CN109970462A - One kind covering copper ceramic wafer and preparation method thereof - Google Patents
One kind covering copper ceramic wafer and preparation method thereof Download PDFInfo
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- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
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- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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Abstract
For overcome it is existing cover copper ceramic wafer and covered there are copper sheet surrounding and ceramic substrate connect position stress and concentrate, the problem of cold-and-heat resistent impact capacity difference, the present invention provides one kind to cover copper ceramic wafer, including ceramic substrate and the layers of copper being attached on the ceramic substrate, the outer rim of the layers of copper is located on the inside of the outer rim of the ceramic substrate, and the outer rim of the layers of copper is in concave-convex wavy.Meanwhile the invention also discloses the above-mentioned preparation methods for covering copper ceramic wafer.The copper ceramic wafer provided by the invention that covers eliminates its thermal stress, has preferable cold-and-heat resistent impact capacity, to avoid that layers of copper falls off from ceramic substrate or ceramic wafer is cracked, extends the service life of product.
Description
Technical field
The invention belongs to cover copper ceramic wafer technical field, and in particular to one kind covers copper ceramic wafer and preparation method thereof.
Background technique
Covering copper ceramic wafer (DBC, Direct Bonding Copper) has the high thermal conductivity of ceramics, high electric insulation, high machinery
The characteristics such as intensity, low bulk, while the high conductivity and excellent welding performance of oxygen-free copper are had both, various patterns can be etched
Meet job requirement, is widely used in the fields such as power electronics, high power module, space flight and aviation.
A kind of existing processing technology for covering copper ceramic wafer obtains covering copper pottery by covering copper sheet sintering on ceramic substrate
Porcelain sintered plate covers after copper ceramic post sintering plate etches work pattern and obtains covering copper ceramic wafer.Due to the heat of ceramic substrate and copper sheet
Expansion coefficient difference is larger, existing to cover copper ceramic wafer (such as hot environment, low temperature environment, by cold in pernicious environmental work
Thermal shock test simulation) easily there is copper sheet surrounding and cover with ceramic substrate connecing position stress and excessively concentrating, cause copper sheet from ceramics
It falls off on plate or the problems such as ceramic insulating substrate cracked fracture, reduces the service life for covering copper ceramics panel products.
Summary of the invention
For it is existing cover copper ceramic wafer and covered there are copper sheet surrounding and ceramic substrate connect position stress and concentrate, cold-and-heat resistent impact energy
The problem of power difference, the present invention provides one kind to cover copper ceramic wafer and preparation method thereof.
It is as follows that the present invention solves technical solution used by above-mentioned technical problem:
On the one hand, copper ceramic wafer is covered the present invention provides one kind, including ceramic substrate and be attached to the ceramic substrate
On layers of copper, the outer rim of the layers of copper is located on the inside of the outer rim of the ceramic substrate, and the outer rim of the layers of copper is in concave-convex wave
Shape.
Optionally, the ceramic substrate is al nitride ceramic board or alumina ceramic plate.
Optionally, the quantity of the layers of copper is two layers, and two layers of layers of copper is covered each by two of the ceramic substrate
Surface.
Optionally, be provided in the outer rim of the layers of copper multiple outer rims by the layers of copper towards the layers of copper inner recess
Groove, multiple grooves are alternatively arranged along the outer rim of the layers of copper.
Optionally, the separation of the two neighboring groove is less than 1.5mm.
Optionally, the groove is semi-circular groove or U-lag.
Optionally, the ceramic substrate is rectangular slab.
Optionally, cuprous oxide layer is formed on the surface that the layers of copper is used to contact with the ceramic substrate.
Optionally, active metal solder is provided on the surface that the ceramic substrate is used to contact with the layers of copper.
On the other hand, the present invention provides the preparation methods for covering copper ceramic wafer as described above, comprising the following steps:
One kind is provided and covers copper ceramics plate front body, the copper ceramics plate front body that covers includes ceramic substrate and is attached to the pottery
Layers of copper on porcelain substrate；
Layers of copper on the ceramic substrate is etched, to obtain the working line in layers of copper, while in the layers of copper
Outer rim formed wavelike structure.
Optionally, the preparation method for covering copper ceramics plate front body includes: to carry out oxidation processes to copper sheet, makes the table of copper sheet
Face forms one layer of cuprous oxide layer, and copper sheet is covered on ceramic substrate and is sintered, to form copper on the ceramic substrate
Layer.
