JP7046493B2 - Manufacturing method of semiconductor light emitting device and semiconductor light emitting device - Google Patents

Description

The present invention relates to a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device, which converts light emitted from a light emitting element by a wavelength conversion member and irradiates light having a desired wavelength.

A semiconductor light emitting device is known in which a part of light from a light emitting element is converted into light having a desired wavelength by a wavelength conversion member and emitted. As an example of such a semiconductor light emitting device, for example, Patent Document 1 describes a light emitting device including a light emitting element, a light conversion member for wavelength-converting light from the light emitting element, and a coating member including a light-reflecting material. It has been disclosed. In the light emitting device of Patent Document 1, the light conversion member has a light emitting surface exposed to the outside and a side surface continuous from the light emitting surface, and the covering member covers the side surface of the light conversion member, so that only the light emitting surface is substantially used. Is used as a light emitting region in the light emitting device to improve the front brightness. Further, in Patent Document 2, the wavelength conversion member and the translucent member are sequentially arranged on the upper surface of the light emitting element provided on the substrate via the conductive member, and from the side surface of the light emitting element to the lower surface of the peripheral edge of the wavelength conversion member. Disclosed is a semiconductor light emitting device in which a side light guide member is provided, and at least a wavelength conversion member, a translucent member, and a light reflection member are arranged on the side surfaces of the side light guide member.

Japanese Patent No. 5526782 Japanese Unexamined Patent Publication No. 2016-72515

However, conventional semiconductor light emitting devices such as the semiconductor light emitting devices disclosed in Patent Documents 1 and 2 described above have a light emitting element mounted on a mounting substrate, a light conversion member on the light emitting device, and light reflectivity on the side surface. Manufactured by sequentially mounting members. Therefore, there is a risk that the mounting position will shift during manufacturing, especially when mounting the optical conversion member or the like. If the mounting position of the light conversion member or the like is displaced, the light emitted from the semiconductor light emitting device is biased and the chromaticity varies. Semiconductor light emitting devices with varying chromaticity are ranked according to the target chromaticity by the inspection device, but semiconductor light emitting devices that do not meet the target chromaticity cannot be shipped, and the manufacturing yield decreases. Resulting in.

The present invention has been made in view of the above circumstances, and by improving the mounting accuracy of the optical conversion member, it is possible to suppress the bias of the emitted light and the variation in the chromaticity, and to improve the manufacturing yield. With the goal.

One aspect of the present invention is a light emitting element, a back surface electrode provided on the lower surface of the light emitting element, a first phosphor layer provided on the upper surface of the light emitting element, the light emitting element, and the first fluorescence. Provided is a semiconductor light emitting device including a light control member that covers a side surface of a body layer, and the lower surface of the light emitting element and at least the lower surface of the back surface electrode are exposed without being covered by the light control member.
The semiconductor light emitting device configured in this way is manufactured as follows.
Using a mold release tool having a rectangular recess, a first phosphor layer is fitted on the bottom surface of the mold release tool, and the upper surface of the light emitting element and the first phosphor are placed on the first phosphor layer. The light emitting element is mounted so as to be in contact with the layer, the first phosphor layer and the light emitting element are joined, and a light control member is provided on the recess, the side surface of the first phosphor layer, and the light emitting. It is applied and formed between the side surface of the element and the recess and cured.
Since the semiconductor light emitting device manufactured in this manner can suppress the mounting position shift when mounting the light conversion member, it is possible to suppress the bias of the emitted light and the variation in the chromaticity, and eventually the manufacturing yield. Can be improved.

According to the present invention, by improving the mounting accuracy of the light conversion member, it is possible to suppress the bias of the emitted light and the variation in the chromaticity, and it is possible to improve the manufacturing yield.

It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on the modification of 1st Embodiment of this invention. It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on the modification of 1st Embodiment of this invention. It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on 2nd Embodiment of this invention. (A)-(f) are sectional views which show the process which concerns on the manufacturing method of the semiconductor light emitting device which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on the modification 1 of the 2nd Embodiment of this invention. (A) to (d) are cross-sectional views showing a process in the case of mounting the semiconductor light emitting device according to the first modification of the second embodiment of the present invention. It is sectional drawing which shows the schematic structure of the semiconductor light emitting device which concerns on the modification 2 of the 2nd Embodiment of this invention. (A)-(f) are sectional views showing the process which concerns on the manufacturing method of the semiconductor light emitting apparatus which concerns on modification 2 of the 2nd Embodiment of this invention. (A) and (b) are sectional views explaining a modified example of the manufacturing method of the semiconductor light emitting device which concerns on each embodiment of this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings shown below, hatching is appropriately omitted even in the cross-sectional view for easy understanding and improvement of visibility. In the following description, the same components are designated by the same reference numerals, and the description thereof will be omitted.

