CN109959289B - Method for preparing anti-gravity ultrathin micro heat pipe - Google Patents
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- CN109959289B CN109959289B CN201910200216.5A CN201910200216A CN109959289B CN 109959289 B CN109959289 B CN 109959289B CN 201910200216 A CN201910200216 A CN 201910200216A CN 109959289 B CN109959289 B CN 109959289B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/0283—Means for filling or sealing heat pipes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D2015/0225—Microheat pipes
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Abstract
The invention discloses an antigravity ultrathin micro heat pipe and a preparation method thereof, wherein the preparation method comprises the steps of carrying out continuous twice laser processing on a monocrystalline silicon piece, processing a groove and a fusiform structure which can carry out array arrangement of unidirectional transportation liquid and is used as a capillary liquid absorption core, then placing a monocrystalline silicon support between two monocrystalline silicon pieces with the fusiform structure, sealing the monocrystalline silicon pieces and the monocrystalline silicon support by adopting an eutectic bonding technology, drilling a vacuum liquid filling hole on one side of the monocrystalline silicon piece by adopting femtosecond laser, vacuumizing the micro heat pipe by a vacuum filling machine, filling working medium liquid, and then carrying out laser welding sealing on the vacuum liquid filling hole to obtain the antigravity ultrathin micro heat pipe. The antigravity ultrathin micro heat pipe adopts a spindle-shaped array liquid absorption core structure which can carry out unidirectional liquid transportation and is directly processed on the inner wall, and has a larger vapor backflow channel; the fusiform array structure brings great capillary reflux pressure, and the heat transfer performance is good, and the gravity resistance is realized.
Description
Technical Field
The invention relates to the technical field of micro heat pipe preparation, in particular to a preparation method of an anti-gravity ultrathin micro heat pipe.
Background
With the rapid development of microelectronic technology and large-scale integrated circuit technology, the heat flux density of high-power electronic chips is greatly increased, and the heat dissipation space of electronic components is very narrow due to large-scale highly integrated circuits. Research data show that the failure rate of the electronic component increases exponentially along with the temperature rise of the electronic component, and when the temperature exceeds the rated working temperature of the electronic component, the reliability of the electronic component is remarkably reduced. Over 55% of electronic device failures are caused by over-temperature due to untimely heat dissipation.
The heat pipe is used as an efficient phase-change heat transfer element, has the advantages of high heat conductivity, high stability, long service life and the like, can quickly transfer heat away, and prevents local hot spots from being generated, so that the heat pipe becomes one of the most widely used heat dissipation components in the field of microelectronics. However, as electronic products are continuously developed toward miniaturization and high integration, the traditional cylindrical heat pipe or flattened pipe cannot meet the requirement of efficient heat dissipation in a narrow space, and is difficult to be applied to compact, light and thin electronic equipment. In addition, the traditional heat pipe can generally conduct heat in two directions, so that for electronic components, when the external temperature is too high, the traditional micro heat pipe can conduct external heat to the electronic components, and the electronic components are damaged due to the fact that the temperature is too high.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a preparation method of an anti-gravity ultrathin micro heat pipe, which can be used for producing the anti-gravity ultrathin micro heat pipe in batches with high precision.
The technical scheme of the invention is as follows: a preparation method of an antigravity ultrathin micro heat pipe comprises the following steps:
(1) cleaning and drying the monocrystalline silicon wafer and the monocrystalline silicon support; the selected monocrystalline silicon wafer is suitable for laser processing and has higher thermal conductivity;
(2) successively and continuously carrying out laser processing twice on a single surface of a monocrystalline silicon piece to process a fusiform structure arranged in an array and a plurality of grooves with rectangular cross sections along the length direction of the monocrystalline silicon piece, and then cleaning and drying the monocrystalline silicon piece;
(3) processing two monocrystalline silicon wafers through the step (2), wherein one surfaces of the two monocrystalline silicon wafers with the fusiform arrays are opposite, a monocrystalline silicon support is placed between the two monocrystalline silicon wafers, the two monocrystalline silicon wafers and the monocrystalline silicon support are sealed through an eutectic bonding technology, and an inner cavity is formed between the monocrystalline silicon wafers and the monocrystalline silicon support;
(4) and laser drilling is carried out on one of the monocrystalline silicon pieces of the micro heat pipe, a vacuum liquid filling hole is processed, the inner cavity is vacuumized through the vacuum liquid filling hole and is filled with working medium liquid, and then the vacuum liquid filling hole is sealed by laser welding, so that the anti-gravity ultrathin micro heat pipe is obtained.
