CN103165792A - Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure - Google Patents
Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure Download PDFInfo
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- CN103165792A CN103165792A CN2011104305471A CN201110430547A CN103165792A CN 103165792 A CN103165792 A CN 103165792A CN 2011104305471 A CN2011104305471 A CN 2011104305471A CN 201110430547 A CN201110430547 A CN 201110430547A CN 103165792 A CN103165792 A CN 103165792A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Abstract
The invention relates to a light emitting diode (LED) heat-dissipation packaging structure and an LED light with the LED heat-dissipation packaging structure. The LED heat-dissipation packaging structure comprises an LED unpacked chip, a heat-conducting electric insulation substrate, a heat pipe and a radiator, wherein the LED unpacked chip is installed on the heat-conducting electric insulation substrate, the heat-conducting electric insulation substrate is attached to one end of the heat pipe, and the other end of the heat pipe is connected with the radiator in an inserted mode. The LED light comprises a light shade, the LED heat-dissipation packaging structure, a light-socket, a guide wire, a driving source and a binding post, wherein the driving source is installed in the light-socket, the driving source is connected with the binding post through the guide wire, the binding post is installed in the middle of the heat pipe, and the light-socket and the light shade are installed at two ends of the radiator. Due to the fact that the heat transfer efficiency is high, the structure that the LED unpacked chip is directly packaged in a heating end of the heat pipe reduces thermal resistance and accelerates transmission of heat. Therefore, the working temperature of the LED chip keeps low.
Description
[technical field]
The invention belongs to lamp lighting and heat dissipation technology field, relate to LED heat-dissipation packaging structure, the manufacture method of this heat-dissipation packaging structure and the LED lamp with this heat-dissipation packaging structure on a kind of hot junction that the LED bare chip directly is mounted on heat pipe.
[background technology]
The filament of traditional incandescent lamp is sealed in filament in the environment that completely cuts off with oxygen take tungsten as material, for example is sealed in middle high vacuum or inert gas environment, to guarantee the useful life of filament.The luminous efficiency of incandescent lamp bulb is low, is replaced by luminous efficiency high fluorescent lamp and the nearest LED illuminating lamp that rises gradually.
Traditional high-powered LED lamp bubble structure is generally that one or many high-power LED chips first are packaged into LED lamp pearl or LED multi-chip modules, then with its be assembled in heat sink on.The heat that produces during work is passed to heat sink and metal fin by the substrate of chip bottom, and heat mode with heat convection on fin derives in air the most at last.
in general, whether the work of LED lamp is stable, the quality quality, most important with the heat radiation of lamp body itself, too high temperature makes LED light decay effect obvious, the life-span of LED and LED driver chip can sharply descend, common metal fin can not satisfy the heat radiation of high-powered LED lamp, in order to strengthen heat radiation, people have expected the heat pipe heat radiation technology is incorporated into the heat radiation of LED lamp, in the present generally cold junction described fin of insertion or radiating block with heat pipe, the hot junction of heat pipe contacts heat conduction with LED lamp pearl or module by mechanical crimping, affected whole radiating efficiency.
On the other hand, due at present traditional LED lamp pearl and LED module be all be assembled in heat sink or metal fin on, so be subject to the impact of this radiator structure, most high-power LED bulbs can only be to the space luminescence of half at present, make the application of this high-power LED bulb be restricted, can not substitute traditional incandescent lamp bulb and the gas discharge bulb of compact fully.
[summary of the invention]
Purpose of the present invention is exactly the problem that exists in order to solve prior art, and the LED lamp that has proposed a kind of LED heat-dissipation packaging structure and had this structure has also proposed the manufacture method of described heat-dissipation packaging structure.Heat-dissipation packaging structure of the present invention is spatially realized high-power LED chip to separate with the heat sink structure of heat radiation, and make LED chip directly be encapsulated on heat pipe, thereby guaranteed the good derivation of LED chip heat production, guaranteed that again the LED bulb can have larger light emitting anger as ordinary incandescent lamp.
Concrete technical scheme of the present invention is as follows:
The invention provides a kind of LED heat-dissipation packaging structure, it is characterized in that, this heat-dissipation packaging structure comprises electrically insulating base, heat pipe and the radiator of LED bare chip, heat conduction, described LED bare chip is arranged on the electrically insulating base of described heat conduction, the electrically insulating base of described heat conduction is mounted on the hot junction of heat pipe, and cold junction is plugged in radiator.
