CN114222446A - Metallization method of large-current via hole of double-sided ceramic copper-clad plate - Google Patents
Metallization method of large-current via hole of double-sided ceramic copper-clad plate Download PDFInfo
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- CN114222446A CN114222446A CN202111649609.8A CN202111649609A CN114222446A CN 114222446 A CN114222446 A CN 114222446A CN 202111649609 A CN202111649609 A CN 202111649609A CN 114222446 A CN114222446 A CN 114222446A
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- copper
- ceramic
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- hole
- clad
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- 239000000919 ceramic Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000001465 metallisation Methods 0.000 title claims abstract description 15
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000004080 punching Methods 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention relates to the technical field of ceramic copper-clad plates, and discloses a method for metalizing a high-current through hole of a double-sided ceramic copper-clad plate, which comprises the following steps: the method comprises the following steps that (1) a ceramic plate is punched, the number of holes is set according to current requirements, and mark holes are formed in the edge of the ceramic plate during punching, so that subsequent exposure positioning is facilitated; step (2), silk-screen printing of silver-copper slurry is carried out on two surfaces of the ceramic plate, and the silver-copper slurry is poured into the holes under the action of a scraper plate during silk-screen printing; step (3), performing vacuum sintering on the copper-clad layer in a vacuum furnace, and forming a conductive nail inside the ceramic hole; and (4) carrying out film pasting, exposure, development, etching and demoulding by using the mark hole position of the ceramic plate, and forming an invisible conductive through hole suitable for large current at a position needing to be conductive. The invention has simple process, simultaneously completes the metallization of the hole and the copper-clad sintering of the AMB, has large current-carrying capacity of the via hole, and is a preferred scheme of a large-current ceramic double-sided circuit.
Description
Technical Field
The invention relates to the technical field of ceramic copper-clad plates, in particular to a metallization method of a large-current via hole of a double-sided ceramic copper-clad plate.
Background
With the popularization of the application of the high-performance aluminum nitride/silicon nitride ceramic copper clad plate, the via hole needs to be formed in a double-sided ceramic copper clad plate circuit on many occasions, and the characteristics of the materials determine that the materials are mostly applied to large-current occasions, so that the current-carrying capacity of the via hole is required to be higher and higher.
The conventional via metallization is realized by chemical deposition and electroplating, the whole metallization process is complicated, and the thickness of electroplating deposition is limited, so that excessive current cannot be carried.
Disclosure of Invention
The invention aims to provide a method for metalizing a high-current through hole of a double-sided ceramic copper-clad plate, which aims to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a method for metalizing a high-current via hole of a double-sided ceramic copper-clad plate comprises the following steps:
the method comprises the following steps that (1) a ceramic plate is punched, the number of holes is set according to current requirements, and mark holes are formed in the edge of the ceramic plate during punching, so that subsequent exposure positioning is facilitated;
step (2), silk-screen printing of silver-copper slurry is carried out on two surfaces of the ceramic plate, and the silver-copper slurry is poured into the holes under the action of a scraper plate during silk-screen printing;
step (3), performing vacuum sintering on the copper-clad layer in a vacuum furnace, and forming a conductive nail inside the ceramic hole;
and (4) carrying out film pasting, exposure, development, etching and demoulding by using the mark hole position of the ceramic plate, and forming an invisible conductive through hole suitable for large current at a position needing to be conductive.
Preferably, the ceramic plate is made of aluminum nitride or silicon nitride and has a thickness of 0.28-1 mm.
Preferably, the thickness of the ceramic plate is 0.32 mm.
Preferably, the thickness of the copper-clad layer is 0.1-1.2 mm.
Preferably, the copper-clad layer has a thickness of 0.3 mm.
Preferably, in step (1), the pore size is selected to be 0.5 to 2 times the thickness of the ceramic plate.
The invention provides a method for metalizing a high-current via hole of a double-sided ceramic copper-clad plate, which has the beneficial effects that: the invention has simple process, simultaneously completes the metallization of the hole and the copper-clad sintering of the AMB, has large current-carrying capacity of the via hole, and is a preferred scheme of a large-current ceramic double-sided circuit.
