JP2007043074A - Luminaire - Google Patents
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- JP2007043074A JP2007043074A JP2006092032A JP2006092032A JP2007043074A JP 2007043074 A JP2007043074 A JP 2007043074A JP 2006092032 A JP2006092032 A JP 2006092032A JP 2006092032 A JP2006092032 A JP 2006092032A JP 2007043074 A JP2007043074 A JP 2007043074A
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- 229920005989 resin Polymers 0.000 claims abstract description 70
- 239000011347 resin Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 238000005286 illumination Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 11
- 230000004907 flux Effects 0.000 description 9
- 238000007789 sealing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000393 Nylon 6/6T Polymers 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
本発明は発光素子を光源とする照明装置に関する。 The present invention relates to an illumination device using a light emitting element as a light source.
従来の発光ダイオード(LED)照明装置の一例としては、LEDチップを配設するケース内に、合成樹脂を充填してLEDチップをケース内に封止する面実装タイプのものが知られている(例えば特許文献1参照)。 As an example of a conventional light emitting diode (LED) illuminating device, a surface mount type device in which a synthetic resin is filled in a case in which an LED chip is disposed and the LED chip is sealed in the case is known ( For example, see Patent Document 1).
そして、この種のLED装置により白色光を発光させる従来例の一例としては、青色発光LEDチップにより発光させた青色光と、黄色発光LEDチップにより発光させた黄色光と、を混合させるもの(以下、第1の従来技術という)が知られている。また、他の従来例としては、青色発光LEDチップの青色光と、この青色発光により黄色発光蛍光体を励起させて得た黄色光とを混色させるもの(以下、第2の従来技術という)が知られている。
しかしながら、第1の従来技術では、青色発光LEDチップと黄色発光LEDチップとの間に距離があるので、青色光と黄色光の混色を均一にすることが難しく、白色光以外の他の色になり易い。また、青色光と黄色光をそれぞれ発光する少なくとも2個のLEDチップを設置するためのスペースが必要であり、これを搭載する機器の大形化を招いている。 However, in the first prior art, since there is a distance between the blue light emitting LED chip and the yellow light emitting LED chip, it is difficult to make the mixed color of blue light and yellow light uniform, and other colors other than white light are used. It is easy to become. Moreover, a space for installing at least two LED chips that respectively emit blue light and yellow light is required, which leads to an increase in the size of equipment on which the chips are mounted.
そして、第2の従来技術では、その封止樹脂外面に対して垂直方向から見た場合、青色発光LEDチップが位置する中央部でほぼ白色光が得られるものの、その周辺部では黄色光が分布し、色むらが発生する。また、このために、封止樹脂外面に対して斜めから見た場合には、主に黄色光が発光しているように見られる。さらに、この封止樹脂外面の中央部においても、この中央部と青色発光LEDチップとの距離の方が、周辺部と青色発光LEDチップとの距離よりも近いので、その分、青色光の輝度が高く、青色光が抜けるので、白色光が青味がかって見えるという不具合もある。 In the second prior art, when viewed from the vertical direction with respect to the outer surface of the sealing resin, almost white light is obtained in the central portion where the blue light emitting LED chip is located, but yellow light is distributed in the peripheral portion. And uneven color occurs. For this reason, when viewed obliquely with respect to the outer surface of the sealing resin, it appears that mainly yellow light is emitted. Further, even at the central portion of the outer surface of the sealing resin, the distance between the central portion and the blue light emitting LED chip is closer than the distance between the peripheral portion and the blue light emitting LED chip. The blue light is lost and the white light appears bluish.
本発明は、発光色の色むらを低減することができる照明装置を提供することを目的とする。 An object of this invention is to provide the illuminating device which can reduce the color nonuniformity of luminescent color.
請求項1の発明は、複数の収容部を有する基板と;各収容部に配設された発光素子と;各収容部に設けられ、前記発光素子を被覆する第1の樹脂層と;第1の樹脂層の粘度よりも低い粘度に形成され、第1の樹脂層の上側に配設される第2の樹脂層と;を具備していることを特徴とする。 The invention of claim 1 includes: a substrate having a plurality of housing portions; a light emitting element disposed in each housing portion; a first resin layer provided in each housing portion and covering the light emitting element; And a second resin layer formed on the upper side of the first resin layer, and having a viscosity lower than that of the resin layer.
基板の材料は、ガラスエポキシ樹脂、アルミニウムまたは窒化アルミニウム等であるが、アルミニウムを含む基板は放熱性がよく、発光素子の温度上昇を抑制して、発光効率低下や素子劣化を抑制する。また、収容部は、基板に直接形成してもよいし、別部材によって基板上に形成してもよい。 The material of the substrate is glass epoxy resin, aluminum, aluminum nitride, or the like, but a substrate containing aluminum has good heat dissipation and suppresses a temperature increase of the light emitting element, thereby suppressing a decrease in luminous efficiency and element deterioration. Further, the accommodating portion may be formed directly on the substrate, or may be formed on the substrate by another member.
請求項2の発明は、基板と;基板に配設された絶縁体と;絶縁体を介して前記基板に配設された回路パターンと;回路パターンを介してマトリクス状に配置される複数の発光素子と;前記基板上に配設され、前記複数の発光素子から放射される光を反射する反射体と;発光素子を被覆する第1の樹脂層と;第1の樹脂層の粘度よりも低い粘度に形成され、第1の樹脂層の上側に配設される第2の樹脂層と;を具備していることを特徴とする。 According to a second aspect of the present invention, there is provided a substrate; an insulator disposed on the substrate; a circuit pattern disposed on the substrate via the insulator; and a plurality of light emitting elements disposed in a matrix via the circuit pattern An element; a reflector disposed on the substrate and reflecting light emitted from the plurality of light emitting elements; a first resin layer covering the light emitting element; and a viscosity lower than that of the first resin layer And a second resin layer formed on the upper side of the first resin layer.
絶縁体は、基板の材料として金属材料を選択した場合に必要だが、ガラスエポキシ樹脂基板の場合には必要ない。回路パターンは、銅パターンで形成され正極と負極との間に複数の発光素子としての例えば発光ダイオードが電気的に接続される。また、発光素子は、前記基板上にマトリクス状に複数配設されて面光源を形成する。 The insulator is necessary when a metal material is selected as the material of the substrate, but is not necessary in the case of a glass epoxy resin substrate. The circuit pattern is formed of a copper pattern, and, for example, light emitting diodes as a plurality of light emitting elements are electrically connected between the positive electrode and the negative electrode. A plurality of light emitting elements are arranged in a matrix on the substrate to form a surface light source.
反射体は、白色樹脂により形成され、発光素子の周囲を取り囲むように反射面を有している。そして、基板上には回路パターンが形成されていることから、反射体と基板との間には、少々の隙間が形成されることがある。発光素子の放射光は当該反射面により反射される。 The reflector is formed of a white resin and has a reflecting surface so as to surround the periphery of the light emitting element. Since a circuit pattern is formed on the substrate, a slight gap may be formed between the reflector and the substrate. The emitted light of the light emitting element is reflected by the reflecting surface.
第1の樹脂層は、製造時には、第2の樹脂層の粘度に比較して高い粘度を有し、ドロドロした状態のものが硬化したものである。したがって、反射体と基板との間には、少々の隙間が形成されることがあっても、隙間に流れ込むことがなく、所定の場所に樹脂量をほぼ一定にすることができる。そうすると、マトリクス上に配設された各発光素子からの光の透過量を一定にすることができ、第2の樹脂層において、光吸収量が一定になるので、色むらなく可視光に変換されるものである。 The first resin layer has a viscosity higher than that of the second resin layer at the time of manufacture, and the one in a muddy state is cured. Therefore, even if a slight gap may be formed between the reflector and the substrate, the amount of resin can be made substantially constant at a predetermined place without flowing into the gap. Then, the amount of light transmitted from each light emitting element arranged on the matrix can be made constant, and the amount of light absorption is made constant in the second resin layer, so that it is converted into visible light without color unevenness. Is.
第2の樹脂層は、蛍光体をシリコーン樹脂等に混入させたものであり、発光素子からの光によって可視光に変換する。第2の樹脂層は、製造時には、第1の樹脂層の粘度に比較して低い粘度を有し、サラサラした状態のものが硬化したものである。したがって、第1の樹脂層の上に均等に満遍なく塗布されるものであり、第2の樹脂層の厚みに変化が無く発光色の色むらを低減できる。 The second resin layer is obtained by mixing a phosphor into a silicone resin or the like, and converts it into visible light by light from the light emitting element. The second resin layer has a viscosity lower than that of the first resin layer at the time of manufacture, and is cured in a smooth state. Therefore, it is applied evenly and uniformly on the first resin layer, and there is no change in the thickness of the second resin layer, and the unevenness of the emission color can be reduced.
さらに、反射体の上に制光体を配設してもよい。制光体はアクリル樹脂等によって成形され、各発光素子に光学設計される。 Furthermore, you may arrange | position a light control body on a reflector. The light control body is formed of an acrylic resin or the like, and is optically designed for each light emitting element.
請求項3の発明は、請求項2記載の照明装置において、第1の樹脂層は拡散剤又は反射剤を含んでいることを特徴とする。 According to a third aspect of the present invention, in the lighting device according to the second aspect, the first resin layer includes a diffusing agent or a reflecting agent.
請求項4の発明は、請求項3記載の照明装置において、第2の樹脂層は蛍光体を含んでおり、前記蛍光体の粒径は前記拡散剤又は反射剤の粒径よりも大きいことを特徴とする。 According to a fourth aspect of the present invention, in the illumination device according to the third aspect, the second resin layer includes a phosphor, and the particle size of the phosphor is larger than the particle size of the diffusing agent or the reflecting agent. Features.
請求項5の発明は、請求項4記載の照明装置において、第1の樹脂層は、樹脂に拡散剤を3ないし5質量%添加してなることを特徴とする。拡散剤の添加量ゼロ、すなわち、拡散剤の添加量無しの場合の光束を100%としとき、拡散剤の添加量が5質量%を超過すると、光束が低下し、同添加量が3質量%未満になると、色むら低減効果が低下するので上記範囲が好適である。 According to a fifth aspect of the present invention, in the lighting device according to the fourth aspect, the first resin layer is formed by adding 3 to 5 mass% of a diffusing agent to the resin. When the addition amount of the diffusing agent is zero, that is, when the luminous flux without the addition amount of the diffusing agent is 100%, if the addition amount of the diffusing agent exceeds 5 mass%, the luminous flux decreases, and the addition amount is 3 mass%. If the ratio is less than 1, the effect of reducing color unevenness decreases, so the above range is suitable.
請求項6の発明は、請求項1ないし5いずれか一記載の照明装置において、前記第2の樹脂層の屈折率は、空気の屈折率と第1の樹脂層の屈折率との間であることを特徴とする。 According to a sixth aspect of the present invention, in the lighting device according to any one of the first to fifth aspects, the refractive index of the second resin layer is between the refractive index of air and the refractive index of the first resin layer. It is characterized by that.
請求項1ないし4の発明では、第1の樹脂層は、製造時には粘度が高く、反射体と基板との間には、少々の隙間が形成されることがあっても、隙間に流れ込むことがなく、所定場所に樹脂量をほぼ一定にすることができる。マトリクス上に配設された各発光素子からの光の透過量を一定にすることができ、第2の樹脂層において、光吸収量が一定になるので、色むらなく可視光に変換されるものである。さらに、第2の樹脂層は、製造時には、粘度が低く、第1の樹脂層の上に均等に満遍なく塗布されるものであり、第2の樹脂層の厚みに変化が無く、全体として発光色の色むらを低減できる。 In the first to fourth aspects of the invention, the first resin layer has a high viscosity at the time of manufacture, and even if a slight gap may be formed between the reflector and the substrate, the first resin layer may flow into the gap. The amount of resin can be made substantially constant at a predetermined location. The amount of light transmitted from each light emitting element arranged on the matrix can be made constant, and the amount of light absorption is constant in the second resin layer, so that it can be converted into visible light without color unevenness. It is. Furthermore, the second resin layer has a low viscosity at the time of manufacture, and is evenly and evenly applied on the first resin layer. The thickness of the second resin layer is not changed, and the overall emission color is not changed. Color unevenness can be reduced.