The metal-coated transition zone in the two sides of the electrically insulating base of described heat conduction, the front metal transition zone comprises die bonding pad and lead pad, the intermediate metal at the described back side is connected by solder with heat pipe.
Described LED bare chip is connected on described die bonding pad, and the positive and negative electrode of LED bare chip is connected with lead pad.
Described lead pad is positioned at the both sides of die bonding pad, and lead pad is positioned at the both sides of substrate.
Described LED bare chip welds by solder or solder layer melts or is connected on the die bonding pad by the heat conduction elargol, and the positive and negative electrode of described LED bare chip is connected with lead pad by bonding wire.
The electrically insulating base contact-making surface of described heat pipe and heat conduction is the plane, and the two sides of described substrate is the plane.
Described LED bare chip is sealed in the crown top of burner that a transparent glue is solidified into, and this crown top of burner is enclosed in the cover body that is mixed with fluorescent material, and described cover body is connected by glue with the side plane of heat pipe.
Described LED bare chip is sealed in one and is mixed with in the glue curing body of fluorescent material.
The present invention also provides a kind of LED lamp, this LED lamp comprises lampshade, LED heat-dissipation packaging structure, lamp socket, wire, driving power and binding post, it is characterized in that, this LED light fixture has above-mentioned LED heat-dissipation packaging structure, described driving power is arranged in described lamp socket, described driving power is connected with binding post by wire, and described binding post is installed on the middle part of heat pipe, and described lamp socket and lampshade are installed on respectively the two ends of radiator.
The present invention separately provides a kind of manufacture method of LED heat-dissipation packaging structure as above, it is characterized in that, the method comprises the steps:
The LED bare chip is arranged on the electrically insulating base of heat conduction, then the electrically insulating base of heat conduction is mounted on the hot junction of heat pipe, the cold junction of heat pipe is plugged in radiator, pours at last working solution in heat pipe, adjusts the heat radiation working point and heat pipe is sealed.
The technique effect that the present invention is useful is:
The LED bare chip of LED heat-dissipation packaging structure of the present invention adopts highly heat-conductive material to be connected with the electrically insulating base of heat conduction, the electrically insulating base of heat conduction simultaneously adopts again highly heat-conductive material to be connected with heat pipe, this structure that the LED bare chip directly is encapsulated in the hot junction of heat pipe can be referred to as to manage upper chip package (Chip on Tube is called for short COT).The heat that produces during chip operation is delivered to heat pipe by the electrically insulating base of heat conduction, and be delivered to rapidly the cold junction of heat pipe, fin and air by radiator carry out heat exchange, because the heat transfer efficiency of heat pipe is very high, so accelerated heat transfer when this structure that the LED bare chip directly is encapsulated in the hot junction of heat pipe has reduced thermal resistance, make LED chip remain on lower working temperature, extended the useful life of LED chip.
Heat pipe can be used as a strutting piece simultaneously, its hot junction can be configured as polygon, every limit all can supply to be placed with one or plurality of LEDs bare chip, and can stretch into optional position in lampshade with heat pipe, such as, make LED chip be placed in the lampshade center, thereby above-mentioned LED heat-dissipation packaging structure not only can be realized 270 degree or luminous greater than the angle of 270 degree, and heat pipe can also bend to various angles and carry out the combination of many heat pipes, enriched the version of high-power LED bulb.
Luminescent phosphor is coated on transparent glass cover, is not directly to be coated on chip, between separate with air, the too high heat that chip produces can not make fluorescent material variable color or inefficacy, and heat directly transmits out by the electrically insulating base of heat conduction.
Due to the good thermal conductivity of heat pipe, if heat pipe is poured into working solution in advance, will be difficult to because of distributing of heat the electrically insulating base of heat conduction is welded on heat pipe, so needs first are welded on the electrically insulating base of heat conduction on the copper pipe of heat pipe, pour into again working solution in heat pipe, and heat pipe is sealed.
[description of drawings]
Fig. 1 is the profile of LED bulb of the present invention;
Fig. 2 is the profile of LED heat-dissipation packaging structure of the present invention;
Fig. 3 is the sectional view of heat pipe of the present invention;
Fig. 4 is the perspective view of the electrically insulating base of heat conduction of the present invention;
Fig. 5 is that substrate, binding post that the LED bare chip is installed is mounted on the stereochemical structure partial schematic diagram on heat pipe;
Fig. 6 installs the perspective view of fluorescence cover on structure LED chip in Fig. 5;
Fig. 7 applies the perspective view of fluorescent glue water cure on structure LED chip in Fig. 5.