Drawings
FIG. 1 is a schematic front view of the present invention;
FIG. 2 is a schematic side view of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 2 in accordance with the present invention;
FIG. 4 is a schematic structural diagram of step (2) of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1, please refer to fig. 1-4, the present invention provides a technical solution: a metallization method of a large-current via hole of a double-sided ceramic copper-clad plate is disclosed, wherein a 0.3mm thick copper layer circuit on the A surface and a 0.3mm thick copper layer circuit on the B surface are required to be provided with via hole conduction, and the ceramic plate is silicon nitride with the thickness of 0.32mm, and comprises the following steps:
the method comprises the following steps that (1) a ceramic plate is punched, the aperture is selected according to 1 time of the thickness of the ceramic plate, the number of holes is set according to the current requirement, and mark holes are set at the edge of the ceramic plate during punching, so that subsequent exposure positioning is facilitated;
step (2), silk-screen printing of silver-copper slurry is carried out on two surfaces of the ceramic plate, and the silver-copper slurry is poured into the holes under the action of a scraper plate during silk-screen printing;
step (3), performing vacuum sintering on the copper-clad layer in a vacuum furnace, and forming a conductive nail inside the ceramic hole;
and (4) carrying out film pasting, exposure, development, etching and demoulding by using the mark hole position of the ceramic plate, and forming an invisible conductive through hole suitable for large current at a position needing to be conductive.
Embodiment 2, please refer to fig. 1-4, the present invention provides a technical solution: a metallization method of a large-current via hole of a double-sided ceramic copper-clad plate is disclosed, wherein a 0.32mm thick copper layer circuit on the A surface and a 0.32mm thick copper layer circuit on the B surface need to be provided with via hole conduction, and the ceramic plate is aluminum nitride with the thickness of 0.34mm, and comprises the following steps:
the method comprises the following steps that (1) a ceramic plate is punched, the aperture is selected according to 1.5 times of the thickness of the ceramic plate, the number of holes is set according to the current requirement, and mark holes are set at the edge of the ceramic plate during punching, so that subsequent exposure positioning is facilitated;
step (2), silk-screen printing of silver-copper slurry is carried out on two surfaces of the ceramic plate, and the silver-copper slurry is poured into the holes under the action of a scraper plate during silk-screen printing;
step (3), performing vacuum sintering on the copper-clad layer in a vacuum furnace, and forming a conductive nail inside the ceramic hole;
and (4) carrying out film pasting, exposure, development, etching and demoulding by using the mark hole position of the ceramic plate, and forming an invisible conductive through hole suitable for large current at a position needing to be conductive.
In summary, the ceramic plate holes are filled with the silver-copper slurry, then the copper layer is brazed by the AMB method, the silver-copper slurry in the ceramic plate holes is sintered into the conductive pins, and then the exposure, development and etching are performed on the double-sided circuit, so that the purpose of local conduction of the circuits on two sides is achieved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A metallization method of a large-current via hole of a double-sided ceramic copper-clad plate is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps that (1) a ceramic plate is punched, the number of holes is set according to current requirements, and mark holes are formed in the edge of the ceramic plate during punching, so that subsequent exposure positioning is facilitated;
step (2), silk-screen printing of silver-copper slurry is carried out on two surfaces of the ceramic plate, and the silver-copper slurry is poured into the holes under the action of a scraper plate during silk-screen printing;
step (3), performing vacuum sintering on the copper-clad layer in a vacuum furnace, and forming a conductive nail inside the ceramic hole;
and (4) carrying out film pasting, exposure, development, etching and demoulding by using the mark hole position of the ceramic plate, and forming an invisible conductive through hole suitable for large current at a position needing to be conductive.
2. The metallization method of the high-current via hole of the double-sided ceramic copper-clad plate according to claim 1, characterized in that: the ceramic plate is made of aluminum nitride or silicon nitride and has a thickness of 0.28-1 mm.
3. The metallization method of the high-current via hole of the double-sided ceramic copper-clad plate according to claim 2, characterized in that: the thickness of the ceramic plate is 0.32 mm.
4. The metallization method of the high-current via hole of the double-sided ceramic copper-clad plate according to claim 1, characterized in that: the thickness of the copper-clad layer is 0.1-1.2 mm.
