JP2002335019A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
JP2002335019A
JP2002335019A JP2001109709A JP2001109709A JP2002335019A JP 2002335019 A JP2002335019 A JP 2002335019A JP 2001109709 A JP2001109709 A JP 2001109709A JP 2001109709 A JP2001109709 A JP 2001109709A JP 2002335019 A JP2002335019 A JP 2002335019A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
substrate
light
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001109709A
Other languages
Japanese (ja)
Other versions
JP3783572B2 (en
Inventor
Koji Nakano
公司 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2001109709A priority Critical patent/JP3783572B2/en
Publication of JP2002335019A publication Critical patent/JP2002335019A/en
Application granted granted Critical
Publication of JP3783572B2 publication Critical patent/JP3783572B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which can be repaired and driven stably, regarding a light emitting device which is capable of large current high luminance light emission. SOLUTION: This light emitting device is provided with a substrate (102) having through holes, retaining members (105) fitted to the through holes, and light emitting elements (101) arranged on the retaining members.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の技術分野】本発明は大電流高輝度発光が可能な
発光装置に係り、特に、リペアが可能で、安定駆動可能
な発光装置を提供することにある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device capable of emitting large current and high luminance, and more particularly to providing a light emitting device which can be repaired and can be driven stably.

【0002】[0002]

【従来技術】今日、発光装置としてRGB(赤・緑・青
色)がそれぞれ高輝度に発光可能な発光ダイオードに加
え紫外線が発光可能な発光ダイオード、白色(例えば、
JIS8110で規定された白色を含む)が発光可能な発光ダ
イオードやレーザーダイオードが開発された。これらの
半導体発光素子は高輝度、低消費電力且つ長寿命化とい
う優れた特性を有している。そのため、屋外や屋内の各
種ディスプレイ、交通や鉄道などの信号機、各種インジ
ケータや標示や液晶装置のバックライトだけでなく、照
明自体として利用されはじめている。
2. Description of the Related Art Today, as light emitting devices, in addition to light emitting diodes capable of emitting RGB (red, green, blue) light with high luminance, light emitting diodes capable of emitting ultraviolet light, white light (for example,
Light-emitting diodes and laser diodes capable of emitting light (including white as defined in JIS8110) have been developed. These semiconductor light emitting devices have excellent characteristics such as high luminance, low power consumption and long life. For this reason, it is beginning to be used not only for various displays outdoors and indoors, for traffic signals such as traffic and railroads, for various indicators and signs, and for backlights of liquid crystal devices, but also as lighting itself.

【0003】このような発光装置はガラスエポキシ樹脂
の表面に銅箔のパターンが形成された基板上に複数のS
MD型発光ダイオードや砲弾型発光ダイオードを配置す
ると共に電気的に接続させユニットを構成させる。照明
や信号機などとして利用する場合は、各発光ダイオード
を直列及び/又は並列に接続するとともに電源に接続さ
せる。電源から電流を供給することによってユニットを
構成する各発光ダイオードが発光する。信号機や照明と
して利用する場合は、発光ダイオード上にレンズを設け
特定の領域の指向特性を向上させたり散乱させたりす
る。通常、半導体発光素子であるLEDに電流を多く流
すにしたがい、一定の電流までは比較的リニアに発光輝
度が上昇する。他方、LEDの温度上昇に反比例して発
光効率が低下する。また、温度上昇に伴い発光素子から
放出される光のスペクトルがシフトする場合がある。
[0003] Such a light emitting device has a plurality of S on a substrate in which a copper foil pattern is formed on the surface of a glass epoxy resin.
An MD type light emitting diode and a shell type light emitting diode are arranged and electrically connected to form a unit. When used as lighting or a traffic light, each light emitting diode is connected in series and / or in parallel and connected to a power source. Each light emitting diode constituting the unit emits light by supplying current from a power supply. When used as a traffic light or lighting, a lens is provided on a light emitting diode to improve or scatter directional characteristics in a specific area. Normally, as more current flows through the LED, which is a semiconductor light emitting element, the emission luminance increases relatively linearly up to a certain current. On the other hand, the luminous efficiency decreases in inverse proportion to the temperature rise of the LED. Further, the spectrum of light emitted from the light-emitting element may shift with an increase in temperature.

【0004】このような問題を解決し、より明るい発光
装置を構成するためには図4に示す構成が考えられる。
図4には樹脂と比較して比較的熱伝導率のよいアルミや
セラミックス基板(402)上に絶縁層(405)、導電性パター
ン(403)を介してLEDチップ(401)を数多く密接配置させ
実装させてある。このような構成とすることによって、
光量を増大させつつ各発光素子に大電流を流しつつ安定
した特性を有するLEDパワーモジュールなどとするこ
とができる。
In order to solve such a problem and construct a brighter light emitting device, a configuration shown in FIG. 4 can be considered.
In FIG. 4, a large number of LED chips (401) are closely arranged via an insulating layer (405) and a conductive pattern (403) on an aluminum or ceramic substrate (402) having relatively high thermal conductivity as compared with resin. It has been implemented. With such a configuration,
An LED power module or the like having stable characteristics while allowing a large current to flow through each light emitting element while increasing the amount of light can be provided.