Wherein:
1: lamp socket; 2: driving power; 3: radiator; 4: wire; 5: heat pipe; 6: binding post; 7: the cover body that is mixed with fluorescent material; 8: lampshade; The 10:LED heat-dissipation packaging structure; 11: working solution; 12: foam copper; The 15:LED bare chip; 16: bonding wire 17: the crown top of burner; 18: the glue curing body that is mixed with fluorescent material; 20: the electrically insulating base of heat conduction; 21: the die bonding pad; 22: lead pad: 23: the intermediate metal at the back side; 32: the eutectic welding tablet; 33: the pad of binding post.
[embodiment]
For the purpose, technical scheme and the advantage that make invention is clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not used for limiting the present invention.
As shown in Fig. 1-6, the invention provides a kind of LED bulb, this LED ball bulb comprises lampshade 8, LED heat-dissipation packaging structure 10, lamp socket 1, wire 4, driving power 2 and the binding post 6 that injection moulding or blowing form.
Described LED radiator structure 10 comprises electrically insulating base 20, heat pipe 5 and the radiator 3 of plurality of LEDs bare chip 15, heat conduction, described LED bare chip 15 is arranged on the electrically insulating base 20 of described heat conduction, the electrically insulating base 20 of described heat conduction is mounted on an end (being the hot junction) of heat pipe 5, and the other end (being cold junction) is plugged in radiator 3.
The electrically insulating base 20 of described heat conduction is as the insulator between LED bare chip 15 and heat pipe 5, thermal conductor and chip supporter, use high heat-conduction electric insulation material (for example: aluminium nitride ceramics, aluminium oxide ceramics, silicon wafer), the metal-coated transition zone in two sides of the electrically insulating base 20 of this heat conduction is (as Ti/Ni/Au, Ti/Cu/Au, Ti/Ni/Ag, Ti/Cu/Ag etc.), the front metal transition zone comprises die bonding pad 21 and lead pad 22, and the intermediate metal 23 at the described back side is connected by solder with heat pipe 5.
Described LED bare chip 15 welds by solder or the solder layer thawing is connected on described die bonding pad 21, and the positive and negative electrode of LED bare chip (pressure welding point) is connected with lead pad 22 by bonding wire (spun gold, copper wire or aluminium wire) 16.
Described lead pad 22 is positioned at the both sides of die bonding pad 21, lead pad 22 is positioned at the both sides of the electrically insulating base 20 of heat conduction, described die bonding pad 21 is positioned at the centre of the electrically insulating base 20 of heat conduction, and plurality of LEDs bare chip 15 is arranged in row and is welded on described die bonding pad 21.
described heat pipe 5 is the plane with electrically insulating base 20 contact-making surfaces of heat conduction, the two sides of the electrically insulating base 20 of described heat conduction is the plane, the electrically insulating base 20 of described heat conduction is by eutectic welding tablet 32 (Sn63Pb37, the scolders such as SnAg3Cu0.5) fusing connects, be arranged on the plane of heat pipe 5 sides, hot junction, heat pipe 5 can be multi-edge column-shaped, such as the flat prism in two sides, triangular prism, quadrangular, six prisms and polygon prism etc., can be also cylindrical, but the hot junction head is processed into above-mentioned multi-edge column-shaped, with the electrically insulating base 20 that provides some planes that heat conduction is installed.Each side of heat pipe 5 can mounting strap LED bare chip 15 the electrically insulating base 20 of heat conduction, form a three-dimensional LED luminous element of installing in the hot junction of heat pipe 5.Heat pipe 5 inwalls are covered with foam copper 12, the interior perfusion working solution 11 of heat pipe 5.The head seal at the two ends of heat pipe 5 (hot junction and cold junction).
Described LED bare chip 15 and bonding wire 16 are sealed in the crown top of burner 17 that a transparent glue is solidified into, and this crown top of burner 17 is enclosed in the cover body 7 that is mixed with fluorescent material, and the described cover body 7 that is mixed with fluorescent material is connected by glue and seals with the side plane of heat pipe 5.