5. The metallization method of the high-current via hole of the double-sided ceramic copper-clad plate according to claim 4, characterized in that: the thickness of the copper-clad layer is 0.3 mm.
6. The metallization method of the high-current via hole of the double-sided ceramic copper-clad plate according to claim 1, characterized in that: in the step (1), the aperture is selected according to 0.5-2 times of the thickness of the ceramic plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111649609.8A CN114222446A (en) | 2021-12-30 | 2021-12-30 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111649609.8A CN114222446A (en) | 2021-12-30 | 2021-12-30 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
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| Publication Number | Publication Date |
|---|---|
| CN114222446A true CN114222446A (en) | 2022-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111649609.8A Pending CN114222446A (en) | 2021-12-30 | 2021-12-30 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117069517A (en) * | 2023-08-16 | 2023-11-17 | 山东厚发芯源科技有限公司 | Method for simultaneously sintering copper-clad ceramic substrate in multiple layers and double sides |
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| US6217989B1 (en) * | 1999-12-10 | 2001-04-17 | International Business Machines Corporation | Conductive line features for enhanced reliability of multi-layer ceramic substrates |
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| JP2003324268A (en) * | 2002-04-30 | 2003-11-14 | Sumitomo Metal Electronics Devices Inc | Conductor paste, printing method, and method of manufacturing ceramic multilayer circuit board |
| JP2004014597A (en) * | 2002-06-04 | 2004-01-15 | Sumitomo Electric Ind Ltd | Method for producing aluminum nitride sintered body having metaliized layer |
| JP2011159826A (en) * | 2010-02-01 | 2011-08-18 | Nhk Spring Co Ltd | Machinable ceramic circuit board and method for manufacturing the same |
| US20150282309A1 (en) * | 2012-10-03 | 2015-10-01 | Tanaka Kikinzoku Kogyo K.K. | Conductive paste and ceramic substrate manufactured using the same |
| CN105428504A (en) * | 2015-12-23 | 2016-03-23 | 陕西华经微电子股份有限公司 | Preparation method for thick film ceramic bracket for LED light source packaging |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
| CN207282678U (en) * | 2017-10-21 | 2018-04-27 | 苏州市新诚氏通讯电子股份有限公司 | Vehicular satellite signal Ceramic Dielectric Filter |
| CN108135089A (en) * | 2017-12-21 | 2018-06-08 | 昆山福烨电子有限公司 | A kind of manufacture craft of ceramic base all print PCB |
| CN109970462A (en) * | 2017-12-28 | 2019-07-05 | 惠州比亚迪电子有限公司 | One kind covering copper ceramic wafer and preparation method thereof |
-
2021
- 2021-12-30 CN CN202111649609.8A patent/CN114222446A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613726A (en) * | 1992-06-26 | 1994-01-21 | Toshiba Corp | Ceramic circuit substrate |
| JP2003101236A (en) * | 1998-01-08 | 2003-04-04 | Ngk Spark Plug Co Ltd | Method of manufacturing ceramic green sheet with metallizing ink filled into through hole and method of filling metallizing ink into through hole formed in ceramic green sheet |
| US6217989B1 (en) * | 1999-12-10 | 2001-04-17 | International Business Machines Corporation | Conductive line features for enhanced reliability of multi-layer ceramic substrates |
| JP2003324268A (en) * | 2002-04-30 | 2003-11-14 | Sumitomo Metal Electronics Devices Inc | Conductor paste, printing method, and method of manufacturing ceramic multilayer circuit board |
| JP2004014597A (en) * | 2002-06-04 | 2004-01-15 | Sumitomo Electric Ind Ltd | Method for producing aluminum nitride sintered body having metaliized layer |
| JP2011159826A (en) * | 2010-02-01 | 2011-08-18 | Nhk Spring Co Ltd | Machinable ceramic circuit board and method for manufacturing the same |
| US20150282309A1 (en) * | 2012-10-03 | 2015-10-01 | Tanaka Kikinzoku Kogyo K.K. | Conductive paste and ceramic substrate manufactured using the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117069517A (en) * | 2023-08-16 | 2023-11-17 | 山东厚发芯源科技有限公司 | Method for simultaneously sintering copper-clad ceramic substrate in multiple layers and double sides |
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