CN208767287U - Heat dissipation element and IGBT mould group - Google Patents
Heat dissipation element and IGBT mould group Download PDFInfo
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- CN208767287U CN208767287U CN201820957277.7U CN201820957277U CN208767287U CN 208767287 U CN208767287 U CN 208767287U CN 201820957277 U CN201820957277 U CN 201820957277U CN 208767287 U CN208767287 U CN 208767287U
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- thermal column
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Abstract
This disclosure relates to a kind of heat dissipation element and IGBT mould group.The heat dissipation element includes radiating bottom plate and covers copper ceramic substrate；The radiating bottom plate includes aluminium silicon carbide plate and thermal column, and the aluminium silicon carbide plate has the first main surface and the second main surface being oppositely arranged, and the thermal column is welded in first main surface；The thermal column is cupric thermal column；The copper ceramic substrate that covers snugly is welded in second main surface.The radiating bottom plate of the disclosure includes aluminium silicon carbide plate and the cupric thermal column that is welded on the aluminium silicon carbide plate so that radiating bottom plate have with the more matched linear expansion coefficient of ceramic circuit substrate, can be improved module encapsulation performance stability, prolong the service life；The cupric thermal column for the high heat conductance having in radiating bottom plate further improves heat dissipation performance.
Description
Technical field
This disclosure relates to power module field, and in particular, to a kind of heat dissipation element and IGBT mould group.
Background technique
It is mainly Cu (copper) bottom plate and AlSiC (aluminium silicon-carbon) bottom plate currently used for high-power IGBT module package floor.Phase
Than Cu bottom plate, the linear expansion coefficient of AlSiC bottom plate and ceramic circuit substrate and chip it is thermally matched more excellent, thermal stress is more
It is small, and AlSiC specific strength is high, and module encapsulation performance can be made more stable, improved service life.However, the height prepared by present
Thermally conductive AlSiC thermal conductivity is 200W/ (mK), there is certain gap, and AlSiC bottom plate compared with copper thermal conductivity 380W/ (mK)
Heat dissipation Pin needle be Al (aluminium) material, thermally conductive only 150W/ (mK) more limit contact with coolant liquid radiate efficiency.Together
When, Al Pin needle is by the direct cast form of mold in existing AlSiC radiating bottom plate production process, mold institute when Pin needle demoulds
It is big by frictional force, it is easily damaged, die cost is higher.
Utility model content
Purpose of this disclosure is to provide a kind of heat dissipation element, the heat dissipation element thermal conductivity is good and its linear expansion coefficient and ceramics
The matching of circuit base plate and chip is high.
To achieve the goals above, disclosure first aspect provides a kind of heat dissipation element, which includes heat dissipation bottom
Plate and cover copper ceramic substrate；The radiating bottom plate includes aluminium silicon carbide plate and thermal column, and the aluminium silicon carbide plate has opposite set
The first main surface and the second main surface set, the thermal column are welded in first main surface；The thermal column dissipates for cupric
Plume；The copper ceramic substrate that covers snugly is welded in second main surface.
Optionally, the thermal column is metallic copper thermal column or copper alloy thermal column.
Optionally, the thermal column is formed as cylindrical body or round estrade, the axial direction of the thermal column and the bottom plate matrix
The first main surface it is vertical, and one end of the thermal column and first main surface welding, the other end be free end.
Optionally, the diameter of the thermal column is 1~6mm, axial height is 3~10mm, the draft angle of the thermal column
It is 0 °~5 °.
Optionally, which includes multiple thermal columns, is welded in institute to multiple thermal column parallel intervals
State the first main surface.
Optionally, the distance of the two neighboring thermal column is 2.5~15mm.
Optionally, the radiating bottom plate includes the solder layer being set between the thermal column and first main surface.
Optionally, the solder layer includes lead-based solder layer and/or the Pb-free coating bed of material.
Optionally, the copper ceramic substrate that covers includes ceramic isolation plate, and the ceramic isolation plate has the be oppositely arranged
One surface and second surface, the first surface and second surface of the ceramic isolation plate are respectively equipped with the first different layers of copper of thickness
With the second layers of copper, first layers of copper is snugly welded in second main surface.
