CN108011027A - LED encapsulation structure and its method - Google Patents

LED encapsulation structure and its method Download PDF

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Publication number
CN108011027A
CN108011027A CN201711217464.8A CN201711217464A CN108011027A CN 108011027 A CN108011027 A CN 108011027A CN 201711217464 A CN201711217464 A CN 201711217464A CN 108011027 A CN108011027 A CN 108011027A
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China
Prior art keywords
silica gel
layer
lens jacket
heat
radiating substrate
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Pending
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CN201711217464.8A
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Chinese (zh)
Inventor
张亮
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Xian Cresun Innovation Technology Co Ltd
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Xian Cresun Innovation Technology Co Ltd
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Priority to CN201711217464.8A priority Critical patent/CN108011027A/en
Publication of CN108011027A publication Critical patent/CN108011027A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Abstract

The present invention relates to a kind of LED encapsulation structure and its method, this method includes：Choose heat-radiating substrate and stent；LED chip is welded in heat-radiating substrate；The first lens jacket is prepared in LED chip；The first silica gel is applied on the first lens jacket and forms the first layer of silica gel；The second lens jacket is prepared in the first layer of silica gel；The second silica gel is applied on the second lens jacket and forms the second layer of silica gel.LED encapsulation method provided by the invention is on light source using the sandwich construction of the first lens jacket, the first layer of silica gel, the second lens jacket and the second layer of silica gel；Using the characteristics of variety classes silica gel refractive index is different in sandwich construction, lens are formed in silica gel, improves LED chip and shines the problem of scattered, the light that light source is sent more is concentrated；It can effectively suppress to be totally reflected and ensure that the light of LED chip can more shine out through encapsulating material.