請求項5の発明では、第1の樹脂層は、樹脂に拡散剤を3ないし5質量%添加するようにしたので、拡散剤の添加量ゼロ、すなわち、拡散剤の添加量無しの場合の光束を100%としたとき、拡散剤の添加量が5質量%を超過すると、光束が低下し、同添加量が3質量%未満になると、色むら低減効果が低下するので上記範囲が好適である。 In the invention of claim 5, since the first resin layer adds 3 to 5% by mass of the diffusing agent to the resin, the light flux in the case where the addition amount of the diffusing agent is zero, that is, the addition amount of the diffusing agent is not present. When the addition amount of the diffusing agent exceeds 5% by mass, the luminous flux decreases. When the addition amount is less than 3% by mass, the effect of reducing color unevenness decreases, so the above range is preferable. .
請求項6の発明では、第2の樹脂層の屈折率は、空気の屈折率と第1の樹脂層の屈折率との間であるので、発光素子が放射された光が、相対的に屈折率の高い第1の樹脂層から屈折率の低い第2の樹脂層に入射する際、界面で反射する光の量を低減でき、照明装置から光を取り出す効率が向上する。 In the invention of claim 6, since the refractive index of the second resin layer is between the refractive index of air and the refractive index of the first resin layer, the light emitted from the light emitting element is relatively refracted. When entering the second resin layer having a low refractive index from the first resin layer having a high rate, the amount of light reflected at the interface can be reduced, and the efficiency of extracting light from the lighting device is improved.
以下、本発明の一実施の形態を図面を参照して説明する。図1は本発明の一実施形態に係る照明装置の平面図、図2は図1のII−II線断面図、図3は図2のIII部拡大図である。図に示すように照明装置1は基板2上に、複数の発光装置3,3・・・を例えば3行3列のマトリクス状に配設し、かつ一体に連成している。基板2は放熱性と剛性を有するアルミニウム(Al)やNi、ガラスエポキシ等の平板からなり、この基板2上には、電気絶縁体4を介してリードフレーム5が配設されている。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a lighting device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1, and FIG. As shown in the figure, the lighting device 1 has a plurality of light emitting devices 3, 3... Arranged on a substrate 2 in a matrix of, for example, 3 rows and 3 columns, and are integrally connected. The substrate 2 is made of a flat plate made of aluminum (Al), Ni, glass epoxy or the like having heat dissipation and rigidity, and a lead frame 5 is disposed on the substrate 2 via an electrical insulator 4.
図3に示すようにリードフレーム5は、LED装置3毎にCuとNiの合金やAu等により、陰極側と陽極側の回路パターン(配線パターン)5a,5bを形成しており、このリードフレーム5上には、発光装置3毎に、発光素子としての青色発光LEDチップ6をそれぞれ搭載している。各青色発光LEDチップ6は、青色の光を発光する例えば窒化ガリウム(GaN)系半導体等からなる。各青色発光LEDチップ6は、その底面電極を回路パターン5a,5bの一方上に載置して電気的に接続する一方、上面電極を回路パターン5a,5bの他方にボンディングワイヤ7により接続している。 As shown in FIG. 3, the lead frame 5 has cathode and anode circuit patterns (wiring patterns) 5a and 5b formed of an alloy of Cu and Ni, Au, or the like for each LED device 3, and this lead frame. 5, a blue light emitting LED chip 6 as a light emitting element is mounted for each light emitting device 3. Each blue light emitting LED chip 6 is made of, for example, a gallium nitride (GaN) semiconductor that emits blue light. Each blue light emitting LED chip 6 has its bottom electrode placed on one of the circuit patterns 5a and 5b to be electrically connected, while its top electrode is connected to the other of the circuit patterns 5a and 5b by a bonding wire 7. Yes.