Because heat pipe has good thermal conductivity, so it is as follows to make the method for LED heat-dissipation packaging structure:
Power LED bare chip 15 (one or many) directly is mounted on the electrically insulating base 20 of the heat conduction of having carried out electrode and circuit diagram, again the electrically insulating base 20 of heat conduction is welded on the hot junction of heat pipe 5, form upper chip (the Chip on Tube of pipe, abbreviation COT) encapsulation style, then the cold junction with heat pipe 5 inserts with fixing on the radiator 3 of fin, perfusion working solution 11 in heat pipe 5, adjust the heat radiation working point and heat pipe 5 sealed at last.Transparent glue (silica gel, epoxy glue) is covered on LED bare chip 15 and bonding wire 16 thereof, is solidified into the crown top of burner 17; Then the prefabricated cover body that is mixed with fluorescent material 7 is placed on the electrically insulating base 20 of the crown top of burner 17 and heat conduction, uses glue to be connected with heat pipe 5 hot junction side planes.
Described lampshade 8 is the photodiffusion material of high index of refraction, the edge is with the fastening structure of wedge shape, be convenient to be connected with an end of radiator 3, described lamp socket 1 is installed on the other end of radiator 3, described driving power 2 is arranged in described lamp socket 1, forms circuit with lamp socket 1 and is connected, and the binding post 6 of pcb board or plastic packaging material is arranged on heat pipe 5 middle parts, pad 33 1 ends of binding post 6 connect LED driving powers 2 by wire 4, and the other end is connected on the lead pad 22 of electrically insulating base 20 of heat conduction.
Under the power supply state of normal power source, the heat that LED bare chip 15 produces is passed to the hot junction (top) of heat pipe 5 by the electrically insulating base 20 of heat conduction, be in the working solution 11 vaporization heat absorptions in the hot junction of heat pipe 5, flow to rapidly the cold junction of heat pipe 5, carry out heat exchange thereby the hot junction heat is passed to the radiator with fin 3 that cold junction and the cold junction by heat pipe 5 connect with air.In this process, working solution 11 liquefies in the cold junction condensation, and the capillary structure of the foam copper 12 that adheres to by heat pipe 5 inwalls moves to the hot junction.Working solution 11 so circulates at cold junction and hot junction, thereby the heat in hot junction is exported to cold junction continuously.Because the electrically insulating base 20 of LED bare chip 15, heat conduction in this structure adopts highly heat-conductive materials (relating to pottery, silicon, metal level, slicken solder etc.) directly to be connected with heat pipe 5, and heat pipe 5 has heat radiation fast, the advantage that thermal resistance is little, make LED bare chip 15 remain on lower working temperature, extended the useful life of LED bulb.
Luminescent phosphor is mixed or be coated in the housing of printing opacity and form the cover body 7 that is mixed with fluorescent material, fluorescent material is not directly to be coated on LED bare chip 15, heat directly transmits out by the electrically insulating base 20 of heat conduction, and the cover body 7 that is mixed with fluorescent material has separation with the crown top of burner 17, and the too high heat that LED bare chip 15 produces can not make fluorescent material variable color or inefficacy.
In above-described embodiment 1, luminescent phosphor is mixed or be coated in the housing of printing opacity and form the cover body 7 that is mixed with fluorescent material, fluorescent material is not directly to be coated on LED bare chip 15, heat directly transmits out by the electrically insulating base 20 of heat conduction, and the cover body 7 that is mixed with fluorescent material has separation with the crown top of burner 17, and the too high heat that LED bare chip 15 produces can not make fluorescent material variable color or inefficacy.But this structure has the complexity of manufacturing, the problem that cost is higher, and the present embodiment has proposed the structure different from this embodiment, as shown in Figure 7:
The electrically insulating base 20 of described LED bare chip 15, bonding wire 16 and heat conduction is sealed in one and is mixed with in the glue curing body 18 of fluorescent material.Concrete manufacture method is: fluorescent material is mixed in glue (silica gel, epoxy glue), evenly is coated on LED bare chip 15, then solidify to form the glue curing body 18 that is mixed with fluorescent material.
LED bare chip 15 back sides with or without welding solder layer, LED bare chip 15 is connected in by the heat conduction elargol on the die bonding pad 21 of electrically insulating base 20 of heat conduction, and the positive and negative electrode of LED bare chip 15 (pressure welding point) is connected by the lead pad 22 of both sides on the electrically insulating base 20 of bonding wire 16 (spun gold, copper wire or aluminium wire) and heat conduction.The electrically insulating base 20 of heat conduction connects by eutectic welding tablet 32 (Sn63Pb37, the scolders such as SnAg3Cu0.5) fusing, is arranged on the plane of heat pipe 5 sides, hot junction, forms the COT encapsulation.Each side can mounting strap LED bare chip 15 the electrically insulating base 20 of heat conduction, form a three-dimensional LED luminous element of installing in heat pipe 5 hot junctions.
