CN202253012U - Light-emitting diode (LED) module and lighting equipment - Google Patents
Light-emitting diode (LED) module and lighting equipment Download PDFInfo
- Publication number
- CN202253012U CN202253012U CN201120341681XU CN201120341681U CN202253012U CN 202253012 U CN202253012 U CN 202253012U CN 201120341681X U CN201120341681X U CN 201120341681XU CN 201120341681 U CN201120341681 U CN 201120341681U CN 202253012 U CN202253012 U CN 202253012U
- Authority
- CN
- China
- Prior art keywords
- led module
- led
- chip
- substrate
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model is applied to the field of lighting and provides an LED module and lighting equipment. The LED module comprises a base plate capable of radiating, the front face of the base plate is provided with a metal layer which is divided into a plurality of mutually independent trip-shaped sub-layers, each sub-layer is respectively provided with at least one LED chip provided with a vertical electrode structure, the bottom of the LED chip is in electric connection with the sub-layers on which the LED chip is attached, and the top portion of the LED chip is in electric connection with an adjacent sub-layer through a bonding line. The LED module adopts the LED chip with the vertical electrode structure, the bottom of the LED module can serve as one end of an electrode, and the top portion of the chip only needs to be provided with one electrode and connected with one bonding line. Compared with an LED module adopting a chip with a formal structure, the LED module can enlarge effective lighting area of the chip, greatly improve lighting efficiency and further effectively improve performance and quality of the LED lighting equipment.
Description
Technical field
The utility model belongs to the LED lighting field, relates in particular to a kind of LED module and lighting apparatus.
Background technology
Along with global energy is in short supply day by day, energy savings becomes the matter of utmost importance that countries in the world are considered.Illumination power consumption accounts for 20% of world's total power consumption greatly at present, and traditional lighting power consumption is big, luminous efficiency is low, the life-span is short; GaN base LED (Light Emitting Diode) is a kind of semiconductor solid luminescence device; Have that volume is little, in light weight, good directionality and can anti-various mal-conditions; At aspects such as power consumption, life-span and environmental protection incomparable superiority is arranged; The new light sources that is considered to the 21 century most worthy has improved Human's production and life style to a certain extent.In the LED lighting apparatus; The luminous efficiency of illuminating module is to influence the service behaviour of LED lighting apparatus and the key factor of quality; The composition structure of illuminating module, the type of chip and heat dissipation design all can influence the luminous efficiency of entire module; Therefore performance and the quality in order to improve the LED lighting apparatus needs the further luminous efficiency of raising LED module.
The utility model content
The purpose of the utility model is to provide a kind of LED module, is intended to solve the existing low problem of LED module luminous efficiency.
The utility model is to realize like this; A kind of LED module comprises the substrate that can dispel the heat, and the front of said substrate is provided with metal level; Said metal level is divided into a plurality of separate bar shaped sublayers; Be equipped with the led chip that at least one has the vertical electrode structure on each described sublayer, the bottom of said led chip is electrically connected with the sublayer that it is adhered to, and the top is electrically connected with adjacent sublayers through a bonding line.
Optimal technical scheme as the utility model:
What the back side of said substrate was provided with heat conduction covers the copper layer.
The said thickness that covers the copper layer is 100～1000 μ m.
Said metal layer thickness is 50～500 μ m.
Said led chip connects through eutectic weldering mode with substrate or is mutually bonding through conductive silver paste.
The surface of said led chip is provided with phosphor powder layer.
The front of said substrate also is provided with the insulating barrier that is provided with around said metal level.
The front of said substrate also is provided with positive electrode and negative electrode, and said insulating barrier is laid in the top of said positive electrode and negative electrode.
Said positive electrode and negative electrode are provided with two pairs, and are symmetrically distributed in the both sides of said substrate front side.
Another purpose of the utility model is to provide a kind of lighting apparatus that comprises above-mentioned LED module.
The LED module that the utility model provides adopts the led chip of vertical electrode structure, and its bottom itself can be used as electrode one end, and the chip top only need be provided with an electrode; Connect a bonding line and get final product, and existing common LED module all adopts formal dress structure chip, positive and negative electrode is adhered on its surface simultaneously; Need to connect two bonding lines; Occupied bigger area, the efficient lighting area of chip has been reduced, by comparison; The led chip of employing vertical electrode structure can increase the efficient lighting area of chip in the present embodiment; This LED module is compared with existing most of LED module, and its luminous efficiency can increase substantially, and then effectively improves the performance and the quality of LED lighting apparatus.
