CN101364626A - LED device - Google Patents
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- CN101364626A CN101364626A CNA2007101432407A CN200710143240A CN101364626A CN 101364626 A CN101364626 A CN 101364626A CN A2007101432407 A CNA2007101432407 A CN A2007101432407A CN 200710143240 A CN200710143240 A CN 200710143240A CN 101364626 A CN101364626 A CN 101364626A
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- emitting diode
- diode assembly
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Abstract
An LED device includes a base, a base plate, a support, an LED chip, a first mixed colloid and a second mixed colloid, wherein the first mixed colloid and the second mixed colloid include colloid materials and insulating and heat-conducting materials; the heat-conducting materials include diamond powder, diamond-like powder or ceramic powder; the base plate and the support are arranged on the base; the first mixed colloid is applied between the base plate and the LED chip, so as to adhere and fix the LED chip and enhance the heat dissipation effect; and the second mixed colloid is poured into the base so as to coat the base plate and the LED chip, reduce the difference in the refractive index and further increase the total reflection angle and the light extraction efficiency.
Description
Technical field
The present invention relates to a kind of package structure for LED, and be particularly related to a kind of package structure for LED that utilizes new colloid mixture to encapsulate.
Background technology
(Light Emitting Diode is LED) because characteristics such as its reaction speed is fast, volume is little, low power consumption, low in calories, long service life replace traditional lighting light fixtures such as incandescent lamp bulb and Halogen lamp LED to light-emitting diode gradually.Therefore, LED is used in the status indicator lamp of electronic installation from the beginning, and development and application is to the backlight that becomes liquid crystal display, expands to illumination in electrical lighting or even the projector etc. again, the application of LED still along with development of technology in the middle of extending constantly.
Along with the lifting gradually of LED brightness and luminous efficiency, for encapsulation procedure, also faced great double challenge.Aspect heat dissipation, the high heat that is produced among high power (High Power) LED not only can cause the LED brightness deterioration if can not join high efficiency heat radiation, also can shorten the useful life of LED.And aspect optical property, the most of epoxy resin that adopts of existing LED packing colloid, and the optical property of epoxy resin can be subjected to the influence of temperature and ultraviolet irradiation.Therefore, under normal operating condition, all can meet with the difficult problem that optical clarity causes refractive index to reduce along with the time decay.
Existing packing forms is just directly to put glue, sealing (Auto Encapsulate) or pressing mold (Molding) afterwards at solid core (Die Bond), lead-in wire (Wire Bond).The solid core mode of tradition then is to utilize the mode of elargol or transparent insulation glue that chip (chip) is bonded on the substrate of packaging body; The heat energy that assembly produces then is to reach module board by the mode of conducting from component internal, is passed on the substrate or hot receiver (heat sink) of packaging body via elargol or transparent insulation glue again.And along with the lifting of luminous power and the increase of serviceability temperature, elargol and transparent insulation glue a large amount of heat of can not having loaded has so been transmitted, to such an extent as to cause the light decay of assembly and heat to decline, and then make component failures.
Moreover its refractive index of the composition material of light-emitting diode and laser diode is greater than 2.5, and generally encapsulates the glue material of usefulness or its refractive index of resin less than 1.5, and the refractive index of air is 1.Because the refractive index difference of chip (chips), assembly (devices) and encapsulating material is very big, causes the light output of encapsulation back luminescence component too small, and make light extraction efficiency reduce because of the angle of total reflection.
Therefore, for the requirement of encapsulating material in the LED encapsulating structure, except original intensity and thermal property, pay attention to especially for optical property.
Summary of the invention
Purpose of the present invention is exactly, and a kind of light-emitting diode assembly is provided, the effect that the colloid mixture that is mixed by glue material and insulating heat-conduction material provides led chip to stick together and dispel the heat simultaneously.
Another object of the present invention is to be, a kind of light-emitting diode assembly is provided, and utilization encapsulates than the colloid mixture that existing encapsulating material has high index, increases the total reflection angle and also strengthens light extraction efficiency.