(First Embodiment)
The semiconductor light emitting device according to the first embodiment of the present invention will be described.
As shown in FIG. 1, in the semiconductor light emitting device 10 according to the present embodiment, the light emitting element 11 provided with the back surface electrode 11b, the first phosphor layer 12 provided on the upper surface of the light emitting element 11, and the first fluorescence. A light transmissive substrate 13 provided on the upper surface of the body layer, a second phosphor layer 14 covering the side surfaces of the light emitting element 11 and the first phosphor layer 12, and a light reflecting member (light) covering the second phosphor layer. The control member) 15 and the like are provided.

As the light emitting element 11, a flip-chip type semiconductor light emitting element having a light emitting surface for emitting light from the light emitting layer 11a on the upper surface and the side surface is applied. The pair of element electrodes (back surface electrodes) 11b formed on the lower surface of the light emitting element 11 are not covered with the light reflecting member 14, and all but the portion in contact with the back surface of the light emitting element 11 is exposed to the outside. ing.

The first phosphor layer 12 is arranged on the upper surface of the light emitting element 11 and has the same size as the light emitting element 11. The light transmissive substrate 13 has a rectangular shape slightly larger than that of the first phosphor layer 12, and is arranged on the upper surface of the first phosphor layer. The second phosphor layer 14 is provided so as to cover the side surfaces of the light emitting element 11 and the first phosphor layer 12, and the peripheral edge portion exposed from the first phosphor layer 12 on the lower surface of the light transmissive substrate 13. ing. The side surface of the second phosphor layer 14 is an inclined surface connecting the side surface of the light emitting element 11 and the lower end of the side surface of the light transmissive substrate 13. The light reflecting member 15 is provided so as to cover the side surface of the light transmissive substrate 13 and the side surface of the second phosphor layer 14.

As shown in FIG. 2, the structure may be such that the light reflecting member 15 is not provided. With such a structure, side light can also be used, so that the spread of light emission becomes large, and the lighting efficiency can be improved by mounting the substrate on a white substrate. The semiconductor light emitting device as shown in FIG. 2 is mainly suitable for general lighting, a Chip On Board (COB) light source, an LED bulb, and the like. Further, when mounting the semiconductor light emitting device, it is possible to mount it in close proximity, so that the dark lines in the gaps can be made inconspicuous.
Further, as shown in FIG. 3, the structure may be such that the light transmissive substrate 13 and the second phosphor layer 14 are not provided. With such a structure, the light source size can be made close to the size of the light emitting element (chip size package: CSP), and the front luminance of the semiconductor light emitting device can be improved. The semiconductor light emitting device having improved front luminance can be applied to, for example, a headlamp, a DRL, or the like.

(Second embodiment)
As shown in FIG. 4, in the semiconductor light emitting device according to the second embodiment, a plurality of via electrodes penetrating the light emitting layer 11a are arranged (not shown) on the light emitting element 11 to emit light from the light emitting layer 11a. A flip-chip type semiconductor light emitting device having light emitting surfaces to be generated on the upper surface and the side surface is applied. By applying such a semiconductor light emitting element, the non-light emitting portion is small, the current diffusion efficiency is good, and the back surface electrode pattern is stepped as compared with the case where the flip chip type light emitting element in the first embodiment is applied. Can be arranged symmetrically. Therefore, the Au bump joining method is not required, and cheaper mounting such as eutectic joining is possible. Further, since the step of the PN junction is smaller than that of the semiconductor light emitting device according to the first embodiment, the second phosphor layer 14 can be arranged with higher accuracy.

On the upper surface of the light emitting element 11, a first phosphor layer 12 having the same size as the light emitting element 11 and a rectangular light transmitting substrate 13 slightly larger than the first phosphor layer 12 are arranged in order to emit light. The second phosphor layer 14 is provided so as to cover the peripheral portion exposed from the first phosphor layer 12 on the side surface of the element 11 and the first phosphor layer 12 and the lower surface of the light transmissive substrate 13. Further, a light reflecting member (light control member) 15 is provided so as to cover the side surface of the light transmissive substrate 13 and the side surface of the second phosphor layer 14.

