CN202662663U - Led ceramic bracket - Google Patents
Led ceramic bracket Download PDFInfo
- Publication number
- CN202662663U CN202662663U CN 201220201805 CN201220201805U CN202662663U CN 202662663 U CN202662663 U CN 202662663U CN 201220201805 CN201220201805 CN 201220201805 CN 201220201805 U CN201220201805 U CN 201220201805U CN 202662663 U CN202662663 U CN 202662663U
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- ceramic substrate
- led
- layer
- copper
- ceramic
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Abstract
The utility model discloses an LED ceramic bracket, which comprises a ceramic substrate and a copper circuit, wherein the ceramic substrate is provided with through holes, the copper circuit passes through the through holes, a titanium layer is arranged between the copper circuit and the ceramic substrate, and the titanium layer is 0.05-0.2mum thick. The LED ceramic bracket is prepared by the steps of punching, ultrasonic cleaning, ion source etching, magnetron sputtering, chemical copper depositing, dry film laminating, exposing, developing, electroplating for thickening, tinning, dry film removing, titanium and copper layer removing and tin removing. Therefore, the LED ceramic bracket has good heat dissipation effect due to the adoption of AL203 ceramic with thermal conductivity coefficient greater than 20W/m. K as the substrate; all metal layers are high in adhesive force as the ceramic substrate is processed through ultrasonic cleaning, ion source etching and magnetron sputtering and the titanium layer of suitable thickness is sputtered in a matching mode; and the LED ceramic bracket is low in cost, fine in product structure, good in heat dissipation and high in wiring precision, and products can be directly used as precision-type high-power LED chip brackets.
Description
Technical field
The utility model relates to the led support art, refers in particular to a kind of LED ceramics bracket.
Background technology
LED(Light Emitting Diode) be the abbreviation of Light-Emitting Diode, be a kind of can be the solid-state semiconductor device of visible light with electric energy conversion, its core is the LED chip, consist of the PN knot by P type and N type semiconductor material, by compound in the PN knot of electronics and hole, be light with electric energy conversion.With compare with fluorescent lamp from vehement lamp, LED is little with its volume, all solid state, long-life, environmental protection, the series of advantages such as power saving have been widely used in general illumination, automotive lighting, play the part of in decorations illumination, phone photoflash lamp, the big-and-middle size display screen light source module, be widely recognized as third generation revolutionary character lighting source after incandescent lamp, gaseous discharge lamp by the public.
The led chip support is a kind of base electronic component, is one of critical elements of LED encapsulation, is mainly led chip and phase interconnection line thereof the functions such as mechanical carrying, support, air-tightness protection and the heat radiation of promotion LED device are provided.In recent years, raising along with perfect, luminous flux and the light extraction efficiency of semi-conducting material and packaging technology, power-type LED is applied in special lighting fields such as urban look, traffic sign, LCD backlight, automotive lighting, billboards, and strides forward to general lighting market.Yet along with improving constantly of led chip input power, the large caloric value that large dissipation power is brought and demanding light extraction efficiency have proposed renewal, higher requirement to the led chip support.To the high-capacity LED product, its chip set requirement has high electric insulation, high stability, high-termal conductivity and the thermal coefficient of expansion (CTE) that mates with chip, planarization and higher intensity.
Traditionally the most frequently used make the led chip support FR4 printed circuit board (PCB) (PCB), metal-core printed circuit board (MCPCB) and SMD PPA support arranged.The pyroconductivity of pcb board and PPA support about about 0.3W/ (mK), thermal coefficient of expansion is about 13～17ppm/K.Its advantage is that technology is relatively ripe, and with low cost, shortcoming is that hot property is relatively poor, generally can only be applied to traditional low-power LED.The MCPCB plate is that the metal (such as aluminium, copper) that thermal conductivity coefficient is relatively high is put in the pcb board, comes the enhance heat effect with this.But the insulating barrier conductive coefficient is extremely low in the MCPCB plate, so insulating barrier becomes the heat radiation bottleneck of this structure substrate, affects the radiating effect of whole substrate, so that whole thermal conductivity also only is 1～2.2 W/ (mK); Because the existence of insulating barrier so that it can't bear high-temperature soldering, thereby has affected the enforcement of packaging technology, limit the optimization of encapsulating structure simultaneously, therefore be unfavorable for the LED heat radiation.
