CN103429010A - Forming method for conductive jack of ceramic heat dissipation substrate - Google Patents
Forming method for conductive jack of ceramic heat dissipation substrate Download PDFInfo
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- CN103429010A CN103429010A CN2012101678323A CN201210167832A CN103429010A CN 103429010 A CN103429010 A CN 103429010A CN 2012101678323 A CN2012101678323 A CN 2012101678323A CN 201210167832 A CN201210167832 A CN 201210167832A CN 103429010 A CN103429010 A CN 103429010A
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Abstract
The invention relates to a forming method for a conductive jack of a ceramic heat dissipation substrate. The method comprises the following steps of a substrate preparing step, a hole drilling step, a printing silver colloid hole filling step, a sputtering coating step, an electro-coppering step, a photoresistance layer forming step, an exposing step, a development step, an etching step, a photoresistance layer removing step, a line moulding step, a nickel plating/sputter coating step, and a silver plating step. On the basis of the forming steps, a conductive jack with the advantages of ideal heat conduction efficiency, low cost, and stable physical property can be manufactured.
Description
Technical field
The present invention is the formation method of relevant a kind of ceramic heat-dissipating substrate conductive jack, refers in particular to a kind of formation method with conductive jack that desirable heat transfer efficiency, low cost and physical property are stable that makes.
Background technology
Due to the fast development of electronic industry, the current densities on circuit board is more and more higher, also causes more and more fugitive removing not of circuit board gathers in use used heat.And circuit board has the trend of light and handyization in the requirement of function now, make circuit board often all be installed in narrow and small confined space, and the result that the used heat that operation produces can't distribute not only can affect the running quality of circuit, also can reduce the useful life of associated component.
Prior art is that heat conduction adhesion resin is set on a metal fin, on heat conduction adhesion resin, many copper conductors is set again, then heat generating component is arranged on many copper conductors.The heat produced during high heat generating component work is transmitted to metallic heat radiating plate through heat conduction adhesion resin, then is dispelled the heat through metallic heat radiating plate.
If rely on several radiating subassemblies to assist heat radiation, not only can increase the density space of substrate, also can increase the not optimum of heat radiation, also increase the burden of substrate simultaneously.
And, while generally producing aluminum oxide substrate, the greatest difficulty point faced is the problem that the conductive jack hole is filled, when aperture is excessive will fill up the time, circuit also can thicken thereupon; When aperture is too small, electroplate liquid can't infiltrate hole to be electroplated, and to the practitioner, has brought puzzlement.
In view of this, the inventor sets about studying improvement, through studying for a long period of time, testing, has finally developed the present invention.
Summary of the invention
The present invention aims to provide a kind of formation method of ceramic heat-dissipating substrate conductive jack, makes ceramic heat-dissipating substrate have good heat dispersion, and the conductive jack be formed on substrate has good conductivity.
Formation method according to ceramic heat-dissipating substrate conductive jack of the present invention, it forms step and comprises: substrate preparation process, boring step, printing elargol filling perforation step, sputter step, electro-coppering step, making photoresist layer step, step of exposure, development step, etching step, photoresist layer are removed the steps such as step, circuit forming step, nickel plating/sputter step and silver-plated step, make that to have desirable heat transfer efficiency, low cost and physical property stable, there is the aluminum oxide substrate of conductive jack.
According to the formation method of ceramic heat-dissipating substrate conductive jack of the present invention, further can etch the circuit of comparatively meticulous not modification, and can economize except a large amount of copper etching steps, be the first purpose of the present invention.
Formation method according to the conductive jack of ceramic heat-dissipating substrate of the present invention, can effectively control the size of conductive jack hole, and the present invention selects aluminum oxide substrate comparatively cheap and that thermal conductivity coefficient is high, the effect that therefore can acquire a certain degree on cost effect and heat radiation function; Rear extended meeting imports the aluminium nitride substrate of super-high heat-conductive coefficient, in order to be issued to better radiating effect at small size more.With regard to electrical efficiency, jack can successfully be inserted copper and be conducted electricity, and therefore there is no the not good problem of electrical efficiency, and can increase the function of heat transfer efficiency, be another object of the present invention.
According to the formation method of the conductive jack of ceramic heat-dissipating substrate of the present invention, be specially adapted to produce the electronic building brick (for example high-brightness LED) of high heat, be another purpose of the present invention.
According to the formation method of the conductive jack of ceramic heat-dissipating substrate of the present invention, can be divided into again without wire and wire is arranged.Wherein, without wire, in order to make its conduction, electroplated, test piece not conducting mutually after the circuit moulding, so want elder generation's copper plating film in test piece to etch circuit, this kind of mode circuit is comparatively precisely indeformable again.Wire is arranged, and is to etch after circuit to also have the wire can conducting, therefore, can first circuit etching after re-plating copper, this kind of mode can be saved the step of the thick copper film of etching, is another purpose of the present invention.
As for detailed structure of the present invention, application principle, effect and effect, with reference to following description with reference to the accompanying drawings, can be understood fully.
The accompanying drawing explanation
Fig. 1 is summary flow chart of steps of the present invention.
Fig. 2 is the detailed step flow chart of Fig. 1.
Fig. 3 A～3F is the section diagram of corresponding each flow process.
Fig. 4 is the summary flow chart of steps of second embodiment of the invention.
Fig. 5 is the detailed step flow chart of Fig. 4.
Fig. 6 A～6F is the section diagram of corresponding each flow process of the second embodiment.
Fig. 7 is the flow chart of steps of third embodiment of the invention.
Fig. 8 A～8H is the section diagram of corresponding diagram 7 steps flow charts.
The primary clustering symbol description:
100,100A: substrate preparation process
1,1A, 1B: substrate
11,11A, 11B: Cutting Road
200,200A: boring step
21,21A, 81: hole
300,300A, 300B: Seed Layer forms step
301,301A: printing filling perforation step
302,302A: sputter step
303,303A, 303B: Seed Layer
400,400A: electro-coppering step
4,4A, 4B: copper layer
500,500A: pattern imaging step
501,501A: photoresist layer forms step
502,502A: step of exposure
503,503A: development step
504,504A: etching step
505,505A: photoresist layer is removed step
51,51A: coating
600,600A: circuit forming step
600B: striping step
700,700A: nickel plating step
700B: etching step
800,800A, 800B: silver-plated step
801,801A, 801B: silver layer
83: photoresist layer
Embodiment
The formation method of ceramic heat-dissipating substrate conductive jack of the present invention, can be divided into and wire be arranged and without two kinds of execution modes of wire.Without the formation method of the ceramic heat-dissipating substrate conductive jack of wire, it forms step as depicted in figs. 1 and 2, comprising:
Substrate preparation process 100: select aluminum oxide substrate or aluminium nitride substrate as main substrate 1, form several Cutting Roads 11 (as shown in Figure 3A) on substrate 1 surface; This Cutting Road 11 can be formed at directly to, also can be formed at laterally, so that substrate can fracture from Cutting Road 11, to be fixed the ceramic heat-dissipating substrate unit of size;
Boring step 200: with the Laser drill technology, on substrate 1, hole 21 (as shown in Figure 3 B) is holed to form in predetermined conductive hole position.Because the Laser drill technology is to utilize material to absorb laser light increase temperature to gasify, therefore can be holed to the material of ultrahigh hardness, and, because the laser live width can be superfine, so can get out, there is smaller aperture due and the higher hole of precision.Utilize this advanced person and accurate laser etching mode to carry out small hole boring, have and improve precision, reduce damage to hard substrate boring, get out smaller aperture due and the advantage such as penetration rate faster;
Seed Layer forms step 300: can select to print filling perforation step 301 or sputter step 302 and form Seed Layer 303 (as shown in Figure 3 C).Wherein:
Printing filling perforation step 301: be that the conducting resinls such as elargol, copper glue or carbon ink are printed on substrate 1, it is inserted among hole 21;
Sputter step 302: the alloys such as sputter ambrose alloy manganese, nickel chromium triangle, titanium tungsten or ambrose alloy on substrate 1, to increase the degree of sticking together between electro-coppering and aluminum oxide substrate; If use ambrose alloy manganese and ambrose alloy, select iron chloride or sodium peroxydisulfate etching, titanium is used the hydrogen peroxide etching;
Electro-coppering step 400: by copper electroplating layer 4 to thicken Seed Layer 300;
Pattern imaging step 500: form line pattern on substrate 1, it comprises that photoresist layer forms step 501, step of exposure 502, development step 503, etching step 504 and photoresist layer and removes step 505.Wherein,
Photoresist layer forms step 501: the one side that forms circuit on substrate 1 attaches dry film, not etched with protection circuit; Photoresistance is used wet type eurymeric photoresistance liquid solution, and the plating method is revolved in employing is coated on aluminum oxide substrate it; Perhaps, the photoresistance that uses minus photoresistance film to form through hot pressing
Step of exposure 502: after circuit is made to legal light shield, locate in advance and be flattened on the substrate that posts dry film, through exposure machine vacuumized, pressing plate and ultraviolet ray irradiate and complete, through ultraviolet irradiation, make dry film produce polymerization, the circuit covered through light shield can be by ultraviolet (uv) transmission;
Development step 503: the dry film that utilizes developer solution will not produce polymerization is partly removed, and then will need the circuit retained to display with physics and chemical stripping mode;
Etching step 504: utilize etching mode that substrate surface is removed to (as shown in Fig. 3 E) except the coating 51 copper wire; Also can use the immersion etching solution to coordinate the ultrasonic vibrating mode to carry out etching;
, need explanation herein, etching is the pattern according to line design, and the Seed Layer 303, the copper electroplating layer 4 that do not form circuit pack 51 on substrate are removed.Can make two adjacent hole 211,212 not conductings according to shown in Fig. 3 E, or two adjacent holes 213,214 are conducting state, below the embodiment of record is also like this;
Photoresist layer is removed step 505: remove residual dry film on substrate surface;
Circuit forming step 600: be on the line pattern of imaging on substrate 1 copper facing to form circuit;
Nickel plating step 700: nickel dam on the copper wire plated surface moves to the copper layer to avoid copper ion migration in copper wire or the silver ion of top.The mode of nickel plating is optional, and by electronickelling, sputter ambrose alloy or chemical nickel, (nickel phosphorus for example, nickel phosphorus can be selected low-phosphorous, middle phosphorus, high phosphorus.The corrosion stability of high phosphorus better but conductive capability is poor, low-phosphorously presents contrary trend)
Silver-plated step 800: plate silver layer 801 in copper wire, make circuit meet the high frequency requirement.Silver-plated optional by electrosilvering or chemistry silver, electrogilding or chemistry gold (chemical porpezite), electrotinning or chemical tin.Wherein, electric conducting material only need be used plating mode, and electrically non-conductive material needs just can carry out plated film by the chemical plating mode, in addition, the chemical plating mode has preferably the advantages such as stepcoverage power, uniform film thickness and rate of film build be fast, and the price of preparation gold thin film is higher, but stable not oxidation.
By above step, the present invention is on substrate after first sputter Seed Layer, and re-plating copper, follow-uply form circuit to copper film and Seed Layer etching again, then nickel plating/silver on the line.Carry out circuit etching with conventional first sputter Seed Layer, then the processing procedure of electro-coppering/nickel/silver is compared again, and the present invention can etch circuit more accurately, more easily imports more small processing procedure so that follow-up.
Fig. 4 and the formation method that Figure 5 shows that the ceramic heat-dissipating substrate conductive jack of wire, it forms step and comprises:
Substrate preparation process 100A: select aluminum oxide substrate or aluminium nitride substrate as main substrate 1A, form several Cutting Road 11A (as shown in Figure 6A) on substrate 1A surface;
Boring step 200A: with the Laser drill technology, on substrate 1, hole 61 (as shown in Figure 6B) is holed to form in predetermined conductive hole position.
Seed Layer forms step 300A: can select to print filling perforation step 301A or sputter step 302A and form Seed Layer 303A (as shown in Figure 6 C).
Pattern imaging step 400A: form line pattern on substrate 1, it comprises that photoresist layer forms step 401A, step of exposure 402A, development step 403A, etching step A04A and photoresist layer and removes step 405A, removes copper cash coating 41A in addition.
Circuit forming step 500A: on substrate 1A on the line pattern of imaging copper facing to form circuit;
Electro-coppering step 600A: through copper electroplating layer 4A, thicken circuit;
Nickel plating step 700A: nickel dam on the copper wire plated surface moves to the copper layer to avoid copper ion migration in copper wire or the silver ion of top.The mode of nickel plating is optional by electronickelling, sputter nickel-copper or chemical nickel;
Silver-plated step 800A: plate silver layer 801A in copper wire, make circuit meet the high frequency requirement.
Figure 7 shows that the third embodiment of the present invention, as shown in the figure, it forms step and comprises:
Seed Layer forms step 300B: sputter copper seed layer 303B (as shown in Figure 8 C) on substrate 1B;
Electro-coppering step 500B: copper electroplating layer 4B thickens circuit (as shown in Fig. 8 E);
Silver-plated step 800B: plate silver layer 801B (as shown in Fig. 8 H) above the copper layer of copper wire, also can select chemical silvering, chemical nickel plating-Jin or chemical nickel plating-palladium-Jin, make circuit meet the high frequency requirement.
Need explanation, the above is preferably specific embodiment of the present invention, if the change that conception according to the present invention is carried out, when the function of its generation does not exceed spiritual that specification and accompanying drawing contain yet, all should comprise within the scope of the present invention.
Claims (9)
1. the formation method of a ceramic heat-dissipating substrate conductive jack adopts following steps successively:
Substrate preparation process: select aluminum oxide substrate or aluminium nitride substrate as main substrate;
Boring step: with the precalculated position boring on substrate of Laser drill technology, and form the hole of a plurality of preset apertures on substrate;
Seed Layer forms step: electric conducting material ambrose alloy manganese, nickel chromium triangle, titanium tungsten or ambrose alloy are formed to Seed Layer on substrate with sputtering method;
The electro-coppering step: copper electroplating layer on Seed Layer, to increase the thickness of Seed Layer;
Pattern imaging step: form step, step of exposure, development step, etching step and photoresist layer via photoresist layer and remove step, form the circuit coating on substrate;
The circuit forming step: above the circuit coating, copper facing is to form circuit;
The nickel plating step: nickel dam on the copper wire plated surface moves to the copper layer to avoid copper ion migration in copper wire or the silver ion of top;
Silver-plated step: plate again silver layer on the surface of aforementioned copper wire.
2. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 1, wherein said Seed Layer forms step also can use printing filling perforation step, elargol, copper glue or carbon ink conducting resinl are printed on substrate and form.
3. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 1 or 2, the photoresist layer of wherein said pattern imaging step forms step, it is the one side attaching photoresistance that wish forms circuit on substrate, not etched with protection circuit, wherein dry film is used wet type eurymeric photoresistance liquid solution, by revolving the plating method, it is coated on aluminum oxide substrate; Perhaps, use minus photoresistance film to form photoresistance through hot pressing.
4. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 3, the etching step of wherein said pattern imaging step, can be used etching machine or use and soak etching solution and coordinate the etching of ultrasonic vibrating mode.
5. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 4, wherein said nickel plating step, optional by electronickelling, sputter nickel-copper or chemical nickel, chemical nickel can be selected the nickel phosphorus in low-phosphorous, middle phosphorus or high phosphorus.
6. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 5, wherein said silver-plated step, silver-plated optional by electrosilvering or chemistry silver, electrogilding or chemistry gold (chemical porpezite), electrotinning or chemical tin.
7. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 6, wherein said electro-coppering step can be selected in Seed Layer and execute reality after forming step, or executes reality after being selected in the circuit forming step.
8. the formation method of a ceramic heat-dissipating substrate conductive jack adopts following steps successively:
Substrate preparation process: select aluminum oxide substrate or aluminium nitride substrate as main substrate, form several Cutting Roads on substrate surface;
The boring step: with the Laser drill technology, on substrate, hole is holed to form in predetermined conductive hole position;
Seed Layer forms step: sputter copper seed layer on substrate;
Pattern imaging step: above the copper layer of substrate, go up successively photoresist layer, exposure and development;
The electro-coppering step: copper electroplating layer is to thicken circuit;
Striping step: the photoresistance on substrate is removed;
Etching step: the copper layer to substrate is etched with the formation circuit;
Silver-plated step: plate silver layer above the copper layer of copper wire, make circuit meet the high frequency requirement.
9. the formation method of ceramic heat-dissipating substrate conductive jack as claimed in claim 8, wherein silver-plated step is optional by electrosilvering or chemistry silver, electrogilding or chemistry gold (chemical porpezite), electrotinning or chemical tin.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101678323A CN103429010A (en) | 2012-05-25 | 2012-05-25 | Forming method for conductive jack of ceramic heat dissipation substrate |
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| CN2012101678323A CN103429010A (en) | 2012-05-25 | 2012-05-25 | Forming method for conductive jack of ceramic heat dissipation substrate |
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Cited By (9)
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| CN104439724A (en) * | 2014-11-10 | 2015-03-25 | 北京大学东莞光电研究院 | Method for machining conductive channels on ceramic substrate through lasers |
| CN105376933A (en) * | 2015-12-22 | 2016-03-02 | 乐健科技（珠海）有限公司 | Ceramic-based printed circuit board and manufacture method thereof, as well as LED module and manufacture method thereof |
| CN105463536A (en) * | 2015-12-01 | 2016-04-06 | 上海交通大学 | Method for preparing graphical thick silver film with low cost |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
| CN105624749A (en) * | 2016-03-28 | 2016-06-01 | 上海申和热磁电子有限公司 | Method for surface metallization of ceramic substrate |
| CN105777210A (en) * | 2016-03-10 | 2016-07-20 | 浙江大学 | Aluminum nitride ceramic CCL (copper-clad laminate) and preparation method thereof |
| CN108901145A (en) * | 2018-07-19 | 2018-11-27 | 惠州市鸿业新型材料有限公司 | A kind of multilager base plate manufacturing method of surfaces nitrided insulating heat-conductive structure |
| CN111490018A (en) * | 2019-01-29 | 2020-08-04 | 瑷司柏电子股份有限公司 | Ceramic substrate element with metal heat conduction bump pad, assembly and manufacturing method |
| CN115802598A (en) * | 2023-01-31 | 2023-03-14 | 博睿光电(泰州)有限公司 | Ceramic substrate and manufacturing method and application thereof |
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| TW201124023A (en) * | 2009-12-31 | 2011-07-01 | Ta I Technology Co Ltd | Method of forming conductive socket of ceramic heat dissipation substrate. |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201124023A (en) * | 2009-12-31 | 2011-07-01 | Ta I Technology Co Ltd | Method of forming conductive socket of ceramic heat dissipation substrate. |
Cited By (13)
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| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
| CN105491795B (en) * | 2014-09-18 | 2018-07-03 | 浙江德汇电子陶瓷有限公司 | A kind of manufacturing method of metallized ceramic base plate and the metallized ceramic base plate manufactured by this method |
| CN104439724A (en) * | 2014-11-10 | 2015-03-25 | 北京大学东莞光电研究院 | Method for machining conductive channels on ceramic substrate through lasers |
| CN104439724B (en) * | 2014-11-10 | 2016-06-29 | 北京大学东莞光电研究院 | A kind of method utilizing Laser Processing conductive channel on ceramic substrate |
| CN105463536A (en) * | 2015-12-01 | 2016-04-06 | 上海交通大学 | Method for preparing graphical thick silver film with low cost |
| CN105376933A (en) * | 2015-12-22 | 2016-03-02 | 乐健科技（珠海）有限公司 | Ceramic-based printed circuit board and manufacture method thereof, as well as LED module and manufacture method thereof |
| CN105777210A (en) * | 2016-03-10 | 2016-07-20 | 浙江大学 | Aluminum nitride ceramic CCL (copper-clad laminate) and preparation method thereof |
| CN105777210B (en) * | 2016-03-10 | 2018-07-17 | 浙江大学 | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof |
| CN105624749A (en) * | 2016-03-28 | 2016-06-01 | 上海申和热磁电子有限公司 | Method for surface metallization of ceramic substrate |
| CN108901145A (en) * | 2018-07-19 | 2018-11-27 | 惠州市鸿业新型材料有限公司 | A kind of multilager base plate manufacturing method of surfaces nitrided insulating heat-conductive structure |
| CN111490018A (en) * | 2019-01-29 | 2020-08-04 | 瑷司柏电子股份有限公司 | Ceramic substrate element with metal heat conduction bump pad, assembly and manufacturing method |
| CN115802598A (en) * | 2023-01-31 | 2023-03-14 | 博睿光电(泰州)有限公司 | Ceramic substrate and manufacturing method and application thereof |
| CN115802598B (en) * | 2023-01-31 | 2023-10-31 | 博睿光电(泰州)有限公司 | Ceramic substrate and manufacturing method and application thereof |
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Application publication date: 20131204 |