Next, a method of manufacturing the semiconductor light emitting device 10 shown in FIG. 4 configured in this way will be described.
In the conventional manufacturing process of a semiconductor light emitting device, it is general that a wavelength conversion layer (fluorescent body layer) and a light reflecting member are arranged after mounting a light emitting element on a mounting substrate. On the other hand, the semiconductor light emitting device 10 according to the present embodiment is manufactured without mounting the light emitting element on the mounting substrate. Therefore, there is an advantage that the back surface electrode provided on the light emitting element can be exposed.

Hereinafter, a specific manufacturing method will be described with reference to FIG.
FIG. 5A is a cross-sectional view of a mold release jig 20 having a rectangular shape when viewed from the upper surface and having a plurality of first recesses 21 having a size capable of accommodating a semiconductor light emitting device 10. The release jig has a plurality of rectangular first recesses 21 formed in a matrix corresponding to the number of semiconductor light emitting devices, and a light transmissive substrate 13 is formed on the bottom surface of the first recesses 21. A second recess 22 having a size substantially equal to the size and shallower than the thickness of the light transmissive substrate 13 is formed, and a suction hole 23 for vacuum suction is formed in the center of the second recess 22.

As shown in FIG. 5B, a light transmissive substrate 13 that has been previously processed to a predetermined size and a recess in which the first phosphor layer 12 is formed in the center of the light transmissive substrate 13 are formed. It is arranged at the center position of the bottom surface of 21, that is, it is fitted into the second recess 22, and is vacuum-sucked through the suction hole 23.

The first fluorescent material layer 12 can be formed, for example, by thermocompression-bonding a sheet-like material in which a fluorescent material is dispersed in a semi-curable resin to a light-transmitting substrate 13. Since the second recess 22 is formed to have a size substantially equal to that of the light transmissive substrate 13, the light transmissive substrate 13 can be fitted into the second recess 22 when the light transmissive substrate 13 is mounted. Since the misalignment does not occur, it is possible to suppress the misalignment of the first phosphor layer 14 to be stacked with respect to the light transmissive substrate 13.

Next, as shown in FIG. 5C, the light emitting element 11 is mounted on the first phosphor layer 12 with the upper surface (light emitting surface: for example, the sapphire transparent substrate side) facing down, and heat-bonded. By doing so, the members are joined together.
As shown in FIG. 5D, the uncured second phosphor layer 14 has an exposed surface of the light transmissive substrate 13, a side surface of the first phosphor layer 12, and a side surface of the light emitting element 11. By applying it from the gap of the first recess 21 so as to cover it with a dispensing device or the like, it is formed into a fillet-shaped light chain and heat-cured. The second phosphor layer 14 wavelength-converts the light from the side surface of the light emitting element 11 and guides the light to the light transmissive substrate 13 by the inclination due to the fillet shape. The phosphor concentration of the second phosphor layer 14 is adjusted to be lower than the phosphor concentration of the first phosphor layer 12.

In a conventional semiconductor light emitting device, since a phosphor layer and a light transmissive substrate are stacked and sequentially arranged on the upper surface of the light emitting element, the light transmissive substrate larger than the size of the light emitting element interferes with the second phosphor layer. Is difficult to form. On the other hand, according to the method for manufacturing a semiconductor light emitting device according to the present embodiment, the second phosphor layer 14 is applied because the stacking order is reversed, that is, the light-transmitting substrate 13 is stacked. A gap for this can be secured, and the second phosphor layer 14 can be stably formed.

Subsequently, as shown in FIG. 5 (e), a light reflecting member 15, for example, a mixture of silicone resin and titanium oxide is applied and formed in the gap of the first recess 21 by a dispensing device or the like, and is thermally cured. At this time, the depth of the first recess 21 is set to the height at which the back surface electrode 11b provided on the back surface of the light emitting element 11 (upper side in FIG. 5) is exposed from the upper surface of the first recess 21. Therefore, the light reflecting member 15 covers the side surface of the light transmissive substrate 13 and the side surface of the second phosphor layer 14, and controls the liquid level by surface tension to control the height of the liquid surface to control the back surface electrode 11b of the light emitting element 11. The including light emitting element can be exposed from the light reflecting member 15.

