CN104103741A - Integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as radiator, and preparation method of LED light source device - Google Patents
Integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as radiator, and preparation method of LED light source device Download PDFInfo
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- CN104103741A CN104103741A CN201410311972.2A CN201410311972A CN104103741A CN 104103741 A CN104103741 A CN 104103741A CN 201410311972 A CN201410311972 A CN 201410311972A CN 104103741 A CN104103741 A CN 104103741A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000000919 ceramic Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 33
- 229920003023 plastic Polymers 0.000 claims abstract description 7
- 239000004033 plastic Substances 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
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- 230000008901 benefit Effects 0.000 description 8
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- 229910052802 copper Inorganic materials 0.000 description 6
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- 238000000605 extraction Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as a radiator, and a preparation method of the LED light source device. The LED light source device comprises LED chips, the radiator and a plastic packaging part, wherein the radiator is made of the silicon carbide ceramic; and the LED chips are packaged on the radiator by the plastic packaging part. The LED light source device adopts an integral chip and radiator packaging and vertical lamp appearance integration technique, and is automatically integrated, so that a packaging technology is simplified, and a packaging structure is changed; and heat conduction and radiation are integrated, so that an intermediate heat conduction link is reduced, and the reliability of product quality is improved.
Description
Technical field
The invention belongs to LED lighting source field, be specifically related to a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging and preparation method thereof.
Background technology
In recent years, under advocating of global energy-saving and emission-reduction and national governments relevant policies are supported, LED illumination is developed fast.At present, the light source of new generation attracting most attention as the whole world, because it has that the life-span is long, volume is little, the advantage such as energy-conservation, highlighted, low-heat, fast response time, antidetonation, pollution-free, recyclable recycling, " green illumination light source " that the 21 century of being known as is the most promising.LED large-scale application is an inevitable trend in general lighting.As the LED encapsulation of forming a connecting link in LED industrial chain, in whole industrial chain, play a part crucial.For encapsulation, its key technology is the light how extraction LED chip as much as possible sends within the scope of limited cost after all, reduces packaging thermal resistance simultaneously, improves reliability.In encapsulation process, encapsulating structure and packaged type account for major influence factors.Along with the high light efficiency of LED, power, high reliability and development cheaply, requirement to encapsulation is also more and more higher, and LED is encapsulated in while taking into account the aspect such as lighting angle, photochromic uniformity and must meets and have sufficiently high optical efficiency and the luminous flux got on the one hand; On the other hand, also the most important thing is, encapsulation must meet the heat radiation requirement of chip simultaneously, and then promotes the LED life-span.Therefore, the encapsulating materials such as chip, fluorescent material, radiator and corresponding encapsulating structure, packaged type and treat development innovation, to improve heat-sinking capability and the light extraction efficiency of LED.
Domestic LED industry technology level: at present, LED packing forms is varied, but entirety is continued to use semiconductor packaging process technology, to adapt to different application scenarios, different overall dimension, different heat sink conception and illumination effects.Main packing forms comprises: the types such as direct insertion encapsulation (LAMP-LED), surperficial note dress encapsulation (SMD-LED), power-type encapsulation (High-Power-LED), chip on board encapsulation (COB-LED).And COB encapsulating structure is the LED general illumination industry main flow scheme that at present domestic and international industrial circle is tending towards approval.No matter that above encapsulating structure form is, all more or less exists chip and integrate brightness, colour temperature and be in harmonious proportion and the technical problem of system combination, also exist simultaneously hot interface too much, thermal resistance is large, reliability is not high, easily occur light decay and dead lamp problem.With regard to the current and following market demand, backlight and illumination will become mainly application.With regard to the quality of LED device, more and more higher to the requirement in LED reliability, light efficiency, life-span etc., on a small scale, low-level encapsulation can not meet the quality demand of application to LED.For this reason, whole world LED general illumination industrial circle is all in the production decision of making great efforts to seek high heat-dissipation packaging structure.
LED encapsulation present situation and deficiency; In general, the protection that provides chip enough is provided the function of encapsulation, prevents chip long-term exposure or mechanical damage and lost efficacy in air, to improve the stability of chip.For LED encapsulation, not only to there is good light to take out efficiency, but also will have good thermal diffusivity.Heat dissipation problem has become the key factor of technical parameters such as affecting LED life-span, light efficiency, light decay.The material that is used at present dispelling the heat mainly contains aluminium, engineering heat conduction plastic cement, pottery etc.Using aluminium base as COB encapsulating material, because its encapsulating structure thermal resistance is larger, reliability is not high, easily there is light decay and dead lamp phenomenon, be a kind of mode of just rising recently and utilize engineering plastic to realize heat radiation, but its thermal conductivity is low, and cost is also relatively high at present, as for aluminium oxide ceramic substrate, although thermal resistance is very low, be one of ideal material of COB encapsulation, because processing is difficult for, cost is high, only has the carrier of part light source wafer to use.LED in actual applications, people are in order to lower LED junction temperature, in the time of design LED light fixture, no matter be by traditional SMD encapsulation or by the light source of COB metal substrate encapsulation, finally all must mix heat radiator dedicatedly, object is heat energy to be first directed to radiator (aluminium radiating fin, heat-dissipating casing etc.) from metal substrate be diffused into air by radiator again, therefore causes LED light fixture solid interface too much, produce very large contact heat resistance, had a strong impact on LED light fixture radiating effect.Except the problems referred to above, there is standardization issue in LED light fixture, and all encapsulation manufacturer cannot dock with the standard of illumination finished product factory.In order to solve high-power LED encapsulation heat dissipation problem, just must be in package design process, the less packing forms of adopting process as far as possible, simplify encapsulating structure simultaneously, reduce as far as possible calorifics and optical interface, to reduce packaging thermal resistance, improve light extraction efficiency, extend the useful life of chip.
Summary of the invention
On basis heat dispersion being affected at comprehensive analysis radiator structure, heat sink material and packing forms, the present invention has researched and developed a kind of new encapsulation technology, i.e. COR (Chip on the radiator) integral packaging structure.This COR integral packaging version, adopts chip+radiator integral packaging and light fixture profile vertical integration technology, has a style of one's own.Not only simplify packaging technology, changed encapsulating structure, and by heat conduction, heat-radiating integrated, reduced hot conduction intermediate link, promoted operational efficiency, reduced production costs, improved the reliability of product quality.Not only product environmental protection, and production process is also clean, noise is low, pollution-free, the LED ball bubble of its production, Down lamp, shot-light, and the product such as large and medium-sized bulkhead lamp capable, be widely used in the public illuminations such as indoor and outdoor.
The Chinese implication of COR (Chip on the radiator) is explained: the chip on radiator.LED bare chip is directly pasted to the integrated area source technology of on radiating element (integral packaging).This technology has been rejected support concept and substrate concept, and support and metal substrate have not only been saved in electroless plating, without Reflow Soldering, without paster operation, and has saved the complicated manufacture craft for processing metallic base plate for packaging insulating barrier.Therefore, operation reduces 1/3rd, cost savings 1/3rd, and thermal resistance also reduces 1/3rd, and radiating efficiency improves 1/3rd.
COR specific constructive form, that n LEDs bare chip is directly pasted on radiating element, and wire/bonding wire is directly welded in (FPC) flexible circuit board, see through again the technology of sealing, effectively encapsulation step is transferred on radiating element, and directly form a kind of Novel LED light source device, make heat conduction, heat-radiating integrated.Compared with the COB structure encapsulating with metal material, not only save the substrate that metal material is made, made the thermal resistance on heat transfer path reduce 30%, and saved the complicated manufacture craft for processing metallic base plate for packaging insulating barrier, production cost has declined 30%, and reliability promotes one times.Reduce a large amount of PCB processing procedures with strong chemical contamination with regard to whole light fixture.
As the material of preparing radiating element, except possessing basic high heat conduction and arranging circuit function, also require to there is certain insulation, heat-resisting, the coefficient of expansion that matches.And thyrite not only possesses outside the performances such as high cooling efficiency, heat-resisting electricity, coefficient of expansion coupling, be also expected to have breakthrough in the optical property of packaging simultaneously, realize the high light flux LED encapsulation of point, face combination.The present invention adopts silicon carbide ceramics to make radiator, takes full advantage of the advantage of thyrite.
Its main component of silicon carbide ceramics heat sink material is taking carborundum as main body and is aided with multiple or the combining of one to two kind of super-high heat-conductive filler wherein such as nano-silicon nitride magnesium, nano aluminum nitride, high sphericity aluminium oxide.According to the particle diameter of every kind of material, form, doping mark, uses the different particle of particle diameter, and gap between the each particle diameter of filling to greatest extent, is formed the thermally conductive pathways network in system.
