CN102364709A - Packaging Structure of High Power Light Emitting Diodes - Google Patents
Packaging Structure of High Power Light Emitting Diodes Download PDFInfo
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- CN102364709A CN102364709A CN2011103341625A CN201110334162A CN102364709A CN 102364709 A CN102364709 A CN 102364709A CN 2011103341625 A CN2011103341625 A CN 2011103341625A CN 201110334162 A CN201110334162 A CN 201110334162A CN 102364709 A CN102364709 A CN 102364709A
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- Prior art keywords
- led chip
- protrusion
- heat
- power light
- emitting diode
- Prior art date
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- 238000004806 packaging method and process Methods 0.000 title claims abstract 10
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 18
- 239000000565 sealant Substances 0.000 claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 2
- 239000003292 glue Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000005286 illumination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- -1 elastoplast Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a high-power LED packaging structure which is characterized by comprising a heat radiating substrate, an LED chip, a lens and a circuit layer, wherein the upper surface of the heat radiating substrate is provided with a bulge; the LED chip is installed on the bulge on the upper surface of the heat radiating substrate; the circuit layer is stuck to the upper surface of the heat radiating substrate through a bonding layer and is provided with an internal electrode and an external electrode connected with a power supply, the internal electrode is arranged at the edge of a hole, and a lead of the LED chip is connected with the internal electrode; the lens is arranged above the LED chip; and the structure ensures that the LED chip directly radiates heat to the air through the substrate which simultaneously has a heat sink function so that the junction temperature of an LED can be effectively reduced. The packaging structure reduces the heat resistance of the entire heat transferring process, can be used for heat radiation of high-power LEDs and realization of efficient illumination and is simple in process and easy to manufacture.
Description
Technical field
The present invention relates to led chip encapsulation technology field, especially relate to a kind of encapsulating structure of great power LED.
Background technology
Led light source has become the best light source that substitutes the traditional lighting light source and has selected because of plurality of advantages such as have that driving voltage is low, luminous flux is high, the life-span is long, structure is little and safe, efficient, energy-conservation.But, along with the progressively application of great power LED in street lamp, auto lamp, room lighting and liquid crystal display.The bottleneck that LED heat radiation becoming LED uses is because it has a strong impact on the brightness of LED and the useful life of LED.
For example, brightness is 100 when the p-n junction temperature (Junction Temperature) of LED is 25 ℃ (exemplary operation temperature), and temperature when being increased to 75 ℃ brightness just reduce to 80, to 125 ℃ surplus 60, during to 175 ℃ only surplus 40.Clearly, junction temperature and luminosity are to be the linear relation of inverse ratio, and temperature more raises, and it is dark that LED brightness is just more changeed.Temperature is linear to the influence of brightness, but the influence in life-span just is index, is as the criterion with junction temperature equally, uses below 50 ℃ then that LED has nearly 20 if remain on always; In 000 hour life-span, 75 ℃ then only remain 10,000 hours; 100 ℃ remain 5,000 hours, 125 ℃ surplus 2; 000 hour, 150 ℃ remained 1,000 hour.Temperature light just shortened 1/4 times 5,000 hours useful life into from 50 ℃ become 2 times 100 ℃ from 20,000 hours, injury greatly.
The encapsulating structure of existing high-power LED chip is only considered the heat radiation of direction straight down mostly, and between high-power LED chip and heat-radiating substrate, is added with the little metal derby of heat radiation, also has the lead-in wire of being exactly to cross reflector.These all need make a lot of improvement.
Summary of the invention
Technical problem to be solved by this invention is to overcome existing led chip heat dissipation problem, and simple in structure, good heat dissipation effect, high power LED package structure that photoelectric conversion efficiency is high are provided, and concrete technical scheme is following.
High power LED package structure; Comprise heat-radiating substrate, led chip, lens and circuit layer, the heat-radiating substrate upper surface has convexity, and led chip is placed on the convexity of heat-radiating substrate upper surface; Circuit layer is bonded in the heat-radiating substrate upper surface through adhesive layer; And circuit layer has the hole that supplies said convexity to pass, and circuit layer is provided with internal electrode and the outer electrode that is used for being connected with power supply, and internal electrode is positioned at the edge in said hole; The lead-in wire of led chip is connected with said internal electrode, and lens are positioned at the led chip top.
