CN212517193U - High-thermal-conductivity silicon carbide device packaging structure - Google Patents
High-thermal-conductivity silicon carbide device packaging structure Download PDFInfo
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- CN212517193U CN212517193U CN202021330524.4U CN202021330524U CN212517193U CN 212517193 U CN212517193 U CN 212517193U CN 202021330524 U CN202021330524 U CN 202021330524U CN 212517193 U CN212517193 U CN 212517193U
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- circuit layer
- silicon carbide
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Abstract
The utility model discloses a high thermal conductivity carborundum device packaging structure. The high-thermal-conductivity silicon carbide device packaging structure comprises an insulating substrate, a circuit layer, a metal layer and a heat sink, wherein the insulating substrate is positioned between the circuit layer and the metal layer, and a plurality of heat conduction windows are formed in the lower surface of the metal layer and cover the heat sink. The thickness of the circuit layer is in the range of 0.1 mm-3.0 mm, and the circuit layer is used for forming a required circuit pattern through etching. The insulating substrate is used for preventing the circuit layer from being electrically contacted with the metal layer. The thickness of the metal layer is within the range of 0.1 mm-4.0 mm, the metal layer is used for reducing the linear expansion difference between the insulating substrate and the heat sink, and the thickness ratio of the metal layer to the circuit layer is greater than or equal to 1.4 and less than or equal to 12. Therefore, warping of the packaging structure can be effectively reduced, and the heat conductivity and reliability of the silicon carbide device structure are improved.
Description
Technical Field
The utility model relates to a carborundum device encapsulation field especially relates to a high heat conductivity carborundum device packaging structure.
Background
Silicon carbide power semiconductor devices typically include a silicon chip, a semiconductor circuit, a circuit substrate, and a heat sink. The silicon carbide semiconductor device can be stably operated at a temperature of 250 to 300 ℃, and the output of the power device can be significantly increased. The circuit board is made of insulating aluminum nitride or the like having high thermal conductivity. The heat sink has a higher thermal conductivity and ensures a more easily fabricated heat dissipating device in a large area, such as Cu, Al, Cu-Mo or Cu-W. The components are bonded using an adhesive, solder, or the like. The metal layer is positioned between the chip and the heat sink and plays double roles of heat dissipation transition and stress transition, the difference between the linear thermal expansion coefficient of copper and the thermal expansion coefficient of the semiconductor substrate is large, and thermal stress is applied to the substrate during packaging. The substrate is repeatedly bent due to a change in temperature, and cracks are easily generated at the bonding position between the ceramic plate and the solder, which causes warpage of the package substrate, separation of the bonding portion, and deterioration of reliability.
Conventionally, the warpage of the power module substrate is reduced by increasing the heat dissipation amount of the heat sink, so as to reduce the temperature level of the power module substrate and further reduce the linear expansion difference. As the power of the silicon carbide device increases, the heat generation increases, and the heat dissipation amount between the substrate and the heat sink, the temperature difference between the substrates of the power module, and the warping amount of the material need to be further improved.
SUMMERY OF THE UTILITY MODEL
In view of this, it is necessary to provide a high thermal conductivity silicon carbide device package structure, which can effectively reduce the warpage of the package structure and improve the thermal conductivity and reliability of the silicon carbide device structure.
The utility model discloses a reach the technical scheme that above-mentioned purpose proposed as follows:
the utility model provides a high thermal conductivity carborundum device packaging structure, includes heat sink, high thermal conductivity carborundum device packaging structure still includes insulating substrate, circuit layer and metal level, insulating substrate is located the circuit layer reaches between the metal level, the lower surface of metal level is formed with a plurality of heat conduction windows, and cover in on the heat sink, the thickness of circuit layer is in 0.1mm ~ 3.0 mm's within range for form required circuit pattern through the sculpture, insulating substrate is used for preventing the circuit layer with metal level electrical contact, the thickness of metal level is in 0.1mm ~ 4.0 mm's within range, is used for reducing insulating substrate with linear expansion difference between the heat sink, just the metal level with the ratio of the thickness of circuit layer is more than or equal to 1.4 and is less than or equal to 12.
Further, the plurality of heat conduction windows are distributed in an array mode, and the shape of each heat conduction window is one of a cylinder, a cuboid or a rhombus cylinder.
Further, the insulating substrate is one of an aluminum nitride ceramic material, an aluminum oxide ceramic material or a silicon carbide ceramic material.
Furthermore, an adhesive layer is arranged between every two adjacent laminated layers among the circuit layer, the insulating substrate, the metal layer and the heat sink, and the adhesive layer is made of an active metal brazing material.
Further, the heat sink is made of an Al-SiC porous composite material.