Further, in the radiator made from silicon carbide ceramics of the present invention, inside is provided with thermal hole, has increased the convection channel of convective media air, is conducive to distributing of heat;
Further, the radiator low side made from silicon carbide ceramics of the present invention is provided with cavity, has strengthened and the contact-making surface of convective media air, forms cold and hot air exchange chamber, makes heat energy rapid exchange fluid in convective media air moving, has accelerated the diffusion of heat.
COR integral packaging version is the new technology forming after to the Depth Study of COB encapsulating structure.This technology has adopted the radiator of preparing using thyrite as the direct supporting body of LED chip.And by the independent exploitation core software and hardware technology that supporting software program and research and development are made voluntarily professional tool form with it, by heat conduction, heat-radiating integrated, reduce heat conduction intermediate link; Improve radiating efficiency; Increase the life-span of chip; Reject metal substrate and its complicated procedure for processing, met heat radiation requirement and the high efficiency integrated requirement of LED industry to chip, creatively solved the technical bottleneck of the heat radiation difficulty that high-power LED encapsulation structure causes.
LED street lamp as above in existing high-power 50W, bulkhead lamp capable, for the needs that dispel the heat, only the weight of special-purpose metal radiating element just reaches tens jin.As adopting structure of the present invention, LED light fixture overall weight can alleviate more than 50%.
The technical merit that COR reaches: COR integral packaging version is a kind of novel package structure technology of being bold in innovation on the basis of existing COB encapsulating structure and developing.This version is by carrying out reliable thermal design to LED encapsulating structure, take and implement effective thermal control measure, the high light efficiency fully throwing light in conjunction with indoor universal. free from glare. flicker free. the high aobvious handling characteristics referring to, carry out comprehensive integration from COR integral packaging version to light fixture profile total system, by heat conduction, heat-radiating integrated, greatly simplified production process, reduce production cost, reduce hot conduction intermediate link, improved light extraction efficiency, extended the useful life of chip.For China has opened up the new world in LED encapsulation field, bring up exclusive novel package structure form.
Brief description of the drawings
Fig. 1 is existing aluminium base COB encapsulating structure schematic diagram
Fig. 2 is existing copper substrate COB encapsulating structure schematic diagram
Fig. 3 is COR encapsulating structure schematic diagram of the present invention
Fig. 4 is COR encapsulation plane graph of the present invention
Fig. 5 is COR encapsulation profile of the present invention
Drawing reference numeral explanation
1, LED chip
2, fluorescent glue
3, radiator
4, bonding line
5, enclosure wall glue
6, wiring board
7, thermal hole
8, cold and hot air exchange chamber
11, insulating barrier
12, aluminium base
13, copper base
Embodiment
Below in conjunction with accompanying drawing, the preparation method of a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging of the present invention is elaborated:
One, the preparatory stage: sintering is prepared silicon carbide ceramics radiating element
This stage can be divided into following steps: 1, Mold Making, 2, proportioning, be uniformly mixed material, 3, base, 4, sintering.
The existing silicon carbide ceramics manufacture craft of this stage process reference: in silicon-carbide particle mixture; (the present embodiment can adopt 60-100 order model silicon carbide powder) adds 5%～10% super-high heat-conductive filler and certain proportion inorganic binder (montmorillenite); with certain temperature schedule reaction-sintered; hard carborundum is combined, form fine and close network configuration.To reach effective heat conduction, obtain high heat conductive body system.
The principal element that affects high-temperature structural ceramics product strength and thermal conductivity is pore opening and quantity.Pore in thyrite in the present embodiment is filled completely, thereby intensity and thermal conductivity improve greatly.
The present embodiment can adopt following two kinds of sintering processings to prepare silicon carbide ceramics:
1, silicon carbide reaction-sintered: add metallic silicon power and carbon in carborundum, bury carbon at 1450 DEG C and burn till, silica flour is reacted with carbon and generate low form β-SiC, former silicon-carbide particle is combined.Another kind method: directly react generation silicon carbide articles by carbon with metallic silicon,, with carbon or carbon and carborundum forming, bury silicon and burn till.Two methods all can be made into well behaved silicon carbide ceramic product.Owing to generally containing free silica 8%～15% and a small amount of free carbon in goods, make its serviceability temperature lower than below 1400 DEG C.Its conductive coefficient, resistance to impact are good, but intensity, hardness, corrosion-resistant.Silicon carbide reaction-sintered goods size before and after sintering is almost constant, therefore, after moulding, can be processed into arbitrary shape and size, is especially applicable to product extensive, complicated shape.
