CN110620092B - Heat dissipation bottom plate, heat dissipation element, preparation method of heat dissipation element and IGBT module - Google Patents
Heat dissipation bottom plate, heat dissipation element, preparation method of heat dissipation element and IGBT module Download PDFInfo
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- CN110620092B CN110620092B CN201810639794.4A CN201810639794A CN110620092B CN 110620092 B CN110620092 B CN 110620092B CN 201810639794 A CN201810639794 A CN 201810639794A CN 110620092 B CN110620092 B CN 110620092B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Abstract
The utility model relates to a radiating bottom plate, radiating element and preparation method and IGBT module thereof, this radiating bottom plate includes aluminium silicon carbide board and heat dissipation post, aluminium silicon carbide board has relative first main surface and the second main surface that sets up, and at least part first main surface coats and is stamped first copper layer of spouting, at least part second main surface coats and is stamped the second and spouts the copper layer, the heat dissipation post weld in first copper layer of spouting, the heat dissipation post is copper-containing heat dissipation post. The radiating bottom plate has the linear expansion coefficient which is more matched with the ceramic circuit substrate, so that the stability of the module packaging performance can be improved, and the service life can be prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
Description
Technical Field
The disclosure relates to the field of power modules, in particular to a heat dissipation bottom plate, a heat dissipation element, a preparation method of the heat dissipation bottom plate and the heat dissipation element, and an IGBT module.
Background
At present, the packaging bottom plate for the high-power IGBT module is mainly a Cu (copper) bottom plate and an AlSiC (aluminum silicon carbon) bottom plate. Compared with a Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and the chip, the thermal stress is smaller, the AlSiC specific strength is high, the module packaging performance can be more stable, and the service life is prolonged. However, the thermal conductivity of the high thermal conductivity AlSiC prepared at present is 200W/(m.K), which is different from the thermal conductivity of copper 380W/(m.K), and the heat dissipation Pin of the AlSiC bottom plate is made of Al (aluminum), so that the efficiency of heat dissipation in contact with the cooling liquid is more limited by only 150W/(m.K) of thermal conductivity. Meanwhile, in the production process of the conventional AlSiC radiating bottom plate, an Al Pin needle is directly cast and formed through a mold, and the mold is high in friction force and easy to damage when the Pin needle is demolded, so that the mold is high in cost.
Disclosure of Invention
The purpose of the present disclosure is to provide a heat-dissipating substrate having good thermal conductivity, high matching between the coefficient of linear expansion and the ceramic circuit substrate and the chip, and high bonding force between the heat-dissipating stud and the substrate.
In order to achieve the above object, a first aspect of the present disclosure provides a heat dissipation base plate, which includes an aluminum silicon carbide plate and a heat dissipation pillar, wherein the aluminum silicon carbide plate has a first main surface and a second main surface which are oppositely disposed, at least a portion of the first main surface is covered with a first copper-sprayed layer, at least a portion of the second main surface is covered with a second copper-sprayed layer, the heat dissipation pillar is welded to the first copper-sprayed layer, and the heat dissipation pillar is a copper-containing heat dissipation pillar.
Optionally, the heat-dissipating stud is a copper metal heat-dissipating stud or a copper alloy heat-dissipating stud.
Optionally, the heat dissipation base plate includes a plurality of heat dissipation pillars, and the plurality of heat dissipation pillars are welded on the surface of the first copper-sprayed layer in parallel at intervals.
Optionally, the heat dissipation base plate includes a solder layer disposed between the heat dissipation pillar and the first copper spraying layer.
Optionally, the solder layer contains solder, and the solder comprises lead-based solder and/or lead-free solder; the lead-based solder comprises PbSn and/or PbSnAg, and the lead-free solder comprises at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge and Sn-Cu-Ni.
Optionally, the thickness of the second copper-spraying layer is 20-250 μm.
A second aspect of the present disclosure provides a heat dissipating element comprising the heat dissipating base plate according to the first aspect of the present disclosure.
Optionally, the heat dissipation element further comprises a copper-clad ceramic substrate, and the copper-clad ceramic substrate is welded on the surface of the second copper-sprayed layer in a fitting manner.
Optionally, the copper-clad ceramic substrate includes a ceramic insulating plate, the ceramic insulating plate has a first surface and a second surface that are arranged oppositely, the first surface and the second surface of the ceramic insulating plate are respectively provided with a first copper layer and a second copper layer with different thicknesses, and the first copper layer is welded on the surface of the second copper-sprayed layer in a fitting manner.
Optionally, the ratio of the thicknesses of the first copper layer and the second copper layer is (0.5-0.9): 1, the thickness of the second copper layer is 0.1-0.5 mm.
Optionally, the ceramic insulating plate is at least one of an aluminum oxide plate, an aluminum nitride plate, and a silicon nitride plate.
A third aspect of the present disclosure provides a method of preparing a heat sink base plate comprising an aluminum silicon carbide plate having a first major surface and a second major surface disposed opposite to each other and a heat-dissipating stud, the heat-dissipating stud being a copper-containing heat-dissipating stud, the method comprising the steps of: s1, performing first copper spraying on the first main surface of the aluminum silicon carbide plate to form a first copper spraying layer; s2, welding the heat dissipation column to the first copper spraying layer; and S3, performing second copper spraying on the second main surface of the aluminum silicon carbide plate to form a second copper spraying layer.
Optionally, the method for performing the first copper spraying and/or the second copper spraying is cold spraying, and the conditions of the first copper spraying and the second copper spraying independently comprise: the temperature is 20-200 ℃, and the pressure is 30-40 MPa; the first copper-sprayed layer has the bonding strength of 100-300 MPa, the oxidation rate of 0-0.3%, the porosity of 0-0.5% and the thermal conductivity of 320-400W/(m.K).