The LED bare chip 15 of this bulb adopts the elargol die bond, and fluorescent material glue covers, and cost is low, makes simple; With the heat pipe quick heat radiating, make LED bare chip 15 remain on lower working temperature simultaneously, extended useful life.All there is bright dipping at its four sides, and light more evenly rationally.
Above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although with reference to preferred embodiment, the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, can modify or be equal to replacement technical scheme of the present invention, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (10)
1. LED heat-dissipation packaging structure, it is characterized in that, this heat-dissipation packaging structure comprises electrically insulating base, heat pipe and the radiator of LED bare chip, heat conduction, described LED bare chip is arranged on the electrically insulating base of described heat conduction, the electrically insulating base of described heat conduction is mounted on the hot junction of heat pipe, and cold junction is plugged in radiator.
2. LED heat-dissipation packaging structure according to claim 1, it is characterized in that, the metal-coated transition zone in the two sides of the electrically insulating base of described heat conduction, the front metal transition zone comprises die bonding pad and lead pad, the intermediate metal at the described back side is connected by solder with heat pipe.
3. LED heat-dissipation packaging structure according to claim 2, is characterized in that, described LED bare chip is connected on described die bonding pad, and the positive and negative electrode of LED bare chip is connected with lead pad.
4. LED heat-dissipation packaging structure according to claim 3, is characterized in that, described lead pad is positioned at the both sides of die bonding pad, and lead pad is positioned at the both sides of substrate.
5. according to claim 3 or 4 described LED heat-dissipation packaging structures, it is characterized in that, described LED bare chip welds by solder or solder layer melts or is connected on the die bonding pad by the heat conduction elargol, and the positive and negative electrode of described LED bare chip is connected with lead pad by bonding wire.
6. according to claim 1-4 arbitrary described LED heat-dissipation packaging structures, is characterized in that, the electrically insulating base contact-making surface of described heat pipe and heat conduction is the plane, and the two sides of described substrate is the plane.
7. according to claim 1-4 arbitrary described LED heat-dissipation packaging structures, it is characterized in that, described LED bare chip is sealed in the crown top of burner that a transparent glue is solidified into, and this crown top of burner is enclosed in the cover body that is mixed with fluorescent material, and described cover body is connected by glue with the side plane of heat pipe.
8. according to claim 1-4 arbitrary described LED heat-dissipation packaging structures, is characterized in that, described LED bare chip is sealed in one and is mixed with in the glue curing body of fluorescent material.
9. LED lamp, this LED lamp comprises lampshade, LED heat-dissipation packaging structure, lamp socket, wire, driving power and binding post, it is characterized in that, this LED light fixture arbitrary described LED heat-dissipation packaging structure of requirement 1-8 of having the right, described driving power is arranged in described lamp socket, described driving power is connected with binding post by wire, and described binding post is installed on the middle part of heat pipe, and described lamp socket and lampshade are installed on respectively the two ends of radiator.
10. the manufacture method of a described LED heat-dissipation packaging structure as arbitrary in claim 1-8, is characterized in that, the method comprises the steps:
The LED bare chip is arranged on the electrically insulating base of heat conduction, then the electrically insulating base of heat conduction is mounted on the hot junction of heat pipe, the cold junction of heat pipe is plugged in radiator, pours at last working solution in heat pipe, adjusts the heat radiation working point and heat pipe is sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104305471A CN103165792A (en) | 2011-12-19 | 2011-12-19 | Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104305471A CN103165792A (en) | 2011-12-19 | 2011-12-19 | Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure |
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| CN103165792A true CN103165792A (en) | 2013-06-19 |
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| CN2011104305471A Pending CN103165792A (en) | 2011-12-19 | 2011-12-19 | Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure |
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| CN (1) | CN103165792A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016077993A1 (en) * | 2014-11-18 | 2016-05-26 | 何素华 | Led light strip and led television |
| CN105737115A (en) * | 2014-12-10 | 2016-07-06 | 广东雪莱特光电科技股份有限公司 | LED headlamp heat conduction structure |
-
2011
- 2011-12-19 CN CN2011104305471A patent/CN103165792A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016077993A1 (en) * | 2014-11-18 | 2016-05-26 | 何素华 | Led light strip and led television |
| CN105737115A (en) * | 2014-12-10 | 2016-07-06 | 广东雪莱特光电科技股份有限公司 | LED headlamp heat conduction structure |
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Application publication date: 20130619 |