CN101546761A - High power light emitting diode module package structure - Google Patents
High power light emitting diode module package structure Download PDFInfo
- Publication number
- CN101546761A CN101546761A CNA2009103011242A CN200910301124A CN101546761A CN 101546761 A CN101546761 A CN 101546761A CN A2009103011242 A CNA2009103011242 A CN A2009103011242A CN 200910301124 A CN200910301124 A CN 200910301124A CN 101546761 A CN101546761 A CN 101546761A
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- emitting diode
- light emitting
- high power
- package structure
- module package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
A high power light emitting diode module package structure at least comprises a substrate, a plurality of light emitting diodes and an insulated housing; wherein the substrate comprises a radiating base and multilayer line; the substrate is directly joined with the light emitting diode based on the assembly joining column raised on the radiating base, thereby effectively educing the heat source produced when running the light emitting diode; further, the multilayer line surrounding the assembly joining column can provide the winding for electrically connecting the assemblies in the module for strengthening the elasticity of the pattern design, thereby making a purpose of customized module, and having high reliability, high design elasticity, high thermal diffusivity and low cost.
Description
Technical field:
The present invention relates to a kind of high power light emitting diode module package structure, refer to a kind of radiating requirements especially at high-power die, and the modularized light emitting diode encapsulating structure.
Background technology:
The continuous lifting with light-emitting diode chip for backlight unit power popularized along with photovoltaic, the multi-chip light emitting diode modularization becomes the new trend of electrical lighting gradually, therefore the substrate that electrically connects as the light-emitting diode multi-chip module, its coiling ability and heat dissipation characteristics become one of key factor whether new product can develop smoothly then.
The heat-radiating aluminum plate of early-stage development owing to contain resin below the light-emitting diode component position, therefore produces the problem that the integral heat sink poor effect is arranged.See also shown in Figure 3ly, it is the high heat-conducting type light emitting diode module package structure generalized section of known technology.As shown in the figure: this high heat-conducting type light emitting diode module package structure 5 comprises an aluminium base 50, several High Power LED crystal grain 60 and an insulation shell 70.Wherein attach a nonconducting conductive adhesive film 5 on this aluminium base 50
1, on this individual layer circuit and be formed with several assembly connection pads 52 and several electrical connection pads 53 in series or in parallel with each other; This insulation shell 70 is placed in the periphery of many assembly connection pads 52 and those electrical connection pads 53; Those High Power LED crystal grain 60 are fixed on those assembly connection pads 52; and by beating gold thread 62 modes; with two electrodes 61 on this LED crystal particle 60 respectively with corresponding electrical connection pad 53 conductings; then cover, to protect those High Power LED crystal grain 60 and those gold threads 62 with a transparent resin 71.
Yet, by above-mentioned encapsulating structure 5 as can be known, with the made light-emitting diode (LED) module of conventional aluminum substrate, the heat that is produced during the running of its chip needs to conduct to via this assembly connection pad 52 and this conductive adhesive film 51 this aluminium base 50 and does to store or loose and overflow, but wherein the conductive coefficient of this conductive adhesive film 51 is little far beyond the common metal material, and then the problem that causes whole heat-conducting effect not good is arranged; In addition, the conventional aluminum substrate is in the doubt of the reliability of high temperature reflow, and the structural limitations of individual layer circuit, also is one of its major defect.
Based on the specific demand of light-emitting diode (LED) module, so there is other can provide the multilager base plate manufacturing technology of preferable heat radiation approach to be developed one by one to heat dissipation characteristics.A kind of printing conductive elargol that utilizes is promptly proposed as connecting upper and lower two-layer mode as the Toshiba of Japanese firm, so that a conduction and the heat conduction platform of putting chip to be provided, as U. S. application patent the 5865934th and No. 7419382, and see also shown in Fig. 4 a to Fig. 4 d, it is the encapsulating structure generalized section of another kind of known technology.Shown in Fig. 4 a, at first be to utilize printing and roasting mode, form several conductive silver projections 81 on a Copper Foil 80; Then force in a preimpregnation cloth (Prepreg) 82, shown in Fig. 4 b, make those conductive silver projections 81 thorns pass this preimpregnation cloth 82 after; Another sheet Copper Foil 83 being pressed on this preimpregnation cloth 82 is revealed on this preimpregnation cloth 82 conductive silver projection 81 outward, shown in Fig. 4 c with several again; Form a line layer 84 at last, shown in Fig. 4 d.