Description of drawings
Fig. 1 is the side-looking structural representation of the utility model embodiment LED module;
Fig. 2 is the plan structure sketch map of the utility model embodiment LED module.
The specific embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer,, the utility model is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
In conjunction with accompanying drawing 1,2; Present embodiment provides a kind of LED module, comprises a substrate 11 with heat sinking function, is provided with metal level 12 in the front of substrate 11; Metal level 12 is divided into a plurality of separate bar shaped sublayers 121; Be equipped with several led chips 13 on each sublayer 121, the quantity of the led chip 13 that is provided with on the different sublayers 121 can be identical, also can be different.A plurality of separate sublayers 121 are set are led chip 13 short circuits on the sublayer, be convenient to bonding wire and fixed chip 13 simultaneously, even with the bright dipping that guarantees module.In order to improve the luminous efficiency of LED module, the led chip 13 in the present embodiment adopts the led chip of vertical electrode structure, that is: chip bottom is as an end (negative or positive electrode) of electrode, as the input or the output of electric current; Corresponding, the top of chip is then as the other end of electrode, as the output or the input of electric current.Further combine accompanying drawing 1, in the present embodiment, two sub-layer 121 that are positioned at the head and the tail two ends are connected with negative pole with the positive pole of external circuit respectively, as the current input terminal and the output of entire module.The bottom that is positioned at the vertical electrode structure led chip on each sublayer 121 directly is electrically connected with its sublayer of being adhered to; The top then is connected with a bonding line 14; The end of this bonding line 14 connects adjacent sublayers, and like this, the led chip 13 on each sublayer all is electrically connected with adjacent sublayer 121 through bonding line 14; The led chip 13 of a plurality of sublayers 121 is linked in sequence according to this connected mode, forms circuit structure shown in Figure 2.Can find out, parallel with one another between a plurality of led chips 13 on each sublayer 121 in this LED module, form a chipset, and be to connect each other between the chipset of different sublayer 121, and then formed the circuit structure of string and series-parallel connection.
Be appreciated that; Above-mentioned bar shaped sublayer 121 can also further be divided into the rectangular block of a plurality of separate and word orders; Each rectangular block correspondence is provided with a led chip 13; And this structure is consistent with the effect that the bar shaped sublayer is produced, and in order to practice thrift processing procedure, metal level is divided into the bar shaped sublayer gets final product.
The described LED module of present embodiment adopts the led chip of vertical electrode structure, and its substrate can be silicon, carborundum or copper alloy etc., and this type chip bottom itself can be used as electrode one end; The chip top only need be provided with an electrode, connect a bonding line and get final product, and existing common LED module all adopts formal dress structure chip; Positive and negative electrode is adhered on its surface simultaneously, needs to connect two bonding lines, has occupied bigger area; The efficient lighting area of chip is reduced, and by comparison, the led chip of employing vertical electrode structure can increase the efficient lighting area of chip in the present embodiment; Adopt the module of this led chip to compare with existing most of LED module; Its luminous efficiency can improve 15lm/w, reaches more than the 100lm/w, and then effectively improves the performance and the quality of LED lighting apparatus.Further, present embodiment need not increase any parts, and the quantity of bonding line also reduced half thely, has exempted a part of bonding wire operation simultaneously yet, has reduced probability of failures such as rosin joint, broken string.So all right further economical with materials of present embodiment and simplification manufacturing process, thereby reduced cost.
As a kind of improvement of present embodiment, can heat conduction be set at the back side of substrate 11 and cover copper layer 15, with quick conductive, improve the heat dispersion of LED module.Further, the thickness of this copper-clad plate 15 is preferably 100～1000 μ m, and the excessive then cost of thickness is too high and weight is excessive, and therefore the too small then poor heat conduction of thickness is preferably 100～1000 μ m, can when improving thermal diffusivity, suitably control cost and weight.
In the present embodiment, the thickness of metal level 12 is preferably 50～500 μ m, helps conduction controllable costs simultaneously.
In the present embodiment, substrate 11 is preferably the AlN ceramic substrate.This AlN material forms through high temperature (1800 ℃) sintering, has the hexagonal crystal system wurtzite crystal structure, is the very strong compound of covalent bond, light weight (proportion is 3.61), and intensity is high, and high-fire resistance is corrosion-resistant, has good heat conductivility.Adopt the high-thermal conductivity A 1 N ceramic substrate can get rid of the support heating column in traditional led light source module again, make heat dissipation path shortening, sectional area increase thermal resistance decline (decline 7k/w reaches 6k/w).Module power is increased, the power of the integrated die set light source of this multicore is brought up to more than the 200W, and further improved luminous efficiency; Reduce light decay (light decay reached 5-8% in 2000 hours) simultaneously; Colour rendering index rises 10%, reaches 90; The reliability of corresponding LED lighting apparatus obviously strengthens simultaneously, and high pressure resistant, security performance improves.
