CN210607234U - Integrated chip, intelligent power module and air conditioner - Google Patents
Integrated chip, intelligent power module and air conditioner Download PDFInfo
- Publication number
- CN210607234U CN210607234U CN201920914958.XU CN201920914958U CN210607234U CN 210607234 U CN210607234 U CN 210607234U CN 201920914958 U CN201920914958 U CN 201920914958U CN 210607234 U CN210607234 U CN 210607234U
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- chip
- aluminum
- titanium
- mounting substrate
- integrated chip
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- 239000000758 substrate Substances 0.000 claims abstract description 78
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 61
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000010936 titanium Substances 0.000 claims abstract description 56
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 46
- 239000010409 thin film Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 abstract description 19
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 abstract description 16
- 229910001069 Ti alloy Inorganic materials 0.000 abstract description 3
- 238000010292 electrical insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 46
- 230000017525 heat dissipation Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000002356 single layer Substances 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- 230000009466 transformation Effects 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses an integrated chip, intelligent power module and air conditioner, this integrated chip includes: a mounting substrate; an aluminum/titanium multilayer film provided on the mounting substrate; and the chip is arranged on the aluminum/titanium multilayer film. The utility model discloses the aluminium titanium alloy that aluminium titanium multilayer film welding material reaction generated has good thermal conductivity and electrical insulation to can improve the radiating efficiency and the insulating nature of chip and mounting substrate.
Description
Technical Field
The utility model relates to an electronic circuit technical field, in particular to integrated chip, intelligent power module and air conditioner.
Background
In an integrated chip, a chip is usually soldered on a pad of a mounting substrate, however, since the temperature is high or there are many solders during the soldering of the chip, a large number of small black dots and small solder bumps are easily formed on a non-soldering surface of the mounting substrate, which may seriously affect the heat dissipation effect and the insulation effect of the mounting substrate for chip mounting.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an integrated chip, intelligent power module and air conditioner, aim at improving the radiating efficiency and the insulating nature of chip and mounting substrate.
In order to achieve the above object, the present invention provides an integrated chip, which comprises:
a mounting substrate;
an aluminum/titanium multilayer film provided on the mounting substrate;
and the chip is arranged on the aluminum/titanium multilayer film.
Optionally, the aluminum/titanium multilayer film undergoes a self-propagating reaction to solder the chip to the aluminum/titanium multilayer film.
Optionally, the aluminum/titanium multilayer thin film includes an aluminum thin film and a titanium thin film, and the aluminum thin film and the titanium thin film are alternately disposed on the mounting substrate in sequence.
Optionally, the aluminum thin film has a thickness of 25 nm;
and/or the thickness of the titanium thin film is 25 nm.
Optionally, the number of layers of the aluminum thin film and the titanium thin film is 50 in total.
Optionally, the number of the chips is multiple,
the aluminum/titanium multilayer film is provided with a plurality of aluminum/titanium multilayer film mounting positions on the mounting substrate so as to be used for one-to-one welding mounting of a plurality of chips.
Optionally, the plurality of chips are one or a combination of more of IGBT chips, FRD chips, and driver chips.
Optionally, the integrated chip further includes a package casing for packaging the mounting substrate, the aluminum/titanium multilayer film, and the chip.
The utility model also provides an intelligent power module, intelligent power module includes like above-mentioned integrated chip.
The utility model relates to an air conditioner, which comprises an electric control board and the integrated chip; the integrated chip is arranged on the electric control board;
or comprise a smart power module as described above; the intelligent power module is arranged on the electric control board.
The utility model discloses a set up back on aluminium titanium multilayer film on mounting substrate, set up the chip in treating the welding department, make aluminium titanium multilayer film take place from spreading the reaction again, thereby weld the chip on aluminium titanium multilayer film, make the chip, form in an organic whole between aluminium titanium multilayer film and the mounting substrate, compare in the packaging mode that forms individual layer insulating layer and circuit wiring layer (pad) on the base plate in proper order, the utility model discloses can solve defect that exists among the individual layer structure, gap etc. and make the chip length under time work or some extreme conditions, high temperature makes insulation resistance descend, leads to the problem that the chip became invalid or damaged. Furthermore, the utility model discloses the welding mode is simple, convenient, and the error that manual operation leads to is less to the welding mouth that connects of chip and mounting substrate levels, is favorable to diffusing the heat that produces the chip to the mounting substrate on through the insulating heat dissipation layer that aluminium titanium multilayer film formed. The utility model discloses the aluminium titanium alloy that aluminium titanium multilayer film welding material reaction generated has good thermal conductivity and electrical insulation to can improve the radiating efficiency and the insulating nature of chip and mounting substrate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of an integrated chip according to the present invention;
fig. 2 is a schematic structural diagram of an embodiment of the integrated chip of the present invention;
fig. 3 is a schematic diagram of an embodiment of the present invention in which an ic is applied to an intelligent power module.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
30 | Chip and method for manufacturing the same |
| 20 | Aluminum/ |
40 | Packaging shell |
| 21 | Aluminum |
50 | |
| 22 | Titanium thin film | 60 | Heat radiator |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The utility model provides an integrated chip is applicable to in intelligent power module's the encapsulation.
