CN100596255C - Making method and structure for high power thin line carrier board - Google Patents
Making method and structure for high power thin line carrier board Download PDFInfo
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- CN100596255C CN100596255C CN200610104394A CN200610104394A CN100596255C CN 100596255 C CN100596255 C CN 100596255C CN 200610104394 A CN200610104394 A CN 200610104394A CN 200610104394 A CN200610104394 A CN 200610104394A CN 100596255 C CN100596255 C CN 100596255C
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Abstract
A manufacture method and structure of a high wattage fine circuit support plate. The manufacture method of the high wattage fine circuit support plate is mainly to form a perforation on a copper parent metal. A heat conducting insulating cement with the advantages of high temperature resistance, acid resistance and high heat conducting effect is arranged in the perforation and then a circuit layeris formed on the copper parent metal. The high wattage fine circuit support plate mainly includes the copper parent metal and a metal circuit layer arranged on the copper parent metal; wherein, the copper parent metal is formed with the perforation. The heat conducting insulating cement is arranged in the perforation and between the copper parent metal and the metal circuit layer. The invention has an excellent radiating effect.
Description
Technical field
The present invention relates to a kind of method for making and structure thereof of high power thin line carrier board.
Background technology
Volume is little because of having for light-emitting diode (LED), the advantage of high brightness, low power consumption and low heating, therefore be used in a large number at present on the electronic product of small size, sophistication development, though yet LED has above-mentioned advantage, but but there is the shortcoming of non-refractory in LED, reason is that mostly the encapsulation material of LED is the plasticizing material, in case the temperature of LED raises, be easy to base plate line and encapsulation material are caused harmful effect, when serious even can cause the damage of LED.
Present existing LED encapsulation is to use the BT support plate with support plate more, it is bismaleimide resin (Bismaleimide Triazine Resin) support plate, its glass transition temperature (Tg) is between 180 ℃～190 ℃, when but the BT support plate is as the LED encapsulating carrier plate at present, how it does not have any radiator structure, die for fear of LED when cooperating other electronic building brick running, because the temperature transfer that other electronic building brick produced causes regenerative effect to cause the damage of LED, the bigger heat abstractor of volume needs to arrange in pairs or groups more, but thus, the advantage that the LED volume is little is just limited to and can't be fully played, so if the support plate of LED itself has excellent radiator structure, just can allow the advantage of LED perform to incisively and vividly.
Summary of the invention
Technical problem underlying to be solved by this invention is, overcomes the above-mentioned defective that prior art exists, and a kind of method for making and structure thereof of high power thin line carrier board are provided, and it has excellent radiating effect.
The method for making of high power thin line carrier board of the present invention is:
A kind of method for making of high power thin line carrier board is characterized in that, mainly is to form perforation on the copper base material, and thermal conductive insulation glue high temperature resistant, acidproof and the high heat-conducting effect of tool is set in perforation, forms line layer again on the copper base material.
The method for making of aforesaid high power thin line carrier board comprising copper base material nickel plating step, is that a side at a bronze medal backing material plate is electroplate with the nickel carrier layer as carrier; Universe film is provided with step, is away from the in addition side of nickel carrier layer one deck universe film to be set at the copper base material; For the first time the exposure imaging step is to carry out image transfer on above-mentioned universe film, and only the position that desire is provided with the aftermentioned thermal conductive insulation glue on the copper base material stays universe film; Protection tin layer plating step is at the intermembranous protection tin layer of electroplating as protection copper base material of the universe of copper base material; Etching and stripping tin step, remove to form perforation together with the copper base material at the position that utilizes engraving method will have universe film, will protect the tin layer to remove afterwards again, only stays the copper base material that is formed with perforation; Thermal conductive insulation glue is filled with step, thermal conductive insulation glue is set to form the heat conductive insulating glue-line at the copper base material away from the in addition side of nickel carrier layer, and this thermal conductive insulation glue is filled in the perforation of copper base material; The copper lamination closes and opening step, and pressing one bronze medal layer on above-mentioned heat conductive insulating glue-line utilizes method for drilling holes to offer fenestra on copper layer above the copper base material and heat conductive insulating glue-line; Metallic circuit layer and universe film are provided with step, be the copper base material and above the copper layer and fenestra on the layer of metal line layer is set, and on the metallic circuit layer, universe film is set; The exposure imaging step is to carry out image transfer on the universe film of metallic circuit layer for the second time, and only the position of desire formation line pitch stays universe film on the metallic circuit layer; Protection tin layer plating step is at the intermembranous protection tin layer of electroplating as protection metal line layer of the universe of metallic circuit layer; Etching and stripping tin step, remove to form spacing together with metallic circuit layer and copper layer at the position that utilizes engraving method will have universe film, will protect the tin layer to remove afterwards again, only stays the metallic circuit layer that is formed with spacing; The nickel carrier layer is removed step, will divest as the nickel carrier layer of carrier and be finished product.
