CN216391523U

CN216391523U - Heat radiation substrate

Info

Publication number: CN216391523U
Application number: CN202123049914.1U
Authority: CN
Inventors: 林伟健
Original assignee: Fengpeng Electronics Zhuhai Co ltd
Current assignee: Fengpeng Electronics Zhuhai Co ltd
Priority date: 2021-12-07
Filing date: 2021-12-07
Publication date: 2022-04-26
Anticipated expiration: 2031-12-07

Abstract

The embodiment of the utility model discloses a heat dissipation substrate, which comprises a metal bottom plate, a ceramic plate and a circuit layer, wherein the metal bottom plate is provided with a plurality of through holes; the circuit layer is connected with the first surface of the ceramic plate, and the metal bottom plate is connected with the second surface of the ceramic plate; the circuit layer includes the first circuit layer of being connected with the ceramic plate and welds the second circuit layer on first circuit layer, and the thickness on second circuit layer is greater than the thickness on first circuit layer. According to the utility model, the second circuit layer is welded on the first circuit layer, so that the stress between the circuit layer and the ceramic plate interface is effectively reduced, and the thickness and the current carrying capacity of the circuit layer can be increased.

Description

Heat radiation substrate

Technical Field

The present invention relates to a heat-dissipating substrate; and more particularly, to a ceramic heat-dissipating substrate.

Background

The ceramic heat dissipation substrate is manufactured by performing metallization on the surface of the ceramic plate, and has excellent electrical insulation and heat conduction performance. In the prior art, a sintering or direct brazing process is generally adopted to manufacture a circuit layer on a ceramic plate.

For example, chinese patent document CN101414654A discloses a manufacturing process of a high-power LED ceramic heat dissipation substrate, which includes the following steps: (1) forming a uniform and compact oxide film on the surface of the copper powder, uniformly mixing the oxide film with an organic carrier according to the solid phase mass ratio of 70-80: 20-30, and rolling into slurry; (2) printing or coating the slurry on a ceramic substrate to form a metal conductor film, and drying the metal conductor film; (3) and (3) sintering: the sintering peak temperature is 1060-1080 ℃.

In the ceramic heat dissipation substrate prepared by the prior art disclosed in the above patent document, since the difference between the thermal expansion coefficients of the ceramic and the metal is large, when the thickness of the wiring layer is large, a large interfacial stress is generated at the interface between the metal wiring layer and the ceramic board during a cooling-heating cycle, resulting in the generation of cracks.

Disclosure of Invention

The utility model mainly aims to provide a ceramic heat dissipation substrate capable of effectively reducing the interface stress of a circuit layer and a ceramic plate.

In order to achieve the above main object, the present invention discloses a heat dissipation substrate, including a metal base plate, a ceramic plate, and a wiring layer, wherein the wiring layer is connected to a first surface of the ceramic plate, and the metal base plate is connected to a second surface of the ceramic plate; wherein, the circuit layer includes the first circuit layer of being connected with the ceramic plate and welds the second circuit layer on first circuit layer, and the thickness on second circuit layer is greater than the thickness on first circuit layer.

According to an embodiment of the utility model, the thickness of the second wiring layer is 1mm to 6mm, preferably 2mm to 5 mm.

According to an embodiment of the utility model, the thickness of the first line layer is 10 μm to 100 μm, preferably 10 μm to 50 μm.

According to an embodiment of the utility model, the second circuit layer is soldered to the first circuit layer by means of a tin alloy solder.

According to one embodiment of the utility model, each metal base plate is connected to a plurality of ceramic plates.

According to one embodiment of the utility model, each ceramic plate is connected to a plurality of metal base plates.

According to one embodiment of the utility model, the ceramic plate is a silicon nitride, aluminum nitride or aluminum oxide ceramic plate.

According to an embodiment of the utility model, the metal base plate is a copper plate.

According to an embodiment of the present invention, the first wiring layer includes a non-copper metal wiring layer and a copper wiring layer sequentially connected on the ceramic board.

According to an embodiment of the present invention, the second surface of the ceramic plate is sequentially connected with a non-copper metal connection layer and a copper metal connection layer, and the metal base plate is welded to the copper metal connection layer.

The utility model has the following beneficial effects:

firstly, the second circuit layer with larger thickness is welded on the first circuit layer through the welding material, and the welding material can buffer the thermal stress generated by the second circuit layer in the process of cold and hot circulation, so that the stress at the interface of the circuit layer and the ceramic plate is reduced, and the defect that the product has cracks is avoided or remarkably reduced.

