CN105720167A - Packaging method of light emitting diode - Google Patents
Packaging method of light emitting diode Download PDFInfo
- Publication number
- CN105720167A CN105720167A CN201410733439.5A CN201410733439A CN105720167A CN 105720167 A CN105720167 A CN 105720167A CN 201410733439 A CN201410733439 A CN 201410733439A CN 105720167 A CN105720167 A CN 105720167A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- packing
- light emitting
- upper cover
- transparent upper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 239000000084 colloidal system Substances 0.000 claims abstract description 33
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 21
- 230000005496 eutectics Effects 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000012856 packing Methods 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 7
- 230000006978 adaptation Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a packaging method of a light emitting diode, which comprises the following steps: providing a light emitting diode chip fixed in a housing, wherein the housing comprises a transparent upper cover and a base; coating a packaging colloid on the transparent upper cover or the base, wherein the packaging colloid comprises an inorganic oxide; baking the packaging colloid; combining the transparent upper cover and the base to form a closed space; and heating to a preset temperature to enable the inorganic oxide to respectively perform eutectic reaction with the transparent upper cover and the base.
Description
Technical field
The present invention, about the method for packing of a kind of light emitting diode, utilizes inorganic oxide as the method for packing of encapsulating material especially with regard to a kind of.
Background technology
Semiconductor packages in order that prevent chip to be subject to the destruction of external environment, such as aqueous vapor, dust etc..In the past in the encapsulation of light emitting diode (LED) chip, it is frequently used organic packages glue and seals its transparent material such as glass or vinyl cover, light-emitting diode chip for backlight unit is protected in wherein.Conventional organic packages glue is such as epoxy resin (Epoxy) or silica gel.In encapsulating structure after utilizing organic packages glue to be packaged, owing to belonging to Organic substance at the material engaging place use, if long-term exposure is under daylight or is subject to irradiation and the heat effect of light emitting diode itself, it is very easy to produce material embrittlement or aging, the adaptation causing joint declines and the material (such as oxygen, dampness) in external environment is invaded, produce to destroy to LED internal structure, affect its service life.Additionally, for needing to tan by the sun light emitting diode in the sunlight for a long time or frequently, be also affected by very big restriction on using.
But, in the solaode of perovskite structure, the electric hole transport layer that the organic polymers such as the PEDOT:PSS generally arranged in pairs or groups are formed has the problem of stability of material, and especially when solaode is always when longtime running, this defect is especially desirable to be enhanced.
Therefore, it is necessary to the method for packing of a kind of light emitting diode is provided, it is possible to manufacture an adaptation good and be not easily heated or light impact encapsulating structure, to solve the problem existing for prior art.
Summary of the invention
Present invention is primarily targeted at the method for packing that a kind of light emitting diode is provided, it is configured to packing colloid with inorganic oxide, the upper bed-plate recycling described inorganic oxide and described light emitting diode carries out eutectic reaction, improve the impact being subject to long term thermal or light and the defect making contact point structure brittle or aging, and reach better adaptation and heat tolerance, the life-span of light emitting diode and the suitability of environment can be greatly improved.
For reaching the object defined above of the present invention, one embodiment of the invention provides the method for packing of a kind of light emitting diode, it is characterized in that: the step of described method for packing comprises: (1) provides a light-emitting diode chip for backlight unit, it is fixed in a shell, and described shell includes a transparent upper cover and a base；(2) being coated with a packing colloid in described transparent upper cover or base, described packing colloid comprises an inorganic oxide；(3) described packing colloid is toasted；(4) described transparent upper cover and described base are combined, to form a confined space；And (5) heat to a preset temperature, make described inorganic oxide respectively with described transparent upper cover and described base generation eutectic reaction.
In one embodiment of this invention, described base comprises a reflection groove, in order to carry described light-emitting diode chip for backlight unit.
In one embodiment of this invention, described reflection groove is a cup-like structure, has bottom one and a sidewall.
In one embodiment of this invention, the sidewall of described base is to be combined with described transparent upper cover by described packing colloid.
In one embodiment of this invention, described transparent upper cover is a lens arrangement.
In one embodiment of this invention, described step (2) is to be coated with described packing colloid with wire mark or some glue mode.
In one embodiment of this invention, described inorganic oxide is to comprise silicon oxide, boron oxide or its combination.
In one embodiment of this invention, described inorganic oxide is between 30 to 60% by weight.
In one embodiment of this invention, the baking temperature of described step (3) is between 250 to 450 DEG C.
In one embodiment of this invention, the described preset temperature of described step (5) is between 250 DEG C to 450 DEG C.
For the foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, it is described in detail below:
Accompanying drawing explanation
Fig. 1 is the process block diagram of the method for packing of the light emitting diode of present pre-ferred embodiments.
Fig. 2 is the sectional view of the packaging structure of the light emitting diode of present pre-ferred embodiments.
Detailed description of the invention
The explanation of following embodiment is specific embodiment that is graphic with reference to what add, that implement in order to illustrate the present invention may be used to.Furthermore, the direction term that the present invention is previously mentioned, such as upper and lower, top, the end, front, rear, left and right, inside and outside, side, surrounding, central authorities, level, transverse direction, vertically, longitudinally, axially, radially, the superiors or orlop etc., be only the direction with reference to annexed drawings.Therefore, the direction term of use is to illustrate and understand the present invention, and is not used to the restriction present invention.
First, refer to Fig. 1, presently preferred embodiments of the present invention provides the method for packing of a kind of light emitting diode, mainly includes step: (S1) provides a transparent upper cover and a base；(S2) packing colloid it is coated with；(S3) described packing colloid is toasted；(S4) described transparent upper cover and described base are combined；And (S5) heats to a preset temperature.The present invention is by the implementation detail of above steps and the principle thereof that hereafter describe preferred embodiment one by one in detail.
Refer to shown in Fig. 1 and 2, the method for packing of the light emitting diode of present pre-ferred embodiments first: (S1), transparent upper cover 21 and a base 22 is provided.In this step, described transparent upper cover 21 and described base 22 can form a shell 20, and described shell 20 is to seal and fix a light-emitting diode chip for backlight unit 10.Described transparent upper cover 21 can be a lens arrangement, the light focusing that can be sent by described light-emitting diode chip for backlight unit 10, increases brightness.Described base 22 preferably comprises a reflection groove 221, in order to reflect the light that described light-emitting diode chip for backlight unit 10 sends, can increase the utilization rate of light.Described reflection groove 221 has a 221a and sidewall 221b bottom, and described reflection groove 221 is preferably such as a cup-like structure.The bottom 221a of described reflection groove 221 can carry described light-emitting diode chip for backlight unit 10, additionally, the sidewall 221b of described reflection groove 221 is preferably above height when described light-emitting diode chip for backlight unit 10 is arranged at described bottom 221a.The material of described transparent upper cover 21 can be for example the transparent materials such as glass, transparent plastic, quartz, and the material of described base 22 can be for example epoxy resin, PCT plate, pottery or glass mat (FR4).Described reflection groove 221 can be chimeric with described base or integrally formed and formed.
Continuing referring to shown in Fig. 1 and 2, the method for packing of the light emitting diode of present pre-ferred embodiments is followed by: (S2), be coated with a packing colloid 30 in described transparent upper cover 21 or base 22.Described packing colloid 30 is the inorganic colloid for an inorganic oxide composition.Described inorganic oxide can be for example the inorganic mixture including silicon oxide, boron oxide or its combination, or eventually produces the inorganic mixture of silicon oxide, boron oxide or its combination, is so not limited to this.The composition of described packing colloid 30 can comprise described inorganic oxide and an additive.Described additive can such as solvent, being preferably and have volatile organic solvent, it is used for making described inorganic oxide be dissolved in wherein, in order to the coating of this step uses, the purposes of right described additive is not limited to this, can be adjusted according to packing colloid demand time actually used.Described inorganic oxide is between 30 to 60% percentage by weights relative to described packing colloid 30 by weight, can be for example 30,45 or 55%, is so not limited to this.Additionally, the coating method of described packing colloid 30 preferably can such as use the mode such as wire mark or some glue to carry out, so it is not limited to this.The position of described packing colloid 30 coating is also not intended to, but it is preferred that coated on described base 22 upper surface by described packing colloid 30, is positioned at the adjacent domain of described reflection groove 221, namely the surface above described sidewall 221b.It addition, described packing colloid 30 also can coat the root edge of described transparent upper cover 21.
The method for packing of the light emitting diode of present pre-ferred embodiments is followed by: (S3), toast described packing colloid.In this step, owing to described packing colloid 30 has been coated with to described transparent upper cover 21 or described base 22, therefore can pass through to be placed in a baking oven by described transparent upper cover 21 or described base 22 and heat, until solvent contained in described packing colloid 30 or additive being removed.It is said that in general, required baking time and temperature are depending on solvent species, it is preferred that between 120 DEG C to 300 DEG C, can be for example 120 DEG C, 180 DEG C or 220 DEG C, be so not limited to this.
The method for packing of the light emitting diode of present pre-ferred embodiments is followed by: (S4), combine described transparent upper cover 21 and described base 22.Preferably, the described sidewall 221b of described base 22 is combined with the para-position of described transparent upper cover 21 by described packing colloid 30.
Furthermore, the method for packing of the light emitting diode of present pre-ferred embodiments is followed by: (S5), heating are to a preset temperature.In this step, described preset temperature is between 250 DEG C to 450 DEG C, can be for example 275 DEG C, 300 DEG C, 380 DEG C or 430 DEG C, is so not limited to this.Furthermore, this step can also be heated under the atmosphere of a noble gas, is so not limited to this, can also carry out in atmosphere.This step mainly makes the described inorganic oxide of described packing colloid 30 with described transparent upper cover 21 and described base 22, eutectic reaction occur respectively.Due to the formation of eutectic structure, described transparent upper cover 21 connects compared to conventional used organic gel is more tight and adaptation is good with described base 22.Compared to the temperature of baking, described preset temperature is when practical operation, it is preferred that be greater than the temperature of described baking, for instance when the temperature of baking is 150 DEG C, described preset temperature is then 230 DEG C.
Compared to prior art, method for packing according to light emitting diode provided by the present invention, suitable packing colloid is modulated by inorganic oxide, the base (or transparent upper cover) recycling described inorganic oxide and described shell carries out eutectic reaction, improve the impact being subject to long term thermal or light and the defect making contact point structure brittle or aging, and reach the toleration of better adaptation and heat, the life-span of light emitting diode and the suitability of environment can be greatly improved.
The present invention is been described by by above-mentioned related embodiment, but above-described embodiment is only the example implementing the present invention.It must be noted that, it has been disclosed that embodiment be not limiting as the scope of the present invention.On the contrary, be contained in the amendment of the spirit and scope of claims and equalization arranges and is all included in the scope of the present invention.
Claims (10)
1. the method for packing of a light emitting diode, it is characterised in that: described method for packing comprises step:
(1) providing a light-emitting diode chip for backlight unit, it is fixed in a shell, and described shell includes a transparent upper cover and a base；
(2) being coated with a packing colloid in described transparent upper cover or base, described packing colloid comprises an inorganic oxide；
(3) described packing colloid is toasted；
(4) described transparent upper cover and described base are combined, to form a confined space；And
(5) heating to a preset temperature, make described inorganic oxide respectively with described transparent upper cover and described base generation eutectic reaction.
2. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: described base comprises a reflection groove, in order to carry described light-emitting diode chip for backlight unit.
3. the method for packing of light emitting diode as claimed in claim 2, it is characterised in that: described reflection groove is a cup-like structure, has bottom one and a sidewall.
4. the method for packing of light emitting diode as claimed in claim 3, it is characterised in that: the described sidewall of described base is to be combined with described transparent upper cover by described packing colloid.
5. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: described transparent upper cover is a lens arrangement.
6. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: described step (2) is to be coated with described packing colloid with wire mark or some glue mode.
7. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: described inorganic oxide is to comprise silicon oxide, boron oxide or its combination.
8. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: described inorganic oxide relative to described packing colloid is between 30 to 60% by weight.
9. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: the baking temperature of described step (3) is between 120 DEG C to 300 DEG C.
10. the method for packing of light emitting diode as claimed in claim 1, it is characterised in that: the described preset temperature of described step (5) is between 250 DEG C to 450 DEG C.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103127336A TW201607080A (en) | 2014-08-08 | 2014-08-08 | Method of encapsulating light emitting diodes |
| TW103127336 | 2014-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105720167A true CN105720167A (en) | 2016-06-29 |
Family
ID=55810166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410733439.5A Pending CN105720167A (en) | 2014-08-08 | 2014-12-04 | Packaging method of light emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105720167A (en) |
| TW (1) | TW201607080A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3230765B2 (en) * | 1992-08-17 | 2001-11-19 | 株式会社トクヤマ | Epoxy resin composition |
| CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103280508A (en) * | 2013-05-24 | 2013-09-04 | 江阴长电先进封装有限公司 | Wafer-level LED (Light Emitting Diode) packaging method |
-
2014
- 2014-08-08 TW TW103127336A patent/TW201607080A/en unknown
- 2014-12-04 CN CN201410733439.5A patent/CN105720167A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3230765B2 (en) * | 1992-08-17 | 2001-11-19 | 株式会社トクヤマ | Epoxy resin composition |
| CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103280508A (en) * | 2013-05-24 | 2013-09-04 | 江阴长电先进封装有限公司 | Wafer-level LED (Light Emitting Diode) packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201607080A (en) | 2016-02-16 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Application publication date: 20160629 |