CN107833949A - LED encapsulation structure and its method - Google Patents
LED encapsulation structure and its method Download PDFInfo
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- CN107833949A CN107833949A CN201711214856.9A CN201711214856A CN107833949A CN 107833949 A CN107833949 A CN 107833949A CN 201711214856 A CN201711214856 A CN 201711214856A CN 107833949 A CN107833949 A CN 107833949A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 137
- 239000000741 silica gel Substances 0.000 claims abstract description 137
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 abstract description 6
- 229960001866 silicon dioxide Drugs 0.000 description 109
- 230000000694 effects Effects 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 240000001085 Trapa natans Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation structure and its method, this method includes：S11, choose blue-light LED chip；S12, choose heat-radiating substrate；S13, LED chip is welded in the heat-radiating substrate；S14, the first lens jacket is prepared in the LED chip；S15, on first lens jacket successively crossbar system for multiple layer of silica gel and lens region；S16, prepare outer layer layer of silica gel.LED encapsulation method provided by the invention is on light source using multilayer lens region and the sandwich construction of layer of silica gel；Increased successively using the refractive index of layer of silica gel in sandwich construction, the refractive index of lens jacket is more than the refractive index of its adjacent layer of silica gel, improves the problem of LED chip is luminous scattered, the light that light source is sent more is concentrated；More being shone out through encapsulating material for LED chip can be ensured.
Description
Technical field
The invention belongs to LED encapsulation technologies field, more particularly to a kind of LED encapsulation structure and its method.
Background technology
Last century Mo, using GaN base material as representative Group III-V compound semiconductor blue chip field breakthrough,
Bring an illumination revolution, the mark of this revolution be with large-power light-emitting diodes (Light-Emitting Diode,
LED it is) semiconductor illumination technique (Solid State Lighting, SSL) of light source.
LED has the characteristics of long lifespan, luminous efficiency are high, colour rendering is good, safe and reliable, rich in color and easy to maintain.
In current environmental pollution getting worse, under the background of climate warming and energy growing tension, grown up based on great power LED
Semiconductor illumination technique has been acknowledged as one of 21 century high-tech sector most with prospects.This is shone from coal gas
After bright, incandescent lamp and fluorescent lamp, the mankind illuminate a quantum leap in history, improve the lighting quality of human lives rapidly.
Now, LED produces white light by the way of GaN base blue light wick adds yellow fluorescence more, to realize illumination, this side
Formula has following problem.
1st, at present, chip majority is packaged on thin heat dissipation metal substrate, due to heat dissipation metal substrate is relatively thin, thermal capacitance compared with
It is small, and be easily deformed, cause it to contact defective tightness with fin bottom surface and influence radiating effect.
2nd, because the light that LED light source is sent typically is distributed in divergence expression, i.e. lambertian distribution, this causes light source brightness of illumination not
It is enough to concentrate, generally require and carry out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion, which increase production
Cost.
The content of the invention
In order to improve the service behaviour of LED chip, the invention provides a kind of LED encapsulation structure and its method；The present invention
Technical problems to be solved are achieved through the following technical solutions：
The embodiment provides a kind of LED encapsulation method, including：
S11, choose LED chip；
S12, choose heat-radiating substrate；
S13, LED chip is welded in the heat-radiating substrate；
S14, the first lens jacket is prepared in the LED chip；
S15, on first lens jacket successively crossbar system for multiple layer of silica gel and lens region；
S16, prepare outer layer layer of silica gel.
In one embodiment of the invention, the heat-radiating substrate is aluminum, wherein, if the heat-radiating substrate is provided with
Dry circular groove, the circular groove is along the heat-radiating substrate width and parallel with the heat-radiating substrate plane.
In one embodiment of the invention, S14 includes：
S141, the first silica gel is applied in the LED chip；
S142, using the first hemispherical some first hemispherical lens are prepared on first silica gel；
Remove the first hemispherical after S143, band mould baking and form first lens jacket.
In one embodiment of the invention, S15 includes：
S151, apply the second silica gel on first lens jacket；
The first layer of silica gel is formed after S152, baking；
S153, the 3rd silica gel is applied in first layer of silica gel；
S154, using the second hemispherical prepare some second hemispherical lens on the 3rd silica gel；
Remove the second hemispherical after S155, band mould baking and form the second lens jacket.
In one embodiment of the invention, S16 includes：
S161, outer layer silica gel is applied in first layer of silica gel and second lens jacket；
S162, outer layer hemisphere formed on the outer layer silica gel using the 3rd hemispherical；
Remove the 3rd hemispherical after S163, band mould baking and form the outer layer layer of silica gel；
S164, at a temperature of 100-150 DEG C, baking 4-12 hours with complete LED encapsulation.
In one embodiment of the invention, also include after S155：
S156, the 4th silica gel is applied on second lens jacket；
The second layer of silica gel is formed after S157, baking；
S158, the 5th silica gel is applied in second layer of silica gel；
S159, using the 4th hemispherical prepare some 3rd hemispherical lens on the 5th silica gel；
Remove the 4th hemispherical after S1510, band mould baking and form the 3rd lens jacket.
In one embodiment of the invention, also include after S1510：
S1511, the 6th silica gel is applied on the 3rd lens jacket；
The 3rd layer of silica gel is formed after S1512, baking；
S1513, the 7th silica gel is applied in the 3rd layer of silica gel；
S1514, using the 5th hemispherical prepare some 4th hemispherical lens on the 7th silica gel；
Remove the 5th hemispherical after S1515, band mould baking and form the 4th lens jacket.
In one embodiment of the invention, the LED chip is blue-light LED chip；Including：Sapphire Substrate and successively
GaN stabilized zones, GaN cushions, N types GaN layer, InGaN/GaN multi-quantum pit structures, the P being laminated in the Sapphire Substrate
Type AlGaN barrier layers and p-type GaN layers.
In one embodiment of the invention, first lens jacket and the lens region include several rectangular or water chestnuts
The silica gel hemisphere of shape distribution.
In one embodiment of the invention, first lens jacket is free of fluorescent material；It is the multiple layer of silica gel, described
Jing Qu and the outer layer layer of silica gel contain yellow fluorescent powder.
Compared with prior art, the invention has the advantages that：
1st, LED encapsulation structure and its method provided by the invention, using on heat-radiating substrate use with circular groove thick aluminium
Expect heat-radiating substrate, by the way of circular groove, while intensity has almost no change, reduce aluminium cost；Using circular groove
Mode, it is not easy to increase the passage of air circulation while deformation, using the thermal convection current of air, add radiating effect.
2nd, LED encapsulation structure and its method provided by the invention, the lens jacket and silica gel of sandwich construction are used on light source
Layer；Using lens the characteristics of variety classes silica gel refractive index difference, are formed in sandwich construction in silica gel, improve LED chip hair
The problem of light disperses, the light that light source is sent is set more to concentrate.
3rd, silica gel hemisphere provided by the invention can be with rectangular evenly distributed, or diamond array.Light source can be ensured
Light is uniformly distributed in concentration zones.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other
Accompanying drawing.
By the detailed description below with reference to accompanying drawing, other side of the invention and feature become obvious.But it should know
Road, the accompanying drawing is only the purpose design explained, not as the restriction of the scope of the present invention, because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale accompanying drawing, they only try hard to concept
Ground illustrates structure and flow described herein.
Fig. 1 is the LED encapsulation method schematic flow sheet that one embodiment of the invention provides；
Fig. 2 is the heat-radiating substrate schematic diagram for the LED encapsulation that one embodiment of the invention provides；
Fig. 3 is the structural representation for the LED chip that one embodiment of the invention provides；
Fig. 4 is the LED encapsulation structure schematic diagram that another embodiment of the present invention provides；
Fig. 5 is the LED encapsulation method flow chart that yet another embodiment of the invention provides；
Fig. 6 is three layers of lens LED encapsulation structure schematic diagram that yet another embodiment of the invention provides；
Fig. 7 is four layers of lens LED encapsulation structure schematic diagram that yet another embodiment of the invention provides.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is the LED encapsulation method schematic flow sheet that one embodiment of the invention provides, including：
S11, choose LED chip；
S12, choose heat-radiating substrate；
S13, LED chip is welded in the heat-radiating substrate；
S14, the first lens jacket is prepared in the LED chip；
S15, on first lens jacket successively crossbar system for multiple layer of silica gel and lens region；
S16, prepare outer layer layer of silica gel.
Specifically, the refractive index of layer of silica gel increases successively in sandwich construction, can effectively suppress the total reflection of light, lens
The refractive index of layer is more than the refractive index of its adjacent layer of silica gel, it is ensured that LED chip more can shine through encapsulating material
It is shot out.
Specifically, Fig. 2, the heat-radiating substrate schematic diagram for the LED encapsulation that Fig. 2 provides for one embodiment of the invention, institute are referred to
It is aluminum to state heat-radiating substrate, wherein, heat-radiating substrate thickness is 0.5-10 millimeters.
Further, the heat-radiating substrate is provided with some circular grooves, the circular groove along the heat-radiating substrate width and
It is parallel with the heat-radiating substrate plane；Wherein, a diameter of 0.3--2 millimeters of circular groove, spacing 0.5-10 millimeters.
Preferably, S14 includes：
S141, the first silica gel is applied in the LED chip；
S142, using the first hemispherical some first hemispherical lens are prepared on first silica gel；
Remove the first hemispherical after S143, band mould baking and form first lens jacket.
Preferably, S15 includes：
S151, apply the second silica gel on first lens jacket；
The first layer of silica gel is formed after S152, baking；
S153, the 3rd silica gel is applied in first layer of silica gel；
S154, using the second hemispherical prepare some second hemispherical lens on the 3rd silica gel；
Remove the second hemispherical after S155, band mould baking and form the second lens jacket.
Preferably, S16 includes：
S161, outer layer silica gel is applied in first layer of silica gel and second lens jacket；
S162, outer layer hemisphere formed on the outer layer silica gel using the 3rd hemispherical；
Remove the 3rd hemispherical after S163, band mould baking and form the outer layer layer of silica gel；
S164, at a temperature of 100-150 DEG C, baking 4-12 hours with complete LED encapsulation.
Preferably, also include after S155：
S156, the 4th silica gel is applied on second lens jacket；
The second layer of silica gel is formed after S157, baking；
S158, the 5th silica gel is applied in second layer of silica gel；
S159, using the 4th hemispherical prepare some 3rd hemispherical lens on the 5th silica gel；
Remove the 4th hemispherical after S1510, band mould baking and form the 3rd lens jacket.
Further, also include after S1510：
S1511, the 6th silica gel is applied on the 3rd lens jacket；
The 3rd layer of silica gel is formed after S1512, baking；
S1513, the 7th silica gel is applied in the 3rd layer of silica gel；
S1514, using the 5th hemispherical prepare some 4th hemispherical lens on the 7th silica gel；
Remove the 5th hemispherical after S1515, band mould baking and form the 4th lens jacket.
Specifically, Fig. 3, the structural representation for the LED chip that Fig. 3 provides for one embodiment of the invention, the LED are referred to
Chip is blue-light LED chip；Including：Sapphire Substrate 101 and stack gradually in the GaN stabilized zones in the Sapphire Substrate
102nd, GaN cushions 103, N-type GaN layer 104, InGaN/GaN multi-quantum pit structures 105, p-type AlGaN barrier layers 106 and P
Type GaN layers 107.
Further, the LED chip also includes positive electrode 108 and negative electrode 109, wherein, the positive electrode is arranged at
On the p-type GaN layer surface, the negative electrode 109 is arranged on the N-type GaN layer surface.
Wherein, first lens jacket and the lens region include the silica gel hemisphere of several rectangular or rhombus distributions.
Preferably, the silica gel contacted with the LED chip and the heat-radiating substrate is free of fluorescent material, with the LED chip
The silica gel being not in contact with the heat-radiating substrate contains yellow fluorescent powder；
Specifically, first lens jacket is free of fluorescent material；The multiple layer of silica gel, the lens region and the outer layer silicon
Glue-line contains yellow fluorescent powder.
The present embodiment provide LED encapsulation structure and its method, using on heat-radiating substrate use with circular groove thick aluminium
Expect heat-radiating substrate, solve because heat dissipation metal substrate is relatively thin, thermal capacitance is smaller, and be easily deformed, cause itself and fin bottom
The problem of face contacts defective tightness and influences radiating effect；Big, the good heat conduction effect using thick aluminium substrate thermal capacitance；Thick aluminium base
Plate, it is not easy to deform, contacted with heat abstractor closely, good heat dissipation effect；Meanwhile by the way of circular groove, almost do not have in intensity
While changing, aluminium cost is reduced；By the way of circular groove, increase the passage of air circulation, utilize the hot right of air
Stream, adds radiating effect.
Embodiment two
Further, Fig. 4, the LED encapsulation structure schematic diagram that Fig. 4 provides for another embodiment of the present invention, this reality be refer to
The method that is there is provided by above-described embodiment one of LED encapsulation structure for applying example offer is prepared and formed.Specifically, LED encapsulation structure includes：
Include LED bottom plates 21, the first lens jacket 22, the first layer of silica gel 23, the second lens jacket 24 and the second layer of silica gel successively from lower to upper
25。
Preferably, LED bottom plates 21 include heat-radiating substrate and the LED chip being arranged on heat-radiating substrate.
Further, the first lens jacket 22 and the second lens jacket 24 include several equally distributed silicon of rectangular or rhombus
Glue hemisphere, wherein, silica gel hemisphere can also need to be if it were not for being uniformly distributed according to technique.
Specifically, the second layer of silica gel 25 is that hemispherical dome structure covers whole LED chip.
Preferably, in the LED encapsulation structure, the first lens jacket 22 and the second lens jacket 24 use polycarbonate or poly- first
The material such as base methacrylate or glass；First layer of silica gel 23 can use modified epoxy or organosilicon material etc.；Second
Layer of silica gel 25 preferably use methyl index of refraction for 1.41 silicon rubber, phenyl high index of refraction (such as 1.54) organic silicon rubber
Deng.
Further, in the LED encapsulation structure the first lens jacket 22 be considered as be preferably for " planoconvex lens ", its focal length
Meet formula 1.：
R1/(n2-n1)；------------①
Wherein, n1For the refractive index of silica gel in the first layer of silica gel 23, n2To form the silica gel material of the first lens jacket 22
Refractive index, R1For the radius of silica-gel sphere in the first lens jacket 22；
The focal length of second lens jacket 24 is preferably to meet formula 2.：
R2/(n4-n3)；------------②
Wherein, n3For the refractive index of silica gel in the second layer of silica gel 25, n4To form the silica gel material of the second lens jacket 24
Refractive index, R2For the radius of silica-gel sphere in the second lens jacket 24.LED light emission rate highest could so be ensured well.
In addition, being experimentally confirmed, the optimal LED of light emission rate other specification also includes：
The thickness H of first layer of silica gel 231Formula should be met 3.：
R1/2+2×R1/(n2-n1)≥H1≥R1/2；----------------③
Wherein, H1For the thickness of the first layer of silica gel 23；
4. the thickness of second layer of silica gel 25 should meet formula：
R2/2+2×R2/(n4-n3)≥H2≥R2/2；----------------④
Wherein, H2For the thickness of the second layer of silica gel 25.Certainly, the thickness of the first layer of silica gel 23 and the second layer of silica gel 25 is not yet
Can be too thick, it is too thick also to influence its light emission rate.
Preferably, R1=R2=R, and R is preferably 5 μm~100 μm, and ball spacing A is preferably 5 μm~100 μm.LED bottoms
The width of plate 21 is preferably：W=5mil (1mil=1/45mm), its thickness D are preferably 90 μm~140 μm.
The LED encapsulation structure and its method that the present embodiment provides, it is arranged in a crossed manner using multilayer lens jacket and multilayer layer of silica gel
Sandwich construction；Lens are formed in silica gel, improves the problem of LED chip is luminous scattered, enables the light that light source is sent more
Concentrate.
Embodiment three
Fig. 5 is refer to, Fig. 5 is the LED encapsulation method flow chart that yet another embodiment of the invention provides, and the present embodiment is above-mentioned
On the basis of embodiment, LED encapsulation method of the invention is described in detail as follows.Specifically, comprise the following steps：
S21, choose LED chip；
S22, choose heat-radiating substrate and support；
S23, the LED chip is welded in the heat-radiating substrate；
S24, in the LED chip successively crossbar system for multiple lens regions and layer of silica gel；
S25, at a temperature of 100-150 DEG C, baking 4-12 hours are encapsulated with completing the LED.
Specifically, the LED chip is blue-light LED chip.
Specifically, S22 can include：
S221, choose support and heat-radiating substrate；
S222, clean the support and the heat-radiating substrate；
S223, the support and the heat-radiating substrate are toasted and done.
Preferably, the heat-radiating substrate uses the iron material with circular groove；
Wherein, by the way of circular groove, while intensity has almost no change, heat-radiating substrate cost is reduced；Simultaneously
Increase the passage of air circulation, the thermal convection current speed of air is lifted using stack effect, adds radiating effect.
Specifically, S23 can include：
S231, printing solder and the die bond for examining the solder：
S232, using solder reflow process, the LED chip is welded in the heat-radiating substrate, and by the radiating base
Plate is installed on the support.
Specifically, S24 can include：
S241, the first lens jacket is prepared in the LED chip；
S242, the first silica gel the first layer of silica gel of formation is applied on first lens jacket；
S243, prepare the second lens jacket in first layer of silica gel；
S244, the second silica gel the second layer of silica gel of formation is applied on second lens jacket.
Preferably, first lens jacket is free of fluorescent material, first layer of silica gel, second lens jacket and described
Second silica gel layer contains yellow fluorescent powder.
Further, can also include after S244：
S245, the 3rd lens jacket is prepared in second layer of silica gel；
S246, the 3rd silica gel the 3rd layer of silica gel of formation is applied on the 3rd lens jacket.
Preferably, the 3rd lens jacket and the 3rd layer of silica gel contain yellow fluorescent powder.
Preferably, can also include after S246：
S247, the 4th lens jacket is prepared in the 3rd layer of silica gel；
S248, the 4th silica gel the 4th layer of silica gel of formation is applied on the 4th lens jacket.
Preferably, the 4th lens jacket and the 4th layer of silica gel contain yellow fluorescent powder.
Preferably, when second layer of silica gel is the outermost layer of LED encapsulation structure, S244 can include：
Second silica gel is applied on S2441, second lens jacket；
S2442, outer layer hemisphere formed on second silica gel using hemispherical；
Remove mould after S2443, band mould baking and form second layer of silica gel.
Preferably, Fig. 6 is refer to, Fig. 6 is three layers of lens LED encapsulating structures signal that yet another embodiment of the invention provides
Figure, when the 3rd layer of silica gel is the outermost layer of LED encapsulation structure, S246 can include：
S2461, apply the 3rd silica gel on the 3rd lens jacket；
S2462, outer layer hemisphere formed on the 3rd silica gel using hemispherical；
Remove mould after S2463, band mould baking and form the 3rd layer of silica gel.
Preferably, Fig. 7 is refer to, Fig. 7 is four layers of lens LED encapsulating structures signal that yet another embodiment of the invention provides
Figure, when the 4th layer of silica gel is the outermost layer of LED encapsulation structure, S248 can include：
S2481, apply the 4th silica gel on the 4th lens jacket；
S2482, outer layer hemisphere formed on the 4th silica gel using hemispherical；
Remove mould after S2483, band mould baking and form the 4th layer of silica gel.
Specifically, also include after S25：Detection packaging is carried out to the LED encapsulation structure.
In summary, specific case used herein is set forth to the principle and embodiment of the present invention, the above
The explanation of embodiment is only intended to help and understands the present invention and its core concept；Meanwhile for those of ordinary skill in the art,
According to the thought of the present invention, there will be changes in specific embodiments and applications, in summary, in this specification
Appearance be should not be construed as limiting the invention, and protection scope of the present invention should be defined by appended claim.