An intelligent Power module (ipm) is a Power driving product combining Power electronics and integrated circuit technology, and is widely applied to electric control boards of devices in the fields of driving fans, compressors, rail transit, smart grids, aerospace, electric vehicles, new energy equipment and the like. Currently, most of the smart power modules integrate a power device, a driving circuit, an MCU, and the like on a mounting substrate. The IGBT/FRD chip is used as a core device for energy conversion and transmission of IPM, when the IGBT/FRD chip is pasted on a mounting substrate, protective gas is generally required to be introduced, and the non-welding surface of an IGBT base plate is required to be contacted with a radiator.
In order to solve the above problem, referring to fig. 1, in an embodiment of the present invention, the integrated chip includes:
a mounting substrate 10;
an aluminum/titanium multilayer thin film 20 provided on the mounting substrate 10;
and a chip 30 disposed on the aluminum/titanium multilayer film 20.
In the present embodiment, the mounting substrate 10 may be one of a DRC mounting substrate 10, a PCB mounting substrate 10, an aluminum mounting substrate 10, or a DBC mounting substrate 10.
In the production of the aluminum/titanium multilayer film 20, aluminum and titanium are sputtered as target materials by a physical vapor deposition method, such as an ion beam deposition method, a pulsed laser deposition method, a filtered cathode vacuum arc method, a magnetron sputtering method, etc., the sputtered target material particles move to the mounting substrate 10, and the aluminum particles and the titanium particles deposited on the mounting substrate 10 are continuously agglomerated, nucleated, and grown to finally form the aluminum film 21 and the titanium film 22. Specifically, the aluminum thin film 21 and the titanium thin film 22 are alternately deposited on the mounting substrate 10 in sequence, that is, a magnetron sputtering method or the like may be adopted to form a layer of aluminum thin film 21 on the mounting substrate 10, then a layer of titanium thin film 22 is formed on the aluminum thin film 21, then a layer of aluminum thin film 21 is formed on the titanium thin film 22, and so on, and a plurality of layers of aluminum thin films 21 and titanium thin films 22 are alternately deposited on the mounting substrate 10, so as to finally form the aluminum/titanium multilayer thin film 20 of the present embodiment.
The chip 30 may be one or a combination of more than one of the IGBT chip 30, the FRD chip 30, and the driving chip 30, and of course, in other embodiments, the chip 30 may also be another semiconductor chip 30, or the control chip 30, etc. In this embodiment, a single chip 30 may be packaged, or multiple chips 30 may be integrally packaged, for example, a wafer of a single IGBT chip 30 is packaged to form an IGBT single body, or the IGBT chip 30, the FRD chip 30, the driver chip 30, and the like are integrated in one package to form the smart power module integrated chip 30, where the number of the integrated chips may be specifically set according to practical applications, and is not limited herein.
After the al/ti multilayer thin film 20 is deposited on the mounting substrate 10, the chip 30 to be packaged may be placed on the al/ti multilayer thin film 20, and then a small laser pulse or a small current pulse is applied to the region where the chip 30 is disposed, so that the al/ti multilayer thin film 20 undergoes a self-propagating reaction to form an al/ti multilayer thin film 20 intermetallic compound, and then the chip 30 is soldered on the al/ti multilayer thin film 20. In this embodiment, the chip 30 can be soldered to the mounting substrate 10 without using a solder material such as solder paste, so that the chip 30, the aluminum/titanium multilayer film 20, and the mounting substrate 10 are integrated.
The utility model discloses a set up aluminium titanium multilayer film 20 back on mounting substrate 10, set up chip 30 in treating the welding department, make aluminium titanium multilayer film 20 take place from spreading the reaction again, thereby weld chip 30 on aluminium titanium multilayer film 20, make chip 30, aluminium titanium multilayer film 20 and mounting substrate 10 between form in an organic whole, compare in the packaging mode that forms individual layer insulating layer and circuit wiring layer (pad) on the base plate in proper order, the utility model discloses can solve defect that exists among the individual layer structure, gap etc. make chip 30 length under time work or some extreme condition, high temperature makes insulation resistance descend, leads to the problem that chip 30 became invalid or damaged. Furthermore, the utility model discloses the welding mode is simple, convenient, and the error that manual operation leads to is less to the welding mouth that connects of chip 30 and mounting substrate 10 levels, is favorable to diffusing the heat that produces the chip 30 to mounting substrate 10 on through the insulating heat dissipation layer that aluminium titanium multilayer film 20 formed. The utility model discloses the aluminium titanium alloy that aluminium titanium multilayer film 20 welding material reaction generated has good thermal conductivity and electrical insulation to can improve the radiating efficiency and the insulating nature of chip 30 and mounting substrate 10.
Referring to fig. 1 or 2, in an embodiment, the aluminum thin film 21 has a thickness of 25 nm;
and/or the thickness of the titanium thin film 22 is 25 nm.
In this embodiment, the thickness between the single-layer aluminum thin film 21 and the single-layer titanium thin film 22 is 25nm, and the thin films prepared by the physical vapor product method such as magnetron sputtering have a close contact interlayer area, so that the single-layer aluminum thin film 21 and the single-layer titanium thin film 22 are in close contact, and the aluminum/titanium multilayer thin film 20 can be preferably prepared.
Referring to fig. 1 or 2, in one embodiment, the number of layers of the aluminum thin film 21 and the titanium thin film 22 is 50 in total.
In this embodiment, the total number of layers of the single-layer aluminum thin film 21 and the single-layer titanium thin film 22 is 50, which may be specifically set according to the insulation performance requirement and the heat conduction performance of the chip 30, and in some embodiments, the total number of layers of the single-layer aluminum thin film 21 and the single-layer titanium thin film 22 may also be set to other values according to different chips 30, which is not limited herein.
Referring to fig. 3, the aluminum/titanium multilayer film 20 is provided with a plurality of aluminum/titanium multilayer film 20 mounting sites on the mounting substrate 10 for one-to-one soldering mounting of a plurality of chips 30;
the plurality of chips 30 are one or a combination of more of IGBT chips 30, FRD chips 30, and driver chips 30.
In this embodiment, a plurality of, for example, four or six IGBT chips 30 and FRD chips 30 may be integrated into one integrated chip 30 to form an inverter circuit, or the IGBT chip 30, the FRD chip 30, and the driver chip 30 may be integrated into one integrated chip 30 to form an intelligent power module, and in some embodiments, the main control chip 30 may also be integrated into the intelligent power module. Or the intelligent power module for driving the compressor to work, the intelligent power module for driving the fan to work, and the like can be integrated in one integrated chip 30 to form a high-integration intelligent power module. Of course, in other embodiments, different integrated chips 30 may be integrated according to the functional requirements, or a single driving chip 30, a single main control chip 30, and the like are packaged into a single chip 30, which may be specifically set according to the actual requirements, and is not limited herein.
Referring to fig. 2 or 3, in an embodiment, the mounting substrate 10 includes a heat dissipation substrate (not shown) and a circuit wiring layer (not shown), the circuit wiring layer is formed on the heat dissipation substrate, and a plurality of chips 30 are electrically connected to the circuit wiring layer through metal leads.
In this embodiment, when the heat dissipation substrate is implemented by using an aluminum nitride ceramic substrate, the aluminum nitride ceramic substrate includes an insulating heat dissipation layer and a circuit wiring layer formed on the insulating heat dissipation layer. When the substrate made of metal material is adopted, the substrate comprises a metal heat dissipation layer, an insulating layer laid on the metal heat dissipation layer and a circuit wiring layer formed on the insulating layer. In the present embodiment, the mounting substrate 10 may be selected as a single-sided wiring board. The insulating layer is clamped between the circuit wiring layer and the metal heat dissipation substrate. The insulating layer 50 is used for realizing electrical isolation and electromagnetic shielding between the circuit wiring layer 30 and the metal heat dissipation substrate, and reflecting external electromagnetic interference, so that the power switch tube is prevented from being interfered by external electromagnetic radiation to work normally, and the interference influence of the electromagnetic radiation in the surrounding environment on electronic elements in the intelligent power module is reduced.
In some embodiments, the heat dissipation substrate may further include an insulating layer disposed thereon according to a material of the heat dissipation substrate, for example, when the heat dissipation substrate is implemented by using a material with a conductive property, such as an aluminum material or a copper material, the insulating layer may be made of a material, such as a thermoplastic adhesive or a thermosetting adhesive, so as to implement a fixed connection and insulation between the heat dissipation substrate and the circuit wiring layer. The insulating layer can be realized by a high-heat-conductivity insulating layer which is realized by mixing one or more materials of epoxy resin, aluminum oxide and high-heat-conductivity filling material. The circuit wiring layer forms corresponding lines and corresponding mounting sites for mounting the chip 30, i.e., regions for forming the aluminum/titanium multilayer thin film 20, on the mounting substrate 10 according to the circuit design of the smart power module.
In the above embodiment, the aluminum/titanium multilayer film 20 may be formed on the circuit wiring layer, the chips 30 are integrated on the circuit wiring layer through the aluminum/titanium multilayer film 20, and the chips 30 may be electrically connected through the circuit wiring layer and the metal leads, or the chips 30 may be electrically connected directly through the metal leads.
Referring to fig. 2 or 3, in an embodiment, the integrated chip further includes a package housing 40 for encapsulating the mounting substrate 10, the al/ti multilayer film 20, and the chip 30.
In this embodiment, the package housing 40 may be made of epoxy resin, aluminum oxide, and a heat conductive filling material, wherein the heat conductive filling material may be boron nitride or aluminum nitride, and the insulation property of aluminum nitride and boron nitride is better, and the heat conductivity is higher, and the heat resistance and the heat conductivity are better, so that the aluminum nitride and the boron nitride have higher heat transfer capability. When the package housing 40 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride or aluminum nitride can be mixed, and then the mixed package material is heated; after cooling, the packaging material is crushed, the packaging shell 40 material is rolled and formed by an ingot particle forming process to form the packaging shell 40, and the temperature sensor is fixed on one side of the packaging shell 40 close to the power component in a mounting, embedding and other modes. The circuit wiring layer 12, the aluminum substrate, the driver chip 30, and the power switch tube are packaged in the package case 40.
In the integrated chip, the package housing 40 may be disposed on the mounting substrate 10 and the power module 20 in a covering manner. So that the lower surface of the mounting substrate 10 is exposed outside the package to accelerate heat dissipation of the power element. When the integrated chip is applied to an intelligent power module, the intelligent power module may further be provided with a heat sink 60 for dissipating heat of the power switch tube, and the package housing 40 may be wrapped around the mounting substrate 10 and the power component 20, so that the power switch tube, the mounting substrate 10 and the driving chip 30 are integrally formed.
Referring to fig. 2 or fig. 3, in an embodiment, the smart power module further includes a pin 50, the pin 50 is disposed on the circuit wiring layer, and the pin is electrically connected to the chip 30 through a metal wire.
In this embodiment, the pin 50 may be implemented by a gull-wing pin 50 or a straight pin 50, and in this embodiment, preferably, the straight pin 50 is soldered on the low thermal conductive insulating substrate, and the pin 50 is electrically connected to the power switch tube and the driving chip 30 through metal wires at a pad position on the mounting position corresponding to the circuit wiring layer 12.
The utility model also provides an intelligent power module, intelligent power module includes as above integrated chip.
In this embodiment, the integrated chip is an integrated chip of the intelligent power module, and in the integrated chip 30, chip 30 wafers for realizing the functions of the intelligent power module, such as the IGBT chip 30, the FRD chip 30, and the driver chip 30, are integrated, and the chip 30 wafers are integrated in one integrated chip 30, so as to form the intelligent power module.
Referring to fig. 3, in an embodiment, the smart power module further includes a heat sink 60, and the heat sink 60 is disposed on a side of the mounting substrate 10 facing away from the power component.
In this embodiment, the heat sink 60 may be made of high thermal conductive material with good heat dissipation effect such as aluminum, aluminum alloy, etc., so that the heat generated by the chip 30 is conducted to the heat sink 60 through the mounting substrate 10, thereby further increasing the contact area between the heat generated by the power switch tube and the air and increasing the heat dissipation rate. The heat sink 60 may further include a heat sink 60 body and a plurality of heat dissipating fins disposed at one side of the heat sink 60 body at intervals. With such an arrangement, the contact area between the heat sink 60 and the air can be increased, that is, the contact area between the heat on the heat sink 60 and the air can be increased when the heat sink 60 operates, so as to increase the heat dissipation rate of the heat sink 60. Meanwhile, the material of the radiator 60 can be reduced, and the problem that the cost is too high due to too much material application of the radiating fins is avoided.