【0005】しかしながら、高熱伝導基板は半導体発光
素子の実装と、電気伝導、熱伝導を合わせた機能を有し
ているため総合的な効率が低く、信号機や照明用として
発光ダイオードを利用するためには、さらなる高輝度化
が求められる。また、LEDチップ(401)をアルミニウ
ムやセラミック上にダイボンド配置すると、LEDチッ
プの取り外しなど補修時にモジュール自体が損傷する可
能性がある。さらに、熱伝導性がよいため実装後に不具
合のあるLEDチップだけを取り出すことが難しく、そ
の過程において不具合のないLEDチップにまで熱及び
機械的損傷を与えることもある。特に、個別のLEDチ
ップを取り外し及び再実装する場合において、加熱する
と高熱伝導基板(402)のため補修部分だけでなく、隣接
する他の良好な部分までも加熱してしまい、モジュール
がすべて破壊される可能性もある。
[0005] However, since the high heat conductive substrate has a function of mounting the semiconductor light emitting element, electric conduction, and heat conduction, the overall efficiency is low. Requires higher luminance. Further, if the LED chip (401) is die-bonded on aluminum or ceramic, the module itself may be damaged during repair such as removal of the LED chip. Furthermore, since it has good thermal conductivity, it is difficult to remove only a defective LED chip after mounting, and in the process, even a non-defective LED chip may be thermally and mechanically damaged. In particular, when removing and re-mounting individual LED chips, when heated, not only the repaired part due to the high thermal conductive substrate (402) but also the other good parts adjacent to it are heated, and all the modules are destroyed. It is possible that

【0006】[0006]

【発明が解決しようとする課題】したがって、本願発明
は高輝度に安定して発光可能な発光装置を提供すると共
に発光素子を比較的簡単に個別に取り外しでき補修が容
易である発光装置を提供するものである。
SUMMARY OF THE INVENTION Accordingly, the present invention provides a light emitting device capable of stably emitting light with high luminance and a light emitting device in which light emitting elements can be relatively easily detached individually and repaired easily. Things.

【0007】[0007]

【課題を解決するための手段】本発明は、貫通孔を持っ
た基板と、貫通孔と勘合する支持部材と、支持部材上に
配置された発光素子とを有する発光装置である。これに
より比較的簡単に発光装置を構成することができる。ま
た、支持体を貫通孔に勘合させていることから極めて薄
く発光装置を構成することができる。
SUMMARY OF THE INVENTION The present invention is a light emitting device including a substrate having a through hole, a support member that fits into the through hole, and a light emitting element disposed on the support member. Thus, the light emitting device can be configured relatively easily. Further, since the support is fitted into the through-hole, the light emitting device can be configured to be extremely thin.

【0008】本発明の請求項2の発光装置は、支持部材
が貫通孔を持った基板よりも熱伝導率が高い発光装置で
ある。これにより、発光素子と筐体となる基板との熱的
機能分離を図ることが容易となる。そのため、大電流を
流すことによって生ずる発光素子からの熱を支持部材か
ら効率よく外部に放出させることができる。
A light emitting device according to a second aspect of the present invention is a light emitting device in which the support member has a higher thermal conductivity than a substrate having a through hole. This facilitates thermal function separation between the light emitting element and the substrate serving as the housing. Therefore, heat from the light emitting element generated by flowing a large current can be efficiently released from the support member to the outside.

【0009】本発明の請求項3に記載の発光装置は、支
持部材が基板の貫通孔と着脱可能な発光装置である。こ
れにより、発光素子に不具合が生じた場合、基板や同時
に実装される他の半導体素子などに損傷を与えることな
く不具合が生じた発光素子のみを交換することができ
る。
According to a third aspect of the present invention, in the light emitting device, the support member is detachable from the through hole of the substrate. Thus, when a defect occurs in the light emitting element, only the defective light emitting element can be replaced without damaging the substrate or another semiconductor element mounted at the same time.

【0010】本願発明の請求項4に記載の発光装置は、
支持部材にリフレクター構造を有する発光装置である。
これにより、発光素子からの光を効率よく外部に取り出
すことができると共に、貫通孔に挿入する支持部材自体
にリフレクター構造をもつ。そのため、リフレクター構
造を持ちつつも発光装置全体の厚みを極めて薄くするこ
とができる。
The light emitting device according to claim 4 of the present invention is
This is a light emitting device having a reflector structure on a support member.
Thus, the light from the light emitting element can be efficiently extracted to the outside, and the support member itself inserted into the through hole has a reflector structure. Therefore, the thickness of the entire light emitting device can be extremely reduced while having the reflector structure.

【0011】本願発明の請求項5に記載の発光装置は、
支持部材にメッキが施されている発光装置である。支持
部材の熱伝導と発光素子からの光の反射とを機能分離さ
せることでそれぞれの特性を高めることができる。ま
た、発光装置の表面から見ると基板自体の表面とは別に
支持部材だけがメッキされて見えるためキャビティの大
きさに合わせてメッキ部を比較的簡単に小さく形成させ
ることができる。また、リペア時に置いても新たに支持
部材の置き換えだけで済むため、あらかじめ基板にメッ
キが形成されている構成のものと比較してメッキ部を損
傷することはない。
[0011] The light emitting device according to claim 5 of the present invention comprises:
This is a light emitting device in which a support member is plated. By separating the heat conduction of the support member and the reflection of light from the light-emitting element in function, their characteristics can be improved. In addition, when viewed from the surface of the light emitting device, only the support member appears to be plated separately from the surface of the substrate itself, so that the plated portion can be relatively easily formed small in accordance with the size of the cavity. Further, even if it is placed at the time of repair, it is only necessary to newly replace the support member, so that the plated portion is not damaged as compared with a configuration in which plating is formed on the substrate in advance.

【0012】本発明の請求項6の発光装置は、基板が表
面に導電性パターンが形成された硝子エポキシ樹脂から
なる発光装置である。これにより支持部材を発光素子か
ら電気的に分離させ導通と熱伝導とを機能分離させるこ
とができる。
A light emitting device according to a sixth aspect of the present invention is a light emitting device in which a substrate is made of a glass epoxy resin having a conductive pattern formed on a surface. Thereby, the support member can be electrically separated from the light emitting element, so that conduction and heat conduction can be functionally separated.

