CN102064265B - Semiconductor chip assembly with post/base heat spreader and substrate - Google Patents
Semiconductor chip assembly with post/base heat spreader and substrate Download PDFInfo
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- CN102064265B CN102064265B CN2010101452421A CN201010145242A CN102064265B CN 102064265 B CN102064265 B CN 102064265B CN 2010101452421 A CN2010101452421 A CN 2010101452421A CN 201010145242 A CN201010145242 A CN 201010145242A CN 102064265 B CN102064265 B CN 102064265B
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- projection
- pedestal
- substrate
- adhesion coating
- lid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to a semiconductor chip assembly with a post/base heat spreader and a substrate. The semiconductor chip assembly at least includes a semiconductor device, the heat spreader, the substrate and an adhesive. The semiconductor device is electrically connected to the substrate and thermally connected to the heat spreader. The heat spreader at least includes a post and a base. The post extends upwardly from the base into an opening in the adhesive and an aperture in the substrate, and the base extends laterally from the post. The adhesive extends between the post and the substrate and between the base and the substrate.The assembly provides signal routing between a pad and a terminal.
Description
Technical field
The present invention relates to a kind of semiconductor wafer group body, particularly relate to a kind of semiconductor wafer group body and manufacture method thereof that is formed by semiconductor element, substrate, adhesion coating and radiating seat.
Background technology
Can provide high voltage, high-frequency and dynamical application such as the semiconductor elements such as semiconductor wafer through encapsulation and un-encapsulated; Those are applied as the execution specific function, and the power of required consumption is very high, right power heal height then semiconductor element give birth to heat the more.In addition, behind packaging density raising and dimension reduction, can dwindle for the surface area of heat radiation, more cause giving birth to heat and aggravate.
Semiconductor element easily produces the problems such as performance decay and shortening in useful life under high-temperature operation, even fault immediately.High heat not only affects wafer usefulness, also may because of thermal expansion do not mate to wafer and arround element produce the thermal stress effect.Therefore, must make the rapid efficiently radiates heat of wafer can guarantee efficient and the reliability of its operation.Article one, the high-termal conductivity path is normally with thermal energy conduction and be dissipated into a surface area than the larger zone of die pad at wafer or wafer place.
Light-emitting diode (LED) generally becomes the alternative source of light of incandescent source, fluorescent lighting and halogen light source recently.LED can be the applications such as medical treatment, military affairs, signboard, signal, aviation, navigation, vehicle, portable device, commercialization and household's illumination high-energy source efficient and cheaply for a long time illumination is provided.For example, LED can be the equipment such as light fixture, flashlight, headlight, searchlight, traffic signal light and display light source is provided.
High power wafer among the LED also produces a large amount of heat energy when high brightness output is provided.Yet under high-temperature operation, LED can occur that colour cast, brightness reduce, shorten useful life and the problem such as fault immediately.In addition, LED has its restriction aspect heat radiation, and then affects its light output and reliability.Therefore, LED especially highlights market for the demand of the high power wafer with great heat radiation effect.
The LED packaging body comprises a LED wafer, a pedestal, electric contact and a hot junction usually.Described pedestal is that hot link is to the LED wafer and in order to support this LED wafer.Electric contact then electrically connect to anode and the negative electrode of LED wafer.Hot junction is linked to the LED wafer via this heat susceptor, and its below carrier can fully dispel the heat to prevent the LED wafer overheated.
Industry actively drops into the research and development of high power wafer encapsulation body and heat-conducting plate with various design and manufacture technology, in the hope of satisfy performance requirements in the environment of this extreme Cost Competition.
Plastic ball grid array (PBGA) encapsulation is that a wafer and a lamination substrate are wrapped in the plastic shell, and then attaches on the printed circuit board (PCB) (PCB) with the tin ball.Described laminated substrate comprises a dielectric layer that usually is made of glass fibre.The heat energy that wafer produces can reach the tin ball via plastic cement and dielectric layer, and then reaches printed circuit board (PCB).Yet because the thermal conductivity of plastic cement and dielectric layer is low, the radiating effect of PBGA is not good.
Quad flat non-pin (QFN) encapsulation is wafer to be arranged on one be welded on the copper die pad of printed circuit board (PCB).The heat energy that wafer produces can reach printed circuit board (PCB) via die pad.Yet, because the routing capabilities of its lead frame intermediary layer is limited, so that the QFN encapsulation can't be applicable to high I/O (I/O) wafer or passive device.
Heat-conducting plate provides the functions such as electrical route, heat management and mechanical support for semiconductor element.Heat-conducting plate comprises a substrate, that is used for the signal route usually provides the radiating seat of heat abstraction function or the weld pad that heat abstractor, can supply electrically to be linked to semiconductor element, and one can be for the terminal that electrically is linked to lower one deck group body.This substrate can be a laminar structure with single or multiple lift routing circuit system and one layer or more dielectric layer.This radiating seat can be a metal base, metal derby or buries metal level underground.
Heat-conducting plate engages lower one deck group body.For example, lower one deck group body can be a lamp socket with printed circuit board (PCB) and heat abstractor.In this example, a LED packaging body is to install on heat-conducting plate, and this heat-conducting plate is then installed on heat abstractor, and heat-conducting plate/heat abstractor time group body and printed circuit board (PCB) are installed in lamp socket again.In addition, heat-conducting plate via the wire electrically connect to this printed circuit board (PCB).From this printed circuit board (PCB) guiding LED packaging body, then disperse the heat energy of LED packaging body and be passed to this heat abstractor by this radiating seat with the signal of telecommunication for this substrate.Therefore, this heat-conducting plate can be the LED wafer one important hot path is provided.
The 6th, 507, No. 102 United States Patent (USP)s authorizing the people such as JUSKEY disclose a kind of group of body, and wherein a composite base plate that is made of the thermosetting resin of glass fibre and curing comprises a central opening.One to have the square or OBL radiating block of similar aforementioned central opening be to adhere to this central opening sidewall thereby be combined with this substrate.Upper and lower conductive layer adheres to respectively top and the bottom of this substrate, and the electrically connect each other of the plating guide hole by running through this substrate.One wafer is to be arranged on the radiating block and routing is engaged to conductive layer, and an encapsulating material is that mould is established and formed on the wafer, and lower conductiving layer then is provided with the tin ball.
During manufacturing, this substrate is one to place second rank (B-STAGE) the resin film on the lower conductiving layer.Radiating block is to be inserted in central opening, thereby is positioned on the lower conductiving layer, and is separated by with a gap with this substrate.Upper conductive layer then is located on this substrate.Upper and lower conductive layer makes the resin fusing and flows in the aforementioned gap and solidify after heating reaches each other pressing.Upper and lower conductive layer forms pattern, thereby forms wiring at this substrate, and resin flash is revealed on the radiating block.Then remove resin flash, radiating block is exposed.Again wafer is placed at last on the radiating block and carries out routing and engage and encapsulation.
Therefore, the heat energy of wafer generation can reach printed circuit board (PCB) via radiating block.Yet when volume production, with manual mode the operation that radiating block is positioned in the central opening is very taken a lot of work, and with high costs.Moreover because the installation tolerance of side direction is little, radiating block is difficult for accurately being positioned in the central opening, causes being prone between substrate and the radiating block situation of gap and routing inequality.Thus, this substrate only part attaches to radiating block, can't obtain enough support forces from radiating block, and easily delamination.In addition, be used for to remove the partially conductive layer and also will remove the radiating block that part is not covered by resin flash with the chemical etching liquor that appears resin flash, make radiating block injustice and difficult combination, the yield that finally causes organizing body is on the low side, reliability is not enough and high cost.
The 6th, 528, No. 882 United States Patent (USP)s authorizing the people such as DING disclose a kind of high heat radiation spherical grid array package body, and its substrate comprises a metal core layer, and wafer then is placed in the die pad zone of metal core layer end face.One insulating barrier is the bottom surface that is formed at metal core layer.Blind hole runs through the straight-through metal core layer of insulating barrier, and is filled with heat radiation tin ball in the hole, is provided with the tin ball corresponding with the tin ball that dispels the heat at this substrate in addition.The heat energy that wafer produces can flow to heat radiation tin ball via metal core layer, flows to printed circuit board (PCB) again.Yet the insulating barrier that is located between metal core layer and printed circuit board (PCB) but causes restriction to the hot-fluid that flows to printed circuit board (PCB).
Authorize the 6th, 670, No. 219 downward ball grid array of a kind of groove of United States Patent (USP) teaching (CDBGA) packaging body of the people such as LEE, wherein a ground plate with central opening is to be arranged on the radiating seat to consist of a heat-radiating substrate.One substrate with central opening is arranged on this ground plate by an adhesion coating with central opening.One wafer is to be installed on this radiating seat by in the formed groove of ground plate central opening, and this substrate is provided with the tin ball.Yet because the tin ball is to be positioned on the substrate, radiating seat also can't the contact print circuit board, causes the thermolysis thermal relief convection current of this radiating seat but not the heat conduction, thereby its radiating effect of limit significantly.
The 7th, 038, No. 311 United States Patent (USP)s authorizing the people such as WOODALL provide a kind of high heat radiation BGA packaging body, and its heat abstractor is inverted T-shaped and comprises a post section and a wide substrate.One substrate that is provided with window type opening is to be placed in the wide substrate, and an adhesion coating then attaches to this substrate with post section and wide substrate.One wafer is to be placed in the post section and routing is engaged to this substrate, and an encapsulating material is mold formed on wafer, then is provided with the tin ball on this substrate.Post section extends through this window type opening, and by this substrate of wide substrate support, as for the tin ball then between wide substrate and substrate periphery.The heat energy that wafer produces can reach wide substrate via post section, reaches printed circuit board (PCB) again.Yet owing to must leave the space that holds the tin ball in the wide substrate, wide substrate only is being stretched on corresponding to the position between center window and the penetralia tin ball below this substrate.Thus, this substrate is just uneven in manufacture process, and rocks easily and crooked, and then causes installation, the routing of wafer to engage and encapsulating material mold formed all very difficult.In addition, this wide substrate may bend because of the mold formed of encapsulating material, in case and the avalanche of tin ball, just may make this packaging body can't be soldered to lower one deck group body.Therefore, the yield of this packaging body is on the low side, reliability is not enough and high cost.
The people's such as ERCHAK U.S. Patent Application Publication case proposes a kind of light-emitting device group body for No. 2007/0267642, and wherein the pedestal of an inverted T-shaped comprises the insulating barrier that a substrate, a protuberance and have through hole, on the insulating barrier and be provided with electric contact.One packaging body with through hole and transparent upper cover is to be arranged on the electric contact.One LED wafer is to be arranged at protuberance and to connect this substrate with routing.This protuberance be in abutting connection with this substrate and extend through insulating barrier and packaging body on through hole, enter in the packaging body.Insulating barrier is to be arranged on this substrate, and insulating barrier is provided with electric contact.Packaging body is to be arranged on the described electric contact and with insulating barrier to keep spacing.The heat energy that this wafer produces can reach this substrate via protuberance, and then arrives a heat abstractor.Yet described electric contact is difficult for being arranged on the insulating barrier, is difficult to and lower one deck group body electrically connect, and the multilayer route can't be provided.
Existing packaging body and heat-conducting plate have significant drawback.For example, such as the electrical insulating material of the low heat conductivities such as epoxy resin radiating effect is caused restriction, yet the electrical insulating material that the epoxy resin of filling with pottery or carborundum etc. has a high thermal conductivity has the shortcoming of the low and volume production high cost of adherence.This electrical insulating material may be in manufacturing process or the operation initial stage namely because of the delamination of being heated.If then routing capabilities is limited for this substrate individual layer Circuits System, if but this substrate is the multilayer circuit system, then its blocked up dielectric layer will reduce radiating effect.In addition, front case technology also has radiating seat usefulness deficiency, volume is excessive or be difficult for hot link to problems such as lower one deck group bodies.The manufacturing process of front case technology also is unsuitable for cheaply volume production operation.
Because all development situations and the relevant limit of existing high power semiconductor component encapsulation body and heat-conducting plate, industry is real need a kind of cost-effective, usefulness reliable, be suitable for volume production, multi-functional, the semiconductor wafer group body that can adjust flexibly the signal route and have excellent heat radiation.
Summary of the invention
The cross-reference of related application:
The application's case be filed an application on September 11st, 2009 the 12/557th, the cip application of No. 540 U.S. patent application case, and the 12/557th, No. 540 U.S. patent application case then is the cip application of the 12/406th, No. 510 U.S. patent application case of filing an application on March 18th, 2009.The 12/406th, No. 510 U.S. patent application case advocate to file an application on May 7th, 2008 the 61/071st, file an application in No. 589 U.S. Provisional Patent Application cases, on May 7th, 2008 the 61/071st, file an application in No. 588 U.S. Provisional Patent Application cases, on April 11st, 2008 the 61/071st, file an application in No. 072 U.S. Provisional Patent Application case and on March 25th, 2008 the 61/064th, the priority of No. 748 U.S. Provisional Patent Application cases, the content of above-mentioned each case is incorporated this paper by reference into.Before open the priority that the 12/557th, No. 540 U.S. patent application case advocated the 61/150th, No. 980 U.S. Provisional Patent Application case that on February 9th, 2009 filed an application in addition, its content is incorporated this paper by reference into.
The application's case also be filed an application on September 11st, 2009 the 12/557th, the cip application of No. 541 U.S. patent application case, and the 12/557th, No. 541 U.S. patent application case then is the cip application of the 12/406th, No. 510 U.S. patent application case of filing an application on March 18th, 2009.The 12/406th, No. 510 U.S. patent application case advocate to file an application on May 7th, 2008 the 61/071st, file an application in No. 589 U.S. Provisional Patent Application cases, on May 7th, 2008 the 61/071st, file an application in No. 588 U.S. Provisional Patent Application cases, on April 11st, 2008 the 61/071st, file an application in No. 072 U.S. Provisional Patent Application case and on March 25th, 2008 the 61/064th, the priority of No. 748 U.S. Provisional Patent Application cases, the content of above-mentioned each case is incorporated this paper by reference into.Before open the priority that the 12/557th, No. 541 U.S. patent application case advocated the 61/150th, No. 980 U.S. Provisional Patent Application case that on February 9th, 2009 filed an application in addition, its content is incorporated this paper by reference into.