Though can upper and lower layer be electrically conducted via those conductive silver projections 81 with the formed line layer 84 of above-mentioned pressing mode; Yet, because of its conductive silver projection 81 is not one-body molded with copper wire, so in practical application, will produce the problem that causes reliabilitys such as separating because of thermal expansion.In addition,, also or use other material,, make it become the cooling base of accepting chip, problems such as processing procedure complexity and fine ratio of product be not good are also arranged in practical application as copper bump etc. if desire extends this technology and strengthen this conductive silver projection 81 areas.
In addition, the mode that also has another kind of heat-radiating substrate to form sees also shown in Fig. 5 a to Fig. 5 d, and it is the encapsulating structure generalized section of another known technology.Shown in Fig. 5 a, a thick copper coin 90 at first is provided, and utilizes etching mode, on the one side of this thick copper coin 90, form several copper bumps 901; Then be coated with and toast an insulating material 91 thereon, shown in Fig. 5 b; And on this insulating material 91, form a metal copper layer 92 again, shown in Fig. 5 c; Form a line layer 93 at last, shown in Fig. 5 d.
Though the assembly connection pad with above-mentioned heat-radiating substrate is identical or integrated metal with heating panel, its circuit is directly to grow up on the insulating material 91 by slaking, and therefore the not good integrity problem that waits of adhesive force is arranged; In addition, made in this way light-emitting diode (LED) module is except the processing procedure costliness, and the restriction of its individual layer circuit coiling is still one of bottleneck that causes the modular design maximum.
The problem of to sum up stating known technology and being met with is so it is required when reality is used generally can't to meet the user.
Summary of the invention:
Technical problem to be solved by this invention is: at the radiating requirements of high-power die, and the modularized light emitting diode encapsulating structure, a kind of high power light emitting diode module package structure is provided, can improve the radiating effect of integral module.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of high power light emitting diode module package structure comprises substrate, number light-emitting diode and insulation shell at least; This substrate comprises cooling base, and this cooling base comprises a smooth base and an at least one assembly bond post that is raised on this base; This light-emitting diode closes admittedly on this assembly bond post, and has electrode and electrical pin; This insulation shell involution is on the substrate of module; Be characterized in: described substrate also comprises multilayer line, and this multilayer line is that core is pressed on this base with this protruding assembly bond post, and and this assembly bond post between with the insulating barrier fluid-tight engagement; And electrode on this light-emitting diode or electrical pin and this multilayer line are electrically connected.
So, the light-emitting diode (LED) module of this tool assembly bond post and multilayer line, the thermal source that is produced in the time of can effectively chip being operated with this assembly bond post are directly derived from the cooling base of module, can improve the radiating effect of integral module; And can strengthen the elasticity of design by the coiling ability of this multilayer line, to reach the purpose of customized module; And it is lower that this structure has high-reliability, high design flexibility, high-cooling property and a cost.
Description of drawings:
Fig. 1 is the light emitting diode module package structure generalized section of a preferred embodiment of the present invention.
Fig. 2 is the light emitting diode module package structure schematic perspective view of a preferred embodiment of the present invention.
Fig. 3 is known High Power LED module encapsulation construction generalized section.
Fig. 4 a is another kind of known encapsulating structure generalized section one.
Fig. 4 b is another kind of known encapsulating structure generalized section two.
Fig. 4 c is another kind of known encapsulating structure generalized section three.
Fig. 4 d is another kind of known encapsulating structure generalized section four.
Fig. 5 a is another known encapsulating structure generalized section one.
Fig. 5 b is another known encapsulating structure generalized section two.
Fig. 5 c is another known encapsulating structure generalized section three.
Fig. 5 d is another known encapsulating structure generalized section four.
Label declaration:
Light emitting diode module package structure 1 substrate 10
The line layer 15b of lower floor insulating barrier 16
Hole 17 electrical connection pads 18 electrically conduct
Main, passive component 22 elargol 23
Light emitting diode module package structure 5 aluminium bases 50
Conductive adhesive film 51 is put brilliant connection pad 52
Electrode 61 gold threads 62
Line layer 84 thick copper coins 90
Embodiment:
The present invention is a kind of high power light emitting diode module package structure, and this light emitting diode module package structure comprises a substrate, a light-emitting diode and an insulation shell at least.
Aforesaid substrate comprises a cooling base and a multilayer line, comprise a base and at least one assembly bond post that is raised on this base on this cooling base, the surface of this assembly bond post is less than the surface of this base, system directly engages with this light-emitting diode with this assembly bond post, this multilayer line then with this protruding assembly bond post be core be pressed on this base and to around extend, and and this assembly bond post between combine closely and do not have any slit or other material with an insulating barrier.Wherein, the surface of this assembly bond post is less than the surface of this base; This multilayer line can comprise one or more layers of circuit, and can radium-shine electroplating hole, mechanical plating hole or the printing conductive glue upper and lower line layer that electrically conducts.
This light-emitting diode closes admittedly on this assembly bond post, and the electrode on this light-emitting diode or electrically pin and this multilayer line are electrically connected.
This insulation shell in order to the involution said modules on module substrate.The above constitutes one brand-new and be the light emitting diode module package structure of high power type.
When the present invention in when configuration, the material of above-mentioned cooling base can be copper, nickel, iron, aluminium, copper alloy or carborundum (SiC), also can be pottery, as aluminium nitride (AluminumNitride, AlN) or aluminium oxide Heat Conduction Materials such as (Alumina), and the assembly bond post of this cooling base and base can be integrated material, also can be non-integrated material, and this assembly bond post surface has a metallic film pad, and can be the several metal levels that comprise nickel/gold or nickel/silver, and arrange on the surface of this assembly bond post and the surface that can be total to flat form (being the copline form) or have a difference in height form and this multilayer line, and can be electric connection each other or electrically do not connect.
See also Figure 1 and Figure 2, the present invention is a kind of high power light emitting diode module package structure, and in a preferred embodiment, this light emitting diode module package structure 1 comprises a substrate 10, several LED crystal particle 20 and an insulation shell 30 at least.
Aforesaid substrate 10 comprises a cooling base 11, and this cooling base 11 comprises a smooth and seamless base 12, and several protruding assembly bond posts 13, and those assembly bond post 13 surfaces have a metallic film pad 14, can paste the interface of chip in order to conduct; In addition, this substrate 10 still comprises the upper layer circuit layer 15a of a multilayer line and layer line layer 15b and an insulating barrier 16 once, and be to link between this upper and lower line layer 15a, 15b with the hole 17 that electrically conducts, and the line layer 15a of the superiors of this multilayer line has several electrical connection pads 18, can be in order to connecting the electrode 21 on those LED crystal particle 20, and other main, passive component 22.Wherein, this multilayer line is that the assembly bond post 13 with projection is a core, entirely be pressed on this base 12 and to around extend, and the insulating barrier 16 of this multilayer line is between this line layer 15, and and this cooling base 11 on base 12 and assembly bond post 13 between be and combine closely and do not have any slit.In wherein, the copper metal material that this cooling base 11 can be one of the forming; This insulating barrier 16 can be one and contains the insulating material that glass fibre and epoxy resin blend together; This hole 17 that electrically conducts can be radium-shine electroplating hole, mechanical plating hole or printing conductive glue; Those electrical connection pads 18 can be double layer of metal, and as nickel/silver, and this metallic film pad 14 also can be the nickel/gold of double layer of metal or the nickel/palladium of three-layer metal/gold.
Those high-power LED crystal particle 20 stick in respectively on several assembly bond posts 13 by an elargol 23 that contains conducting metal, and via electrode 21 on gold thread 24 those LED crystal particle 20 of connection and the electrical connection pad 18 on this substrate circuit layer 15.In the present invention, this LED crystal particle 20 also can be the packaging body of having finished encapsulation, and connects those LED crystal particle 20 and also can be common gold with the mode of those assembly bond posts 13 and engage.
This insulation shell 30 coats those LED crystal particle 20 on this substrate 10, as protection those LED crystal particle 20, this gold thread 24 and effects such as optically focused or astigmatism.In wherein, this insulation shell 30 comprises to fill out and invests in it and be covered in transparent resin material 31 on those LED crystal particle 20, this gold thread 24 and this substrate 10, an and retaining piece 32 that is centered around many LED crystal particle 20 and gold thread 24 peripheries, and this retaining piece 32 and can be plastics or the material of metal.
In present embodiment, the substrate 10 of above-mentioned multilayer module comprises this cooling base 11, and because its base 12 can be an one-body molded copper metal with this assembly bond post 13, so can be effectively with the heat conduction approach of conventional technique known, by the mode that conducts to aluminium base originally via heat-conducting resin, be reduced to directly and conduct to large-area base 12, therefore, can effectively solve problems such as the whole heat-conducting effect of known technology is not good by this assembly bond post 13.In addition, the line layer 15 of this multilayer module substrate 10 is several continuous or discontinuous circuits in series or in parallel with each other, therefore can be used as and connect several High Power LED crystal grain 20 and other is main, passive component 22 is required coiling, more can be by the electrical coiling ability of multilayer line, strengthen the elasticity of design, to reach the purpose of customized module.
By this, by the invention described above one preferred embodiment as can be known, use High Power LED module package interposed structure of the present invention, the thermal source that is produced in the time of can effectively High Power LED being operated is derived from cooling base, and can strengthen the elasticity of design by the coiling ability of multilayer line, to reach the purpose of customized module, for having high-reliability, high design flexibility, high-cooling property and tool low-cost light-emitting diode module encapsulation construction.
