CN111843165A - Diffusion connection method for diamond micro-channel - Google Patents
Diffusion connection method for diamond micro-channel Download PDFInfo
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- CN111843165A CN111843165A CN202010796192.7A CN202010796192A CN111843165A CN 111843165 A CN111843165 A CN 111843165A CN 202010796192 A CN202010796192 A CN 202010796192A CN 111843165 A CN111843165 A CN 111843165A
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- diamond
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- diamond shell
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/26—Auxiliary equipment
Abstract
The invention discloses a diffusion connection method of a diamond micro-channel, which comprises the following steps: step S1: processing the intermediate layer into a shape matched with the welding surface; cleaning the first diamond shell, the second diamond shell and the middle layer, and drying; placing the middle layer on the welding surface of the first diamond shell, placing the second diamond shell on the middle layer, and compacting by a fixture; and sintering the assembled piece to be welded by discharge plasma under the conditions of vacuum and the temperature of less than 750 ℃. The invention has the beneficial effects that: the active metal element Ti reacts with the diamond to generate carbide TiC so as to realize metallurgical bonding between the diamond and the intermediate layer; the rapid formation of a welding interface is realized through the effective combination of the low-melting-point intermediate layer and the surface activation of the spark plasma sintering; stress is relieved by virtue of good plasticity of the middle layer; the welding precision of the diamond micro-channel is high, and the air tightness of the connecting joint is good.
Description
Technical Field
The invention relates to a method for hermetically sealing a micro-channel of a high-power electronic device and equipment, in particular to a method for connecting a diamond micro-channel.
Background
With the development of high power, high integration and high frequency of electronic devices, the heat generation amount per unit volume of electronic devices is larger and larger, and the performance, reliability and service life of the devices are seriously affected by the problems of over-high temperature, thermal stress and the like, so that the heat dissipation problem becomes the bottleneck of the development and application of high power devices. The heat dissipation capability of electronic devices depends on peripheral heat dissipation materials to a great extent, while the traditional heat conduction materials (aluminum, copper and the like) are limited by self heat conductivity and weight, so that the development requirements of new generation electronic equipment in China cannot be met, and the development and application of a new generation of heat sink materials with low density and higher heat dissipation capability are urgent.
Diamond, which is commonly referred to as diamond, is the hardest naturally occurring substance and is widely used in industry as a cutting tool. Meanwhile, diamond is a substance with the highest thermal conductivity in the nature, has the characteristics of high optical transmission capacity, low expansion coefficient, low density and the like, and is one of hot raw materials for packaging high-power electronic devices. Through the micro-channel design of the diamond, the surface area is increased and improved by utilizing the aspect ratio channel, the convection heat transfer coefficient between the diamond substrate and the heat dissipation working medium is improved, and the micro-channel design has an important effect on improving the heat dissipation effect. At present, the diamond runner type heat radiator is considered as an ideal cooling device for electronic devices in the field of aerospace.
The diamond heat sink generally comprises three parts, namely an upper diamond shell, a lower diamond shell, an internal flow channel and a working fluid. The heat from the heat source device is firstly transferred to the upper surface of the diamond radiator, then transferred to the lower surface of the radiating plate through solid heat conduction, and after being transferred to flowing working fluid through convection heat exchange of solid and liquid, the heat is rapidly transported to a part far away from the heat source device, so as to achieve the temperature control of the heat source device. In the preparation of the diamond micro-channel heat dissipation device, a laser processing method is generally adopted to prepare the micro-channel in the diamond shell, and then the shell is connected with the cover plate in a welding mode, so that the diamond heat dissipation device is finally formed. Therefore, how to realize the highly reliable connection of the diamond micro-channel is one of the core problems for realizing the engineering application.