Next, as shown in FIG. 5 (f), after the light reflecting member 15 is heat-cured, each semiconductor light emitting device is removed from the mold release jig. At this time, the semiconductor light emitting device can be easily released from the mold by pushing it up with a push-up pin from the suction hole 23 provided in the center of the second recess 22 of the jig. As the mold release tool, for example, a mold with a mold release coating treated, a Teflon (registered trademark) molded product, a heat-resistant thermoplastic resin molded product with a fluorine coating, and the like can be appropriately used.

The plurality of semiconductor light emitting devices released in this way can be mounted on a substrate in a state in which the back surface electrode 11b of the light emitting element 11 is exposed to the outside and completed as a semiconductor light emitting device. That is, it can be downsized as compared with the conventional semiconductor light emitting device, and can be manufactured without using a mounting substrate because it uses a release jig, and it can be manufactured without using a light transmitting substrate or a first phosphor layer. Since the displacement of the mounting position of the (optical conversion member) can be suppressed, the bias of the light emitted by the semiconductor light emitting device and the variation in the chromaticity can be suppressed. Further, since the semiconductor light emitting device is manufactured individually, the dicing process is not required, and the yield can be improved and the cost can be reduced. Further, there is an advantage that the light emitting state of the semiconductor light emitting device can be confirmed through the suction holes 23 in the manufacturing process.

(Modification 1 of the second embodiment)
As shown in FIG. 6, the structure may be such that the light reflecting member 15 is not provided. With such a structure, side light can also be used, so that the spread of light emission becomes large, and the lighting efficiency can be improved by mounting the substrate on a white substrate. Such a semiconductor light emitting device is mainly suitable for general lighting, Chip On Board (COB) light source, LED bulb and the like. Further, when mounting the semiconductor light emitting device, it is possible to mount it in close proximity, so that the dark lines in the gaps can be made inconspicuous.

The semiconductor light emitting device 10 of FIG. 6 without such a light reflecting member (light control member) 15 is a process of FIGS. 5A to 5D, which is a manufacturing process of the semiconductor light emitting device according to the second embodiment. Can be manufactured according to. Hereinafter, an implementation example of such a semiconductor light emitting device of FIG. 6 will be described with reference to FIG. 7.
In FIG. 7A, a circuit board 40 having multi-layer wiring is prepared in advance as a mounting board, and semiconductor light emitting devices are mounted at predetermined intervals on a predetermined electrode pattern on the mounting surface of the circuit board 40.
Since the external size of the semiconductor light emitting device of FIG. 6 is defined by the concave portion of the mold release jig, highly accurate external dimensions can be realized by processing the concave portion pattern with high dimensional accuracy. Therefore, the gap between adjacent semiconductor light emitting devices can be suppressed to 50 μm or less.
Since the external size of the conventional semiconductor light emitting device depends on the dicing process, the gap between the semiconductor light emitting devices cannot be suppressed to 100 μm or less due to the influence of the pitch tolerance and the cutting width tolerance of the dicing device.

Next, as shown in FIG. 7B, a dam frame 41 for pouring the light reflecting member into the gap is applied, formed, and cured by a dispensing device (not shown). A matrix light source unit in which the upper surface of the light transmissive substrate 13 is exposed by filling and curing the light reflecting member 15 (white resin) that fills the inside of the dam frame 41 and the side surface of the semiconductor light emitting device (FIG. 7 (c)). Is obtained (FIG. 7 (d)).

In the example of FIG. 7, an example of a light source unit having a 3 × 3 arrangement is shown, but the number of arrangements is not limited to this, and is appropriately selected according to the optical system to be applied. For example, 1x4-5 arrangement for vehicle headlights (headlamps), 2x2 for daytime running lamps (white DRL), DRL and turn lamp light sources (white and orange). The arrangement can be 3 × 3 (4 white, 5 orange), 5 × 20 in the case of adaptive driving beam (ADB), and the like.
Further, as shown in FIG. 8, the structure may be such that the light transmissive substrate 13 and the second phosphor layer 14 are not provided. With such a structure, the light source size can be made close to the size of the light emitting element (chip size package: CSP), and the front luminance of the semiconductor light emitting device can be improved. The semiconductor light emitting device having improved front luminance can be applied to, for example, a headlamp, a DRL, or the like.