Optionally, the preparation method for covering copper ceramics plate front body includes: one layer of activity of surface silk-screen in ceramic substrate
Copper sheet is covered on the active metal solder by brazing metal, and heating makes layers of copper be brazed in ceramic substrate under vacuum conditions
Surface.
Optionally, the copper sheet is two layers, and two layers of copper sheet is covered in two surfaces of ceramic substrate.
What is provided according to the present invention covers copper ceramic wafer, including ceramic substrate and the copper being attached on the ceramic substrate
Layer, by being handled in the outer fringe position of the layers of copper, so that the outer rim of the layers of copper is wavy in bumps, it is concave-convex wavy
Layers of copper outer rim can be released effectively and cover the thermal stress that copper ceramic wafer occurs in the high/low temperature course of work, copper ceramic wafer is covered in raising
Cold-and-heat resistent impact capacity, eliminate the problem of outer fiber stress of layers of copper is concentrated, thus avoid layers of copper fall off from ceramic substrate or
Ceramic wafer is cracked, extends the service life of product.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for covering copper ceramic wafer that one embodiment of the invention provides；
Fig. 2 is the enlarged diagram in Fig. 1 at A；
Fig. 3 be another embodiment of the present invention provides the structural schematic diagram for covering copper ceramic wafer；
Fig. 4 is the enlarged diagram in Fig. 3 at B；
Fig. 5 is the structural schematic diagram for covering copper ceramic wafer that a comparative example of the invention provides；
Fig. 6 is the enlarged diagram in Fig. 5 at C.
Appended drawing reference in Figure of description is as follows:
1, ceramic substrate；11, gap；2, layers of copper；21, groove；21a, semi-circular groove；21b, U-lag.
Specific embodiment
In order to which the technical problems, technical solutions and beneficial effects solved by the present invention is more clearly understood, below in conjunction with
Accompanying drawings and embodiments, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Shown in referring to figs. 1 to 4, copper ceramic wafer is covered the embodiment of the invention discloses one kind, including ceramic substrate 1 and attached
In the layers of copper 2 on the ceramic substrate 1, the outer rim of the layers of copper 2 is located on the inside of the outer rim of the ceramic substrate 1, in institute
It states and is formed with gap 11 between the outer rim of layers of copper 2 and the outer rim of the ceramic substrate 1, and the outer rim of the layers of copper 2 is in concave-convex wave
Wave-like.
By being handled in the outer fringe position of the layers of copper 2, so that the outer rim of the layers of copper 2 is wavy in bumps, it is recessed
Convex 2 outer rim of wavy layers of copper, which can be released effectively, covers the thermal stress that copper ceramic wafer occurs in the high/low temperature course of work, improves
The cold-and-heat resistent impact capacity of copper ceramic wafer is covered, the problem of outer fiber stress of layers of copper 2 is concentrated is eliminated, to avoid layers of copper 2 from ceramic base
It falls off on plate 1 or ceramic wafer is cracked, increase the service life of product.
In some embodiments, the ceramic substrate 1 is al nitride ceramic board or alumina ceramic plate.Aluminium nitride (AlN)
Ceramic wafer has excellent heating conduction, and thermal conductivity is up to 150W/mK~200W/mK, and thermal expansion coefficient connects with silicon
It closely, is one of the ideal baseplate material of ceramics.
In some embodiments, the quantity of the layers of copper 2 is two layers, and two layers of layers of copper 2 is covered each by the ceramics
Two surfaces of substrate 1.By etching work can be etched respectively in two layers of copper 2 up and down of the ceramic substrate 1
Route, about 1 two layers of copper 2 of the ceramic substrate be formed by working line can independent role, can also be interconnected, from
And the area coverage for covering copper ceramic wafer is advantageously reduced, realize device miniaturization.
It can be set as concave-convex undulated outer edge in the outer fringe position of single layer layers of copper 2, it can also be in the outer rim position of two layers of layers of copper 2
It sets and is disposed as concave-convex undulated outer edge, under preferable case, the outer fringe position of two layers of layers of copper 2 is disposed as concave-convex wavy outer
Edge.