Optionally, in step S3, the amount of the metallic copper in the second copper spraying is such that the thickness of the second copper spraying layer is 20 to 250 μm.
A fourth aspect of the present disclosure provides a method of preparing a heat-dissipating component, the method comprising: the heat dissipation base plate is prepared by the method of the third aspect of the disclosure.
Optionally, the heat dissipation element further comprises a copper-clad ceramic substrate, and the method comprises: and S4, welding the copper-coated ceramic substrate on the surface of the second copper-spraying layer in a bonding mode.
Optionally, the copper-clad ceramic substrate includes a ceramic insulating plate having a first surface and a second surface disposed oppositely, the first surface and the second surface being respectively provided with a first copper layer and a second copper layer with different thicknesses, and the method includes: and welding the first copper layer of the copper-clad ceramic substrate on the surface of the second copper-spraying layer in a fitting manner.
A fifth aspect of the present disclosure provides a heat-dissipating component manufactured by the method of the fourth aspect of the present disclosure.
The sixth aspect of the present disclosure provides an IGBT module including an IGBT circuit board and the heat dissipation element according to the second aspect of the present disclosure and the fifth aspect of the present disclosure.
Through the technical scheme, the heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column welded on the aluminum silicon carbide plate, so that the heat dissipation bottom plate has a linear expansion coefficient which is more matched with that of the ceramic circuit substrate, the stability of the module packaging performance can be improved, and the service life is prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a schematic structural diagram of an embodiment of a heat dissipation element of the present disclosure.
Description of the reference numerals
1 aluminum silicon carbide plate 2 first copper spraying layer
3 solder layer 4 heat dissipation column
51 first metallic nickel layer 6 DBC solder layer
7 copper-clad ceramic substrate 8 second copper-sprayed layer
71 second copper layer 72 first copper layer
73 ceramic insulating plate
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
In the present disclosure, the use of directional words such as "up and down" generally means up and down in the normal use state of the device, unless stated to the contrary. The "inner and outer" are with respect to the outline of the device itself.
As shown in fig. 1, a first aspect of the present disclosure provides a heat sink base plate, which includes an aluminum silicon carbide board 1 and a heat sink column 4, where the aluminum silicon carbide board 1 has a first main surface and a second main surface that are oppositely disposed, at least a portion of the first main surface is covered with a first copper-sprayed layer 2, at least a portion of the second main surface is covered with a second copper-sprayed layer 8, the heat sink column is welded to the first copper-sprayed layer 2, and the heat sink column 4 is a copper-containing heat sink column.
The heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column welded on the aluminum silicon carbide plate, so that the heat dissipation bottom plate has a linear expansion coefficient which is more matched with that of the ceramic circuit substrate, the stability of the module packaging performance can be improved, and the service life is prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
According to the present disclosure, the copper-containing heat-dissipating stud means a heat-dissipating stud known to those skilled in the art, that is, the material of the heat-dissipating stud contains metallic copper, and the heat-dissipating stud may also contain inorganic non-metallic material and/or metallic material, for example, one or more of metallic zinc, manganese, aluminum, tin, lead, silicon and silver, and further, in order to enhance the heat-dissipating effect of the heat-dissipating stud, the heat-dissipating stud may be a metallic copper heat-dissipating stud or a copper alloy heat-dissipating stud, for example, at least one of a brass heat-dissipating stud, a red copper heat-dissipating stud, a bronze heat-dissipating stud and a white copper heat-dissipating stud. The content of copper in the heat-dissipating stud can vary within a wide range, for example, the content of metallic copper can be 60 to 100% by weight, preferably 90 to 100% by weight.
According to the present disclosure, the shape of the heat dissipation pillar is not particularly required, for example, the heat dissipation pillar may be a pillar with one end welded to the aluminum silicon carbide plate and the other end being a free end, in an embodiment of the present disclosure, the heat dissipation pillar may be formed as a cylinder or a truncated cone, the axial direction of the heat dissipation pillar may be perpendicular to the first main surface of the aluminum silicon carbide plate, so as to facilitate the welding operation and improve the heat dissipation effect, one bottom surface of the cylinder or the truncated cone may be welded to the first copper spraying layer, and the other end opposite thereto may be a free end, wherein in an embodiment of the truncated cone heat dissipation pillar, the large end of the truncated cone heat dissipation pillar may be welded to the first copper spraying layer, and the small end may be a free end, so as to facilitate the mold drawing and further improve the heat dissipation effect. Furthermore, the diameter of the heat dissipation column can be 1-6 mm, and preferably 2.5-4.5 mm; the axial height can be 3-10 mm, and preferably 5-8 mm; the draft angle of the heat-dissipating stud may be 0 ° to 5 °, preferably 0 ° to 2 °. In other embodiments of the present disclosure, the heat dissipation pillar may be a prism such as at least one of a triangular prism, a quadrangular prism, and a pentagonal prism.
According to the present disclosure, the number of the heat dissipation pillars in the heat dissipation base plate is not limited, and may be one or more, further, in order to improve the heat dissipation effect, the heat dissipation base plate may include a plurality of heat dissipation pillars, and the plurality of heat dissipation pillars may be welded on the first copper spraying layer in parallel at intervals. The number and the distribution form of the heat dissipation columns are not particularly limited, and can be selected according to the heat dissipation area and the product weight requirement, for example, the number of the heat dissipation columns can be 150-1500, and preferably 300-1100; among a plurality of heat dissipation posts, the distance of two adjacent heat dissipation posts can be 2.5 ~ 15mm, preferably 3.5 ~ 10mm, and wherein the distance of two adjacent heat dissipation posts refers to the post heart interval, the interval of two adjacent heat dissipation post bottom surface centers promptly. The shape of the plurality of heat-dissipating studs may be the same or different, and is preferably the same for ease of preparation.