Further, can through methods such as high-temperature oxydation and bonding at the AlN ceramic substrate back side formation one deck anaerobic Copper Foil, promptly form the above-mentioned copper layer 15 that covers, its thickness is preferably 100-1000 μ m.
Further; Can form above-mentioned metal level 12 in AlN ceramic substrate front through plating or chemical deposition; Metal level 12 has polytype, for example Ni:4.5um/Pd:0.075um/Au:0.1um, Ni:4.5um/Au:0.25um, Ag:0.5um, Ni:4.5um/Ag:3um etc.
Another kind as present embodiment improves, and the fixed form of led chip 13 can adopt the eutectic welding manner, and led chip 13 bottoms need be passed through and cover the gold processing this moment, helped the heat conduction of P-N knot; In addition, also can adopt the conductive silver paste bonding mode,, select the conductive silver paste of high thermal conductivity coefficient usually in order to improve heat-conducting effect.
In the present embodiment, bonding line 14 is preferably spun gold, and the welding of bonding line 14 gold ball bonding line capable of using machine equipment is accomplished, and spun gold one end connects the led chip top, and the other end connects the metal area that next serial core sheet is adhered to.
Another kind as present embodiment improves, and the surface of led chip 13 can be provided with fluorescent material, and the kind and the composition of fluorescent material dispose according to actual needs, to obtain the light of required color.Specifically can the mixture of fluorescent material and silica gel be coated in chip surface, and toast.Uniformity in order to ensure fluorescent material distributes can adopt spraying method.The consumption through regulating fluorescent material and the ratio of variety classes fluorescent material can be controlled the parameters such as light efficiency, colour temperature of LED module.
Another kind as present embodiment improves, and the front of substrate 11 also can be provided with insulating barrier 16, and this insulating barrier 16 is provided with around metal level 12, and its thickness is preferably 50～200 μ m.Insulating barrier 16 can standard and the light-emitting zone that limits the whole LED module; Guarantee the insulating properties of non-luminous region, promptly guarantee the security in the light source use; And make things convenient for the coating of fluorescent material and silica gel.This insulating barrier 16 specifically can be through forming at the metal level in substrate 11 fronts or the deposition of aluminium oxide material all around of metal alloy layer.
In the present embodiment; Positive electrode 171 and negative electrode 172 also can be set in the front of substrate 11; Splicing ear as entire module and external circuit; Two sub-layer 121 that promptly are positioned at the head and the tail two ends are connected with negative electrode 172 with this positive electrode 171 respectively, and 16 of above-mentioned insulating barriers can be laid in the top of this positive electrode 171 and negative electrode 172.In manufacturing process; Depositing metal layers 12 on substrate 11 at first; Then metal level 12 is advanced the shape subregion; Form a plurality of bar shapeds sublayer 121 and this positive and negative electrode, then the upper surface of positive electrode 171 and negative electrode 172 and substrate 11 positive around around the above-mentioned insulating barrier 16 of metal level deposition one deck.
Further preferred, positive electrode 171 can be provided with two pairs with negative electrode 172, and is symmetrically distributed in the two ends in substrate 11 fronts, and is stable to guarantee the power supply of LED module.
The above-mentioned LED module that provides has very high luminous efficiency, has good performance of heat dissipation simultaneously, and light decay is little and light source power is high, is particularly suitable for being assemblied in the various lighting apparatus as illuminating part.
The above is merely the preferred embodiment of the utility model; Not in order to restriction the utility model; Any modification of being done within all spirit and principles at the utility model, be equal to replacement and improvement etc., all should be included within the protection domain of the utility model.
Claims (10)
1. LED module; Comprise the substrate that can dispel the heat; The front of said substrate is provided with metal level, it is characterized in that: said metal level is divided into a plurality of separate bar shaped sublayers, is equipped with the led chip that at least one has the vertical electrode structure on each described sublayer; The bottom of said led chip is electrically connected with the sublayer that it is adhered to, and the top is electrically connected with adjacent sublayers through a bonding line.
2. LED module as claimed in claim 1 is characterized in that, what the back side of said substrate was provided with heat conduction covers the copper layer.
3. LED module as claimed in claim 2 is characterized in that, the said thickness that covers the copper layer is 100～1000 μ m.
4. LED module as claimed in claim 1 is characterized in that, said metal layer thickness is 50～500 μ m.
5. LED module as claimed in claim 1 is characterized in that, said led chip connects through eutectic weldering mode with substrate or be mutually bonding through conductive silver paste.
6. LED module as claimed in claim 1 is characterized in that the surface of said led chip is provided with phosphor powder layer.
7. like each described LED module of claim 1 to 6, it is characterized in that the front of said substrate also is provided with the insulating barrier that is provided with around said metal level.
8. LED module as claimed in claim 7 is characterized in that the front of said substrate also is provided with positive electrode and negative electrode, and said insulating barrier is laid in the top of said positive electrode and negative electrode.
9. LED module as claimed in claim 8 is characterized in that said positive electrode and negative electrode are provided with two pairs, and is symmetrically distributed in the both sides of said substrate front side.
10. lighting apparatus that comprises each described LED module of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120341681XU CN202253012U (en) | 2011-09-13 | 2011-09-13 | Light-emitting diode (LED) module and lighting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120341681XU CN202253012U (en) | 2011-09-13 | 2011-09-13 | Light-emitting diode (LED) module and lighting equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202253012U true CN202253012U (en) | 2012-05-30 |
Family
ID=46114253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120341681XU Expired - Fee Related CN202253012U (en) | 2011-09-13 | 2011-09-13 | Light-emitting diode (LED) module and lighting equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202253012U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| WO2022022266A1 (en) * | 2020-07-27 | 2022-02-03 | 北京芯海视界三维科技有限公司 | Light-emitting module and display device |
| CN114639309A (en) * | 2021-12-23 | 2022-06-17 | 蚌埠晶显科技有限公司 | Flexible transparent display screen and manufacturing method thereof |
-
2011
- 2011-09-13 CN CN201120341681XU patent/CN202253012U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| WO2022022266A1 (en) * | 2020-07-27 | 2022-02-03 | 北京芯海视界三维科技有限公司 | Light-emitting module and display device |
| CN114639309A (en) * | 2021-12-23 | 2022-06-17 | 蚌埠晶显科技有限公司 | Flexible transparent display screen and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105226167B (en) | A kind of luminous flexible LED filament of full angle and its manufacture method | |
| CN203277485U (en) | Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof | |
| CN201741721U (en) | Chip-on-board light emitting diode structure | |
| CN100508186C (en) | Surface mount light emitting type and preparation method thereof | |
| CN205900541U (en) | High -power LED light source of double -colored multicore | |
| CN201057441Y (en) | LED illuminating device | |
| CN202253012U (en) | Light-emitting diode (LED) module and lighting equipment | |
| CN203503708U (en) | Sapphire base LED encapsulation structure | |
| CN101852345B (en) | Light-emitting diode (LED) light source module | |
| CN102569573B (en) | Improve heat conducting LED chip | |
| CN102800800A (en) | Light-emitting diode device and production method thereof | |
| CN201910445U (en) | Light-emitting diode (LED) packaging structure | |
| CN202150488U (en) | Mounting structure used for LED wafers | |
| CN201893369U (en) | LED (Light-Emitting Diode) | |
| CN205065472U (en) | A superconductive aluminium base board of thermoelectric separation for projecting lamp | |
| CN201069771Y (en) | Mounting type LED | |
| CN204257641U (en) | Light-emitting device with light-transmitting flat plate | |
| CN101859863B (en) | Sapphire base novel inverted structure and application thereof | |
| TW201429009A (en) | Light emitting diode device and a method for manufacturing heat dissipating substrate | |
| CN103022335B (en) | Integrated electronic cooling module of diaphragm panel ceramic (DPC) substrate of light-emitting diode (LED) flip chip and manufacturing method of integrated electronic cooling module | |
| CN202523755U (en) | Light emitting device having heat-electricity separated structure | |
| CN102544300A (en) | LED packaging structure | |
| CN102208402A (en) | High-color-rendering light-emitting diode (LED) chip module, white light LED device and manufacturing method thereof | |
| CN206505946U (en) | A kind of LED/light source of specular removal | |
| CN202013885U (en) | LED (Light Emitting Diode) integrated packaging device arranged at upper and lower of electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Buji street, Longgang District of Shenzhen city cloth Lan Road 518000 Guangdong province No. 135 Gan Li six road No. 9 Patentee after: Shenzhen Hoyol Opto Electronic Co., Ltd. Address before: 518000, Gan Li Science Park, 135 Shenzhen Road, Buji street, Longgang District, Guangdong, China Patentee before: Hongya Photoelectronics Co., Ltd., Shenzhen City |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20200913 |