CN210129500U - Integrated chip, intelligent power module and air conditioner - Google Patents
Integrated chip, intelligent power module and air conditioner Download PDFInfo
- Publication number
- CN210129500U CN210129500U CN201921427499.9U CN201921427499U CN210129500U CN 210129500 U CN210129500 U CN 210129500U CN 201921427499 U CN201921427499 U CN 201921427499U CN 210129500 U CN210129500 U CN 210129500U
- Authority
- CN
- China
- Prior art keywords
- aluminum
- chip
- layer
- copper oxide
- integrated chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 65
- -1 aluminum-copper oxide Chemical compound 0.000 claims abstract description 45
- 238000003466 welding Methods 0.000 claims abstract description 28
- 229910000679 solder Inorganic materials 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 38
- 230000017525 heat dissipation Effects 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 19
- 239000005751 Copper oxide Substances 0.000 claims description 19
- 229910000431 copper oxide Inorganic materials 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 22
- 238000005476 soldering Methods 0.000 abstract description 5
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 95
- 239000002356 single layer Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses an integrated chip, intelligent power module and air conditioner, this integrated chip includes: a mounting substrate; an aluminum-copper oxide solder layer disposed on the mounting substrate; and the chip is arranged on the aluminum-copper oxide welding layer. The utility model discloses aluminium-oxidation aluminum alloy that aluminium-oxidation copper layer welding material reaction generated has good thermal conductivity to can improve the radiating efficiency of chip and mounting substrate, solve when adopting soldering tin material, the problem that appears the hole easily.
Description
Technical Field
The utility model relates to an electronic circuit technical field, in particular to integrated chip, intelligent power module and air conditioner.
Background
In an integrated chip, the chip is usually soldered on a solder pad of a mounting substrate by solder, however, a solder material doped with a lead material is usually selected for a solder layer, which is not in accordance with the development requirement of lead-free semiconductor modules, and the solder easily causes problems such as holes on the mounting substrate caused by uneven solder layer, but the holes easily affect parameters such as the highest junction temperature, electrical stress and the like of the semiconductor device, and also affect the thermal stability and voltage resistance of the intelligent power module.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims at providing an integrated chip, intelligent power module and air conditioner aims at improving the radiating efficiency and the stability of chip and mounting substrate.
In order to achieve the above object, the present invention provides an integrated chip, which comprises:
a mounting substrate;
an aluminum-copper oxide solder layer disposed on the mounting substrate;
and the chip is arranged on the aluminum-copper oxide welding layer.
Optionally, the aluminum-copper oxide layer performs a self-propagating reaction to solder the chip on the aluminum-copper oxide layer.
Optionally, the aluminum-copper oxide layer includes an aluminum thin film and a copper oxide thin film, and the aluminum thin film and the copper oxide thin film are alternately disposed on the mounting substrate in sequence.
Optionally, the thickness of the aluminum thin film is 50 nm;
and/or the thickness of the copper oxide film is 50 nm.
Alternatively, the number of layers of the aluminum thin film and the copper oxide thin film is 100 in total.
Optionally, the number of the chips is multiple,
the aluminum-copper oxide welding layer is provided with a plurality of aluminum-copper oxide welding layer mounting positions on the mounting substrate, so that a plurality of chips can be welded and mounted one to one.
Optionally, the plurality of chips are one or a combination of more of IGBT chips, FRD chips, and driver chips.
Optionally, the integrated chip further includes a package housing encapsulating the mounting substrate, the al-cu oxide layer, and the chip.
The utility model also provides an intelligent power module, intelligent power module includes like above-mentioned integrated chip.
The utility model relates to an air conditioner, which comprises an electric control board and the integrated chip; the integrated chip is arranged on the electric control board;
or comprise a smart power module as described above; the intelligent power module is arranged on the electric control board.