Aluminum silicon carbide plates (AlSiC plates) may be known to those skilled in the art in light of this disclosure as composites formed by aluminum composited with silicon carbide.
According to the present disclosure, the first copper-sprayed layer can effectively improve the bonding strength with the aluminum silicon carbide board and the heat dissipation pillar, respectively, wherein the thickness of the first copper-sprayed layer can be varied within a wide range, for example, the thickness of the first copper-sprayed layer can be 10 to 300 μm, preferably 20 to 250 μm, and further preferably 30 to 150 μm. Within the above preferable range, the mechanical strength of the first copper-sprayed layer is more suitable, and the bonding force to the aluminum silicon carbide plate and the heat dissipation post is stronger.
According to the present disclosure, the second copper-sprayed layer can effectively improve the bonding strength between the copper-coated ceramic substrate and the heat dissipation base plate, wherein the thickness of the second copper-sprayed layer can be varied within a wide range, for example, the thickness of the second copper-sprayed layer can be 10 to 300 μm, preferably 20 to 250 μm, and further preferably 30 to 150 μm. Within the above preferable range, the second copper-clad layer has more suitable mechanical strength and stronger bonding force to the copper-clad ceramic substrate and the aluminum silicon carbide plate.
According to the present disclosure, in order to improve the soldering strength between the heat dissipation pillar and the aluminum silicon carbide plate, in one embodiment of the present disclosure, the heat dissipation base plate may include a solder layer disposed between the heat dissipation pillar and the first copper spray layer. The thickness of the solder layer can vary within a wide range, for example, from 20 to 150 μm. The solder layer may contain solder, the kind of solder may be conventional in the art, preferably, the solder may include lead-based solder and/or lead-free solder, preferably lead-free solder for environmental protection; the lead-based solder may include PbSn and/or PbSnAg, and the lead-free solder may include at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge, and Sn-Cu-Ni.
According to the present disclosure, in order to protect the heat dissipation base plate from corrosion, at least a portion of the surface of the aluminum silicon carbide plate in the present disclosure may be covered with a protective layer, and preferably, the surface of the aluminum silicon carbide plate may include a heat dissipation column welding area located on the first main surface and a non-heat dissipation column welding area other than the welding area, at least the non-heat dissipation column welding area may be covered with the protective layer, and the heat dissipation column welding area may be covered or not covered with the protective layer; in the case that the heat dissipation pillar bonding area is coated with the protection layer, as shown in fig. 1, the first copper-spraying layer 2 may be coated on the protection layer, and in the case that the heat dissipation pillar bonding area is not coated with the protection layer, the first copper-spraying layer may be directly coated on the surface of the aluminum silicon carbide plate. That is, as shown in fig. 1, the protective layer may cover the entire surface of the aluminum silicon carbide plate 1, in which case there is a protective layer between the first copper-sprayed layer 2 and the aluminum silicon carbide plate 1; in another case, the protection layer covers the surface of the aluminum silicon carbide plate except the welding area of the heat dissipation column, the aluminum silicon carbide plate of the welding area of the heat dissipation column is exposed, and the first copper-spraying layer covers the surface of the exposed welding area of the heat dissipation column. The protective layer may be a first metal nickel layer 51, preferably a nickel plating layer, which are known to those skilled in the art and will not be described herein. The protective layer of the above preferred kind is distributed with micropores with appropriate number and pore diameter, and in the embodiment that the first copper spraying layer covers the protective layer, the copper in the first copper spraying layer can enter the micropores on the surface of the protective layer, thereby further improving the bonding force between the first copper spraying layer and the aluminum silicon carbide plate and the weldability of the heat dissipation copper column.
Furthermore, the thickness of the first metal nickel layer can be 4-20 μm, preferably 5-15 μm. The protective layer with the preferable thickness range can effectively protect and prevent the aluminum silicon carbide plate from corrosion and has proper mechanical property and welding property.
Further, in order to protect the heat dissipation post and prevent corrosion, in one embodiment of the present disclosure, the surface of the heat dissipation post may include a welding surface and a non-welding surface other than the welding surface, and at least the non-welding surface may be coated with a second nickel metal layer; can cladding or not cladding on the face of weld have the second metallic nickel layer, under the circumstances that the cladding has the second metallic nickel layer on the face of weld, can also have the second metallic nickel layer between first copper spraying layer and the heat dissipation post, under the circumstances that the face of weld does not have the cladding of second metallic nickel layer, first copper spraying layer can be directly with face of weld welded connection. In other words, the second metal nickel layer can wrap all surfaces of the heat dissipation post, and the second metal nickel layer is arranged between the heat dissipation post and the first copper spraying layer; under another kind of circumstances, the non-welding face of the surface except that the welding face of heat dissipation post covers has the second metal nickel layer, and the welding face of heat dissipation post is exposed, and this exposed welding face is direct to spout the copper layer welding with first after the welding, in the implementation that this disclosed radiating bottom plate has the solder layer, this exposed welding face can be direct and solder contact and welding, because the wettability of copper-containing material and solder is better, the welding combines better, can further improve the cohesion of heat dissipation post and aluminium carborundum board. The welding surface of the heat dissipation column refers to the surface which is in welding contact with the aluminum silicon carbide plate when the heat dissipation column is welded with the aluminum silicon carbide plate.
