CN111834324A - Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof - Google Patents
Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof Download PDFInfo
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- CN111834324A CN111834324A CN201910297599.2A CN201910297599A CN111834324A CN 111834324 A CN111834324 A CN 111834324A CN 201910297599 A CN201910297599 A CN 201910297599A CN 111834324 A CN111834324 A CN 111834324A
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 230000005496 eutectics Effects 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 238000007650 screen-printing Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000000227 grinding Methods 0.000 claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 abstract description 8
- 238000001723 curing Methods 0.000 abstract description 6
- 238000005553 drilling Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 231100000252 nontoxic Toxicity 0.000 abstract description 5
- 230000003000 nontoxic effect Effects 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 30
- 239000010409 thin film Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
A polished thick film substrate suitable for flip chip and eutectic device packaging and a method for manufacturing the same, the substrate comprising: at least one circuit wire hole, which penetrates through the first surface and the second surface of the substrate; at least one lead, the lead is filled in the circuit lead hole; a crystal fixing surface, wherein the screen printing is carried out on the first surface of the substrate, and the crystal fixing surface is connected with the first end of the lead; and the electrode surface is screen-printed on the second surface of the substrate and is connected with the second ends of the leads. The substrate finished product has the advantages of moderate metal thickness, good electrical conductivity, high circuit precision, low manufacturing cost, good heat dissipation, good high-power application applicability, good high-frequency application applicability, environmental protection requirement meeting and the like. The substrate is manufactured by non-chemical wet processing through non-toxic steps of laser processing drilling, screen printing, sintering curing, grinding and polishing and the like.
Description
Technical Field
The present invention relates to a polished thick film substrate suitable for flip chip and eutectic device packaging and the manufacturing method thereof; in particular to a substrate which is produced by non-chemical wet process through non-toxic steps such as laser processing drilling, screen printing, sintering curing, grinding and polishing and meets the requirement of environmental protection and a manufacturing method innovation.
Background
In the conventional direct copper-clad DPC substrate product, the thickness of the metal layer is between 50 and 100 μm, and the copper-clad DPC substrate has the advantages of high conductivity and good high-power application applicability due to large copper-clad thickness, but in the copper-clad DPC substrate process, a metal wire Via (Via) is easy to generate a void, so that the stability of the substrate process is reduced, and in order to fill the metal wire Via, the thickness of copper-clad on the surface electrode must be increased, so that the precision of the circuit is relatively reduced. The copper-clad DPC substrate needs to be matched with wet chemical processes such as electroplating and photomask, which not only has the problem of high manufacturing cost, but also has the problem of environmental pollution caused by toxic substances in the wet processes such as electroplating and photomask.
In the conventional Thin Film substrate product, the thickness of the metal layer is less than 1um, and the metal layer has the disadvantages of poor conductivity and incapability of conducting high current amount due to small thickness, and the metal wire Via (Via) of the Thin Film substrate still needs to be filled by an electroplating method, but the electroplating process still easily generates a void, so that the stability of the substrate process is reduced. The Thin Film substrate has the advantages of high line precision and small capacitive reactance effect of a Thin Film line, but the vacuum process has high energy consumption and the exhaust problem causes environmental pollution, but the vacuum process has the defect that the Thin Film substrate product is difficult to overcome.
Disclosure of Invention
The invention aims to provide a polishing thick film substrate suitable for packaging flip chips and eutectic crystal elements and a manufacturing method thereof, wherein the polishing thick film substrate is a substrate finished product which has moderate metal thickness, good electrical conductivity, high circuit precision, low manufacturing cost, good heat dissipation, good high-power application applicability, good high-frequency application applicability and meets the requirement of environmental protection, and the plate is produced by non-chemical wet processing through non-toxic steps of laser processing drilling, screen printing, sintering, curing, grinding and polishing and the like, so that the environmental protection effect is better improved.
In order to achieve the above object, the present invention discloses a polished thick film substrate suitable for flip chip and eutectic device packaging, which is characterized in that the substrate comprises:
at least one circuit wire hole, which penetrates through the first surface and the second surface of the substrate;
at least one lead, the lead is filled in the circuit lead hole;
a crystal fixing surface, wherein the screen printing is carried out on the first surface of the substrate, and the crystal fixing surface is connected with the first end of the lead; and the electrode surface is screen-printed on the second surface of the substrate and is connected with the second ends of the leads.
Wherein, the substrate is ceramic or glass or single crystal material.
Wherein, the wire or the crystal fixing surface or the electrode surface is screen printing thick film metal.
Wherein, the screen printing thick film metal is silver, gold, copper, palladium, nickel, tungsten or alloy thereof.
Wherein, the screen printing thick film metal of the crystal fixing surface and the electrode surface is polished simultaneously through the whole surface, so that the substrate is suitable for packaging of flip chips and eutectic elements.
Wherein, a plating layer is applied on the surface of the solid crystal surface or the electrode surface.
Wherein, the plating layer is an electroless plating or nickel plating layer.
Also discloses a manufacturing method of the polished thick film substrate suitable for packaging flip chips and eutectic elements, which is characterized by comprising the following steps:
a) grinding and leveling the substrate, and processing the first surface and the second surface of the substrate by adopting double-sided planetary plane grinding or fixed abrasive grain grinding wheel grinding equipment;
b) laser processing circuit wire holes to laser process the first and second surfaces of the substrate;
c) the conductive material is filled in the circuit wire hole, and the paste thick film metal is filled in the circuit wire hole by using the scraper and the screen printing plate so as to form a wire connecting the first surface and the second surface;
d) screen printing of a solid crystal face and an electrode face, wherein paste thick film metal is printed on the first face and the second face of the substrate by using a scraper and a screen printing plate so as to form the solid crystal face and the electrode face, the solid crystal face is connected with the first end of the lead, and the electrode face is connected with the second end of the lead;
e) sintering and solidifying the solid crystal face and the electrode face, and sintering and densifying the screen printing thick film metal of the solid crystal face and the electrode face by using an atmospheric furnace or an atmosphere furnace;
f) polishing the solid crystal face and the electrode face, and simultaneously polishing the solid crystal face single face or both faces of the substrate surface together with the electrode face by adopting a single-face pressurized type or fixed abrasive grain grinding wheel or a double-face planetary plane polishing machine.
Wherein the method further comprises a step g) of applying a plating layer, and applying an electroless or electroplating nickel-gold layer to the solid crystal surface and the electrode surface.
The method also comprises a step h) of electrical test for confirming the electrical function, and electrical conduction test of the crystal fixing surface, the lead and the electrode surface is carried out.
Therefore, the polished thick film substrate suitable for packaging flip chips and eutectic crystal elements and the manufacturing method thereof have the advantages that the substrate finished product has moderate metal thickness, good electrical conductivity, high circuit precision, low manufacturing cost, good heat dissipation performance, good high-power application applicability, good high-frequency application applicability, environmental protection requirement meeting and the like. The substrate is manufactured by non-toxic steps such as laser processing drilling, screen printing, sintering curing, grinding and polishing, is a substrate product produced by a non-chemical wet process, fully meets the environmental protection requirement, has a simple structure, and fully meets patent requirements of novelty, advancement and industrial utilization.
Drawings
FIG. 1: the invention discloses a cross-sectional view of a substrate finished product.
FIG. 2: the invention substrate is an exploded view of the components.
FIG. 3: the invention discloses an embodiment for applying a coating on the surface of a finished substrate.
FIG. 4: the invention discloses a method for manufacturing a substrate.
FIG. 5: the invention discloses a cross-sectional view of each step of a substrate manufacturing method.
FIG. 6: the manufacturing method of the substrate adds a block diagram of a step of applying the coating.
FIG. 7: the manufacturing method of the substrate adds a block diagram of an electrical property testing step.
Detailed Description
Referring to fig. 1 and 2, the polished thick film substrate for flip chip and eutectic device package of the present invention comprises: at least one circuit wire hole 2, wherein the circuit wire hole 2 penetrates through the first surface 11 and the second surface 12 of the substrate 1. At least one lead 3, the lead 3 filling the circuit wire hole 2. A crystal-fixing surface 4 screen-printed on the first surface 11 of the substrate 1, the crystal-fixing surface 4 being connected to the first end of the conductive wire 3. An electrode surface 5 screen-printed on the second surface 12 of the substrate 1, the electrode surface 5 being connected to the second ends of the leads 3. Wherein the substrate 1 is a ceramic or glass or a single crystal material. The conducting wire 3 or the solid crystal face 4 or the electrode face 5 is a screen printing thick film metal. The screen printing thick film metal is silver or gold or copper or palladium or nickel or tungsten or alloy thereof. The thickness of the screen printed thick film metal is about 10-50 microns. The screen printing thick film metal of the crystal fixing face 4 and the electrode face 5 is polished at the same time through the whole face, so that the crystal fixing face is suitable for packaging crystal covering and eutectic crystal elements.
In addition, referring to fig. 3, a plating layer 6 may be applied on the surface of the die bonding surface 4 or the electrode surface 5 of the substrate 1, the plating layer 6 is an electroless or electroplated nickel layer, and the plating layer 6 has a protective property, so as to enhance the reliability of the die bonding surface 4 and the electrode surface 5.
Referring to fig. 4 and 5, the method for manufacturing a polished thick film substrate suitable for flip chip and eutectic device packaging according to the present invention comprises the following steps:
a) the substrate 1 is ground and leveled, and the first surface 11 and the second surface 12 of the substrate 1 are processed by using a double-sided planetary plane grinding or fixed abrasive grain grinding device (see step a) of fig. 5), so that the first surface 11 and the second surface 12 become high-precision parallel planes and have consistent surface roughness.
b) The circuit wire holes 2 are laser-processed to penetrate the first surface and the second surface of the substrate (see step b of fig. 5) by a laser processing method, and the diameter of the circuit wire holes 2 is 100um or less, which is suitable for high-precision packaging circuits.
c) Filling the circuit wire holes 2 with conductive material, filling the circuit wire holes 2 with paste-like thick film metal by using a scraper and a screen (see step c) of fig. 5), thereby forming a wire 3 connecting the first surface 11 and the second surface 12, wherein the screen-printed thick film metal is silver, gold, copper, palladium, nickel, tungsten or an alloy thereof, and the screen-printed thick film metal fills the circuit wire holes 2 fully, which can meet the requirement of large current.
d) And (3) screen printing of a fixed crystal surface and an electrode surface, wherein paste thick film metal is printed on the first surface 11 and the second surface 12 of the substrate 1 by using a scraper and a screen (see step d of fig. 5), so as to form a fixed crystal surface 4 and an electrode surface 5, the fixed crystal surface 4 is connected with the first end of the lead 3, the electrode surface 5 is connected with the second end of the lead 3, and the alignment screen printing can achieve high-precision graphic requirements by using optical (CCD) alignment.
e) Sintering and solidifying the solid crystal face 4 and the electrode face 5, sintering and densifying the solid crystal face 4 and the thick film metal of the electrode face 5 by using an atmosphere or atmosphere furnace (please refer to step e of fig. 5), so that the wire 3, the solid crystal face 4 and the electrode face 5 are chemically combined to improve the adhesion.
f) Polishing the solid crystal face 4 and the electrode face 5, processing by a single-side pressurized grinding wheel or a fixed abrasive grain grinding wheel or a double-side planetary plane polisher (please refer to step f) of figure 5), polishing the solid crystal face 4 on the surface of the substrate on one side or polishing both sides of the electrode face 5, wherein the surface roughness of the polished solid crystal face 4 and the polished electrode face 5 can reach Ra < 0.2um, and the method is suitable for packaging processes of crystal coating and eutectic elements. The present invention is different from the local small area polishing method of the individual solid crystal face and the electrode face, and is a high efficiency process.
Depending on the product application, the invention comprises the step g) of applying a plating layer 6 (see fig. 3 and 6), applying an electroless or electroplating nickel-gold layer on the surface of the solid crystal plane 4 and the electrode plane 5, wherein the plating layer 6 can improve the reliability of the solid crystal plane 4 and the electrode plane 5.
In order to ensure the electrical function, the present invention includes a step h) of electrical testing (see fig. 7), which is to perform an electrical conduction test on the solid crystal plane 4, the wire 3 and the electrode surface 5 to ensure that the electrical functions of the solid crystal plane 4, the wire 3 and the electrode surface 5 are 100%.
The polishing thick film substrate suitable for packaging the flip chip and the eutectic element and the manufacturing method thereof have the following advantages:
1. the substrate is prepared by non-toxic steps such as laser processing drilling, screen printing, sintering curing, grinding and polishing, and the like, is a substrate product produced by a non-chemical wet process, and fully meets the requirement of environmental protection.
2. The substrate finished product has the advantage of high-frequency induction applicability, and can be widely applied to ceramic high-frequency modules.
3. The substrate finished product has the advantages of high power application and good applicability, and the thick film metal of the conductor has good thermal expansion coefficient matching with the substrate and good thermal cycle resistance.
4. The substrate finished product has the advantage of good heat dissipation, and the thickness of the screen printing thick film metal is moderate, thereby being beneficial to the heat diffusion of the flip chip and the eutectic element.
5. The substrate finished product has the advantage of low manufacturing cost, the manufacturing process comprises laser drilling, screen printing, sintering, curing, grinding, polishing and the like, and the chemical wet process is not adopted, so that the substrate finished product has the advantage of environmental protection, and the production efficiency can be greatly improved and the manufacturing cost can be reduced.
6. The substrate finished product has the advantage of high circuit precision because of adopting the optical alignment high-precision screen printing process.
7. The metal wire hole (Via) of the substrate finished product has the advantage of good conductivity, and the paste thick film metal is filled into the circuit wire hole by using the scraper and the screen printing plate, so that the circuit wire hole is fully filled with the paste thick film metal, and the conductivity is improved.
8. The metal thickness of the substrate finished product is between 10-50 um, the substrate finished product has the advantage of proper thickness, and the defects that the conventional direct copper-clad DPC substrate finished product has too thick metal thickness (50-100 um) and the conventional thin film ThinFilm substrate finished product has too thin metal thickness (less than 1um) are overcome.
In summary, the invention is applicable to the manufacture of the polished thick film substrate for flip chip and eutectic device package, and the manufacturing method thereof really meets the patent requirements of novelty, advancement and industrial applicability.
However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention should not be limited thereby, and all the simple equivalent changes and modifications made according to the claims and the description of the present invention are still within the scope of the present invention.
Claims (10)
1. A polished thick film substrate suitable for flip chip and eutectic device packaging, the substrate comprising:
at least one circuit wire hole, which penetrates through the first surface and the second surface of the substrate;
at least one lead, the lead is filled in the circuit lead hole;
a crystal fixing surface, wherein the screen printing is carried out on the first surface of the substrate, and the crystal fixing surface is connected with the first end of the lead;
and the electrode surface is screen-printed on the second surface of the substrate and is connected with the second ends of the leads.
2. The polished thick film substrate suitable for flip-chip and eutectic device packaging of claim 1, wherein the substrate is ceramic or glass or a single crystal material.
3. The polished thick film substrate suitable for flip-chip and eutectic device package as claimed in claim 1, wherein the conductive lines or the crystal planes or the electrode planes are screen printed thick film metal.
4. The polished thick film substrate suitable for flip-chip and eutectic device packaging of claim 3, wherein the screen printed thick film metal is silver or gold or copper or palladium or nickel or tungsten or their alloys.
5. The polished thick film substrate suitable for flip chip and eutectic device package as claimed in claim 3, wherein the screen printed thick film metal of the die bonding surface and the electrode surface is polished simultaneously through the whole surface, making the substrate suitable for flip chip and eutectic device package.
6. The polished thick film substrate suitable for flip chip and eutectic device package as claimed in claim 1, wherein a plating layer is applied on the surface of the die face or the electrode face.
7. The polished thick film substrate suitable for flip chip and eutectic device packaging of claim 6, wherein the plating is electroless or nickel plating.
8. A manufacturing method of a polished thick film substrate suitable for flip chip and eutectic device packaging is characterized by comprising the following steps:
a) grinding and leveling the substrate, and processing the first surface and the second surface of the substrate by adopting double-sided planetary plane grinding or fixed abrasive grain grinding wheel grinding equipment;
b) laser processing circuit wire holes to laser process the first and second surfaces of the substrate;
c) the conductive material is filled in the circuit wire hole, and the paste thick film metal is filled in the circuit wire hole by using the scraper and the screen printing plate so as to form a wire connecting the first surface and the second surface;
d) screen printing of a solid crystal face and an electrode face, wherein paste thick film metal is printed on the first face and the second face of the substrate by using a scraper and a screen printing plate so as to form the solid crystal face and the electrode face, the solid crystal face is connected with the first end of the lead, and the electrode face is connected with the second end of the lead;
e) sintering and solidifying the solid crystal face and the electrode face, and sintering and densifying the screen printing thick film metal of the solid crystal face and the electrode face by using an atmospheric furnace or an atmosphere furnace;
f) polishing the solid crystal face and the electrode face, and simultaneously polishing the solid crystal face single face or both faces of the substrate surface together with the electrode face by adopting a single-face pressurized type or fixed abrasive grain grinding wheel or a double-face planetary plane polishing machine.
9. The method of claim 8, further comprising a step of g) applying a plating layer, applying an electroless or electroplating nickel-gold layer on the surface of the solid crystal plane and the electrode plane.
10. The method as claimed in claim 8, wherein the method further comprises step h) performing electrical conduction test on the die bonding surface, the conductive wires and the electrode surface to confirm the electrical function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297599.2A CN111834324A (en) | 2019-04-15 | 2019-04-15 | Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297599.2A CN111834324A (en) | 2019-04-15 | 2019-04-15 | Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111834324A true CN111834324A (en) | 2020-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910297599.2A Withdrawn CN111834324A (en) | 2019-04-15 | 2019-04-15 | Polished thick film substrate suitable for packaging flip chip and eutectic crystal element and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN111834324A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201355611Y (en) * | 2009-01-23 | 2009-12-02 | 九豪精密陶瓷(昆山)有限公司 | Die bonding base plate with surface polishing layer |
| CN104412720A (en) * | 2012-05-02 | 2015-03-11 | 陶瓷技术有限责任公司 | Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
-
2019
- 2019-04-15 CN CN201910297599.2A patent/CN111834324A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201355611Y (en) * | 2009-01-23 | 2009-12-02 | 九豪精密陶瓷(昆山)有限公司 | Die bonding base plate with surface polishing layer |
| CN104412720A (en) * | 2012-05-02 | 2015-03-11 | 陶瓷技术有限责任公司 | Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias |
| CN105491795A (en) * | 2014-09-18 | 2016-04-13 | 浙江德汇电子陶瓷有限公司 | Method for manufacturing ceramic metallic substrate, and ceramic metallic substrate manufactured by the method |
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Application publication date: 20201027 |
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