CN203250779U - Light emitting diode packaging structure - Google Patents
Light emitting diode packaging structure Download PDFInfo
- Publication number
- CN203250779U CN203250779U CN2012206941630U CN201220694163U CN203250779U CN 203250779 U CN203250779 U CN 203250779U CN 2012206941630 U CN2012206941630 U CN 2012206941630U CN 201220694163 U CN201220694163 U CN 201220694163U CN 203250779 U CN203250779 U CN 203250779U
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- China
- Prior art keywords
- transparent
- transparency carrier
- led
- package structure
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Led Device Packages (AREA)
Abstract
The utility model relates to a light emitting diode packaging structure comprising a transparent substrate, LED chips and wire supports; the wire supports are installed on the transparent substrate, the LED chips are fixed on the transparent substrate, and electrodes of the LED chips are connected to the wire supports; and the transparent substrate is made of transparent glass or a transparent sapphire substrate or transparent ceramic or organic transparent plastic. According to the utility model, the transparent glass or the transparent sapphire substrate or the transparent ceramic or the organic transparent plastic is employed as the transparent substrate, and the transparent glass, the transparent sapphire substrate, the transparent ceramic and the organic transparent plastic are low in thermal conductivity; so that the heat dissipation effect is good, the prolongation of the service life of the LED chips is facilitated, and the prolongation of the service life of the light emitting diode packaging structure is facilitated.
Description
[technical field]
The utility model relates to the LED technical field, specifically a kind of package structure for LED.
[background technology]
Energy shortage is the hot issue of the world today, and in illuminating industry, led light source is because multiple advantages such as its efficient, energy-saving and environmental protection, long-lives, is that to replace energy consumption high, the first-selection of the traditional lighting that the life-span is short.The chip of existing led light source all is to be encapsulated on nontransparent substrate, and the most frequently used nontransparent substrate is exactly aluminium base.The defective of existing product is that chip package is blocked by nontransparent substrate in the last light splitting of nontransparent substrate, and the emission angle maximum of light also only has 180 degree, and the utilance of light is low, and structure is single and adopted the structure production cost of aluminium base also higher.
The CN201866576 patent discloses a kind of led light source, and described led light source comprises transparency carrier, chip, support, gold thread and fluorescent material, and chip is connected by gold thread with support, and chip package is in transparency carrier, and transparency carrier is provided with inner groovy; Fluorescent material is divided into phosphor powder layer and lower phosphor powder layer, and upper phosphor powder layer is located at the chip top, and lower phosphor powder layer is located at the chip below; Upper phosphor powder layer, chip and lower phosphor powder layer are encapsulated in the inner groovy of transparency carrier; Described transparency carrier is transparent organic glass or transparent inorganic glass, and described transparent inorganic glass is pebble glass.
But because polymethyl methacrylate or transparent inorganic glass conductive coefficient are lower, be unfavorable for the led light source heat radiation, therefore bad according to the led light source heat radiation of said structure, be unfavorable for the led light source life.
[utility model content]
The technical problems to be solved in the utility model provides a kind of package structure for LED better, that the life-span is long that dispels the heat.
Above-mentioned technical problem is achieved through the following technical solutions:
A kind of package structure for LED is characterized in that, comprises transparency carrier, led chip and wire support; Described wire support is installed on described transparency carrier, and described led chip is fixed on the described transparency carrier, and the electrode of described led chip is connected with described wire support; Described transparency carrier is clear glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic.
The light transmittance of described transparency carrier is greater than 90%.
The single face of described transparency carrier, two-sided or three-dimensional surface evenly are coated with transparent high heat conduction film.
The thickness of described transparent high heat conduction film is between 2 to 5 μ m.
The thickness of described transparent high heat conduction film is 2 μ m.
The light transmittance of described transparent high heat conduction film greater than 90%, conductive coefficient is more than or equal to 400w/mk.
Described transparent high heat conduction film adopts diamond film or class diamond film or diamond-like carbon film.
Described wire support comprises negative pole support and anodal support, and the negative pole support comprises the negative open traverse that a negative main traverse line and a plurality of and negative main traverse line are connected, and anodal support comprises the positive open traverse that a positive main traverse line and a plurality of and positive main traverse line are connected; The negative electrode of led chip, positive electrode are connected respectively the positive open traverse of the negative open traverse of negative pole support, anodal support.
Comprise that also one is fixed on the transparent enclosure glue-line on the transparency carrier, wire support is provided with outer negative pole tie point and the outer anodal tie point of external connection; The transparent enclosure glue-line has covered led chip and wire support, and exposes outer negative pole tie point and the outer anodal tie point of wire support.
As seen from the above technical solution, the utility model uses the low clear glass of conductive coefficient or transparent sapphire substrate as transparency carrier, and good heat dissipation effect is beneficial to the led chip life, thereby is beneficial to the life of this product.The utility model uses diamond film or class diamond film or diamond-like carbon film as transparent high heat conduction film, utilize transparent high heat conduction film to have good insulating properties, higher operating temperature, higher pyroconductivity, further improve radiating effect, be beneficial to the life of led chip and this product.
[description of drawings]
Fig. 1 is the sectional view of transparency carrier;
Fig. 2 is the sectional view that is coated with the transparency carrier of transparent high heat conduction film;
Fig. 3 is for being provided with the vertical view of wire support at transparency carrier;
Fig. 4 is for being provided with the vertical view of wire support, led chip at transparency carrier;
Fig. 5 is the sectional view that transparency carrier is provided with packed LED chip;
Fig. 6 is the sectional view that transparency carrier is provided with flip LED chips;
Fig. 7 is the vertical view of package structure for LED;
Fig. 8 is that Fig. 7 is along the sectional view of A-A.
[embodiment]
Extremely shown in Figure 6 such as Fig. 1, a kind of package structure for LED that the utility model provides, it comprises transparency carrier 1, led chip 5 and wire support 34, wire support 34 is installed on transparency carrier 1, led chip 5 is fixed on the transparency carrier, and the electrode of led chip 5 is connected with wire support 34; Described transparency carrier 1 is clear glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic.
Wherein, the light transmittance of transparency carrier 1 is greater than 90%.
The single face of described transparency carrier 1, two-sided or three-dimensional surface evenly are coated with transparent high heat conduction film 2, and transparent high heat conduction film 2 requires parameter to be: light transmittance greater than 90%, conductive coefficient is more than or equal to 400w/mk; The thickness of transparent high heat conduction film 2 (comprises 2 μ m and 5 μ m) between 2 to 5 μ m, value is that 2 μ m are more excellent; Usually, transparent high heat conduction film 2 adopts diamond film or class diamond film or diamond-like carbon film.
Usually, wire support 34 is installed on the face of the transparent high heat conduction film 2 of being coated with of transparency carrier 1.
Wire support 34 comprises negative pole support 3 and anodal support 4, negative pole support 3 all becomes fourchette shape structure with anodal support 4, specifically, negative pole support 3 comprises the negative open traverse 32 that a negative main traverse line 31 and a plurality of and negative main traverse line 31 are connected, and anodal support 4 comprises the positive open traverse 42 that a positive main traverse line 41 and a plurality of and positive main traverse line 41 are connected; Negative pole support 3 and anodal support 4 are located at the same face of transparency carrier 1; The negative electrode of led chip 5, positive electrode are connected respectively the negative open traverse 32 of negative pole support 3, the positive open traverse 42 of anodal support 4.
As shown in Figure 7 and Figure 8, package structure for LED comprises that also one is fixed on the transparent enclosure glue-line 6 on the transparency carrier, wire support 34 is provided with outer negative pole tie point 35 and the outer anodal tie point 45 of external connection, specifically, outer negative pole tie point 35 and outer anodal tie point 45 respectively correspondence be located at negative main traverse line 31, positive main traverse line 41; Transparent enclosure glue-line 6 has covered led chip 5 and wire support 34, and exposes outer negative pole tie point 35 and the outer anodal tie point 45 of wire support 34.
Divide from functional characteristics, above-mentioned led chip comprises horizontal light emitting diode (LED), crystal-coated light-emitting diodes (FCLED), alternating-current light emitting diode (ACLED), high voltage type light-emitting diode (HVLED).
Divide from packaged type, led chip is divided into packed LED chip and flip LED chips, and flip LED chips has the luminous efficiency larger than packed LED chip; As shown in Figure 7, when led chip adopts packed LED chip, the positive electrode of packed LED chip, negative electrode connect the negative open traverse of negative pole support, the positive open traverse of anodal support by plain conductor respectively, and the sapphire face of packed LED chip is by connecting transparency carrier with transparent crystal-bonding adhesive; As shown in Figure 8, when led chip employing flip LED chips, flip LED chips is connected with the wire support of transparency carrier by its transparent electrode, and the sapphire face of flip LED chips is the forward light-emitting area.