Wherein, the thickness of the second metal nickel layer can be 2 to 20 μm, preferably 5 to 15 μm. The second metal nickel layer with the preferable thickness range can effectively protect and prevent the heat dissipation column from corrosion and has proper mechanical property and welding property.
In another specific embodiment of the present disclosure, the heat-dissipating base plate may further include a third nickel metal layer, where the third nickel metal layer may wrap part or all of the surface of the heat-dissipating base plate, and preferably, the third nickel metal layer wraps the surface of the heat-dissipating base plate not covered by the first nickel metal layer, so that all of the surface of the heat-dissipating base plate is wrapped by the first nickel metal layer and/or the third nickel metal layer; further preferably, the third metallic nickel layer may wrap all surfaces of the heat-dissipating base plate. At this moment, the heat dissipation column may be covered or not covered with the second metal nickel layer, preferably, the heat dissipation column is not covered with the second metal nickel layer, in this embodiment, the whole heat dissipation bottom plate after the aluminum silicon carbide plate is welded with the heat dissipation column is covered with the third metal nickel layer, which is more convenient for nickel plating operation.
Wherein, the thickness of the third metal nickel layer can be 2 to 20 μm, preferably 5 to 15 μm. The third metal nickel layer with the preferable thickness range can effectively protect the whole radiating bottom plate from corrosion and does not influence the overall performance of the radiating bottom plate.
As shown in fig. 1, a second aspect of the present disclosure provides a heat dissipating element including the heat dissipating base plate of the first aspect of the present disclosure.
Further, the heat dissipation element may further include a copper-clad ceramic substrate 7, and the copper-clad ceramic substrate 7 may be conformably soldered to the surface of the second copper-sprayed layer 8.
According to the present disclosure, a copper-clad ceramic substrate is understood to mean an electronic base material made by directly sintering a copper foil on a ceramic surface using a dbc (direct Bond coater) technique. Further, as shown in fig. 1, the copper-clad ceramic substrate 7 may include a ceramic insulating plate 73, the ceramic insulating plate 73 may have a first surface and a second surface that are oppositely disposed, the first surface and the second surface may be provided with a first copper layer 72 and a second copper layer 71, respectively, and the first copper layer 72 may be soldered to the second main surface of the aluminum silicon carbide plate 1.
According to the present disclosure, the thicknesses of the first and 72 second copper layers 71 may vary within a wide range, the thicknesses of the first and second copper layers may be equal or different, preferably different, and preferably the ratio of the thicknesses of the first and second copper layers may be (0.3 to 1.2): 1, preferably (0.5-0.9): 1, the thickness of the second copper layer can be 0.1-0.5 mm.
According to the present disclosure, the ceramic insulating plate may be of a kind conventional in the art, and is preferably at least one of an alumina plate, an aluminum nitride plate, and a silicon nitride plate.
According to the present disclosure, the copper-clad ceramic substrate may be soldered to the heat sink base plate by a conventional method in the art, for example, by soldering, i.e., the copper-clad ceramic substrate 7 and the heat sink base plate may have a DBC solder layer 6 therebetween as shown in fig. 1.
In order to further improve the welding strength of the copper-clad ceramic substrate and the heat dissipation base plate, in an embodiment of the present disclosure, at least a part of the second main surface of the aluminum silicon carbide plate may be covered with a second copper-sprayed layer, and the first copper layer of the copper-clad ceramic substrate may be conformally welded to the surface of the second copper-sprayed layer.
In the embodiment of the present disclosure in which the surface of the heat dissipation base plate is covered with the protective layer, further, the second copper-sprayed layer may cover the second main surface of the heat dissipation base plate covered with the protective layer. In another embodiment, the surface of the heat dissipation base plate may be composed of a heat dissipation pillar welding area, a copper-clad ceramic substrate welding area and a non-welding area, the non-welding area may be covered with a protective layer, the first copper-sprayed layer may directly cover the surface of the heat dissipation pillar welding area, and the second copper layer may directly cover the surface of the copper-clad ceramic substrate welding area.
The heat dissipation element disclosed by the invention has the heat dissipation bottom plate with a proper thermal expansion coefficient, the heat matching performance with the copper-clad ceramic substrate is good, and the heat dissipation performance of the bottom plate is further enhanced by the copper-clad heat dissipation column.
A third aspect of the present disclosure provides a method of manufacturing a heat radiation base plate, the heat radiation base plate including an aluminum silicon carbide plate and a heat radiation column, the aluminum silicon carbide plate having a first main surface and a second main surface that are oppositely disposed, the heat radiation column being a copper-containing heat radiation column, the method including the steps of: s1, spraying copper on the first main surface of the aluminum silicon carbide plate to form a first copper spraying layer; s2, welding the heat dissipation column on the surface of the first copper spraying layer; and S3, performing second copper spraying on the second main surface of the aluminum silicon carbide plate to form a second copper spraying layer.
According to the method, the copper-containing heat dissipation column is welded on the aluminum silicon carbide plate, so that the linear expansion coefficient matching of the aluminum silicon carbide plate and the ceramic circuit substrate after packaging can be ensured, the module packaging performance is more stable, the service life is prolonged, and the heat dissipation performance of the bottom plate is improved by using the copper-containing heat dissipation column with high heat conductivity; simultaneously, through the welding department setting between copper-containing heat dissipation post and aluminium carborundum board spout the copper layer, provide a fusing point and the suitable and high tie layer of mechanical strength of coefficient of thermal expansion, can further improve the cohesion between copper-containing heat dissipation post and the aluminium carborundum board
In one embodiment of the present disclosure, the method of forming the first copper-sprayed layer and the second copper-sprayed layer may each independently be cold spray, and the method and operating conditions for performing the second copper-sprayed layer may be the same as or different from, preferably the same as, the first copper-sprayed layer; the conditions of the cold spraying may include: the temperature is 20-200 ℃, preferably 50-150 ℃, and the pressure can be 30-40 MPa, preferably 35-38 MPa; the bonding strength of the first copper spraying layer and the second copper spraying layer obtained by cold spraying under the above conditions may be 100 to 300MPa, further 150 to 295MPa, the oxidation rate may be 0 to 0.3%, further 0 to 0.1%, the porosity may be 0 to 0.5%, further 0 to 0.3%, and the thermal conductivity may be greater than 80% of the thermal conductivity of oxygen-free copper, and specifically may be 320 to 400W/(m · K). In this embodiment, by the cold spraying method, a first copper-sprayed layer and a second copper-sprayed layer which are further optimized can be obtained, the first copper-sprayed layer and the second copper-sprayed layer have better bonding strength, lower oxidation rate and more appropriate porosity and thermal conductivity, and the bonding strength of the heat-dissipating copper pillar and the aluminum silicon carbide plate through welding and the welding bonding strength of the copper-coated ceramic substrate and the aluminum silicon carbide plate can be further promoted. Under the above preferred cold spray operating conditions, the overall properties of the resulting first copper-sprayed layer can be further improved. In other embodiments of the present disclosure, the method of forming the first and second copper sprayed layers may be thermal spraying or copper plating.
The method of soldering may be conventional in the art, for example, a heat sink stud may be soldered to the first copper sprayed layer surface of an aluminum silicon carbide board by solder in accordance with the present disclosure. Specifically, in one embodiment of the present disclosure, a method of welding may include: and (3) loading the heat dissipation column into the guide plate, enabling the welding surface of the guide plate to face upwards, then sequentially loading and stacking the solder and the aluminum silicon carbide plate (the first copper spraying layer faces the solder), and finally covering the guide plate with a pressing block and feeding the guide plate into a welding furnace to be heated for welding. The welding conditions can also be conventional in the art, and for example, the preheating temperature is 150-270 ℃, the welding temperature is 270-450 ℃, and the welding can be carried out in a reducing atmosphere or an inert atmosphere. The amount of the solder may be such that the thickness of the solder layer is 20 to 150 μm. The solder species may be conventional in the art, preferably the solder may comprise a lead-based solder and/or a lead-free solder, preferably a lead-free solder for environmental protection; the lead-based solder may include PbSn and/or PbSnAg, and the lead-free solder may include at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge, and Sn-Cu-Ni.
According to the present disclosure, in order to protect the heat dissipation base plate and prevent corrosion, a protective layer may be formed on at least a portion of the surface of the aluminum silicon carbide plate, and preferably, the method may include, before step S1, performing a first nickel plating on the surface of the aluminum silicon carbide plate to obtain the aluminum silicon carbide plate wrapped with the protective layer, and then performing a copper spraying on at least a portion of a first main surface of the aluminum silicon carbide plate wrapped with the protective layer to form a first copper spraying layer; the protective layer is wrapped on the surface of the aluminum silicon carbide plate, so that the aluminum silicon carbide plate can be effectively protected from corrosion, and the first copper spraying layer is favorably combined with the aluminum silicon carbide plate; further, before the copper spraying, a sand blasting pretreatment may be performed or not performed on at least a portion of the first main surface of the aluminum silicon carbide plate wrapped with the protective layer, that is, before the copper spraying, the method may further optionally include performing a sand blasting pretreatment on at least a portion of the region of the protective layer wrapped on the surface of the aluminum silicon carbide plate, where in an embodiment in which the sand blasting pretreatment is performed, at least a portion of the protective layer on the first main surface may be removed, so as to obtain a bare aluminum silicon carbide plate surface on at least a portion of the first main surface, and the bare aluminum silicon carbide plate surface may be used to be directly covered by the first copper spraying layer.
The term "blasting pretreatment" may be used to refer to a process of cleaning and roughening the surface of a substrate by the impact of a high-velocity sand stream, and in the method of the present disclosure, may be used to remove the protective layer from the first major surface to expose at least a portion of the first major surface.
The method and the operation conditions for performing the first nickel plating are well known to those skilled in the art, for example, the method for performing the first nickel plating may be electroplating or chemical plating, and the amount of the metal nickel used for performing the first nickel plating may be such that the thickness of the first metal nickel layer is 4 to 20 μm, preferably 5 to 15 μm.
According to the present disclosure, the first copper spraying layer obtained by performing the first copper spraying can effectively improve the bonding strength with the aluminum silicon carbide board and the heat dissipation column, wherein the thickness of the first copper spraying layer can be changed in a wide range, for example, the amount of copper used in the first copper spraying layer can be such that the thickness of the first copper spraying layer is 10 to 300 μm, preferably 20 to 250 μm, and further preferably 30 to 150 μm. Within the above preferable range, the mechanical strength of the first copper-sprayed layer is more suitable, and the bonding force to the aluminum silicon carbide plate and the heat dissipation post is stronger.
According to the present disclosure, the second copper-spraying layer obtained by performing the second copper-spraying can effectively improve the bonding strength between the copper-coated ceramic substrate and the heat dissipation base plate, wherein the thickness of the second copper-spraying layer can be changed in a wide range, for example, the amount of copper used in the second copper-spraying layer can be such that the thickness of the second copper-spraying layer is 10 to 300 μm, preferably 20 to 250 μm, and more preferably 30 to 150 μm. Within the above preferable range, the second copper-sprayed layer has more suitable mechanical strength and stronger bonding force to the aluminum silicon carbide plate and the heat dissipation post.