2, recrystallized silicon carbide pottery: through silicon carbide micro-powder and the Ultramicro-powder of purified treatment, sneak into a certain amount of bonding agent, burn till at 2200～2400 DEG C after moulding.Recrystallization between silicon-carbide particle, and directly combination, carborundum content reaches 99%.Above various combination phase silicon carbide ceramics, recrystallized silicon carbide goods, have higher heat-state mechanical strength, thermal conductivity, resistance to heat shocks and non-oxidizability
The present embodiment preferably has the silicon carbide ceramics of following feature: density ≮ 3.0g/cm3 (density), the porosity ≮ 0.1% (porosity), intensity be 250Mpa (normal temperature) and 250Mpa (1300 DEG C) (hardness), thermal coefficient of expansion is 4.5 × 10-6/K (Coefficient of thermal expansion), pyroconductivity is 150W/m.k (coefficient of thermal conductivity), and specific heat is 1.7 × 10j/kg DEG C (specific heat).
This stage adopts corresponding mould, sinters carborundum into required form, in this example, silicon carbide ceramics sinters column type into, inside is provided with and connects some thermal holes of both ends of the surface, has increased the convection channel of convective media air, and the conduction that is conducive to accelerate heat is distributed.One end of this external cylinder is provided with a cavity, has increased and the contact-making surface of convective media air, forms the switch room of cold and hot convective media air, by with the continuous exchange of convective media air, be conducive in time heat be taken in air, reach heat radiation object.
Two, COR encapsulated phase:
The first step: cleaning, smooth radiating element (chip mount pedestal).In the technological process of COR, because silicon carbide ceramics is stained with carborundum residue and device surface crystal particle diameter is not of uniform size in sintering process, easily causes increasing of bad product and scrap in the operation such as fixing circuit board and die bond and bonding wire of laying of next stage; In order to address this problem, with regard to must be conscious with professional equipment, artificial etc. to cleaning on radiating element surface, smooth.
Second step: blue or green glue.Adopt point gum machine that appropriate silver is starched to point just in FPC flexible circuit board.Till being heat-treated to wiring board and being securely fixed in spreader surface.
The 3rd step: die bond.Adopt the die bond equipment of region-wide vision positioning system, chip is fixed on to position corresponding to FPC flexible circuit board with heat conduction elargol.
The 4th step: dry.To glue nude film and put into standing a period of time of heat-circulation oven constant temperature, also can spontaneous curing (time is longer).
The 5th step: nation's fixed (routing).Adopt spun gold bonding equipment that wafer is carried out to bridge joint with pad spun gold corresponding on FPC plate, i.e. the lead of COR welding.
The 6th step: before measurement.Use special detection tool (high precision stabilized voltage power supply) to detect COR light source, or adopt line sight surveymeter to detect, underproof light source is reprocessed again.
The 7th step: sealing.Adopt automatic adhesive sealing machine, carry out outward appearance encapsulation according to customer requirement.
The 8th step: solidify.The integrated light source device of sealing glue is put into heat-circulation oven constant temperature and leave standstill, can set as requested different drying time (conventionally needing more than 4 hours).
The 9th step: survey afterwards.Packaged integrated light source device is carried out to electric performance test with special testing tool again, and quality separates the sheep from the goats.
Compared with other encapsulation technology, COR Techniques For Reducing cost, saved space, reduced technique, improved radiating efficiency, therefore will be used widely in semiconductor packages field.
COR innovation point and effect and advantage:
1) COR integrative packaging version, has formed a whole set of and has improved complete commercial processes, with high content of technology, maturation.Be similar to the COB technique of SMT industry, with the comparison of metal material real estate light-source encapsulation form, rejected metal material substrate, by heat conduction, heat-radiating integrated, reduced hot conduction intermediate link.Its heat conduction, radiating effect are better, and reliability is higher, and efficiency is higher, and cost is lower.This encapsulating structure form will become the mainstream technology of the following room lighting light-source encapsulation of LED.
