CN103794602A - All-directional light-outlet efficient LED module device - Google Patents
All-directional light-outlet efficient LED module device Download PDFInfo
- Publication number
- CN103794602A CN103794602A CN201410035441.5A CN201410035441A CN103794602A CN 103794602 A CN103794602 A CN 103794602A CN 201410035441 A CN201410035441 A CN 201410035441A CN 103794602 A CN103794602 A CN 103794602A
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- dlc
- transparent heat
- heat conduction
- led module
- module device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention provides an all-directional light-outlet efficient LED module device which comprises a sapphire substrate. LED chips are arranged on the sapphire substrate, the upper layers and the lower layers of the LED chips are respectively plated with a DLC transparent heat conduction film, one sides of the chips to be fixed are plated with the corresponding DLC transparent heat conducting film, and a prefabricated circuit or prefabricated metal electrodes serving as leads connected with an external power source is/are manufactured on the DLC transparent heat conducting film on the lower layers of the LED chips. According to the all-directional light-outlet efficient LED module device, sapphire is used as the multi-chip module substrate, and the full-directional light outlet can be achieved; the sapphire substrate is plated with the DLC transparent heat conducting films, and the radiating performance of an LED module can be greatly improved.
Description
(1) technical field
The invention belongs to LED encapsulation technology field, be specifically related to a kind of efficient LED module device of comprehensive bright dipping.
(2) background technology
LED has the advantages such as high light efficiency, low power consuming, long-life, environmental protection, is optimal conventional light source substitute.But LED lamp also exists many problems at aspects such as luminous efficiency, heat radiation, light fixture weight at present, wherein, the maximum bottleneck that hinders LED performance boost dispels the heat exactly.In traditional LED structure light source packaged type, low-power LED multichip packaging structure, because caloric value is little, adopts PCB substrate to do support.And high-capacity LED, for meeting its heat radiation requirement, often adopts MCPCB substrate, ceramic substrate or DCB substrate.Wherein good heat dispersion performance is exactly MCPCB encapsulation, in the good metallic substrates of thermal conductivity, makes successively insulating barrier and circuit layer, more just chip or lamp pearl connect thereon.The caloric requirement that chip produces just can be transmitted in heat-conducting metal substrate by insulating barrier.But insulating barrier is generally made up of macromolecular material, its conductive coefficient is only 0.2 ~ 0.5W/mK, has a strong impact on overall heat-conducting effect, and the heat that causes chip to produce can not shed in time.Especially for high-power die or chip module, its heat dispersion is not by far up to the mark.
In addition, because conventional package substrates is light tight, the light that light source sends cannot penetrate from the back side, after must and absorbing through multiple reflections, could penetrate from front, cause external quantum efficiency low, and then the light extraction efficiency of the even whole lamp of reduction LED module is low, and rising angle is little.
Diamond like carbon film (DLC) is the amorphous carbon-film with the carbon atom spacial framework of SP2 and SP3 hydridization, has the performance that high optical transmission, thermal conductivity, insulating properties, resistance to chemical corrosion and resistance to wear etc. are excellent, and it exceedes thermal conductivity 400W/m.K.Have about the research that replaces the macromolecular material insulating barrier between conventional metals circuit and metal substrate with DLC film, can effectively improve the thermal conductivity of insulating barrier.But this structure exists conventional package substrates because of series of problems such as the light tight rising angle bringing are little, generation heat is more equally.
(3) summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, utilize the light transmission of sapphire excellence and thermal coefficient of expansion and the DLC film advantage such as match, a kind of efficient LED module device of comprehensive bright dipping of high reliability is provided.
The object of the present invention is achieved like this: it comprises sapphire substrate, on sapphire substrate, be provided with LED chip, the upper and lower two-layer transparent heat conduction film of DLC that is all coated with of LED chip, treat to be coated with the transparent heat conduction film of DLC in fixed chip one side, on the transparent heat conduction film of the DLC of lower floor of LED chip, be manufactured with prefabricated circuit or as with the prefabricated metal electrode of external power source connecting lead wire.
The present invention also has some technical characterictics like this:
1, described sapphire substrate is two-sided sapphire polished silicon wafer, and polished silicon wafer is rectangle, square or circular;
2, described LED chip is at least one group of identical photochromic or different photochromic chips, between chip, is realized and being interconnected by wire or prefabricated circuit;
3, described LED chip is fixed on the transparent heat conduction film of DLC with the form of formal dress or upside-down mounting;
4, described LED chip fixes on the transparent heat conduction film of DLC with crystal-bonding adhesive or eutectic solid welding;
5, the fluorescent material that the transparent heat conduction film of described DLC outside is coated with fluorescent glue or evenly sprays.
The invention discloses a kind of LED module device architecture, be specifically related to one take sapphire as substrate, improve the efficient LED module device of the high reliability of device heat dispersion, comprehensive bright dipping with DLC film.The present invention does chip package base plate with sapphire polished silicon wafer, treats to be coated with in fixed chip one side the transparent heat conduction film of DLC at sapphire substrate.On the transparent heat conduction film of DLC, make prefabricated circuit, or only on the transparent heat conduction film of substrate two ends DLC, make prefabricated metal electrode, as the lead-in wire being connected with external power source.At least one core assembly sheet is fixed on the transparent heat conduction film of DLC, between between chip and two ends chip electrode and prefabricated metal electrode, realizes and interconnecting by wire or prefabricated circuit.Plate again the transparent heat conduction film of one deck DLC in sapphire substrate fixed chip one side, form sandwich, so far form a naked LED illuminating module.As the light that chip sent need to carry out Color Conversion, be coated fluorescent glue or evenly spray last layer fluorescent material in total outside.The present invention adopts sapphire as multi-chip modules substrate, can realize comprehensive bright dipping; On sapphire substrate, plate the transparent heat conduction film of DLC, can significantly improve the heat dispersion of LED module, and double-deck DLC membrane structure thermal diffusivity is better than single thin film structure; The thermal coefficient of expansion of the transparent heat conduction film of DLC and sapphire approach, and encapsulate more safe and reliable; This structure is conducive to reduce the total reflection of light, improves light extraction efficiency, reduces the generation of heat simultaneously.
The invention has the beneficial effects as follows: 1) adopt sapphire surface processed wafer as multi-chip modules substrate, the light that active layer sends can see through substrate, make the LED chip module can comprehensive bright dipping; 2) diamond like carbon film (DLC) has excellent heat conduction, insulation property, plates the transparent heat conduction film of DLC on sapphire, and the heat that chip produces can be directly transferred to DLC film, and then derives fast by two ends metal electrode.Can significantly improve the heat dispersion of LED module, effectively reduce chip PN junction temperature, avoid chip to damage because of overheated; 3) LED chip is all surrounded by the transparent heat conduction film of DLC up and down, and DLC transparent heat conduction film in top plays the double action of heat conduction and protection chip, and thermal diffusivity is better than single thin film structure; 4) thermal coefficient of expansion of the transparent heat conduction film of DLC and sapphire approach, and have improved the reliability of encapsulation; 5) refractive index of DLC film is between semi-conducting material and sapphire, is conducive to reduce the possibility of the light generation total reflection that chip sends, and improves light extraction efficiency, reduces the generation of heat simultaneously.
(4) accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is profile.
(5) embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
In conjunction with Fig. 1-2, the comprehensive bright dipping high light efficiency LED module device in the present embodiment is strip, and Fig. 1 is LED device structural representation in the longitudinal direction, the profile that Fig. 2 is Width.This device is made up of sapphire substrate 1, the transparent heat conduction film 2 of DLC, prefabricated metal electrode 3, chip 4, wire 5 and fluorescent glue 6.In embodiment, sapphire substrate 1 is strip sapphire polished silicon wafer, wafer length 10-100mm, width 0.1-10mm, thickness 0.2-2mm.Surface is after processing is processed, and surface roughness is Ra0.1-400nm.Plate the transparent heat conduction film 2 of one deck DLC at sapphire substrate one side surface by PECVD method, on the transparent heat conduction film of sapphire substrate two ends DLC, make metal electrode 3, be used as the lead-in wire being connected with external power source.One core assembly sheet 4 is bonded on the transparent heat conduction film of DLC with crystal-bonding adhesive.Between chip, interconnect by wire 5, chipset two end electrodes is connected with prefabricated metal electrode 3 with wire.On the sapphire substrate of bonding chip, plate the transparent heat conduction film of one deck DLC, finally, at the outside coated one deck fluorescent glue 6 of the whole LED module device except reserved metal electrode, the comprehensive high light efficiency LED module of strip device so far completes again.
In this LED module device architecture, the light that chip sends can comprehensively send, and the transparent heat conduction thermal conductivity of thin film of DLC is high, and the heat that chip produces can be transmitted to metal electrode by the transparent heat conduction film of DLC very soon, and then outwards derives.In addition, the transparent heat conduction film refractive index of DLC is 18-2.2, between semi-conducting material and sapphire, can reduce the total reflection of light, increases light emission rate, reduces heat generation.Can obtain the efficient LED module device of comprehensive bright dipping by above structure.
The present invention only introduces a kind of LED module device, and this introduction is only applicable to the understanding to the principle of the invention.Therefore, for those of ordinary skill in the art, in the situation that not departing from substantive characteristics of the present invention, may embodiment is out of shape and be changed, all these distortion and change all should belong to claim protection range of the present invention.
Claims (6)
1. the efficient LED module device of a comprehensive bright dipping, it is characterized in that it comprises sapphire substrate, on sapphire substrate, be provided with LED chip, the upper and lower two-layer transparent heat conduction film of DLC that is all coated with of LED chip, treat to be coated with the transparent heat conduction film of DLC in fixed chip one side, on the transparent heat conduction film of the DLC of lower floor of LED chip, be manufactured with prefabricated circuit or as with the prefabricated metal electrode of external power source connecting lead wire.
2. the efficient LED module device of a kind of comprehensive bright dipping according to claim 1, is characterized in that described sapphire substrate is two-sided sapphire polished silicon wafer, and polished silicon wafer is rectangle, square or circular.
3. the efficient LED module device of a kind of comprehensive bright dipping according to claim 2, is characterized in that described LED chip is at least one group of identical photochromic or different photochromic chips, between chip, is realized and being interconnected by wire or prefabricated circuit.
4. the efficient LED module device of a kind of comprehensive bright dipping according to claim 3, is characterized in that described LED chip is fixed on the transparent heat conduction film of DLC with the form of formal dress or upside-down mounting.
5. the efficient LED module device of a kind of comprehensive bright dipping according to claim 4, is characterized in that described LED chip crystal-bonding adhesive or eutectic solid welding fix on the transparent heat conduction film of DLC.
6. the efficient LED module device of a kind of comprehensive bright dipping according to claim 5, is characterized in that the fluorescent material that the described transparent heat conduction film of DLC outside is coated with fluorescent glue or evenly sprays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410035441.5A CN103794602A (en) | 2014-01-26 | 2014-01-26 | All-directional light-outlet efficient LED module device |
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| CN201410035441.5A CN103794602A (en) | 2014-01-26 | 2014-01-26 | All-directional light-outlet efficient LED module device |
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| CN103794602A true CN103794602A (en) | 2014-05-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347782A (en) * | 2014-10-31 | 2015-02-11 | 华南理工大学 | High-performance insulation layer for AlSiC composite base plate |
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Application publication date: 20140514 |