According to the disclosure, in order to improve the welding effect, the heat dissipation pillar may be subjected to a surface cleaning treatment before welding, and the surface cleaning treatment may include a method that is conventional in the art, such as an ultrasonic cleaning method, and specifically, may include steps of ultrasonic cleaning with a cleaning oil powder solution, then ultrasonic cleaning with clear water, and drying.
In one embodiment of the present disclosure, to protect the heat-dissipating stud from corrosion, the method may include: before step S2, a second nickel plating is performed on the surface of the heat-dissipating stud to form a second nickel metal layer, which may wholly or partially include the heat-dissipating stud.
In order to further improve the welding strength between the heat dissipation column and the aluminum silicon carbide plate, in a preferred embodiment of the present disclosure, the method may further include: before step S2, the portion of the second metallic nickel layer on the surface of the bonding surface of the heat-dissipating stud is removed to expose the bonding surface of the heat-dissipating stud, and the exposed bonding surface is directly bonded to the first copper-spraying layer. The method of removing the second metallic nickel layer may be well known to those skilled in the art, such as grinding or cutting.
For example, in a preferred embodiment of the present disclosure, the aluminum silicon carbide board may be first nickel-plated to obtain a protective layer-covered aluminum silicon carbide board, the surface of the protective layer-covered aluminum silicon carbide board is copper-plated to form a first copper-plated layer, the surface of the heat dissipation pillar is second nickel-plated to form a second metal nickel layer, the second metal nickel layer covered on the surface of the bonding surface of the heat dissipation pillar is removed to expose the bonding surface, and the exposed bonding surface is then welded to the first copper-plated layer to obtain the heat dissipation base plate. Wherein, before the surface of the aluminum silicon carbide plate covered with the protective layer is sprayed with copper to form the first copper spraying layer, part of the protective layer on the first main surface can be removed by sand spraying. The term "blasting pretreatment" is used herein to mean a process of cleaning and roughening the surface of a substrate by the impact of a high-velocity sand stream, and the specific method and operating conditions thereof are conventional in the art and will not be described herein.
The method for forming the second nickel metal layer may be conventional in the art, and for example, includes electroplating or chemical plating, and the amount of the metal nickel used for the second nickel plating may be such that the thickness of the second nickel metal layer is 2 to 20 μm, preferably 5 to 15 μm.
In another embodiment of the present disclosure, to further protect the integrated heat sink base plate from corrosion, the method may comprise: after step S2, the heat-dissipating substrate is subjected to third nickel plating to form a third metallic nickel layer. For example, in a preferred embodiment, first nickel plating may be performed on an aluminum silicon carbide plate to obtain an aluminum silicon carbide plate covered with a protective layer, copper spraying is performed on the surface of the aluminum silicon carbide plate covered with the protective layer to form a first copper spraying layer, then a copper-containing heat dissipation column is welded to the first copper spraying layer to obtain a heat dissipation base plate, and finally third nickel plating is performed on the entire heat dissipation base plate to obtain a heat dissipation base plate with a third metal nickel layer on the surface. Wherein, before the surface of the aluminum silicon carbide plate covered with the protective layer is sprayed with copper to form the first copper spraying layer, part of the protective layer on the first main surface can be removed by sand spraying. The method of performing the third nickel plating may be the same or different, preferably the same, as the first nickel plating, and the thickness of the third nickel metal layer may be the same or different, preferably the same, as the first nickel metal layer.
Aluminum silicon carbide plates may be known to those skilled in the art in light of this disclosure as composites of aluminum and silicon carbide having properties of low density, high thermal conductivity, and tunable coefficient of thermal expansion. The aluminum silicon carbide plates of the present disclosure may be commercially available or homemade. In a specific embodiment of the present disclosure, the method may further include a step of preparing the aluminum silicon carbide plate by a pressure aluminizing method, and the specific steps include, for example, placing the silicon carbide substrate in a mold, preheating the silicon carbide substrate to 500 to 700 ℃, then pouring molten aluminum liquid into the mold, removing gas by vacuum pumping, pressurizing the molten aluminum liquid to 4 to 10MPa by nitrogen gas, filling the mold with the molten aluminum liquid uniformly, cooling, and demolding to obtain the aluminum silicon carbide plate.
A fourth aspect of the present disclosure provides a method of preparing a heat-dissipating component, the method comprising: the heat-dissipating base plate is prepared by the method of the third aspect of the present disclosure.
Further, the copper-clad ceramic substrate may include a ceramic insulating plate, the ceramic insulating plate may have a first surface and a second surface disposed opposite to each other, and the first surface and the second surface may be provided with a first copper layer and a second copper layer having different thicknesses, respectively, and the method may include: the first copper layer of the copper-clad ceramic substrate is conformally bonded to the surface of the second copper-sprayed layer by a bonding method which is conventional in the art, for example, by soldering.
A fifth aspect of the present disclosure provides a heat-dissipating component prepared by the method of the fourth aspect of the present disclosure.
A sixth aspect of the present disclosure provides an IGBT module including an IGBT circuit board and the heat dissipation element of the second and fifth aspects of the present disclosure.
The present disclosure is further described below by way of examples, but the present disclosure is not particularly limited thereto. In the following examples of the present disclosure, the thickness of the film was measured using a film thickness meter (Fischer MPOR, germany), and the thickness measurement results were the average of the thickness values of 4 test positions taken in the film.