Disclosure second aspect provides a kind of IGBT mould group, which includes IGBT circuit board and disclosure first party
Heat dissipation element described in face.
Through the above technical solutions, the heat dissipation element of the disclosure includes being welded and being formed by aluminium silicon carbide plate and cupric thermal column
Radiating bottom plate so that radiating bottom plate have with the more matched linear expansion coefficient of ceramic circuit substrate, can be improved module encapsulation
Stability prolongs the service life；The cupric thermal column for the high heat conductance having in radiating bottom plate further improves heat dissipation
Performance；In addition, the heat dissipation element of the disclosure, which uses, covers copper ceramic substrate DBC, and it is more preferable than traditional DBA current-carrying capability, with aluminium carbon
The heat dissipation matching of SiClx plate and cupric thermal column is also more preferable.
Other feature and advantage of the disclosure will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
Attached drawing is and to constitute part of specification for providing further understanding of the disclosure, with following tool
Body embodiment is used to explain the disclosure together, but does not constitute the limitation to the disclosure.In the accompanying drawings:
Fig. 1 is a kind of structural decomposition diagram of specific embodiment of the heat dissipation element of the disclosure.
Fig. 2 is the structural schematic diagram of another specific embodiment of the heat dissipation element of the disclosure.
Description of symbols
1 aluminium silicon carbide plate, 3 solder layer
4 thermal column, 51 first metal nickel layer
6 DBC solder layers 7 cover copper ceramic substrate
71 second layers of copper, 72 first layers of copper
73 ceramic isolation plates
Specific embodiment
It is described in detail below in conjunction with specific embodiment of the attached drawing to the disclosure.It should be understood that this place is retouched
The specific embodiment stated is only used for describing and explaining the disclosure, is not limited to the disclosure.
In the disclosure, in the absence of explanation to the contrary, the noun of locality used such as " upper and lower " typically refers to device and exists
It is upper and lower under normal operating condition." inside and outside " is for the profile of device itself.
As depicted in figs. 1 and 2, disclosure first aspect provides a kind of heat dissipation element, which includes radiating bottom plate
With cover copper ceramic substrate 7；Radiating bottom plate includes aluminium silicon carbide plate 1 and thermal column 4, and aluminium silicon carbide plate 1 has the be oppositely arranged
One main surface and the second main surface, thermal column 4 are welded in the first main surface；Thermal column 4 is cupric thermal column；Cover copper ceramic substrate
7 are snugly welded in the second main surface.
The radiating bottom plate of the disclosure includes aluminium silicon carbide plate and the cupric thermal column that is welded on the aluminium silicon carbide plate, is made
Radiating bottom plate have with the more matched linear expansion coefficient of ceramic circuit substrate, can be improved module encapsulation performance stability, prolong
Long life；The cupric thermal column for the high heat conductance having in radiating bottom plate further improves heat dissipation performance.
According to the disclosure, what the meaning of cupric thermal column was well known to those skilled in the art, i.e., in the material of thermal column
Containing metallic copper, in thermal column can also there are also inorganic non-metallic material and/or metal materials, such as can containing metallic zinc,
One or more of manganese, aluminium, tin, lead, silicon and silver, further, in order to improve the heat dissipation effect of thermal column, thermal column can be with
For metallic copper thermal column or copper alloy thermal column, for example, brass thermal column, red copper thermal column, bronze thermal column and copper-nickel alloy heat dissipation
At least one of column.The content of copper can change in a big way in thermal column, such as the weight content of metallic copper can be with
It is 60~100%, preferably 90~100%.
According to the disclosure, the shape of thermal column is not specially required, such as aluminium silicon carbide plate, another can be welded in for one end
One end is the column of free end, and in a kind of specific embodiment of the disclosure, thermal column can be formed as cylindrical body or circle
The axial direction of stage body, thermal column can be vertical with the first main surface of aluminium silicon carbide plate, in order to weld operation and improve heat dissipation effect
One of bottom surface of fruit, cylindrical body or round estrade can be welded to connect with aluminium silicon carbide plate, and the other end on the other side can be with
For free end, wherein the big end of round estrade thermal column can be welded with aluminium silicon carbide plate in the embodiment of round estrade thermal column
It connects in succession, small end can be free end, in order to draft and further increase heat dissipation effect.Further, the diameter of thermal column
It can be 1~6mm, preferably 2.5~4.5mm；Axial height can be 3~10mm, preferably 5~8mm；The draft of thermal column
Angle can be 0 °~5 °, preferably 0 °~2 °.In the other embodiments of the disclosure, thermal column can be prism such as trigone
At least one of column, quadrangular and pentagonal prism.
According to the disclosure, the number of thermal column is unlimited in radiating bottom plate, can be one or more, further, in order to
Heat dissipation effect is improved, radiating bottom plate may include multiple thermal columns, and multiple thermal columns can with parallel interval be welded in aluminium carbonization
On silicon plate.The number and distribution form of thermal column are not particularly limited, and can require to carry out according to heat dissipation area and product weight
Selection, for example, the number of thermal column can be 150~1500, preferably 300~1100；In multiple thermal columns, adjacent two
The distance of a thermal column can be 2.5~15mm, preferably 3.5~10mm, wherein the distance of two neighboring thermal column refers to column
In the heart away from the spacing of that is, two neighboring thermal column bottom center.The shape of multiple thermal columns can be identical or different, preferably identical
To prepare.
According to the disclosure, aluminium silicon carbide plate (AlSiC plate) can be well-known to those skilled in the art, i.e., aluminium and silicon carbide are multiple
Close the composite material formed.
According to the disclosure, in order to improve the weld strength between thermal column and aluminium silicon carbide plate, in a kind of tool of the disclosure
In body embodiment, radiating bottom plate may include the solder layer being set between thermal column and the first main surface.The thickness of solder layer
Degree can change in a big way, and for example, 20~150 μm.Solder layer can contain solder, and solder varieties can be ability
Domain routine, it is preferable that solder may include lead-based solder and/or lead-free solder, and preferably lead-free solder is in favor of environmental protection；Lead
Parent metal may include PbSn and/or PbSnAg, and lead-free solder may include SnAg, SnSb, SnAgCu, Sn-Ag-Bi, Sn-
At least one of Ag-Bi-Cu, Sn-Ag-Bi-Cu-Ge and Sn-Cu-Ni.
According to the disclosure, in order to protect radiating bottom plate, prevent from corroding, at least partly surface of aluminium silicon carbide plate in the disclosure
Matcoveredn can be covered, it is preferable that the surface of aluminium silicon carbide plate may include positioned at the thermal column welding section of the first main surface
With the non-thermal column welding section other than welding section, protective layer, thermal column welding can be coated at least non-thermal column welding section
Matcoveredn can be coated or not coated in area；Wherein, in the case where coating matcoveredn on thermal column welding section, such as Fig. 2
Shown, thermal column 4 can be welded on the protective layer of thermal column welding section；The feelings of matcoveredn are not coated in thermal column welding section
Under condition, thermal column is directly welded in the first main surface.Wherein, protective layer can be the first metal nickel layer 51, the first metallic nickel
Layer can be nickel coating.
Further, the thickness of the first metal nickel layer can be 4~20 μm, preferably 5~15 μm.With above-mentioned preferred
The protective layer of thickness range can either have suitable mechanical performance and weldability to aluminium silicon carbide plate effective protection anti-corrosion
Energy.
Further, in order to protect thermal column, prevent from corroding, in a kind of specific embodiment of the disclosure, thermal column
Surface may include non-solder face other than welding surface and welding surface, at least can be coated with the second metallic nickel on non-solder face
Layer；It can be coated on welding surface or not be coated with the second metal nickel layer, the case where being coated with the second metal nickel layer on welding surface
Under, there can also be the second metal nickel layer between thermal column welding section and the welding surface of thermal column, not be coated with in welding surface
In the case where two metal nickel layers, thermal column welding section can be directly welded to connect with welding surface.In other words, the second metal nickel layer can
To wrap up all surface of thermal column, there is the second metal nickel layer at this time between thermal column and thermal column welding section；Another feelings
Under condition, non-solder face of the surface of thermal column in addition to welding surface is covered with the second metal nickel layer, and the welding surface of thermal column is exposed,
The exposed welding surface is directly welded with thermal column welding section after welding, has the implementation of solder layer in the radiating bottom plate of the disclosure
In mode, the exposed welding surface can directly with solder contact and weld, since the wetability of copper-bearing materials and solder is more preferable,
Solder bond is more preferable, can further increase the binding force of thermal column Yu aluminium silicon carbide plate.Wherein, the welding surface of thermal column refers to
The surface that thermal column contacts when welding with aluminium silicon carbide plate.
Wherein, the thickness of the second metal nickel layer can be 2~20 μm, preferably 5~15 μm.With above-mentioned preferred thickness
Second metal nickel layer of range can either have suitable mechanical performance and welding performance to thermal column effective protection anti-corrosion.
In another specific embodiment of the disclosure, radiating bottom plate can also include third metal nickel layer, third gold
Category nickel layer can wrap up all surface of radiating bottom plate.Thermal column can cover or not be covered with the second metal nickel layer at this time, excellent
Thermal column is selected not to be covered with the second metal nickel layer, in this embodiment, aluminium silicon carbide plate welds entire scattered after thermal column
Hot bottom plate is coated with third metal nickel layer, nickel plating operation of being more convenient for.
Wherein, the thickness of third metal nickel layer can be 2~20 μm, preferably 5~15 μm.With above-mentioned preferred thickness
The third metal nickel layer of range can not either influence the globality of radiating bottom plate to entire radiating bottom plate effective protection anti-corrosion
Energy.
According to the disclosure, covers what the meaning of copper ceramic substrate was well known to those skilled in the art, that is, use DBC
(Direct Bond Copper) technology is by copper foil direct sintering in a kind of manufactured basic electronic material of ceramic surface.DBC
It is more preferable than traditional DBA current-carrying capability, also more preferable, and DBC etching line is matched with the heat dissipation of aluminium silicon carbide plate and cupric thermal column
Road is more more accurate than being integrally formed DBA；Traditional integrated molding DBA heat-shock may cause ceramic insulation dash-board injury, influence
Performance, and the heat dissipation element of the disclosure can be damaged using DBC to avoid ceramic isolation plate, improve the stability of element.
Further, to cover copper ceramic substrate may include ceramic isolation plate, and ceramic isolation plate, which can have, to be oppositely arranged
First surface and second surface can be respectively equipped with the first layers of copper and the second layers of copper in first surface and second surface, this first
Layers of copper can be welded in the second main surface of aluminium silicon carbide plate.
According to the disclosure, the thickness of the first layers of copper and the second layers of copper can change in a big way, the first layers of copper and
The thickness of two layers of copper can be equal or different, preferably etc., it is preferable that the ratio between thickness of the first layers of copper and the second layers of copper can be
(0.3~1.2): 1, preferably (0.5~0.9): 1, the thickness of the second layers of copper can be 0.1~0.5mm.
According to the disclosure, ceramic isolation plate can be this field conventional kind, preferably alumina plate, nitridation aluminium sheet and nitrogen
At least one of SiClx plate.
The heat dissipation element of the disclosure can be prepared by a method comprising the following steps:
1, pressure casting seeps forming AlSiC plate: use gas pressure infiltration warehouse equipment, by SiC matrix it is die-filling be preheated to 500~
700 DEG C, aluminium is successively poured, (removal gas, prevent product from generating stomata) is vacuumized, is filled with nitrogen pressurization (4~10MPa, promotion
Molten aluminum uniformly fills mold) and it is cooling after obtain AlSiC plate；
2, by AlSiC plate surface nickel plating；
3, thermal column surface clean: using metallic copper thermal column, is cleaned by ultrasonic through washing oil powder solution, then clear water ultrasound is clear
It washes, dries；
4, weld: the guide plate, solder, AlSiC plate (the first main surface towards solder) for being loaded into copper thermal column successively fill
It is folded, briquetting is finally covered, the soldering furnace being put under inert atmosphere is preheated to 150~270 DEG C, welds at 270~450 DEG C.