As the further improved technical scheme of above-mentioned high power LED package structure; Said led chip directly is bonded on the convexity of heat-radiating substrate upper surface through crystal-bonding adhesive; Be filled with sealant around the led chip in the lens, also be provided with phosphor powder layer between the inwall of lens and the sealant.
As the further improved technical scheme of above-mentioned high power LED package structure, also comprise reflector, led chip and said convexity are arranged in reflector, and the junction of led chip and said internal electrode is arranged in reflector.
As the further improved technical scheme of above-mentioned high power LED package structure, be filled with sealant around the led chip in the lens, the outside of reflector extends out to the said outer electrode of contact.
As the further improved technical scheme of above-mentioned high power LED package structure, the height of said internal electrode is more than or equal to the height of said convexity.
As the further improved technical scheme of above-mentioned high power LED package structure, convexity is square shape or cup-shaped.
As the further improved technical scheme of above-mentioned high power LED package structure, convexity is a cup-shaped, and the cup-shaped convex inner surface scribbles high reflecting material, and led chip is positioned at protruding inner bottom part.
As the further improved technical scheme of above-mentioned high power LED package structure; Said internal electrode and convexity all are positioned at lens; The lead-in wire junction of internal electrode and led chip is positioned at the protruding top of cup-shaped; Be filled with sealant around the led chip in the cup-shaped convexity, be mixed with fluorescent material in the sealant.
As the further improved technical scheme of above-mentioned high power LED package structure, the lower surface of heat-radiating substrate is processed into fin.
As the further improved technical scheme of above-mentioned high power LED package structure, said led chip has a plurality of.
Heat-radiating substrate is high thermal conducting material, comprises copper base, aluminium base, the substrate that co-fired ceramic substrate and other high thermal conducting material are processed.According to the propagation law of heat in heat-radiating substrate, design unique size and profile, the shortening heat conducting path is realized the maximization of efficiency of transmission on the one hand.Increase the contact area of heat-radiating substrate and air on the other hand, form heat loss through convection, strengthen radiating effect.Led chip directly links to each other with heat-radiating substrate through elargol or the weldering of metal eutectic; Heat-radiating substrate need not connect other heat dissipation equipment; The heat of led chip directly passes through heat-radiating substrate to air radiation, and heat-transfer path is just very short like this, and heat transfer efficiency improves greatly; And encapsulating structure is simple, and is easy to make.The heat-radiating substrate surface can be a horizontal plane, and reflector is added in around the led chip in addition, and the material of reflector can be metal, metal alloy, pottery, plastics.After becoming the volume of reflector greatly, reflector itself also can play good heat-radiation effect.Being connected of lead-in wire of the present invention and electrode, make that like this lead-in wire is not long, has strengthened stability and the fail safe of LED in the inner completion of reflector.
Aspect heat conduction path, the present invention lets led chip directly pass to heat-radiating substrate to heat, has saved the little metal derby of the heat radiation in the conventional package.Aspect the convection current radiation, heat-radiating substrate has been carried out sufficient structure optimization.In addition, lead-in wire and electrode are connected the inner completion of reflector, because the coefficient of thermal expansion difference of encapsulating material is very big; After the led chip heating, can produce hot pressing, it is common LED fault that lead-in wire breaks away from; Design lead-in wire of the present invention is very short, so cut this step safety factor.Flexible Application reflector among the present invention, reflector can be used as effective heat dissipation.Radiator structure of the present invention can be used for led chip, also can be used for the led chip module.
Compared with prior art, the present invention has following advantage and technique effect:
1) being connected in the inner completion of reflector of lead-in wire of the present invention and electrode, it is very short to go between.
2) fluorescent material is away from led chip, and its cross section is arc shape.
3) heat-radiating substrate of the present invention has unique convex design.
4) reflector size of the present invention can change flexibly, can bring into play radiating effect,
5) led chip heat conduction path of the present invention is short.
6) encapsulating structure of the present invention is very simple, and is easy to process, can save material and reduce cost.
One aspect of the present invention shortens heat-transfer path; Increase heat-radiating substrate and air contact area on the other hand, strengthen the convection current radiation.
Description of drawings
Fig. 1 is the high-power LED encapsulation structure sketch map of first embodiment.
