CN107785471A - The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic - Google Patents
The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic Download PDFInfo
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- CN107785471A CN107785471A CN201710738391.0A CN201710738391A CN107785471A CN 107785471 A CN107785471 A CN 107785471A CN 201710738391 A CN201710738391 A CN 201710738391A CN 107785471 A CN107785471 A CN 107785471A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000012856 packing Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 130
- 239000002184 metal Substances 0.000 claims abstract description 130
- 238000005245 sintering Methods 0.000 claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 150000002739 metals Chemical class 0.000 claims abstract description 27
- 238000005538 encapsulation Methods 0.000 claims abstract description 21
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910017083 AlN Inorganic materials 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001097 yellow gold Inorganic materials 0.000 claims description 3
- 239000010930 yellow gold Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000005022 packaging material Substances 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000295 fuel oil Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010068052 Mosaicism Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 210000003765 sex chromosome Anatomy 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- -1 titanium nitrides Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic, belong to LED encapsulation fields.Method for packing includes：Metal level is set on ceramic post sintering structure base board, obtains ceramet liner plate precursor, metal level includes circuit connecting section and the encapsulation connecting portion around circuit connecting section；Solder layer is set on encapsulation connecting portion, and package metals frame invested and carries out sealing-in after solder layer and obtains UVLED base of ceramic.UVLED base of ceramic encapsulating structures are formed using foregoing method for packing encapsulation.The present invention can realize the inorganic encapsulated to UVLED base of ceramic, avoid using organic packaging materials, extend on the basis of the service life of LED component, low temperature preparation goes out the good UVLED base of ceramic of electric conductivity and thermal conductivity, and solve the problems, such as metal level and ceramics and framework adhesion difference simultaneously, so as to improve the stability of UVLED base of ceramic and reliability.
Description
Technical field
The present invention relates to LED encapsulation fields, in particular to a kind of method for packing and UVLED of UVLED base of ceramic
Base of ceramic encapsulating structure.
Background technology
With the fast development of LED technology and reaching its maturity for visible regime, the pole of UV-light luminous two of short wavelength
Pipe (UV LED) is gradually of interest by numerous researchers, purple compared to traditional because its spectral band is concentrated in ultraviolet range
Outer light source, possesses unique advantage, including it is low in energy consumption, luminescence response is fast, reliability is high, radiation efficiency is high, long lifespan, right
Environmental nonpollution, it is compact-sized many advantages, such as, therefore it has wide market application foreground, solid in silk-screen printing, polymer
There is major application value in the fields such as change, environmental protection, white-light illuminating and military detection.
LED main flow packaged type is to use organic packages at present, and predominant package material is mostly epoxy resin and silicon tree
The organic materials such as fat.If for ultraviolet LED, because ultraviolet wavelength is shorter, emittance is high, and these organic materials are by it
Easily there is aging in irradiation for a long time, so as to reduce the luminous efficiency of LED chip, influences its performance and life-span.It is at present
UVLED life-span and performance is improved, is at present mainly improved by following two modes in the industry:First, from light and heat
Delay organic material aging speed etc. many-side, the side such as light stabilizer, antioxidant and heat stabilizer is added in organic packaging materials
Face is improved, but the method does not solve root problem thoroughly, the risk that LED failure still be present.2nd, using inorganic
Material is packaged, and existing UVLED base of ceramic is mainly realized by common burning technology namely HTCC or LTCC, both approaches
Although being avoided that the use of organic material and air-tightness being preferable, caused shortcoming in some techniques each still be present.
For HTCC technologies：Namely the organic principles such as plasticizer, dispersant, binding agent are added in ceramic powder, it is made into mud
Shape slurry, green compact are made with the tape casting；Then via hole is bored in the design according to each layer, and cloth is carried out using screen-printed metal slurry
Line and filling perforation, finally the stacking of each raw embryo is added, is finally sintered under 1500~1700 DEG C of high temperature and forms base of ceramic.
For LTCC technology：It is similar with HTCC, 30%-50% low-melting glass material are simply mixed into ceramic powder, make burning
Junction temperature is reduced to 850-900 DEG C, therefore can use the metals such as the more preferable copper silver of conductance as electrode and wiring material.
The content of the invention
It is an object of the invention to provide a kind of method for packing of UVLED base of ceramic, is realizing to UVLED base of ceramic
Inorganic encapsulated on the basis of, low temperature preparation goes out the good UVLED base of ceramic of electric conductivity and thermal conductivity, and solves metal level
The problem of with ceramics and framework adhesion difference.
Another object of the present invention is to provide a kind of UVLED base of ceramic encapsulating structure, it can improve UV LED potteries
The stability and reliability of porcelain pedestal.
What embodiments of the invention were realized in：
A kind of method for packing of UVLED base of ceramic, it includes：
Metal level is set on ceramic post sintering structure base board, obtains ceramet liner plate precursor, metal level connects including circuit
Portion and the encapsulation connecting portion around circuit connecting section；
Solder layer is set on encapsulation connecting portion；And
Sealing-in is carried out after package metals frame is invested into solder layer.
A kind of UVLED base of ceramic encapsulating structure, it is formed using above-mentioned method for packing encapsulation.
The beneficial effect of the embodiment of the present invention is：
1st, the present invention from the silver or yellow gold that main component is low melting point and excellent electric conductivity as circuit pulp layer,
And substrate Ceramics sinter structure base board, sintering temperature is reduced without adding excessive low-melting glass material, thermal conductivity improves.
Therefore present invention preparation UVLED base of ceramic has thermal conductivity, electric conductivity good and the advantages such as sintering temperature is low.
2nd, the present invention by from match with metal level thermal coefficient of expansion and the preferable framework of ductility is such as silver-colored, copper with
Ceramet liner plate carries out sealing-in, and base of ceramic residual stress is smaller after sealing-in, and package metals frame passes through during sealing-in
The eutectic liquid phase formed with solder layer, it can preferably be combined with ceramet liner plate, and form the overall knot of densification
Structure.Thus it is good to prepare UVLED base of ceramic air-tightness, and metal level and framework and ceramic post sintering structure base board adhesion compared with
It is good, so as to improve the stability of UVLED base of ceramic and reliability.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly,
The required accompanying drawing used in embodiment will be briefly described below, it will be appreciated that the following drawings is only shown
Certain embodiments of the present invention, therefore it is not construed as the restriction to scope, for those of ordinary skill in the art,
On the premise of not paying creative work, other related accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the process chart of the method for packing of the UVLED base of ceramic of the present invention；
Fig. 2 is the structural representation of the UVLED base of ceramic encapsulating structures of the present invention；
Fig. 3 is the partial enlarged drawing of the ceramet liner plate of the UVLED base of ceramic encapsulating structures of the present invention；
Fig. 4 is structural representation of the UVLED base of ceramic encapsulating structure of the present invention after LED chip is set；
Fig. 5 is the UVLED base of ceramic air tightness test pictures that in the present invention prepared by embodiment 1；
Fig. 6 prepares picture after UVLED base of ceramic adhesion is tested for embodiment 1 in the present invention, wherein figure a is metal level
Picture after being tested with joint efforts with ceramic junction, figure b are picture after metal level is tested with framework adhesion.
Icon：100-UVLED base of ceramic encapsulating structures；110- ceramic post sintering structure base boards；120- metal levels；121- electricity
Road connecting portion；122- encapsulates connecting portion；123- the first metal layers；124- second metal layers；130- solder layers；140- encapsulation gold
Belong to frame；150- ceramet liner plates；200-LED chips；210- conductor wires.
It should be noted that the metal level 120 of the present invention transversely divides on ceramic post sintering structure base board 110, metal level
120 include circuit connecting section 121 and encapsulation connecting portion 122；Along longitudinally divided, metal level 120 includes the first metal layer 123 and the
Two metal levels 124.Accordingly it is also possible to understand：Circuit connecting section 121 and encapsulation connecting portion 122 include the first metal layer 123
With second metal layer 124.
Embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the present invention.It is unreceipted specific in embodiment
Condition person, the condition suggested according to normal condition or manufacturer are carried out.Agents useful for same or the unreceipted production firm person of instrument, it is
The conventional products that can be obtained by commercially available purchase.
Existing UVLED base of ceramic manufacture craft is predominantly total to burning technology namely HTCC or LTCC.Inventor is studying
The problem of certain be present in middle discovery, process above.
For example, HTCC technologies have sintering temperature height, energy consumption is huge, and metallic conductor selection is limited and poorly conductive etc.
Shortcoming, conductor material is mainly metal and its alloys such as the higher tungsten of fusing point, molybdenum, manganese at present.
In LTCC technology, because the UVLED base of ceramic thermal conductivities of preparation are relatively low, and there is matching in the material burnt altogether
Sex chromosome mosaicism, cause yielding cracking after its sintering so that metal level and ceramic junction are relatively poor with joint efforts (＜ 50N), thus also lead
Reliability is relatively low during cause UVLED base of ceramic applications.
The defects of according to prior art, the present invention propose a kind of technique for making UVLED base of ceramic encapsulating structures.
A kind of process chart of the method for packing of UVLED base of ceramic encapsulating structure 100 of the present invention as shown in Fig. 1,
Comprise the following steps：
Step 1：Metal level 120 is set
Metal level 120 is set on ceramic post sintering structure base board 110, obtains the precursor of ceramet liner plate 150.Ceramics burn
Knot body substrate can be aluminium nitride ceramics, aluminium oxide ceramics or silicon nitride ceramics, be preferably provided with：Aluminium nitride ceramics is as ceramic post sintering
Structure base board, the shape and thickness of ceramic post sintering structure base board are unrestricted, as long as can be used in preparing metallized ceramic substrate i.e.
Can.Metal level 120 includes circuit connecting section 121 and the encapsulation connecting portion 122 around circuit connecting section 121.It is it is preferred that logical
Cross mode of printing and metal level 120 is set.Wherein, printing can one or more times, such as twice, three times, four times and more times
Carry out.
In some instances, printing sets metal level 120 to carry out at twice, and typography can pass through herein below
And it is defined.
First, the first printing is carried out on ceramic post sintering structure base board 110, the metal paste of printing is the first metal pulp
Material.
First metal paste includes the first conductive compositions.First conductive compositions include Ag and Cu and active component, for
Conductive layer is formed on ceramic post sintering structure base board 110.Active component includes at least one of Ti, Zr and Hf.For example, active component
For Ti, either active component is Zr or active component is Hf, and either active component is Ti and Hf mixture or activity
Composition is Ti and Zr mixture, and the mixture or active component that either active component is Zr and Hf are the mixed of Ti, Zr and Hf
Compound.
The ceramic post sintering structure base board 110 that the present invention uses is aluminium nitride ceramics, active element Ti, Zr in active component or
Hf forms binder course, such as aluminium nitride and Ti reaction generation titanium nitrides with nitridation reactive aluminum so that metal level 120 burns with ceramics
Knot body substrate 110 can combine closely.Meanwhile if using Alumina Ceramics Sintering structure base board, titanium and oxidation reactive aluminum life
Into titanium oxide；Similar embodiment can also be：Structure base board is sintered using silicon nitride ceramics, then titanium and nitridation pasc reaction generation
Titanium nitride and titanium silicide.
By mass percentage, Ag, Cu account for the 95%-98% of the first conductive compositions total amount, and it is conductive that active component accounts for first
The 2%-5% of composition total amount.The first metal paste formed according to the proportioning and the first gold medal formed by the first metal paste
Belong to layer 123, directly binder course can be formed with the reaction of ceramic post sintering structure base board 110 under the active component high temperature in the metal level,
So as to ensure that metal level is combined with ceramic sintered bodies substrates into intimate.First metal paste except above-mentioned first conductive compositions and activity into
Beyond point, in addition to other organic principles such as organic binder bond and organic solvent.
Then, the second printing is carried out on the first metal paste, the metal paste of printing is the second metal paste.
The viscosity of second metal paste is less than the viscosity of the first metal paste so that the second metal paste is in ceramic sintered bodies
Mobility on substrate 110 is more than mobility of first metal paste on ceramic post sintering structure base board 110, so as to make up the first gold medal
The small rut that category slurry is formed on ceramic post sintering structure base board 110 so that the surface of whole metal level 120 is more smooth.
Second metal paste includes the second conductive compositions.Second conductive compositions include Ag and Cu.The silver-bearing copper mass ratio of second conductive compositions
More than the silver-bearing copper mass ratio of the first conductive compositions.That is to say, in the second conductive compositions by mass percentage silver shared by proportion
Relative to big in the first conductive compositions.Second metal paste in addition to above-mentioned second conductive compositions, in addition to organic binder bond and
Other organic principles such as organic solvent.
Therefore, the metal level 120 set according to the method described above substantially includes two layers after vacuum-sintering, i.e., by the first metal
The first metal layer 123 of slurry formation and the second metal layer 124 formed by the second metal paste.As shown in figure 3, by first
The first metal layer 123 is arranged at the surface of ceramic post sintering structure base board 110 made of metal paste.Made of the second metal paste
Second metal layer 124 is arranged at the surface of the first metal layer 123.
Step 2：Solder layer 130 and package metals frame 140 are set
Solder layer 130 is set on the encapsulation connecting portion 122 of metal level 120.Solder layer 130 is also by the way of printing
Set.Solder layer 130 is made of silver-bearing copper slurry.Solder layer 130 includes 72~77% Ag and 23 by mass percentage
~28% Cu.
Package metals frame 140 is invested into solder layer 130.The material of package metals frame 140 can be silver or copper, preferentially set
Metal frame is Cu, especially oxygen-free copper.It can carry out sealing-in matching with the precursor of ceramet liner plate 150 well.To
Package metals frame 140 is invested and package metals frame 140 pre-processed before solder layer 130, pretreatment successively include oil removing and
Deoxidation step, to remove the oxide of the greasy dirt on the surface of package metals frame 140 and surface.
Step 3：The precursor vacuum seal of package metals frame 140 and ceramet liner plate 150
After above-mentioned steps completion, by the precursor of ceramet liner plate 150 and package metals frame 140 together in vacuum
Under the conditions of sealing-in.Sealing temperature is 780 DEG C -950 DEG C, sealing time 10min-60min.Vacuum condition is that vacuum is higher than 5
×10-2Pa, it that is to say that pressure is less than 5 × 10-2Pa。
During sealing-in, solder layer 130 can form eutectic liquid phase with package metals frame 140 so that package metals frame
140 are obtained well by the precursor of the solder layer 130 and ceramet liner plate 150 that are arranged on the precursor of ceramet liner plate 150
Contact, and form dense monolithic structure, and then the UVLED base of ceramic encapsulating structure 100 for prepare has air-tightness
The advantages that adhesion is excellent to each other in excellent and its each portion.
The UVLED base of ceramic encapsulating structure 100 prepared according to above-mentioned method for packing is as shown in Fig. 2 UVLED is ceramic
Pedestal encapsulating structure 100 includes ceramet liner plate 150, solder layer 130 and package metals frame 140.Wherein, ceramet serves as a contrast
Plate 150 includes ceramic post sintering structure base board 110 and metal level 120.Metal level 120 is arranged on ceramic sintered bodies by the way of printing
The both side surface of substrate 110.Solder layer 130 is arranged on the encapsulation connecting portion 122 of metal level 120.Package metals frame 140 is set
On solder layer 130, the frame structure for packaging LED chips 200 is formed.
Fig. 3 is refer to, along longitudinally divided, metal level 120 includes the first metal layer formed by above-mentioned first metal paste
123 and the second metal layer 124 that is formed by the second metal paste.The first metal layer 123 is arranged on ceramic post sintering structure base board 110
Both side surface, second metal layer 124 is arranged on the surface of the first metal layer 123.
Fig. 4 is refer to, LED chip 200 is arranged in the circuit connecting section 121 of metal level 120, and LED chip 200
It is connected by conductor wire 210 with the circuit connecting section 121 of metal level 120.LED chip 200 is ultraviolet leds chip.
It should be noted that the metal level 120 of the present invention is not provided on ceramic post sintering structure base board continuous layer knot
Structure, but circuit pattern is showed according to required circuitous pattern, therefore, the circuit connecting section 121 of metal level 120 and encapsulation connect
Portion 122 can continuously, can be discontinuous, the present invention is not limited in this respect.The circuit connecting section 121 of metal level 120 refers mainly to metal level
120 part for being used to set LED chip 200 and conductor wire 210.The encapsulation connecting portion 122 of metal level 120 refers mainly to gold
The part for being used to set solder layer 130 and package metals frame 140 of category layer 120.