5, copper ceramic substrate (Al will be covered2O3DBC it) is welded in the second main surface of radiating bottom plate, obtains heat dissipation element.
The preferred embodiment of the disclosure is described in detail in conjunction with attached drawing above, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection scope of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the disclosure to it is various can
No further explanation will be given for the combination of energy.
In addition, any combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as disclosure disclosure of that.
Claims (9)
1. a kind of heat dissipation element, which is characterized in that the heat dissipation element includes radiating bottom plate and covers copper ceramic substrate；The heat dissipation bottom
Plate includes aluminium silicon carbide plate and thermal column, and the aluminium silicon carbide plate has the first main surface and the second main surface being oppositely arranged,
The thermal column is welded in first main surface；The thermal column is metallic copper thermal column or copper alloy thermal column；It is described to cover
Copper ceramic substrate is snugly welded in second main surface.
2. heat dissipation element according to claim 1, which is characterized in that the thermal column is formed as cylindrical body or round estrade,
The axial direction of the thermal column is vertical with the first main surface of the aluminium silicon carbide plate, and one end of the thermal column and described first
Main surface welding, the other end are free end.
3. heat dissipation element according to claim 2, which is characterized in that the diameter of the thermal column is 1~6mm, axially height
Degree is 3~10mm, and the draft angle of the thermal column is 0 °~5 °.
4. heat dissipation element according to claim 1, which is characterized in that the radiating bottom plate includes multiple thermal columns, more
It is welded in first main surface to a thermal column parallel interval.
5. heat dissipation element according to claim 4, which is characterized in that the distance of the two neighboring thermal column be 2.5~
15mm。
6. heat dissipation element according to claim 1, which is characterized in that the radiating bottom plate includes being set to the thermal column
With the solder layer between first main surface.
7. heat dissipation element according to claim 6, which is characterized in that the solder layer includes lead-based solder layer and/or nothing
Lead solder layer.
8. heat dissipation element according to claim 1, which is characterized in that the copper ceramic substrate that covers includes ceramic isolation plate,
The ceramic isolation plate has the first surface and second surface being oppositely arranged, the first surface of the ceramic isolation plate and second
Surface is respectively equipped with different the first layers of copper and the second layers of copper of thickness, and first layers of copper is snugly welded in the described second main table
Face.
9. a kind of IGBT mould group, which is characterized in that the IGBT mould group includes any one in IGBT circuit board and claim 1~8
Heat dissipation element described in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820957277.7U CN208767287U (en) | 2018-06-20 | 2018-06-20 | Heat dissipation element and IGBT mould group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820957277.7U CN208767287U (en) | 2018-06-20 | 2018-06-20 | Heat dissipation element and IGBT mould group |
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| Publication Number | Publication Date |
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| CN208767287U true CN208767287U (en) | 2019-04-19 |
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| CN201820957277.7U Active CN208767287U (en) | 2018-06-20 | 2018-06-20 | Heat dissipation element and IGBT mould group |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993573A (en) * | 2019-11-15 | 2020-04-10 | 西安中车永电电气有限公司 | Novel heat dissipation bottom plate and use method thereof |
| CN112151480A (en) * | 2019-06-28 | 2020-12-29 | 比亚迪股份有限公司 | Copper heat dissipation bottom plate, preparation method thereof and IGBT module |
-
2018
- 2018-06-20 CN CN201820957277.7U patent/CN208767287U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112151480A (en) * | 2019-06-28 | 2020-12-29 | 比亚迪股份有限公司 | Copper heat dissipation bottom plate, preparation method thereof and IGBT module |
| CN110993573A (en) * | 2019-11-15 | 2020-04-10 | 西安中车永电电气有限公司 | Novel heat dissipation bottom plate and use method thereof |
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