Fig. 2 is the high-power LED encapsulation structure sketch map of second embodiment.
Fig. 3 is the high-power LED encapsulation structure sketch map of the 3rd embodiment.
Among the figure: 11 heat-radiating substrates; 113 convexities; 2 adhesive layers; 3 circuit layers; 31 outer electrodes; 32 internal electrodes; 5 reflectors; 6 crystal-bonding adhesives; 8 lead-in wires; The 7LED chip; 10 lens; 9 sealants; 12 reflector inner surfaces; 14 phosphor powder layers.
Embodiment
Consult Fig. 1 to shown in Figure 3, the preferred embodiment of the high-power LED encapsulation structure that the present invention provides, but execution mode of the present invention is not limited thereto.
As shown in Figure 1: heat-radiating substrate 11 is equipped with the convexity 113 of square shape at centre bit, and led chip 7 is fixed on protruding 113 through crystal-bonding adhesive 6.Adhesive layer 2 and circuit layer 3 are arranged above the heat-radiating substrate 11.When heat-radiating substrate 11 was insulating material, such as common burning porcelain, adhesive layer 2 can conduct electricity, and during heat-radiating substrate 11 conductions, such as copper, adhesive layer 2 also is an insulating barrier simultaneously.Adhesive layer 2 and circuit layer 3 center perforates; The size of tapping size and convexity 113 is complementary; The heat that led chips 7 above protruding 113 send is in transmission course downwards; Without adhesive layer 2 and circuit layer 3, but directly pass through crystal-bonding adhesive 6 to heat-radiating substrate 11 radiation, heat-radiating substrate 11 is directly to air radiation.Circuit layer 3 has outer electrode 31 and internal electrode 32, and outer electrode 31 connects external power sources, and internal electrode 32 links to each other with led chip 7 through lead-in wire 8.The height of fitting projection 113 and led chip 7, the height of the internal electrode 32 of circuit layer 3 can change.Here do not place reflector 5, consider that the led chip height is higher, the dispersion angle of led chip bright dipping will be very big.Between sealant 9 and lens 10, place one deck fluorescent material 14, the outgoing light wavelength that it can conversion LED chip 7.Fluorescent material 14 is away from led chip, and its interface is arcuation, because away from led chip; And led chip is a thermal source, thus avoid the aging of fluorescent material well, on the other hand; The fluorescent material more even distribution; Its conversion efficiency to light can be higher, and simultaneously, the white light light intensity distributions of mixing the back generation can be more even.
As shown in Figure 2: this structure is identical with Fig. 7 substrate, and difference is to have added reflector 5 around the LED, and reflector 5 is through stretching out until become big near external electrode, and cup-like portion is constant simultaneously.Reflector 5 can be brought into play the heatsink transverse effect well.Reflector 5 surrounds led chip 7, and its inner surface 12 is made by high reflecting material, such as polymer, and argent, aluminium etc. upwards reflect away the light of LED side direction outgoing.Internal electrode 32 is also in reflector 7 inside, so it is connected in reflector 7 inner completion mutually with led chip 7, and going between so just can be very short, the stability of the LED of enhancing.Reflector 7 inner filling sealing agents 9, (9 use silica gel to sealant usually, and silica gel has many good qualities, and its refractive index is big; Can flavescence; Keep gel.Protect led chip 7 and lead-in wire 8 well.Can the mixed light transition material in the sealant 9, reach the light conversion effect.Sealant 9 tops are lens 10.Lens 10 can be processed by materials such as elastoplast, glass, resin, acrylics.Lens can be bigger, all surrounds the entire emission cup, and the shape of lens can change.Changed the dispersion angle of led chip 7 bright dippings through reflector 5 and lens 10.Here do not place fluorescent material 14.Here, can change the height of convexity 113 or the size of reflector or the shape of lens and reach the distribution curve flux that satisfies the demands.Structure has a tangible advantage to be exactly, because lead-in wire 8 is positioned at reflector inside, and very short, the probability that causes LED to lose efficacy because of wire breaking will inevitably reduce widely.