At present, the diamond connection mainly adopts a brazing and diffusion welding method. In the case of brazed joints, the joining process is as follows: 202010324599.X, bonding the diamond micro flow channel film 600 and the second Si substrate at room temperature and under a pressure ranging from 1MPa to 2 MPa. Because the diamond and the metal have different chemical bonds, the diamond and the metal have higher interfacial energy, and the conventional metal is generally difficult to form chemical bonding with the diamond; when the weldability is improved by adopting the active brazing filler metal through reaction wetting, the problems of poor precision control, flowing brazing filler metal and blocking a flow channel and the like exist. During diffusion welding connection, the high stability of the diamond enables the diffusion rate to be slow and the time consumption to be long; meanwhile, diamond is a high-hardness and brittle material, the surface treatment difficulty is high, the precise matching of a welding surface is difficult to realize, and the application of high pressure easily causes the damage of a diamond micro-channel. In addition, the diamond connection temperature in a vacuum environment is not limited by the graphitization transition temperature of the diamond and is not required to exceed 850 ℃. Thus, soldering of diamond micro-channel heat sinks presents significant challenges.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to solve the problem that the welding mode of diamond micro-channel in the prior art leads to the welding nature of welded joint department bad, welding speed is slow.
The invention solves the technical problems through the following technical means:
a diffusion connection method of a diamond micro-channel comprises the following steps:
step S1: processing a first diamond shell and a second diamond shell, processing a micro-channel in the first diamond shell or/and the second diamond shell, and reserving welding surfaces on the first diamond shell and the second diamond shell;
step S2: processing the intermediate layer made of the AgCuTi material into a shape matched with the welding surface;
step S3: cleaning the first diamond shell, the second diamond shell and the middle layer, and drying;
step S4: placing the middle layer on the welding surface of the first diamond shell, placing the second diamond shell on the middle layer, and compacting by a fixture;
step S5: and sintering the assembled piece to be welded by discharge plasma under the conditions of vacuum and the temperature of less than 750 ℃.
The invention utilizes the reaction of active metal element Ti and diamond to generate carbide TiC to realize the metallurgical bonding of the diamond and the intermediate layer; the rapid formation of a welding interface is realized through the effective combination of the low-melting-point intermediate layer and the surface activation effect of the spark plasma sintering; the stress is relieved by utilizing the good plasticity of the middle layer through the middle layer; meanwhile, as the intermediate layer is not melted, the method can improve the welding precision of the diamond micro-channel and avoid the problems of channel blockage caused by brazing filler metal and the like; the connecting joint obtained by the method has good air tightness and tensile strength of 150 MPa.
Preferably, in step S1, the first diamond housing is a concave structure, the second diamond housing is a flat plate structure, the top surface of the concave structure is a welding surface, the invagination of the concave structure is a microchannel, the concave structure is welded to the flat plate structure to form a square structure, and the flat plate structure has a coolant inlet and a coolant outlet.
According to actual needs and processing conditions, the structure can be formed by butting two concave structures, and can also be formed by butting one concave structure and one flat plate structure.
Preferably, in step S1, the micro flow channel is processed by laser.
Preferably, in step S1, the weld surface roughness is no greater than ra 1.6.
Preferably, in the step S2, the intermediate layer is an AgCuTi foil, and the AgCuTi foil is made of AgCu28 eutectic solder and 1-7 wt.% Ti. The AgCu28 eutectic solder is combined with Ti in a smelting mode, does not contain volatile elements, and is suitable for welding in a protective atmosphere furnace or in vacuum.
Preferably, in step S2, the thickness of the intermediate layer is 50 to 150 μm.
Preferably, in step S3, the first diamond shell, the second diamond shell and the intermediate layer are placed in an acetone solution for ultrasonic cleaning for 8-15 min.
The purpose of cleaning is to remove oil and dirt, and cleaning can also be performed by soaking in an alcohol solution.
Preferably, the clamp in the step S4 includes an upper press head, a lower press head, and a sleeve, where the sleeve is a hollow structure, the sleeve is sleeved on the outside of the whole to-be-welded part, the upper press head is located at the top of the second diamond shell, and the lower press head is located at the bottom of the first diamond shell.