To achieve these goals, the present invention proposes a kind of light-emitting diode assembly, comprises a pedestal, a substrate, a support, a led chip, one first colloid mixture and one second colloid mixture.
Substrate be set up on the pedestal, and first colloid mixture coats between substrate and the led chip, in order to led chip is bonded on the substrate.More be provided with a lead that is connected to support on the led chip, in order to conducting led chip upwards luminous (Face Up).Second colloid mixture is poured in the pedestal in order to coat substrate, led chip and lead.
Wherein, first colloid mixture and second colloid mixture are evenly mixed by glue material and diamond dust (DiamondCarbon), class diamond dust (Diamond-Like Carbon) or ceramic powder (Ceramic).Wherein the glue material is epoxy resin (Epoxy Resin), silicones (Silicone Resin) or Merlon (PolyCarbonate), and ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.Therefore, mixed glue material not only has tackness, and has more higher thermal conductance and insulating properties compared to existing packing colloid.
First colloid mixture is located between substrate and the led chip, by its tackness fixed L ED chip on substrate, the heat that more utilizes thermal conduction characteristic that led chip is distributed when luminous reaches pedestal by substrate and dispels the heat, stick together fixing elargol or transparent insulation glue merely compared to existing, can obtain better radiating effect.
In addition, because led chip is upwards luminous, and refractive index is greater than about 2.5, and the refractive index of second colloid mixture is between about 1.5 to 2.5, compared to existing packaging adhesive material body approximately less than 1.5 refractive index, the difference of refractive index between led chip and the encapsulating material be can reduce, and then total reflection angle and light extraction efficiency increased.
Therefore, compared to existing light-emitting diode assembly, light-emitting diode assembly of the present invention can have following effect:
1. the colloid mixture in the embodiment of the invention forms via even mix insulation Heat Conduction Material and glue material, it is used for replacing existing elargol or transparent insulation glue, led chip is sticked together be fixed on the substrate, more the heat that led chip is distributed when luminous by its thermal conduction characteristic reaches pedestal by substrate and dispels the heat, in order to obtain better radiating effect.
In the embodiment of the invention refractive index of colloid mixture between about 1.5 to 2.5, and the refractive index of led chip is approximately greater than 2.5, therefore compared to the existing refractive index of utilizing approximately less than 1.5 packaging adhesive material body, the difference of refractive index can be reduced between led chip 400 and the encapsulating material, and then increases total reflection angle and light extraction efficiency.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structural representation of the light-emitting diode assembly of first embodiment of the invention;
Fig. 2 is the structural representation of the light-emitting diode assembly of second embodiment of the invention;
Fig. 3 is the structural representation of the light-emitting diode assembly of third embodiment of the invention;
Fig. 4 is the structural representation of the light-emitting diode assembly of fourth embodiment of the invention;
Fig. 5 is the structural representation of the light-emitting diode assembly of fifth embodiment of the invention.
Wherein, Reference numeral
100: pedestal 200: substrate
300: support 400:LED chip
520: the second colloid mixtures of 510: the first colloid mixtures
540: the four colloid mixtures of 530: the three colloid mixtures
900: lead 950: metal coupling
960: the weld pad group
Embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are done concrete description:
Please refer to Fig. 1, be the structural representation of the light-emitting diode assembly of first embodiment of the invention.The light-emitting diode assembly of present embodiment comprises a pedestal 100, a substrate 200, a support 300, a led chip 400, one first colloid mixture 510 and a packaging adhesive material body 800.
Please refer to Fig. 2, be the structural representation of the light-emitting diode assembly of second embodiment of the invention.The present embodiment and the first embodiment difference are more to comprise second colloid mixture 520, second colloid mixture, 520 sides coat this substrate 200 and this chip 400, in first embodiment, first colloid mixture 510 is only arranged in order to heat radiation, present embodiment is by the setting of second colloid mixture 520, the contact area of increase and led chip 400 is in order to strengthen its radiating efficiency.
Please refer to Fig. 3, be the structural representation of the light-emitting diode assembly of third embodiment of the invention.What present embodiment was different with first embodiment with the 3rd embodiment is in more comprising the 3rd colloid mixture 530.The composition material of the 3rd colloid mixture 530 is identical with the composition material of first colloid mixture 510.
The 3rd colloid mixture 530 replaces packaging adhesive material body 800 in order to coat substrate 200, led chip 400 and lead 900.Because led chip 400 is upwards luminous, and refractive index is greater than about 2.5, and the refractive index of the 3rd colloid mixture 530 is between about 1.5 to 2.5, compared to existing packaging adhesive material body approximately less than 1.5 refractive index, the difference of refractive index between led chip 400 and the encapsulating material be can reduce, and then total reflection angle and light extraction efficiency increased.
Please refer to Fig. 4, it is the structural representation of the light-emitting diode assembly of fourth embodiment of the invention.The present embodiment and the first embodiment difference are the 4th colloid mixture 540.Wherein, the composition material of first colloid mixture 510 among the composition material of the 4th colloid mixture 540 and first embodiment is identical.
Led chip 400 in the present embodiment adopts flip-chip encapsulation technology (Flip Chip), be connected to a weld pad group 960 on the substrate 200 by one group of metal coupling 950 (Bump), it is luminous downwards in order to this led chip 400 of conducting with support 300 to utilize lead 900 to electrically connect weld pad groups 960 again.
The 4th colloid mixture 540 is located between substrate 200 and the led chip 400, by its tackness fixed L ED chip 400 on substrate 200, the heat that more utilizes thermal conduction characteristic that led chip 400 is distributed when luminous reaches pedestal 100 by substrate 200 and dispels the heat, stick together fixing elargol or transparent insulation glue merely compared to existing, can obtain better radiating effect.
Please refer to Fig. 5, it is the structural representation of the light-emitting diode assembly of fifth embodiment of the invention.Present embodiment and the 4th embodiment difference are more to comprise the 5th colloid mixture 550.Wherein, the composition material of the 5th colloid mixture 550 is identical with the composition material of the 4th colloid mixture 540.
The 5th colloid mixture 550 replaces packaging adhesive material body 800 in order to coat substrate 200, led chip 400 and lead 900.Because led chip 400 is luminous downwards, and refractive index is greater than about 2.5, and the refractive index of the 4th colloid mixture 540 and the 5th colloid mixture 550 is between about 1.5 to 2.5, compared to existing packaging adhesive material body approximately less than 1.5 refractive index, the difference of refractive index between led chip 400 and the encapsulating material be can reduce, and then total reflection angle and light extraction efficiency increased.
By the foregoing description as can be known, light-emitting diode assembly of the present invention has following effect and advantage:
1. the colloid mixture in the embodiment of the invention forms via even mix insulation Heat Conduction Material and glue material, it is used for replacing existing elargol or transparent insulation glue, led chip 400 is sticked together be fixed on the substrate 200, more the heat that led chip 400 is distributed when luminous by its thermal conduction characteristic reaches pedestal 100 by substrate 200 and dispels the heat, in order to obtain better radiating effect.
In the embodiment of the invention refractive index of colloid mixture between about 1.5 to 2.5, and the refractive index of led chip 400 is approximately greater than 2.5, therefore encapsulate less than 1.5 packaging adhesive material body approximately compared to the existing refractive index of utilizing, the light-emitting diode assembly of the embodiment of the invention, the difference of refractive index can be reduced between led chip 400 and the encapsulating material, and then increases total reflection angle and light extraction efficiency.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (18)
1. light-emitting diode assembly, comprise a pedestal, a substrate, a support, a led chip and one first colloid mixture, wherein this substrate is set up on this pedestal with this, and this led chip is bonded on this substrate by this first colloid mixture, it is characterized in that:
This first colloid mixture comprises a glue material and an insulating heat-conduction material, and wherein this insulating heat-conduction material comprises diamond dust, class diamond dust or ceramic powder.
2. light-emitting diode assembly according to claim 1 is characterized in that, this glue material is epoxy resin (Epoxy Resin), silicones (Silicone Resin) or Merlon (Poly Carbonate).
3. light-emitting diode assembly according to claim 2 is characterized in that, this ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.
4. light-emitting diode assembly according to claim 1 is characterized in that, more comprises one second colloid mixture, and it is coated on this led chip and this substrate.
5. light-emitting diode assembly according to claim 4 is characterized in that, this second colloid mixture comprises this glue material and this insulating heat-conduction material.
6. light-emitting diode assembly according to claim 5 is characterized in that, this glue material is epoxy resin, silicones or Merlon.
7. light-emitting diode assembly according to claim 6 is characterized in that, this ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.
8. light-emitting diode assembly according to claim 1 is characterized in that, more comprises one the 3rd colloid mixture, and it is poured in this pedestal and coats this substrate and this led chip.
9. light-emitting diode assembly according to claim 8 is characterized in that, the 3rd colloid mixture comprises this glue material and this insulating heat-conduction material.
10. light-emitting diode assembly according to claim 9 is characterized in that, this glue material is epoxy resin, silicones or Merlon.
11. light-emitting diode assembly according to claim 10 is characterized in that, this ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.
12. a light-emitting diode assembly comprises a pedestal, a substrate, a support, a led chip and one first colloid mixture, wherein this substrate is set up on this pedestal with this, and this led chip is connected on this substrate by the flip-chip packaged type; This first colloid mixture is located between this substrate and this led chip, it is characterized in that:
This first colloid mixture comprises a glue material and an insulating heat-conduction material, and wherein this insulating heat-conduction material comprises diamond dust, class diamond dust or ceramic powder.
13. light-emitting diode assembly according to claim 12 is characterized in that, this glue material is epoxy resin, silicones or Merlon.
14. light-emitting diode assembly according to claim 13 is characterized in that, this ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.
15. light-emitting diode assembly according to claim 12 is characterized in that, more comprises one second colloid mixture, it is poured in this pedestal and coats this substrate and this led chip.
16. light-emitting diode assembly according to claim 15 is characterized in that, this second colloid mixture comprises this glue material and this insulating heat-conduction material.
17. light-emitting diode assembly according to claim 16 is characterized in that, this glue material is epoxy resin, silicones or Merlon.
18. light-emitting diode assembly according to claim 17 is characterized in that, this ceramic powder is aluminium oxide, aluminium nitride, boron nitride or carborundum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101432407A CN101364626B (en) | 2007-08-07 | 2007-08-07 | LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101432407A CN101364626B (en) | 2007-08-07 | 2007-08-07 | LED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101364626A true CN101364626A (en) | 2009-02-11 |
| CN101364626B CN101364626B (en) | 2010-09-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101432407A Expired - Fee Related CN101364626B (en) | 2007-08-07 | 2007-08-07 | LED device |
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| CN (1) | CN101364626B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102141220A (en) * | 2010-01-29 | 2011-08-03 | 日东电工株式会社 | Backlight and liquid crystal display device |
| CN102332526A (en) * | 2010-07-14 | 2012-01-25 | 展晶科技(深圳)有限公司 | Flip-chip light-emitting diode (LED) packaging structure |
| CN103296185A (en) * | 2012-03-02 | 2013-09-11 | 河南森源电气股份有限公司 | Inverted trapezoidal LED support and LED light source thereof |
| CN103443941A (en) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | Semiconductor light-mitting device |
| CN103672653A (en) * | 2012-08-30 | 2014-03-26 | 现代摩比斯株式会社 | Lighting apparatus for vehicle and manufacturing method for the same |
| CN103672652A (en) * | 2012-08-30 | 2014-03-26 | 现代摩比斯株式会社 | Lighting device of automobile |
| CN103794602A (en) * | 2014-01-26 | 2014-05-14 | 哈尔滨鎏霞光电技术有限公司 | All-directional light-outlet efficient LED module device |
| CN103794702A (en) * | 2013-12-02 | 2014-05-14 | 深圳雷曼光电科技股份有限公司 | LED support |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN106159063A (en) * | 2016-08-26 | 2016-11-23 | 广东德力光电有限公司 | A kind of novel inverted chip light emitting device and preparation method thereof |
| CN107851700A (en) * | 2015-07-21 | 2018-03-27 | Lg伊诺特有限公司 | Integrated light-emitting encapsulates |
| CN108807171A (en) * | 2018-05-24 | 2018-11-13 | 烟台台芯电子科技有限公司 | A kind of diode low-temp ceramics packaging process |
| JP2019125682A (en) * | 2018-01-16 | 2019-07-25 | 日機装株式会社 | Semiconductor light-emitting element |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6514782B1 (en) * | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
| CN2696133Y (en) * | 2004-05-18 | 2005-04-27 | 葛世潮 | Power type light-emitting diod |
| CN100375300C (en) * | 2003-11-25 | 2008-03-12 | 葛世潮 | High power LED |
| CN2739803Y (en) * | 2003-12-12 | 2005-11-09 | 孙实庆 | LED light-emitting diode structure |
-
2007
- 2007-08-07 CN CN2007101432407A patent/CN101364626B/en not_active Expired - Fee Related
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102141220A (en) * | 2010-01-29 | 2011-08-03 | 日东电工株式会社 | Backlight and liquid crystal display device |
| CN102141220B (en) * | 2010-01-29 | 2015-03-11 | 日东电工株式会社 | Backlight and liquid crystal display device |
| CN102332526B (en) * | 2010-07-14 | 2015-01-07 | 展晶科技(深圳)有限公司 | Flip-chip light-emitting diode (LED) packaging structure |
| CN102332526A (en) * | 2010-07-14 | 2012-01-25 | 展晶科技(深圳)有限公司 | Flip-chip light-emitting diode (LED) packaging structure |
| CN103443941A (en) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | Semiconductor light-mitting device |
| CN103296185A (en) * | 2012-03-02 | 2013-09-11 | 河南森源电气股份有限公司 | Inverted trapezoidal LED support and LED light source thereof |
| CN103672653A (en) * | 2012-08-30 | 2014-03-26 | 现代摩比斯株式会社 | Lighting apparatus for vehicle and manufacturing method for the same |
| CN103672652A (en) * | 2012-08-30 | 2014-03-26 | 现代摩比斯株式会社 | Lighting device of automobile |
| CN103672653B (en) * | 2012-08-30 | 2016-06-08 | 现代摩比斯株式会社 | The means of illumination of automobile and manufacture method thereof |
| CN103794702B (en) * | 2013-12-02 | 2016-08-17 | 深圳雷曼光电科技股份有限公司 | LED support |
| CN103794702A (en) * | 2013-12-02 | 2014-05-14 | 深圳雷曼光电科技股份有限公司 | LED support |
| CN103794602A (en) * | 2014-01-26 | 2014-05-14 | 哈尔滨鎏霞光电技术有限公司 | All-directional light-outlet efficient LED module device |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN103943763B (en) * | 2014-03-28 | 2019-07-16 | 晶丰电子封装材料（武汉）有限公司 | A kind of encapsulating structure and method of flip LED chips |
| CN107851700A (en) * | 2015-07-21 | 2018-03-27 | Lg伊诺特有限公司 | Integrated light-emitting encapsulates |
| CN107851700B (en) * | 2015-07-21 | 2020-06-02 | Lg伊诺特有限公司 | Integrated light emitting package |
| CN106159063A (en) * | 2016-08-26 | 2016-11-23 | 广东德力光电有限公司 | A kind of novel inverted chip light emitting device and preparation method thereof |
| JP2019125682A (en) * | 2018-01-16 | 2019-07-25 | 日機装株式会社 | Semiconductor light-emitting element |
| CN108807171A (en) * | 2018-05-24 | 2018-11-13 | 烟台台芯电子科技有限公司 | A kind of diode low-temp ceramics packaging process |
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| Publication number | Publication date |
|---|---|
| CN101364626B (en) | 2010-09-29 |
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