It should be noted that in the description of the present invention, " outer rim of layers of copper 2 is in concave-convex wavy " should make broad sense reason
Solution can be the waveform outer rim of rule, is also possible to irregular waveform outer rim or the two combines.
In some embodiments, the outer rim of the layers of copper 2 is the wavelike structure of rule, specifically, the layers of copper 2 is outer
The groove 21 of inner recess of multiple outer rims by the layers of copper 2 towards the layers of copper 2, the opening of the groove 21 are provided on edge
In the outer rim of the layers of copper 2, multiple grooves 21 are alternatively arranged along the outer rim of the layers of copper 2, and then in the layers of copper 2
Outer rim form concave-convex wavelike structure.
In some embodiments, the separation of the two neighboring groove is less than 1.5mm.
Corresponding, to avoid the two neighboring groove overlapping, the groove width of the groove is less than the two neighboring groove
Separation.
The distance between the center line for the two neighboring groove that term " separation " refers to.
Inventor has found rise when the separation of the two neighboring groove is less than 1.5mm by many experiments
To the effect of preferable release thermal stress, and when the separation of the two neighboring groove is greater than 1.5mm, then it discharges heat and answers
The effect of power can accordingly obtain biggish weakening, therefore preferred design makes the separation of the two neighboring groove be less than 1.5mm.
As shown in Fig. 2, in one embodiment of this invention, the groove 21 is semi-circular groove.
As shown in figure 4, in one embodiment of this invention, the groove 21 is U-lag.
It should be noted that in other embodiments, the groove 21 can also be the other shapes for realizing function of the same race,
Such as irregular arc etc., it should all include within protection scope of the present invention.
As depicted in figs. 1 and 2, in some embodiments, the ceramic substrate 1 is rectangular slab.
It should be noted that in other embodiments, the ceramic substrate 1 can also be provided in round as needed, ladder
The shapes such as shape should all include within protection scope of the present invention.
Since the interfacial wettability between al nitride ceramic board and Ni metal is poor, bond strength is low, and the heat of AlN and Cu
Coefficient of expansion difference is larger, and resulting huge thermal stress makes al nitride ceramic board and binding directly for layers of copper 2 be difficult to reality
It is existing.
To solve the above problems, in one embodiment, the layers of copper 2 is used for the surface contacted with the ceramic substrate 1
It is formed with cuprous oxide layer 2.The cuprous oxide layer 2 occurs altogether with adjacent layers of copper 2 under eutectic temperature (1064-1080 DEG C)
Crystalline substance wetting infiltration, is formed with copper-oxygen eutectic wetting layer, the copper-oxygen eutectic wetting layer all has with layers of copper 2, al nitride ceramic board
Good binding force, to improve the bond strength of layers of copper 2 and the ceramic substrate 1.
In another embodiment, active metal is provided on the surface that the ceramic substrate 1 is used to contact with the layers of copper 2
Solder.
Ag-Cu-Ti, Cu-Ti, Cu-Zr, Ag-Cu-Ti-Zr etc. can be used in the active metal solder, it is furthermore preferred that institute
Stating active metal solder is Ag-Cu-Ti.
The active metal solder and the ceramic substrate 1 and the layers of copper 2 have preferable wetability, by described
Active metal solder is set between ceramic substrate 1 and the layers of copper 2 to realize active metal brazing, improves the ceramic substrate 1
With the bond strength of the layers of copper 2.
Another embodiment of the present invention discloses the above-mentioned preparation method for covering copper ceramic wafer, comprising the following steps:
One kind is provided and covers copper ceramics plate front body, the copper ceramics plate front body that covers includes ceramic substrate 1 and is attached to described
Layers of copper 2 on ceramic substrate 1；
Layers of copper 2 on the ceramic substrate 1 is etched, to obtain the working line in layers of copper 2, while in the copper
The outer rim of layer 2 forms wavelike structure.
Wavelike structure is formed in the outer rim of the layers of copper 2, generates shadow to avoid to the working line in the layers of copper 2
It rings, meanwhile, concave-convex wavy 2 outer rim of layers of copper, which can be released effectively, covers the heat that copper ceramic wafer occurs in the high/low temperature course of work
Stress improves the cold-and-heat resistent impact capacity for covering copper ceramic wafer, the problem of outer fiber stress of layers of copper 2 is concentrated is eliminated, to avoid layers of copper 2
It falls off from ceramic substrate 1 or ceramic wafer is cracked, increase the service life of product.