Description

LED encapsulation structure and its method
Technical field
The invention belongs to LED encapsulation technologies field, more particularly to a kind of LED encapsulation structure and its method.
Background technology
Last century Mo, using GaN base material as representative Group III-V compound semiconductor blue chip field breakthrough, Bring an illumination revolution, the mark of this revolution be with large-power light-emitting diodes (Light-Emitting Diode, LED it is) semiconductor illumination technique (Solid State Lighting, SSL) of light source.
LED has the characteristics that long lifespan, luminous efficiency are high, colour rendering is good, safe and reliable, rich in color and easy to maintain. In current environmental pollution getting worse, under the background of climate warming and energy growing tension, grown up based on great power LED Semiconductor illumination technique has been acknowledged as one of 21 century high-tech sector most with prospects.This is shone from coal gas After bright, incandescent lamp and fluorescent lamp, the mankind illuminate a quantum leap in history, improve the lighting quality of human lives rapidly.
Now, LED produces white light by the way of GaN base blue light wick adds yellow fluorescence more, to realize illumination, this side Formula has following problem.
1st, at present, chip majority is packaged on thin heat dissipation metal substrate, due to heat dissipation metal substrate is relatively thin, thermal capacitance compared with It is small, and be easily deformed, cause it to contact defective tightness with heat sink bottom surface and influence heat dissipation effect.
2nd, since the light that LED light source is sent generally is distributed in divergence expression, i.e. lambertian distribution, this causes light source brightness of illumination not It is enough to concentrate, generally require and carry out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion, which increase production Cost.
The content of the invention
In order to improve the working performance of LED chip, the present invention provides a kind of LED encapsulation structure and its method；The present invention Technical problems to be solved are achieved through the following technical solutions：
The embodiment provides a kind of LED encapsulation method, including：
S11, choose heat-radiating substrate and stent；
S12, by LED chip be welded in the heat-radiating substrate；
S13, prepare the first lens jacket in the LED chip；
S14, apply the first silica gel the first layer of silica gel of formation on first lens jacket；
S15, prepare the second lens jacket in first layer of silica gel；
S16, apply the second silica gel the second layer of silica gel of formation on second lens jacket.
In one embodiment of the invention, S11 includes：
S121, cleaning simultaneously dry the stent and the heat-radiating substrate；
S122, using solder reflow process, the LED chip is welded in the heat-radiating substrate；And by the heat dissipation base Plate is installed on the stent.
In one embodiment of the invention, the heat-radiating substrate is provided with some circular holes；Wherein, the circular hole is described in Heat-radiating substrate width and parallel with the heat-radiating substrate plane.
In one embodiment of the invention, S13 includes：
S131, apply the 3rd silica gel in the LED chip；
S132, using the first hemispherical prepare some first hemispherical lens on the 3rd silica gel；
Remove the first hemispherical after S133, band mould baking and form first lens jacket.
In one embodiment of the invention, S14 includes：
S141, apply first silica gel on first lens jacket；
First layer of silica gel is formed after S142, baking.
In one embodiment of the invention, S15 includes：
S151, apply the 4th silica gel in first layer of silica gel；
S152, using the second hemispherical prepare some second hemispherical lens on the 4th silica gel；
Remove the second hemispherical after S153, band mould baking and form second lens jacket.
In one embodiment of the invention, S16 includes：
S161, apply second silica gel on second lens jacket；
S162, using the 3rd hemispherical form outer layer hemisphere on second silica gel；
Remove the 3rd hemispherical after S163, band mould baking and form second layer of silica gel；
S164, at a temperature of 100-150 DEG C, encapsulated when baking 4-12 is small with completing the LED.
In one embodiment of the invention, it is rectangular to include several for first lens jacket and second lens jacket Or the silica gel hemisphere of diamond shape distribution.
In one embodiment of the invention, the LED chip includes red LED chip, green LED chip and blue light LED chip.
Compared with prior art, the invention has the advantages that：
1st, LED encapsulation structure and its method provided by the invention, on its heat-radiating substrate by the way of intermediate throughholes, strong While degree has almost no change, heat-radiating substrate cost is reduced, meanwhile, increase the passage of air circulation, utilize the heat of air Convection current, adds heat dissipation effect；
2nd, LED encapsulation structure and its method provided by the invention, on light source using the first lens jacket, the first layer of silica gel, The sandwich construction of second lens jacket and the second layer of silica gel；Using the characteristics of variety classes silica gel refractive index is different in sandwich construction, Lens are formed in silica gel, improves LED chip and shines the problem of scattered, the light that light source is sent more is concentrated；
3rd, silica gel hemisphere provided by the invention can be with rectangular evenly distributed, or diamond array.It can ensure light source Light is uniformly distributed in concentration zones.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this For the those of ordinary skill of field, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
By the detailed description below with reference to attached drawing, other side of the invention and feature become obvious.But it should know Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they only try hard to concept Ground illustrates structure and flow described herein.
Fig. 1 is the LED encapsulation method flow diagram that one embodiment of the invention provides；
Fig. 2 is the heat-radiating substrate schematic diagram for the LED encapsulation that one embodiment of the invention provides；
Fig. 3 is the LED encapsulation structure schematic diagram that another embodiment of the present invention provides；
Fig. 4 is the LED encapsulation method flow chart that yet another embodiment of the invention provides；
Fig. 5 is three layers of lens LED encapsulation structure schematic diagram that yet another embodiment of the invention provides；
Fig. 6 is four layers of lens LED encapsulation structure schematic diagram that yet another embodiment of the invention provides.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is the LED encapsulation method flow diagram that one embodiment of the invention provides, including：
S11, choose heat-radiating substrate and stent；
S12, by LED chip be welded in the heat-radiating substrate；
S13, prepare the first lens jacket in the LED chip；
S14, apply the first silica gel the first layer of silica gel of formation on first lens jacket；
S15, prepare the second lens jacket in first layer of silica gel；
S16, apply the second silica gel the second layer of silica gel of formation on second lens jacket.
Preferably, S21 can include：
S121, cleaning simultaneously dry the stent and the heat-radiating substrate；
S122, using solder reflow process, the LED chip is welded in the heat-radiating substrate；And by the heat dissipation base Plate is installed on the stent.
Specifically, the refractive index of the first layer of silica gel is less than the second layer of silica gel and the refractive index of the first lens jacket, the second lens The refractive index of layer is more than the refractive index of the first layer of silica gel and the second layer of silica gel；It can effectively suppress to be totally reflected and ensure LED chip Light can more shine out through encapsulating material.
Specifically, Fig. 2, the heat-radiating substrate schematic diagram for the LED encapsulation that Fig. 2 provides for one embodiment of the invention, institute are referred to State heat-radiating substrate and be provided with some circular holes；Wherein, the circular hole along the heat-radiating substrate width and with the heat-radiating substrate Plane is parallel.
Preferably, the heat-radiating substrate uses iron material, and the Circularhole diameter in heat-radiating substrate is 0.2-0.4 millimeter, circular hole 0.5-10 millimeters of spacing.
Preferably, S13 can include：
S131, apply the 3rd silica gel in the LED chip；
S132, using the first hemispherical prepare some first hemispherical lens on the 3rd silica gel；
Remove the first hemispherical after S133, band mould baking and form first lens jacket.
Wherein, first lens jacket includes some silica gel hemisphere and connects the silica gel strip of the silica gel hemisphere.
Preferably, S14 can include：
S141, apply first silica gel on first lens jacket；
First layer of silica gel is formed after S142, baking.
Further, S15 can include：
S151, apply the 4th silica gel in first layer of silica gel；
S152, using the second hemispherical prepare some second hemispherical lens on the 4th silica gel；
Remove the second hemispherical after S153, band mould baking and form second lens jacket.
Wherein, second lens jacket includes some silica gel hemisphere and connects the silica gel strip of the silica gel hemisphere.
Preferably, S16 can include：
S161, apply second silica gel on second lens jacket；
S162, using the 3rd hemispherical form outer layer hemisphere on second silica gel；
Remove the 3rd hemispherical after S163, band mould baking and form second layer of silica gel；
S164, at a temperature of 100-150 DEG C, encapsulated when baking 4-12 is small with completing the LED.
Specifically, first lens jacket and second lens jacket include the silica gel of several rectangular or diamond shape distributions Hemisphere.
Preferably, first lens jacket, the first layer of silica gel, the second lens jacket and the second layer of silica gel do not contain fluorescence Powder.
Further, the LED chip includes red LED chip, green LED chip and blue-light LED chip.Wherein, adopt Undoped fluorescent powder with three-primary color LED chip, can be adulterated to avoid fluorescent powder it is uneven cause light extraction uneven and light emission rate under The problem of drop.
LED encapsulation structure and its method provided in this embodiment, by the way of intermediate throughholes are used on heat-radiating substrate, solution Determine since heat dissipation metal substrate is relatively thin, thermal capacitance is smaller, and be easily deformed, caused it to contact defective tightness with heat sink bottom surface And the problem of influencing heat dissipation effect；Meanwhile while intensity has almost no change, heat-radiating substrate cost is reduced, increase is empty The passage that air-flow leads to, using the thermal convection current of air, adds heat dissipation effect.
Embodiment two
Further, Fig. 3, the LED encapsulation structure schematic diagram that Fig. 3 provides for another embodiment of the present invention, this reality be refer to The LED encapsulation structure for applying example offer is prepared by the method that above-described embodiment one provides and formed.Specifically, LED encapsulation structure includes： Include LED bottom plates 21, the first lens jacket 22, the first layer of silica gel 23, the second lens jacket 24 and the second layer of silica gel successively from lower to upper 25。
Preferably, LED bottom plates 21 include heat-radiating substrate and the LED chip being arranged on heat-radiating substrate.
Further, the first lens jacket 22 and the second lens jacket 24 include several equally distributed silicon of rectangular or diamond shape Glue hemisphere, wherein, silica gel hemisphere can also need to be if it were not for being uniformly distributed according to technique.
Specifically, the second layer of silica gel 25 covers whole LED chip for hemispherical dome structure.
Preferably, in the LED encapsulation structure, the first lens jacket 22 and the second lens jacket 24 use polycarbonate or poly- first The material such as base methacrylate or glass；First layer of silica gel 23 can use modified epoxy or organosilicon material etc.；Second Layer of silica gel 25 preferably use methyl index of refraction for 1.41 silicon rubber, phenyl high index of refraction (such as 1.54) organic silicon rubber Deng.