The invention provides a kind of semiconductor wafer group body, it comprises semiconductor element, a radiating seat, a substrate and an adhesion coating at least.This semiconductor element be electrically connect to this substrate and hot link to this radiating seat.This radiating seat comprises a projection and a pedestal at least.This projection extends upward and enters an opening of this adhesion coating and a through hole of this substrate from this pedestal, and this pedestal then extends laterally from this projection.This adhesion coating extends between this projection and this substrate and between this pedestal and this substrate.This group body can provide the signal route between a weld pad and a terminal.
According to a pattern of the present invention, semiconductor wafer group body comprises semiconductor element, an adhesion coating, a radiating seat, a substrate and a terminal at least.This adhesion coating has an opening at least.This radiating seat comprises a projection and a pedestal at least, wherein this projection is to extend this pedestal top in abutting connection with this pedestal and along a upward direction, this pedestal then extends this projection below along a downward direction opposite with this upward direction, and along extending laterally from this projection perpendicular to this side surface direction that upwards reaches downward direction.This substrate comprises a weld pad and a dielectric layer at least, and a through hole extends through this substrate.
This semiconductor element is to be positioned at this projection top and to be overlapped in this projection.This semiconductor element be electrically connect to this weld pad, thereby electrically connect is to this terminal; And hot link is to this projection, thereby hot link is to this pedestal.
This adhesion coating is to be arranged on this pedestal, extends this pedestal top, stretches into a breach that is positioned between this projection and this substrate in this through hole, and extend across this dielectric layer in this breach.This adhesion coating extends laterally to this terminal or crosses this terminal from this projection, and is between between this projection and this dielectric layer and between this pedestal and this substrate.
This substrate is to be arranged on this adhesion coating and to extend this pedestal top.
This projection extends into this opening and this through hole, and this pedestal then extends this semiconductor element, this adhesion coating and this substrate below.
This radiating seat can comprise a lid, and this lid is the over top that is positioned at this projection, in abutting connection with the top of this projection, cover simultaneously the top of this projection from the top, and the top side along described side surface direction from this projection is to extending.For example, this lid can be rectangle or square, and the top of this projection can be circle.In this example, the size of this lid and shape can be through designs, cooperating the thermo-contact surface of this semiconductor element, then do not design according to the thermo-contact surface of this semiconductor element as for size and the shape at this projection top.This lid also can contact and cover this adhesion coating one in abutting connection with this projection and with the coplanar part of this projection.This lid also can be above this dielectric layer and this weld pad and/or this terminal copline.In addition, but this this pedestal of projection hot link and this lid.This radiating seat can be comprised of this projection and this pedestal, or is comprised of this projection, this pedestal and this lid.This radiating seat also can be comprised of copper, aluminium or copper/nickel/aluminium alloy.No matter adopt arbitrary building form, this radiating seat all can provide thermolysis, and the heat energy of this semiconductor element is diffused to lower one deck group body.
This semiconductor element can be arranged on this radiating seat.For example, this semiconductor element can be arranged on this radiating seat and this substrate, is overlapped in this projection and this weld pad, by one first scolding tin electrically connect to this weld pad, and by one second scolding tin hot link to this radiating seat.Perhaps, this semiconductor element can be arranged at this radiating seat but not on this substrate, be overlapped in this projection but not this substrate, by a routing electrically connect to this weld pad, and by a die bond material hot link to this radiating seat.
This semiconductor element can be the semiconductor wafer once encapsulation or un-encapsulated.For example, this semiconductor element can be a LED packaging body that comprises the LED wafer, and it is to be arranged on this radiating seat and this substrate, is overlapped in this projection and this weld pad, via one first scolding tin electrically connect to this weld pad, and via one second scolding tin hot link to this radiating seat.Perhaps, this semiconductor element can be semiconductor wafer, and it is to be arranged at this radiating seat but not on this substrate, to be overlapped in this projection but not this substrate, via a routing electrically connect to this weld pad, and via a die bond material hot link to this radiating seat.
This adhesion coating can contact this projection and this dielectric layer in this breach, and contacts this pedestal and this dielectric layer outside this breach.This adhesion coating also can cover from the below this substrate, and covers and around this projection in described side surface direction, covers simultaneously this pedestal from the top and is positioned at part outside this projection.But this adhesion coating also similar shape is coated on the sidewall of this projection and this pedestal is positioned at the outer end face of this projection.This adhesion coating also can with a top copline of this projection.This adhesion coating also can fill up the space between this projection and this dielectric layer, and fills up the space between this pedestal and this substrate, and this adhesion coating is restricted in the space between this radiating seat and this substrate.
This adhesion coating can extend laterally to this terminal or cross this terminal from this projection.For example, this adhesion coating and this terminal may extend to the peripheral edge of this group body; In this example, this adhesion coating is to extend laterally to this terminal from this projection.Perhaps, this adhesion coating may extend to the peripheral edge of this group body, and this terminal is then kept at a distance with the peripheral edge of this group body; In the case, this adhesion coating is to extend laterally and cross this terminal from this projection.
This adhesion coating can be overlapped in this terminal or overlapping by this terminal.For example, this terminal is extensible to be overlapped in this dielectric layer and this adhesion coating in this dielectric layer and this adhesion coating top, simultaneously with this weld pad and this lid copline; In this example, this adhesion coating is overlapping by this terminal, and this group body then provides the horizontal signal route between this weld pad and this terminal.Perhaps, this terminal is extensible in this dielectric layer and this adhesion coating below, and overlapping by this dielectric layer and this adhesion coating, simultaneously with this pedestal copline; In the case, this adhesion coating is to be overlapped in this terminal, and this group body then provides the vertical signal route between this weld pad and this terminal.
This projection can be integrally formed with this pedestal.For example, this projection and this pedestal can be single metallic object or comprise single metallic object in its interface, and wherein this single metallic object can be copper.This projection is extensible this through hole that runs through also.This projection also can be above this dielectric layer and this adhesion coating copline.This projection also can be flat-top cone cylindricality, and its diameter is upwards to successively decrease from the flat top of this pedestal towards it in abutting connection with this lid.
This pedestal can cover from the below this semiconductor element, this projection, this lid, this adhesion coating and this substrate, supports simultaneously this substrate, and extends to the peripheral edge of this group body.
This substrate can be kept at a distance with this projection and this pedestal.This substrate also can be a laminar structure.This substrate also can comprise single conductive layer or most conductive layers.For example, this substrate can comprise single conductive layer, and it contacts this dielectric layer and extends this dielectric layer top.In this example, this conductive layer comprises this weld pad and this terminal.Thus, this substrate just comprises this terminal, and this adhesion coating is overlapping by this terminal, then betides this dielectric layer top and does not pass this dielectric layer as for the signal route between this weld pad and this terminal.Perhaps, this substrate can comprise: one first conductive layer, and it contacts this dielectric layer and extends this dielectric layer top; One second conductive layer, it contacts this dielectric layer and extends this dielectric layer below; And a conductive hole, it extends through this dielectric layer and the described conductive layer of electrically connect.In the case, this first conductive layer comprises this weld pad.In addition, (1) this first conductive layer comprises this terminal, and this substrate comprises another conductive hole, and it extends through this dielectric layer and the described conductive layer of electrically connect; In the case, this substrate comprises this terminal, and this adhesion coating is overlapping by this terminal, and the signal route between this weld pad and this terminal is to pass this dielectric layer but do not pass this adhesion coating; Perhaps (2) this terminal is to be positioned at this adhesion coating and this substrate below, and this group body comprises another conductive hole, and it extends through this adhesion coating and this terminal of electrically connect and this second conductive layer; In the case, this substrate does not comprise this terminal, and this adhesion coating is to be overlapped in this terminal, and the signal route between this weld pad and this terminal is to pass this dielectric layer and this adhesion coating.In above-mentioned arbitrary situation, this substrate all comprises this weld pad, and the part or all of signal route between this weld pad and this terminal is provided.
This weld pad can be used as an electric contact of this semiconductor element, and this terminal can be used as an electric contact of lower one deck group body, and this weld pad and this terminal can provide the signal route between this semiconductor element and this time one deck group body.
This group body can be a first order or second level monocrystalline or polycrystalline device.For example, this group body can be a first order packaging body that comprises single wafer or a plurality of wafers.Perhaps, this group body can be a second level module that comprises single LED packaging body or a plurality of LED packaging bodies, and wherein respectively this LED packaging body can comprise single LED wafer or a plurality of LED wafer.
The invention provides a kind of method of making semiconductor wafer group body, it comprises: a projection and a pedestal are provided; One adhesion coating is set on this pedestal, this step comprises an opening that this projection is inserted this adhesion coating; One substrate is set on this adhesion coating, this step comprises a through hole that this projection is inserted this substrate, thereby forms a breach between between this projection and this substrate in this through hole; Make this adhesion coating upwards flow into this breach; Solidify this adhesion coating; Semiconductor element is set on a radiating seat, wherein this radiating seat comprises this projection and this pedestal at least; This semiconductor element of electrically connect is to this substrate; And this semiconductor element of hot link is to this radiating seat.
According to a pattern of the present invention, a kind of method of making semiconductor wafer group body comprises: (1) provides a projection, one pedestal, one adhesion coating and a substrate, wherein (A) this substrate comprises a conductive layer and a dielectric layer at least, (B) this projection is in abutting connection with this pedestal, extend this pedestal top along a upward direction, extend through an opening of this adhesion coating, and extend into a through hole of this substrate, (C) this pedestal extends this projection below along a downward direction opposite with this upward direction, and along extending laterally from this projection perpendicular to this side surface direction that upwards reaches downward direction, (D) this adhesion coating is to be arranged on this pedestal, extend this pedestal top, and between this pedestal and this substrate, and uncured, (E) this substrate is to be arranged on this adhesion coating, and extends this adhesion coating top, this conductive layer then extends this dielectric layer top, and (F) breach is in this through hole and between this projection and this substrate; (2) make this adhesion coating upwards flow into this breach; (3) solidify this adhesion coating; (4) semiconductor element being set comprises on the radiating seat of this projection and this pedestal at least in one, wherein this semiconductor element is overlapped in this projection, one wire comprises a selected part of a weld pad, a terminal and this conductive layer, and this weld pad is that electrically connect is to this terminal; (5) this semiconductor element of electrically connect is to this weld pad, and this semiconductor element of electrically connect is to this terminal whereby; And this semiconductor element of (6) hot link is to this projection, and this semiconductor element of hot link is to this pedestal whereby.
According to another pattern of the present invention, a kind of method of making semiconductor wafer group body comprises: (1) provides a projection and a pedestal, wherein this projection is adjacency and is integrally formed in this pedestal, and extend this pedestal top along a upward direction, and this pedestal is to extend this projection below along a downward direction opposite with this upward direction, and extends laterally along the side surface direction that reaches downward direction that makes progress perpendicular to this from this projection; (2) provide an adhesion coating, wherein an opening extends through this adhesion coating; (3) provide a substrate, this substrate comprises a conductive layer and a dielectric layer at least, and wherein a through hole extends through this substrate; (4) this adhesion coating is set on this pedestal, this step comprises inserts this opening with this projection, and wherein this adhesion coating is to extend this pedestal top, and this projection extends through this opening; (5) this substrate is set on this adhesion coating, this step comprises inserts this through hole with this projection, wherein this substrate is to extend this adhesion coating top, this conductive layer is to extend this dielectric layer top, this projection extends through this opening and enters this through hole, this adhesion coating is between this pedestal and this substrate and uncured, and a breach is in this through hole and between this projection and this substrate; (6) this adhesion coating of heat fused; (7) make this pedestal and the each other closing of this substrate, make whereby this projection upwards mobile in this through hole, and the fusing adhesion coating between this pedestal and this substrate exerted pressure, this pressure forces this fusing adhesion coating upwards to flow into this breach, and this projection and this fusing adhesion coating then extend this dielectric layer top; (8) this fusing adhesion coating that is heating and curing is adhered to this substrate with this projection and this pedestal mechanicalness whereby; (9) semiconductor element is set on a radiating seat, this radiating seat comprises this projection and this pedestal at least, wherein this semiconductor element is overlapped in this projection, and a wire comprises a selected part of a weld pad, a terminal and this conductive layer, and this weld pad is that electrically connect is to this terminal; (10) this semiconductor element of electrically connect is to this weld pad, and this semiconductor element of electrically connect is to this terminal whereby; And this semiconductor element of (11) hot link is to this projection, and this semiconductor element of hot link is to this pedestal whereby.
Provide this projection and this pedestal to comprise: a metallic plate is provided; At the etchant resistive layer of this metallic plate formation one patterning, its selectivity exposes this metallic plate to the open air; This metallic plate of etching, the defined pattern of the etchant resistive layer that makes it form this patterning forms a groove at this metallic plate whereby, and it extends into but does not run through this metallic plate; Then remove the etchant resistive layer of this patterning, wherein this projection comprises one of this metallic plate and is not subjected to etching part, this is not subjected to etching part to protrude from this pedestal top, and by this groove side to around, this pedestal also comprises one of this metallic plate and is not subjected to etching part, and this is not subjected to etching part to be positioned at this projection and this groove below.
Provide this adhesion coating to comprise: the film that a uncured epoxy resin is provided.This adhesion coating is flowed can be comprised: melt this uncured epoxy resin; And push this uncured epoxy resin between this pedestal and this substrate.Solidifying this adhesion coating can comprise: the uncured epoxy resin that solidifies this fusing.
Provide this radiating seat to comprise: after solidifying this adhesion coating with this semiconductor element is set before, provide a lid at this projection, this lid is positioned at an over top of this projection, top in abutting connection with this projection, cover simultaneously the top of this projection from the top, and extend laterally along described side surface direction from this projection top.
Provide this weld pad to comprise: after solidifying this adhesion coating, to remove the selected part of this conductive layer.
Provide this weld pad also can comprise: after solidifying this adhesion coating, to grind this projection, this adhesion coating and this conductive layer, so that this projection, this adhesion coating and this conductive layer are that side direction flushes each other at a uper side surface towards this upward direction; Then remove the selected part of this conductive layer, so that this weld pad comprises the selected part of this conductive layer.Described grinding can comprise: grind this adhesion coating and do not grind this projection; Then grind this projection, this adhesion coating and this conductive layer.Described removal can comprise: utilize the pattern etched resistance layer of this weld pad of definable that this conductive layer is carried out wet chemical etch.
Provide this weld pad also can comprise: after grinding was finished, conductive metal deposition was to form one second conductive layer on this projection, this adhesion coating and this conductive layer; Then remove the selected part of those conductive layers, so that this weld pad comprises the selected part of those conductive layers.Conductive metal deposition can comprise to form this second conductive layer: one first coating is located on this projection, this adhesion coating and this conductive layer in the mode of electroless plating coating; Then one second coating is located on this first coating with plating mode.Described removal can comprise: utilize the pattern etched resistance layer of this weld pad of definable that those conductive layers are carried out wet chemical etch.
Provide this terminal to comprise: after solidifying this adhesion coating, to remove the selected part of this conductive layer.Provide this terminal also can comprise: to finish first aforementioned grinding, then utilize the pattern etched resistance layer of this terminal of definable to remove the selected part of this conductive layer, so that this terminal comprises the selected part of this conductive layer.Provide this terminal also can comprise: to finish first aforementioned grinding, then utilize the pattern etched resistance layer of this terminal of definable to remove the selected part of those conductive layers, so that this terminal comprises the selected part of those conductive layers.So a branch of, this weld pad and this terminal just can pass through same grinding step, and utilize same pattern etched resistance layer to form simultaneously in same wet chemical etch step.
Provide this lid to comprise: the selected part of removing this second conductive layer.Provide this lid also can comprise: to finish first aforementioned grinding, then utilize the pattern etched resistance layer of this lid of definable to remove the selected part of this second conductive layer, so that this lid comprises the selected part of this second conductive layer.Thus, this weld pad and this lid just can pass through same grinding step, and utilize same pattern etched resistance layer to form simultaneously in same wet chemical etch step.Similarly, this weld pad, this terminal and this lid also can pass through same grinding step, and utilize same pattern etched resistance layer to form simultaneously in same wet chemical etch step.
This adhesion coating is flowed can be comprised: fill up this breach with this adhesion coating.This adhesion coating is flowed also can be comprised: push this adhesion coating, make it pass through this breach, arrive this projection and this substrate top, and reach the part in this projection end face and this substrate top surface in abutting connection with this breach.
Solidifying this adhesion coating can comprise: should protruding osmanthus and this pedestal mechanicalness be incorporated into this substrate.
This semiconductor element is set can be comprised: this semiconductor element is arranged on this lid.This semiconductor element is set also can be comprised: this semiconductor element is arranged at this projection, this lid, this opening and this through hole top, and makes this semiconductor element be overlapped in this projection, this lid, this opening and this through hole.
This semiconductor element is set can be comprised: one first scolding tin and one second scolding tin are provided, and wherein this first scolding tin comprises between the LED packaging body and this weld pad of LED wafer one, and this second scolding tin is between this LED packaging body and this lid.This semiconductor element of electrically connect can comprise: this first scolding tin is provided between this LED packaging body and this weld pad.This semiconductor element of hot link can comprise: this second scolding tin is provided between this LED packaging body and this lid.
This semiconductor element is set can be comprised: a die bond material is provided between semiconductor wafer and this lid.This semiconductor element of electrically connect can comprise: provide a routing between this wafer and this weld pad.This semiconductor element of hot link can comprise: this die bond material is provided between this wafer and this lid.
This adhesion coating can contact this projection, this pedestal, this lid and this dielectric layer, cover this substrate from the below, cover and around this projection in described side surface direction, and extend to this group system make finish after with organize bodies with series-produced other and separate formed peripheral edge.
Make when this group system and to finish and with after bodies separate with series-produced other groups, this pedestal can cover from the below this semiconductor element, this projection, this lid, this substrate and this adhesion coating, supports simultaneously this substrate, and extends to the peripheral edge of this group body.
The present invention has multiple advantages.This radiating seat can provide excellent radiating effect, and makes heat energy this adhesion coating of not flowing through.Therefore, this adhesion coating can be the low-cost dielectric of low heat conductivity and is difficult for delamination.This projection and this pedestal can be integrally formed to improve reliability.This lid can be this semiconductor element custom-made by size to promote connected hot effect.This adhesion coating can between between this projection and this substrate and between this pedestal and this substrate, link so as to firm mechanicalness is provided between this radiating seat and this substrate.This substrate can have simple circuit pattern so that individual layer signal route to be provided, or has complicated circuit pattern to realize the flexible multilayer signal route of tool.This wire can provide the horizontal signal route between this weld pad above this dielectric layer and this terminal, perhaps provide the vertical signal route between this weld pad above this dielectric layer and this terminal below this adhesion coating.This pedestal can be this substrate mechanical support is provided, and prevents its flexural deformation.This group body can utilize the low temperature process manufacturing, not only reduces stress, also improves reliability.The height control operation that this group body also can utilize circuit board, lead frame and coil type Substrate manufacture factory to implement is easily made.
Above-mentioned and other feature ﹠ benefits of the present invention will further be illustrated by various embodiment below.
Description of drawings
Below in conjunction with drawings and Examples a preferred embodiment of the present invention is elaborated:
Fig. 1 to Fig. 4 is cutaway view, illustrates in one embodiment of the invention in order to make the method for a projection and a pedestal.
Fig. 5 and Fig. 6 are respectively vertical view and the upward view of Fig. 4.
Fig. 7 and Fig. 8 are cutaway view, illustrate in one embodiment of the invention in order to make the method for an adhesion coating.
Fig. 9 and Figure 10 are respectively vertical view and the upward view of Fig. 8.
Figure 11 and Figure 12 are cutaway view, illustrate in one embodiment of the invention in order to make the method for a substrate.
Figure 13 and Figure 14 are respectively vertical view and the upward view of Figure 12.
Figure 15 to Figure 26 is cutaway view, illustrates in one embodiment of the invention that in order to make the method for a heat-conducting plate, this heat-conducting plate can provide the horizontal signal route.
Figure 27 and Figure 28 are respectively vertical view and the upward view of Figure 26.
Figure 29, Figure 30 and Figure 31 are respectively cutaway view, vertical view and the upward view of a heat-conducting plate in one embodiment of the invention, and this heat-conducting plate can provide the vertical signal route.
Figure 32, Figure 33 and Figure 34 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and this semiconductor wafer group body comprises the LED packaging body that this heat-conducting plate with horizontal signal route and one has back contact.
Figure 35, Figure 36 and Figure 37 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and this semiconductor wafer group body comprises the LED packaging body that this heat-conducting plate with horizontal signal route and one has the side pin.
Figure 38, Figure 39 and Figure 40 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and this semiconductor wafer group body comprises this heat-conducting plate with horizontal signal route and semiconductor wafer.
Figure 41, Figure 42 and Figure 43 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and this semiconductor wafer group body comprises this heat-conducting plate with vertical signal route and semiconductor wafer.
Figure 44, Figure 45 and Figure 46 are respectively cutaway view, vertical view and the upward view of a light source time group body in one embodiment of the invention, and this light source time group body comprises Figure 32 to semiconductor wafer group body and a heat abstractor shown in Figure 34.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to the radiating seat with projection/pedestal of foundation the present invention proposition and its embodiment of semiconductor wafer group body, structure, feature and the effect thereof of substrate, be described in detail as follows.
Fig. 1 to Fig. 4 is cutaway view, illustrates a kind of method of making a projection and a pedestal in one embodiment of the invention, and Fig. 5 and Fig. 6 are respectively vertical view and the upward view of Fig. 4.
Fig. 1 is the cutaway view of metallic plate 10, and metallic plate 10 comprises opposing main surperficial 12 and 14.Illustrated metallic plate 10 is that a thickness is 500 microns copper coin.The advantages such as copper has the thermal conductivity height, associativity is good and low-cost.Metallic plate 10 can be made by various metals, such as copper, aluminium, iron-nickel alloy, iron, nickel, silver, gold, its mixture and alloy thereof.
Fig. 2 is a cutaway view, shows the etchant resistive layer 16 and the etchant resistive layer 18 that comprehensively covers that are formed with a patterning on the metallic plate 10.The etchant resistive layer 16 of illustrated patterning is the photoresist layers that are deposited on the metallic plate 10 with the etchant resistive layer 18 that covers comprehensively, and its production method is to utilize compression molding techniques simultaneously photoresist layer to be pressed on respectively surface 12 and 14 with hot roller.Moist spin-coating method and pouring curtain rubbing method also form technology for applicable photoresistance.One light shield (not shown) is connivent in photoresist layer, then according to prior art, makes the light selectivity by light shield, make the photoresistance that is subjected to light partly become and to dissolve; Remove with developer solution more afterwards and be not subjected to light and soluble photoresistance part still, make photoresist layer 16 form patterns.Therefore, photoresist layer 16 has the pattern of an alternative exposed surface 12, and photoresist layer 18 is pattern-free and covering surfaces 14 then.
Fig. 3 is a cutaway view, shows that metallic plate 10 is formed with one and is dug into but the groove 20 of penetrating metal plate 10 not.Groove 20 is that the mode with etching metal plate 10 forms, so that the etchant resistive layer 16 defined patterns that metallic plate 10 forms by patterning.Graphic etching mode is positive wet chemical etch.For example, structure can be reversed, make the etchant resistive layer 16 of patterning down, and the etchant resistive layer 18 that comprehensively covers up, then utilize one and chemical etching liquor is sprayed to the etchant resistive layer 16 of metallic plate 10 and patterning towards the bottom nozzle (not shown) of patterning etchant resistive layer 16 up, at the same time, a top jet nozzle (not shown) towards the etchant resistive layer 18 of comprehensive covering then will not start, and just can remove etched accessory substance by gravity thus.Perhaps, utilize the etchant resistive layer 18 that comprehensively covers that back-protective is provided, also structure can be immersed in the chemical etching liquor to form groove 20.Described chemical etching liquor has the height specific aim to copper, and can be carved into metallic plate 10 and reach 300 microns.Therefore, groove 20 extends into from surface 12 but penetrating metal plate 10 not, and with 200 microns of surface 14 distances, the degree of depth then is 300 microns.Chemical etching liquor also causes side direction to be etched into to the metallic plate 10 of etchant resistive layer 16 belows of patterning.Applicable chemical etching liquor can be the solution that contains alkali ammonia or the dilution mixture of nitric acid and hydrochloric acid.In other words, described chemical etching liquor can be acidity or alkalescence.The desirable etching period that is enough to form groove 20 and does not cause metallic plate 10 excessively to be exposed to chemical etching liquor can be determined by trial and error pricing.
Fig. 4, Fig. 5 and Fig. 6 are respectively cutaway view, vertical view and the upward view of the metallic plate 10 after the etchant resistive layer 16 of removing patterning and the etchant resistive layer 18 that comprehensively covers, and the solvent processing of wherein said photoresist layer is removed.For example, to can be PH be 14 strong basicity potassium hydroxide solution to solvent for use.
Therefore comprise projection 22 and pedestal 24 through etched metallic plate 10.
Fig. 7 and Fig. 8 are cutaway view, and a kind of method of making adhesion coating in one embodiment of the invention is described.Fig. 9 and Figure 10 are respectively vertical view and the upward view of drawing according to the 8th figure.
Fig. 7 is the cutaway view of adhesion coating 26, and wherein adhesion coating 26 is the film of the uncured epoxy resin in second rank (B-STAGE), and it is a uncured and patternless lamellar body, thick 180 microns.
Fig. 8, Fig. 9 and Figure 10 are respectively cutaway view, vertical view and the upward view of the adhesion coating 26 with opening 28.Opening 28 is one to penetrate the center window of adhesion coating 26.Opening 28 therefore mechanical system bores saturating this film and forms, and its diameter is 1150 microns.Opening 28 also can utilize other technologies to make, such as punching out and punching press etc.
Figure 11 and Figure 12 are cutaway view, and a kind of method of making substrate in one embodiment of the invention is described, Figure 13 and Figure 14 then are respectively vertical view and the upward view of drawing according to Figure 12.
Figure 11 is the cutaway view of substrate 30, and substrate 30 comprises conductive layer 32 and dielectric layer 34.Conductive layer 32 is electrical conductor, and its contact dielectric layer 34 also extends its top.34 of dielectric layers are the body that is electrically insulated.For example, conductive layer 32 is 30 micron thickness and patternless copper coin, and dielectric layer 34 is the epoxy resin of 150 micron thickness.
Figure 12, Figure 13 and Figure 14 are respectively cutaway view, vertical view and the upward view of the substrate 30 with through hole 36.Through hole 36 is one to penetrate the center window of substrate 30.The generation type of through hole 36 is that conductive layer 32 and dielectric layer 34 are mechanically bored thoroughly.The diameter of through hole 36 is 1150 microns.Through hole 36 can also other technologies form for example punching out and punching press.The preferably, opening 28 has same diameter with through hole 36, and is to form by same way as on same rig floor with identical drill bit.
It is a laminar structure that substrate 30 illustrates at this, but substrate 30 also can be other bodies that is electrical connected, such as ceramic wafer or printed circuit board (PCB).Similarly, substrate 30 can comprise the layer body of most embedded circuit in addition.
Figure 15 to Figure 26 is cutaway view, illustrate that a kind of making has the method for the heat-conducting plate of horizontal signal route in one embodiment of the invention, this heat-conducting plate comprises projection 22, pedestal 24, adhesion coating 26 and substrate 30, and Figure 27 and Figure 28 then are respectively vertical view and the upward view of Figure 26.
Figure 23 is that adhesion coating 26 is arranged at the cutaway view on the pedestal 24.Adhesion coating 26 is to drop on the pedestal 24, projection 22 is upwards inserted and runs through opening 28, and adhesion coating 26 then contacts and be positioned pedestal 24.The preferably, projection 22 insert and run through opening 28 after be to aim at opening 28 and be positioned at the middle position of opening 28 and do not contact adhesion coating 26.
In structure shown in Figure 16, substrate 30 is to be arranged on the adhesion coating 26.Substrate 30 is to drop on the adhesion coating 26, makes projection 22 upwards insert through hole 36, and substrate 30 then contacts and be positioned adhesion coating 26.The preferably, projection 22 is aligned through holes 36 and the middle position that is positioned at through hole 36 and contact substrate 30 not after inserting (but not running through) through hole 36.Therefore, breach 38 is in through hole 36 and between projection 22 and substrate 30.Breach 38 lateral rings are around projection 22, simultaneously by substrate 30 flanked.In addition, opening 28 and through hole 36 are mutually to align and have same diameter.
At this moment, substrate 30 is to be placed on the adhesion coating 26 and with it contact, and extends adhesion coating 26 tops.Projection 22 extends through opening 28, enters through hole 36, and arrives dielectric layer 34.Projection 22 hangs down 60 microns than the end face of conductive layer 32, and exposes towards a upward direction via through hole 36.Adhesion coating 26 contact pedestals 24 with substrate 30 and between this between the two.Adhesion coating 26 contacts dielectric layers 34 but keeps at a distance with conductive layer 32.In this stage, adhesion coating 26 still is the film of the uncured epoxy resin in second rank (B-STAGE), then is air in the breach 38.
Figure 17 illustrates adhesion coating 26 and flows in the breach 38 after the heating pressurization.In this figure, the method that forces adhesion coating 26 to flow into breach 38 is that conductive layer 32 is imposed downward pressure and/or pedestal 24 is imposed upward pressure, also is about to pedestal 24 and substrate 30 relative pressings, so as to adhesion coating 26 is exerted pressure; At the same time also to adhesion coating 26 heating.Adhesion coating 26 after being heated can be shaped arbitrarily under pressure.Therefore, after the adhesion coating 26 that is positioned at 30 of pedestal 24 and substrates is squeezed, changes its original-shape and upwards flow into breach 38.Pedestal 24 continues towards each other pressing, until adhesion coating 26 fills up breach 38 with substrate 30.In addition, after the gap of 30 of pedestal 24 and substrates dwindled, adhesion coating 26 still filled up in this gap that dwindles.
For example, pedestal 24 and conductive layer 32 can be arranged at the upper and lower of a pressing machine presents a theatrical performance as the last item on a programme between the (not shown).In addition, an overhead gage and upper buffering paper (not shown) can be folded between conductive layer 32 and the upper holder, and a lower baffle plate and lower buffering paper (not shown) are folded between pedestal 24 and the bottom platen.Be followed successively by from top to bottom upper holder, overhead gage, upper buffering paper, substrate 30, adhesion coating 26, pedestal 24, lower buffering paper, lower baffle plate and bottom platen with this superimposed body that consists of.In addition, can utilize the instrument pin (not shown) that extends upward and pass pedestal 24 registration holes (not shown) from bottom platen that this superimposed body is positioned on the bottom platen.
Then with the upper and lower heating and mutually advancing of presenting a theatrical performance as the last item on a programme, whereby to adhesion coating 26 heating and exert pressure.Baffle plate can disperse the heat of presenting a theatrical performance as the last item on a programme, and even makes heat be uniformly applied to pedestal 24 and substrate 30 adhesion coatings 26.Buffering paper then disperses the pressure of presenting a theatrical performance as the last item on a programme, and even makes pressure be uniformly applied to pedestal 24 and substrate 30 adhesion coatings 26.Originally, dielectric layer 34 contacts and is pressed on adhesion coating 26.Along with perseveration and the continuous heating of presenting a theatrical performance as the last item on a programme, the adhesion coating 26 that pedestal 24 and substrate are 30 is squeezed and begins fusing, thereby upwards flows into breach 38, by dielectric layer 34, arrives at last conductive layer 32.For example, uncured epoxy resin clamp-oned in the breach 38 by pressure, but reinforcement material and filler is still stayed between pedestal 24 and the substrate 30 after meeting heat fusing.Adhesion coating 26 in the speed of through hole 36 interior risings greater than projection 22, eventually to filling up breach 38.Adhesion coating 26 also rises to the position of a little higher than breach 38, and present a theatrical performance as the last item on a programme stop action before, overflow to the end face of projection 22 end faces and conductive layer 32 in abutting connection with breach 38 places.If film thickness is slightly larger than actual required this situation that just may occur.Thus, adhesion coating 26 just forms one at projection 22 end faces and covers thin layer.Presenting a theatrical performance as the last item on a programme stops action after touching projection 22, but still continues adhesion coating 26 heating.
For example, presenting a theatrical performance as the last item on a programme stops still to continue clamping projection 22 and pedestal 24 and heat supplies after mobile, and second rank (B-STAGE) epoxy resin that will melt whereby is converted to that solidify on the third rank (C-STAGE) or the epoxy resin of sclerosis.Therefore, epoxy resin is to solidify in the mode of similar existing Multi-layer force fit.Behind the epoxy resin cure, the separation of presenting a theatrical performance as the last item on a programme is in order to take out structure from the machine of presenting a theatrical performance as the last item on a programme.
Mechanicalness links the adhesion coating 26 that solidifies providing firmly between projection 22 and the substrate 30 and between pedestal 24 and the substrate 30.Adhesion coating 26 can bear general operation pressure and unlikely distortion damage, then only temporary transient distortion when meeting excessive pressure.Moreover adhesion coating 26 can absorb between projection 22 and the substrate 30 and the thermal expansion between pedestal 24 and the substrate 30 is not mated.
In this stage, projection 22 and conductive layer 32 be copline roughly, and adhesion coating 26 and conductive layer 32 then extend to an end face that faces this upward direction.For example, adhesion coating that pedestal 24 and dielectric layer are 34 26 thick 120 microns reduces 60 microns than 180 microns of its original depths; Projection 22 raises 60 microns in through hole 36, and substrate 30 then descends 60 microns with respect to projection 22.300 microns combination height that basically are equal to conductive layer 32 (30 microns), dielectric layer 34 (150 microns) and below adhesion coating 26 (120 microns) of projection 22 height.In addition, projection 22 still is positioned at opening 28 keeps at a distance with the middle position of through hole 36 and with substrate 30, and 26 of adhesion coatings fill up the space of 30 of pedestal 24 and substrates and fill up breach 38.For example, breach 38 (and projection 22 and substrate 30 adhesion coating 26) is in projection 22 end face places wide 75 microns ((1150-1000)/2).Adhesion coating 26 extends across dielectric layer 34 in breach 38.In other words, the adhesion coating 26 in the breach 38 is dielectric layer 34 thickness along this upward direction and downward direction extension and leap breach 38 lateral walls.Adhesion coating 26 also comprises the thin top of breach 38 tops and divides, and its contact projection 22 extends 10 microns with the end face of conductive layer 32 and above projection 22.
In structure shown in Figure 19, remove all at the top of projection 22, adhesion coating 26 and conductive layer 32.
The top of projection 22, adhesion coating 26 and conductive layer 32 is to remove with lapping mode, the top of for example processing structure with rotation diamond wheel and distilled water.Originally, diamond wheel only grinds off adhesion coating 26.Continue to grind, then adhesion coating 26 is moved down attenuation because grinding the surface.Diamond wheel contacts projection 22 and conductive layer 32 (simultaneously uninevitable) at last, thereby begins to grind projection 22 and conductive layer 32.After continuing to grind, projection 22, adhesion coating 26 and conductive layer 32 are all moved down attenuation because grinding the surface.Grinding continues to removes till the desired thickness.Afterwards, remove dirt with the distilled water flushing structure.
Above-mentioned grinding steps grinds off 25 microns with the top of adhesion coating 26, the top of projection 22 is ground off 15 microns, and the top of conductive layer 32 is ground off 15 microns.Thickness reduces the impact of projection 22 or adhesion coating 26 and not obvious, but makes the thickness of conductive layer 32 significantly be reduced to 15 microns from 30 microns.
So far, projection 22, adhesion coating 26 and conductive layer 32 are to be co-located on the level and smooth splicing side end face that dielectric layer 34 tops one face this upward direction.
Structure shown in Figure 20 has conductive layer 40, and it is deposited on projection 22, adhesion coating 26 and the conductive layer 32.
The upper and lower surface of structure shown in Figure 21 is respectively equipped with the etchant resistive layer 42 and the etchant resistive layer 44 that comprehensively covers of patterning.Illustrated pattern etched resistance layer 42 is the photoresist layers that are similar to respectively photoresist layer 16 and 18 with the etchant resistive layer 44 that covers comprehensively.The alternative that is provided with photoresist layer 42 exposes the pattern of conductive layer 40 to the open air, and photoresist layer 44 is pattern-free and covering pedestal 24 then.
In structure shown in Figure 22, conductive layer 32 and 40 is removed the etchant resistive layer 42 defined patterns of its selected part to form patterning by etching.Described etching is similar with the positive wet chemical etch that is applied to metallic plate 10.The chemical etching liquor etching penetrates conductive layer 32 and 40 exposing adhesion coating 26 and dielectric layer 34 to the open air, thereby patternless conductive layer 32 and 40 is converted to patterned layer originally, does not form pattern as for 24 of pedestals.
In Figure 23, the pattern etched resistance layer 42 on the structure is all removed with the etchant resistive layer 44 that covers comprehensively.The mode of removing photoresist layer 42 and 44 can be identical with the mode of removing photoresist layer 16 and 18.
Radiating seat 56 comprises projection 22, pedestal 24 and lid 52.Projection 22 is integrally formed with pedestal 24.Lid 52 is positioned at the over top of projection 22, in abutting connection with the top of projection 22, covers simultaneously the top of projection 22 from the top, and extends laterally by the top of projection 22 is past.After lid 52 was set, projection 22 was the middle sections that are seated in lid 52 circumference.Lid 52 is also from top contact and cover the part of its below adhesion coating 26, and this part of adhesion coating 26 is and projection 22 coplines, in abutting connection with projection 22, and flanked projection 22 simultaneously.
Radiating seat 56 is essentially the radiating block of an inverted T-shaped, and it comprises post section (projection 22), alar part (part that pedestal 24 extends laterally from post section) and a heat conductive pad (lid 52).
The construction dielectric layer 34 of Figure 24, conductive layer 40 and lid 52 are provided with anti-welding green lacquer 58.
Anti-welding green lacquer 58 is an electrical insulation layer, and it can form according to our selection pattern exposing weld pad 46, terminal 50 and lid 52 to the open air, and covers exposed parts and the route line 48 of adhesion coating 26 and dielectric layer 34 from the top.The thickness of anti-welding green lacquer 58 above weld pad 46 and terminal 50 is 25 microns, and anti-welding green lacquer 58 extends 55 microns (30+25) in dielectric layer 34 tops.
Anti-welding green lacquer 58 is originally for coating a light display on the structure as the type liquid resin.Form pattern at anti-welding green lacquer 58 more afterwards, its practice is to make the light selectivity by the light shield (not shown), make the anti-welding green lacquer 58 of the part that is subjected to light become and to dissolve, then utilize a developing solution to remove not to be subjected to light and the anti-welding green lacquer 58 of soluble part still, firmly bake at last, above step is existing skill again.
The pedestal 24 of structure shown in Figure 25, weld pad 46, terminal 50 are provided with coating contact 60 with lid 52.
Have all advantage as pedestal 24, weld pad 46, terminal 50 with the surface treatment of lid 52 with coating contact 60.Inner nickel dam provides main mechanicalness and electrically connect and/or hot link, and surface gold layer then provides a wettable surface in order to the scolder reflow.Coating contact 60 also protects pedestal 24, weld pad 46, terminal 50 not to be corroded with lid 52.Coating contact 60 can comprise various metals to meet the outside needs that link medium.For example, one overlayed on silver layer on the nickel dam can arrange in pairs or groups scolding tin or routing.
For ease of explanation, the pedestal 24, weld pad 46, the terminal 50 that are provided with coating contact 60 all show in simple layer body mode with lid 52.The boundary line (not shown) that coating contact 60 and pedestal 24, weld pad 46, terminal 50 and lid are 52 is copper/nickel interface.
So far finish the making of heat-conducting plate 62.
Figure 26, Figure 27 and Figure 28 are respectively cutaway view, vertical view and the upward view of heat-conducting plate 62, and the edge of heat-conducting plate 62 separates with bracing frame and/or with series-produced adjacent heat-conducting plate along line of cut among the figure.
Heat-conducting plate 62 comprises adhesion coating 26, substrate 30, radiating seat 56 and anti-welding green lacquer 58.Substrate 30 comprises dielectric layer 34 and wire 54, and wherein wire 54 comprises weld pad 46, route line 48 and terminal 50.Radiating seat 56 comprises projection 22, pedestal 24 and lid 52.
After projection 22 extends through opening 28 and enters through hole 36, still be positioned at the middle position of opening 28 and through hole 36, and be positioned at an adjacent part copline of dielectric layer 34 tops with adhesion coating 26.Projection 22 keeps flat-top cone cylindricality, and its convergent sidewall makes its diameter, and the smooth dome towards adjacency lid 52 upwards successively decreases from pedestal 24.Pedestal 24 covers projection 22, adhesion coating 26, substrate 30, lid 52, wire 54 and anti-welding green lacquer 58 from the below, and extends to the peripheral edge of heat-conducting plate 62.Lid 52 is positioned at projection 22 tops, and in abutting connection with also being hot link, lid 52 covers the top of projection 22 simultaneously from the top, and extends laterally from edge, projection 22 tops with it.Also from the part of top contact and covering adhesion coating 26, this part of adhesion coating 26 is in abutting connection with projection 22 to lid 52, with projection 22 coplines, and flanked projection 22.Lid 52 also with weld pad 46 and terminal 50 coplines.
After cutting, its pedestal 24, adhesion coating 26, dielectric layer 34 and anti-welding green lacquer 58 all extend to and cut the vertical edge that forms with batch heat-conducting plate 62 of making.
The end face that weld pad 46, terminal 50 and lid 52 are positioned at dielectric layer 34 tops is copline each other.
For ease of explanation, wire 54 is that to illustrate be a continuous circuits trace in cutaway view.Yet wire 54 provides the horizontal signal route of X and Y-direction usually simultaneously, that is weld pad 46 forms the side direction dislocation at X and Y-direction each other with terminal 50, the path of route line 48 formation X and Y-direction.
The heat energy that radiating seat 56 can produce the semiconductor element that is arranged at subsequently on the lid 52 diffuses to lower one deck group body that radiating seat 56 connects.The heat energy that this semiconductor element produces flows into lid 52, enters projection 22 from lid 52, and enters pedestal 24 via projection 22.Heat energy sheds along this downward direction from pedestal 24, for example diffuses to a below heat abstractor.
The projection 22 of heat-conducting plate 62 does not all expose with route line 48, and wherein projection 22 is covered by lid 52, and route line 48 is to be covered by anti-welding green lacquer 58, is then covered by lid 52 and anti-welding green lacquer 58 simultaneously as for the end face of adhesion coating 26.For ease of explanation, Figure 27 illustrates projection 22, adhesion coating 26 and route line 48 with dotted line.
Heat-conducting plate 62 also comprises other wires 54, and those wires 54 are made of with terminal 50 weld pad 46, route line 48.For ease of explanation, illustrate and illustrate plain conductor 54 at this.In wire 54, weld pad 46 and terminal 50 are of similar shape and size usually, and route line 48 then adopts different route configurations usually.For example, part wire 54 is provided with spacing, and is separated from one another, and is electrical isolation, and part wire 54 is interlaced with each other or lead same weld pad 46, route line 48 or terminal 50 and electrically connect each other then.Similarly, part of solder pads 46 can be in order to receive independent signal, and part of solder pads 46 then shares a signal, power supply or earth terminal.
Heat-conducting plate 62 is applicable to the LED packaging body with indigo plant, green and red LED wafer, and wherein each LED wafer comprises an anode and a negative electrode, and each LED packaging body comprises corresponding anode terminal and cathode terminal.In this example, heat-conducting plate 62 can comprise six weld pads 46 and four terminals 50, so as with each anode from an independent soldering pad 46 guiding one independent terminals 50, and with each negative electrode from the common earth terminal 50 of an independent soldering pad 46 guiding one.
All can utilize a Simple cleaning step to remove oxide and residue on the exposed metal in each fabrication stage, for example can implement an of short duration oxygen electricity slurry cleaning to this case structure.Perhaps, can utilize a potassinm permanganate solution that this case structure is carried out an of short duration wet chemistry cleaning.Similarly, also can utilize distilled water drip washing this case structure to remove dirt.This cleaning can clean required surface and structure do not caused obvious impact or destruction.
The advantage of this case is not need therefrom to separate or be partitioned into confluence or associated circuitry after wire 54 forms.The confluence can be separated in forming the wet chemical etch step of weld pad 46, route line 48, terminal 50 and lid 52.
Heat-conducting plate 62 can comprise brill thoroughly or cut logical pedestal 24, adhesion coating 26, substrate 30 with anti-welding green lacquer 58 and the registration holes (not shown) that forms.Thus, below needing be arranged at one in subsequent technique, during carrier, just the instrument pin can be inserted in the registration holes, so as to heat-conducting plate 62 is placed the location heat-conducting plate 62.
Heat-conducting plate 62 can omit lid 52.Want to reach this purpose, the etchant resistive layer 42 of capable of regulating patterning makes the conductive layer 40 of whole through hole 36 tops all be exposed to form in the chemical etching liquor of weld pad 46, route line 48 and terminal 50.Another practice of omitting lid 52 is not establish conductive layer 40.
Heat-conducting plate 62 can hold a plurality of semiconductor elements but not only hold single semiconductor element.Want to reach this purpose, the etchant resistive layer 16 of capable of regulating patterning is with the more projections 22 of definition, adjust adhesion coating 26 to comprise more openings 28, adjust substrate 30 to comprise more multi-through hole 36, adjust the etchant resistive layer 42 of patterning with the more weld pads 46 of definition, route line 48, terminal 50 and lid 52, and adjust anti-welding green lacquer 58 to comprise more openings.Element beyond the terminal 50 can change lateral position in order to provide a 2X2 array for four semiconductor elements.In addition, part but the section shape of non-all elements and height (being side view) also can be adjusted to some extent.For example, weld pad 46, terminal 50 and lid 52 can keep identical side view, and route line 48 then has different route configurations.
Figure 29, Figure 30 and Figure 31 are respectively in one embodiment of the invention cutaway view, vertical view and the upward view with heat-conducting plate of vertical signal route.
In this embodiment, terminal is the bottom that is positioned at heat-conducting plate.For asking style of writing succinct, all explanations that U.S. heat-conducting plate 62 arranged are applicable to this embodiment person all to be incorporated into herein, and identical content repeats no more.Similarly, the element of present embodiment heat-conducting plate all uses corresponding reference number with the element fellow of heat-conducting plate 62.
Heat-conducting plate 64 comprises adhesion coating 26, substrate 30, wire 54, radiating seat 56 and anti-welding green lacquer 58 and 59.Substrate 30 comprises dielectric layer 34.Wire 54 comprises weld pad 46, route line 48, conductive hole 49 and terminal 50.Radiating seat 56 comprises projection 22, pedestal 24 and lid 52.
The pedestal 24 that the pedestal 24 of present embodiment is gone up an embodiment is thin, and is to keep at a distance with the peripheral edge of heat-conducting plate 64.Pedestal 24 covers projection 22 with lid 52 but does not cover adhesion coating 26, substrate 30, wire 54 or anti-welding green lacquer 58 and 59 from the below.Pedestal 24 is supporting substrate 30 also, and in adhesion coating 26 belows and terminal 50 coplines.
Anti-welding green lacquer 59 is the electrical insulation layer of a similar anti-welding green lacquer 58, and it can make pedestal 24 and terminal 50 expose, and covers the exposed parts of adhesion coating 26 from the below.
The production method of heat-conducting plate 64 and conductive plate 62 are similar, suitably adjust but be necessary for pedestal 24, wire 54 and anti-welding green lacquer 58 and 59.For example, the thickness of metallic plate 10 changes 330 microns into by 500 microns, and changes the thickness of pedestal 24 into 30 microns by 200 microns.Then according to previously described mode, adhesion coating 26 is arranged on the pedestal 24, again substrate 30 is arranged on the adhesion coating 26; To adhesion coating 26 heating and pressurization, adhesion coating 26 is flowed and curing; Then make the end face of structure become the plane with lapping mode, again conductive layer 40 is deposited on this plane.Then downwards boring is to form a hole, and this hole is to pass conductive layer 32 and 40, dielectric layer 34 and adhesion coating 26, and stretches into pedestal 24 but do not run through pedestal 24.Recycle afterwards plating, screen painting or with technology such as nozzle injections, the mode that repeats with stepping in this hole deposits conductive material to form conductive hole 49.Then etching conductive layer 32 and 40 is to form weld pad 46 and route line 48, and etching conductive layer 40 is to form lid 52, and etching pedestal 24 is to form terminal 50.Pedestal 24 is only surplus its middle body after etching.50 of terminals are the not etched part of pedestal 24 1, and it contacts adhesion coating 26 and extends its below.In addition, terminal 50 has separated with pedestal 24 and is spaced, thus the part of the non-pedestal 24 of terminal 50, and terminal 50 is in abutting connection with conductive hole 49.Then form anti-welding green lacquer 58 at the structure end face, expose weld pad 46 and lid 52 to the open air so as to selectivity; 59 bottom surfaces that are formed at structure of anti-welding green lacquer are exposed pedestal 24 and terminal 50 to the open air so as to selectivity.At last again take coating contact 60 as pedestal 24, weld pad 46, terminal 50 carry out surface treatment with lid 52.
Figure 32, Figure 33 and Figure 34 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and this semiconductor wafer group body comprises the LED packaging body that a heat-conducting plate and with horizontal signal route has back contact.
Semiconductor wafer group body 100 comprises heat-conducting plate 62, LED packaging body 102 and scolding tin 104 and 106.LED packaging body 102 comprises LED wafer 108, pedestal 110, routing 112, electric contact 114, hot junction 116 and transparent encapsulation material 118.One electrode (not shown) of LED wafer 108 is via the conductive hole (not shown) of routing 112 electrically connects to the pedestal 110, so as to LED wafer 108 electrically connects to electric contact 114.LED wafer 108 is to be arranged on the pedestal 110 by a die bond material (not shown), makes 108 hot links of LED wafer and mechanicalness attach to pedestal 110, whereby with 108 hot links of LED wafer to hot junction 116.Pedestal 110 is one to have the ceramic block of low electric conductivity and high-termal conductivity, and contact 114 and 116 is to be coated on pedestal 110 backs and from the downward projection in pedestal 110 backs.
LED packaging body 102 is to be arranged on substrate 30 and the radiating seat 56, and electrically connect is to substrate 30, and hot link is to radiating seat 56.In details of the words, LED packaging body 102 is to be arranged on weld pad 46 and the lid 52, is overlapped in projection 22, and via scolding tin 104 electrically connects to substrate 30, and via scolding tin 106 hot links to radiating seat 56.For example, scolding tin 104 contact and be between weld pad 46 and electric contact 114, while electrically connect and mechanicalness are sticked weld pad 46 and electric contact 114, whereby with LED wafer 108 electrically connects to terminal 50.Similarly, scolding tin 106 contact and be between beneficial body 52 and hot junction 116, while hot link and mechanicalness attach to lid 52 and hot junction 116, whereby with 108 hot links of LED wafer to pedestal 24.The coated metal connection pad that weld pad 46 is provided with nickel/gold in order to scolding tin 104 firm combinations, and the shape of weld pad 46 and size all cooperate electric contact 114, improves whereby the signal conduction from substrate 30 to LED packaging bodies 102.Similarly, the coated metal connection pad that lid 52 is provided with nickel/gold in order to scolding tin 106 firm combinations, and the shape of lid 52 and size all cooperate hot junction 116, improves whereby the heat transmission to radiating seat 56 from LED packaging body 102.Then and also need not cooperate hot junction 116 and design as for the shape of projection 22 and size.
If wish is made semiconductor wafer group body 100, can with a solder deposition on weld pad 46 and lid 52, then contact 114 and 116 be positioned over respectively on weld pad 46 and the lid 52 top scolders, then make this scolder reflow to form scolding tin 104 and 106 then.
For example, the mode with screen painting is printed in the tin cream selectivity on weld pad 46 and the lid 52 first, then utilizes a gripping head and an automation pattern identification system in the mode that stepping repeats LED packaging body 102 to be positioned on the heat-conducting plate 62.The gripping head of reflow machine is positioned over contact 114 and 116 respectively on the tin cream of weld pad 46 and lid 52 tops.Then heat tin cream, make it with relatively low temperature (such as 190C) reflow, then remove thermal source, wait for the tin cream cooling quietly and solidify to form sclerosis scolding tin 104 and 106.Perhaps, can place the tin ball at weld pad 46 and lid 52, then contact 114 and 116 is positioned over respectively on the tin ball of weld pad 46 and lid 52 tops, then heat the tin ball and make its reflow to form scolding tin 104 and 106 then.
Originally scolder can be deposited on heat-conducting plate 62 or the LED packaging body 102 via coating or printing or placement technique, is located between heat-conducting plate 62 and the LED packaging body 102, and makes its reflow.Scolder also can place on the terminal 50 and use for lower one deck group body.In addition, also can utilize a conduction sticker (for example fill with silver epoxy resin) or other to link media and replace scolder, and weld pad 46, terminal 50 needn't be identical with connection medium on the lid 52.
This semiconductor wafer group body 100 is a second level monocrystalline module.
Figure 35, Figure 36 and Figure 37 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and wherein this semiconductor wafer group body comprises the LED packaging body that a heat-conducting plate and with horizontal signal route has the side pin.
In this embodiment, this LED packaging body has the side pin and does not have back contact.For asking simple and clear, the related description of all group of body 100 is applicable to this embodiment person all to be incorporated into herein, and identical explanation will not repeat.Similarly, the element of present embodiment group body and the similar person of element who organizes body 100 all adopt corresponding reference number, but the radix of its coding change 200 into by 100.For example, LED wafer 208 is corresponding to LED wafer 108, and pedestal 210 is then corresponding to pedestal 110, by that analogy.
Semiconductor wafer group body 200 comprises heat-conducting plate 62, LED packaging body 202 and scolding tin 204 and 206.LED packaging body 202 comprises LED wafer 208, pedestal 210, routing 212, pin 214 and transparent encapsulation material 218.LED wafer 208 is to pin 214 via routing 212 electrically connects.Pedestal 210 back sides comprise thermo-contact surface 216, and in addition, pedestal 210 is narrower than pedestal 110 and has identical lateral dimensions and shape with hot junction 116.LED wafer 208 is to be arranged on the pedestal 210 via a die bond material (not shown), makes 208 hot links of LED wafer and mechanicalness attach to pedestal 210, whereby with 208 hot links of LED wafer to thermo-contact surface 216.Pin 214 extends laterally from pedestal 210, and thermo-contact surface 216 is to face down.
If wish is made semiconductor wafer group body 200, one scolder can be placed on weld pad 46 and the lid 52, then place pin 214 and thermo-contact surface 216 at weld pad 46 and the scolder above the lid 52 respectively, then make this scolder reflow to form scolding tin 204 and 206 then.
This semiconductor wafer group body 200 is a second level monocrystalline module.
Figure 38, Figure 39 and Figure 40 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and wherein this semiconductor wafer group body comprises heat-conducting plate and the semiconductor wafer with horizontal signal route.
In this embodiment, this semiconductor element is a wafer but not a packaging body, and this wafer is to be arranged at aforementioned radiating seat but not on the aforesaid base plate.In addition, this wafer is to be overlapped in aforementioned projection but not aforesaid base plate, and this wafer be via a routing electrically connect to aforementioned weld pad, and utilize a die bond material hot link to aforementioned lid.
Semiconductor wafer group body 300 comprises heat-conducting plate 62, wafer 302, routing 304, die bond material 306 and encapsulating material 308.Wafer 302 comprises end face 310, bottom surface 312 and routing connection pad 314.End face 310 is for active surface and comprise routing connection pad 314, and bottom surface 312 then is the thermo-contact surface.
Wafer 302 is to be arranged on the radiating seat 56, and electrically connect is to substrate 30, and hot link is to radiating seat 56.In details of the words, wafer 302 is to be arranged on the lid 52, is positioned at the periphery of lid 52, is overlapped in projection 22 but underlapped in substrate 30.In addition, wafer 302 be via routing 304 electrically connects to substrate 30, simultaneously attach to radiating seat 56 via 306 hot links of die bond material and mechanicalness.For example, routing 304 is to be connected in and electrically connect weld pad 46 and routing connection pad 314, whereby with wafer 302 electrically connects to terminal 50.Similarly, die bond material 306 contact and between lid 52 and thermo-contact surface 312, while hot link and mechanicalness attach to lid 52 and thermo-contact surface 312, whereby with wafer 302 hot links to pedestal 24.The coated metal connection pad that weld pad 46 is provided with nickel/silver in order to routing 304 firm engagement, improve whereby that the signal to wafer 302 transmits from substrate 30.In addition, the shape of lid 52 and size are to join suitablely with thermo-contact surface 312, improve whereby from wafer 302 heat to radiating seat 56 and transmit.Then not and also need not cooperate thermo-contact surface 312 and design as for the shape of projection 22 and size.
Encapsulating material 308 is a solid-state protectiveness plastic cement cladding that is electrically insulated, and it can be wafer 302 and routing 304 provides the environmental protection such as moisture resistant and anti-particulate.Wafer 302 is to be embedded in the encapsulating material 308 with routing 304.In addition, if wafer 302 is the optical crystal chips such as LED, then encapsulating material 308 can be transparence.Encapsulating material 308 is transparence in Figure 39 be for conveniently illustrating.
If wish is made semiconductor wafer group body 300, can utilize die bond material 306 that wafer 302 is arranged on the lid 52, then weld pad 46 and routing connection pad 314 are engaged with routing, then form encapsulating material 308.
For example, die bond material 306 was one to have the argentiferous epoxy paste of high-termal conductivity originally, and was printed on the lid 52 with the mode selectivity of screen painting.Then utilize a gripping head and an automation pattern identification system in the mode that stepping repeats wafer 302 to be positioned on this epoxy resin silver paste.Then heat this epoxy resin silver paste, it is hardened to finish die bond in relative low temperature (such as 190 ℃) is lower.Routing 304 is gold thread, and it connects weld pad 46 and routing connection pad 314 with hot ultrasonic waves immediately.At last again with encapsulating material 308 transfer mouldings on structure.
This semiconductor wafer group body 300 is a first order monocrystalline packaging body.
Figure 41, Figure 42 and Figure 43 are respectively cutaway view, vertical view and the upward view of semiconductor wafer group body in one embodiment of the invention, and wherein this semiconductor wafer group body comprises heat-conducting plate and the semiconductor wafer with vertical signal route.
In this embodiment, this semiconductor element is a wafer but not a packaging body, and this wafer is to be arranged at aforementioned radiating seat but not on the aforesaid base plate.Moreover this wafer is to be overlapped in aforementioned projection but not aforesaid base plate, and this wafer be via a routing electrically connect to aforementioned weld pad, and utilize a die bond material hot link to aforementioned lid.In addition, aforementioned terminal is the bottom that is positioned at aforementioned heat-conducting plate.
For asking simple and clear, the related description of all group of body 300 is applicable to this embodiment person all to be incorporated into herein, and identical explanation will not repeat.Similarly, the element of present embodiment group body and the similar person of element who organizes body 300 all adopt corresponding reference number, but the radix of its coding change 400 into by 300.For example, wafer 402 is corresponding to wafer 302, and encapsulating material 408 is then corresponding to encapsulating material 308, by that analogy.
Semiconductor wafer group body 400 comprises heat-conducting plate 64, wafer 402, routing 404, die bond material 406 and encapsulating material 408.Wafer 402 comprises end face 410, bottom surface 412 and routing connection pad 414.End face 410 is for active surface and comprise routing connection pad 414, and bottom surface 412 then is the thermo-contact surface.
If wish is made semiconductor wafer group body 400, can utilize die bond material 406 that wafer 402 is arranged on the lid 52, then weld pad 46 and routing connection pad 414 are engaged with routing, at last again with encapsulating material 408 transfer mouldings on structure.
This semiconductor wafer group body 400 is a first order monocrystalline packaging body.
Figure 44, Figure 45 and Figure 46 are respectively cutaway view, vertical view and the upward view of a light source time group body in one embodiment of the invention, and wherein this light source time group body comprises semiconductor wafer group body and a heat abstractor.
Light source time group body 500 comprises semiconductor wafer group body 100 and heat abstractor 502.Heat abstractor 502 comprises thermo-contact surface 504, fin 506 and fan 508.Group body 100 is to be arranged on the heat abstractor 502 and mechanicalness is incorporated into heat abstractor 502, for example with the combination of screw (not shown).Therefore, pedestal 24 is to be clamped in thermo-contact surface 504 and with it hot link, whereby with radiating seat 56 hot links to heat abstractor 502.Radiating seat 56 can spread the heat energy that LED wafer 108 produces, and with the thermal energy transfer of this diffusion to heat abstractor 502, heat abstractor 502 utilizes fin 506 and fan 508 that this heat energy is distributed to peripheral environment immediately.
Light source time group body 500 is that the lamp socket (not shown) of a capable of replacing standard incandescent bulb designs.This lamp socket comprises time group body 500, a glass cover, a screw base, a control board, circuit and a shell.Inferior group of body 500, this control board and this circuit are to be coated in this shell.This circuit be extend from this control board and with terminal 50 seam.This glass cover and this screw base protrude from respectively this shell two ends.This glass cover makes outside LED wafer 108 is revealed in, but this screw base screw lock enters a light source socket, and this control board then electrically is linked to terminal 50 by this circuit.This shell is a two-piece type plastic casing, is divided into upper and lower two parts.This glass cover is the top that adheres to and protrude from this shell the first half, and this screw base is the below that adheres to and protrude from this shell the latter half.Inferior group of body 500 is the first half that is arranged at the latter half of this shell and stretches into this shell with this control board.
During operation, this screw base will be passed to from the alternating current of this light source socket this control board, and this control board then is converted to this alternating current the direct current after the rectification.This circuit is sent to terminal 50 with the direct current after the rectification on the one hand, on the one hand with another terminal 50 ground connection.Therefore, LED wafer 108 can pass through this glass cover luminous lighting.The powerful local heat energy that is produced by LED wafer 108 is to flow into radiating seat 56, and diffuses to heat abstractor 502 by radiating seat 56.Fin 506 in the heat abstractor 502 reaches air with heat energy, by fan 508 hot-air is blown out to peripheral environment with radial by the slotted hole on this shell again.
Above-mentioned semiconductor wafer group body and heat-conducting plate only are illustrative example, and the present invention also can realize by other various embodiments.In addition, above-described embodiment can be complied with considering of design and reliability, and being mixed with each other collocation is used or used with other embodiment mix and match.For example, this semiconductor element can be a LED packaging body, and this heat-conducting plate then can provide the vertical signal route.This substrate can comprise individual layer wire and multi-layer conductor leads.This heat-conducting plate can comprise a plurality of projections, and those projections are to line up an array to use for a plurality of semiconductor elements, and in addition, this heat-conducting plate can comprise more wires for cooperating extra semiconductor element.Similarly, this semiconductor element can be a LED packaging body with a plurality of LED wafers, and this heat-conducting plate then can comprise more wires to cooperate extra LED wafer.This semiconductor element and this lid can be overlapped in this substrate and cover this projection, this through hole and this opening from the top.
This semiconductor element can use alone this radiating seat or share this radiating seat with other semiconductor elements.For example, single semiconductor element can be arranged on this radiating seat, or a plurality of semiconductor elements are arranged on this radiating seat.For example, four pieces of small chips that are arranged in the 2X2 array can be attached to this projection, this substrate then can comprise extra wire to cooperate the electric connection of those wafers.This practice has more economic benefit far beyond a small projection is set for each wafer.
This semiconductor wafer can be optical or non-optical property.For example, this wafer can be a LED, a solar cell, a microprocessor, a controller or a radio frequency (RF) power amplifier.Similarly, this semiconductor package body can be a LED packaging body or a radio-frequency module.Therefore, this semiconductor element can be optics or the non-optical wafer once encapsulation or un-encapsulated.In addition, we can utilize multiple binding medium with this semiconductor element mechanicalness binding, electrically connect and hot link to this heat-conducting plate, comprise and utilize welding and use the modes such as conduction and/or heat conduction sticker to reach.
The heat energy that this radiating seat can produce this semiconductor element rapidly, effectively and evenly is distributed to lower one deck group body and need make type of thermal communication cross the elsewhere of this adhesion coating, this substrate or this heat-conducting plate.Just can use thus the lower adhesion coating of thermal conductivity, thereby significantly reduce cost.This radiating seat can comprise integrally formed projection and pedestal, and with this projection be metallurgical the binding and a connected hot lid, improve whereby reliability and reduce cost.This lid can with this weld pad copline so that with this semiconductor without part form electrically, heat energy and mechanicalness link.In addition, this lid can be complied with this semiconductor element custom-made by size, and this pedestal then can be tailor-made according to lower one deck group scale of construction body, strengthens whereby the hot link to lower one deck group body from this semiconductor element.For example, this projection can be rounded on a lateral plane, and this lid can be square or rectangle on a lateral plane, and the side view of the side view of this lid and this semiconductor element hot junction is same or similar.
This radiating seat can be electrically connect or electrical isolation with this semiconductor element and this substrate.For example, this lip-deep second conductive layer (front embodiment does not mention) that is positioned at after the grinding can comprise a route line, this route line is to extend through this adhesion coating between this substrate and this lid, so as to this semiconductor element electric is linked to this radiating seat.Then, this radiating seat is ground connection electrically, so as to this semiconductor element electric ground connection.
That this radiating seat can be is copper, aluminium matter, copper/nickel/aluminium alloy or other heat-conducting metal structures.
This projection can be deposited on this pedestal or be integrally formed with this pedestal.This projection can be integrally formed with this pedestal, thereby become single metallic object (such as copper or aluminium).This projection also can be integrally formed with this pedestal, makes this both interface comprise single metallic object (for example copper), then comprises other metals (for example the top of projection is scolder, and the bottom of projection and pedestal then are copper) as for the elsewhere.This projection also can be integrally formed with this pedestal, makes this both interface comprise the single metallic object of multilayer (for example be provided with a nickel resilient coating outside an aluminium core, then be provided with a bronze medal layer on this nickel resilient coating).
This projection can comprise a smooth end face, and this end face is and this adhesion coating copline.For example, this projection can with this adhesion coating copline, perhaps this projection can be accepted etching after this adhesion coating solidifies, thereby the adhesion coating above this projection forms a depression.We are this projection of alternative etching also, so as to form a depression that extends to below its end face in this projection.In above-mentioned arbitrary situation, this semiconductor element all can be arranged on this projection and be arranged in this depression, and this routing then can this semiconductor element in this depression extends to this weld pad outside this depression.In the case, this semiconductor element can be a LED wafer, and by this depression LED light is focused on towards this upward direction.
This pedestal can be this substrate mechanical support is provided.For example, this pedestal can prevent the flexural deformation in the process of metal grinding, wafer setting, routing joint and mold encapsulant of this substrate.When this terminal was positioned at this dielectric layer top, this pedestal also can cover from the below this group body; Perhaps, when this terminal was positioned at this adhesion coating below, this pedestal can be kept at a distance with this peripheral edge of organizing body.In addition, the back of this pedestal can comprise along the fin of this downward direction projection.For example, can utilize bottom surface that a routing machine cuts this pedestal forming lateral grooves, and these lateral grooves are fin.In this example, the thickness of this pedestal can be 700 microns, and the degree of depth of described groove can be 500 microns, that is the height of described fin can be 500 microns.Described fin can increase the surface area of this pedestal, if described fin is to be exposed in the air but not to be arranged on the heat abstractor, then can promote this pedestal via the thermal conductivity of thermal convection.
This lid can be after this adhesion coating solidifies, before this weld pad and/or this terminal form, in or after, make with multiple deposition technique, comprise electroplating, the technology such as electroless plating coating, evaporation and splash form the single or multiple lift structure.This lid can adopt the metal material identical with this projection, or adopt with in abutting connection with the identical metal material of the pre-section of the projection of this lid.In addition, this through hole of the extensible leap of this lid also arrives this substrate, or maintain in the circumference range of this through hole.Therefore, this lid can contact this substrate or keep at a distance with this substrate.In above-mentioned arbitrary situation, this lid all is that the top from this projection extends laterally along side surface direction.
This adhesion coating can provide firm mechanicalness to link between this radiating seat and this substrate.For example, this adhesion coating can extend laterally and cross the peripheral edge that this wire arrives this group body from this projection, this adhesion coating can fill up the space between this radiating seat and this substrate, and this adhesion coating can be positioned at this space, and this adhesion coating can be one have equally distributed joint line without the hole structure.This adhesion coating also can absorb between this radiating seat and this substrate because of what thermal expansion produced and not mate phenomenon.In addition, this adhesion coating can be a low-cost dielectric, and need not possess high-termal conductivity.Moreover this adhesion coating is difficult for delamination.
The thickness of our this adhesion coating of capable of regulating makes this adhesion coating essence fill up this breach, and makes nearly all sticker all be positioned at structure in curing and/or after grinding.For example, desirable film thickness can be determined by trial and error pricing.Similarly, we also the thickness of this dielectric layer of capable of regulating to reach this effect.
This substrate can be a laminar structure cheaply, and need not have high-termal conductivity.In addition, this substrate can comprise single conductive layer or most conductive layers.Moreover this substrate can comprise conductive layer or be comprised of conductive layer.
This conductive layer can be separately set on this adhesion coating.For example, can form this through hole at this conductive layer first, then this conductive layer (not containing other layers body) is arranged on this adhesion coating, make this conductive layer contact this adhesion coating, and expose towards this upward direction.Then extend into this through hole as for this projection, and expose towards this upward direction by this through hole.In the case, the thickness of this conductive layer can be 100 to 200 microns, and for example 125 microns, this thickness is enough thick on the one hand, and is then enough thin on the one hand so unlikely bending is rocked when carrying, and can bear high drive current, so do not need over etching can form pattern.
Also this conductive layer and this dielectric layer can be arranged on this adhesion coating simultaneously.For example, can be first with this conductive layer pressing on this dielectric layer, then form this through hole at this conductive layer and this dielectric layer, then this conductive layer and this dielectric layer are arranged on this adhesion coating, this conductive layer is exposed towards this upward direction, and make the contact of this dielectric layer and between this conductive layer and this adhesion coating, thereby this conductive layer and this adhesion coating are separated.Then extend into this through hole as for this projection, and expose towards this upward direction by this through hole.In the case, the thickness of this conductive layer can be 10 to 50 microns, and for example 30 microns, this thickness is enough thick on the one hand, and reliable signal conduction can be provided, and is then enough thin on the one hand, helps to lower weight and cost.This dielectric layer perseverance is the part of this heat-conducting plate.
Also this conductive layer and a carrier can be arranged on this adhesion coating simultaneously.For example, can utilize first a film that this conductive layer is adhered to a carrier such as amphiorentation polyethylene terephthalate glued membrane (MYLAR), then only at this conductive layer but not this carrier forms this through hole, then this conductive layer and this carrier are arranged on this adhesion coating, make this carrier cover this conductive layer, and expose towards this upward direction, and make the contact of this film and between this carrier and this conductive layer, then contact and between this film and this adhesion coating as for this conductive layer.This projection is to aim at this through hole, and is covered from the top by this carrier.After this adhesion coating solidifies, can utilize ultraviolet light to decompose this film, in order to this carrier is divested from this conductive layer, thereby this conductive layer is exposed towards this upward direction, then just can grind and this conductive layer of patterning to form this wire.In the case, the thickness of this conductive layer can be 10 to 50 microns, and for example 30 microns, this thickness is enough thick on the one hand, and reliable signal conduction can be provided, and is then enough thin on the one hand, can reduce weight and cost; Thickness as for this carrier can be 300 to 500 microns, and this thickness is enough thick on the one hand, and is enough thin again on the one hand so unlikely bending is rocked when carrying, and helps to reduce weight and cost.This carrier only is a temporary transient fixture, and an impermanent part that belongs to this heat-conducting plate.
The needs of visual this semiconductor element of this weld pad and this terminal and lower one deck group body and adopt multiple packing forms.
The end face of this weld pad and this lid can be copline, just can by the avalanche degree of control tin ball, strengthen the welding between this semiconductor element and this heat-conducting plate thus.
This weld pad, this terminal and this route line of this dielectric layer top can be made with multiple deposition technique when this substrate also or already is not arranged on this adhesion coating, comprise electroplating, the technology formation single or multiple lift structures such as electroless plating coating, evaporation and splash.For example, can be when this substrate also be arranged on this adhesion coating, just with this conductive layer pattern of this substrate, but the operation of this patterning also can be after this substrate adheres to this projection and this pedestal by this adhesion coating for it.
Carrying out the surface-treated operation with described coating contact can be before or after this weld pad and the formation of this terminal for it.For example, this coating can be deposited on this second conductive layer, then utilizes the etchant resistive layer of patterning to define this weld pad and this terminal and carry out etching, so that this coating has pattern.
This wire can comprise extra weld pad, terminal, conductive hole and route line and passive device, and can be not isomorphism type.This wire can be used as a signals layer, a power layer or a ground plane, looks closely the purpose of its corresponding semiconductor component pads and decides.This wire also can comprise various conducting metals, for example copper, gold, nickel, silver, palladium, tin, its mixture and alloy thereof.Desirable composition had both depended on the outside character that links medium, also depended on considering of design and reliability aspect.In addition, the personage who is skillful in this skill should understand, used copper can be fine copper in this semiconductor wafer group body, but normally take copper as main alloy, such as copper-zirconium (99.9% bronze medal), copper-Yin-phosphorus-magnesium (99.7% bronze medal) and copper-Xi-iron-phosphorus (99.7% bronze medal), so as to improving such as mechanical performances such as tensile strength and ductility.
In the ordinary course of things, the surface that is preferably in after the aforementioned grinding is provided with this lid, dielectric layer, anti-welding green lacquer, coating contact and the second conductive layer, but then can omit it in certain embodiments.For example, the mode of boring produces if this opening and this through hole are with punching, thereby the shape at this projection top and size are all matched with the thermo-contact surface of this semiconductor element, then can omit this lid and this second conductive layer with the reduction cost.Similarly, if use individual layer signal route, can omit this dielectric layer to reduce cost.
This heat-conducting plate can comprise a thermal hole, this thermal hole is to keep at a distance with this projection, and pass this dielectric layer and this adhesion coating at this opening and this through hole extension, while adjacency and this pedestal of hot link and this lid, promote whereby the radiating effect to this pedestal from this lid, and promote that heat energy spreads in this pedestal.
The group body of this case can provide level or vertical single or multiple lift signal route.The people such as Wang Jiazhong on September 11st, 2009 file an application the 12/557th, No. 540 U.S. patent application case: " having the radiating seat of projection/pedestal and the semiconductor wafer group body of horizontal signal route " namely discloses a kind of structure with horizontal multilayer signal route, the weld pad of its dielectric layer top and terminal are that first and second conductive hole of this dielectric layer is passed in utilization and the route line of this dielectric layer below is reached electrically connect, and the content of this U.S. patent application case is incorporated this paper into by reference at this.In addition, the people such as Wang Jiazhong on September 11st, 2009 file an application the 12/557th, No. 541 U.S. patent application case: " having the radiating seat of projection/pedestal and the semiconductor wafer group body of vertical signal route " then discloses a kind of structure with vertical multi-layer signal route, the terminal of the weld pad of its dielectric layer top and adhesion coating below is to utilize the first conductive hole, the route line below this dielectric layer that passes this dielectric layer and the second conductive hole that passes this adhesion coating to reach electrically connect, and the content of this U.S. patent application case is incorporated this paper into by reference at this.
The operation form of this heat-conducting plate can be single or multiple heat-conducting plate, decides on designing for manufacturing.For example, can make separately single heat-conducting plate.Perhaps, can utilize the simultaneously batch a plurality of heat-conducting plates of manufacturing of single metal plate, single adhesion coating, single substrate and single anti-welding green lacquer, then row separates again.Similarly, for each heat-conducting plate in same batch, we also can utilize single metal plate, single adhesion coating, single substrate and single anti-welding green lacquer batch to make simultaneously multicomponent not for radiating seat and the wire of single semiconductor element.
For example, can etch many grooves to form this pedestal and a plurality of projection at a metallic plate; Then a uncured adhesion coating with opening of corresponding described projection is arranged on this pedestal, in order to do making each projection all extend through a corresponding opening; Then a described substrate (it has the through hole of single conductive layer, single dielectric layer and the corresponding described projection of a plurality of difference) is arranged on this adhesion coating, so that each projection all extends through a corresponding opening and enters a pair of through hole of answering; Then utilize and present a theatrical performance as the last item on a programme this pedestal and the each other closing of this substrate, force this adhesion coating to enter the breach between between described projection and this substrate in the described through hole; This adhesion coating is solidified, then grind described projection, this adhesion coating and this first conductive layer to form an end face; Then this second conductive layer coating is arranged on described projection, this adhesion coating and this first conductive layer; Then this first and second conductive layer of etching is to form weld pad and the terminal of the corresponding described projection of a plurality of difference, and this second conductive layer of etching is to form the lid of the corresponding described projection of a plurality of difference; Then should place on the structure by anti-welding green lacquer, make this anti-welding green lacquer produce pattern, so as to exposing described weld pad, described terminal and described lid to the open air; Then with the coating contact this pedestal, described weld pad, described terminal and described lid are carried out surface treatment; At the cutting of the appropriate location of described heat-conducting plate peripheral edge or this pedestal of splitting, this substrate, this adhesion coating and this anti-welding green lacquer, other heat-conducting plate is separated from one another in order to do making at last.
The operation form of this semiconductor wafer group body can be single group of body or a plurality of groups of bodies, depends on designing for manufacturing.For example, can make separately single group of body.Perhaps, batch a plurality of groups of bodies of manufacturing separate each heat-conducting plate afterwards more one by one simultaneously.Similarly, also a plurality of semiconductor element electric bindings, hot link and mechanicalness can be linked to each heat-conducting plate in batch volume production.
For example, a plurality of tin cream parts can be deposited on respectively on a plurality of weld pads and the lid, a plurality of LED packaging bodies then place respectively on the described tin cream part, then heat simultaneously described tin cream partly so that its reflow, sclerosis and form a plurality of pads separate each heat-conducting plate afterwards more one by one.
That a plurality of die bond materials are deposited on respectively on a plurality of lids in another example, then a plurality of wafers are positioned over respectively on the described die bond material, heat simultaneously more described die bond material afterwards so that its sclerosis and form a plurality of die bonds, then described wafer routing is engaged to corresponding weld pad, then form corresponding encapsulating material at described wafer with routing, again each heat-conducting plate is separated one by one at last.
We can make each heat-conducting plate separated from one another by one step or multiple tracks step.For example, a plurality of heat-conducting plates batch can be made a flat board, then a plurality of semiconductor elements are arranged on this flat board, a plurality of semiconductor wafer group bodies that afterwards again should flat board consist of separate one by one.Perhaps, a plurality of heat-conducting plates batch can be made a flat board, the a plurality of heat-conducting plates that then should flat board consist of divide and are cut to a plurality of heat conduction laths, then a plurality of semiconductor elements are arranged at respectively on the described heat conduction lath, a plurality of semiconductor wafer group bodies that again each heat conduction lath consisted of at last are separated into individuality by strip.In addition, when cutting apart heat-conducting plate, can utilize machine cuts, laser cutting, compartition or other applicable technologies.
In this article, " adjacency " meaning of one's words finger element is integrally formed (forming single individuality) or be in contact with one another (each other continuously every or do not separate).For example, this projection is in abutting connection with this pedestal, and this adopts when forming this projection the method that increases or reduction method irrelevant.
" overlapping " meaning of one's words refers to be positioned at the top and extends the periphery of a below element." overlapping " comprises and extends the inside and outside of this periphery or be seated in this periphery.For example, this semiconductor element is to be overlapped in this projection, be to run through simultaneously this semiconductor element and this projection because of an imaginary vertical line, be all the element (such as this lid) that this imagination vertical line runs through no matter whether have another between this semiconductor element and this projection, no matter and also whether have another imaginary vertical line only to run through this semiconductor element and do not run through this projection (that is the periphery that is positioned at this projection is outer).Similarly, this adhesion coating is to be overlapped in this pedestal and overlapping by this weld pad, and this pedestal is then overlapping by this projection.Similarly, this projection is to be overlapped in this pedestal and to be positioned at its periphery.In addition, " overlapping " and " be positioned at top " synonym, " superimposed " then with " being positioned at the below " synonym.
" contact " meaning of one's words refers to direct contact.For example, this dielectric layer contacts this weld pad but does not contact this projection or this pedestal.
" covering " meaning of one's words refers to from the top, covers fully from the below and/or from the side.For example, this pedestal covers this projection from the below, but this projection does not cover this pedestal from the top.
" layer " word comprises the layer body that is provided with pattern or does not establish pattern.For example, when this substrate was arranged on this adhesion coating, this conductive layer can be a blank patternless flat board on this dielectric layer; And when this semiconductor element was arranged on this radiating seat, this conductive layer can be on this dielectric layer a circuit pattern with interval wire.In addition, " layer " can comprise most overlapping layers.
" weld pad " one language refers to that one is used for being connected and/or engaging the connecting area of outside connection medium (such as scolder or routing) when using with this wire collocation, should outside connection medium then can with this wire electrically connect to this semiconductor without part.
" terminal " language refers to a connecting area when using with this wire collocation, it can contact and/or engage the outside medium (such as scolder or routing) that links, and should the outside linking medium then can be with this wire electrically connect to an external equipment (for example a printed circuit board (PCB) or a connected wire) relevant with lower one deck group body.
" lid " one language refers to that one is used for being connected and/or engaging the contact area of outside connection medium (such as scolder or heat conduction sticker) when using with this radiating seat collocation, should outside connection medium then can be with this radiating seat hot link to this semiconductor element.
" opening " refers to together perforated holes with languages such as " through holes ".For example, when this projection inserted this opening of this adhesion coating, this projection was to be exposed to this adhesion coating along upward direction.Similarly, when this projection inserted this through hole of this substrate, this projection was to be exposed to this substrate along upward direction.
Relatively moving between " insertion " meaning of one's words finger element.For example, " this projection is inserted in this through hole " and comprise: this projection maintains static and is moved to this pedestal by this substrate; This substrate maintains static and is moved to this substrate by this projection; And this projection and the each other closing of this substrate.Again for example, " it is interior that this projection is inserted (or extending to) this through hole " comprises: this projection runs through (penetrate and pass) this through hole; And this projection inserts but does not run through (penetrate but do not pass) this through hole.
" each other closing " one also the relatively moving between finger element of speaking.For example, " this pedestal and the each other closing of this substrate " comprise: this pedestal maintains static and by this this pedestal of substrate migration; This substrate maintains static and is moved to this substrate by this pedestal; And this pedestal and this substrate are mutually close.
Relative position between " aligning " meaning of one's words finger element.For example, when this adhesion coating has been arranged on this pedestal, this substrate has been arranged on this adhesion coating, this projection has inserted and aim at this opening, and when this through hole has been aimed at this opening, no matter this projection is to insert this through hole or be positioned at below this through hole and with it to keep at a distance, and this projection has all been aimed at this through hole.
" son is set " one the language comprise with single or multiple support component between contact and noncontact.For example, this semiconductor element is to be arranged on this radiating seat, no matter this semiconductor element is this radiating seat of actual contact or is separated by with a die bond material with this radiating seat.Similarly, this semiconductor element is to be arranged on this radiating seat, and though this semiconductor element be only be arranged on this radiating seat or be arranged at simultaneously this radiating seat and this substrate on.
" adhesion coating ... among this breach " meaning of one's words refers to be arranged in this adhesion coating of this breach.For example, " adhesion coating extends across this dielectric layer in this breach " means this adhesion coating extension in this breach and crosses over this dielectric layer.Similarly, " adhesion coating is in contact among this breach and between between this projection and this dielectric layer " mean that this adhesion coating in this breach contacts and between this dielectric layer of this projection of this breach madial wall and this breach lateral wall.
" top " meaning of one's words is pointed to upper the extension, and comprises adjacency and non-adjacent element and overlapping and non-overlapped element.For example, this projection is to extend this pedestal top, simultaneously in abutting connection with, be overlapped in this pedestal and go out from this pedestal projection.Similarly, this projection is to extend to this dielectric layer top, even if this projection not in abutting connection with or be overlapped in this dielectric layer.
" below " meaning of one's words is pointed to downward-extension, and comprises adjacency and non-adjacent element and overlapping and non-overlapped element.For example, this pedestal is to extend this projection below, and is overlapping by this projection in abutting connection with this projection, and goes out from this projection projection.Similarly, this projection is to extend this dielectric layer below, even if this projection is not in abutting connection with this dielectric layer or overlapping by this dielectric layer.
The vertical direction that so-called " making progress " reaches " downwards " is not the orientation that depends on this semiconductor wafer group body (or this heat-conducting plate), and all personages who is familiar with this skill can understand the direction of its actual indication easily.For example, this projection is vertically to extend this pedestal top along upward direction, and this adhesion coating then vertically extends this weld pad below along downward direction, and it is irrelevant whether this and this group body is inverted and/or whether is arranged on the heat abstractor.Similarly, this pedestal is to extend from this projection " side direction " along a lateral plane, and whether this and this group body is inverted, rotates or is tilted and have nothing to do.Therefore, should be upwards and downward direction be toward each other and perpendicular to side surface direction, in addition, the element of side direction alignment be one perpendicular to this upwards with the lateral plane of downward direction on copline each other.
Semiconductor wafer group body of the present invention has multiple advantages.The reliability of this group body is high, price is plain and extremely be fit to volume production.This group body is particularly useful for easily producing high heat and needs excellent radiating effect can effectively reach the high power semiconductor element of reliable operation, for example LED packaging body, large-scale semiconductor wafer and a plurality of small semiconductor element that uses simultaneously (a plurality of little shape semiconductor wafer of for example arranging with array way).
The manufacturing process of this case has the height applicability, and is in conjunction with the electrical ties, hot link and the mechanicalness connecting technology that use various maturations in unique, progressive mode.In addition, the manufacturing process of this case does not need expensive tool to implement.Therefore, this manufacturing process can significantly promote output, yield, usefulness and the cost benefit of conventional package technology.Moreover the group body utmost point of this case is suitable for copper wafer and unleaded environmental requirement.
Embodiment described herein is the usefulness for illustration, wherein the existing element of this related skill or step or through simplifying or omitting to some extent in order to avoid fuzzy characteristics of the present invention.Similarly, graphic clear for making, graphic middle repetition or non-essential element and reference number or to some extent omission.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (11)
1. semiconductor wafer group body is characterized in that:
This semiconductor wafer group body comprises at least:
Semiconductor element;
One adhesion coating, it has an opening at least;
One radiating seat, it comprises a projection and a pedestal at least, wherein this projection is to extend this pedestal top in abutting connection with this pedestal and along a upward direction, and this pedestal is to extend this projection below along a downward direction opposite with this upward direction, and along extending laterally from this projection perpendicular to this side surface direction that upwards reaches downward direction;
One substrate, it comprises a weld pad and a dielectric layer at least, and wherein a through hole extends through this substrate; And
One terminal;
Wherein this semiconductor element is to be positioned at this projection top and to be overlapped in this projection, this semiconductor element be electrically connect to this weld pad, thereby electrically connect to this terminal, and this semiconductor element be hot link to this projection, thereby hot link is to this pedestal;
Wherein this adhesion coating is to be arranged on this pedestal, extend this pedestal top, extend into a breach that is positioned between this projection and this substrate in this through hole, and in this breach, extend across this dielectric layer, simultaneously extend laterally to this terminal or cross this terminal from this projection, and be between between this projection and this dielectric layer and between this pedestal and this substrate;
Wherein this substrate is to be arranged on this adhesion coating and to extend this pedestal top; And
Wherein this projection extends into this opening and this through hole, and this pedestal then extends this semiconductor element, this adhesion coating and this substrate below;
Wherein this radiating seat comprises a lid at least, and this lid is positioned at an over top of this projection, in abutting connection with this top of this projection, and covers this top of this projection from the top, extends laterally along described side surface direction this top from this projection simultaneously.
2. semiconductor wafer group body as claimed in claim 1 is characterized in that: this lid and this weld pad are copline in this dielectric layer top.
3. semiconductor wafer group body as claimed in claim 1, it is characterized in that: this lid is rectangle, and this top of this projection is circular.
4. semiconductor wafer group body as claimed in claim 1 is characterized in that: this lid is square, and this top of this projection be circle.
5. semiconductor wafer group body as claimed in claim 1, it is characterized in that: the size of this lid and shape are to cooperate the thermo-contact surface of this semiconductor element and design, and the size at this top of this projection and shape then are not to cooperate this thermo-contact surface of this semiconductor element and design.
6. semiconductor wafer group body is characterized in that:
This semiconductor wafer group body comprises at least:
Semiconductor element;
One adhesion coating, it has an opening at least;
One radiating seat, it comprises a projection at least, one pedestal and a lid, wherein this projection is in abutting connection with this pedestal and integrally formed with this pedestal, this projection extends this pedestal top along a upward direction, and make this pedestal and this lid form hot link, this pedestal extends this projection below along a downward direction opposite with this upward direction, and along extending laterally from this projection perpendicular to this side surface direction that upwards reaches downward direction, this lid is positioned at an over top of this projection, this top in abutting connection with this projection, and cover this top of this projection from the top, extend laterally along described side surface direction this top from this projection simultaneously;
One substrate, it comprises a weld pad, a terminal, a route line and a dielectric layer at least, wherein this weld pad, this terminal contact this dielectric layer with this route line and extend this dielectric layer top, and the conductive path between this weld pad and this terminal comprises this route line, and a through hole extends through this substrate;
Wherein this semiconductor element is to be arranged on this lid, is overlapped in this projection, and electrically connect is to this weld pad, thus electrically connect to this terminal, and this semiconductor element be hot link to this lid, thereby hot link is to this pedestal;
Wherein this adhesion coating is to be arranged on this pedestal, extend this pedestal top, extend into a breach that is positioned between this projection and this substrate in this through hole, and in this breach, extend across this dielectric layer, this adhesion coating is in this breach between this projection and this dielectric layer, outside this breach then between this pedestal and this substrate, this adhesion coating in described side surface direction around this projection, and this adhesion coating is extended to the peripheral edge of this group body simultaneously by this weld pad, this terminal and this route line overlap;
Wherein this substrate is to be arranged on this adhesion coating and to extend this pedestal top; And
Wherein this projection extends into this opening and this through hole to reach this dielectric layer top, this pedestal extends this semiconductor element, this adhesion coating and this substrate below, and cover this projection, this lid, this adhesion coating and this substrate from the below, extend to simultaneously the peripheral edge of this group body.
7. semiconductor wafer group body as claimed in claim 6, it is characterized in that: this semiconductor element is one to comprise the LED packaging body of LED wafer, and be to utilize one first scolding tin to be arranged on this weld pad, and utilize one second scolding tin to be arranged on this lid, this semiconductor element utilizes this first scolding tin electrically connect to this weld pad, and utilizes this second scolding tin hot link to this lid.
8. semiconductor wafer group body as claimed in claim 6, it is characterized in that: this substrate is to keep at a distance with this projection and this pedestal, this adhesion coating contacts this projection and this dielectric layer in this breach, and contact this pedestal and this dielectric layer outside this breach, and this top of this lid and this projection is copper.
9. semiconductor wafer group body as claimed in claim 6 is characterized in that: this projection is flat-top cone cylindricality, and its diameter is upwards to this lid from this pedestal and successively decreases, and this top of this projection be circle, and this lid is rectangle.
10. semiconductor wafer group body as claimed in claim 6 is characterized in that: this projection is flat-top cone cylindricality, and its diameter is upwards to this lid from this pedestal and successively decreases, and this top of this projection be circular, and this lid is square.
11. semiconductor wafer group body as claimed in claim 6 is characterized in that: this projection and this adhesion coating are copline in this dielectric layer top, and this lid and this weld pad and this terminal are copline above this dielectric layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/616,773 US8067784B2 (en) | 2008-03-25 | 2009-11-11 | Semiconductor chip assembly with post/base heat spreader and substrate |
| US12/616,773 | 2009-11-11 | ||
| US12/616773 | 2009-11-11 |
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| Publication Number | Publication Date |
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| CN102064265A CN102064265A (en) | 2011-05-18 |
| CN102064265B true CN102064265B (en) | 2013-01-23 |
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| CN2010101452421A Expired - Fee Related CN102064265B (en) | 2009-11-11 | 2010-04-06 | Semiconductor chip assembly with post/base heat spreader and substrate |
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| TW (1) | TWI425599B (en) |
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| CN102202459A (en) * | 2011-05-27 | 2011-09-28 | 乐健线路板（珠海）有限公司 | PCB (printed circuit board) with metal micro radiator |
| CN102916107A (en) * | 2011-08-05 | 2013-02-06 | 柏腾科技股份有限公司 | Composite heating panel structure and method for applying the composite heating panel structure to package light emitting diode |
| US9140421B2 (en) * | 2011-08-12 | 2015-09-22 | Tsmc Solid State Lighting Ltd. | Lighting device for direct and indirect lighting |
| TWI451556B (en) * | 2011-11-04 | 2014-09-01 | 恆日光電股份有限公司 | Led package module |
| CN102403418A (en) * | 2011-11-09 | 2012-04-04 | 东莞勤上光电股份有限公司 | Manufacturing method of high-power LED radiating structure |
| TWI469395B (en) * | 2012-02-03 | 2015-01-11 | Lighten Corp | Light-emitting module |
| JP6720633B2 (en) * | 2016-03-29 | 2020-07-08 | セイコーエプソン株式会社 | Electro-optical device, electro-optical unit and electronic device |
| TWI643297B (en) * | 2016-12-20 | 2018-12-01 | 力成科技股份有限公司 | Semiconductor package having internal heat sink |
| CN208938956U (en) * | 2017-11-07 | 2019-06-04 | 台湾东电化股份有限公司 | Board structure |
| CN111048651B (en) * | 2019-12-27 | 2021-12-17 | 广州市鸿利秉一光电科技有限公司 | High-reflectivity UVLED substrate and production method |
| CN113205750B (en) * | 2021-04-01 | 2023-05-09 | 广州市联合创展科技股份有限公司 | Up-down floating type high-efficiency heat dissipation type display screen |
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| CN101192601A (en) * | 2006-11-30 | 2008-06-04 | 东芝照明技术株式会社 | Illumination device with semiconductor light-emitting elements |
| CN101546761A (en) * | 2008-03-25 | 2009-09-30 | 钰桥半导体股份有限公司 | High power light emitting diode module package structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4432275B2 (en) * | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | Light source device |
| EP1928026A1 (en) * | 2006-11-30 | 2008-06-04 | Toshiba Lighting & Technology Corporation | Illumination device with semiconductor light-emitting elements |
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- 2010-03-31 TW TW099109874A patent/TWI425599B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101192601A (en) * | 2006-11-30 | 2008-06-04 | 东芝照明技术株式会社 | Illumination device with semiconductor light-emitting elements |
| CN101546761A (en) * | 2008-03-25 | 2009-09-30 | 钰桥半导体股份有限公司 | High power light emitting diode module package structure |
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| Title |
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| JP特开2002-94122A 2002.03.29 |
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| CN102064265A (en) | 2011-05-18 |
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| TW201117332A (en) | 2011-05-16 |
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