Ceramic material has the characteristics such as high conductive coefficient, the thermal coefficient of expansion close with led chip, high heat-resisting and anti-ultraviolet radiation, can effectively solve the crooked and yellow problem of heat, is applied to led support and has competitiveness.Adopt the LTCC ceramics bracket of low temperature co-fired technology preparation in the LED industry, to be used, but LTCC has added glass material in order to reduce sintering temperature in material, whole pyroconductivity is reduced between 2～3W/mK.Moreover, LTCC uses wire mark mode printed wiring, make circuit itself have the meticulous not and half tone of the wire diameter width problem of throwing the net, cause the phenomenons such as the circuit precision is not enough, surface smoothness is not good, add that the Multi-stacking compaction sintering has again the problem of substrate shrinkage rates to consider, and do not meet the undersized demand of high power.Therefore, develop have simultaneously high-cooling property, the LED ceramics bracket of high wiring precision will greatly promote high-capacity LED in application and the popularization of lighting field.
The utility model content
In view of this, the utility model is for the disappearance of prior art existence, and its main purpose provides a kind of LED ceramics bracket, and it can effectively solve the not enough and problems such as precision is not high that connect up of existing led support heat-sinking capability.
For achieving the above object, the utility model adopts following technical scheme:
A kind of LED ceramics bracket includes ceramic substrate and is arranged at copper wire on the ceramic substrate; Be provided with through hole on this ceramic substrate, this copper wire is passed this through hole, and the upper and lower surface of ceramic substrate is extended respectively and exposed at the up and down two ends of copper wire, is provided with titanium layer between copper wire and the ceramic substrate, and the thickness of this titanium layer is 0.05～0.2 μ m.
As a kind of preferred version, the main component of described ceramic substrate is aluminium oxide, and the quality percentage composition of aluminium oxide is greater than 95%.
As a kind of preferred version, the upper and lower surface of described ceramic substrate and copper wire all is coated with nickel dam, is coated with gold layer or silver layer on the surface of this nickel dam.
As a kind of preferred version, the thickness of described gold layer or silver layer is 5～10 μ m.
The utility model compared with prior art has obvious advantage and beneficial effect, particularly, and as shown from the above technical solution:
Owing to adopt conductive coefficient greater than the Al of 20W/mK
2O
3Pottery is as base material, so thermal diffusivity is good; Owing to adopt ultrasonic wave that ceramic substrate is cleaned, ceramic substrate is carried out surface etching and magnetron sputtering carries out surface metalation with ion source, and cooperate the titanium layer of sputter suitable thickness, so each adhesive force of metal layer is high; Owing to form the conducting wire with exposure, development and etching mode, so can make circuit carefully directly smooth; The utility model cost is low, and product structure is meticulous, and thermal diffusivity is good, and the wiring precision is high, and product can directly be used as accurate high-capacity LED chip set.
For more clearly setting forth architectural feature of the present utility model and effect, come the utility model is elaborated below in conjunction with accompanying drawing and specific embodiment.
Description of drawings
Fig. 1 is the process chart of the preferred embodiment of the utility model;
Fig. 2 is the first view of manufacturing process in the preferred embodiment of the utility model;
Fig. 3 is the second view of manufacturing process in the preferred embodiment of the utility model;
Fig. 4 is the third state schematic diagram of manufacturing process in the preferred embodiment of the utility model;
Fig. 5 is the 4th view of manufacturing process in the preferred embodiment of the utility model;
Fig. 6 is the 5th view of manufacturing process in the preferred embodiment of the utility model;
Fig. 7 is the 6th view of manufacturing process in the preferred embodiment of the utility model;
Fig. 8 is the 7th view of manufacturing process in the preferred embodiment of the utility model;
Fig. 9 is the enlarged diagram of A position among Fig. 8.
