CN213242534U - AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device - Google Patents
AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device Download PDFInfo
- Publication number
- CN213242534U CN213242534U CN202022825897.5U CN202022825897U CN213242534U CN 213242534 U CN213242534 U CN 213242534U CN 202022825897 U CN202022825897 U CN 202022825897U CN 213242534 U CN213242534 U CN 213242534U
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- alsic
- power device
- oxide film
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation, it includes AlSiC heat dissipation base plate, the surface of AlSiC base plate is equipped with the oxide film insulating layer, the surface of oxide film insulating layer is equipped with the conductive film, oxide film insulating layer material is AlSiC's oxide. The multilayer structure of the many material types that traditional heat dissipation packaging structure formed for metal base heat dissipation base plate and insulating ceramic copper-clad plate welding adopts the technical scheme of the utility model, reduced the material type, just also reduced the thermal mismatch, solved traditional packaging structure in the many and interface problems of material type, reduced material thermal resistance and interfacial thermal resistance, improve overall structure heat-sinking capability, reduce welding processes, reduced manufacturing cost, process flow is simple, easily realizes automated production.
Description
Technical Field
The utility model relates to an electron heat dissipation base plate technical field especially relates to an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation.
Background
With the rapid development of modern microelectronic technology, electronic systems and electronic devices are developing toward high integration, miniaturization, high energy, high efficiency and high reliability. The high integration of electronic systems inevitably brings high power density, which causes electronic devices to generate high heat, and the excessive working temperature can seriously affect the electrical performance, mechanical performance, thermal stability, thermal cycle reliability and other performances of electronic components, so that the solution of the heat dissipation problem is an important link for the continued forward development of electronic packaging. The heat dissipation function in the packaging structure is mostly born by the insulating ceramic copper-clad plate and the metal-based heat dissipation substrate. In a traditional power chip packaging structure, an insulating ceramic copper-clad plate and a metal heat dissipation substrate are often connected through brazing, so that obvious material thermal resistance and interface thermal resistance caused by multiple layers of materials exist in the packaging structure, and the whole structure is difficult to dissipate heat; meanwhile, because the difference between the Coefficient of Thermal Expansion (CTE) of the insulating ceramic copper-clad plate and the metal-based heat dissipation substrate is large, the connection or material fracture is easily caused by thermal mismatch stress, and the thermal cycle reliability of the packaging structure is obviously reduced.
SUMMERY OF THE UTILITY MODEL
To the technical problem, the utility model discloses an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation has improved packaging structure's heat dispersion.
To this end, the technical scheme of the utility model is that:
an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device comprises an AlSiC substrate, wherein an oxide film insulation layer is arranged on the surface of the AlSiC substrate, and a conductive film is printed on the surface of the oxide film insulation layer; the material of the oxide film insulating layer is AlSiC oxide. Further, the composition of the oxide of AlSiC contains Al2O3And SiO2。
By adopting the technical scheme, in the whole integrated substrate, the oxide film insulating layer is a common oxidation product of Al and SiC in the AlSiC substrate, and the oxide film insulating layer not only has good insulating property, but also has better bonding property with the AlSiC substrate. The integrated substrate has few types of materials and few interfaces, reduces the types of materials, and also reduces the thermal stress caused by thermal mismatch.
As a further improvement of the utility model, the oxide film insulating layer is obtained by adopting the micro-arc oxidation treatment on the surface of the AlSiC substrate, namely the oxide film insulating layer is a micro-arc oxide film.
As a further improvement of the present invention, the conductive film is obtained by using a thick film process.
As a further improvement of the present invention, the conductive film is a conductive metal layer obtained by a thick film method.
As a further improvement of the utility model, the conductive film is a conductive silver film.
Compared with the prior art, the beneficial effects of the utility model are that:
by adopting the technical scheme of the utility model, the material types are reduced, and the thermal stress caused by thermal mismatch is reduced; the problems of multiple material types and multiple interfaces in the traditional packaging structure are solved, the thermal resistance of the material and the thermal resistance of the interface are reduced, and the heat dissipation capability of the whole structure is improved; the welding procedures are reduced, the production cost is reduced, the process flow is simple, and the automatic production is easy to realize.
Drawings
Fig. 1 is a schematic top view of an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device according to an embodiment of the present invention.
Fig. 2 is a schematic side view of an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device according to an embodiment of the present invention.
The reference numerals include:
1-AlSiC heat dissipation substrate, 2-oxide film insulation layer, 3-conductive film.
Detailed Description
Preferred embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1 and fig. 2, an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device comprises an AlSiC substrate 1, wherein an oxide film insulation layer 2 is arranged on the surface of the AlSiC substrate 1, and a conductive film 3 is arranged on the surface of the oxide film insulation layer 2. The oxide film insulating layer 2 is obtained by performing micro-arc oxidation treatment on the surface of the AlSiC substrate 1, namely a micro-arc oxide film. The conductive film 3 is a thick film coating obtained by a thick film process.
Further, the thickness of the AlSiC substrate 1 is preferably 5mm, the thickness of the oxide film insulating layer is 20 μm, and the conductive film 3 is a conductive silver film prepared by a thick film method.
The above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to the above-mentioned embodiments, and the scope of the present invention includes and is not limited to the above-mentioned embodiments, and all equivalent changes made according to the shape and structure of the present invention are within the protection scope of the present invention.
Claims (5)
1. The utility model provides an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation which characterized in that: the conductive film comprises an AlSiC substrate, wherein an oxide film insulating layer is arranged on the surface of the AlSiC substrate, and a conductive film is printed on the surface of the oxide film insulating layer; the material of the oxide film insulating layer is AlSiC oxide.
2. The AlSiC heat dissipating and insulating integrated substrate for a heat dissipating package of a power device according to claim 1, wherein: the oxide film insulating layer is obtained by performing micro-arc oxidation treatment on the surface of the AlSiC substrate.
3. The AlSiC heat dissipating and insulating integrated substrate for a heat dissipating package of a power device according to claim 2, wherein: the conductive film is obtained by adopting a thick film process.
4. The AlSiC heat dissipation and insulation integrated substrate for the heat dissipation package of the power device as recited in claim 3, wherein: the conductive film is a conductive metal layer obtained by a thick film method.
5. The AlSiC heat dissipation and insulation integrated substrate for the heat dissipation package of the power device as claimed in any one of claims 1 to 4, wherein: the conductive film is a conductive silver film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022825897.5U CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022825897.5U CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213242534U true CN213242534U (en) | 2021-05-18 |
Family
ID=75883273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022825897.5U Active CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213242534U (en) |
-
2020
- 2020-11-30 CN CN202022825897.5U patent/CN213242534U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4610414B2 (en) | Electronic component storage package, electronic device, and electronic device mounting structure | |
| US9397017B2 (en) | Substrate structures and methods of manufacture | |
| WO2023142487A1 (en) | Packaging module and preparation method therefor, and electronic device | |
| JP4220641B2 (en) | Resin mold circuit board and electronic package | |
| JPS5987893A (en) | Circuit board, method of producing same and semiconductor device using same | |
| JP2004022973A (en) | Ceramic circuit board and semiconductor module | |
| JP5960522B2 (en) | Ceramic circuit board and electronic device using the same | |
| CN213242534U (en) | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device | |
| JP6317178B2 (en) | Circuit board and electronic device | |
| CN209169125U (en) | Encapsulating structure | |
| JP2018006377A (en) | Composite substrate, electronic device, and electronic module | |
| CN217389106U (en) | Ceramic substrate with high thermal conductivity | |
| CN220652012U (en) | TO-247-5L packaging structure based on DBC insulation heat dissipation | |
| CN210129509U (en) | Chip package, intelligent power module and air conditioner | |
| JP2005277381A (en) | Package for storing electronic component and electronic device | |
| JP4249366B2 (en) | Metal base circuit board and electronic module manufacturing method | |
| US11355419B2 (en) | Power semiconductor module | |
| CN210129500U (en) | Integrated chip, intelligent power module and air conditioner | |
| JP2000114442A (en) | Package for electronic part | |
| JP2006041231A (en) | Ceramic circuit board and electric apparatus | |
| JP2006128589A (en) | Electronic component housing package and electronic device | |
| JP2000077583A (en) | Package for electronic component and manufacture thereof | |
| JPH0529509A (en) | Board for semiconductor | |
| CN113611676A (en) | Packaging structure, manufacturing method and application of packaging structure | |
| JP4485893B2 (en) | Electronic component storage package and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |