CN102820405A - Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus - Google Patents

Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus Download PDF

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Publication number
CN102820405A
CN102820405A CN2012102464730A CN201210246473A CN102820405A CN 102820405 A CN102820405 A CN 102820405A CN 2012102464730 A CN2012102464730 A CN 2012102464730A CN 201210246473 A CN201210246473 A CN 201210246473A CN 102820405 A CN102820405 A CN 102820405A
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China
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copper
glue
base plate
led
silicon base
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CN2012102464730A
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CN102820405B (en
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罗怡
王晓东
刘刚
邹靓靓
王立鼎
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Dalian University of Technology
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Dalian University of Technology
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Abstract

The invention discloses an integrated manufacturing method of a silicon base plate and a copper micro heat pipe of an LED (light emitting diode) apparatus for radiation of the LED apparatus. The method comprises the steps of: sputtering a copper seed layer with thickness within 50-300nm on the back of the silicon base plate; coating a 100-900micron thick photoresist on the copper seed layer; photoetching to obtain an electroforming mould and electroforming copper till the needed thickness is obtained; removing the photoresist and obtaining a copper microstructure on the silicon base plate; cutting a pure copper plate to obtain another pure copper sheet in same size; and obtaining a medium pouring hole by a mechanical machining method; bonding the pure copper sheet with the silicon base plate with a copper micro-channel; pouring the medium; and obtaining the silicon base plate integrated with the copper micro heat pipe. According to the method, no interface is available between the copper micro heat pipe and the silicon base plate, so that no interface heat resistor with large heat resistance is not available. The whole heat resistance of the apparatus is small, and the integrated apparatus is stable in heat transfer, the reliability is improved and service life of the apparatus is prolonged.

Description

A kind of silicon substrate of LED device and copper micro heat pipe integrated manufacturing method
Technical field
The invention belongs to LED device package and heat radiation field, relate to a kind of silicon substrate and copper micro heat pipe integrated manufacturing method of LED device, be applied to the heat radiation of LED device.
Background technology
LED be called as the 4th generation lighting source, have characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, can be widely used in fields such as various indications, demonstration, decoration, backlight, general lighting and urban landscape.In recent years, some developed countries have launched fierce technological contest around the development of LED in the world, and wherein the LED heat radiation is a problem demanding prompt solution.Data shows, if luminous when the led chip junction temperature is 25 ℃ is 100%; When junction temperature rose to 60 ℃ so, its luminous quantity just had only 90%; When being 100oC, junction temperature just drops to 80%; 140oC just has only 70%.The heating of LED can make that also its spectrum moves in addition; Colour temperature raises; Thermal stress increases; Problems such as the aging acceleration of fluorescent material epoxy resin, so the heat radiation of LED device is the bottleneck problem during it is used.
The thermal conductance ability of the heat radiation of LED device and its substrate has direct correlation, utilizes the high heat conductance of baseplate material or structure, and heat is derived from led chip, realizes and extraneous heat exchange.LED base plate for packaging commonly used at present mainly comprises printed substrate (PCB), metal core printed circuit board (PCB) (MCPCB), Direct Bonding copper base (DBC) and semi-conductor silicon chip etc.Wherein, PCB substrate production technology is very ripe, and cost is lower.But the FR4 thermal conductivity (0.2-0.3W/mK) as PCB master's material is very low, is difficult to satisfy great power LED cooling requirement [A Poppe1, et al., 26th IEEE SEMI-THERM Symposium, 2010,283].MCPCB is a kind of sandwich structure of being made up of metal aluminum sheet, organic insulator and Copper Foil; Its advantage is that cost is low, can realize large scale, large-scale production [S Lee, et al.; Korean Institute of Electrical Engineers, 2008:2276-2280].But also exist thermal conductivity lower, problem such as thermal mismatching and serviceability temperature are lower.DBC is that a kind of high-termal conductivity is covered the copper ceramic wafer, by ceramic substrate (Al 2O 3Or AlN) and conductive layer (thickness is greater than 0.1mm Cu layer) at high temperature (1065 ℃) eutectic sintering form, according to cabling requirement, form circuit with the etching mode.DBC has that thermal conductivity is good, insulating properties is strong, reliability advantages of higher [T Wang, et al, 2009 ICEPT-HDP:581-584].But the copper layer is thicker, so the minimum feature of wet etching is generally greater than 150 μ m.Semiconductor silicon has thermal conductivity height, little with led chip material thermal mismatching; Have advantages such as process technology maturation; Be suitable as very much the heat-radiating substrate of great power LED; Be material commonly used in novel large-power LED device substrate design in recent years and the development, but because traditional LED employing sapphire or gallium nitride material are substrate, so this technology still is in the laboratory research stage.
Summary of the invention
The invention provides a kind of manufacture of substrates of the LED of being applied to heat radiation, the micro-structural that adopts the method for electroforming to make copper at the back side of LED silicon substrate is with formation copper micro heat pipe after another piece copper base employing Direct Bonding method sealing-in.
Technical scheme of the present invention is following:
The first step, at the back spatter copper seed layer of silicon substrate, copper seed layer thickness is in the 50-300nm scope;
Second the step, on copper seed layer, apply photoresist, photoresist can be positive glue; Also can be negative glue, the thickness of photoresist obtains electroforming shape mould after the photoetching in the 100-900 mu m range; Copper electroforming is up to the thickness of needs; It is thick that electroforming thickness is less than or equal to glue, removes photoresist, on silicon substrate, obtains the copper micro-structural;
In the 3rd step, cutting fine copper plate obtains and another onesize sheet fine copper sheet of silicon chip, and the thickness of this fine copper sheet is generally 0.5-2mm, and adopts machining process to obtain the working medium fill orifice, and the aperture is 0.5-2.5mm; With this fine copper sheet and the silicon substrate bonding that has the copper microchannel, pour into working medium, obtain the silicon substrate of integrated copper micro heat pipe.
Effect of the present invention and benefit are: the copper because the method for employing electroforming is directly grown on silicon base; Therefore this method does not have the interface between copper micro heat pipe and silicon substrate; Do not need heat-conducting glue and binding agent, do not have the bigger interface resistance of thermal resistance, the overall thermal resistance of device is little; Do not exist because therefore the dry capacity of heat transmission bust that causes of glue conducts heat and stablize the reliability and the life-span of having improved device yet.
Description of drawings
Fig. 1 is the silicon chip structural representation of the integrated copper micro heat pipe of the present invention's making.
Fig. 2 utilizes the present invention to make the process chart of the silicon chip of integrated copper micro heat pipe.
Among the figure: 1 fine copper sheet; 2 bronze medal micro-structurals; 3 copper seed layers; 4 silicon substrates; 5 UNICOM's raceway grooves; 6 SU-8 glue; 7 SU-8 glue electroforming shape moulds.
Embodiment
Below in conjunction with technical scheme and accompanying drawing, be described in detail specific embodiment of the present invention.
Embodiment 1
At first, adopt the method for sputter to obtain the thick copper seed layer 3 of 150nm at the back side of silicon substrate 4.Then, spin coating SU-8 glue 6, when the model of SU-8 glue 6 was 2075, sol evenning machine was with 500rpm speed precoating 15s, and afterwards with 2000rpm speed spin coating 45s, it is thick to obtain the thick glue of 100 μ m.With baking SU-8 glue before 85 ℃ 90 minutes, on mask aligner, develops acquisition SU-8 glue electroforming shape mould 7 after 5 minutes with baking SU-8 glue in 85 ℃ after the photoetching.
In electrocasting machine, copper electroforming on SU-8 glue electroforming shape mould 6 stops when consistent with the bondline thickness of shape mould, in the liquid that removes photoresist of SU-8 glue, removes SU-8 glue, obtains copper micro-structural 2.Cutting a slice and the onesize fine copper plate 1 of silicon substrate on the thick fine copper plate of 0.5mm adopting machining process with UNICOM's raceway groove 5 corresponding positions of copper micro-structural 2, are for example holed acquisition heat-pipe working medium fill orifice.Adopt the copper micro-structural 2 on oxy arc sintering fine copper sheet 1 and the silicon substrate 4, the bonding micro heat pipe, with the microchannel volume ratio perfusion working medium of 30-80%, for example water, ethanol etc. obtain the silicon substrate of integrated copper micro heat pipe.
Embodiment 2
At first, adopt the method for sputter to obtain the thick copper seed layer 3 of 200nm at the back side of silicon substrate 4.Then, spin coating SU-8 glue 6.When the model of SU-8 glue 6 was 3100, sol evenning machine was with 500rpm speed precoating 15s, and afterwards with 1000rpm speed spin coating 45s, it is thick to obtain the thick glue of 250 μ m.With baking SU-8 glue before 85 ℃ 150 minutes, on mask aligner, develops acquisition SU-8 glue electroforming shape mould 7 after 15 minutes with baking SU-8 glue in 85 ℃ after the photoetching.
In electrocasting machine, copper electroforming on SU-8 glue electroforming shape mould 6 stops when consistent with the bondline thickness of shape mould, in the liquid that removes photoresist of SU-8 glue, removes SU-8 glue, obtains copper micro-structural 2.Cutting a slice and the onesize fine copper plate 1 of silicon substrate on the thick fine copper plate of 0.5mm adopting machining process with UNICOM's raceway groove 5 corresponding positions of copper micro-structural 2, are for example holed acquisition heat-pipe working medium fill orifice.Adopt the copper micro-structural 2 on oxy arc sintering fine copper sheet 1 and the silicon substrate 4, the bonding micro heat pipe, with the microchannel volume ratio perfusion working medium of 30-80%, for example water, ethanol etc. obtain the silicon substrate of integrated copper micro heat pipe.
Embodiment 3
At first, adopt the method for sputter to obtain the thick copper seed layer 3 of 200nm at the back side of silicon substrate 4.Then, spin coating SU-8 glue 6.When the model of SU-8 glue 6 was 3100, sol evenning machine was with 500rpm speed precoating 15s, and afterwards with 800rpm speed spin coating 45s, it is thick to obtain the thick glue of 300 μ m.With baking SU-8 glue before 85 ℃ 200 minutes, on mask aligner, develops acquisition SU-8 glue electroforming shape mould 7 after 30 minutes with baking SU-8 glue in 85 ℃ after the photoetching.
In electrocasting machine, copper electroforming on SU-8 glue electroforming shape mould 6 stops when consistent with the bondline thickness of shape mould, in the liquid that removes photoresist of SU-8 glue, removes SU-8 glue, obtains copper micro-structural 2.Cutting a slice and the onesize fine copper plate 1 of silicon substrate on the thick fine copper plate of 0.5mm adopting machining process with UNICOM's raceway groove 5 corresponding positions of copper micro-structural 2, are for example holed acquisition heat-pipe working medium fill orifice.Adopt the copper micro-structural 2 on oxy arc sintering fine copper sheet 1 and the silicon substrate 4, the bonding micro heat pipe, with the microchannel volume ratio perfusion working medium of 30-80%, for example water, ethanol etc. obtain the silicon substrate of integrated copper micro heat pipe.
Embodiment 4
At first, adopt the method for sputter to obtain the thick copper seed layer 3 of 300nm at the back side of silicon substrate 4.Then, spin coating SU-8 glue 6 is when the model of SU-8 glue 6 is 3100; With baking SU-8 glue before 85 ℃ 200 minutes, on mask aligner after the photoetching with baking SU-8 glue in 85 ℃ after 30 minutes, repeat spin coating SU-8 glue, preceding baking, photoetching and middle baking process 2 times; Wherein photoetching needs the image on the alignment mask; Acquisition thickness is that the glue of 900 μ m is thick, develops, and obtains SU-8 glue electroforming shape mould 7.
In electrocasting machine, copper electroforming on SU-8 glue electroforming shape mould 6 stops when consistent with the bondline thickness of shape mould, in the liquid that removes photoresist of SU-8 glue, removes SU-8 glue, obtains copper micro-structural 2.Cutting a slice and the onesize fine copper plate 1 of silicon substrate on the thick fine copper plate of 0.5mm adopting machining process with UNICOM's raceway groove 5 corresponding positions of copper micro-structural 2, are for example holed acquisition heat-pipe working medium fill orifice.Adopt the copper micro-structural 2 on oxy arc sintering fine copper sheet 1 and the silicon substrate 4, the bonding micro heat pipe, with the microchannel volume ratio perfusion working medium of 30-80%, for example water, ethanol etc. obtain the silicon substrate of integrated copper micro heat pipe.

Claims (1)

1. the silicon substrate of a LED device and copper micro heat pipe integrated manufacturing method are applied to the heat radiation of LED device, it is characterized in that the step of this method is following:
A) at the back spatter copper seed layer of silicon substrate, copper seed layer thickness is in the 50-300nm scope;
B) on copper seed layer, apply photoresist, photoresist is positive glue or negative glue, and the thickness of photoresist is in the 100-900 mu m range; Obtain electroforming shape mould after the photoetching, copper electroforming is up to the thickness of needs, and it is thick that electroforming thickness is less than or equal to glue; Remove photoresist, on silicon substrate, obtain the copper micro-structural;
C) cutting fine copper plate obtains and another onesize sheet fine copper sheet of silicon chip, and the thickness of this fine copper sheet is generally 0.5-2mm, and adopts machining process to obtain the working medium fill orifice, and the aperture is 0.5-2.5mm; With this fine copper sheet and the silicon substrate bonding that has the copper microchannel, pour into working medium, obtain the silicon substrate of integrated copper micro heat pipe.
CN201210246473.0A 2012-07-17 2012-07-17 Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus Expired - Fee Related CN102820405B (en)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN103911621A (en) * 2014-04-04 2014-07-09 大连理工大学 Method for changing surface energy of electroforming structure
CN107642752A (en) * 2016-07-22 2018-01-30 法雷奥照明公司 Land vehicle light emitting module
CN109959289A (en) * 2019-03-15 2019-07-02 华南理工大学 A kind of ultra-thin low-grade fever tube preparation method of antigravity
CN111403348A (en) * 2020-03-27 2020-07-10 华中科技大学 Ceramic substrate containing micro-channel and preparation method thereof
US10985297B2 (en) 2018-10-12 2021-04-20 Industrial Technology Research Institute Package of photoelectric device

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CN102117867A (en) * 2010-10-15 2011-07-06 陈林 Manufacturing method of LED (light emitting diode) heat radiating substrate
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JPS6272576A (en) * 1985-09-26 1987-04-03 Toshiba Corp Ceramic-metal bonded body
JPH02119247A (en) * 1988-10-28 1990-05-07 Nec Corp Pin grid array package type semiconductor device
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CN107642752A (en) * 2016-07-22 2018-01-30 法雷奥照明公司 Land vehicle light emitting module
US10985297B2 (en) 2018-10-12 2021-04-20 Industrial Technology Research Institute Package of photoelectric device
CN109959289A (en) * 2019-03-15 2019-07-02 华南理工大学 A kind of ultra-thin low-grade fever tube preparation method of antigravity
CN111403348A (en) * 2020-03-27 2020-07-10 华中科技大学 Ceramic substrate containing micro-channel and preparation method thereof

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