2) COR integrative packaging version, is complete independent research, independently creative.From control with raw material to finished product detection technique, be different from stent-type, SMD-LED formula technique completely.The integrated advantage of collection COB packing forms, its operation greatly reduces, and has reduced production cost, has improved production efficiency.
3) COR integrative packaging version, not only product energy-conserving and environment-protective, radiationless without mercury, the also energy-saving and environmental protection of its production process, have reduced the highly energy-consuming of electroplating technology in PCB technique, and, there is not the highly energy-consuming of electricity-saving lamp workshop in high pollution process.
4) adopting silicon carbide ceramics is radiating element prepared by raw material, has not only reduced cost, and has promoted the thermal conductance efficiency of chip.Compare with metal aluminum substrate encapsulating structure form of the same type, cost reduction 30%;
Radiator prepared by other metal materials of the density ratio of silicon carbide ceramics is lighter, and particularly the own wt of high-power LED lamp is significantly alleviated.
Silicon carbide ceramics is with the relation of its special micro-Cavitated structure, make the surface area of radiator compare metal heat sink and have more approximately 30% hole, thereby had larger contact area with convective media air, can within the same unit interval, take away more heat.
Can verify thermal radiation benefit according to experiment: SiC> copper > aluminium, SiC heat emissivity coefficient is 0.88, and copper heat emissivity coefficient is 0.1, and aluminothermy radiation coefficient is 0.1.The heat loss through radiation characteristic that silicon carbide ceramics is better than 8.8 times, metal material with it, makes the far super metal material that can only passive heat radiation of its active heat removal usefulness.
The absorption thermal capacitance of silicon carbide ceramics is compared metallic aluminium and is wanted high, compares more relatively lowly with copper, but the cost of copper is high.
Be different from metal material perishable, oxidizable, be easily subject to the variation of temperature and expand with heat and contract with cold, thereby causing sticker to come off, fixing unstable, the problems such as heat dispersion reduction, silicon carbide ceramics radiator is in anticorrosion, anti-oxidant, cold-and-heat resistent impacts these several respects and has absolute advantage, can under high and low temperature environment, keep stable formalness, maintain stable heat dissipation simultaneously
Just based on like this outstanding smooth performance and integrative packaging structure, make from chip to radiator heat conduction effect to air again improve 30%.
5) COR integrative packaging version is by the professional tool of independent research and making and supporting software program complete independently with it.Reduce repeatedly point, improved an accuracy and reliability, improved operating efficiency; Increased the work area of workpiece, improved integrated degree, make LED light fixture production, install simpler and convenient.
6) different from stent-type, SMD dot matrix illumination effect, be to adopt the mode combining between multiple chips string combination and light source device to design.For different product application, different drive conditions, when product is optimized, only needs to revise on-link mode (OLM) and the increase between chip or reduces light source device quantity, just can achieve the goal.Make area source go out light effect and obtain higher more perfect embodiment, closer to natural daylight, and reduced glare effect.
7) adopting silicon carbide ceramics is radiating element prepared by raw material, and the performance advantage of its insulation, becomes obtaining of associated lamp Safety Approval and be more prone to.Also make line related (driving module) design become lighter, particularly for relevant safety requirements part wherein simultaneously.
More than that the present invention has been carried out to exemplary description; obvious realization of the present invention is not subject to the restrictions described above; as long as the various improvement that adopted technical solution of the present invention to carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all in protection scope of the present invention.
Claims (8)
1. the LED light source device taking silicon carbide ceramics as radiator integral packaging, is characterized in that, comprises LED chip, radiator, Plastic Division, and described radiator is made up of silicon carbide ceramics, and described LED chip is encapsulated on described radiator by described Plastic Division.
2. a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging according to claim 1, it is characterized in that, described silicon carbide ceramics is taking carborundum as main body and be aided with heat filling and make, and described heat filling is one or more combinations in nano-silicon nitride magnesium, nano aluminum nitride, high sphericity aluminium oxide etc.
3. a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging according to claim 1, it is characterized in that, described silicon carbide ceramics pyroconductivity is 150W/m.k, and specific heat is 1.7 × 10j/kg DEG C, thermal coefficient of expansion is 4.5 × 10-6/K, the porosity ≮ 0.1%.