It is good by the UVLED base of ceramic air-tightness of above-mentioned method for packing, at the same have low sintering temperature, electric conductivity and
The advantages that thermal conductivity is preferably, metal level and framework and ceramic post sintering structure base board adhesion are preferable, it is follow-up so as to improve its
Using when stability and reliability.
With reference to embodiment, the present invention is further described.
Embodiment 1
The aluminium nitride ceramics sintering structure base board 110 for choosing 114.3mm × 114.3mm is carried out at ultrasonic wave cleaning to its surface
It is stand-by after reason.The first metal paste is printed on the surface of ceramic post sintering structure base board 110 by the first printing, forms the first gold medal
Belong to layer 123.Second metal paste is printed on by the first metal layer 123 formed by the first metal paste by the second printing
On, form second metal layer 124.By the first printing and the second printing, metal is set on ceramic post sintering structure base board 110
Layer 120, so as to obtain the precursor of ceramet liner plate 150.
Solder layer 130 is set on the encapsulation connecting portion 122 of metal level 120.The setting of solder layer 130 is also using printing
Mode, wherein, solder layer 130 by mass percentage including 72% Ag and 28% Cu.
In the present embodiment, package metals frame 140 is made of oxygen-free copper.Package metals frame 140 is pre-processed.
Specifically, pretreatment successively includes oil removing and deoxidation is handled, namely package metals frame 140 is carried out first with heavy oil cleaning agent
Oil removal treatment.Secondly, under room temperature (20 DEG C -30 DEG C), the sulfuric acid solution that use quality fraction is 10wt% soaks 3min progress
Deoxidation is handled, and is removed the oxide of copper foil surface, is then dried up, removes the impurity of copper foil surface.Then will after pretreatment
Material invests solder layer 130 for the package metals frame 140 of oxygen-free copper.
Finally, the precursor of ceramet liner plate 150 and package metals frame 140 are subjected to sealing-in under vacuum.Sealing-in
Temperature is 850 DEG C, sealing time 30min, and vacuum is 1 × 10-3Pa。
Thus, the UVLED aluminium nitride ceramics pedestal encapsulating structures of the present invention are just made, and then dependence test is carried out to it,
Test result is shown in Table 1.
Embodiment 2
Except package metals frame is Ag frames, polished in pretreatment process toward heavy oil cleaning agent addition 3-5g high mesh numbers aluminum oxide
Powder, while realize outside oil removing and deoxidation processing, other are in the same manner as in Example 1.Thus, the UVLED nitrogen of the present invention is just made
Change aluminium base of ceramic encapsulating structure, and then dependence test is carried out to it, test result is shown in Table 1.
Embodiment 3
In addition to ceramic sintered bodies substrate material is aluminum oxide, other are in the same manner as in Example 1.
Thus, the UVLED base of ceramic encapsulating structures of the present invention are just made, and then dependence test is carried out to it, test knot
Fruit is shown in Table 1.
Comparative example 1
Except package metals frame is iron-nickel alloy frame, pretreatment process only includes outside deoiling step, other and embodiment 1 one
Sample.
Thus, UVLED aluminium nitride ceramics pedestals are just made, and then dependence test is carried out to it, test result is shown in Table 1.
Comparative example 2
The UVLED aluminium oxide ceramics pedestals prepared from commercially available low temperature co-firing technology (LTCC), and then phase is carried out to it
Test is closed, test result is shown in Table 1.
Comparative example 3
The UVLED aluminium oxide ceramics pedestals prepared from commercially available high temperature co-firing technology (HTCC), and then phase is carried out to it
Test is closed, test result is shown in Table 1.
UVLED base of ceramic is evaluated：
1) air-tightness is evaluated：
Drip red ink under normal temperature in package frame in UVLED base of ceramic, red ink and inframe wall should be ensured during titration
Surrounding contacts, and also to forbid it to be overflowed from frame upper surface；2h is stood after drop red ink, observes its infiltration situation.
2) adhesion is evaluated
A. metal level and ceramic post sintering structure base board
T pins and metal level square (2*2mm) are welded together using solder plate (Φ 2mm), then using electronic universal
Tensile testing machine (Vincellar XDL-500N) pulls T pins from ceramic aurification substrate, obtained value of thrust (N), and observes its point
From phenomenon, sample test quantity is 20pcs.If metal level separates with ceramics, adhesion NG is then evaluated as "×"；If metal level with
Ceramic hybrid separation, then adhesion OK, then be evaluated as "○".Then each released state quantity is counted as evaluation result.
B. metal level and framework
Framework utilizes its individually separated state with ceramic post sintering structure base board of stereomicroscope observation, sample test after peeling off
Quantity is 100pcs.Adhesion is poor between metal level and framework if framework separates with metal level on ceramic post sintering structure base board, evaluation
For "×"；If framework and ceramic post sintering structure base board are in hybrid separation, namely substrate surface ceramics are stripped, between metal level and framework
Adhesion is excellent, then is evaluated as "○".If both the above released state is present, adhesion is general, is evaluated as " △ ", then
Each released state quantity is counted as evaluation result.
3) cold-resistant thermal shock resistance properties evaluation
Using model TSG-71S-A type thermal shock test chambers, UVLED base of ceramic samples are raised to 125 from -40 DEG C
DEG C, used time 6min, -40 DEG C, used time 4min are then dropped to from 125 DEG C, then sample is raised to 125 DEG C, used time 6min from -40 DEG C,
So circulation, visually whether observation sample is cracked or peels off for every 50 circulations.
The test result of table 1.
As seen from the above table, red ink is complete without infiltration, namely air-tightness after the base of ceramic 2h that in the present invention prepared by embodiment
Portion OK, is specifically shown in Fig. 5.And after base of ceramic 2h prepared by comparative example 1 there is phenomenon of osmosis in red ink.This is primarily due to its frame
Body is kovar alloy, and it is relatively poor with metal level matched coefficients of thermal expansion and ductility, is also easy to produce in sintering larger
Residual stress, it is not good enough so as to cause it to be combined with ceramet liner plate, it have impact on UVLED base of ceramic air-tightness and reliability.
Power test is combined to each group base of ceramic, after metal level and ceramic substrate and framework are peeled off, except comparing
Example 1, other each group released states are all hybrid separation.It can in addition contain find out the ceramic base of the relatively preparation of example 2,3
Seat, the embodiment of the present invention prepares the metal level of base of ceramic and ceramic substrate stripping post-tensioning force value is larger, and its value is much larger than
100N, illustrate that metal level of the present invention and ceramic substrate and framework adhesion are excellent, be specifically shown in Fig. 6.
Heat shock resistance test is carried out to each group base of ceramic, as a result shows base of ceramic heat shock resistance prepared by each embodiment
Property it is preferable, be all higher than 2000 times, and other comparative examples prepare base of ceramic be respectively less than 800 times.Illustrate that the present invention prepares
UVLED base of ceramic reliabilities are higher.
The present invention is tungsten slurry of the yellow gold as circuit pulp layer, the relatively selection of example 3 from main component in addition
Material, it has lower fusing point and higher electric conductivity.Secondly in the base of ceramic preparation technology of comparative example 2, green sheet and gold
The sintering of category slurry is carried out simultaneously, in order to reduce the sintering temperature of green compact, generally requires the excessive low melting point glass in green compact
Glass material, this can substantially reduce the thermal conductivity of base of ceramic.And the substrate selected in the present invention is ceramic post sintering structure base board, Ye Jisheng
The sintering of blank and metal paste is gradually to carry out, without higher toward addition low-melting glass material, its thermal conductivity in green compact.Therefore
It can draw, UVLED base of ceramic of the present invention has higher electric conductivity and thermal conductivity simultaneously, and sintering temperature is low etc. excellent
Point.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
1. a kind of method for packing of UVLED base of ceramic, it is characterised in that it includes：
Metal level is set on ceramic post sintering structure base board, obtains ceramet liner plate precursor, the metal level connects including circuit
Portion and the encapsulation connecting portion around the circuit connecting section；
Solder layer is set on the encapsulation connecting portion；And
Sealing-in is carried out after package metals frame is invested into the solder layer.
2. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that the ceramic sintered bodies base
Plate is aluminium nitride ceramics, aluminium oxide ceramics or silicon nitride ceramics.
3. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that using printing by the way of
The metal level is set on the ceramic post sintering structure base board.
4. the method for packing of UVLED base of ceramic according to claim 3, it is characterised in that in the ceramic sintered bodies
The metal level is printed on substrate includes the first printing and the second printing.
5. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that using printing by the way of
The solder layer is set on the encapsulation connecting portion.
6. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that the metal level and solder
The composition of layer includes silver or yellow gold.
7. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that the package metals frame
Material is silver or copper.
8. the method for packing of UVLED base of ceramic according to any one of claim 1 to 7, it is characterised in that the weldering
The bed of material includes 72~77% Ag and 23~28% Cu by mass percentage.
9. the method for packing of UVLED base of ceramic according to claim 1, it is characterised in that be arranged on the solder layer
On package metals frame and ceramet liner plate precursor between sealing-in carry out under vacuum, and sealing temperature is
780 DEG C -950 DEG C, sealing time 10min-60min.
10. a kind of UVLED base of ceramic encapsulating structure, it is characterised in that the UVLED base of ceramic encapsulating structure is using such as
What the method for packing encapsulation any one of claim 1 to 9 formed.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922870A (en) * | 2018-08-22 | 2018-11-30 | 中国电子科技集团公司第四十三研究所 | A kind of aluminium nitride ceramics shell and preparation method thereof |
| CN111792943A (en) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for box dam on aluminum nitride ceramic substrate |
| CN111925228A (en) * | 2020-05-15 | 2020-11-13 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for box dam on alumina ceramic substrate |
| CN112552055A (en) * | 2021-01-14 | 2021-03-26 | 威海圆环先进陶瓷股份有限公司 | Method for high-temperature co-firing of metal and silicon nitride ceramic composite substrate |
| CN113571425A (en) * | 2021-07-09 | 2021-10-29 | 江苏富乐德半导体科技有限公司 | Preparation method of 3D structure ceramic substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307606Y (en) * | 2008-12-10 | 2009-09-09 | 潮州三环（集团）股份有限公司 | Novel ceramic package base |
| CN104496513A (en) * | 2014-11-13 | 2015-04-08 | 孝感市汉达电子元件有限责任公司 | Sealing process for ceramic discharge tube |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
| CN105845814A (en) * | 2016-05-04 | 2016-08-10 | 华中科技大学 | Ultraviolet LED packaging structure and manufacturing method thereof |
-
2017
- 2017-08-24 CN CN201710738391.0A patent/CN107785471A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307606Y (en) * | 2008-12-10 | 2009-09-09 | 潮州三环（集团）股份有限公司 | Novel ceramic package base |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
| CN104496513A (en) * | 2014-11-13 | 2015-04-08 | 孝感市汉达电子元件有限责任公司 | Sealing process for ceramic discharge tube |
| CN105845814A (en) * | 2016-05-04 | 2016-08-10 | 华中科技大学 | Ultraviolet LED packaging structure and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 上海市仪表电讯工业局: "《仪器仪表产品样本（第6册）》", 1976 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922870A (en) * | 2018-08-22 | 2018-11-30 | 中国电子科技集团公司第四十三研究所 | A kind of aluminium nitride ceramics shell and preparation method thereof |
| CN111792943A (en) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for box dam on aluminum nitride ceramic substrate |
| CN111925228A (en) * | 2020-05-15 | 2020-11-13 | 山西华微紫外半导体科技有限公司 | Eutectic welding method for box dam on alumina ceramic substrate |
| CN112552055A (en) * | 2021-01-14 | 2021-03-26 | 威海圆环先进陶瓷股份有限公司 | Method for high-temperature co-firing of metal and silicon nitride ceramic composite substrate |
| CN113571425A (en) * | 2021-07-09 | 2021-10-29 | 江苏富乐德半导体科技有限公司 | Preparation method of 3D structure ceramic substrate |
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