【0013】本願発明の請求項7の発光装置は、支持体
部材が発光素子が配置される表面よりも底部が大きい。
画鋲の如き凸状の支持部材形状により、放熱効率を高め
信頼性を向上させることができると共に比較的簡単に実
装やリペアを行うことができ量産性を高めることができ
る。また底部が嵌合時のストッパーとして機能すること
もできる。
[0013] In the light emitting device according to claim 7 of the present invention, the bottom of the support member is larger than the surface on which the light emitting element is arranged.
Due to the shape of the convex support member such as a thumbtack, heat dissipation efficiency can be improved and reliability can be improved, and mounting and repair can be performed relatively easily, and mass productivity can be increased. Also, the bottom part can function as a stopper at the time of fitting.

【0014】本願発明の請求項8の発光装置は、支持部
材が熱放出手段を有している。支持部材がヒートシンク
などの熱放出手段を有する構造に形成されていること
で、これに直接配置されている発光素子が熱による劣化
を受けにくくなる。
[0014] In the light emitting device according to claim 8 of the present invention, the support member has a heat releasing means. Since the supporting member is formed to have a structure having heat releasing means such as a heat sink, the light emitting element directly disposed on the supporting member is less likely to be deteriorated by heat.

【0015】[0015]

【発明の実施の形態】本発明者は種々実験の結果、発光
素子を実装する支持体とそれらを保持する特定形状の筐
体との関係を定めることにより、発光特性や実装性が向
上することを見出し本願発明をなすに至った。
BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventor has determined that the relationship between a support on which a light-emitting element is mounted and a casing of a specific shape holding the support improves light-emitting characteristics and mountability. And found the invention of the present application.

【0016】即ち、本願発明は発光素子を保持実装する
基板を貫通孔を持った基板と、この貫通孔に着脱可能で
発光素子が実装される支持体とに分離することにより、
実装後に発光素子の不具合により取り替える必要がある
ときでも発光素子ではなく、支持体を基板から抜き取る
だけの極めて簡単な構成によって不具合のある発光素子
を他の発光素子に悪影響を与えることなく取り替えるこ
とができる。本発明の実施態様を図1及び図3に示す。
That is, according to the present invention, the substrate for holding and mounting the light emitting element is separated into a substrate having a through hole and a support on which the light emitting element is detachably mounted.
Even when it is necessary to replace the light emitting element after mounting due to a defect of the light emitting element, it is possible to replace the defective light emitting element without adversely affecting other light emitting elements by an extremely simple configuration that only removes the support from the substrate instead of the light emitting element it can. An embodiment of the present invention is shown in FIGS.

【0017】あらかじめリード電極を構成する銅箔パタ
ーン(103)が絶縁膜(106)を介して表面に形成されたステ
ンレス基板(102)にドリルなどを用いて複数の貫通孔(10
8)を形成させる。次に、平板状に突起が形成された銅板
を支持体(105)として利用する(図3(A)の工程)。
突起は基板の貫通孔に勘合できるように複数設けられて
おり、その先端にはLEDチップ(101)が配置されるよ
うにキャビティを構成している。支持体となる突起のつ
いた平板を基板の貫通孔(108)に勘合させる(図3
(B)の工程)。次に、各支持体を構成すべく、突起の
ついた平板をエッチングによって分離(310)する。これ
によって、複数の貫通孔に分離された支持体(105)が勘
合した状態となる。次の工程でサファイア基板上にpn
接合を有する窒化ガリウム系化合物半導体層が形成され
たLEDチップ(101)を基板に羽目合わされた支持体を
構成するキャビティ内にエポキシ樹脂によってダイボン
ドする。
A plurality of through-holes (10) are formed on a stainless steel substrate (102) having a copper foil pattern (103) constituting a lead electrode previously formed on the surface thereof via an insulating film (106) by using a drill or the like.
8) is formed. Next, a copper plate having a flat plate-like projection is used as a support (105) (step of FIG. 3A).
A plurality of projections are provided so as to fit into the through holes of the substrate, and a cavity is formed at the tip of the projection so that the LED chip (101) is arranged. A flat plate with a projection serving as a support is fitted into the through hole (108) of the substrate (FIG. 3).
(Step (B)). Next, to form each support, the flat plate with the protrusion is separated (310) by etching. As a result, the support (105) separated into the plurality of through holes is brought into a state where it is fitted. In the next step, pn on sapphire substrate
An LED chip (101) on which a gallium nitride-based compound semiconductor layer having a junction is formed is die-bonded with an epoxy resin into a cavity forming a support body that is laid on a substrate.

【0018】この場合、絶縁基板上に半導体が形成され
ているため、同一表面側から一対の電極を取り出すLE
Dの構成となっている。ダイボンド樹脂を硬化後、LE
Dチップの各電極と基板の表面に設けられた銅パターン
(103)とを金線(104)によって好適にワイヤーボンディン
グする。このようにして、LEDパワーモジュールを構
成することができる(図3(C)の工程)。なお、複数
の支持体が形成された場合について説明したが、一つだ
け形成された発光ダイオードとして形成できることはい
うまでもない。また、LEDパワーモジュール上には、
透光性の樹脂を設けてもよいし、またはレンズを設けて
もよい。レンズを設ける場合は、シリコンなどの樹脂を
介してもよいし、気体を封入させてもよい。このような
レンズは、予め成形されたものを用いてもよいし、硬化
性樹脂を用いて成形させても良く、成形には金型等を用
いてもよい。また、これらレンズには、発光ダイオード
からの発光波長によって励起されてそれよりも長波長の
光を発する蛍光物質を設けることもできる。これによ
り、発光素子からの光だけでなく、蛍光物質からの光を
も利用することができるので、様々な波長の光を有する
発光装置とすることができる。
In this case, since the semiconductor is formed on the insulating substrate, a pair of electrodes for extracting a pair of electrodes from the same surface side is used.
D configuration. After curing the die bond resin, LE
Copper pattern provided on each electrode of D chip and the surface of substrate
(103) is suitably wire-bonded with a gold wire (104). In this way, an LED power module can be configured (the step of FIG. 3C). Although the case where a plurality of supports are formed has been described, it is needless to say that the light-emitting diode can be formed with only one support. Also, on the LED power module,
A light-transmitting resin may be provided, or a lens may be provided. When a lens is provided, a resin such as silicon may be interposed or a gas may be sealed. Such a lens may be formed in advance, may be formed using a curable resin, and may be formed using a mold or the like. In addition, these lenses may be provided with a fluorescent substance which is excited by the emission wavelength of the light emitting diode and emits light of a longer wavelength. Thus, not only light from a light emitting element but also light from a fluorescent substance can be used, so that a light emitting device having light of various wavelengths can be provided.

【0019】次に、リペア時の工程例について説明す
る。上述の如き形成された発光装置のリード電極に電流
を流すことで発光検査を行うことができる(図3(D)
の工程)。発光検査の結果不具合のある発光素子(301)
がダイボンドされた支持部材を画像認識装置で位置を特
定する。発光観測面側から支持部材だけ基板からピンで
突き落とすことによって不具合の発光素子がダイボンド
された支持部材を取り除くことができる。続いて、不具
合のあった発光素子と基板上の導電性パターンとを電気
的に接続させていたワイヤーを機械的に除去した後、改
めて発光素子付き支持部材(305)を貫通孔に挿入する
(図3(E)の工程)。発光素子をワイヤーボンドする
ことによって比較的簡単な構成でリペアを容易に行うこ
とができる(図3(F)の工程)。以下本発明の各構成に
ついて詳述する。
Next, an example of a repair process will be described. A light emission test can be performed by applying a current to the lead electrode of the light emitting device formed as described above (FIG. 3D).
Process). Light emitting element (301) with defective light emission test
Specifies the position of the die-bonded support member with an image recognition device. By pushing down only the support member from the emission observation surface with a pin from the substrate, the support member to which the defective light emitting element is die-bonded can be removed. Subsequently, after mechanically removing the wire that electrically connects the defective light emitting element and the conductive pattern on the substrate, the supporting member with the light emitting element (305) is inserted again into the through hole ( FIG. 3E). Repair can be easily performed with a relatively simple configuration by wire-bonding the light emitting element (step of FIG. 3F). Hereinafter, each configuration of the present invention will be described in detail.

【0020】(発光素子101,201)本発明の用い
られる発光素子は各種半導体発光素子を利用することが
できる。具体的半導体発光素子としては、サファイヤ、
SiC、スピネル、GaNなどの基板上にMOCVD法
などを利用してn型窒化物半導体及びp型窒化物半導体
を積層させたものを好適に利用することができる。Ga
N、GaAlN、InGaN、AlN、InN、InG
aAlN、GaInBNなどの窒化物半導体だけでなく
InGaP、GaP、GaAs、GaAlAs、Al
P、AlAs、ZnS、ZnSe、SiCなど各種半導
体を発光層に用いた発光素子を好適に利用することがで
きる。基板に導電性材料を用いた場合支持部材とAgペ
ーストやハンダなどによってダイボンドし電気的に導通
させてもよいし、間に絶縁層を介してもよい。
(Light Emitting Elements 101 and 201) As the light emitting element used in the present invention, various semiconductor light emitting elements can be used. Specific semiconductor light emitting devices include sapphire,
A structure in which an n-type nitride semiconductor and a p-type nitride semiconductor are stacked on a substrate of SiC, spinel, GaN, or the like using MOCVD or the like can be suitably used. Ga
N, GaAlN, InGaN, AlN, InN, InG
In addition to nitride semiconductors such as aAlN and GaInBN, InGaP, GaP, GaAs, GaAlAs, Al
A light emitting element using various semiconductors such as P, AlAs, ZnS, ZnSe, and SiC for a light emitting layer can be suitably used. When a conductive material is used for the substrate, the support member may be die-bonded with an Ag paste, solder, or the like so as to be electrically connected, or an insulating layer may be interposed therebetween.

【0021】(基板102,202)本願発明に用いら
れる基板としては、貫通孔を有し支持部材が嵌合可能な
ものである。基板自体は支持部材を保持可能なものであ
り、はめ込みによって固定されるものでもよく、突起に
よって固定されるもの。ネジ式で固定されるもの、発光
素子などが破壊されない温度で溶融する金属やロウ材で
固定するものなど種々利用することができる。本発明の
基板は貫通孔を支持部材の嵌合に利用しているため比較
的簡単に製造できると共に放熱性、機械的強度など目的
に合わせて支持部材との機能分離することができる。ま
た、基板に設けられる貫通孔はドリルで開けることもで
きるし、レーザーにより設けることもできる。また、打
ち抜き加工によっても形成することができる。貫通孔の
形状も円他、発光素子の指向特性に合わせた支持部材に
合わせて楕円や四角形、三角形など種々選択することが
できる。このような基板の具体的材料として、あらかじ
めリード電極を構成する銅箔などの導電性パターンが表
面に形成された硝子エポキシ樹脂や銅、アルミニウムや
各種合金、セラミックなど種々のものを利用することが
できる。リード電極を表面に持つ基板として金属を用い
た場合は、電気的に絶縁すべくSiOやSiNxなど
の絶縁膜を形成後、銅、金、銀などの薄膜パターンやこ
れら金属を含む合金、これら金属を含む積層膜などCV
Dやスパッタによって形成させたものを好適に利用する
ことができる。 (支持部材105、205)本発明の支持部材とは発光
素子が配置されるものであり、基板の貫通孔と嵌合可能
なものである。発光素子が配置される支持部材の表面は
発光素子からの光を効率よく反射させるために、キャビ
ティを設けリフレクター構造としてもよい。また、反射
率の高い金属や合金などでメッキなどすることもでき
る。このような金属として金、銀、銅やニッケルや各種
合金を好適に利用することできる。支持部材自体の材料
としては発光素子からの熱を効率よく外部に取り出すた
めに高熱伝導性材料としてAu、Cu、Alやこれら合
金などを好適に利用することもできる。特に、銅やアル
ミニウムは加工のしやすさやなどから好適に利用するこ
とができる。
(Substrates 102 and 202) The substrates used in the present invention have through holes and can be fitted with support members. The substrate itself can hold the support member, and may be fixed by fitting or fixed by protrusions. Various types can be used, such as those fixed with a screw type, those fixed with a metal or brazing material that melts at a temperature at which the light emitting element and the like are not destroyed. Since the substrate of the present invention uses the through hole for fitting the support member, it can be manufactured relatively easily, and can be separated in function from the support member in accordance with the purpose such as heat dissipation and mechanical strength. Further, the through hole provided in the substrate can be formed by a drill or can be provided by a laser. Further, it can also be formed by punching. The shape of the through hole can be variously selected from a circle, an ellipse, a quadrangle, a triangle, and the like, depending on the support member that matches the directional characteristics of the light emitting element. As a specific material of such a substrate, it is possible to use various materials such as glass epoxy resin, copper, aluminum, various alloys, and ceramics on which a conductive pattern such as a copper foil constituting a lead electrode is formed on the surface in advance. it can. When a metal is used as a substrate having a lead electrode on its surface, an insulating film such as SiO 2 or SiNx is formed to electrically insulate, and then a thin film pattern of copper, gold, silver, or an alloy containing these metals, CV such as laminated film containing metal
D and those formed by sputtering can be suitably used. (Supporting members 105 and 205) The supporting member of the present invention is a member on which a light emitting element is arranged, and can be fitted into a through hole of a substrate. A cavity may be provided on the surface of the support member on which the light emitting element is disposed to reflect light from the light emitting element efficiently, and may have a reflector structure. Further, plating with a metal or alloy having high reflectivity can also be performed. Gold, silver, copper, nickel, and various alloys can be suitably used as such a metal. As a material of the supporting member itself, Au, Cu, Al, an alloy thereof, or the like can be suitably used as a material having high thermal conductivity in order to efficiently extract heat from the light emitting element to the outside. In particular, copper and aluminum can be suitably used because of ease of processing and the like.