As shown in Figure 3: this structure is very similar with Fig. 1, and difference is that protruding 113 upper surface is a concave surface, and protruding 113 inner surface 12 is a kind of high reflectance materials, and protruding 113 have possessed the function of reflector 5.Here, the lower surface of heat-radiating substrate 11 also can process fin, to strengthen heat radiation.Sealant 9 can be mixed with fluorescent material, handles protective effect, also plays the light transformation, makes the light of both wavelength mix the generation white light, and the material composition of fluorescent material can be YAG.Result among the figure is very simple, and reflector and heat-radiating substrate are an integral body, and circuit layer 3 can be made by the sheet metal through bending process, and as a whole with 31 one-tenth with the internal and external electrode 32 on it.The advantage of this structure has been simplified the LED encapsulating structure, simultaneously, has strengthened radiating effect.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103341625A CN102364709A (en) | 2011-10-29 | 2011-10-29 | Packaging Structure of High Power Light Emitting Diodes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103341625A CN102364709A (en) | 2011-10-29 | 2011-10-29 | Packaging Structure of High Power Light Emitting Diodes |
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| Publication Number | Publication Date |
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| CN102364709A true CN102364709A (en) | 2012-02-29 |
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| CN2011103341625A Pending CN102364709A (en) | 2011-10-29 | 2011-10-29 | Packaging Structure of High Power Light Emitting Diodes |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236489A (en) * | 2013-04-18 | 2013-08-07 | 浙江深度照明有限公司 | LED (light emitting diode) packaging structure |
| CN106920870A (en) * | 2017-02-24 | 2017-07-04 | 广东工业大学 | A kind of high-power UV LED chip eutectic weldering inverted structure |
| CN109962136A (en) * | 2017-12-14 | 2019-07-02 | 深圳市聚飞光电股份有限公司 | A kind of LED substrate, LED and LED packaging method |
| CN111208669A (en) * | 2018-11-21 | 2020-05-29 | 深圳市百柔新材料技术有限公司 | Light-emitting diode backlight plate and manufacturing method thereof |
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| CN2746538Y (en) * | 2004-11-05 | 2005-12-14 | 江珏 | Large power LED light-emitting diode |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN201359224Y (en) * | 2009-01-04 | 2009-12-09 | 杭州中宙光电股份有限公司 | Module for high-power COB-packed LED road lamps |
| CN101728466A (en) * | 2008-10-29 | 2010-06-09 | 先进开发光电股份有限公司 | Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof |
| CN101963295A (en) * | 2010-07-07 | 2011-02-02 | 杨东佐 | LED integrated structure and manufacturing method, lamp, display screen, backlight device, projection device, injection mold for molding plastic parts |
-
2011
- 2011-10-29 CN CN2011103341625A patent/CN102364709A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2746538Y (en) * | 2004-11-05 | 2005-12-14 | 江珏 | Large power LED light-emitting diode |
| CN101728466A (en) * | 2008-10-29 | 2010-06-09 | 先进开发光电股份有限公司 | Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof |
| CN101436637A (en) * | 2008-12-16 | 2009-05-20 | 王海军 | High-efficiency heat-dissipating luminous high-power LED packaging structure |
| CN201359224Y (en) * | 2009-01-04 | 2009-12-09 | 杭州中宙光电股份有限公司 | Module for high-power COB-packed LED road lamps |
| CN101963295A (en) * | 2010-07-07 | 2011-02-02 | 杨东佐 | LED integrated structure and manufacturing method, lamp, display screen, backlight device, projection device, injection mold for molding plastic parts |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236489A (en) * | 2013-04-18 | 2013-08-07 | 浙江深度照明有限公司 | LED (light emitting diode) packaging structure |
| CN106920870A (en) * | 2017-02-24 | 2017-07-04 | 广东工业大学 | A kind of high-power UV LED chip eutectic weldering inverted structure |
| CN106920870B (en) * | 2017-02-24 | 2023-05-16 | 广东工业大学 | High-power ultraviolet LED chip eutectic bonding flip-chip structure |
| CN109962136A (en) * | 2017-12-14 | 2019-07-02 | 深圳市聚飞光电股份有限公司 | A kind of LED substrate, LED and LED packaging method |
| CN111208669A (en) * | 2018-11-21 | 2020-05-29 | 深圳市百柔新材料技术有限公司 | Light-emitting diode backlight plate and manufacturing method thereof |
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Application publication date: 20120229 |