It can be understood that, in the embodiment, after the aluminum/titanium multilayer film 20 is disposed on the mounting substrate 10, the chip 30 is disposed at a position to be welded, and then the aluminum/titanium multilayer film 20 is subjected to a self-propagating reaction, so that the chip 30 is welded on the aluminum/titanium multilayer film 20, the welding method is simple and convenient, and an error caused by a manual operation is small, and a welding opening where the chip 30 and the mounting substrate 10 are welded is flat, so that a bump is not generated on a side of the mounting substrate 10 away from the chip 30, which is beneficial for dissipating heat generated by the chip 30 through the insulating heat dissipation layer formed by the aluminum/titanium multilayer film 20 onto the mounting substrate 10, and then dissipating heat through the heat sink 60, so that a heat dissipation effect of the chip 30 can be improved. The utility model discloses can solve and adopt materials such as soldering tin to weld chip 30 on mounting substrate 10, because the higher or solder of temperature is more when IGBT FRD chip welding, form a large amount of little blackpoints and little solder bump at mounting substrate 10's non-welding face shape easily, influence mounting substrate 10's non-welding and radiator 60's area of contact's problem.
The utility model discloses still provide an air conditioner, include as above integrated chip, the air conditioner includes as above intelligent power module and integrated chip. The detailed structure of the intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the utility model discloses used above-mentioned intelligent power module and integrated chip in the air conditioner, consequently, the utility model discloses the embodiment of air conditioner includes all technical scheme of the whole embodiments of above-mentioned intelligent power module and integrated chip, and the technological effect that reaches is also identical, no longer gives unnecessary details here.
In practical application, the air conditioner further comprises an electric control board, the integrated chip and the intelligent power module are arranged on the electric control board and are electrically connected with electronic elements on the electric control board through circuit wiring.
The above is only the optional embodiment of the present invention, and not therefore the limit of the patent scope of the present invention, all of which are in the concept of the present invention, the equivalent structure transformation of the content of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.
Claims (9)
1. An integrated chip, comprising:
a mounting substrate;
an aluminum/titanium multilayer film provided on the mounting substrate; the aluminum/titanium multilayer film comprises an aluminum film and a titanium film, and the aluminum film and the titanium film are sequentially and alternately arranged on the mounting substrate;
and the chip is arranged on the aluminum/titanium multilayer film.
2. The integrated chip of claim 1, wherein the aluminum/titanium multilayer film undergoes a self-propagating reaction to cause the chip to be soldered to the aluminum/titanium multilayer film.
3. The integrated chip of claim 1, wherein the aluminum thin film has a thickness of 25 nm;
and/or the thickness of the titanium thin film is 25 nm.
4. The integrated chip of claim 1, wherein the number of layers of the aluminum thin film and the titanium thin film is 50 in total.
5. The integrated chip of claim 1, wherein the number of chips is plural,
the aluminum/titanium multilayer film is provided with a plurality of aluminum/titanium multilayer film mounting positions on the mounting substrate so as to be used for one-to-one welding mounting of a plurality of chips.
6. The integrated chip of claim 5, wherein a plurality of the chips are one or more combinations of IGBT chips, FRD chips, and driver chips.
7. The integrated chip of any one of claims 1 to 6, further comprising a package housing encapsulating the mounting substrate, the aluminum/titanium multilayer film, and the chip.
8. An intelligent power module, characterized in that it comprises an integrated chip according to any one of claims 1 to 7.
9. An air conditioner, characterized in that, it comprises an electric control board and an integrated chip as claimed in any one of claims 1 to 7; the integrated chip is arranged on the electric control board;
or comprising the smart power module of claim 8; the intelligent power module is arranged on the electric control board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920914958.XU CN210607234U (en) | 2019-06-17 | 2019-06-17 | Integrated chip, intelligent power module and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920914958.XU CN210607234U (en) | 2019-06-17 | 2019-06-17 | Integrated chip, intelligent power module and air conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210607234U true CN210607234U (en) | 2020-05-22 |
Family
ID=70696632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920914958.XU Expired - Fee Related CN210607234U (en) | 2019-06-17 | 2019-06-17 | Integrated chip, intelligent power module and air conditioner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210607234U (en) |
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2019
- 2019-06-17 CN CN201920914958.XU patent/CN210607234U/en not_active Expired - Fee Related
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Granted publication date: 20200522 |