The utility model discloses a set up the chip in treating the welding department after setting up aluminium-copper oxide layer on mounting substrate, make aluminium-copper oxide layer take place self-propagating reaction again to weld the chip on aluminium-copper oxide layer, make to form in an organic whole between chip, aluminium-copper oxide layer and the mounting substrate. Compared with the packaging mode that a single-layer insulating heat dissipation layer and a circuit wiring layer (welding pad) are sequentially formed on the substrate, the aluminum-aluminum oxide alloy generated by the reaction of the welding material of the aluminum-copper oxide welding layer has good heat conductivity, so that the heat dissipation efficiency of the chip and the mounting substrate can be improved, and the problem that holes are easy to appear when a soldering material is adopted is solved. The influence of parameters such as the highest junction temperature and the electrical stress of the semiconductor device can be reduced, the thermal stability and the voltage resistance of the intelligent power module are improved, and the phenomenon that the chip fails or is damaged due to the fact that the insulation resistance is reduced due to the fact that the chip works for a long time or under some extreme conditions is prevented. And the aluminum-copper oxide welding layer is lead-free, so that the energy is saved and the environment is protected. Furthermore, the utility model discloses the welding mode is simple, convenient, and the error that manual operation leads to is less to the welding mouth that connects of chip and mounting substrate levels, is favorable to diffusing the heat that produces the chip to the mounting substrate on through the insulating heat dissipation layer that aluminium-oxidation copper brazing layer formed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of an integrated chip according to the present invention;
fig. 2 is a schematic structural diagram of an embodiment of the integrated chip of the present invention;
fig. 3 is a schematic diagram of an embodiment of the present invention in which an ic is applied to an intelligent power module.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
30 | Chip and method for manufacturing the same |
| 20 | Aluminum-copper |
40 | Packaging shell |
| 21 | Aluminum thin film | 50 | Pin |
| 22 | Film of |
60 | Heat radiator |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The utility model provides an integrated chip is applicable to in intelligent power module's the encapsulation.
An intelligent Power module (ipm) is a Power driving product combining Power electronics and integrated circuit technology, and is widely applied to electric control boards of devices in the fields of driving fans, compressors, rail transit, smart grids, aerospace, electric vehicles, new energy equipment and the like. Currently, most of the smart power modules integrate a power device, a driving circuit, an MCU, etc. on a mounting substrate 10. The IGBT/FRD chip is used as a core device for energy conversion and transmission of the IPM, when the IGBT/FRD chip is pasted on the mounting substrate 10, a solder layer is usually fixed on a ceramic copper-clad plate, and the solder layer is usually made of a solder material doped with a lead material, however, the solder layer is not in accordance with the lead-free development requirement of a semiconductor module, and the solder easily causes the problems of holes and the like on the mounting substrate 10 caused by uneven solder layer, but the holes easily affect the parameters of the semiconductor device such as the highest junction temperature, the electrical stress and the like, and also affect the thermal stability and the pressure resistance of the intelligent power module.
In order to solve the above problem, referring to fig. 1, in an embodiment of the present invention, the integrated chip includes:
a mounting substrate 10;
an aluminum-copper oxide layer 20 disposed on the mounting substrate 10;
and the chip 30 is arranged on the aluminum-copper oxide welding layer 20.
In the present embodiment, the mounting substrate 10 may be one of a PCB mounting substrate 10, an aluminum mounting substrate 10, or a DBC mounting substrate 10.
In fabricating the al-cu oxide layer 20, the physical vapor deposition method, such as ion beam deposition, pulsed laser deposition, filtered cathode vacuum arc method, magnetron sputtering, etc., may be used to sputter particles of al and cu oxide as target materials, the sputtered target material particles move to the mounting substrate 10, and the al particles and cu oxide particles deposited on the mounting substrate 10 are continuously agglomerated, nucleated, and grown to finally form the al thin film 21 and the cu oxide thin film 22. Specifically, the aluminum thin film 21 and the copper oxide thin film 22 are alternately deposited on the mounting substrate 10 in sequence, that is, after a layer of the aluminum thin film 21 is formed on the mounting substrate 10 by a magnetron sputtering method, etc., a layer of the copper oxide thin film 22 is formed on the aluminum thin film 21, a layer of the aluminum thin film 21 is formed on the copper oxide thin film 22, and so on, a plurality of layers of the aluminum thin films 21 and the copper oxide thin films 22 are alternately deposited on the mounting substrate 10, and finally the aluminum-copper oxide welding layer 20 of the embodiment is formed.