The manufacture method of above-mentioned package structure for LED specifically may further comprise the steps:
1), the single face on transparency carrier 1, two-sided or three-dimensional surface evenly are coated with above-mentioned transparent high heat conduction film 2, transparency carrier 1 is clear glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic, and transparent high heat conduction film 2 adopts diamond film or class diamond film or diamond-like carbon film;
2), on the face of the transparent high heat conduction film 2 of being coated with of transparency carrier 1, above-mentioned wire support 34 is set;
3), led chip 5 is fixed on the transparency carrier 1, the electrode with led chip 5 is connected with wire support 34;
4), using transparent enclosure glue that led chip 5 and wire support 34 are covered forms transparent enclosure glue-lines 6, exposes outer negative pole tie point 35 and the outer anodal tie point 45 of wire support.
The technique that is coated with diamond film or class diamond film or diamond-like carbon film at transparency carrier (clear glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic) in the above-mentioned steps 1 can adopt in the following technique a kind of: PVD magnetron sputtering membrane process, plasma enhanced chemical vapor deposition method, sputter physical vaporous deposition, plasma enhanced chemical vapor deposition method; Certainly, can be the manufacture method of a disclosed kind diamondlike thin film layer in the utility model application of CN101096752 with reference to application number, may further comprise the steps: a reative cell (a) is provided, and a substrate is inserted in this reative cell; (b) pressure of this reative cell is lower than below the 10-6torr; (c) import the gas of at least one carbon containing in this reative cell; And (d) use a graphite palladium material with sputter-deposited one class diamondlike thin film layer in this substrate surface; Wherein, such diamondlike thin film layer has laminated structure, and the laminated structure of such diamondlike thin film layer is arranged in this substrate surface.
The utility model is not limited to above-described embodiment, based on simple replacement above-described embodiment, that do not make creative work, should belong to the scope that the utility model discloses.
Claims (9)
1. a package structure for LED is characterized in that, comprises transparency carrier, led chip and wire support; Described wire support is installed on described transparency carrier, and described led chip is fixed on the described transparency carrier, and the electrode of described led chip is connected with described wire support; Described transparency carrier is clear glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic.
2. package structure for LED according to claim 1 is characterized in that, the light transmittance of described transparency carrier is greater than 90%.
3. package structure for LED according to claim 1 is characterized in that, the single face of described transparency carrier, two-sided or three-dimensional surface evenly are coated with transparent high heat conduction film.
4. package structure for LED according to claim 3 is characterized in that, the thickness of described transparent high heat conduction film is between 2 to 5 μ m.
5. package structure for LED according to claim 4 is characterized in that, the thickness of described transparent high heat conduction film is 2 μ m.
6. package structure for LED according to claim 3 is characterized in that, the light transmittance of described transparent high heat conduction film greater than 90%, conductive coefficient is more than or equal to 400w/mk.
7. package structure for LED according to claim 3 is characterized in that, described transparent high heat conduction film adopts diamond film or class diamond film or diamond-like carbon film.
8. package structure for LED according to claim 1, it is characterized in that, described wire support comprises negative pole support and anodal support, the negative pole support comprises the negative open traverse that a negative main traverse line and a plurality of and negative main traverse line are connected, and anodal support comprises the positive open traverse that a positive main traverse line and a plurality of and positive main traverse line are connected; The negative electrode of led chip, positive electrode are connected respectively the positive open traverse of the negative open traverse of negative pole support, anodal support.
9. according to claim 1 to the described package structure for LED of 8 any one, it is characterized in that, comprise that also one is fixed on the transparent enclosure glue-line on the transparency carrier, wire support is provided with outer negative pole tie point and the outer anodal tie point of external connection; The transparent enclosure glue-line has covered led chip and wire support, and exposes outer negative pole tie point and the outer anodal tie point of wire support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206941630U CN203250779U (en) | 2012-12-14 | 2012-12-14 | Light emitting diode packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206941630U CN203250779U (en) | 2012-12-14 | 2012-12-14 | Light emitting diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203250779U true CN203250779U (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012206941630U Expired - Lifetime CN203250779U (en) | 2012-12-14 | 2012-12-14 | Light emitting diode packaging structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN203250779U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325916A (en) * | 2012-12-14 | 2013-09-25 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN108878628A (en) * | 2017-05-08 | 2018-11-23 | 朗德万斯公司 | Semiconductor light engine for spot |
-
2012
- 2012-12-14 CN CN2012206941630U patent/CN203250779U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325916A (en) * | 2012-12-14 | 2013-09-25 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| WO2014090156A1 (en) * | 2012-12-14 | 2014-06-19 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN108878628A (en) * | 2017-05-08 | 2018-11-23 | 朗德万斯公司 | Semiconductor light engine for spot |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131023 |
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| CX01 | Expiry of patent term |