Claims (10)
- A kind of 1. LED encapsulation method, it is characterised in that including：S11, choose blue-light LED chip；S12, choose heat-radiating substrate；S13, LED chip is welded in the heat-radiating substrate；S14, the first lens jacket is prepared in the LED chip；S15, on first lens jacket successively crossbar system for multiple layer of silica gel and lens region；S16, prepare outer layer layer of silica gel.
- 2. according to the method for claim 1, it is characterised in that the heat-radiating substrate is aluminum, wherein, the radiating base Plate is provided with some circular grooves, and the circular groove is parallel with the heat-radiating substrate plane along its length.
- 3. according to the method for claim 1, it is characterised in that S14 includes：S141, the first silica gel is applied in the LED chip；S142, using the first hemispherical some first hemispherical lens are prepared on first silica gel；Remove first hemispherical after S143, band mould baking and form first lens jacket.
- 4. according to the method for claim 1, it is characterised in that S15 includes：S151, apply the second silica gel on first lens jacket；The first layer of silica gel is formed after S152, baking；S153, the 3rd silica gel is applied in first layer of silica gel；S154, using the second hemispherical prepare some second hemispherical lens on the 3rd silica gel；Remove second hemispherical after S155, band mould baking and form the second lens jacket.
- 5. according to the method for claim 4, it is characterised in that S16 includes：S161, outer layer silica gel is applied on second lens jacket；S162, outer layer hemisphere formed on the outer layer silica gel using the 3rd hemispherical；Remove the 3rd hemispherical after S163, band mould baking and form the outer layer layer of silica gel；S164, at a temperature of 100-150 DEG C, baking 4-12 hours with complete LED encapsulation.
- 6. according to the method for claim 4, it is characterised in that also include after S155：S156, the 4th silica gel is applied on second lens jacket；The second layer of silica gel is formed after S157, baking；S158, the 5th silica gel is applied in second layer of silica gel；S159, using the 4th hemispherical prepare some 3rd hemispherical lens on the 5th silica gel；Remove the 4th hemispherical after S1510, band mould baking and form the 3rd lens jacket.
- 7. according to the method for claim 6, it is characterised in that also include after S1510：S1511, the 6th silica gel is applied on the 3rd lens jacket；The 3rd layer of silica gel is formed after S1512, baking；S1513, the 7th silica gel is applied in the 3rd layer of silica gel；S1514, using the 5th hemispherical prepare some 4th hemispherical lens on the 7th silica gel；Remove the 5th hemispherical after S1515, band mould baking and form the 4th lens jacket.
- 8. according to the method for claim 1, it is characterised in that the LED chip is blue-light LED chip；Including：Sapphire Substrate and stack gradually in the GaN stabilized zones in the Sapphire Substrate, GaN cushions, N-type GaN layer, InGaN/GaN volumes Sub- well structure, p-type AlGaN barrier layers and p-type GaN layer.
- 9. according to the method for claim 1, it is characterised in that first lens jacket is free of fluorescent material；The multiple silicon Glue-line, the lens region and the outer layer layer of silica gel contain yellow fluorescent powder.
- 10. a kind of LED encapsulation structure, it is characterised in that the encapsulating structure is as the method described in any one of claim 1~9 Prepare and formed.
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| CN102422081A (en) * | 2009-05-12 | 2012-04-18 | 飞利浦拉米尔德斯照明设备有限责任公司 | Led lamp producing sparkle |
| CN203192852U (en) * | 2013-04-28 | 2013-09-11 | 杭州龙尚光电有限公司 | Led packaging structure |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| US8846424B2 (en) * | 2010-03-25 | 2014-09-30 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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| CN102422081A (en) * | 2009-05-12 | 2012-04-18 | 飞利浦拉米尔德斯照明设备有限责任公司 | Led lamp producing sparkle |
| US8846424B2 (en) * | 2010-03-25 | 2014-09-30 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| CN203192852U (en) * | 2013-04-28 | 2013-09-11 | 杭州龙尚光电有限公司 | Led packaging structure |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
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Application publication date: 20180323 |