The chip 30 may be one or a combination of more than one of the IGBT chip 30, the FRD chip 30, and the driving chip 30, and of course, in other embodiments, the chip 30 may also be another semiconductor chip 30, or the control chip 30, etc. In this embodiment, a single chip 30 may be packaged, or multiple chips 30 may be integrally packaged, for example, a wafer of a single IGBT chip 30 is packaged to form an IGBT single body, or the IGBT chip 30, the FRD chip 30, the driver chip 30, and the like are integrated in one package to form an integrated chip 30 of the intelligent power module, where the number of the integrated chips may be specifically set according to actual applications, and is not limited herein.
After the aluminum-copper oxide layer 20 is deposited on the mounting substrate 10, the chip 30 to be packaged may be placed on the aluminum-copper oxide layer 20, and then a small laser pulse or a small current pulse is applied to the region where the chip 30 is disposed, so that the aluminum-copper oxide layer 20 performs a self-propagating reaction to form an aluminum oxide-copper mixed layer, and then the chip 30 is welded on the aluminum-copper oxide layer 20. In the present embodiment, the chip 30 can be soldered on the mounting substrate 10 without solder paste or other soldering material, so that the chip 30, the al-cu oxide layer 20 and the mounting substrate 10 are integrated.
The utility model discloses a set up aluminium-copper oxide layer 20 back on mounting substrate 10, set up chip 30 in treating the welding department, make aluminium-copper oxide layer 20 take place the reaction of stretching certainly again, thereby weld chip 30 on aluminium-copper oxide layer 20, make chip 30, aluminium-copper oxide layer 20 and mounting substrate 10 between form in an organic whole, compare in the encapsulation mode that forms individual layer insulating heat dissipation layer and circuit wiring layer (pad) on the base plate in proper order, the utility model discloses copper-aluminum oxide alloy that 20 welding material of aluminium-copper oxide layer reaction generated has good thermal conductivity, thereby can improve the radiating efficiency of chip 30 and mounting substrate 10. The utility model discloses can solve when adopting the soldering tin material, the problem of hole appears easily to reduce semiconductor device's the influence of the highest junction temperature, electric stress isoparametric, can improve intelligent power module's thermal stability performance and compressive property, prevent that chip 30 from working for a long time or under some extreme conditions, high temperature makes insulation resistance descend, leads to chip 30 to become invalid or damage. And the aluminum-copper oxide welding layer is lead-free, so that the energy is saved and the environment is protected. Furthermore, the utility model discloses the welding mode is simple, convenient, and the error that manual operation leads to is less to the welding mouth that connects of chip 30 and mounting substrate 10 is leveled, is favorable to diffusing the heat that produces the chip 30 to mounting substrate 10 on through the insulating heat dissipation layer that aluminium-copper oxide layer 20 formed.
Referring to fig. 1 or 2, in an embodiment, the aluminum thin film 21 has a thickness of 50 nm;
and/or the thickness of the copper oxide film 22 is 50 nm.
In this embodiment, the thickness between the single-layer aluminum thin film 21 and the single-layer copper oxide thin film 22 is 50nm, and the thin films prepared by the physical vapor product method such as magnetron sputtering have an interlayer area in close contact, so that the single-layer aluminum thin film 21 and the single-layer copper oxide thin film 22 are in close contact, and the aluminum-copper oxide welding layer 20 can be well prepared.
Referring to fig. 1 or 2, in one embodiment, the number of layers of the aluminum thin film 21 and the copper oxide thin film 22 is 100 in total.
In this embodiment, the total number of layers of the single-layer aluminum thin film 21 and the single-layer copper oxide thin film 22 is 100, which may be specifically set according to the insulation performance requirement and the heat conduction performance of the chip 30, and in some embodiments, the total number of layers of the single-layer aluminum thin film 21 and the single-layer copper oxide thin film 22 may also be set to other values according to the difference of the chip 30, which is not limited herein.
Referring to fig. 3, the al-cu layer 20 is provided with a plurality of al-cu layer 20 mounting locations on the mounting substrate 10 for one-to-one soldering of a plurality of chips 30;
the plurality of chips 30 are one or a combination of more of IGBT chips 30, FRD chips 30, and driver chips 30.
In this embodiment, a plurality of, for example, four or six IGBT chips 30 and FRD chips 30 may be integrated into one integrated chip 30 to form an inverter circuit, or the IGBT chip 30, the FRD chip 30, and the driver chip 30 may be integrated into one integrated chip 30 to form an intelligent power module, and in some embodiments, the main control chip 30 may also be integrated into the intelligent power module. Or the intelligent power module for driving the compressor to work, the intelligent power module for driving the fan to work, and the like can be integrated in one integrated chip 30 to form a high-integration intelligent power module. Of course, in other embodiments, different integrated chips 30 may be integrated according to the functional requirements, or a single driving chip 30, a single main control chip 30, and the like are packaged into a single chip 30, which may be specifically set according to the actual requirements, and is not limited herein.
Referring to fig. 2 or fig. 3, in an embodiment, the mounting substrate 10 is a ceramic copper-clad plate, the ceramic copper-clad plate includes a circuit wiring layer and an insulating heat dissipation layer, and the circuit wiring layer is disposed on the insulating heat dissipation layer;
the chip is disposed on the circuit wiring layer.
In this embodiment, when the mounting substrate 10 is implemented by using a ceramic copper-clad plate, the ceramic copper-clad plate includes an insulating heat dissipation layer, a circuit wiring layer formed on the insulating heat dissipation layer, and a metal heat dissipation layer disposed on the other side of the insulating heat dissipation layer, where the insulating heat dissipation layer is a ceramic layer. The insulating heat dissipation layer is clamped between the circuit wiring layer and the metal heat dissipation layer. The insulating heat dissipation layer is used for realizing electrical isolation and electromagnetic shielding between the circuit wiring layer and the metal heat dissipation layer and reflecting external electromagnetic interference, so that the power switch tube is prevented from being interfered by external electromagnetic radiation to normally work, and the interference influence of the electromagnetic radiation in the surrounding environment on electronic elements in the intelligent power module is reduced.
In some embodiments, the mounting substrate 10 may also be implemented by using a metal material such as aluminum or aluminum alloy, copper or copper alloy, the insulating heat dissipation layer may be made of a material such as thermoplastic glue or thermosetting glue, a copper-clad layer is disposed on the insulating heat dissipation layer to form a circuit wiring layer, and the mounting substrate 10 and the circuit wiring layer are fixedly connected and insulated by an insulating layer. When the mounting substrate 10 of the present embodiment is implemented by using a ceramic copper-clad layer, an aluminum alloy, or a copper alloy, a mixed material of copper and aluminum oxide generated by a reaction of an aluminum-copper oxide multilayer film welding material is the same as a copper-clad substrate material, and the thermal expansion coefficients are the same, so that the occurrence of problems such as deformation and fracture due to high temperature can be avoided, and the thermal stability and the pressure resistance can be improved.
In the above embodiment, the aluminum-copper oxide layer 20 may be formed on the circuit wiring layer, and the chips 30 are integrated on the circuit wiring layer through the aluminum-copper oxide layer 20, and metal leads may pass between the chips 30.
The utility model also provides an intelligent power module, intelligent power module includes as above integrated chip.
In this embodiment, the integrated chip is an integrated chip of the intelligent power module, and in the integrated chip 30, chip 30 wafers for realizing functions of the intelligent power module, such as the IGBT chip 30, the FRD chip 30, and the driver chip 30, are integrated, and the chip 30 wafers are integrated in one integrated chip 30, so as to form the intelligent power module.
Referring to fig. 2 or fig. 3, in an embodiment, the smart power module further includes a package housing 40, and the mounting substrate 10, the al-cu layer 20 and the chip 30 are packaged in the package housing.
In this embodiment, the package housing 40 may be made of epoxy resin, aluminum oxide, and a heat conductive filling material, wherein the heat conductive filling material may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the heat conductivity is higher, and the heat resistance and the heat conductivity are better, so that the aluminum nitride and the boron nitride have higher heat transfer capability. When the package housing 40 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride or aluminum nitride can be mixed, and then the mixed package material is heated; after cooling, the packaging material is crushed, the packaging shell 40 material is rolled and formed by an ingot particle forming process to form the packaging shell 40, and the temperature sensor is fixed on one side of the packaging shell 40 close to the power component in a mounting, embedding and other modes. The circuit wiring layer 12, the aluminum substrate, the driver chip 30, and the power switch tube are packaged in the package case 40.
In the integrated chip, the package housing 40 may be disposed on the mounting substrate 10 and the power module 20 in a covering manner. So that the lower surface of the mounting substrate 10 is exposed outside the package to accelerate heat dissipation of the power element. When the integrated chip is applied to an intelligent power module, the intelligent power module may further be provided with a heat sink 60 for dissipating heat of the power switch tube, and the package housing 40 may be wrapped around the mounting substrate 10 and the power component 20, so that the power switch tube, the mounting substrate 10 and the driving chip 30 are integrally formed.
Referring to fig. 2 or fig. 3, in an embodiment, the smart power module further includes a pin 50, the pin 50 is disposed on the circuit wiring layer, and the pin is electrically connected to the chip 30 through a metal wire.
In this embodiment, the pin 50 may be implemented by a gull-wing pin 50 or a straight pin 50, and in this embodiment, preferably, the straight pin 50 is soldered on the low thermal conductive insulating substrate, and the pin 50 is electrically connected to the power switch tube and the driving chip 30 through metal wires at a pad position on the mounting position corresponding to the circuit wiring layer 12.
Referring to fig. 3, in an embodiment, the smart power module further includes a heat sink 60, and the heat sink 60 is disposed on a side of the mounting substrate 10 facing away from the power component.
In this embodiment, the heat sink 60 may be made of high thermal conductive material with good heat dissipation effect such as aluminum, aluminum alloy, etc., so that the heat generated by the chip 30 is conducted to the heat sink 60 through the mounting substrate 10, thereby further increasing the contact area between the heat generated by the power switch tube and the air and increasing the heat dissipation rate. The heat sink 60 may further include a heat sink 60 body and a plurality of heat dissipating fins disposed at one side of the heat sink 60 body at intervals. With such an arrangement, the contact area between the heat sink 60 and the air can be increased, that is, the contact area between the heat on the heat sink 60 and the air can be increased when the heat sink 60 operates, so as to increase the heat dissipation rate of the heat sink 60. Meanwhile, the material of the radiator 60 can be reduced, and the problem that the cost is too high due to too much material application of the radiating fins is avoided.
It can be understood that, in the embodiment, after the aluminum-copper oxide solder layer 20 is disposed on the mounting substrate 10, the chip 30 is disposed at the position to be welded, and then the aluminum-copper oxide solder layer 20 is subjected to a self-propagating reaction, so that the chip 30 is welded on the aluminum-copper oxide solder layer 20, the welding method is simple and convenient, and the error caused by manual operation is small, and the welding interface between the chip 30 and the mounting substrate 10 is flat, and the welding interface between the chip and the mounting substrate 10 is flat, which is beneficial to thermal diffusion, and can reduce the generation of holes, thereby reducing the influence of parameters such as the highest junction temperature, electrical stress and the like of the semiconductor device, and improving the thermal stability and pressure resistance of the intelligent power module. The heat generated by the chip 30 is diffused to the mounting substrate 10 through the insulating pad layer formed by the aluminum-copper oxide layer 20, and then is dissipated through the heat sink 60, so that the heat dissipation effect of the chip 30 can be improved.
The utility model discloses still provide an air conditioner, include as above integrated chip, the air conditioner includes as above intelligent power module and integrated chip. The detailed structure of the intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the utility model discloses used above-mentioned intelligent power module and integrated chip in the air conditioner, consequently, the utility model discloses the embodiment of air conditioner includes all technical scheme of the whole embodiments of above-mentioned intelligent power module and integrated chip, and the technological effect that reaches is also identical, no longer gives unnecessary details here.
In practical application, the air conditioner further comprises an electric control board, the integrated chip and the intelligent power module are arranged on the electric control board and are electrically connected with electronic elements on the electric control board through circuit wiring.
The above is only the optional embodiment of the present invention, and not therefore the limit of the patent scope of the present invention, all of which are in the concept of the present invention, the equivalent structure transformation of the content of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.
Claims (10)
1. An integrated chip, comprising:
a mounting substrate;
an aluminum-copper oxide solder layer disposed on the mounting substrate;
and the chip is arranged on the aluminum-copper oxide welding layer.
2. The integrated chip of claim 1, wherein the aluminum-copper oxide layer bonds the chip to the aluminum-copper oxide layer by a self-propagating reaction.
3. The integrated chip of claim 1, wherein the aluminum-copper oxide layer comprises aluminum thin films and copper oxide thin films, and the aluminum thin films and the copper oxide thin films are alternately stacked in sequence on the mounting substrate.
4. The integrated chip of claim 3, wherein the aluminum thin film has a thickness of 50 nm;
and/or the thickness of the copper oxide film is 50 nm.
5. The integrated chip of claim 3, wherein the number of layers of the aluminum thin film and the copper oxide thin film total 100.
6. The integrated chip of claim 1, wherein the number of chips is plural,
the aluminum-copper oxide welding layer is provided with a plurality of aluminum-copper oxide welding layer mounting positions on the mounting substrate, so that a plurality of chips can be welded and mounted one to one.
7. The integrated chip of claim 6, wherein a plurality of the chips are one or more combinations of IGBT chips, FRD chips, and driver chips.
8. The integrated chip according to any one of claims 1 to 7, wherein the mounting substrate is a ceramic copper clad laminate, the ceramic copper clad laminate comprises a circuit wiring layer and an insulating heat dissipation layer, and the circuit wiring layer is arranged on the insulating heat dissipation layer;
the chip is disposed on the circuit wiring layer.
9. An intelligent power module, characterized in that it comprises an integrated chip according to any one of claims 1 to 8.
10. An air conditioner, characterized in that, it comprises an electric control board and an integrated chip as claimed in any one of claims 1 to 8; the integrated chip is arranged on the electric control board;
or comprising the smart power module of claim 9; the intelligent power module is arranged on the electric control board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921427499.9U CN210129500U (en) | 2019-08-28 | 2019-08-28 | Integrated chip, intelligent power module and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921427499.9U CN210129500U (en) | 2019-08-28 | 2019-08-28 | Integrated chip, intelligent power module and air conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210129500U true CN210129500U (en) | 2020-03-06 |
Family
ID=69665929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921427499.9U Expired - Fee Related CN210129500U (en) | 2019-08-28 | 2019-08-28 | Integrated chip, intelligent power module and air conditioner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210129500U (en) |
-
2019
- 2019-08-28 CN CN201921427499.9U patent/CN210129500U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5365627B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
| CN102593081B (en) | Comprise the semiconductor device of radiator | |
| EP1768243B1 (en) | Inverter device | |
| CN108133915A (en) | Power device is built-in and power modules of two-side radiation and preparation method thereof | |
| KR102228945B1 (en) | Semiconductor package and method of fabricating the same | |
| JP5971333B2 (en) | Power converter | |
| EP4047645A1 (en) | Power device, power device assembly, and related apparatus | |
| CN114743947B (en) | TO-form-based power device packaging structure and packaging method | |
| CN113130455A (en) | Multi-unit power integrated module with high thermal reliability and processing technology thereof | |
| CN111696936A (en) | Power module of integrated radiator and manufacturing method thereof | |
| CN113782504B (en) | Simplified packaging structure of power module of integrated radiator and manufacturing method | |
| CN110268520A (en) | Method for integrated power chip and the busbar for forming radiator | |
| TW200423345A (en) | Thermal-conductive substrate package | |
| CN220652012U (en) | TO-247-5L packaging structure based on DBC insulation heat dissipation | |
| CN108054148A (en) | Intelligent power module and its manufacturing method, air conditioner | |
| CN210129500U (en) | Integrated chip, intelligent power module and air conditioner | |
| CN113838821A (en) | Heat dissipation member for SiC planar packaging structure and preparation method thereof | |
| CN211267530U (en) | Intelligent power module and air conditioner | |
| CN210607234U (en) | Integrated chip, intelligent power module and air conditioner | |
| CN112038245B (en) | Connection process of internal binding line of power module | |
| US20220208661A1 (en) | Qfn/qfp package with insulated top-side thermal pad | |
| CN114899161A (en) | Module and manufacturing method thereof | |
| EP4016618A1 (en) | Power device packaging | |
| CN210129509U (en) | Chip package, intelligent power module and air conditioner | |
| CN210129502U (en) | Integrated chip, intelligent power module and air conditioner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230118 Address after: 400064 plant 1, No. 70, Meijia Road, Nan'an District, Chongqing Patentee after: Meiken Semiconductor Technology Co.,Ltd. Address before: 528311 Lingang Road, Beijiao Town, Shunde District, Foshan, Guangdong Patentee before: GD MIDEA AIR-CONDITIONING EQUIPMENT Co.,Ltd. Patentee before: MIDEA GROUP Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200306 |