4. a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging according to claim 1, it is characterized in that, described Plastic Division is formed by enclosure wall glue and fluorescent glue, and the wire bonds of described LED chip in the circuit board, then is encapsulated on described radiator by described Plastic Division.
5. according to a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging described in claim 1-4 any one, it is characterized in that, described radiator inside of being made up of silicon carbide ceramics is provided with the thermal hole that connects upper and lower section.
6. a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging according to claim 5, is characterized in that, described radiator bottom of being made up of silicon carbide ceramics is provided with cavity, forms cold and hot air exchange chamber.
7. a preparation method for the LED light source device taking silicon carbide ceramics as radiator integral packaging, is characterized in that, comprises the following steps:
A, prepare silicon carbide ceramics radiator;
B, COR encapsulated phase, be divided into following steps:
The first step: cleaning, smooth radiator form LED chip and lay pedestal on radiator;
Second step: blue or green glue; Appropriate silver paste points just in FPC flexible circuit board, is fixed on FPC flexible circuit board on radiator;
The 3rd step: die bond; LED chip is fixed on to position corresponding to FPC flexible circuit board with elargol;
The 4th step: dry; The radiator that glues LED chip is put into heat-circulation oven constant temperature and leave standstill a period of time oven dry, or adopt spontaneous curing mode to dry;
The 5th step: nation is fixed/routing; LED chip is carried out to bridge joint with pad spun gold corresponding on FPC plate, i.e. the lead of COR welding;
The 6th step: sealing; Adopt automatic adhesive sealing machine to carry out outward appearance encapsulation;
The 7th step: solidify; The integrated light source device of sealing glue is put into heat-circulation oven constant temperature and leave standstill oven dry.
8. the preparation method of a kind of LED light source device taking silicon carbide ceramics as radiator integral packaging according to claim 7, is characterized in that, described steps A, prepares silicon carbide ceramics radiator, comprises the following steps:
The first step, prepares mould;
Second step, proportioning, is uniformly mixed material
The 3rd step, base
The 4th step, sintering.
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| CN201410311972.2A CN104103741A (en) | 2014-07-02 | 2014-07-02 | Integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as radiator, and preparation method of LED light source device |
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| CN201410311972.2A CN104103741A (en) | 2014-07-02 | 2014-07-02 | Integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as radiator, and preparation method of LED light source device |
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| CN104617204A (en) * | 2015-01-16 | 2015-05-13 | 隆科电子(惠阳)有限公司 | Silicon carbide based circuit board and preparation method thereof |
| CN106356443A (en) * | 2016-11-11 | 2017-01-25 | 惠州聚创汇智科技开发有限公司 | Manufacturing method for illuminating circuit board |
| CN110602923A (en) * | 2019-08-30 | 2019-12-20 | 华为技术有限公司 | Packaging module, packaging method thereof and electronic equipment |
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| CN101416325A (en) * | 2006-03-31 | 2009-04-22 | 3M创新有限公司 | LED mounting structures |
| CN101546761A (en) * | 2008-03-25 | 2009-09-30 | 钰桥半导体股份有限公司 | High power light emitting diode module package structure |
| TW201120394A (en) * | 2009-08-31 | 2011-06-16 | Shec Co Ltd | Radiating panel including silicon carbide and method of manufacturing the same |
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| CN101416325A (en) * | 2006-03-31 | 2009-04-22 | 3M创新有限公司 | LED mounting structures |
| CN101546761A (en) * | 2008-03-25 | 2009-09-30 | 钰桥半导体股份有限公司 | High power light emitting diode module package structure |
| TW201120394A (en) * | 2009-08-31 | 2011-06-16 | Shec Co Ltd | Radiating panel including silicon carbide and method of manufacturing the same |
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| CN104617204A (en) * | 2015-01-16 | 2015-05-13 | 隆科电子(惠阳)有限公司 | Silicon carbide based circuit board and preparation method thereof |
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| CN106356443A (en) * | 2016-11-11 | 2017-01-25 | 惠州聚创汇智科技开发有限公司 | Manufacturing method for illuminating circuit board |
| CN110602923A (en) * | 2019-08-30 | 2019-12-20 | 华为技术有限公司 | Packaging module, packaging method thereof and electronic equipment |
| CN110602923B (en) * | 2019-08-30 | 2021-01-01 | 华为技术有限公司 | Packaging module, packaging method thereof and electronic equipment |
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