The forming method and the working line generation type one in the layers of copper 2 of the wavelike structure of 2 outer rim of layers of copper
It causes, can be etched and be realized by exposure development.
Wavelike structure outer rim and working line are etched simultaneously in the present embodiment and obtained, progress repeatedly etching behaviour is avoided
Make, is conducive to shorten preparation time.
Meanwhile if etching wavelike structure outer rim before sintering, the protrusion that is formed between two neighboring groove
Portion is relatively easy to bend, and is stored inconveniently, while being also unfavorable for the setting of subsequent oxidation cuprous layer and active metal solder.
In some embodiments, the copper ceramics plate front body that covers is obtained by way of sintering, it is described cover copper ceramic wafer before
The preparation method of body includes: to carry out oxidation processes to copper sheet, so that the surface of copper sheet is formed one layer of cuprous oxide layer 2, copper sheet is covered
It is placed on ceramic substrate 1 and is sintered, to form layers of copper 2 on the ceramic substrate 1.
The copper sheet is two layers, two layers of copper sheet is covered in two surfaces of ceramic substrate 1, in the ceramic substrate 1
Two sides formed two layers of layers of copper 2.
In further embodiments, the copper ceramics plate front body that covers is obtained by way of active metal brazing, specifically,
The preparation method for covering copper ceramics plate front body includes: one layer of active metal solder of surface silk-screen in ceramic substrate, by copper sheet
It is covered on the active metal solder, heating makes layers of copper be brazed in ceramic base plate surface under vacuum conditions.
The copper sheet is two layers, two layers of copper sheet is covered in two surfaces of ceramic substrate 1, in the ceramic substrate 1
Two sides formed two layers of layers of copper 2.
In other embodiments, the copper ceramics plate front body that covers can also be obtained by way of electroless copper, specifically, institute
State that cover the preparation method of copper ceramics plate front body include: first to make with Treatment with activating agent upper one layer of ceramic base plate surface absorption active
Ceramic substrate is immersed in copper ion solution by particle, and copper ion is reduced on these active metallics first, and by
The metallic copper nucleus of reduction becomes the Catalytic Layer of copper ion again, continues the reduction reaction of copper on these new copper nucleating surfaces
It carries out, obtains the ceramic substrate of covering layers of copper.
In the above-mentioned various preparation methods for covering copper ceramics plate front body, copper ceramic wafer is covered compared to what electroless copper mode obtained
Precursor, by active metal brazing mode obtain cover copper ceramics plate front body and by sintering processing obtain cover copper ceramic wafer before
Body has better layers of copper bond strength.And copper ceramics plate front body is covered compared to passing through by what active metal brazing mode obtained
What sintering processing obtained covers copper ceramics plate front body, has better bond strength, but the active metal brazing mode needs to use
Active metal solder is welded inside vacuum brazing stove, requires solder high, complex process, is needed according to different activities gold
Belong to solder and adjust different welding procedures, the quality of active metal solder decides that the combination between copper sheet and ceramic substrate is strong
Degree.Using this technique, when etching working line and wavy edge in the later period, difficulty caused to existing etch process, solder without
Method is etched in product etching groove and is cleaned out, and causing DBC product to reduce in pressure-resistant aspect of performance, (etching groove contains conductive materials
It is easy to cause between copper sheet and punctures under high pressure).
The present invention is further detailed by the following examples.
Embodiment 1
The present embodiment prepares the copper sheet of 0.3mm thickness using high-purity oxygen-free copper, prepares two copper sheets, by oxidation technology
Afterwards, one layer of cuprous oxide is formed on the surface of copper sheet, then two copper sheets is covered each by two tables in al nitride ceramic board
Face, the al nitride ceramic board that will be covered with copper sheet, which is put into inside chain-belt type atmosphere sintering furnace, to be sintered, in nitrogen after the completion of sintering
Two surfaces up and down for changing aluminium ceramic wafer form layers of copper 2, obtain covering copper ceramics plate front body.
Development etching is exposed to the layers of copper 2 on two surfaces above and below al nitride ceramic board, forms work in the inside of layers of copper 2
Make route, forms wavelike structure in the outer rim of layers of copper 2.
As depicted in figs. 1 and 2, in al nitride ceramic board provided in this embodiment, the outer rim of the layers of copper 2 and the pottery
It is formed with gap 11 between the outer rim of porcelain substrate 1, multiple outer rim courts by the layers of copper 2 are provided in the outer rim of the layers of copper 2
The semi-circular groove 21a, multiple semi-circular groove 21a of the inner recess of the layers of copper 2 are arranged along the outer rim interval of the layers of copper 2
Column, and then concave-convex wavelike structure is formed in the outer rim of the layers of copper 2.
The separation of the two neighboring semi-circular groove 21a is less than 1.5mm.
Embodiment 2
The present embodiment prepares the copper sheet of 0.3mm thickness using high-purity oxygen-free copper, prepares two copper sheets, by oxidation technology
Afterwards, one layer of cuprous oxide is formed on the surface of copper sheet, then two copper sheets is covered each by two tables in al nitride ceramic board
Face, the al nitride ceramic board that will be covered with copper sheet, which is put into inside chain-belt type atmosphere sintering furnace, to be sintered, in nitrogen after the completion of sintering
Two surfaces up and down for changing aluminium ceramic wafer form layers of copper, obtain covering copper ceramics plate front body.
Development etching is exposed to the layers of copper on two surfaces above and below al nitride ceramic board, forms work in the inside of layers of copper
Route forms wavelike structure in the outer rim of layers of copper.
In al nitride ceramic board provided in this embodiment, between the outer rim of the layers of copper and the outer rim of the ceramic substrate
Be formed with gap, be provided in the outer rim of the layers of copper multiple outer rims by the layers of copper towards the layers of copper inner recess half
Circular trough, multiple semi-circular grooves are alternatively arranged along the outer rim of the layers of copper, and then form bumps in the outer rim of the layers of copper
Wavelike structure.
The separation of the two neighboring semi-circular groove is greater than 1.5mm.
Embodiment 3
The present embodiment prepares the copper sheet of 0.3mm thickness using high-purity oxygen-free copper, prepares two copper sheets, by oxidation technology
Afterwards, one layer of cuprous oxide is formed on the surface of copper sheet, then two copper sheets is covered each by two tables in al nitride ceramic board
Face, the al nitride ceramic board that will be covered with copper sheet, which is put into inside chain-belt type atmosphere sintering furnace, to be sintered, in nitrogen after the completion of sintering
Two surfaces up and down for changing aluminium ceramic wafer form layers of copper 2, obtain covering copper ceramics plate front body.
Development etching is exposed to the layers of copper 2 on two surfaces above and below al nitride ceramic board, forms work in the inside of layers of copper 2
Make route, forms wavelike structure in the outer rim of layers of copper 2.
As shown in Figure 3 and Figure 4, in al nitride ceramic board provided in this embodiment, the outer rim of the layers of copper 2 and the pottery
It is formed with gap 11 between the outer rim of porcelain substrate 1, multiple outer rim courts by the layers of copper 2 are provided in the outer rim of the layers of copper 2
The U-lag 21b of the inner recess of the layers of copper 2, multiple U-lag 21b are alternatively arranged along the outer rim of the layers of copper 2, in turn
Concave-convex wavelike structure is formed in the outer rim of the layers of copper 2.
The separation of the two neighboring U-lag 21b is less than 1.5mm.
Embodiment 4
The present embodiment prepares the copper sheet of 0.3mm thickness using high-purity oxygen-free copper, prepares two copper sheets, by oxidation technology
Afterwards, one layer of cuprous oxide is formed on the surface of copper sheet, then two copper sheets is covered each by two tables in al nitride ceramic board
Face, the al nitride ceramic board that will be covered with copper sheet, which is put into inside chain-belt type atmosphere sintering furnace, to be sintered, in nitrogen after the completion of sintering
Two surfaces up and down for changing aluminium ceramic wafer form layers of copper, obtain covering copper ceramics plate front body.
Development etching is exposed to the layers of copper on two surfaces above and below al nitride ceramic board, forms work in the inside of layers of copper
Route forms wavelike structure in the outer rim of layers of copper.
