanation of symbols

10 LEDチップ
13 バンプ
14 ボンディングワイヤ
20 実装基板
21 金属板
22 絶縁性基材
23 リードパターン
24 窓孔
30 サブマウント部材
40 リフレクタ
50 封止部
60 レンズ
60a 光入射面
60b 光出射面
70 色変換部材
80 空気層
DESCRIPTION OF SYMBOLS 10 LED chip 13 Bump 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating base material 23 Lead pattern 24 Window hole 30 Submount member 40 Reflector 50 Sealing part 60 Lens 60a Light incident surface 60b Light output surface 70 Color conversion member 80 Air layer

Claims (1)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップを囲みLEDチップから放射された光を反射するリフレクタであって前記実装面から離れるにつれて開口面積が徐々に大きくなる形状に形成されたリフレクタと、リフレクタの内側に透明樹脂材料を充填して形成されてLEDチップおよび当該LEDチップに電気的に接続された一対のボンディングワイヤを封止した封止部と、封止部およびリフレクタに重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズを覆いレンズの光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、実装基板は、金属板と、金属板側とは反対の表面にLEDチップの両電極それぞれと電気的に接続される一対のリードパターンが設けられるとともにLEDチップに対応する部位に窓孔が設けられ金属板に積層された絶縁性基材とからなり、LEDチップは、両電極が一表面側に形成されており、当該LEDチップと金属板との間に両者の線膨張率差に起因して当該LEDチップに働く応力を緩和するサブマウント部材であってLEDチップのチップサイズよりもサイズが大きくLEDチップと金属板とを熱結合させるサブマウント部材を介して金属板に前記一表面が対向する形で実装され、各電極それぞれがサブマウント部材に設けた導体パターンおよびボンディングワイヤを介して互いに異なるリードパターンと接続されてなることを特徴とする発光装置。   An LED chip, a mounting substrate on which the LED chip is mounted, and a reflector that surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate and reflects light emitted from the LED chip, and opens as the distance from the mounting surface increases A reflector formed in a shape that gradually increases in area, and a sealed LED chip and a pair of bonding wires that are formed by filling a transparent resin material inside the reflector and electrically connected to the LED chip. Molded together with a transparent material, a stop portion, a lens placed on the sealing portion and the reflector, and a phosphor that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip Shaped dome that covers the lens and is arranged in the form of an air layer between the lens and the light exit surface The mounting board includes a metal plate and a pair of lead patterns that are electrically connected to both electrodes of the LED chip on the surface opposite to the metal plate side, and corresponds to the LED chip. The LED chip comprises an insulating base material provided with a window hole in a part and laminated on a metal plate, and both electrodes are formed on one surface side, and both wires are connected between the LED chip and the metal plate. Metal plate through a submount member that relieves stress acting on the LED chip due to a difference in expansion coefficient and is larger than the chip size of the LED chip and thermally couples the LED chip and the metal plate Are mounted with the one surface facing each other, and each electrode has a conductor pattern provided on the submount member and a lead pattern different from each other through a bonding wire. The light emitting device characterized by comprising been continued.
JP2005272851A 2005-09-20 2005-09-20 Light emitting device Active JP3963188B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005272851A JP3963188B2 (en) 2005-09-20 2005-09-20 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005272851A JP3963188B2 (en) 2005-09-20 2005-09-20 Light emitting device

Publications (2)

Publication Number Publication Date
JP2007088081A JP2007088081A (en) 2007-04-05
JP3963188B2 true JP3963188B2 (en) 2007-08-22

Family

ID=37974792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005272851A Active JP3963188B2 (en) 2005-09-20 2005-09-20 Light emitting device

Country Status (1)

Country Link
JP (1) JP3963188B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6048880B2 (en) * 2013-01-25 2016-12-21 パナソニックIpマネジメント株式会社 LIGHT EMITTING ELEMENT PACKAGE AND LIGHT EMITTING DEVICE USING THE SAME

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63293584A (en) * 1987-05-27 1988-11-30 岩崎電気株式会社 Light emitting display body
JPH04275482A (en) * 1991-03-04 1992-10-01 Fujitsu Ltd Mount for semiconductor device
JP3434658B2 (en) * 1997-01-14 2003-08-11 サンケン電気株式会社 Semiconductor light emitting device
JP4296644B2 (en) * 1999-01-29 2009-07-15 豊田合成株式会社 Light emitting diode
JP4432275B2 (en) * 2000-07-13 2010-03-17 パナソニック電工株式会社 Light source device
JP2003023183A (en) * 2001-07-06 2003-01-24 Stanley Electric Co Ltd Surface mounting led lamp
JP2003110146A (en) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd Light-emitting device
EP2262006A3 (en) * 2003-02-26 2012-03-21 Cree, Inc. Composite white light source and method for fabricating
JP4192742B2 (en) * 2003-09-30 2008-12-10 豊田合成株式会社 Light emitting device
JP2005136224A (en) * 2003-10-30 2005-05-26 Asahi Kasei Electronics Co Ltd Light-emitting diode illumination module

Also Published As

Publication number Publication date
JP2007088081A (en) 2007-04-05

Similar Documents

Publication Publication Date Title
US8278678B2 (en) Light emitting device
WO2007034575A1 (en) Light emitting device
JP2007165840A (en) Light-emitting device
JP4442536B2 (en) LED lighting device
JP4820133B2 (en) Light emitting device
JP3941826B2 (en) LED luminaire manufacturing method
JP4293216B2 (en) Light emitting device
JP2007088093A (en) Light-emitting device
JP4925346B2 (en) Light emitting device
JP2007088082A (en) Light-emitting device
JP4742761B2 (en) Light emitting device
JP3918871B2 (en) Light emitting device
JP4765507B2 (en) Light emitting device
JP5155539B2 (en) Light emitting device
JP3963188B2 (en) Light emitting device
JP3952075B2 (en) Light emitting device
JP4820135B2 (en) Light emitting device
JP4678392B2 (en) Light emitting device and manufacturing method thereof
JP3963187B2 (en) Light emitting device
JP2007088095A (en) Light-emitting device
JP4556815B2 (en) Light emitting device
JP2007088075A (en) Light-emitting device
JP2007088094A (en) Light-emitting device
JP3948483B2 (en) Light emitting device
JP2007088073A (en) Light-emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070215

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20070220

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20070412

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070501

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070514

R151 Written notification of patent or utility model registration

Ref document number: 3963188

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100601

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100601

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100601

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110601

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120601

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120601

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130601

Year of fee payment: 6