The accompanying drawing identifier declaration:
10, ceramic substrate 11, through hole
20, copper wire 30, titanium layer
40, nickel dam 50, gold layer or silver layer
101, copper layer 102, electroless copper plating
103, dry film 104, light shield
105, tin layer.
Embodiment
Please refer to Fig. 1 to shown in Figure 9, the concrete structure that it has demonstrated the preferred embodiment of the utility model includes ceramic substrate 10 and is arranged at copper wire 20 on the ceramic substrate 10.
As shown in Figure 9, be provided with through hole 11 on this ceramic substrate 10, the main component of this ceramic substrate 10 is aluminium oxide (Al
2O
3), aluminium oxide (Al
2O
3) the quality percentage composition greater than 95%, the quality percentage composition is greater than 95% Al
2O
3The ceramic coefficient meets the requirement of high-capacity LED support thermal diffusivity greater than 20W/mK.
This copper wire 20 is passed this through hole 11, the upper and lower surface of ceramic substrate 10 is extended respectively and is exposed at the up and down two ends of copper wire 20, be provided with titanium layer 30 between copper wire 20 and the ceramic substrate 10, this titanium layer 30 is bonded together copper wire 20 and ceramic substrate 10, and the thickness of this titanium layer 30 is 0.05～0.2 μ m; And the upper and lower surface of this ceramic substrate 10 and copper wire 20 all is coated with nickel dam 40, is coated with gold layer or silver layer 50 on the surface of this nickel dam 40, and the thickness of this gold layer or silver layer 50 is 5～10 μ m.
The manufacturing process of present embodiment LED ceramics bracket is described in detail in detail, includes punching; Ultrasonic Cleaning; The ion source etching; Magnetic control sputtering plating; Electroless copper plating; Paste dry film, exposure, development; Electroplate thickening; Zinc-plated; Remove dry film; Remove titanium, copper layer; Detin; Nickel plating; Gold-plated/steps such as silver, specific as follows:
(1) punching is punched and is formed through hole 11 at ceramic substrate 10, does pre-treatment for the conduction of LED ceramics bracket connects, and as shown in Figure 2, has got some through holes 11 on this ceramic substrate 10.
(2) Ultrasonic Cleaning carries out Ultrasonic Cleaning to the ceramic substrate 10 after the punching, and then oven dry is with the impurity on removal ceramic substrate 10 surfaces and through hole 11 internal faces and contamination etc.
(3) ion source etching is carried out the linear ion source etch processes to ceramic substrate 10 surfaces behind the Ultrasonic Cleaning and through hole 11 internal faces, and the impurity on ceramic substrate 10 surfaces has further been removed in the ion source etching, makes ceramic substrate 10 top layer atom activation, has improved Al
2O
3With the interfacial reaction degree of titanium layer, increased the adhesive force of ceramic substrate 10 metal film on surface.
(4) magnetic control sputtering plating, as shown in Figure 3, on ceramic substrate 10 surfaces after the ion source etching and through hole 11 internal faces, sequentially form a titanium layer 30 and a bronze medal layer 101 with the vacuum magnetic control sputtering way, the thickness of this titanium layer 30 is 0.05～0.2 μ m, and formed copper layer 101 thickness of sputter are 0.5～2.0 μ m; In magnetron sputtering process, if titanium layer 30 and copper layer 101 are excessively thin, adhesive force will descend; If but increase titanium layer 30 and copper layer 101 thickness, and sputtering time will prolong, and production efficiency will descend, and ceramic substrate 10 temperature will raise in the sputter procedure, and hot residual stress increases, and ceramic substrate 10 will produce micro-crack.