(Modification 2 of the second embodiment)
Hereinafter, a method for manufacturing a semiconductor light emitting device without the light transmissive substrate shown in FIG. 8 will be described with reference to FIG. 9.
FIG. 9A is a cross-sectional view of the mold release jig 20 in which a plurality of first recesses 21 having a rectangular shape and a size that can be accommodated when viewed from the upper surface are formed. The second recess 22 is formed with a second recess 22 having a size substantially equal to the size of the first phosphor layer 12 and shallower than the thickness of the first phosphor layer 12, and the second recess 22 is formed. A suction hole 23 for vacuum suction is formed in the center.

FIG. 9B shows a state in which the phosphor layer is arranged in the second recess 22 formed on the bottom surface of the first recess 21 and is vacuum-sucked through the suction holes 23. As the first phosphor layer 12, for example, a phosphor ceramic plate can be used. A predetermined amount of the adhesive 16 is applied to the upper surface of the first phosphor layer 12 (FIG. 9 (c)). As the adhesive 16, a transparent material having heat resistance and light resistance (for example, silicone resin, fluororesin, solgel inorganic binder, etc.) can be used.

Next, as shown in FIG. 9D, the flip-chip type light emitting element 11 is mounted on the first phosphor layer 12 with the upper surface (sapphire transparent substrate side) facing down, and the adhesive is heat-cured. Let me. A light reflecting member 15 is applied and formed in the gap of the first recess 21, and is thermally cured (FIG. 9 (e)). After the light reflecting member 15 is thermally cured, the individual semiconductor light emitting devices are removed from the mold release jig 20 (FIG. 9 (f)).

Since the semiconductor light emitting device manufactured in this manner does not have the light transmissive substrate 13 and the second phosphor layer 14, it can be further miniaturized. Further, as in the case of the semiconductor light emitting device according to the first embodiment described above, since the mounting substrate is not used, the dicing step is unnecessary, the yield is improved, and the cost is low.

(Modified example of manufacturing method of semiconductor light emitting device)
In the method for manufacturing a semiconductor light emitting device described above, the variation in chromaticity can be further reduced by performing as follows.
FIG. 10A shows a step of selecting the first phosphor layer 12 in each of the above-described embodiments. As shown in FIG. 10 (a), individual chromaticity ranks (in the case of a yellow wavelength conversion layer excited by blue light, from blue to yellow (for example, correlated color temperature)) are used in advance by a chromaticity mapping inspection device (not shown). = 6500K to 4000K))), and the tray 30 is prepared by classifying and accommodating it according to the chromaticity rank.

FIG. 10B shows a step of selecting the light emitting element 11. In FIG. 10B, a tray in which light emitting elements 11 are classified according to dominant wavelengths in advance by a chip sorting device (not shown) is prepared.

In order to adapt to the above-mentioned manufacturing method of the semiconductor light emitting device, the combination of the chromaticity rank of the first phosphor layer 12 and the dominant wavelength rank of the light emitting element 11 depends on the excitation wavelength characteristic of the wavelength conversion member such as a phosphor. Determine the combination. It is known that the chromaticity of the final semiconductor light emitting device manufactured according to this combination falls within the same range, and by managing the number of each classification, the chromaticity yield can be significantly improved.
In the conventional manufacturing process, the limit is to collectively manufacture the dominant wavelengths of the light emitting elements classified in the 2.5 nm range, and to suppress the variation in chromaticity in combination with the variation in the phosphor layer. Was difficult.

The semiconductor light emitting device according to each of the above-described embodiments and modifications thereof is an example, and each configuration applied to the semiconductor light emitting device can be appropriately changed as follows.
As the light control member, in the above example, a light reflection member such as a white reflection member in which titanium oxide is mixed with a silicone resin is shown, but instead of the light reflection member, a light control member such as a light transmissive transparent resin is applied. By doing so, it is possible to provide a semiconductor light emitting device capable of side emission. Further, by applying the third phosphor layer having a wavelength conversion function as the optical control member, it can be applied to the chromaticity adjustment in the final process when manufacturing the semiconductor light emitting device.

Examples of the above-mentioned mold release jig include those in which the mold is mold-release coated, Teflon (registered trademark) molded product, and heat-resistant thermoplastic resin molded product coated with fluororesin. A transparent member (for example, hard glass, transparent silicone resin, transparent fluororesin) can be used. By using the transparent member, after arranging the first phosphor layer 12 or the second phosphor layer 14, the back surface electrode 11b of the light emitting element 11 is made conductive and lit, and the back surface electrode 11b of the light emitting element 11 is made conductive and lit from the transparent lower surface side of the release jig. Since the chromaticity can be adjusted (coating amount control) by measuring the light emission, the target chromaticity can be controlled with higher accuracy. Further, although the example in which the mold release jig has the first recess 21 and the second recess has been described, it is not necessary to form the second recess.

Further, as the light emitting element 11, a flip-chip type element in which a semiconductor layer is grown on a sapphire transparent substrate is shown, but in addition, an anode electrode and a cathode electrode can be arranged from the back surface such as a SiC growth substrate and a GaN growth substrate. A light emitting element can also be applied.

As described above, according to the semiconductor light emitting device according to each of the above-described embodiments and modifications thereof, by improving the mounting accuracy of the light conversion member, the bias of the light to be irradiated and the variation in the chromaticity are suppressed, and the result is extended. The manufacturing yield can be improved. The semiconductor light emitting device according to each of the above-described embodiments and modifications thereof can be applied to vehicle lamps such as DRL and ADB.

10 ... Semiconductor light emitting device, 11 ... Light emitting element, 11a ... Light emitting layer, 11b ... Backside electrode, 12 ... First phosphor layer, 13 ... Light transmitting member, 14 ... second phosphor layer, 15 ... light reflecting member, 16 ... adhesive, 20 ... mold release tool, 21 ... first recess, 22 ... second recess , 23 ... Suction hole, 40 ... Circuit board, 41 ... Dam frame

Claims (7)

Light emitting element and
The back surface electrode provided on the lower surface of the light emitting element and the back surface electrode
A first phosphor layer provided on the upper surface of the light emitting element,
A light-transmitting substrate provided on the upper surface of the first phosphor layer,
A light control member which is a light transmitting member covering the side surface of the light emitting element and the first phosphor layer, and a light control member.
A second phosphor layer provided between the light emitting element and the side surface of the first phosphor layer and the optical control member,
Equipped with
The lower surface of the light emitting element and at least the lower surface of the back surface electrode are exposed without being covered by the optical control member, and are exposed.
A semiconductor light emitting device in which the side surface of the second phosphor layer on the light control member side is an inclined surface connecting the side surface of the light emitting element and the lower end of the side surface of the light transmissive substrate. Light emitting element and
The back surface electrode provided on the lower surface of the light emitting element and the back surface electrode
A first phosphor layer provided on the upper surface of the light emitting element,
A light-transmitting substrate provided on the upper surface of the first phosphor layer,
A light control member that covers the side surface of the light emitting element and the first phosphor layer, and
A second phosphor layer provided between the light emitting element and the side surface of the first phosphor layer and the optical control member,
Equipped with
The lower surface of the light emitting element and at least the lower surface of the back surface electrode are exposed without being covered by the optical control member, and are exposed.
The side surface of the second phosphor layer on the light control member side is an inclined surface connecting the side surface of the light emitting element and the lower end of the side surface of the light transmissive substrate.
A semiconductor light emitting device in which the optical control member is a third phosphor layer. The semiconductor light emitting device according to claim 1 or 2 , wherein a portion of the back surface electrode protruding from the lower surface of the light emitting element is exposed. The semiconductor light emitting device according to any one of claims 1 to 3, wherein the phosphor concentration of the second phosphor layer is lower than the phosphor concentration of the first phosphor layer. Using a mold release jig with a rectangular recess,
A first phosphor layer is fitted on the bottom surface of the mold release jig, and the first phosphor layer is fitted.
The light emitting element is mounted on the first phosphor layer so that the upper surface of the light emitting element and the first phosphor layer are in contact with each other, and the first phosphor layer and the light emitting element are bonded to each other. death,
A method for manufacturing a semiconductor light emitting device in which a light control member is coated and formed between the recess and the side surface of the first phosphor layer and between the side surface of the light emitting element and the recess and cured. Instead of the first fluorescent layer,
The method for manufacturing a semiconductor light emitting device according to claim 5 , wherein a synthetic sheet in which a light transmissive substrate and a first phosphor layer are bonded in advance is fitted. The method for manufacturing a semiconductor light emitting device according to claim 5 or 6 , wherein the first phosphor layer is vacuum-adsorbed from the suction holes provided on the bottom surface of the recess of the mold release jig.

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