【0022】発光ダイオードを量産性よく形成させるた
めには平板状に発光素子が配置される複数の突起が形成
されるものを利用することができる。基板との嵌合後に
それぞれの発光素子用支持部材として分離させることも
できるし、そのまま利用することもできる。分離させる
場合は、各突起部の間隔や作業性を考慮して突起部が1
つずつ分離されるようにしてもよいし、2つ以上有する
ようなパーツに分離することもできる。また、支持持部
材をリード電極の一部として利用することもできる。な
お、支持部材と基板との位置決めや量産性を良くさせ支
持部材の抜け防止のために、支持部材の突出部(107)を
設けてもよい。基板には突出部対応する凹部を設けるこ
とが好ましい。
In order to form a light emitting diode with good mass productivity, a light emitting diode having a plurality of projections on which light emitting elements are arranged in a flat plate shape can be used. After being fitted to the substrate, they can be separated as respective light emitting element support members, or can be used as they are. In the case of separation, the protrusions should be 1
They may be separated one by one, or they may be separated into two or more parts. Further, the supporting and supporting member can be used as a part of the lead electrode. Note that a protrusion (107) of the support member may be provided in order to improve the positioning between the support member and the substrate and prevent the support member from slipping off, and to prevent mass removal. It is preferable to provide a concave portion corresponding to the protrusion on the substrate.

【0023】また、発光素子駆動時に発生する熱を効率
よく放出させるために、支持体に熱放出手段を有するこ
ともできる。熱放出手段としては、平板を大きくした
り、裏面(突起部の反対側の面)に凹凸を設けるなど表
面積を広げることにより放熱性を向上させる方法や、ヒ
ートパイプ等の熱を移動させる手段を設けて熱を離れた
位置に移動させる方法がある。
In order to efficiently release the heat generated when the light emitting element is driven, the support may have a heat releasing means. As the heat releasing means, a method for improving heat radiation by increasing the surface area such as making a flat plate larger or providing irregularities on the back surface (the surface opposite to the protrusion), or a means for transferring heat such as a heat pipe is used. There is a method of disposing the heat and moving the heat to a remote position.

【0024】凹凸により表面積を広げる機構を有するも
のとしてはヒートシンクが挙げられる。ヒートシンク
は、熱を吸収してから放出する機構を有するものであ
り、具体的には、図5に示すように、支持体の裏面に凸
部が設けられた形状とする。このような構造とすること
で、表面積を大きくすることができるので、発光素子か
ら発生して支持体に蓄熱された熱を効率よく外部に放出
させることができる。凸部を大きくしたり数を増やした
りすることで表面積は大きくなるが、支持体自体も大き
くなるので、発光素子から放出される熱に応じて好まし
い形状や材料等を選択することができる。
As a device having a mechanism for increasing the surface area by unevenness, there is a heat sink. The heat sink has a mechanism of absorbing heat and then releasing the heat. Specifically, as shown in FIG. 5, the heat sink has a shape in which a convex portion is provided on the back surface of the support. With such a structure, the surface area can be increased, so that heat generated from the light-emitting element and stored in the support can be efficiently released to the outside. Increasing the number of protrusions or increasing the number of protrusions increases the surface area, but also increases the size of the support itself, so that a preferable shape, material, or the like can be selected according to heat released from the light-emitting element.

【0025】また、ヒートパイプは、熱を効率よく熱伝
導させるもので、発光素子から離れた位置に効率よく熱
を伝導させることにより放出させることができる。この
ようなヒートパイプは、管の内壁に毛細管構造を持たせ
た金属パイプの内部を真空にし、作動液として少量の水
・代替フロンなどを密封して形成することができる。具
体的には、ヒートパイプの一端を発光素子が配置された
支持体に熱的に接続させ、他端はその支持体と離れた位
置に配置させる。発光素子から放出された熱は支持体を
通してヒートパイプの一端に達し、その加熱された部分
の作動液が蒸発する。蒸気流となった作動液は発光素子
が配置され加熱された一端よりも低温である他端へと移
動する。蒸気流が低温部の管壁に接触し冷却されて凝縮
されると毛細管現象または重力により発光素子と熱的に
接触された支持体へと戻り、繰り返し熱を連続的に輸送
することができる。このようにして発光素子の発熱を効
率よく熱伝導させることができる。ヒートパイプの他端
は、支持体と接続された一端から離れていれば、何も設
けなくても低温部として機能するが、より効果的に熱を
移動し放出させるには、冷却器や上記のようなヒートシ
ンクを設けてもよい。このように、発光素子を配置させ
る支持体に、熱放出手段に加えて熱伝達手段も設けるこ
とにより、基板と離れた位置に熱放出手段を配置させる
ことができるので、発光装置の形態に応じて様々な方法
で用いることができる。
The heat pipe efficiently conducts heat, and can emit heat by efficiently conducting heat to a position away from the light emitting element. Such a heat pipe can be formed by evacuating the inside of a metal pipe having a capillary structure on the inner wall of the pipe and sealing a small amount of water, CFC substitute, or the like as a working fluid. Specifically, one end of the heat pipe is thermally connected to a support on which the light emitting element is disposed, and the other end is disposed at a position away from the support. The heat released from the light emitting element reaches one end of the heat pipe through the support, and the working fluid in the heated portion evaporates. The working fluid that has become a vapor flow moves to the other end where the temperature is lower than the heated one end where the light emitting element is disposed. When the vapor flow comes into contact with the tube wall of the low-temperature part and is cooled and condensed, the vapor flow returns to the support thermally in contact with the light emitting element by capillary action or gravity, so that heat can be continuously transported repeatedly. Thus, heat generated by the light emitting element can be efficiently conducted. If the other end of the heat pipe is away from one end connected to the support, it functions as a low-temperature portion without providing anything, but in order to transfer and release heat more effectively, a cooler or the above May be provided. In this way, by providing the heat transfer means in addition to the heat release means on the support on which the light emitting element is disposed, the heat release means can be disposed at a position away from the substrate, and therefore, depending on the form of the light emitting device. Can be used in various ways.

【0026】(蛍光物質)本発明に利用可能な蛍光物質
は、発光素子から発せられる発光波長によって励起さ
れ、その光よりも長波長の可視光を発光可能な蛍光物質
ならば無機蛍光体でも有機蛍光体でもよく、また、発光
色は紫色〜赤色までの全ての可視光のものが適用でき
る。具体的には、無機蛍光体としてはケイ酸塩系蛍光
体、リン酸塩系蛍光体、アルミン酸系蛍光体、希土類系
蛍光体、酸希土類系蛍光体、硫化亜鉛系蛍光体などが挙
げられる。具体的には緑色系発光蛍光体では、YSi
:Ce,Tb、MgAl1119:Ce,Tb、
BaMgAl1627:Mn、(Zn,Cd)S:
Ag、ZnS:Au,Cu,Al、ZnS:Cu,A
l、SrAl:Eu、青色系発光蛍光体では(S
rCaBa)(POCl:Eu、(BaCa)
(POCl:Eu、BaMgAl
1627:Eu、Sr(POCl:Eu、S
:Eu、ZnS:Ag、Al、ZnS:A
g,Al(pigmented)、ZnS:AgCl、
ZnS:AgCl(pigmented)、赤色系発光
蛍光体ではYS:Eu、YS:Eu(pi
gmented)、Y:Eu、3.5MgO・
0.5MgF・GeO:Mn、Y(PV)O:E
u、5MgO・3LiO・Sb:Mn、Mg
TiO:Mn等が挙げられる。比較的発光効率が高い
ものとしては、緑色系発光蛍光体ではSrAl
Eu、青色系発光蛍光体ではSr(POCl:
Eu、赤色系発光蛍光体ではYS:Euが挙げら
れる。
(Fluorescent substance) The fluorescent substance that can be used in the present invention is an inorganic fluorescent substance that is excited by an emission wavelength emitted from a light emitting element and emits visible light having a longer wavelength than that light. Phosphors may be used, and emission colors of all visible light from purple to red can be applied. Specifically, examples of the inorganic phosphor include a silicate-based phosphor, a phosphate-based phosphor, an aluminate-based phosphor, a rare-earth-based phosphor, an rare-earth-based phosphor, and a zinc-sulfide-based phosphor. . Specifically, in the case of a green light-emitting phosphor, Y 2 Si
O 5 : Ce, Tb, MgAl 11 O 19 : Ce, Tb,
BaMg 2 Al 16 O 27 : Mn, (Zn, Cd) S:
Ag, ZnS: Au, Cu, Al, ZnS: Cu, A
l, SrAl 2 O 4 : Eu, blue light emitting phosphor (S
rCaBa) 5 (PO 4 ) 3 Cl: Eu, (BaCa)
5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al
16 O 27 : Eu, Sr 5 (PO 4 ) 3 Cl: Eu, S
r 2 P 2 O 7 : Eu, ZnS: Ag, Al, ZnS: A
g, Al (pigmented), ZnS: AgCl,
ZnS: AgCl (pigmented), and Y 2 O 2 S: Eu and Y 2 O 2 S: Eu (pi
gmented), Y 2 O 3: Eu, 3.5MgO ·
0.5MgF 2 · GeO 2 : Mn, Y (PV) O 4 : E
u, 5MgO · 3Li 2 O · Sb 2 O 5: Mn, Mg 2
TiO 4 : Mn and the like. As a material having relatively high luminous efficiency, a green luminescent phosphor is SrAl 2 O 4 :
Eu and Sr 5 (PO 4 ) 3 Cl for the blue light emitting phosphor:
Eu and a red light emitting phosphor include Y 2 O 2 S: Eu.

【0027】以下本発明の具体的実施例について詳述す
るが、これのみに限られるものでないことは言うまでも
ない。
Hereinafter, specific embodiments of the present invention will be described in detail, but it is needless to say that the present invention is not limited thereto.

【0028】[0028]

【実施例】(実施例1)本発明を図2を用いて説明す
る。あらかじめリード電極を構成する銅箔パターン(20
3)が表面に形成された硝子エポキシ樹脂(202)にドリ
ル、エッチングやレーザなどを用いて貫通孔を形成させ
る。次に、平板状に突起が形成された金属板を支持体(2
05)として利用する。突起の先端にはLEDチップ(201)
が配置されLEDチップからの光を有効に外部に取り出
せれるようにキャビティを構成している。支持体(205)
となる突起のついた平板を基板(202)の貫通孔に勘合さ
せる。基板の貫通孔に支持部材が勘合した状態となる。
次の工程でサファイア基板上にpn接合を有する窒化ガ
リウム系化合物半導体層が形成されたLEDチップ(20
1)を支持体(205)を構成するキャビティ内にエポキシ樹
脂によってダイボンドする。
(Embodiment 1) The present invention will be described with reference to FIG. The copper foil pattern (20
3) A through hole is formed in the glass epoxy resin (202) formed on the surface by using a drill, etching, laser or the like. Next, the metal plate on which the plate-like projections are formed is
05). LED chip (201) at the tip of the protrusion
Are arranged to form a cavity so that light from the LED chip can be effectively extracted to the outside. Support (205)
The flat plate having the projections is fitted into the through hole of the substrate (202). The support member is fitted into the through hole of the substrate.
In the next step, an LED chip (20) having a gallium nitride-based compound semiconductor layer having a pn junction formed on a sapphire substrate
1) is die-bonded with an epoxy resin into the cavity constituting the support (205).

【0029】この場合、LEDチップ(201)は絶縁基板
上に半導体が形成されているため、同一表面側から一対
の電極を取り出す構成となっている。ダイボンド樹脂を
硬化後、LEDチップ(201)の各電極と基板(202)の表面
に設けられた銅パターン(203)とを金線(204)によって好
適にワイヤーボンディングする。次に、LEDチップ(2
01)からの光を効率よく集光するよう形成されたレンズ
(209)が基板(202)と密着して設けられている。内部には
不活性ガスやシリコン樹脂(210)などが封入されてい
る。この構成の発光装置とすることで比較的簡単にリペ
アが容易な発光装置とすることができる。なお、絶縁層
上にpn接合が形成されたLEDチップを用いている
が、支持体自体をリード電極の一部として利用する場合
や、絶縁スペーサを構成する場合などは半導体を介して
一対の電極が設けられたLEDチップを利用することが
できることは言うまでもない。
In this case, since the semiconductor is formed on the insulating substrate of the LED chip (201), a pair of electrodes are taken out from the same surface side. After curing the die bond resin, each electrode of the LED chip (201) and the copper pattern (203) provided on the surface of the substrate (202) are preferably wire-bonded with a gold wire (204). Next, the LED chip (2
01) A lens formed to efficiently collect light from
(209) is provided in close contact with the substrate (202). An inert gas, silicon resin (210), or the like is sealed inside. With the light-emitting device having this configuration, the light-emitting device can be relatively easily repaired. Note that an LED chip having a pn junction formed on an insulating layer is used. However, when the support itself is used as a part of a lead electrode or when an insulating spacer is formed, a pair of electrodes is interposed via a semiconductor. Needless to say, it is possible to use an LED chip provided with.

【0030】(実施例2)支持体として、図6に示すよ
うな裏面(突起部が形成された面と対向する面)に凹凸
を有する形状の支持体(511)を用いる。この支持体に
は、突起部が複数個形成されており、突起部の反対側の
面(裏面)には凹凸が形成されている。また、本実施例
では、レンズとして各突起部と対向する位置で光を集光
出来るようにレンズ状に形成された連続型レンズを用い
ているが、各発光素子ごとにレンズを設けていても何ら
問題はない。さらにこのレンズには、図に示すように、
レンズの内側、即ち発光素子と対向する側に蛍光物質が
設けられている。蛍光物質は、樹脂等に混入させて塗布
し、硬化させることでレンズの内側に設けることができ
る。蛍光物質はレンズの材料に混入させておいてもよ
い。このような支持体とレンズを用いる以外は、実施例
1と同様に行い、本発明の発光装置を得る。
(Example 2) As the support, a support (511) having a shape having irregularities on the back surface (the surface opposite to the surface on which the protrusions are formed) as shown in FIG. 6 is used. A plurality of protrusions are formed on the support, and irregularities are formed on a surface (back surface) opposite to the protrusions. Further, in the present embodiment, a continuous lens formed in a lens shape so that light can be collected at a position facing each protrusion as a lens is used, but a lens may be provided for each light emitting element. There is no problem at all. Furthermore, as shown in the figure,
A fluorescent substance is provided inside the lens, that is, on the side facing the light emitting element. The fluorescent substance can be provided inside the lens by being mixed with a resin or the like, applied, and cured. The fluorescent substance may be mixed in the lens material. A light emitting device of the present invention is obtained in the same manner as in Example 1 except that such a support and a lens are used.

【0031】(実施例3)レンズとして、予め成形され
たものを用いるのではなく、図7に示すようにシリコン
樹脂(714)等の透光性樹脂をポッティングして硬化させ
ることにより形成させるレンズを用いる以外は、実施例
1と同様に行い、本発明の発光装置を得る。レンズとし
て機能させているシリコン樹脂(714)は、支持体の突起
部及び発光素子、更には電極にボンディングされたワイ
ヤーまでを覆うように設けられていればよく、金型等を
用いずとも表面張力を利用してレンズ状に形成すること
ができる。
(Embodiment 3) As shown in FIG. 7, a lens formed by potting and curing a translucent resin such as a silicone resin (714) instead of using a preformed lens as the lens. A light emitting device of the present invention is obtained in the same manner as in Example 1 except for using. The silicon resin (714) functioning as a lens only needs to be provided so as to cover the protrusions of the support, the light emitting element, and even the wires bonded to the electrodes, and can be used without using a mold or the like. It can be formed into a lens shape using tension.

【0032】(実施例4)実施例3において、シリコン
樹脂を硬化後、金型を用いて図8のようにレンズ材料を
注入して2層構造のレンズを一体成形させて、本発明の
発光装置を得る。
Example 4 In Example 3, after the silicone resin was cured, a lens material was injected using a mold as shown in FIG. 8 to integrally form a lens having a two-layer structure. Get the device.

【0033】[0033]

【発明の効果】【The invention's effect】 【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の発光装置を示す模式的断面図。FIG. 1 is a schematic sectional view showing a light emitting device of the present invention.

【図2】 本発明の他の発光装置を示す模式的断面図。FIG. 2 is a schematic sectional view showing another light emitting device of the present invention.

【図3】 本発明の発光装置の形成工程及びリペア工程
を示す工程図。
FIG. 3 is a process chart showing a forming step and a repairing step of the light emitting device of the present invention.

【図4】 本発明と比較のために示す発光装置の模式的
断面図。
FIG. 4 is a schematic sectional view of a light emitting device shown for comparison with the present invention.

【図5】 本発明の他の発光装置を示す模式的断面図。FIG. 5 is a schematic sectional view showing another light emitting device of the present invention.

【図6】 本発明の他の発光装置を示す模式断面図。FIG. 6 is a schematic sectional view showing another light emitting device of the present invention.

【図7】 本発明の他の発光装置を示す模式断面図。FIG. 7 is a schematic sectional view showing another light emitting device of the present invention.

【図8】 本発明の他の発光装置を示す模式断面図。FIG. 8 is a schematic sectional view showing another light emitting device of the present invention.

【符号の説明】[Explanation of symbols]

101、201、501、601、701、801…発
光素子としてのLEDチップ 102、202、502、602、702、802…貫
通孔が設けられた基板 103、203、503、603、703、803…リ
ード電極を構成する導電性パターン 104,204、504、604、704、804…発
光素子とリード電極とを電気的に接続させる電気的接続
部材 105、205、705、805…支持体 106、506、606、706、806…金属基板と
導電性パターンとを電気的に分離させる絶縁層 107、507、607、707、807…支持体に設
けられた抜け防止用の突出部 108…貫通孔 209…レンズ 210…不活性ガス 301…不良のLEDチップ 305…良好なLEDチップが配置された支持体 310…エンチングされ電気的に分離された分離溝 401…LEDチップ 402…金属基板 403…銅パターン 404…金線 405…SiO絶縁膜 511、612…凹凸を設けた支持体 613…連続型レンズ 616…蛍光物質 714、814…シリコン樹脂 815…一体成形されたレンズ
101, 201, 501, 601, 701, 801 ... LED chips 102, 202, 502, 602, 702, 802 ... substrates provided with through holes 103, 203, 503, 603, 703, 803 ... leads Conductive patterns 104, 204, 504, 604, 704, 804... Electrical connection members 105, 205, 705, 805... Supports 106, 506, 606 , 706, 806: an insulating layer for electrically separating the metal substrate from the conductive pattern 107, 507, 607, 707, 807: a protrusion for preventing slippage provided on a support member 108: a through hole 209: a lens 210 ... inert gas 301 ... defective LED chip 305 ... support 31 on which a good LED chip is arranged ... Enchingu are electrically isolated isolation trench 401 ... LED chips 402 ... metal substrate 403 ... copper pattern 404 ... gold wire 405 ... SiO 2 insulating film 511,612 ... support 613 ... continuous lens provided with irregularities 616 ... Fluorescent substances 714, 814: Silicon resin 815: Lens integrally molded

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 貫通孔を持った基板(102)と、該貫通孔
と勘合する支持部材(105)と、該支持部材上に配置され
た発光素子(101)とを有する発光装置。
1. A light emitting device comprising: a substrate (102) having a through hole; a support member (105) that fits into the through hole; and a light emitting element (101) disposed on the support member.
【請求項2】 前記支持部材(105)は貫通孔を持った基
板(102)よりも熱伝導率が高い請求項1に記載の発光装
置。
2. The light emitting device according to claim 1, wherein the support member has a higher thermal conductivity than a substrate having a through hole.
【請求項3】 前記支持部材(105)は基板(102)の貫通孔
と着脱可能な請求項1乃至請求項2に記載の発光装置。
3. The light emitting device according to claim 1, wherein the support member (105) is detachable from a through hole of the substrate (102).
【請求項4】 前記支持部材(105)はリフレクター構造
を有する請求項1乃至請求項3に記載の発光装置。
4. The light emitting device according to claim 1, wherein the support member has a reflector structure.
【請求項5】 前記支持部材(105)にメッキが施されて
いる請求項1乃至請求項4に記載の発光装置。
5. The light emitting device according to claim 1, wherein the support member is plated.
【請求項6】 前記基板(102)は表面に導電性パターン
が形成された硝子エポキシ樹脂である請求項1乃至請求
項5に記載の発光装置。
6. The light emitting device according to claim 1, wherein the substrate is a glass epoxy resin having a conductive pattern formed on a surface thereof.
【請求項7】 前記支持部材(105)は発光素子(101)が配
置される表面よりも底部が大きい請求項1乃至請求項6
に記載の発光装置。
7. The support member (105) has a bottom portion larger than a surface on which the light emitting element (101) is arranged.
A light-emitting device according to claim 1.
【請求項8】 前記支持部材(105)は、熱放出手段を有
する請求項1乃至請求項7記載の発光装置。
8. The light-emitting device according to claim 1, wherein said support member has a heat-emitting means.
JP2001109709A 2001-03-05 2001-04-09 Light emitting device Expired - Lifetime JP3783572B2 (en)

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