In the step (1), the cleaning is ultrasonic vibration cleaning by deionized water for at least 20 minutes, and the drying is drying the monocrystalline silicon wafer at the temperature of 80-95 ℃ for 10-15 minutes.
In the step (1), the monocrystalline silicon piece is rectangular, two surfaces of the monocrystalline silicon piece are polished in advance, the length of the monocrystalline silicon piece is 100-200 mm, the width of the monocrystalline silicon piece is 30-50 mm, and the thickness of the monocrystalline silicon piece is 0.2-0.25 mm.
In the step (1), the monocrystalline silicon support is of a rectangular frame structure, the length, width and thickness of the monocrystalline silicon support are respectively the same as those of the monocrystalline silicon piece, and the frame width of the monocrystalline silicon support is 8-12 mm.
In the step (2), in the two laser processing processes, a plurality of grooves with rectangular cross sections are processed for the first time along the length direction of the monocrystalline silicon piece, and fusiform structures arranged in an array are processed for the second time; or processing the spindle-shaped structures arranged in an array for the first time, and processing a plurality of grooves with rectangular cross sections along the length direction of the monocrystalline silicon piece for the second time.
In the step (2), the laser processing adopts femtosecond laser processing, the wavelength of the laser is 400 nm-800 nm, the energy of the laser is 80-100 mW, and the cutting speed of the laser is not more than 30 mu m/s.
In the step (3), the eutectic bonding technology is a silicon-silicon direct eutectic bonding technology.
In the step (4), the laser drilling adopts a femtosecond laser drilling technology, the vacuumizing is to pump the pressure in the micro heat pipe cavity to 10-20 pa, and the working medium liquid adopts a refrigerant. Wherein the refrigerant comprises deionized water, ethanol, acetone, tetrafluoroethane and chlorotrifluoropropene.
And (3) simultaneously sealing a plurality of pairs of monocrystalline silicon wafers and monocrystalline silicon supports by using a eutectic bonding technology. A plurality of antigravity ultrathin micro heat pipes can be obtained through one-time bonding process, and the production efficiency is improved.
And (4) in the step (4), a vacuum filling machine is adopted when the inner cavity is vacuumized and the working medium liquid is filled into the inner cavity.
Compared with the prior art, the invention has the following beneficial effects:
the preparation method of the antigravity ultrathin micro heat pipe adopts the spindle-shaped array liquid absorption core structure which can carry out unidirectional liquid transportation and is directly processed on the inner wall, is different from the traditional groove and powder burning liquid absorption core structure, and has a larger vapor backflow channel; meanwhile, the fusiform array wick structure brings great capillary reflux pressure, and has good heat transfer performance and antigravity property.
The preparation method of the antigravity ultrathin micro heat pipe adopts a laser processing technology, has extremely narrow channel width, smooth cutting surface, no heat influence layer in the cutting process, no internal stress generated on the surface of a processing material and high processing precision. The antigravity ultrathin micro heat pipe prepared by the method adopts the full silicon-based material and the close eutectic bonding technology, is different from the micro heat pipe with different materials of the substrate and the liquid absorbing core, has extremely small thermal resistance, has the advantages of compact structure, ultrathin thickness and unidirectional heat transfer, and is a heat dissipation device suitable for narrow heat dissipation space.
The preparation method of the anti-gravity ultrathin micro heat pipe is simple in process and high in processing precision, a plurality of monocrystalline silicon wafers can be bonded simultaneously through a one-time eutectic bonding process, single or multiple monocrystalline silicon wafers can be produced in large batch, and the preparation method is suitable for application and popularization of products.
Drawings
Fig. 1 is a schematic structural view of the antigravity ultrathin micro heat pipe.
FIG. 2 is a top view of a single crystal silicon wafer after laser machining.