Secondly, every metal substrate is connected with polylith ceramic plate, or every ceramic plate is connected with polylith metal substrate, is about to metal substrate or ceramic plate setting by parts, can further reduce the possibility that the product crackle appears.

To more clearly illustrate the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the accompanying drawings and detailed description.

Drawings

Fig. 1 is a schematic structural view of a heat dissipation substrate in embodiment 1;

fig. 2 is a schematic structural view of a heat dissipation substrate in embodiment 2;

fig. 3 is a schematic structural view of a heat dissipation substrate in embodiment 3.

It should be noted that, in order to clearly illustrate the structures that are being represented, the various parts of the drawings may not be drawn to the same scale. Therefore, unless explicitly stated otherwise, the drawings do not limit the dimensions and proportional relationships of the heat dissipation substrate.

Detailed Description

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced with other variations that are based on the description. Therefore, other possible implementations that can be recognized by those skilled in the art based on the following examples are within the scope of the present invention.

Example 1

As shown in fig. 1, the heat dissipating substrate of example 1, a metal base plate 1, a ceramic plate 2, and a wiring layer 3; wherein the wiring layer 3 is connected to a first surface of the ceramic board 2 and the metal base plate 1 is connected to a second surface of the ceramic board 2.

In the present invention, the metal base plate 1 may be a copper plate, an aluminum plate or an aluminum-copper composite plate, and the thickness thereof may not be limited. In some embodiments, a fluid channel may be formed in the metal base plate 1, and when in use, a heat-conducting fluid is introduced into the metal base plate 1 to promote heat dissipation; in other embodiments, a non-planar structure such as a heat sink fin can be formed on the metal base plate 1 to increase the heat dissipation area. Further, the metal base plate 1 may also form the flow channel and the heat dissipation fins at the same time.

In the present invention, the ceramic plate 2 may be a silicon nitride, aluminum nitride or aluminum oxide ceramic plate, and an aluminum nitride ceramic plate is preferably used. Further, the thickness of the ceramic plate 2 may be 0.25mm to 2.0mm, but the present invention is not limited thereto.

The second surface of the ceramic plate 2 is provided with a metal connecting layer 21, the metal connecting layer 21 can comprise a non-copper metal connecting layer and a copper metal connecting layer which are sequentially connected to the second surface of the ceramic plate 2, and the metal bottom plate 1 is connected with the copper metal connecting layer in a welding manner; wherein, the non-copper metal connecting layer can be a Ti, Zr, Hf and/or Cr metal layer.

The wiring layer 3 includes a first wiring layer 31 connected to the ceramic board 2 and a second wiring layer 32 soldered on the first wiring layer 31, and the thickness of the second wiring layer 32 is larger than that of the first wiring layer 31, and both may form an identical pattern. Wherein the thickness of the first line layer may be 10 μm to 100 μm, preferably 10 μm to 50 μm, for example, about 35 μm; the thickness of the second wiring layer 32 may be 1mm to 6mm, preferably 2mm to 5 mm.

In the present invention, the first wiring layer 31 may include a non-copper metal wiring layer and a copper wiring layer, which are sequentially connected on the ceramic plate 2, and the non-copper metal wiring layer may be a Ti, Zr, Hf and/or Cr wiring layer. In the present invention, the second circuit layer 32 may be manufactured by performing mechanical cutting, laser cutting, die cutting, and the like on a copper plate having a corresponding thickness.

In the present invention, the second circuit layer 32 may be soldered to the first circuit layer 31 by a solder material 33 such as a tin alloy solder, and the thickness of the solder material 33 may be 0.2mm to 0.5 mm.

Further, as shown in fig. 1, the heat dissipation substrate further includes a circuit packaging material 4 manufactured by resin injection molding or a circuit board lamination process, the device bonding sites of the circuit layer 3 are exposed from the circuit packaging material 4, and the device bonding sites may be flush with or not flush with the surface of the circuit packaging material 4.

In embodiment 1, the second circuit layer 32 with a larger thickness is welded on the first circuit layer 31 through the welding material 33, and the welding material 33 can buffer the thermal stress generated by the second circuit layer 32 during the cooling and heating cycle, so as to reduce the stress at the interface between the circuit layer 3 and the ceramic plate 2, thereby avoiding or significantly reducing the defect of product cracks.

Example 2

As shown in fig. 2, in embodiment 2, a metal base plate 1 is connected to a plurality of ceramic plates 2. Wherein, the metal base plate 1 can be a copper plate, an aluminum plate or an aluminum-copper composite plate, and the ceramic plate 2 can be a silicon nitride, aluminum nitride or aluminum oxide ceramic plate.

The wiring layer 3 includes a first wiring layer 31 connected to the ceramic board 2 and a second wiring layer 32 welded on the first wiring layer 31 via a welding material 33, and the thickness of the second wiring layer 32 is larger than that of the first wiring layer 31. Specifically, the thickness of the first wire layer may be 10 to 100 μm, the thickness of the second wire layer may be 1 to 6mm, and the thickness of the solder material 33 may be 0.2 to 0.5 mm.

In example 2, each metal base plate 1 is connected to a plurality of ceramic plates 2, i.e., the ceramic plates 2 are arranged in blocks, so that the possibility of cracks in the product can be further reduced.

Example 3

As shown in fig. 3, in embodiment 3, a ceramic plate 2 is attached to a plurality of metal base plates 1. Wherein, the metal base plate 1 can be a copper plate, an aluminum plate or an aluminum-copper composite plate, and the ceramic plate 2 can be a silicon nitride, aluminum nitride or aluminum oxide ceramic plate.

The wiring layer 3 includes a first wiring layer 31 connected to the ceramic board 2 and a second wiring layer 33 welded on the first wiring layer 31 via a welding material 33, and the thickness of the second wiring layer 32 is larger than that of the first wiring layer 31. Specifically, the thickness of the first wire layer may be 10 to 100 μm, the thickness of the second wire layer may be 1 to 6mm, and the thickness of the solder material 33 may be 0.2 to 0.5 mm.

In embodiment 3, each ceramic plate 2 is connected to a plurality of metal base plates 1, that is, the metal base plates 1 are arranged in blocks, so that the possibility of cracks in the product can be further reduced, and particularly, the cracks between the metal base plates 1 and the ceramic plates 2 can be avoided or reduced.

In other embodiments of the present invention, the heat dissipation substrate may further include a third circuit layer disposed on the surface and/or inside of the circuit packaging material, and the third circuit layer may be a thin copper circuit.

In summary, the second circuit layer is welded on the first circuit layer, so that the stress between the circuit layer and the ceramic plate interface is effectively reduced, and the circuit layer with a larger thickness can be manufactured, thereby further increasing the current carrying capacity of the ceramic heat dissipation substrate.

Although the present invention has been described above by way of examples, it should be understood that the above examples are merely illustrative of possible embodiments of the present invention and should not be construed as limiting the scope of the present invention, and that equivalent variations made by those skilled in the art in light of the present invention are intended to be covered by the scope of the appended claims.

Claims

1. A heat dissipation substrate comprises a metal bottom plate, a ceramic plate and a circuit layer, wherein the circuit layer is connected with a first surface of the ceramic plate, and the metal bottom plate is connected with a second surface of the ceramic plate; the method is characterized in that: the circuit layer include with the first circuit layer that the ceramic plate is connected with weld the second circuit layer on the first circuit layer, the thickness on second circuit layer is greater than the thickness on first circuit layer.

2. The heat dissipating substrate according to claim 1, wherein: the thickness of the second circuit layer is 1 mm-6 mm.

3. The heat dissipating substrate according to claim 1, wherein: the thickness of the first circuit layer is 10-100 mu m.

4. The heat dissipating substrate according to claim 1, wherein: the second circuit layer is welded on the first circuit layer through tin alloy welding flux.

5. The heat dissipating substrate according to claim 1, wherein: each of the metal base plates is connected to a plurality of the ceramic plates.

6. The heat dissipating substrate according to claim 1, wherein: each of the ceramic plates is connected to a plurality of the metal base plates.

7. The heat dissipating substrate according to claim 1, wherein: the ceramic plate is a silicon nitride, aluminum nitride or aluminum oxide ceramic plate.

8. The heat dissipating substrate according to claim 1, wherein: the metal bottom plate is a copper plate.

9. The heat dissipating substrate according to claim 1, wherein: the first circuit layer comprises a non-copper metal circuit layer and a copper circuit layer which are sequentially connected to the ceramic plate.

10. The heat dissipating substrate according to claim 1, wherein: the second surface of the ceramic plate is sequentially connected with a non-copper metal connecting layer and a copper metal connecting layer, and the metal bottom plate is connected with the copper metal connecting layer in a welding mode.