Example 1
This embodiment is used to illustrate the heat dissipation base plate and the manufacturing method thereof of the present disclosure. The method comprises the following steps:
1. and (3) air pressure casting infiltration forming of an AlSiC plate: adopting air pressure infiltration cabin body equipment to mold and preheat the SiC matrix to the temperature of 500-;
2. plating nickel on the surface of the AlSiC plate, wherein the thickness of the nickel layer is 12 mu m;
3. welding a heat dissipation column region on the first main surface of the AlSiC plate with the nickel plated surface, and performing cold spraying copper to form a first copper spraying layer with the thickness of 100 mu m; cold spraying copper on the second main surface of the copper-clad ceramic substrate to form a second copper-sprayed layer with a thickness of 100 μm
4. Cleaning the surface of the heat dissipation column: ultrasonically cleaning by using a metal copper heat dissipation column through a washing oil powder solution, ultrasonically cleaning by using clear water, and drying; the metal copper heat dissipation column is cylindrical, the diameter of the metal copper heat dissipation column is 4.18mm, and the height of the metal copper heat dissipation column is 8 mm; the distance between two adjacent heat dissipation columns is 5.8 mm;
5. welding: the guide plate, the solder and the AlSiC plate (the first main surface faces the solder) which are arranged in the copper radiating column are sequentially stacked, and finally, the pressing block is covered, the copper radiating column is placed into a welding furnace in inert atmosphere, preheated to the temperature of 150 ℃ plus 270 ℃, and welded at the temperature of 270 ℃ plus 450 ℃ to obtain the radiating bottom plate (368 column) of the embodiment.
6. Coating copper on ceramic substrate (Al)2O3DBC) was soldered to the second main surface of the heat-dissipating substrate, to obtain the heat-dissipating device of this example, the second copper layer (the upper surface copper layer of the ceramic) had a thickness of 0.3mm, and the first copper layer (the lower surface copper layer of the ceramic) had a thickness of 0.4 mm.
Examples 2 to 5
The method and material of example 1 were used, except that Al2O3The thicknesses of the copper layers on both sides of the DBC are different, as shown in table 2.
Example 6
The method and material of example 1 were used, except that an AlN copper-clad ceramic substrate was used.
Comparative example 1
The method and material of example 1 were used except that the heat-dissipating stud was replaced with an Al heat-dissipating stud.
Comparative example 2
The method and material of example 1 were used except that the first and second copper spray treatments of step 2 were not included.
Comparative example 3
The method and material of example 1 were used except that the heat-dissipating stud was replaced with an Al heat-dissipating stud, Al2O3Conversion of DBC to Si3N4AMB。
Test example 1
Testing the packaging heat dissipation performance:
the heat dissipation elements of examples 1 and 6 and comparative examples 1 to 3 were respectively manufactured into packaged IGBT modules, and the packaged heat dissipation performance was tested on a TiX500Fluke thermal infrared imager/reactive rack. Temperature rise test conditions: VDC bus voltage 750V; the carrier frequency is 8 kHz; the output frequency is 100 Hz; the flow rate of the cooling liquid is 8L/min; the cooling liquid was cooled to 55 ℃.
And (3) testing the welding bonding force of the heat dissipation column: and (3) respectively testing the bonding force between the 30 heat dissipation columns and the aluminum silicon carbide plate in the examples 1 and 6 and the comparative examples 1-3 by adopting a micro-welding point strength tester.
DBC weld strength test: and testing the horizontal direction welding strength of the DBC and the AlSiC plates of the examples 1 and 6 and the comparative examples 1-3 by using a tensile testing machine.
The test results are shown in Table 1.
TABLE 1
The data in table 1 results show that: al heat-dissipating stud + AlSiC plate + Si of comparative example 33N4Compared with AMB, the Cu heat-dissipating stud + AlSiC plate + Al of example 12O3The DBC package can have comparable heat dissipation efficiency below 150A;
compared with the Al heat dissipation column, the AlSiC plate and the AlN DBC, the Cu heat dissipation column, the AlSiC plate and the Al2O3DBC packaging has certain advantages in heat dissipation efficiency, the temperature of the latter packaged chip can be lowered by 2 ℃ at 200A, namely the AlSiC-Cu heat dissipation plate can be used for manufacturing AlN DB with higher priceC is switched into Al with lower price2O3DBC, thereby reducing packaging costs;
compared with the AlSiC board surface of the comparative example 2 in which the Cu radiating column is directly welded, the Cu radiating column is welded after copper is cold sprayed in the area of the AlSiC board surface welded with the radiating column in the embodiment 1, and the bonding force between the radiating column and the bottom board is obviously improved;
compared with the AlSiC board of the comparative example 2 in which the DBC is directly welded after nickel plating, the method for welding the DBC after cold spraying copper on the AlSiC board of the example 1 obviously improves the binding force between the DBC and the bottom board.
Test example 2
The packaged IGBT modules manufactured by the heat dissipation elements of embodiments 1 to 5 are subjected to simulation analysis, and the simulation process is as follows: establishing a model, dividing grids, setting parameters, operating calculation and reporting a result;
the parameters used for the simulation were: the ambient temperature was 85 ℃, and this analysis did not take into account the natural convection between the module and the outside air at 85 ℃. The fluid was water, the initial temperature of the fluid was 65 ℃ and the inlet flow rate was 0.735 m/s. The power is loaded on the upper surface of the chip, the total loss of the system is 2kW, the distribution ratio of the loss of the two chips, namely the FRD is 3:1, the junction temperature of the chip is calculated, and the test result is listed in Table 2.
TABLE 2
As can be seen from the data in Table 2, copper-clad ceramic substrates (Al)2O3DBC) has a good effect when the thickness of the upper copper layer is 0.3mm and the thickness of the lower copper layer is 0.25mm, the copper layer of the copper-clad ceramic substrate is thinner, which is more beneficial to reducing junction temperature, and the preferable thickness ratio of the first copper layer to the second copper layer is (0.5-0.9): 1 is more favorable for junction temperature reduction.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. In order to avoid unnecessary repetition, various possible combinations will not be separately described in this disclosure.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (19)
1. The utility model provides a radiating bottom plate, its characterized in that, this radiating bottom plate includes aluminium silicon carbide board and heat dissipation post, aluminium silicon carbide board has relative first main surface and the second main surface that sets up, at least part first main surface coats and is stamped first copper spraying layer, at least part second main surface coats and is stamped the second and spouts the copper layer, the heat dissipation post weld in first copper spraying layer, the heat dissipation post is copper-containing heat dissipation post.
2. The heat spreader plate of claim 1, wherein the heat spreader beam is a copper metal or copper alloy heat spreader beam.
3. The heat spreader plate of claim 1, wherein the heat spreader plate comprises a plurality of heat spreader posts soldered to the first copper-sprayed layer surface in parallel and spaced apart.
4. The heat spreading base plate according to claim 1, wherein the heat spreading base plate comprises a solder layer disposed between the heat spreading posts and the first copper-sprayed layer.
5. The heat spreading base plate according to claim 4, wherein the solder layer contains solder, the solder comprising lead-based solder and/or lead-free solder; the lead-based solder comprises PbSn and/or PbSnAg, and the lead-free solder comprises at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge and Sn-Cu-Ni.
6. The heat dissipation base plate as claimed in claim 1, wherein the second copper-sprayed layer has a thickness of 20 to 250 μm.
7. A heat dissipating component, comprising the heat dissipating base plate according to any one of claims 1 to 6.
8. The heat dissipating component of claim 7, further comprising a copper-clad ceramic substrate conformably bonded to the surface of the second copper-sprayed layer.
9. The heat dissipating component of claim 8, wherein the copper-clad ceramic substrate comprises a ceramic insulating plate having a first surface and a second surface disposed opposite to each other, the first surface and the second surface of the ceramic insulating plate are respectively provided with a first copper layer and a second copper layer having different thicknesses, and the first copper layer is conformally welded to the surface of the second copper-sprayed layer.
10. The heat dissipating element of claim 9, wherein the ratio of the thicknesses of the first and second copper layers is (0.5-0.9): 1, the thickness of the second copper layer is 0.1-0.5 mm.
11. The heat-dissipating component of claim 9, wherein the ceramic insulating plate is at least one of an aluminum oxide plate, an aluminum nitride plate, and a silicon nitride plate.
12. A method of making a heat sink base plate comprising an aluminum silicon carbide plate having first and second oppositely disposed major surfaces and a heat-dissipating stud comprising copper, the method comprising the steps of:
s1, performing first copper spraying on the first main surface of the aluminum silicon carbide plate to form a first copper spraying layer;
s2, welding the heat dissipation column to the first copper spraying layer;
and S3, performing second copper spraying on the second main surface of the aluminum silicon carbide plate to form a second copper spraying layer.
13. The method of claim 12, wherein the first and/or second copper spraying are performed as cold spray, respectively, and the conditions of the first and second copper spraying each independently comprise: the temperature is 20-200 ℃, and the pressure is 30-40 MPa; the first copper-sprayed layer has the bonding strength of 100-300 MPa, the oxidation rate of 0-0.3%, the porosity of 0-0.5% and the thermal conductivity of 320-400W/(m.K).
14. The method according to claim 12, wherein in step S3, the amount of metallic copper in the second copper spraying is such that the thickness of the second copper spraying layer is 20-250 μm.
15. A method of making a heat-dissipating component, the method comprising: the method of any one of claims 12 to 14 is used to produce a heat sink base.
16. The method of claim 15, wherein the heat spreading element further comprises a copper clad ceramic substrate, the method comprising:
and S4, welding the copper-coated ceramic substrate on the surface of the second copper-spraying layer in a bonding mode.
17. The method of claim 16, wherein the copper-clad ceramic substrate comprises a ceramic insulator plate having first and second oppositely disposed surfaces provided with first and second copper layers of unequal thickness, respectively, the method comprising: and welding the first copper layer of the copper-clad ceramic substrate on the surface of the second copper-spraying layer in a fitting manner.
18. A heat-dissipating component produced by the method of any one of claims 15 to 17.
19. An IGBT module, characterized in that the IGBT module comprises an IGBT circuit board and a heat dissipation element as claimed in any one of claims 7 to 11 and claim 18.
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| CN103779291A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Heat dissipation substrate for encapsulating power module |
| CN104561989A (en) * | 2015-01-06 | 2015-04-29 | 湖南浩威特科技发展有限公司 | Cold spraying and copper plating method for aluminum silicon carbide and electronic packaging bottom plate obtained by same |
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| CN202394961U (en) * | 2011-12-09 | 2012-08-22 | 日月光半导体（上海）股份有限公司 | Semiconductor wafer with radiating columns and packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103779291A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Heat dissipation substrate for encapsulating power module |
| CN104561989A (en) * | 2015-01-06 | 2015-04-29 | 湖南浩威特科技发展有限公司 | Cold spraying and copper plating method for aluminum silicon carbide and electronic packaging bottom plate obtained by same |
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