Because ceramic substrate 10 is through Ultrasonic Cleaning and ion source etching, and selected the titanium layer of OK range thickness, compared with prior art, the pulling force that copper layer 101 can bear in the present embodiment promotes greatly, bond strength between copper layer 101 and the ceramic substrate 10 strengthens, concrete test data such as table 1:
Table 1
(5) electroless copper plating, mainly be after the step of magnetic control sputtering plating titanium/copper layer, because in the process of sputter, can be formed with numerous pore or bubble, these pores or bubble then when forming the electrical connection of ceramic substrate 10 in the future, can cause and to reach full communicating effect, and, if the size of aforesaid through hole 11 is less than 100 μ m, then can't form one deck conductive layer at the internal face of too small through hole 11 in the sputter process, so after the step of sputter titanium/copper layer, need carry out electroless copper plating 102, the factor that affects ceramic substrate 10 electrical connections is removed fully, that is to say that via electroless copper plating 102, copper hole inwall that can diameter is too small is also enclosed layer of copper, make the upper and lower surface of ceramic substrate 10 realize fully conducting, the thickness of this electroless copper plating 102 is 2～5 μ m, and electroless copper plating 102 thickness are excessively thin, can not fully eliminate pore or the bubble of not having a conducting function of ceramic substrate 10 remained on surface; If but blocked up, will greatly reduce production efficiency.
(6) paste dry film, exposure, development; this step mainly is that the surface of wish formation circuit on ceramic substrate 10 attaches one deck dry film 103(as shown in Figure 4); dry film 103 is a kind of polymerism resins to the ultraviolet ray reaction, and its function protection circuit after polymerization is not etched.Step of exposure is after circuit is made legal light shield 104, in advance on location and the smooth ceramic substrate 10 in posting dry film 103, vacuumize through exposure machine again, pressing plate and ultraviolet ray are shone and are finished, wherein ultraviolet irradiation will make dry film 103 output polymerizations, and because the use of light shield 104, and the circuit pack ultraviolet ray on it can't transmission, the part of therefore, not shone by ultraviolet ray on the dry film 103 can't produce polymerization (as shown in Figure 5).Development step then is that the dry film that utilizes developer solution will not produce polymerization is partly removed, and the circuit that needs are kept displays, and with this, has thin straight smooth characteristic by aforementioned manufacturing technology steps made line pattern out.
(7) electroplate thickening, this step be in aforementioned subsides dry film, exposure, development step the surperficial formed line patterns of ceramic substrate 10 electroplate thickening and fill aforementioned through-hole 11 and the copper wire 20(that forms suitable thickness as shown in Figure 6), owing to form copper wire 20 to electroplate thickening, possess desirable characteristics of electrical conductivity and the loose effect of heat.
(8) zinc-plated, at copper wire 20 top layer tin coatings 105, with not etched in protection copper wire 20 follow-up " removing titanium/copper layer " step.
(9) remove dry film, remove the upper residual dry film 103 in ceramic substrate 10 surfaces, the ceramic substrate 10 behind the removal dry film 103 as shown in Figure 7.
(10) remove titanium, copper layer, utilize etching mode to remove ceramic substrate 10 titanium layer 30 and the copper layers 101 of surface except copper wire 20.
(11) detin is removed the tin layer 105 on copper wire 20 top layers;
(12) nickel plating, nickel dam 40 on the plated surface of aforementioned ceramic substrate 10 and copper wire 20, this nickel dam 40 are for avoiding copper ion migration in the copper wire 20 to the gold layer or silver layer 50 of follow-up formation.
(13) gold-plated/silver is again plated with gold layer or silver layer 50 in the surface of aforementioned copper wire 20, and the thickness of this gold layer or silver layer 50 is 5～10 μ m, and circuit will meet the requirement of high-capacity LED chip set this moment.