そして、基板2上には、収容部としての凹部8が形成される。すなわち、各青色発光LEDチップ6の周囲を所要の間隔を置いて取り囲み、基板2の反対側(図2,図3では上方)に向けて漸次拡開する反射面を構成する円錐台状の凹部8をそれぞれ同心状に形成した反射体9をLED装置3毎に形成すると共に、これらを一体に形成している。反射体9は例えばPBT(ポリブチレンテレフタレート)やPPA(ポリフタルアミド)、PC(ポリカーボネート)等の合成樹脂よりなり、各凹部8は外部に開口する開口8aをそれぞれ有する。 Then, on the substrate 2, a concave portion 8 is formed as a housing portion. That is, a frustoconical concave portion that surrounds each blue light emitting LED chip 6 with a predetermined interval and constitutes a reflecting surface that gradually expands toward the opposite side of the substrate 2 (upward in FIGS. 2 and 3). A reflector 9 in which 8 is formed concentrically is formed for each LED device 3, and these are integrally formed. The reflector 9 is made of a synthetic resin such as PBT (polybutylene terephthalate), PPA (polyphthalamide), PC (polycarbonate), etc., and each recess 8 has an opening 8a that opens to the outside.
各凹部8は、その内部に、透光性を有するシリコーンゴムやエポキシ樹脂等の熱硬化性透明樹脂を封止樹脂10としてそれぞれ充填している。この封止樹脂10は、青色発光LEDチップ6側に第1の樹脂層としての拡散層11と、凹部開口8a側に第2の樹脂層としての黄色発光蛍光体層12とが2層に形成されている。 Each recess 8 is filled with a thermosetting transparent resin such as translucent silicone rubber or epoxy resin as a sealing resin 10. The sealing resin 10 includes a diffusion layer 11 as a first resin layer on the blue light emitting LED chip 6 side and a yellow light emitting phosphor layer 12 as a second resin layer on the concave opening 8a side. Has been.
なお、第2の樹脂層の屈折率は、空気の屈折率と第1の樹脂層の屈折率との間になるようにしている。そうすると、発光素子が放射された光が、相対的に屈折率の高い第1の樹脂層から屈折率の低い第2の樹脂層に入射する際、界面で反射する光の量を低減でき、照明装置から光を取り出す効率を向上できる。 The refractive index of the second resin layer is set to be between the refractive index of air and the refractive index of the first resin layer. Then, when the light emitted from the light emitting element enters the second resin layer having a relatively low refractive index from the first resin layer having a relatively high refractive index, the amount of light reflected at the interface can be reduced, and illumination can be achieved. The efficiency of extracting light from the device can be improved.
拡散層11は、凹部8内に、アルミナ(Al2O3)やTi、Ca、Si、Al、Y等の拡散剤を3〜5質量%(mass%)添加した封止樹脂を、青色発光LEDチップ6よりも高い位置まで注入して熱硬化させることにより形成され、蛍光体層12との境界面11aを青色発光LEDチップ6側(図3では下面側)へ凹む湾曲面に形成している。この湾曲境界面11aは、その湾曲上端と同下端との間が例えば1μm〜5μmが好ましい。 The diffusion layer 11 is a blue light emitting sealing resin obtained by adding 3 to 5 mass% (mass%) of a diffusing agent such as alumina (Al 2 O 3 ), Ti, Ca, Si, Al, or Y in the recess 8. It is formed by injecting to a position higher than the LED chip 6 and thermosetting, and the boundary surface 11a with the phosphor layer 12 is formed in a curved surface recessed to the blue light emitting LED chip 6 side (lower surface side in FIG. 3). Yes. The curved boundary surface 11a is preferably 1 μm to 5 μm, for example, between the upper end and the lower end of the curve.
また、拡散層11の封止樹脂10に添加した拡散剤の添加量が3〜5質量%であるので、光束を低下させずに白色光の色むらを低減することができる。次の表1は拡散剤の添加量による光束変化を示す。なお、拡散剤の添加量ゼロ、すなわち、拡散剤の添加量無しの場合の光束を100%とすると、拡散剤の添加量が5質量%を超過すると、光束が低下し、同添加量が3質量%未満になると、色むら低減効果が低下した。 Moreover, since the addition amount of the diffusing agent added to the sealing resin 10 of the diffusion layer 11 is 3 to 5% by mass, it is possible to reduce the color unevenness of white light without reducing the luminous flux. Table 1 below shows changes in luminous flux depending on the amount of diffusing agent added. In addition, when the addition amount of the diffusing agent is zero, that is, when the addition amount of the diffusing agent is 100%, when the addition amount of the diffusing agent exceeds 5% by mass, the light flux is decreased and the addition amount is 3 When the content was less than mass%, the effect of reducing color unevenness decreased.
黄色発光蛍光体層12は、拡散層11の熱硬化形成後、凹部8内に、LEDチップ6からの青色発光を受光して黄色に蛍光発光する黄色発光蛍光体を所要質量%添加した封止樹脂を注入して熱硬化させて構成されている。 The yellow light-emitting phosphor layer 12 is sealed by adding the required mass% of a yellow light-emitting phosphor that receives blue light from the LED chip 6 and fluoresces yellow after the thermosetting formation of the diffusion layer 11. It is configured by injecting resin and thermosetting.
次に、この照明装置1の作用を説明する。まず、各陰極側と陽極側の回路パターン5a,5b間に、外部から所定の直流電圧が印加されると、各青色発光LEDチップ6が青色発光される。この青色発光は、拡散層11により多方向へ拡散されてから黄色発光蛍光体層12内に入射し、ここで黄色蛍光体を多方向から励起して黄色に発光させると共に、この黄色と混色されて白色光になって各凹部開口8aから外部へ放射される。 Next, the effect | action of this illuminating device 1 is demonstrated. First, when a predetermined DC voltage is applied between the cathode-side and anode-side circuit patterns 5a and 5b from the outside, each blue light-emitting LED chip 6 emits blue light. This blue light emission is diffused in multiple directions by the diffusion layer 11 and then enters the yellow light emitting phosphor layer 12, where the yellow phosphor is excited from multiple directions to emit yellow light and is mixed with this yellow color. It becomes white light and is radiated to the outside from each recess opening 8a.
拡散層11は、製造時には粘度が高く、反射体9と基板2との間には、少々の隙間が形成されることがあっても、隙間に流れ込むことがなく、凹部8内に樹脂量をほぼ一定にすることができる。マトリクス上に配設された各発光素子からの光の透過量を一定にすることができ、黄色発光蛍光体層12において、光吸収量が一定になるので、色むらなく可視光に変換されるものである。さらに、黄色発光蛍光体層12は、製造時には、粘度が低く、拡散層11の上に均等に満遍なく塗布されるものであり、黄色発光蛍光体層12の厚みに変化が無く、全体として発光色の色むらを低減できる。 The diffusion layer 11 has a high viscosity at the time of manufacture, and even if a slight gap is formed between the reflector 9 and the substrate 2, the diffusion layer 11 does not flow into the gap, and the amount of resin is reduced in the recess 8. It can be made almost constant. The amount of light transmitted from each light emitting element arranged on the matrix can be made constant, and the amount of light absorption becomes constant in the yellow light emitting phosphor layer 12, so that it is converted into visible light without color unevenness. Is. Further, the yellow light-emitting phosphor layer 12 has a low viscosity at the time of manufacture, and is evenly and evenly coated on the diffusion layer 11, and the thickness of the yellow light-emitting phosphor layer 12 does not change, and the emission color as a whole. Color unevenness can be reduced.
したがって、このLED照明装置1によれば、青色発光LEDチップ6の微小な発光を拡散層11により多方向へ拡散し、多方向から蛍光体層12の黄色蛍光体を励起させて黄色に発光させ、かつこの黄色光と青色光とを混色させて白色光を発光させるので、この白色光の色むらを低減することができる。 Therefore, according to this LED illumination device 1, minute light emission of the blue light emitting LED chip 6 is diffused in multiple directions by the diffusion layer 11, and the yellow phosphor of the phosphor layer 12 is excited from multiple directions to emit yellow light. In addition, since the yellow light and the blue light are mixed to emit white light, the color unevenness of the white light can be reduced.
なお、拡散層11の拡散剤の添加率を5質量%よりも多くすると、青色発光LEDチップ6等の発光がNi製等の基板2に吸収される光量が増加するので、凹部開口8aから外部に放射される白色光の光束が低下する。 If the addition ratio of the diffusing agent in the diffusion layer 11 is more than 5% by mass, the amount of light emitted from the blue light emitting LED chip 6 and the like is absorbed by the substrate 2 made of Ni or the like. The luminous flux of white light radiated on the screen is reduced.
そこで、この基板2の受光面に、白色塗料等の反射材を塗布して反射面に形成することにより、光束低下を防止または抑制するように構成してもよい。 In view of this, the light receiving surface of the substrate 2 may be coated with a reflective material such as a white paint to form the reflective surface, thereby preventing or suppressing a decrease in luminous flux.
2…基板、4…絶縁体、5a,5b…回路パターン、6…発光素子、9…反射体、11…拡散層、12…蛍光体層。 DESCRIPTION OF SYMBOLS 2 ... Board | substrate, 4 ... Insulator, 5a, 5b ... Circuit pattern, 6 ... Light emitting element, 9 ... Reflector, 11 ... Diffusion layer, 12 ... Phosphor layer.
Claims (6)
各収容部に配設された発光素子と;
各収容部に設けられ、前記発光素子を被覆する第1の樹脂層と;
第1の樹脂層の粘度よりも低い粘度に形成され、第1の樹脂層の上側に配設される第2の樹脂層と;
を具備していることを特徴とする照明装置。 A substrate having a plurality of receiving portions;
A light emitting device disposed in each housing portion;
A first resin layer provided in each housing portion and covering the light emitting element;
A second resin layer formed at a lower viscosity than that of the first resin layer and disposed on the upper side of the first resin layer;
An illumination device comprising:
基板に配設された絶縁体と;
絶縁体を介して前記基板に配設された回路パターンと;
回路パターンを介してマトリクス状に配置される複数の発光素子と;
前記基板上に配設され、前記複数の発光素子から放射される光を反射する反射体と;
発光素子を被覆する第1の樹脂層と;
第1の樹脂層の粘度よりも低い粘度に形成され、第1の樹脂層の上側に配設される第2の樹脂層と;
を具備していることを特徴とする照明装置。 A substrate;
An insulator disposed on the substrate;
A circuit pattern disposed on the substrate via an insulator;
A plurality of light emitting elements arranged in a matrix through a circuit pattern;
A reflector disposed on the substrate and reflecting light emitted from the plurality of light emitting elements;
A first resin layer covering the light emitting element;
A second resin layer formed at a lower viscosity than that of the first resin layer and disposed on the upper side of the first resin layer;
An illumination device comprising:
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Cited By (7)
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JP2009043836A (en) * | 2007-08-07 | 2009-02-26 | Stanley Electric Co Ltd | Semiconductor light-emitting device |
JP2010232203A (en) * | 2009-03-25 | 2010-10-14 | Toyoda Gosei Co Ltd | Light emission device and method of manufacturing the same |
US8242526B2 (en) | 2008-08-29 | 2012-08-14 | Epistar Corporation | Light-emitting semiconductor device and package thereof |
CN102903832A (en) * | 2008-09-12 | 2013-01-30 | 晶元光电股份有限公司 | Semiconductor light-emitting device and packaging structure thereof |
JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
WO2014122888A1 (en) | 2013-02-06 | 2014-08-14 | 株式会社小糸製作所 | Light-emitting module |
JP2014204071A (en) * | 2013-04-09 | 2014-10-27 | シチズン電子株式会社 | Lighting device |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009043836A (en) * | 2007-08-07 | 2009-02-26 | Stanley Electric Co Ltd | Semiconductor light-emitting device |
US8242526B2 (en) | 2008-08-29 | 2012-08-14 | Epistar Corporation | Light-emitting semiconductor device and package thereof |
US8395175B2 (en) | 2008-08-29 | 2013-03-12 | Epistar Corporation | Light-emitting semiconductor device and package thereof |
CN102903832A (en) * | 2008-09-12 | 2013-01-30 | 晶元光电股份有限公司 | Semiconductor light-emitting device and packaging structure thereof |
JP2010232203A (en) * | 2009-03-25 | 2010-10-14 | Toyoda Gosei Co Ltd | Light emission device and method of manufacturing the same |
JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
WO2014122888A1 (en) | 2013-02-06 | 2014-08-14 | 株式会社小糸製作所 | Light-emitting module |
JP2014204071A (en) * | 2013-04-09 | 2014-10-27 | シチズン電子株式会社 | Lighting device |
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