Preferably, in step S5, the assembled to-be-welded part is placed in a spark plasma sintering furnace, and diffusion sintering connection is performed in a spark plasma sintering mode.
Preferably, the degree of vacuum in the spark plasma sintering furnace is at least 10-4Pa, heating to 500-550 ℃ at the speed of 50-150 ℃/min, preserving heat for 5-10min, applying pressure of 2-5MPa, and then cooling to room temperature at the speed of 30-50 ℃/min to finish welding.
The discharge plasma is used for sintering, the heating is uniform, the temperature rising speed is high, the sintering temperature is low, the sintering time is short, the production efficiency is high, the product tissue is fine and uniform, the natural state of raw materials can be maintained, high-density materials can be obtained, and gradient materials and complex workpieces can be sintered. The discharge plasma sintering furnace is simple to operate.
The invention has the advantages that:
(1) according to the invention, the carbide TiC generated by the reaction of the active metal element Ti and the diamond is distributed in the connecting layer, the metallurgical bonding between the diamond and the middle layer is realized, and the joint is well connected, complete and compact; the rapid formation of a welding interface is realized through the effective combination of the low-melting-point intermediate layer and the surface activation effect of the spark plasma sintering; stress is relieved by virtue of good plasticity of the middle layer; meanwhile, because the intermediate layer is not melted, the method can improve the welding precision of the diamond micro-channel and avoid the problems of channel blockage caused by brazing filler metal and the like; the connecting joint obtained by the method has good air tightness and tensile strength of 150 MPa;
(2) according to actual needs and processing conditions, the structure can be formed by butting two concave structures, or can be formed by butting one concave structure and one flat plate structure;
(3) the AgCu28 eutectic solder is combined with Ti in a smelting mode, the solder does not contain volatile elements, and the brazing filler metal is suitable for welding in a protective atmosphere furnace or in vacuum;
(4) the cleaning aims at removing oil and dirt, and can be carried out by soaking in an alcohol solution;
(5) the discharge plasma is used for sintering, the heating is uniform, the temperature rising speed is high, the sintering temperature is low, the sintering time is short, the production efficiency is high, the product tissue is fine and uniform, the natural state of raw materials can be maintained, high-density materials can be obtained, and gradient materials and complex workpieces can be sintered. The discharge plasma sintering furnace is simple to operate.
Drawings
FIG. 1 is a schematic diagram of a diamond shell according to an embodiment of the invention;
FIG. 2 is a schematic view of a diamond shell clamped in a fixture according to an embodiment of the invention;
FIG. 3 is a schematic view showing the diamond shell clamped in the clamping apparatus according to the second embodiment;
FIG. 4 is an electron microscope image of the diamond and AgCuTi interface;
reference numbers in the figures: 1. a first diamond shell; 2. a second diamond housing; 21. a coolant inlet; 22. a coolant outlet; 3. an intermediate layer; 4. a fixture; 41. an upper pressure head; 42. a lower pressure head; 43. a sleeve;
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1 and 2, a diamond housing includes a first diamond housing 1, a second diamond housing 2, and an intermediate layer 3, in this embodiment, the first diamond housing 1 is a concave structure, the second diamond housing 2 is a flat plate structure, a top surface of the concave structure is a welding surface, an invagination of the concave structure is a microchannel, the concave structure, the intermediate layer 3, and the flat plate structure are welded to form a square structure, and the flat plate structure has a cooling liquid inlet 21 and a cooling liquid outlet 22;
a diffusion connection method of a diamond micro-channel comprises the following steps:
step S1: processing the first diamond shell 1 and the second diamond shell 2 to enable the first diamond shell 1 and the second diamond shell 2 to be matched, processing micro channels in the first diamond shell 1 through laser, reserving welding surfaces on the first diamond shell 1 and the second diamond shell 2, and enabling the roughness of the welding surfaces to be below Ra1.6;
step S2: processing the intermediate layer 3 made of AgCuTi into a shape matched with the welding surface; the middle layer 3 is an AgCuTi foil, the AgCuTi foil is prepared by AgCu28 eutectic solder and 1-7 wt.% of Ti in a smelting mode, and the solder does not contain volatile elements and is suitable for welding in a protective atmosphere furnace or in vacuum; the thickness of the intermediate layer is 50-150 μm.