In al nitride ceramic board provided in this embodiment, between the outer rim of the layers of copper and the outer rim of the ceramic substrate
It is formed with gap, the U of inner recess of multiple outer rims by the layers of copper towards the layers of copper is provided in the outer rim of the layers of copper
Shape slot, multiple U-lags are alternatively arranged along the outer rim of the layers of copper, and then are formed in the outer rim of the layers of copper concave-convex wavy
Structure.
The separation of the two neighboring U-lag is greater than 1.5mm.
Comparative example 1
This comparative example prepares the copper sheet of 0.3mm thickness using high-purity oxygen-free copper, prepares two copper sheets, by oxidation technology
Afterwards, one layer of cuprous oxide is formed on the surface of copper sheet, then two copper sheets is covered each by two tables in al nitride ceramic board
Face, the al nitride ceramic board that will be covered with copper sheet, which is put into inside chain-belt type atmosphere sintering furnace, to be sintered, in nitrogen after the completion of sintering
Two surfaces up and down for changing aluminium ceramic wafer form layers of copper 2, obtain covering copper ceramics plate front body.
Development etching is exposed to the layers of copper 2 on two surfaces above and below al nitride ceramic board, forms work in the inside of layers of copper 2
Make route, forms smooth linear outer rim in the outer rim of layers of copper 2.
As shown in Figure 5 and Figure 6, in the al nitride ceramic board that this comparative example provides, the outer rim of the layers of copper 2 is smooth
Threadiness is formed with gap 11 between the outer rim of the layers of copper 2 and the outer rim of the ceramic substrate 1.
Performance test
Cold shock testing is carried out to the copper ceramic wafer that covers that 1~embodiment of above-described embodiment 4 and comparative example 1 are prepared,
It is that a temperature applies circulation by cooling thermal impact actual condition:
High temperature: 125 DEG C of 30min
Room temperature: 25 DEG C of 3min
Low temperature: -40 DEG C of 30min
Obtained test result filling table 1.
Table 1
It can be seen that comparative example 1, embodiment 3 and comparative example 1 from the test result of table 1 it is found that in identical operating condition
Under the conditions of, using it is provided by the invention cover copper ceramic wafer by 200 circulation cooling thermal impact circulation successors be able to maintain compared with
For intact appearance, and the smooth layers of copper outer rim that comparative example 1 provides covers copper ceramic wafer then cold less than 100 circulations
Occur copper sheet when heat shock cycling to fall off cracking phenomena and ceramic seminess, illustrate that the copper ceramic wafer provided by the invention that covers has
There is better cold-and-heat resistent impact property.
On the other hand, 1~embodiment of comparative example 4 and comparative example 1 it is found that the separation of two neighboring groove to covering copper
The cold-and-heat resistent impact property of ceramic wafer also has large effect, when the separation of two neighboring groove is greater than 1.5mm, obtains
The copper ceramic wafer that covers in embodiment 2 and embodiment 4 covers copper ceramic wafer relative to comparative example 1, in cold-and-heat resistent impact property
Small elevation is arrived；And when the separation of two neighboring groove is less than 1.5mm, covering in obtained embodiment 1 and embodiment 3
Copper ceramic wafer covers copper ceramic wafer relative to embodiment 2, embodiment 4 and comparative example 1, obtained in cold-and-heat resistent impact property into
The promotion of one step.
Deflection of the copper ceramic wafer after cold shock testing is covered to what above-described embodiment 1 and comparative example 1 were prepared
It is tested, obtained test result filling table 2.
Table 2
| Maximum value | Embodiment 1 | Comparative example 1 |
| Overall deformation (mm) | 0.31156 | 0.59637 |
| Z-direction deforms (mm) | 0.29853 | 0.36773 |
| Whole strain (%) | 0.76817 | 0.7734 |
It can be seen that under identical cooling thermal impact working condition from the test result of table 2, covered using provided by the invention
The deformation result of the overall deformation of copper ceramic wafer, whole strain and thickness direction is respectively less than smooth layers of copper outer rim in comparative example 1
The numerical result for covering copper ceramic wafer, when may determine that by comparison by cooling thermal impact, the copper ceramic wafer provided by the invention of covering
Deflection is more preferably small, and size is relatively stable.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (13)
1. one kind covers copper ceramic wafer, which is characterized in that including ceramic substrate and the layers of copper being attached on the ceramic substrate, institute
The outer rim for stating layers of copper is located on the inside of the outer rim of the ceramic substrate, and the outer rim of the layers of copper is in concave-convex wavy.
2. according to claim 1 cover copper ceramic wafer, which is characterized in that the ceramic substrate is al nitride ceramic board or oxygen
Change aluminium ceramic wafer.
3. according to claim 1 cover copper ceramic wafer, which is characterized in that the quantity of the layers of copper is two layers, described in two layers
Layers of copper is covered each by two surfaces of the ceramic substrate.
4. according to claim 1 cover copper ceramic wafer, which is characterized in that be provided in the outer rim of the layers of copper multiple by institute
State the outer rim of layers of copper towards the layers of copper inner recess groove, multiple grooves are alternatively arranged along the outer rim of the layers of copper.
5. according to claim 4 cover copper ceramic wafer, which is characterized in that the separation of the two neighboring groove is less than
1.5mm。
6. according to claim 4 cover copper ceramic wafer, which is characterized in that the groove is semi-circular groove or U-lag.
7. according to claim 1 cover copper ceramic wafer, which is characterized in that the ceramic substrate is rectangular slab.
8. according to claim 1 cover copper ceramic wafer, which is characterized in that the layers of copper with the ceramic substrate for contacting
Surface on be formed with cuprous oxide layer.
9. according to claim 1 cover copper ceramic wafer, which is characterized in that the ceramic substrate with the layers of copper for contacting
Surface on be provided with active metal solder.
10. covering the preparation method of copper ceramic wafer described according to claim 1~any one of 9, which is characterized in that including with
Lower step:
One kind is provided and covers copper ceramics plate front body, the copper ceramics plate front body that covers includes ceramic substrate and is attached to the ceramic base
Layers of copper on plate；
Layers of copper on the ceramic substrate is etched, to obtain the working line in layers of copper, while in the outer of the layers of copper
Edge forms wavelike structure.
11. the preparation method according to claim 10 for covering copper ceramic wafer, which is characterized in that described to cover copper ceramics plate front body
Preparation method include: to copper sheet carry out oxidation processes, make copper sheet surface formed one layer of cuprous oxide layer, copper sheet is covered in
It is sintered on ceramic substrate, to form layers of copper on the ceramic substrate.
12. the preparation method according to claim 10 for covering copper ceramic wafer, which is characterized in that described to cover copper ceramics plate front body
Preparation method include: one layer of active metal solder of surface silk-screen in ceramic substrate, copper sheet is covered in the active metal
On solder, heating makes layers of copper be brazed in ceramic base plate surface under vacuum conditions.
13. the preparation method according to claim 11 or 12 for covering copper ceramic wafer, which is characterized in that the copper sheet is two
Two layers of copper sheet, is covered in two surfaces of ceramic substrate by layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114000112A (en) * | 2021-10-21 | 2022-02-01 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
| CN114222446A (en) * | 2021-12-30 | 2022-03-22 | 无锡天杨电子有限公司 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
| CN114230359A (en) * | 2020-09-09 | 2022-03-25 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN116496098A (en) * | 2022-01-18 | 2023-07-28 | 上海富乐华半导体科技有限公司 | Ceramic substrate with metal coated on both sides and preparation method thereof |
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| CN201149866Y (en) * | 2007-11-19 | 2008-11-12 | 段维新 | Ceramic/metallic complex structure |
| CN101312168A (en) * | 2007-05-25 | 2008-11-26 | 株式会社丰田自动织机 | Semiconductor device |
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| CN101312168A (en) * | 2007-05-25 | 2008-11-26 | 株式会社丰田自动织机 | Semiconductor device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114230359A (en) * | 2020-09-09 | 2022-03-25 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN114230359B (en) * | 2020-09-09 | 2023-03-14 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN114000112A (en) * | 2021-10-21 | 2022-02-01 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
| CN114000112B (en) * | 2021-10-21 | 2024-03-22 | 苏州玖凌光宇科技有限公司 | Aluminum nitride copper-clad AMB method |
| CN114222446A (en) * | 2021-12-30 | 2022-03-22 | 无锡天杨电子有限公司 | Metallization method of large-current via hole of double-sided ceramic copper-clad plate |
| CN116496098A (en) * | 2022-01-18 | 2023-07-28 | 上海富乐华半导体科技有限公司 | Ceramic substrate with metal coated on both sides and preparation method thereof |
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