Above-mentioned utility model provides a high thermal conductivity carborundum device packaging structure still through the thickness design with the circuit layer in 0.1mm ~ 3.0 mm's within range, still through the thickness design with the metal level in 0.1mm ~ 4.0 mm's within range, and make the metal level with the ratio of the thickness of circuit layer is more than or equal to 1.4 and is less than or equal to 12. Therefore, the warping of the device packaging structure can be effectively reduced, and the reliability of the silicon carbide device is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a high thermal conductivity silicon carbide device package according to a preferred embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a preferred embodiment of the metal layer and the lower surface of the metal layer in fig. 1.
Fig. 3 is a schematic structural diagram of another preferred embodiment of the lower surface of the metal layer in fig. 1.
Fig. 4 is a schematic view of the warpage measurement of the high thermal conductivity silicon carbide device package structure of the present invention.
Description of the main elements
Silicon carbide encapsulation structure 10
Thermally conductive window 32
Heat sink 4
The following detailed description of the invention will be further described in conjunction with the above-identified drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The utility model provides a high thermal conductivity carborundum device packaging structure 10. Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a preferred embodiment of the present invention. The high-thermal-conductivity silicon carbide device packaging structure 10 comprises a circuit layer 1, an insulating substrate 2, a metal layer 3 and a heat sink 4. The insulating substrate 2 is located between the circuit layer 1 and the metal layer 3, and the lower surface of the metal layer 3 covers the heat sink 4.
The circuit layer 1 is formed of a copper plate made of copper or a copper alloy for forming a desired circuit pattern by etching. The thickness of the circuit layer 1 is within the range of 0.1 mm-3.0 mm. The insulating substrate 2 is made of one of an aluminum nitride ceramic material, an aluminum oxide ceramic material or a silicon carbide ceramic material, and is used for preventing the circuit layer 1 from being electrically contacted with the metal layer 3. The thickness of the insulating substrate 2 is in the range of 0.3mm to 1.0 mm. The metal layer 3 is formed of a copper plate made of copper or a copper alloy, and is used for reducing a linear expansion difference between the insulating substrate 2 and the heat sink 4, and has a dual function of excessive heat dissipation and excessive stress. The thickness of the metal layer 3 is within the range of 0.1mm to 4.0 mm. The ratio of the thickness of the metal layer 3 to the thickness of the circuit layer 1 is greater than or equal to 1.4 and less than or equal to 12.
Furthermore, an adhesive layer 5 is arranged between every two adjacent laminated layers among the circuit layer 1, the insulating substrate 2, the metal layer 3 and the heat sink 4. The bonding layer 5 is an active metal brazing material, such as gold-tin solder. The thickness of the adhesive layer 5 is in the range of 0.015mm to 0.3 mm.
Specifically, when the metal layer 3 thickness L3 is too large, the thermal expansion of the metal layer 3 will cause the insulating substrate 2 to crack; when the thickness L3 of the metal layer is too small, the metal layer 3 is not strong enough, and warping will occur between the insulating substrate 2 and the heat sink 4. When the thickness L1 of the circuit layer 1 is too small, the adhesive material in the adhesive layer 5 between the circuit layer 1 and the insulating substrate 2 may seep out of the surface of the circuit layer 1 by heating; when the thickness L1 of the circuit layer 1 is too large, the insulating substrate 2 may be broken after heating because the expansion coefficient of metal is larger than that of ceramic. When the thickness L1 of the circuit layer 1 is greater than the thickness L3 of the metal layer 3, the influence of thermal expansion of the circuit layer 1 increases, thereby causing warpage.
Therefore, by reasonably setting the thickness proportion relationship between the circuit layer 1 and the metal layer 3, the warping generated among the circuit layer 1, the insulating substrate 2, the metal layer 3 and the heat sink 4 can be effectively reduced.
Referring to fig. 2 and 3, a plurality of thermal windows 32 are formed on the lower surface of the metal layer 3. The heat conduction windows 32 are embedded in the adhesive layer 5 between the metal layer 3 and the heat sink 4. The plurality of thermal windows 32 are arranged in an array. The shape of the heat conducting windows 32 is one of a cylinder, a cuboid or a mitsubishi cylinder. The thickness of the heat conducting windows 32 is smaller than or equal to that of the bonding layer 5, so that the bonding reliability is ensured. The thickness of the plurality of heat conduction windows 32 is within the range of 0.005mm to 0.2 mm. In this way, a channel can be arranged in the bonding layer 5 with relatively low thermal conductivity, so that the heat conduction contact area is increased, and heat can be efficiently led out; meanwhile, the heat conducting windows 32 distributed in an array also contribute to enhancing the strength of the metal layer 3 and reducing the thickness of the metal layer 3. Therefore, the warping of the device packaging structure can be further reduced, and the heat conductivity and the reliability of the silicon carbide device are improved.
The heat sink 4 is an AL-SiC porous body composite material in which the weight ratio of SiC powder is 92% or more. In the present embodiment, the weight ratio of the SiC powder is 96% or more, and the mass of the metal element (e.g., iron, nickel, and cobalt element) is small. The Al/SiC ceramic composite material can be prepared by an infiltration method, specifically, Al is infiltrated into pores of a three-dimensional SiC ceramic network structure by a melt infiltration method, the prepared composite material is cooled to room temperature and taken out from a cavity, and a heat sink with a preset shape is generated through a grinding process, an electric discharge machining process, a polishing process and the like.
It should be noted that the packaging structure provided above can be used for packaging with silicon carbide device modules, and can also be used for packaging with other semiconductor power devices, thereby achieving the purposes of improving heat dissipation efficiency and reducing warpage.
Referring to fig. 4, fig. 4 is a schematic view illustrating warpage measurement of a high thermal conductivity silicon carbide device package structure according to a preferred embodiment of the present invention. The center C of the bonding surface of the heat sink 4 and the metal layer 3 is set as the center of a measurement area S, and the longest length of the measurement area S is set as L. When the heat sink 4 is heated to 250 ℃ in the measurement area S, the warp value of the length L moving in the vertical direction is X, and the range is-40 multiplied by 10-6 (mm-1)～40×10-6(mm-1) To (c) to (d); when the heat sink 4 is cooled to 30 ℃, the warp value of the length L moving in the vertical direction is Y, and the range is-20 multiplied by 10-6(mm-1)～20×10-6(mm-1) In the meantime. The difference between X and Y (Y-X) is-15.0X 10-6(mm-1)～15.0×10-6(mm-1) In the meantime. Therefore, the utility model provides a high thermal conductivity carborundum device packaging structure can reduce device packaging structure warpage effectively.
To sum up, the utility model provides a high thermal conductivity carborundum device packaging structure is through the thickness design with circuit layer 1 at 0.1mm ~ 3.0 mm's within range, still through the thickness design with metal level 3 at 0.1mm ~ 4.0 mm's within range, and make the metal level 3 with the ratio of the thickness of circuit layer 1 is more than or equal to 1.4 and is less than or equal to 12. Therefore, the warping of the device packaging structure can be effectively reduced, and the heat conductivity and the reliability of the silicon carbide device are improved.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific/preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. For those skilled in the art to which the invention pertains, a plurality of alternatives or modifications can be made to the described embodiments without departing from the concept of the invention, and these alternatives or modifications should be considered as belonging to the protection scope of the invention. In the description herein, references to the description of the term "one embodiment," "some embodiments," "preferred embodiments," "an example," "a specific example," or "some examples" or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Claims (5)
1. The utility model provides a high thermal conductivity carborundum device packaging structure, includes the heat sink, its characterized in that, high thermal conductivity carborundum device packaging structure still includes insulating substrate, circuit layer and metal level, insulating substrate is located the circuit layer reaches between the metal level, the lower surface of metal level is formed with a plurality of heat conduction windows, and cover in on the heat sink, the thickness of circuit layer is in 0.1mm ~ 3.0 mm's scope for form required circuit pattern through the sculpture, insulating substrate is used for preventing the circuit layer with metal level electrical contact, the thickness of metal level is in 0.1mm ~ 4.0 mm's scope, is used for reducing insulating substrate with linear expansion difference between the heat sink, just the metal level with the ratio of the thickness of circuit layer is more than or equal to 1.4 and is less than or equal to 12.
2. The high thermal conductivity silicon carbide device package structure of claim 1, wherein the plurality of thermal conduction windows are distributed in an array, and each of the plurality of thermal conduction windows is one of a cylinder, a cuboid, or a mitsubishi cylinder.
3. The high thermal conductivity silicon carbide device package structure of claim 1, wherein the insulating substrate is one of an aluminum nitride ceramic material, an aluminum oxide ceramic material, or a silicon carbide ceramic material.
4. The high thermal conductivity silicon carbide device package of claim 1, wherein an adhesive layer is disposed between each adjacent stack of the circuit layer, the insulating substrate, the metal layer, and the heat sink, the adhesive layer being an active metal brazing material.
5. The high thermal conductivity silicon carbide device package structure of claim 1, wherein the heat sink is a porous composite of Al-SiC.
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| CN202021330524.4U CN212517193U (en) | 2020-07-07 | 2020-07-07 | High-thermal-conductivity silicon carbide device packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755413A (en) * | 2020-07-07 | 2020-10-09 | 深圳基本半导体有限公司 | High-thermal-conductivity silicon carbide device packaging structure and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755413A (en) * | 2020-07-07 | 2020-10-09 | 深圳基本半导体有限公司 | High-thermal-conductivity silicon carbide device packaging structure and method |
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