FIG. 3 is a schematic structural diagram of a monocrystalline silicon wafer after laser processing.
FIG. 4 is a schematic diagram of a single shuttle structure of a single crystal silicon wafer.
Fig. 5 is a schematic cross-sectional view of the antigravity ultrathin micro heat pipe.
In the figure, 1 is a monocrystalline silicon piece, 2 is a monocrystalline silicon support, 3 is a fusiform structure, 4 is a groove, and 5 is an inner cavity.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1
The method for manufacturing an anti-gravity ultrathin micro heat pipe in the embodiment is shown in fig. 1, and comprises the following steps:
(1) selecting a monocrystalline silicon wafer which is suitable for laser processing and has higher heat conductivity as a raw material, cleaning the monocrystalline silicon wafer and a monocrystalline silicon bracket by deionized water ultrasonic vibration for 20 minutes, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer in a drying furnace at 95 ℃ for 15 minutes.
(2) As shown in fig. 2 to 4, performing femtosecond laser processing twice on a single surface of a monocrystalline silicon wafer to process a spindle-shaped structure arranged in an array; the method comprises the following steps of firstly processing spindle-shaped structures arranged in an array to serve as capillary wicks, and secondly processing a plurality of grooves with rectangular cross sections along the length direction of a monocrystalline silicon wafer, wherein in the first step, two monocrystalline silicon wafers with the length of 100mm, the width of 40mm and the section thickness of 0.2mm are horizontally placed on a substrate with the length of 240mm and the width of 60mm, the distance between the two monocrystalline silicon wafers is 10mm, sharp grooves with the spindle-shaped structures are processed on the silicon wafers by adopting laser, the wavelength of the laser is 800nm, the energy of the laser is controlled at 100mW, the cutting speed of the laser is 30 mu m/s, the distance between the processed sharp grooves in the long side direction is 150 mu m, the distance in the wide side direction is 65 mu m, and the angle between a laser generator and the silicon wafers is 30 degrees, so that the spindle-shaped array is obtained; and secondly, cutting grooves on two sides of the shuttle-shaped array processed by the laser in the first step by femtosecond laser at intervals of 15 microns, wherein the wavelength of the laser is 500nm, the energy of the laser is controlled at 80mW, and the cutting speed of the laser is 15 microns/s. And obtaining the liquid absorption core with the fusiform surface structure through two times of laser processing. And cleaning the monocrystalline silicon wafer for 20 minutes by adopting deionized water ultrasonic vibration, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer for 15 minutes in a drying furnace at the temperature of 95 ℃.
(3) As shown in fig. 5, two monocrystalline silicon wafers are processed through the step (2), one surfaces of the two monocrystalline silicon wafers with the fusiform arrays are opposite, a monocrystalline silicon support is placed between the two monocrystalline silicon wafers, positioning and clamping are carried out through a clamp, the clamping pressure is about 1.45Pa, then the two monocrystalline silicon wafers and the monocrystalline silicon support are heated for 4 hours in a vacuum environment at 1100 ℃, the two monocrystalline silicon wafers and the monocrystalline silicon support are sealed through a silicon-silicon direct eutectic bonding technology, a micro heat pipe is obtained, the micro heat pipe is a three-layer sealing structure of the monocrystalline silicon wafers, the monocrystalline silicon support and the monocrystalline silicon wafers, and an inner cavity 5 is formed by the two monocrystalline silicon wafers and the monocrystalline silicon support.
(4) On one of the monocrystalline silicon wafers of the micro heat pipe, the distance between the monocrystalline silicon wafer and the side and the right side of the rectangular monocrystalline silicon wafer is 20mm, femtosecond laser drilling without a heat influence area is adopted, a vacuum liquid filling hole is processed, the diameter of the drilling hole is 1mm, the hole depth is 0.2mm, the laser power is 50W, the micro heat pipe is vacuumized through a vacuum filling machine, working medium liquid is filled into the micro heat pipe, the pressure in the cavity of the micro heat pipe is pumped to 15Pa through vacuumizing, then 0.08ml of working medium deionized water is filled, the vacuum liquid filling hole is sealed through laser welding, the welding speed is 10m/min, the output power of laser welding equipment is 20kW, and the anti-gravity ultrathin micro heat pipe is obtained, and the prepared anti-gravity ultrathin micro heat pipe is 100mm in length, 40mm in width, 0.6mm in section thickness, and 0.2mm in wall thickness.
Example 2
The preparation method of the antigravity ultrathin micro heat pipe comprises the following steps:
(1) selecting a monocrystalline silicon wafer which is suitable for laser processing and has higher heat conductivity as a raw material, cleaning the monocrystalline silicon wafer and a monocrystalline silicon bracket by deionized water ultrasonic vibration for 30 minutes, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer in a drying furnace at 80 ℃ for 10 minutes.
(2) Continuously carrying out femtosecond laser processing twice on the single surface of the monocrystalline silicon piece to process a fusiform structure arranged in an array; the method comprises the following steps of firstly processing spindle-shaped structures arranged in an array to serve as capillary wicks, and secondly processing a plurality of grooves with rectangular cross sections along the length direction of a monocrystalline silicon wafer, wherein in the first step, two monocrystalline silicon wafers with the length of 200mm, the width of 40mm and the section thickness of 0.2mm are horizontally placed on a substrate with the length of 480mm and the width of 60mm, the distance between the two monocrystalline silicon wafers is 10mm, sharp grooves with the spindle-shaped structures are processed on the silicon wafers by adopting laser, the wavelength of the laser is 600nm, the energy of the laser is controlled at 90mW, the cutting speed of the laser is 20 mu m/s, the distance between the processed sharp grooves in the long side direction is 200 mu m, the distance between the laser generator and the silicon wafers is 70 mu m, and the angle between the laser generator and the silicon wafers is 40 degrees, so that the spindle-shaped array is obtained; and in the second step, femtosecond laser is adopted to cut grooves on two sides at intervals of 20 microns from two sides of the shuttle-shaped array processed by the laser in the first step, the wavelength of the laser is 450nm, the energy of the laser is controlled at 75mW, and the cutting speed of the laser is 12 microns/s. And obtaining the liquid absorption core with the fusiform surface structure through two times of laser processing. And cleaning the monocrystalline silicon wafer for 30 minutes by adopting deionized water ultrasonic vibration, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer in a drying furnace at the temperature of 80 ℃ for 10 minutes.
(3) Processing two monocrystalline silicon wafers through the step (2), enabling one surfaces of the two monocrystalline silicon wafers with the fusiform arrays to be opposite, placing a monocrystalline silicon support between the two monocrystalline silicon wafers, positioning and clamping the monocrystalline silicon wafers by using a clamp, enabling the clamping pressure to be about 2Pa, heating the monocrystalline silicon wafers for 2 hours in a vacuum environment at the temperature of 500 ℃, sealing the two monocrystalline silicon wafers and the monocrystalline silicon support by using a silicon-silicon direct eutectic bonding technology, and obtaining a micro heat pipe, wherein the micro heat pipe is a three-layer sealing structure of the monocrystalline silicon wafers, the monocrystalline silicon support and the monocrystalline silicon wafers, and the two monocrystalline silicon wafers and the monocrystalline silicon support form an inner cavity together.
(4) On one of the monocrystalline silicon wafers of the micro heat pipe, the distance between the monocrystalline silicon wafer and the side and the right side of the rectangular monocrystalline silicon wafer is 20mm, femtosecond laser drilling without a heat influence area is adopted, a vacuum liquid filling hole is processed, the diameter of the drilling hole is 2mm, the hole depth is 0.2mm, the laser power is 55W, the micro heat pipe is vacuumized by a vacuum filling machine, working medium liquid is filled into the micro heat pipe, the pressure in the cavity of the micro heat pipe is pumped to 15Pa by vacuumizing, then 0.1ml of working medium deionized water is filled, the vacuum liquid filling hole is sealed by laser welding, the welding speed is 5m/min, the output power of laser welding equipment is 15kW, and the anti-gravity ultrathin micro heat pipe is obtained, wherein the prepared anti-gravity ultrathin micro heat pipe is 200mm in length, 40mm in width, 0.6mm in section thickness, and 0.2mm in wall thickness.
Example 3
The preparation method of the antigravity ultrathin micro heat pipe comprises the following steps:
(1) selecting a monocrystalline silicon wafer which is suitable for laser processing and has higher heat conductivity as a raw material, cleaning the monocrystalline silicon wafer and a monocrystalline silicon bracket by deionized water ultrasonic vibration for 20 minutes, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer in a drying furnace at 95 ℃ for 15 minutes.
(2) Continuously carrying out femtosecond laser processing twice on the single surface of the monocrystalline silicon piece to process a fusiform structure arranged in an array; the method comprises the following steps of firstly processing spindle-shaped structures arranged in an array to serve as capillary wicks, and secondly processing a plurality of grooves with rectangular cross sections along the length direction of a monocrystalline silicon wafer, wherein in the first step, 10 monocrystalline silicon wafers with the length of 100mm, the width of 40mm and the section thickness of 0.2mm are horizontally placed on a substrate with the length of 600mm and the width of 120mm, the distance between every two monocrystalline silicon wafers is 20mm, sharp grooves with the spindle-shaped structures are processed on the silicon wafers by adopting laser, the wavelength of the laser is 500nm, the energy of the laser is controlled at 80mW, the cutting speed of the laser is 15 mu m/s, the distance between the processed sharp grooves in the long side direction is 300 mu m, the distance between the laser generator and the silicon wafers is 80 mu m, and the angle between the laser generator and the silicon wafers is 45 degrees to obtain the spindle-shaped array; and secondly, cutting grooves on two sides at intervals of 25 micrometers from two sides of the shuttle array processed by the laser in the first step by adopting femtosecond laser, wherein the wavelength of the laser is 400nm, the energy of the laser is controlled at 70mW, and the cutting speed of the laser is 10 micrometers/s. And (3) obtaining the axis measuring and indicating diagram of the single fusiform pit through two times of laser processing, thereby obtaining the liquid absorbing core with the fusiform surface structure. And cleaning the monocrystalline silicon wafer for 20 minutes by adopting deionized water ultrasonic vibration, wherein the ultrasonic frequency is 25kHz, and drying the monocrystalline silicon wafer for 15 minutes in a drying furnace at the temperature of 95 ℃.
(3) Processing 10 monocrystalline silicon wafers through the step (2), enabling one side of each monocrystalline silicon wafer with the fusiform array to be opposite, placing a monocrystalline silicon support between the two monocrystalline silicon wafers to form five pairs, positioning and clamping the five pairs by using a clamp, enabling the clamping pressure to be about 1.45Pa, heating the five pairs in a vacuum environment at 1100 ℃ for 4 hours, sealing the two monocrystalline silicon wafers and the monocrystalline silicon support by using a silicon-silicon direct eutectic bonding technology to obtain a micro heat pipe, wherein the micro heat pipe is a three-layer sealing structure of the monocrystalline silicon wafers, the monocrystalline silicon support and the monocrystalline silicon wafers, and the two monocrystalline silicon wafers and the monocrystalline silicon support form an inner cavity together.
(4) On one of the monocrystalline silicon wafers of the micro heat pipe, the distance between the monocrystalline silicon wafer and the side and the right side of the rectangular monocrystalline silicon wafer is 20mm, femtosecond laser drilling without a heat influence area is adopted, a vacuum liquid filling hole is processed, the diameter of the drilling hole is 1mm, the hole depth is 0.2mm, the laser power is 50W, the micro heat pipe is vacuumized through a vacuum filling machine, working medium liquid is filled into the micro heat pipe, the pressure in the cavity of the micro heat pipe is pumped to 15Pa through vacuumizing, then 0.08ml of working medium deionized water is filled, then the vacuum liquid filling hole is subjected to laser welding sealing, the welding speed is 10m/min, the output power of laser welding equipment is 20kW, the five-antigravity ultrathin micro heat pipe is obtained, and the prepared antigravity ultrathin micro heat pipe has the length of 100mm, the width of 40mm, the section thickness of 0.6mm and the wall thickness of 0.2 mm.
As mentioned above, the present invention can be better realized, and the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; all equivalent changes and modifications made according to the present disclosure are intended to be covered by the scope of the claims of the present invention.
Claims (10)
1. The preparation method of the antigravity ultrathin micro heat pipe is characterized by comprising the following steps of:
(1) cleaning and drying the monocrystalline silicon wafer and the monocrystalline silicon support;
(2) successively and continuously carrying out laser processing twice on a single surface of a monocrystalline silicon piece to process a fusiform structure arranged in an array and a plurality of grooves with rectangular cross sections along the length direction of the monocrystalline silicon piece, and then cleaning and drying the monocrystalline silicon piece;
(3) processing two monocrystalline silicon wafers through the step (2), wherein one surfaces of the two monocrystalline silicon wafers with the fusiform arrays are opposite, a monocrystalline silicon support is placed between the two monocrystalline silicon wafers, the two monocrystalline silicon wafers and the monocrystalline silicon support are sealed through an eutectic bonding technology, and an inner cavity is formed between the monocrystalline silicon wafers and the monocrystalline silicon support;
(4) and laser drilling is carried out on one of the monocrystalline silicon pieces of the micro heat pipe, a vacuum liquid filling hole is processed, the inner cavity is vacuumized through the vacuum liquid filling hole and is filled with working medium liquid, and then the vacuum liquid filling hole is sealed by laser welding, so that the anti-gravity ultrathin micro heat pipe is obtained.
2. The method for preparing an antigravity ultrathin micro heat pipe according to claim 1, wherein in the step (1), the cleaning is ultrasonic vibration cleaning for at least 20 minutes by using deionized water, and the drying is drying of the monocrystalline silicon wafer at the temperature of 80-95 ℃ for 10-15 minutes.
3. The method for preparing an antigravity ultrathin micro heat pipe according to claim 1, wherein in the step (1), the monocrystalline silicon piece is rectangular, the monocrystalline silicon piece is subjected to two-side polishing treatment in advance, the length of the monocrystalline silicon piece is 100-200 mm, the width of the monocrystalline silicon piece is 30-50 mm, and the thickness of the monocrystalline silicon piece is 0.2-0.25 mm.
4. The method for preparing an antigravity ultrathin micro heat pipe according to claim 3, wherein in the step (1), the monocrystalline silicon support is of a rectangular frame structure, the length, width and thickness of the monocrystalline silicon support are respectively the same as those of the monocrystalline silicon piece, and the frame width of the monocrystalline silicon support is 8-12 mm.
5. The method for preparing the antigravity ultrathin micro heat pipe as claimed in claim 1, wherein in the step (2), in the two laser processing processes, a plurality of grooves with rectangular cross sections are processed for the first time along the length direction of the monocrystalline silicon piece, and spindle-shaped structures arranged in an array are processed for the second time; or processing the spindle-shaped structures arranged in an array for the first time, and processing a plurality of grooves with rectangular cross sections along the length direction of the monocrystalline silicon piece for the second time.
6. The method for preparing an antigravity ultrathin micro heat pipe as claimed in claim 1, wherein in the step (2), the laser processing is femtosecond laser processing, the wavelength of the laser is 400 nm-800 nm, the energy of the laser is 80-100 mW, and the cutting speed of the laser is not more than 30 μm/s.
7. The method for preparing an antigravity ultrathin micro heat pipe as claimed in claim 1, wherein in the step (3), the eutectic bonding technology is a silicon-silicon direct eutectic bonding technology.
8. The method for preparing the antigravity ultrathin micro heat pipe according to claim 1, wherein in the step (4), the laser drilling adopts a femtosecond laser drilling technology, the vacuumizing is to pump the pressure in the micro heat pipe cavity to 10-20 Pa, and the working medium liquid adopts a refrigerant.
9. The method for preparing an antigravity ultrathin micro heat pipe as claimed in claim 1, wherein in the step (3), a plurality of pairs of monocrystalline silicon wafers and monocrystalline silicon supports are simultaneously sealed by a eutectic bonding technology.
10. The method for preparing an antigravity ultrathin micro heat pipe as claimed in claim 1, wherein in the step (4), a vacuum filling machine is adopted when the inner cavity is vacuumized and the working medium liquid is filled into the inner cavity.
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| CN207265042U (en) * | 2017-10-26 | 2018-04-20 | 尹航 | A kind of copper column type water-cooling plate |
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2019
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