At least possess following advantage through the LED ceramics bracket that makes after the above-mentioned steps:
1, circuit is thin directly, evenness is better: this is that high-accuracy led chip support is to the basic demand of circuit, the line construction that now produces by aforementioned exposure, development and etching step is fine and closely woven, meet the requirement of high wiring precision, in addition, by Ultrasonic Cleaning and ion source etching, and to cooperate the thickness of titanium layer be 0.05～0.2 μ m, so that the bond strength of circuit and ceramic substrate is stronger, the serviceability of product is better.
2, tool high-heat conductive efficency and electrical characteristic: because the utility model directly forms the copper wire of suitable thickness with plating mode, conductivity efficient is good, and copper wire itself has desirable radiating effect, therefore possesses desirable conductivity, thermal diffusivity and stable physical characteristic.
3, cost of manufacture is low: because the utility model directly forms the copper wire of suitable thickness with plating mode, itself possessed desirable electrically, and the utility model is selected ceramic substrate, requires lower (greater than 95%) for alumina composition, so can effectively reduce manufacturing cost.
The above, it only is preferred embodiment of the present utility model, be not that technical scope of the present utility model is imposed any restrictions, so every foundation technical spirit of the present utility model all still belongs in the scope of technical solutions of the utility model any trickle modification, equivalent variations and modification that above embodiment does.
Claims (3)
1. LED ceramics bracket is characterized in that: include ceramic substrate and be arranged at copper wire on the ceramic substrate; Be provided with through hole on this ceramic substrate, this copper wire is passed this through hole, and the upper and lower surface of ceramic substrate is extended respectively and exposed at the up and down two ends of copper wire, is provided with titanium layer between copper wire and the ceramic substrate, and the thickness of this titanium layer is 0.05～0.2 μ m.
2. LED ceramics bracket according to claim 1, it is characterized in that: the upper and lower surface of described ceramic substrate and copper wire all is coated with nickel dam, is coated with gold layer or silver layer on the surface of this nickel dam.
3. LED ceramics bracket according to claim 2 is characterized in that: the thickness of described gold layer or silver layer is 5～10 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220201805 CN202662663U (en) | 2012-05-08 | 2012-05-08 | Led ceramic bracket |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220201805 CN202662663U (en) | 2012-05-08 | 2012-05-08 | Led ceramic bracket |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202662663U true CN202662663U (en) | 2013-01-09 |
Family
ID=47457548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220201805 Expired - Fee Related CN202662663U (en) | 2012-05-08 | 2012-05-08 | Led ceramic bracket |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202662663U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709439A (en) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | LED (Light emitting diode) ceramic support and manufacturing method thereof |
| TWI485861B (en) * | 2013-01-04 | 2015-05-21 | Jung Chi Hsien | Rectifier diode structure |
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| CN110275371A (en) * | 2018-03-18 | 2019-09-24 | 宁波舜宇光电信息有限公司 | Projection arrangement and its manufacturing method and depth information device |
| CN111370556A (en) * | 2020-04-08 | 2020-07-03 | 东莞市良友五金制品有限公司 | LED support light source packaging structure and process thereof |
-
2012
- 2012-05-08 CN CN 201220201805 patent/CN202662663U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709439A (en) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | LED (Light emitting diode) ceramic support and manufacturing method thereof |
| CN102709439B (en) * | 2012-05-08 | 2014-11-05 | 东莞市凯昶德电子科技股份有限公司 | LED (Light emitting diode) ceramic support and manufacturing method thereof |
| TWI485861B (en) * | 2013-01-04 | 2015-05-21 | Jung Chi Hsien | Rectifier diode structure |
| CN110275371A (en) * | 2018-03-18 | 2019-09-24 | 宁波舜宇光电信息有限公司 | Projection arrangement and its manufacturing method and depth information device |
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| CN111370556A (en) * | 2020-04-08 | 2020-07-03 | 东莞市良友五金制品有限公司 | LED support light source packaging structure and process thereof |
| CN111370556B (en) * | 2020-04-08 | 2021-04-30 | 广东良友科技有限公司 | LED support light source packaging structure and process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20190508 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |