CN105702828A - Fabrication process of composite transparent conductive layer - Google Patents
Fabrication process of composite transparent conductive layer Download PDFInfo
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- CN105702828A CN105702828A CN201610212122.6A CN201610212122A CN105702828A CN 105702828 A CN105702828 A CN 105702828A CN 201610212122 A CN201610212122 A CN 201610212122A CN 105702828 A CN105702828 A CN 105702828A
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- Prior art keywords
- transparent conductive
- conductive layer
- composite transparent
- composite
- layer
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- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 12
- 239000002923 metal particle Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 19
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a fabrication process of a composite transparent conductive layer, relating to the technical field of production of a photoelectric semiconductor device such as a diode light emitting diode (LED) chip, a solar cell and a photoelectric detector. The fabrication process comprises the following steps of forming a transparent conductive thin film layer with 10-300 nanometers on a base material, evaporating a metal layer with high reflectivity on the transparent conductive thin film layer, and fabricating the composite transparent conductive layer by an alloy process at 100-500 DEG C. Such nanometer metal particles are used for facilitating the diffusion of current at a crystal boundary (between gains); compared with a conventional transparent conductive layer, the composite transparent conductive layer has the advantages that the composite transparent conductive layer is endowed with higher current diffusion effect, and the external quantum efficiency of the semiconductor device can be improved when the composite transparent conductive layer is applied to the photoelectric semiconductor device.
Description
Technical field
The present invention relates to the production technical field of the optoelectronic semiconductor components such as LED chip, solaode, photodetector。
Background technology
The optoelectronic semiconductor component fields such as the thin film warps such as ITO, ZnO are widely used in LED frequently as transparency conducting layer, solaode, photodetector。
When existing LED chip makes, transparent conductive film is usually formed by e-gun or sputter evaporation, and as transparency conducting layer, ITO, the thin film such as ZnO needs to take into account conductivity and penetrance (or absorptance) to optimize the external quantum efficiency of semiconductor device。
Obtain higher penetrance to reduce the absorption to light, generally only reduce the thickness of transparent conductive film。And after reducing the thickness of transparent conductive film, its conductivity Rs can increase therewith。The conductivity of convention transparent conductive film and penetrance (or absorptance) are generally difficult to and get both。
Summary of the invention
The present invention seeks to propose the composite transparent thin-film material of a kind of penetrance having higher conductivity and Geng Gao。
The technical scheme is that: on basic material, first form the transparent conductive film layer of 10nm～300nm, on described transparent conductive film layer, evaporation has the metal level of high reflectance, then again through the alloying technology of 100～500 DEG C, composite transparent conductive layer is made。
Adopting conventional e-gun or sputter to be formed and formed transparent conductive film by crystal grain not of uniform size, on transparent conductive film layer, evaporation formation surface continuous print thin film or independent island structure have the metal level of high reflectance。Convention transparent conductive film and the layering of high reflectance nano metal layer materials at two layers that above two-step process is formed are independent, in order to there be formation composite transparent conductive layer, need the alloy through certain condition, high-reflectivity metal can form nano-particle at the grain boundaries of convention transparent conductive layer after alloy, and the nano-metal particle being equivalent to high reflectance is embedded in the grain boundaries of convention transparent conductive film。This nano-metal particle can promote that electric current is in the diffusion of grain boundaries (between crystal grain and crystal grain); compared to convention transparent conductive layer; this composite transparent conductive layer will have better current spreading effect, be applied to increase in optoelectronic semiconductor component the external quantum efficiency of semiconductor device。
It addition, this nano-metal particle with high reflectance can reduce convention transparent conductive film crystal boundary to the absorption of light and increases the crystal boundary reflection to light。Incident illumination the high reflectance nano-metal particle through crystal boundary once or have after multiple reflections certain probability from front penetrate, therefore this composite transparent conductive layer has higher penetrance。
Meanwhile, compared to convention transparent conductive layer, composite transparent conductive layer has less surface resistance (better electric conductivity) and the higher penetrance to light (the less absorbance to light)。
To sum up, compare the convention transparent conductive film under stack pile, with this composite transparent conductive layer formed, having the penetrance of higher conductivity and Geng Gao, this composite transparent conductive layer is applicable to formal dress, upside-down mounting, vertical-type LED chip, solaode, the optoelectronic semiconductor component such as photodetector。
Further, adopting ITO or ZnO is that material forms transparent conductive film layer on basic material。This material is conventional material, it is easy to production and processing。
The metal level with high reflectance is formed with Al or Ag evaporation。Al and Ag, as the metal that luminous reflectance is the highest, is applied in composite transparent conductive layer and can reduce the absorption to light。
The thickness of the described metal level with high reflectance is 0.5nm～10nm。When this layer is too thin, after forming composite transparent conductive layer, its conductivity does not have obvious reduction。When this layer is too thick, after forming composite transparent conductive layer, still having the surface that part metals covers, hinder penetrating of light, the penetrance of light can reduce。
Described alloying technology is by O at boiler tube or RTA2、N2Carry out 1～30min with in the mixed-gas atmosphere of Ar composition, finally make nano-metal particle be embedded in the grain boundaries of convention transparent conductive layer。
Accompanying drawing explanation
Fig. 1 is the current spread schematic diagram of product formation of the present invention。
Fig. 2 is light path schematic diagram。
Detailed description of the invention
One, processing technology:
1, technique routinely, makes the convention transparent conductive membrane layer that form 10nm～300nm for material the semiconductor device (such as LED chip, solaode, photodetector etc.) needing transparent conductive film layer is upper with ITO or ZnO。
2, on transparent conductive film layer, form, with Al or Ag evaporation, the metal level with high reflectance that thickness is 0.5nm～10nm。
3, alloying technology: the semi-products processed through step 2 are placed in boiler tube or RTA, by O2、N2Process 1～30min with in the Ar mixed-gas atmosphere formed, be compounded to form compound transparent electricity conductive film。
Two, products characteristics:
1, the lifting of current spreading effect
This composite transparent conductive layer is composited by high reflectance nano-metal particle and convention transparent conductive film, and the nano-metal particle of high reflectance is embedded in the grain boundaries of convention transparent conductive film。This nano-metal particle can promote that electric current is in the diffusion of grain boundaries (between crystal grain and crystal grain), as shown in Figure 1。Compared to convention transparent conductive layer, this composite transparent conductive layer will have better current spreading effect, be applied to increase in optoelectronic semiconductor component the external quantum efficiency of semiconductor device。
2. the lifting of penetrance:
This composite transparent conductive layer has the nano-metal particle of high reflectance at the grain boundaries of convention transparent conductive layer, and this nano-metal particle with high reflectance can reduce convention transparent conductive film crystal boundary and to the absorption of light and increase the crystal boundary reflection to light。Incident illumination the high reflectance nano-metal particle through crystal boundary once or have after multiple reflections certain probability from front penetrate, as shown in Figure 2。This composite transparent conductive layer has higher penetrance。
3. convention transparent leads thin film photooptical data contrast after compound:
By following table it can be seen that after compound, compared to convention transparent conductive layer, composite transparent conductive layer has less surface resistance (better electric conductivity) and higher penetrance。
Claims (5)
1. the processing technology of a composite transparent conductive layer, it is characterized in that: on basic material, first form the transparent conductive film layer of 10nm～300nm, on described transparent conductive film layer, evaporation has the metal level of high reflectance, then again through the alloying technology of 100～500 DEG C, composite transparent conductive layer is made。
2. the processing technology of composite transparent conductive layer according to claim 1, it is characterised in that: adopting ITO or ZnO is that material forms transparent conductive film layer on basic material。
3. the processing technology of composite transparent conductive layer according to claim 1, it is characterised in that: form the metal level with high reflectance with Al or Ag evaporation。
4. the processing technology of composite transparent conductive layer according to claim 1 or 3, it is characterised in that: described in there is high reflectance the thickness of metal level be 0.5nm～10nm。
5. the processing technology of composite transparent conductive layer according to claim 1, it is characterised in that: described alloying technology is by O at boiler tube or RTA2、N21～30min is carried out with in the mixed-gas atmosphere of Ar composition。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610212122.6A CN105702828A (en) | 2016-04-07 | 2016-04-07 | Fabrication process of composite transparent conductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610212122.6A CN105702828A (en) | 2016-04-07 | 2016-04-07 | Fabrication process of composite transparent conductive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105702828A true CN105702828A (en) | 2016-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610212122.6A Pending CN105702828A (en) | 2016-04-07 | 2016-04-07 | Fabrication process of composite transparent conductive layer |
Country Status (1)
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| CN (1) | CN105702828A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130674A (en) * | 2021-03-18 | 2021-07-16 | 上海交通大学 | Vertical germanium-silicon photoelectric detector with ITO electrode and preparation method thereof |
Citations (5)
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|---|---|---|---|---|
| CN1638155A (en) * | 2003-12-22 | 2005-07-13 | 三星电子株式会社 | Top-emitting nitride-based light emitting device and method of manufacturing the same |
| CN101777616A (en) * | 2010-01-29 | 2010-07-14 | 上海大学 | Zinc oxide-based transparent electrode light emitting diode and preparation method thereof |
| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN104134736A (en) * | 2014-07-28 | 2014-11-05 | 中国科学院半导体研究所 | Semiconductor device, transparent metal mesh electrode, and preparation method of transparent metal mesh electrode |
| CN105023985A (en) * | 2015-07-28 | 2015-11-04 | 聚灿光电科技股份有限公司 | LED (Light Emitting Diode) chip and preparation method thereof |
-
2016
- 2016-04-07 CN CN201610212122.6A patent/CN105702828A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638155A (en) * | 2003-12-22 | 2005-07-13 | 三星电子株式会社 | Top-emitting nitride-based light emitting device and method of manufacturing the same |
| CN101777616A (en) * | 2010-01-29 | 2010-07-14 | 上海大学 | Zinc oxide-based transparent electrode light emitting diode and preparation method thereof |
| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN104134736A (en) * | 2014-07-28 | 2014-11-05 | 中国科学院半导体研究所 | Semiconductor device, transparent metal mesh electrode, and preparation method of transparent metal mesh electrode |
| CN105023985A (en) * | 2015-07-28 | 2015-11-04 | 聚灿光电科技股份有限公司 | LED (Light Emitting Diode) chip and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130674A (en) * | 2021-03-18 | 2021-07-16 | 上海交通大学 | Vertical germanium-silicon photoelectric detector with ITO electrode and preparation method thereof |
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Application publication date: 20160622 |