Further, in the LED encapsulation structure the first lens jacket 22 be considered as be preferably for " planoconvex lens ", its focal length Meet formula 1.：
R1/(n2-n1)；------------①
Wherein, n1For the refractive index of silica gel in the first layer of silica gel 23, n2To form the folding of the silica gel material of the first lens jacket 22 Penetrate rate, R1For the radius of silica-gel sphere in the first lens jacket 22；
Second lens jacket, 24 focal length is preferably to meet formula 2.：
R2/(n4-n3)；------------②
Wherein, n3For the refractive index of silica gel in the second layer of silica gel 25, n4To form the folding of the silica gel material of the second lens jacket 24 Penetrate rate, R2For the radius of silica-gel sphere in the second lens jacket 24.It could so ensure the light emission rate highest of LED well.
In addition, being experimentally confirmed, the other specification of the optimal LED of light emission rate further includes：
The thickness H of first layer of silica gel 231It should meet formula 3.：
R1/2+2×R1/(n2-n1)≥H1≥R1/2；----------------③
Wherein, H1For the thickness of the first layer of silica gel 23；
4. the thickness of second layer of silica gel 25 should meet formula：
R2/2+2×R2/(n4-n3)≥H2≥R2/2；----------------④
Wherein, H2For the thickness of the second layer of silica gel 25.Certainly, the thickness of the first layer of silica gel 23 and the second layer of silica gel 25 is not yet Can be too thick, it is too thick also to influence its light emission rate.
Preferably, R1=R2=R, and R is preferably 5 μm~100 μm, and ball spacing A is preferably 5 μm~100 μm.LED bottom plates Width be preferably：W=5mil (1mil=1/45mm), its thickness D are preferably 90 μm~140 μm.
LED encapsulation structure and its method provided in this embodiment, it is arranged in a crossed manner using multilayer lens jacket and multilayer layer of silica gel Sandwich construction；The refractive index of layer of silica gel increases successively in sandwich construction, and the refractive index of each lens jacket is more than its adjacent silicon The refractive index of glue-line, improves LED chip and shines the problem of scattered, the light that light source is sent more is concentrated；It is also ensured that LED chip can more shine out through encapsulating material.
Embodiment three
Fig. 4 is refer to, Fig. 4 is the LED encapsulation method flow chart that yet another embodiment of the invention provides, and the present embodiment is above-mentioned On the basis of embodiment, LED encapsulation method of the invention is described in detail as follows.Specifically, include the following steps：
S21, choose LED chip；
S22, choose heat-radiating substrate and stent；
S23, by the LED chip be welded in the heat-radiating substrate；
S24, in the LED chip successively crossbar system for multiple lens regions and layer of silica gel；
S25, at a temperature of 100-150 DEG C, encapsulated when baking 4-12 is small with completing the LED.
Specifically, S22 can include：
S221, choose stent and heat-radiating substrate；
S222, clean the stent and the heat-radiating substrate；
S223, toast the stent and the heat-radiating substrate and do.
Preferably, the heat-radiating substrate uses round-meshed iron material；
Wherein, by the way of middle tiltedly circular groove, while intensity has almost no change, reduce heat-radiating substrate into This；Increase the passage of air circulation at the same time, using the thermal convection current speed of stack effect lifting air, add heat dissipation effect.
Specifically, S23 can include：
S231, printing solder and the die bond for examining the solder：
S232, using solder reflow process, the LED chip is welded in the heat-radiating substrate, and by the heat dissipation base Plate is installed on the stent.
Specifically, S24 can include：
S241, prepare the first lens jacket in the LED chip；
S242, apply the first silica gel the first layer of silica gel of formation on first lens jacket；
S243, prepare the second lens jacket in first layer of silica gel；
S244, apply the second silica gel the second layer of silica gel of formation on second lens jacket.
Further, can also include after S244：
S245, prepare the 3rd lens jacket in second layer of silica gel；
S246, apply the 3rd silica gel the 3rd layer of silica gel of formation on the 3rd lens jacket.
Preferably, can also include after S246：
S247, prepare the 4th lens jacket in the 3rd layer of silica gel；
S248, apply the 4th silica gel the 4th layer of silica gel of formation on the 4th lens jacket.
Preferably, when second layer of silica gel is the outermost layer of LED encapsulation structure, S244 can include：
S2441, apply second silica gel on second lens jacket；
S2442, using hemispherical form outer layer hemisphere on second silica gel；
Remove mould after S2443, band mould baking and form second layer of silica gel.
Preferably, Fig. 5 is refer to, Fig. 5 is three layers of lens LED encapsulation structure signal that yet another embodiment of the invention provides Figure, when the 3rd layer of silica gel is the outermost layer of LED encapsulation structure, S246 can include：
S2461, apply the 3rd silica gel on the 3rd lens jacket；
S2462, using hemispherical form outer layer hemisphere on the 3rd silica gel；
Remove mould after S2463, band mould baking and form the 3rd layer of silica gel.
Preferably, Fig. 6 is refer to, Fig. 6 is four layers of lens LED encapsulation structure signal that yet another embodiment of the invention provides Figure, when the 4th layer of silica gel is the outermost layer of LED encapsulation structure, S248 can include：
S2481, apply the 4th silica gel on the 4th lens jacket；
S2482, using hemispherical form outer layer hemisphere on the 4th silica gel；
Remove mould after S2483, band mould baking and form the 4th layer of silica gel.
Specifically, further included after S25：Packaging is detected to the LED encapsulation structure.
In conclusion specific case used herein is set forth the principle of the present invention and embodiment, the above The explanation of embodiment is only intended to help and understands the present invention and its core concept；Meanwhile for those of ordinary skill in the art, According to the thought of the present invention, there will be changes in specific embodiments and applications, in conclusion in this specification Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.