Step S3: putting the first diamond shell 1, the second diamond shell 2 and the middle layer 3 into an acetone solution, ultrasonically cleaning for 10min, and drying; the purpose of cleaning is to remove oil and dirt;
step S4: as shown in fig. 2, an intermediate layer 3 and a second diamond shell 2 are sequentially assembled on the welding surface of the first diamond shell 1 and compacted by a fixture 4 matched with the intermediate layer and the second diamond shell; the fixture 4 comprises an upper pressure head 41, a lower pressure head 42 and a sleeve 43, wherein the upper pressure head 41 is positioned at the top of the second diamond shell 2, the lower pressure head 42 is positioned at the bottom of the first diamond 1 shell, and the sleeve 43 is respectively positioned outside the whole piece to be welded; whole fixture 4 is made for the graphite material, and the shape of going up pressure head 41, pressure head 42 and the opening at sleeve 43 both ends form and suit, guarantee that whole treating can be compressed tightly all around of weldment.
Step S5: placing the assembled to-be-welded part in a discharge plasma sintering furnace, and performing diffusion sintering connection by adopting a discharge plasma sintering mode; the vacuum degree in the discharge plasma sintering furnace is at least 10-4Pa, heating to 550 ℃ at the speed of 50 ℃/min, keeping the temperature for 5min, applying pressure of 2MPa, and then cooling to room temperature at the speed of 30 ℃/min to finish welding.
The discharge plasma is used for sintering, the heating is uniform, the temperature rising speed is high, the sintering temperature is low, the sintering time is short, the production efficiency is high, the product tissue is fine and uniform, the natural state of raw materials can be maintained, high-density materials can be obtained, and gradient materials and complex workpieces can be sintered. The discharge plasma sintering furnace is simple to operate.
In the embodiment, the active metal element Ti reacts with the diamond to generate carbide TiC so as to realize metallurgical bonding between the diamond and the intermediate layer; the rapid formation of a welding interface is realized through the effective combination of the low-melting-point intermediate layer and the surface activation of the spark plasma sintering; the stress is relieved by utilizing the good plasticity of the middle layer through the middle layer; meanwhile, the melting point of the AgCu28 eutectic solder is 779 ℃, so that the middle layer is not melted in the sintering process, the method can improve the welding precision of the diamond micro-channel and avoid the problems that the solder blocks the channel and the like; the connecting joint obtained by the method has good air tightness and tensile strength of 150 MPa.
Example two:
as shown in fig. 3, the present embodiment is different from the first embodiment in that: the first diamond shell 1 and the second diamond shell 2 have different structures;
in this embodiment, the first diamond housing 1 and the second diamond housing 2 are both concave structures, the two concave structures are butted to form a micro channel inside, and the first diamond housing 1 or the second diamond housing 2 is provided with a cooling liquid inlet 21 and a cooling liquid outlet 22.
The structure in the first embodiment or the second embodiment is selected according to actual needs, processing conditions, and the like.
Example three:
the difference between this embodiment and the first embodiment is: in step S3, the first diamond case 1, the second diamond case 2, and the intermediate layer 3 are immersed in an alcohol solution for 10min, and then washed by immersing in an alcohol solution.