In sum, high power light emitting diode module package structure of the present invention, can effectively improve the various shortcoming of prior art, the thermal source that is produced in the time of can effectively High Power LED being operated is derived from cooling base, and can strengthen the elasticity of design by the coiling ability of this multilayer line, reaching the purpose of customized module, so make the present invention can more progressive, more practical, more meet user institute must, really meet the important document of application for a patent for invention, proposed patent application in accordance with the law.
Claims (17)
- [claim 1] a kind of high power light emitting diode module package structure comprises substrate, number light-emitting diode and insulation shell at least; This substrate comprises cooling base, and this cooling base comprises a smooth base and an at least one assembly bond post that is raised on this base; This light-emitting diode closes admittedly on this assembly bond post, and has electrode and electrical pin; This insulation shell involution is on the substrate of module; It is characterized in that: described substrate also comprises multilayer line, and this multilayer line is that core is pressed on this base with this protruding assembly bond post, and and this assembly bond post between with the insulating barrier fluid-tight engagement; And electrode on this light-emitting diode or electrical pin and this multilayer line are electrically connected.
- [claim 2] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: the surface of described assembly bond post and the surface of this multilayer line are for being total to flat form.
- [claim 3] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: the surface of described assembly bond post and the surface of this multilayer line are the form with difference in height.
- [claim 4] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: the surface of described assembly bond post is less than the surface of this base.
- [claim 5] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: the surface of described base is smooth seamless form.
- [claim 6] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described assembly bond post and this multilayer line electrically connect.
- [claim 7] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described assembly bond post and this multilayer line be not for electrically being connected.
- [claim 8] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described assembly bond post and this base are formed in one.
- [claim 9] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described assembly bond post and this base are non-one-body molded.
- [claim 10] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described assembly bond post surface has a metallic film pad, and for comprising several metal levels of nickel/gold or nickel/palladium/gold.
- [claim 11] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described multilayer line comprises one or more layers of circuit.
- [claim 12] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described multilayer line comprises the upper and lower line layer that electrically conducts with radium-shine electroplating hole, mechanical plating hole or printing conductive glue.
- [claim 13] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described cooling base is made by copper, nickel, iron, aluminium, copper alloy or carborundum.
- [claim 14] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: the material of described cooling base is pottery, and is the Heat Conduction Material of aluminium nitride or aluminium oxide.
- [claim 15] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described light-emitting diode is crystal grain or the packaging body of having finished encapsulation.
- [claim 16] high power light emitting diode module package structure as claimed in claim 1 is characterized in that: described insulation shell comprises the retaining piece that is centered around several light-emitting diodes and lead periphery and fills out and invests in it and be covered in transparent resin material on this light-emitting diode, lead and the substrate.
- [claim 17] high power light emitting diode module package structure as claimed in claim 16 is characterized in that: described retaining piece is made by plastics or metal.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6474808P | 2008-03-25 | 2008-03-25 | |
| US61/064,748 | 2008-03-25 | ||
| US61/071,072 | 2008-04-11 | ||
| US61/071,589 | 2008-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101546761A true CN101546761A (en) | 2009-09-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009103011191A Expired - Fee Related CN101553094B (en) | 2008-03-25 | 2009-03-25 | A method for manufacturing a circuit board provided with an embedded typed metal conduction column |
| CNA2009103011242A Pending CN101546761A (en) | 2008-03-25 | 2009-03-25 | High power light emitting diode module package structure |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009103011191A Expired - Fee Related CN101553094B (en) | 2008-03-25 | 2009-03-25 | A method for manufacturing a circuit board provided with an embedded typed metal conduction column |
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| CN (2) | CN101553094B (en) |
| TW (1) | TW200941659A (en) |
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| US5839188A (en) * | 1996-01-05 | 1998-11-24 | Alliedsignal Inc. | Method of manufacturing a printed circuit assembly |
| JP2001036245A (en) * | 1999-07-23 | 2001-02-09 | Yamaichi Electronics Co Ltd | Manufacture of wiring board |
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| CN1212115C (en) * | 2002-07-25 | 2005-07-27 | 无锡健特药业有限公司 | Water soluble vitamin product coated with micro capsule and its producing method |
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2008
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2009
- 2009-03-25 CN CN2009103011191A patent/CN101553094B/en not_active Expired - Fee Related
- 2009-03-25 CN CNA2009103011242A patent/CN101546761A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101553094B (en) | 2011-10-12 |
| TW200941659A (en) | 2009-10-01 |
| CN101553094A (en) | 2009-10-07 |
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