Claims (10)

  1. A kind of 1. LED encapsulation method, it is characterised in that including：
    S11, choose heat-radiating substrate；
    S12, by LED chip be welded in the heat-radiating substrate；
    S13, prepare the first lens jacket in the LED chip；
    S14, apply the first silica gel the first layer of silica gel of formation on first lens jacket；
    S15, prepare the second lens jacket in first layer of silica gel；
    S16, apply the second silica gel the second layer of silica gel of formation on second lens jacket.
  2. 2. according to the method described in claim 1, it is characterized in that, S11 includes：
    S121, cleaning simultaneously dry the heat-radiating substrate；
    S122, using solder reflow process, the LED chip is welded in the heat-radiating substrate；And the heat-radiating substrate is pacified Loaded on stent.
  3. 3. method according to claim 1 or 2, it is characterised in that the heat-radiating substrate is provided with some circular holes；Wherein, The circular hole is along the heat-radiating substrate width and parallel with the heat-radiating substrate plane.
  4. 4. according to the method described in claim 1, it is characterized in that, S13 includes：
    S131, apply the 3rd silica gel in the LED chip；
    S132, using the first hemispherical prepare some first hemispherical lens on the 3rd silica gel；
    Remove first hemispherical after S133, band mould baking and form first lens jacket.
  5. 5. according to the method described in claim 1, it is characterized in that, S14 includes：
    S141, apply first silica gel on first lens jacket；
    First layer of silica gel is formed after S142, baking.
  6. 6. according to the method described in claim 1, it is characterized in that, S15 includes：
    S151, apply the 4th silica gel in first layer of silica gel；
    S152, using the second hemispherical prepare some second hemispherical lens on the 4th silica gel；
    Remove second hemispherical after S153, band mould baking and form second lens jacket.
  7. 7. according to the method described in claim 1, it is characterized in that, S16 includes：
    S161, apply second silica gel on second lens jacket；
    S162, using the 3rd hemispherical form outer layer hemisphere on second silica gel；
    Remove the 3rd hemispherical after S163, band mould baking and form second layer of silica gel；
    S164, at a temperature of 100-150 DEG C, baking 4-12 it is small when with complete LED encapsulation.
  8. 8. if according to the method described in claim 1, it is characterized in that, first lens jacket and second lens jacket include The silica gel hemisphere of dry rectangular or diamond shape distribution.
  9. 9. according to the method described in claim 1, it is characterized in that, the LED chip includes red LED chip, green light LED core Piece and blue-light LED chip.
  10. 10. a kind of LED encapsulation structure, it is characterised in that the encapsulating structure is by claim 1~9 any one of them method Prepare and formed.
CN201711217464.8A 2017-11-28 2017-11-28 LED encapsulation structure and its method Pending CN108011027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711217464.8A CN108011027A (en) 2017-11-28 2017-11-28 LED encapsulation structure and its method

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Application Number Priority Date Filing Date Title
CN201711217464.8A CN108011027A (en) 2017-11-28 2017-11-28 LED encapsulation structure and its method

Publications (1)

Publication Number Publication Date
CN108011027A true CN108011027A (en) 2018-05-08

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CN101556023A (en) * 2009-05-14 2009-10-14 上海广电光电子有限公司 LED light source with wide-angle lens
JP2010272858A (en) * 2009-04-22 2010-12-02 Ccs Inc Light source device for exposure machine
US20120217863A1 (en) * 2011-02-25 2012-08-30 Semiconductor Energy Laboratory Co., Ltd. Lighting device and method for manufacturing the same
CN104396012A (en) * 2012-05-02 2015-03-04 贺利氏特种光源有限责任公司 Luminaire with leds and cylindrical lens
WO2016150837A1 (en) * 2015-03-20 2016-09-29 Osram Opto Semiconductors Gmbh Optoelectronic lighting device and method for the production of an optoelectronic lighting device

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Publication number Priority date Publication date Assignee Title
CN201117676Y (en) * 2007-08-17 2008-09-17 广东昭信光电科技有限公司 Integrated microstructure high power light-emitting diode packaging structure
JP2010272858A (en) * 2009-04-22 2010-12-02 Ccs Inc Light source device for exposure machine
CN101556023A (en) * 2009-05-14 2009-10-14 上海广电光电子有限公司 LED light source with wide-angle lens
US20120217863A1 (en) * 2011-02-25 2012-08-30 Semiconductor Energy Laboratory Co., Ltd. Lighting device and method for manufacturing the same
CN104396012A (en) * 2012-05-02 2015-03-04 贺利氏特种光源有限责任公司 Luminaire with leds and cylindrical lens
WO2016150837A1 (en) * 2015-03-20 2016-09-29 Osram Opto Semiconductors Gmbh Optoelectronic lighting device and method for the production of an optoelectronic lighting device

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Application publication date: 20180508