The method for making of aforesaid high power thin line carrier board, wherein the metallic circuit layer is a copper metal layer.
High power thin line carrier board of the present invention is:
A kind of high power thin line carrier board, it is characterized in that, mainly include a bronze medal base material, a bronze medal layer and metallic circuit layer, wherein be formed with perforation on the copper base material, reach the copper substrate surface in the perforation and be filled with thermal conductive insulation glue, this copper layer is the surface that is arranged at this thermal conductive insulation glue, and have plural spacing and plural fenestra, each spacing is for running through this copper layer, to expose this thermal conductive insulation glue, and this fenestra is to run through this copper layer and this thermal conductive insulation glue, and to expose this copper base material, this metallic circuit layer is arranged at the surface of this copper layer and the surface of fenestra.
Aforesaid high power thin line carrier board, wherein the metallic circuit layer is a copper metal layer.
By above-mentioned processing procedure, the present invention can make to have the splendid thermal conductive insulation glue of heat-conducting effect on the copper base material as the LED support plate, so can avoid LED support plate and other electronic building brick to use the time, cause the damage of LED assembly because regenerative effect can't dispel the heat.
The invention has the beneficial effects as follows that it has excellent radiating effect.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a manufacturing process schematic diagram of the present invention.
The number in the figure explanation:
10 bronze medal base materials
11 nickel carrier layer
12 universe films
13 protection tin layers
14 perforation
15 heat conductive insulating glue-lines
16 bronze medal layers
17 fenestras
18 metallic circuit layers
19 universe films
20 spacings
21 protection tin layers
Embodiment
See also shown in Figure 1ly, be flow chart of the present invention, the present invention forms perforation on the copper base material, and in perforation thermal conductive insulation glue high temperature resistant, acidproof and the high heat-conducting effect of tool is set, and forms line layer again on the copper base material.
Detailed process step of the present invention includes:
Copper base material nickel plating step is that a side at a bronze medal backing material plate 10 is electroplate with the nickel carrier layer 11 as carrier;
Universe film is provided with step, is away from the in addition side of nickel carrier layer 11 one deck universe film 12 to be set at copper base material 10;
For the first time the exposure imaging step is to carry out image transfer on above-mentioned universe film 12, and only the position that desire is provided with aftermentioned thermal conductive insulation glue 15 on copper base material 10 stays universe film 12;
Protection tin layer plating step is at 12 plating of universe film of copper base material 10 protection tin layer 13 as protection copper base material 10;
Etching and stripping tin step, remove to form perforation 14 together with copper base material 10 at the position that utilizes engraving method will have universe film 12, will protect tin layer 13 to remove afterwards again, only stays the copper base material 10 that is formed with perforation 14;
Thermal conductive insulation glue is filled with step, thermal conductive insulation glue is set to form heat conductive insulating glue-line 15 at copper base material 10 away from the in addition side of nickel carrier layer 11, and this thermal conductive insulation glue also is filled in the perforation 14 of copper base material 10;
The copper lamination closes and opening step, and pressing one bronze medal layer 16 on above-mentioned heat conductive insulating glue-line 15 utilizes method for drilling holes to offer fenestra 17 on copper layer 16 above the copper base material 10 and heat conductive insulating glue-line 15;
Metallic circuit layer and universe film are provided with step, be copper base material 10 and above copper layer 16 and fenestra 17 on the metallic circuit layer 18 that one deck is preferably copper metal layer is set, and universe film 19 is set on metallic circuit layer 18;
The exposure imaging step is to carry out image transfer on the universe film 19 of metallic circuit layer 18 for the second time, and only the position of desire formation line pitch 20 stays universe film 19 on metallic circuit layer 18;
Protection tin layer plating step is at 19 plating of universe film of metallic circuit layer 18 protection tin layer 21 as protection metal line layer 18;
Etching and stripping tin step, remove to form spacing 20 together with metallic circuit layer 18 and copper layer 16 at the position that utilizes engraving method will have universe film 19, will protect tin layer 21 to remove afterwards again, only stays the metallic circuit layer 18 that is formed with spacing 20;
The nickel carrier layer is removed step, will divest as the nickel carrier layer 11 of carrier and be finished product.
The structure of high power thin line carrier board of the present invention mainly includes copper base material 10 and is arranged at metallic circuit layer 18 on the copper base material 10, wherein be formed with perforation 14 on the copper base material 10, be filled with heat conductive insulating layer glue 15 in the perforation 14 and between copper base material 10 and the metallic circuit layer 18.
Claims (4)
1, a kind of method for making of high power thin line carrier board is characterized in that, mainly is to form perforation on the copper base material, and thermal conductive insulation glue high temperature resistant, acidproof and the high heat-conducting effect of tool is set in perforation, and form line layer again on the copper base material, its step comprises:
Copper base material nickel plating step is that a side at a bronze medal backing material plate is electroplate with the nickel carrier layer as carrier;
Universe film is provided with step, is away from the in addition side of nickel carrier layer one deck universe film to be set at the copper base material;
For the first time the exposure imaging step is to carry out image transfer on above-mentioned universe film, and only the position that desire is provided with the aftermentioned thermal conductive insulation glue on the copper base material stays universe film;
Protection tin layer plating step is at the intermembranous protection tin layer of electroplating as protection copper base material of the universe of copper base material;
Etching and stripping tin step, remove to form perforation together with the copper base material at the position that utilizes engraving method will have universe film, will protect the tin layer to remove afterwards again, only stays the copper base material that is formed with perforation;
Thermal conductive insulation glue is filled with step, thermal conductive insulation glue is set to form the heat conductive insulating glue-line at the copper base material away from the in addition side of nickel carrier layer, and this thermal conductive insulation glue is filled in the perforation of copper base material;
The copper lamination closes and opening step, and pressing one bronze medal layer on above-mentioned heat conductive insulating glue-line utilizes method for drilling holes to offer fenestra on copper layer above the copper base material and heat conductive insulating glue-line;
Metallic circuit layer and universe film are provided with step, be the copper base material and above the copper layer and fenestra on the layer of metal line layer is set, and on the metallic circuit layer, universe film is set;
The exposure imaging step is to carry out image transfer on the universe film of metallic circuit layer for the second time, and only the position of desire formation line pitch stays universe film on the metallic circuit layer;
Protection tin layer plating step is at the intermembranous protection tin layer of electroplating as protection metal line layer of the universe of metallic circuit layer;
Etching and stripping tin step, remove to form spacing together with metallic circuit layer and copper layer at the position that utilizes engraving method will have universe film, will protect the tin layer to remove afterwards again, only stays the metallic circuit layer that is formed with spacing;
The nickel carrier layer is removed step, will divest as the nickel carrier layer of carrier and be finished product.
2, the method for making of high power thin line carrier board according to claim 1 is characterized in that described metallic circuit layer is a copper metal layer.
3, a kind of high power thin line carrier board, it is characterized in that, mainly include a bronze medal base material, a bronze medal layer and metallic circuit layer, wherein be formed with perforation on the copper base material, reach the copper substrate surface in the perforation and be filled with thermal conductive insulation glue, this copper layer is the surface that is arranged at this thermal conductive insulation glue, and have plural spacing and plural fenestra, each spacing is for running through this copper layer, to expose this thermal conductive insulation glue, and this fenestra is to run through this copper layer and this thermal conductive insulation glue, and to expose this copper base material, this metallic circuit layer is arranged at the surface of this copper layer and the surface of fenestra.
4, high power thin line carrier board according to claim 3 is characterized in that described metallic circuit layer is a copper metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610104394A CN100596255C (en) | 2006-08-11 | 2006-08-11 | Making method and structure for high power thin line carrier board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610104394A CN100596255C (en) | 2006-08-11 | 2006-08-11 | Making method and structure for high power thin line carrier board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101123849A CN101123849A (en) | 2008-02-13 |
| CN100596255C true CN100596255C (en) | 2010-03-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610104394A Expired - Fee Related CN100596255C (en) | 2006-08-11 | 2006-08-11 | Making method and structure for high power thin line carrier board |
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| CN (1) | CN100596255C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101730386B (en) * | 2008-10-20 | 2011-09-07 | 欣兴电子股份有限公司 | Manufacturing method of circuit board fine line |
| TWI442530B (en) * | 2009-10-14 | 2014-06-21 | Advanced Semiconductor Eng | Package carrier, package structure and process of fabricating package carrier |
| CN106535488A (en) * | 2016-10-12 | 2017-03-22 | 深圳市五株科技股份有限公司 | Slotting structure and method for copper-based circuit board |
| CN109862705A (en) * | 2019-03-29 | 2019-06-07 | 深圳光韵达激光应用技术有限公司 | A kind of PCB circuit board manufacture craft preparing high aspect ratio fine rule road |
| CN113926703A (en) * | 2021-11-17 | 2022-01-14 | 陈波 | Method for manufacturing electroformed screen |
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2006
- 2006-08-11 CN CN200610104394A patent/CN100596255C/en not_active Expired - Fee Related
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| CN101123849A (en) | 2008-02-13 |
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Granted publication date: 20100324 Termination date: 20110811 |