Example four:
the difference between this embodiment and the first embodiment is: step S5 sintering conditions are different:
placing the assembled workpiece to be welded in a discharge plasma sintering furnace, and sintering by adopting a discharge plasma sintering mode; the degree of vacuum in the discharge plasma sintering furnace was 10-4Pa, heating to 520 ℃ at the speed of 100 ℃/min, keeping the temperature for 8min, applying pressure of 3.5MPa, and then cooling to room temperature at the speed of 40 ℃/min to finish welding.
Example five:
the difference between this embodiment and the first embodiment is: step S5 sintering conditions are different:
step S5: placing the assembled workpiece to be welded in a discharge plasma sintering furnace, and sintering by adopting a discharge plasma sintering mode; the degree of vacuum in the discharge plasma sintering furnace was 10-4Pa, heating to 500 ℃ at the speed of 150 ℃/min, keeping the temperature for 10min, applying pressure of 5MPa, and then cooling to room temperature at the speed of 50 ℃/min to finish welding.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A diffusion connection method of a diamond micro-channel is characterized by comprising the following steps:
step S1: processing a first diamond shell and a second diamond shell, processing a micro-channel in the first diamond shell or/and the second diamond shell, and reserving welding surfaces on the first diamond shell and the second diamond shell;
step S2: processing the intermediate layer made of the AgCuTi material into a shape matched with the welding surface;
step S3: cleaning the first diamond shell, the second diamond shell and the middle layer, and drying;
step S4: placing the middle layer on the welding surface of the first diamond shell, placing the second diamond shell on the middle layer, and compacting by a fixture;
step S5: and sintering the assembled piece to be welded by discharge plasma under the conditions of vacuum and the temperature of less than 750 ℃.
2. The method according to claim 1, wherein in step S1, the first diamond case is a concave structure, the second diamond case is a flat structure, the top surface of the concave structure is a bonding surface, the recess of the concave structure is a microchannel, the concave structure and the flat structure are welded to form a square structure, and the flat structure has a coolant inlet and a coolant outlet.
3. The method for diffusion bonding of diamond micro flow channels according to claim 1, wherein in the step S1, the micro flow channels are processed by laser.
4. The diffusion bonding method of diamond micro flow channels according to claim 1, wherein in step S1, the roughness of the bonding surface is below ra 1.6.
5. The diffusion bonding method of diamond micro flow channels as claimed in claim 1, wherein in step S2, the intermediate layer is AgCuTi foil made of AgCu28 eutectic solder and 1-7 wt.% Ti.
6. The diffusion bonding method of diamond micro flow channels as claimed in claim 1, wherein in step S2, the thickness of the intermediate layer is 50-150 μm.
7. The diffusion bonding method of a diamond micro flow channel according to claim 1, wherein in step S3, the first diamond shell, the second diamond shell and the intermediate layer are placed in acetone solution for ultrasonic cleaning for 8-15 min.
8. The method of claim 1, wherein the fixture in step S4 comprises an upper pressing head, a lower pressing head, and a sleeve, wherein the sleeve is hollow, the sleeve is sleeved on the outside of the whole piece to be welded, the upper pressing head is located on the top of the second diamond shell, and the lower pressing head is located on the bottom of the first diamond shell.
9. The method of claim 1, wherein in step S5, the assembled parts to be welded are placed in a spark plasma sintering furnace, and the diffusion sintering connection is performed in a spark plasma sintering mode.
10. The method of claim 9 in which the degree of vacuum in the spark plasma sintering furnace is at least 10-4Pa, heating to 500-550 ℃ at the speed of 50-150 ℃/min, preserving the heat for 5-10min, applying the pressure of 2-5MPa, and then cooling to room temperature at the speed of 30-50 ℃/min to finish welding.
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| CN113267082A (en) * | 2021-04-19 | 2021-08-17 | 北京科技大学 | Preparation method of manifold type all-diamond micro-channel radiator |
| CN114367730A (en) * | 2021-12-16 | 2022-04-19 | 武汉大学 | Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect tensile structure |
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