CN105491795A - Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method - Google Patents
Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method Download PDFInfo
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- CN105491795A CN105491795A CN201410477530.5A CN201410477530A CN105491795A CN 105491795 A CN105491795 A CN 105491795A CN 201410477530 A CN201410477530 A CN 201410477530A CN 105491795 A CN105491795 A CN 105491795A
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Abstract
The invention relates to a method for manufacturing a ceramic metallic substrate, and the ceramic metallic substrate manufactured by the method. The method includes the following steps: (1) performing laser drilling on a ceramic substrate to form upper through holes and lower through holes in the ceramic substrate; (2) performing through hole printing and pattern printing on the ceramic substrate with the upper through holes and the lower through holes, obtained from the step (1), to form circuit patterns having a certain thickness on the ceramic substrate, wherein the pattern printing includes pattern design and manufacture of a silk screen plate for pattern printing, and a process of pattern design includes that: various independent patterns are connected in series through two straight lines, so that the circuit patterns which are in mutual electrical insulation can form a whole plate which are electrically conductive; (3) performing high temperature sintering on the electrically conductive ceramic substrate obtained from the step (2); and (4) performing copper plating on the sintered ceramic substrate obtained from the step (3). The method can manufacture the ceramic substrate having a copper thickness of 30-100 [mu]m, and the production cost is greatly reduced in comparison with that of a thick film method and a thin film method.
Description
Technical field
The present invention relates to a kind of method increasing ceramic substrate copper layer thickness, and the metallized ceramic base plate manufactured by the method.
Background technology
Nowadays, electric current and the voltage of power module assembly just constantly increase, and in order to meet its resistance to big current, withstand large voltage and high demand of dispelling the heat, usual way increases ceramic substrate copper layer thickness.
Ceramic substrate method for metallising mainly contains two kinds of methods, is respectively membrane process and thick film.
Membrane process mainly comprises: first ceramic substrate is done pretreatment cleaning, utilize film specialized fabrication technology-vacuum coating mode sputter skim copper metal composite layer on ceramic substrate, then with the coating exposure of the photoresistance of yellow light lithography, development, etching, complete metal line after striping processing procedure to make, the last thickness increasing circuit again with plating or electroless deposition mode, the method mainly adopts etching mode, therefore line pitch is less, from micron order (10-60 μm) to nanoscale (10-90nm), but the equipment investment needed for the method high and safeguard not easily, and it is larger to the pressure of environmental protection.
Thick film mainly comprises: first on ceramic substrate, get through hole with laser-beam drilling machine, then through hole printing and pattern printing is utilized to form power-on and power-off conducting and the metallization circuitous pattern of independent pattern on substrate, then vacuum-sintering is carried out, organic solvent in removing slurry and organic binder bond, finally plate one deck NiPdAu coating or nickel gold plate or other coating in electroless deposition mode on pattern.There is following shortcoming in the method: 1) coating surface evenness is low, and error amount is about 1-3 μm; 2) relative position precision is affected by printing silk-screen plate tension force and print pass low; 3) print copper layer thickness is limited, is generally 10-30 μm, and layers of copper is thicker, and pattern edge layers of copper is subsided more serious, affects substrate insulating properties, and production cost can improve greatly.But thin copper layer thickness can not meet resistance to big current, withstand large voltage and high situation of dispelling the heat.
Therefore, a kind of method forming thicker (20-100 μm) layers of copper on ceramic substrate is newly proposed very necessary, to avoid the shortcoming such as existing manufacturing process length and equipment investment height.
Summary of the invention
Have that processing procedure is long, cost is high in view of the technique that the increase copper of prior art is thick and the shortcoming such as environment is unfriendly, the invention provides a kind of method increasing ceramic substrate copper layer thickness, and the metallized ceramic base plate manufactured by the method.
The invention provides the method increasing ceramic substrate copper layer thickness, the method comprises the following steps:
(1) on ceramic substrate, laser drilling is carried out, to form lower through-hole on described ceramic substrate;
(2) ceramic substrate enterprising work hole printing and the pattern printing of upper lower through-hole is formed in step (1), to form certain thickness circuit pattern on described ceramic substrate, described pattern printing comprises design and manufactures pattern printing silk screen plate, wherein, the process of described design comprises connects each independently pattern respectively with two straight lines, forms whole plate conduct to make the circuit pattern of mutual electric insulation;
(3) ceramic substrate conducted is formed in high temperature sintering step (2);
(4) copper electroplating layer is carried out to the ceramic substrate of step (3) after sintering.
Present invention also offers the metallized ceramic base plate manufactured by said method.
The copper layer thickness of metallized ceramic base plate that this method is produced is at 20-100 μm, and its effect is better than thick film and suitable with membrane process, and whole technological process of the present invention comparatively membrane process shorten, manufacturing cost is reduced.
Accompanying drawing explanation
Fig. 1 is the integrated artistic flow chart of embodiments of the invention;
The figure that Fig. 2 is formed when being a kind of pattern printing of the prior art;
The figure that Fig. 3 is formed when being and carrying out pattern printing according to embodiments of the invention.
Embodiment
Below the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
The invention provides a kind of method increasing ceramic substrate copper layer thickness, the method comprises the following steps:
(1) on ceramic substrate, laser drilling is carried out, to form lower through-hole on described ceramic substrate;
(2) ceramic substrate enterprising work hole printing and the pattern printing of upper lower through-hole is formed in step (1), to form certain thickness circuit pattern on described ceramic substrate, described pattern printing uses the drawing making pattern printing silk-screen plate designed, mainly when design, mutual for each script independently pattern is together in series with two thin straight lines respectively, the circuit pattern of electric insulation mutually originally can be made like this to be formed conduct, meet plating conditions;
(3) ceramic substrate conducted is formed in high temperature sintering step (2);
(4) copper electroplating layer is carried out to the ceramic substrate of step (3) after sintering.
In step (1), the process of described laser drilling can comprise: the punch operation of with ceramic laser puncher SF-HFP-3000, ceramic substrate being carried out to through hole and location hole, wherein, the condition of punching can comprise: laser power is 2100-2700W, laser pulse width is 0.20-0.70ms, and laser frequency is 1HZ.
In the present invention, in described upper lower through-hole, upper aperture can be 100-140 μm, and lower aperture can be 80-100 μm.Under preferable case, described upper aperture is 125-140 μm, and described lower aperture is 90-100 μm, can ensure the requirement that copper is starched abundant filling vias and conducted to meet upper and lower pattern so further.
Well known to a person skilled in the art and be, after having carried out described laser drilling, need to clean to remove laser drilling margin residual thing to ceramic substrate cleaning fluid, the process of described cleaning can comprise: soak 8-24 hour with 6-20wt% dust technology, grinding removing laser drilling margin residual thing after point three sections of adverse current washings.The detailed process of described cleaning is the selection of this area routine, does not repeat them here.
Being not particularly limited the kind of described ceramic substrate in the present invention, usually, can be aluminium oxide ceramic substrate, aluminum nitride ceramic substrate or silicon carbide ceramics substrate.From improving the angle of described ceramic substrate with the bonding force of the coating formed subsequently further, described ceramic substrate is preferably aluminium oxide ceramic substrate or aluminum nitride ceramic substrate.
The thickness of described ceramic substrate can be the selection of this area routine, such as, can be 0.25-0.63mm.
In step (2), the process of described through hole printing and pattern printing can comprise: after the first bronze medal slurry is stirred 0.5-1.5h, via through holes printing machine carries out through hole printing, then dry 10-30min; After second bronze medal slurry is stirred 0.5-2h, carry out pattern printing through pattern printing machine, drier 10-30min.
Described first bronze medal slurry, the second bronze medal slurry for this area carry out through hole printing, pattern printing the copper commonly used starch.Usually, described copper slurry can contain copper powder, silver powder, organic solvent, organic bond and active metal.
In described first bronze medal slurry and the second bronze medal slurry, organic solvent, organic bond and active metal can be all the selection of this area routine, and wherein, described organic solvent can be terpinol, toluene, methylcellulose or ethyl cellulose; Described organic bond can be as at least one in PMMA, methylcellulose and ethyl cellulose; Described active metal can be at least one in Ti, Zr and Hf.
Preferably, the viscosity of described first bronze medal slurry can control at 100-180mPas, and the viscosity of described second bronze medal slurry can control at 150-200mPas.
In the present invention, the condition of described pattern printing makes the thickness of the figure formed be preferably 15-35 μm, like this can while avoiding causing sintering layers of copper to be separated with pottery because of the not enough institute of copper layer thickness, reduction pattern printing cost.More preferably, the condition of described pattern printing makes the thickness of the figure formed be 10-20 μm.
In step (3), the method for described high temperature sintering is the selection of this area routine, and such as, the condition of high temperature sintering can comprise the first stage and second stage of carrying out successively.The temperature of described first stage can be 350-450 DEG C, is preferably 390-410 DEG C; Time can be 0.5-2 hour, is preferably 1-1.5 hour.The temperature of described second stage can be 850-950 DEG C, is preferably 860-880 DEG C; Time can be 2-4 hour, is preferably 2.5-3 hour.
In step (3), described high temperature sintering is preferably 1 × 10 in vacuum degree
-5-1 × 10
-4carry out under Pa.
Further preferably, the condition of described high temperature sintering makes the thickness of circuit pattern be 2-6 μm, can meet the adhesion requirement between layers of copper and pottery so on the one hand, can reduce the cost of pattern printing on the other hand.
In step (4), the process of carrying out copper electroplating layer can comprise: successively the ceramic substrate of step (3) after sintering is carried out pickling, two washing, pickling, electro-coppering, two washing and drying.The detailed process that ceramic substrate carries out copper electroplating layer is the selection of this area routine, does not repeat them here.
In the present invention, the thickness of the layers of copper formed after copper electroplating layer is preferably 20-100 μm, can reduce manufacturing cost on the one hand, can ensure that again the metallized ceramic base plate obtained has higher resistance to electric current, proof voltage and high heat-sinking capability on the other hand.
In order to improve corrosion resistance and the conductive capability of described metallized ceramic base plate further.Through step (4), that is, after carrying out copper electroplating layer to the ceramic substrate of step (3) after sintering, described method also comprises: (5) carry out plated nickel porpezite or nickel gold on the surface of the ceramic substrate being formed with layers of copper.The method of nickel plating porpezite or nickel gold is the selection of this area routine.Do not repeating at this.
Present invention also offers the metallized ceramic base plate manufactured by said method.The low cost of manufacture of the metallized ceramic base plate adopting said method to manufacture, has higher resistance to big current, withstand large voltage and high heat-sinking capability.In addition, between the ceramic substrate of described metallized ceramic base plate and the layers of copper of formation, there is higher bonding force.
Below in conjunction with embodiment, the present invention is further described, but can not therefore limit the scope of the invention.
In following examples, adopt the copper layer thickness of PCB special purpose copper thick tester CMI760 measurement line layer.The adhesive strength method of testing of line layer is: adopt the experiment of ailhead vertical tension to measure film adhesion, after wiring board is cleaned, with powerful organic adhesive, ailhead is sticked at copper wire layer surface, then measure ailhead and separate required power with wiring board, device for measuring force is spring scale, and full scale is 10kgf, and minimum scale is 0.1kgf, therefore accuracy is 0.05kgf, and draw speed is 1.5cm/min.
Embodiment
This enforcement is for illustration of the method for increase ceramic substrate copper layer thickness of the present invention and the metallized ceramic base plate that manufactured by the method.
First use ceramic laser puncher SF-HFP-3000 to AlN ceramic (size 4.5 inch, thickness 0.381mm, purchased from Tokuyama Co., Ltd) carry out punch operation, wherein, the condition of punching can comprise: laser power is 2700W, laser pulse width is 0.30ms, laser frequency is 1Hz, upper aperture in the upper lower through-hole formed is 125-135 μm, and lower aperture is 95-100 μm.Then, soak this AlN ceramic 16 hours with 10wt% dust technology, grinding removing laser drilling margin residual thing after point three sections of washings.Then through hole printing and pattern printing is carried out respectively with through hole printing machine and pattern printing machine, the first bronze medal slurry viscosity that through hole printing uses is for 100mPas(is purchased from opening up from reaching company of electric wire Co., Ltd., stir 40 minutes before using), the second bronze medal slurry viscosity that pattern printing uses reaches company of electric wire Co., Ltd. at 150mPas(certainly purchased from opening up, stir 1 hour before using), after each printing in drying box in 100 DEG C of dry 20min, pattern print copper layer thickness is the figure of 14 μm, then ceramic substrate being put into sintering furnace, is 0.3 × 10 in vacuum degree
-4under the condition of Pa, keep 1 hour and 3 hours when 400 DEG C and 880 DEG C respectively, whole sintering duration 8 hours, comprises temperature fall time.Substrate copper layer thickness after sintering remains on about 60% and is 8.4 μm, by layers of copper surface roughness Ra < 0.3 μm after grinder grinding, finally carry out electro-coppering operation, current density is 16ASF, form copper layer thickness 80 μm, the adhesive strength of line layer is 11Kgf after tested.
Claims (8)
1. increase a method for ceramic substrate copper layer thickness, the method comprises the following steps:
(1) on ceramic substrate, laser drilling is carried out, to form lower through-hole on described ceramic substrate;
(2) ceramic substrate enterprising work hole printing and the pattern printing of upper lower through-hole is formed in step (1), to form certain thickness circuit pattern on described ceramic substrate, described pattern printing comprises design and manufactures pattern printing silk screen plate, wherein, the process of described design comprises connects each independently pattern respectively with two straight lines, forms whole plate conduct to make the circuit pattern of mutual electric insulation;
(3) ceramic substrate conducted is formed in high temperature sintering step (2);
(4) copper electroplating layer is carried out to the ceramic substrate of step (3) after sintering.
2. method according to claim 1, wherein, in described upper lower through-hole, upper aperture is 125-140 μm, and lower aperture is 90-100 μm.
3. method according to claim 1, wherein, described ceramic substrate is aluminium oxide ceramic substrate or aluminum nitride ceramic substrate.
4. method according to claim 1, wherein, in step (3), described high temperature sintering comprises the first stage and second stage of carrying out successively, and the temperature of described first stage is 390-410 DEG C, and the time is 1-1.5 hour; The temperature of described second stage is 860-880 DEG C, and the time is 2.5-3 hour; Described high temperature sintering is 1 × 10 in vacuum degree
-5-1 × 10
-4carry out under Pa.
5. method according to claim 4, wherein, the condition of described high temperature sintering makes the thickness of circuit pattern be 6-12 μm.
6. method according to claim 1, wherein, in step (4), the condition of described copper electroplating layer makes the thickness of layers of copper be 20-100 μm.
7. method according to claim 1, wherein, after carrying out copper electroplating layer to the ceramic substrate of step (3) after sintering, described method also comprises: (5) carry out plated nickel porpezite or nickel gold plate on the surface of the ceramic substrate being formed with layers of copper.
8. the metallized ceramic base plate that in a claim 1-7, method described in any one manufactures.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107785470A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | UV LED auxiliary frames ceramic substrates and its manufacture method |
| CN107785469A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | The method for packing and UVLED base of ceramic structures of a kind of UVLED base of ceramic |
| CN107785471A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic |
| CN107995781A (en) * | 2017-12-05 | 2018-05-04 | 天津荣事顺发电子有限公司 | A kind of aluminium nitride ceramics circuit board and preparation method |
| CN108323003A (en) * | 2018-01-24 | 2018-07-24 | 深圳市牧泰莱电路技术有限公司 | A kind of ceramic circuit-board and its manufacturing method with plated-through hole |
| CN109346256A (en) * | 2018-12-05 | 2019-02-15 | 中国振华集团云科电子有限公司 | A kind of resistor chain and preparation method thereof |
| CN109734481A (en) * | 2019-03-18 | 2019-05-10 | 昆山福烨电子有限公司 | A kind of production technology of cermet thick film circuit |
| CN110602889A (en) * | 2019-10-21 | 2019-12-20 | 深圳市中基自动化有限公司 | Contact circuit board process for lithium battery formation |
| CN111834324A (en) * | 2019-04-15 | 2020-10-27 | 谭祖荣 | Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof |
| CN114222446A (en) * | 2021-12-30 | 2022-03-22 | 无锡天杨电子有限公司 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
| CN115448746A (en) * | 2022-08-22 | 2022-12-09 | 浙江湖州新京昌电子有限公司 | Production process for ceramic substrate |
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| WO2013164348A1 (en) * | 2012-05-02 | 2013-11-07 | Ceramtec Gmbh | Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias |
| CN103429010A (en) * | 2012-05-25 | 2013-12-04 | 大毅科技股份有限公司 | Forming method for conductive jack of ceramic heat dissipation substrate |
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| CN107785470B (en) * | 2016-08-24 | 2020-06-05 | 浙江德汇电子陶瓷有限公司 | UV-LED auxiliary frame ceramic substrate and manufacturing method thereof |
| CN107785469A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | The method for packing and UVLED base of ceramic structures of a kind of UVLED base of ceramic |
| CN107785471A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic |
| CN107785470A (en) * | 2016-08-24 | 2018-03-09 | 浙江德汇电子陶瓷有限公司 | UV LED auxiliary frames ceramic substrates and its manufacture method |
| CN107995781A (en) * | 2017-12-05 | 2018-05-04 | 天津荣事顺发电子有限公司 | A kind of aluminium nitride ceramics circuit board and preparation method |
| CN108323003A (en) * | 2018-01-24 | 2018-07-24 | 深圳市牧泰莱电路技术有限公司 | A kind of ceramic circuit-board and its manufacturing method with plated-through hole |
| CN109346256A (en) * | 2018-12-05 | 2019-02-15 | 中国振华集团云科电子有限公司 | A kind of resistor chain and preparation method thereof |
| CN109734481A (en) * | 2019-03-18 | 2019-05-10 | 昆山福烨电子有限公司 | A kind of production technology of cermet thick film circuit |
| CN109734481B (en) * | 2019-03-18 | 2021-09-21 | 昆山福烨电子有限公司 | Production process of metal ceramic thick film circuit |
| CN111834324A (en) * | 2019-04-15 | 2020-10-27 | 谭祖荣 | Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof |
| CN110602889A (en) * | 2019-10-21 | 2019-12-20 | 深圳市中基自动化有限公司 | Contact circuit board process for lithium battery formation |
| CN114222446A (en) * | 2021-12-30 | 2022-03-22 | 无锡天杨电子有限公司 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
| CN115448746A (en) * | 2022-08-22 | 2022-12-09 | 浙江湖州新京昌电子有限公司 | Production process for ceramic substrate |
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