CN112366188A - Semiconductor device packaging structure with radiating tooth sheet and packaging method - Google Patents
Semiconductor device packaging structure with radiating tooth sheet and packaging method Download PDFInfo
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- CN112366188A CN112366188A CN202010855916.0A CN202010855916A CN112366188A CN 112366188 A CN112366188 A CN 112366188A CN 202010855916 A CN202010855916 A CN 202010855916A CN 112366188 A CN112366188 A CN 112366188A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 230000017525 heat dissipation Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000003466 welding Methods 0.000 claims abstract description 14
- 229910021389 graphene Inorganic materials 0.000 claims description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims 1
- 239000007769 metal material Substances 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor device packaging structure with a heat dissipation tooth sheet and a packaging method, wherein the packaging structure comprises: a semiconductor device provided with a front electrode at a first end thereof and a back electrode at a second end thereof; a conductive bonding layer; the metal container comprises a connecting plate and a side wall plate, wherein the connecting plate comprises a connecting body and a plurality of radiating fins extending from the connecting body; the side wall plate extends and bends from the connecting body to form a packaging space with the connecting body in a surrounding manner; the semiconductor device is arranged in the packaging space, and the second end is connected with the connecting body through the conductive bonding layer; the side wall plate comprises an outer lead end, and the back electrode is electrically connected with the outer lead end through the conductive bonding layer and the connecting plate; the outer leading end and the front electrode are respectively welded with the substrate through the conductive welding material layer; the packaging method is used for packaging to obtain the packaging structure with the heat dissipation tooth sheet. The packaging structure has good heat dissipation performance, and the packaging method can obtain the packaging structure with good heat dissipation performance.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor device packaging structure with radiating fins and a packaging method.
Background
The existing semiconductor device packaging structure generally needs to weld a semiconductor device on a lead frame through welding materials, then adopts a metal lead to bond the semiconductor device and the lead frame, and then packages the semiconductor device and the lead frame through sealing materials such as epoxy resin and the like to form a packaging structure so as to electrically and physically protect the semiconductor device and an electrical connection point; however, since the thermal resistance of the package material is large, heat generated by the semiconductor device is mainly dissipated to the outside through the lead frame side, and the package structure is mainly dissipated through a single side, which is poor in heat dissipation performance. For packaging of power devices, higher heat dissipation performance is required.
The existing semiconductor device packaging structure is partially not suitable for externally adding a radiator, such as the existing SO-8 packaging structure; even if a heat sink is added to the exterior of a portion of the package structure, the heat sink needs to be soldered to the exterior of the package structure by a solder material (e.g., solder paste), for example, the heat sink is soldered to the exterior of the epoxy package body by the solder material, so that the added solder layer also increases the thermal resistance of the heat conduction path of the semiconductor device, and the heat dissipation performance of the package structure is still limited.
Disclosure of Invention
One object of an embodiment of the present invention is to: the semiconductor device packaging structure with the heat dissipation tooth sheet can realize double-sided heat dissipation, can reduce the thermal resistance of the packaging structure and has high reliability.
Another object of an embodiment of the present invention is to: a semiconductor device packaging method is provided, which can obtain a packaging structure with good heat dissipation performance by packaging.
In order to achieve the purpose, the invention adopts the following technical scheme:
a semiconductor device package structure having heat dissipating fins, comprising:
a semiconductor device provided with a front electrode at a first end thereof and a back electrode at a second end thereof, the second end being opposite to the first end;
a conductive bonding layer;
the metal container comprises a connecting plate and a side wall plate, wherein the connecting plate comprises a connecting body and a plurality of radiating fins extending from the connecting body; the side wall plate extends from the connecting body and bends towards the direction far away from the heat dissipation tooth piece so as to form a packaging space with the connecting body in a surrounding manner; the semiconductor device is arranged in the packaging space, and the second end is connected with the connecting body through the conductive bonding layer; the side wall plate comprises an outer lead end, and the back electrode is electrically connected with the outer lead end through the conductive bonding layer and the connecting plate;
the outer leading end and the front electrode are respectively welded with the substrate through a conductive welding material layer; the metal container is connected with the substrate to seal the encapsulation space.
Preferably, the conductive bonding layer is a graphene bonding film, one surface of the graphene bonding film is bonded or adhered to the second end of the semiconductor device, and the other surface of the graphene bonding film is bonded or adhered to the connection body.
Preferably, a plurality of radiators are discretely doped in the metal container, and the radiators are graphene particles or graphite particles.
Preferably, the metal container is a copper container.
Preferably, the semiconductor device is a MOSFET device; the second end is provided with at least two front electrodes, and the second end is provided with a source electrode and a grid electrode; the back electrode is a drain electrode.
Preferably, the heat-conducting plate further comprises a heat-conducting fin, and the heat-conducting fin is vertically arranged in the connecting plate; the heat conducting fins are graphite heat conducting fins or graphene heat conducting fins.
Preferably, the heat dissipation fins are formed at one end of the connecting body far away from the semiconductor device, and a plurality of the heat dissipation fins are arranged at intervals; one part of the heat conducting sheet is positioned in the connecting body, and the other part of the heat conducting sheet is positioned in the heat radiating tooth sheet.
Preferably, the connecting plate is provided with a vertical inserting piece groove, and the heat conducting piece is inserted into the inserting piece groove.
A semiconductor device packaging method comprising the steps of:
a semiconductor device providing step: providing a semiconductor device, wherein a front electrode is arranged at a first end of the semiconductor device, and a back electrode is arranged at a second end opposite to the first end;
a graphene-bonded film providing step: providing a graphene binding film;
a first combining step: bonding or adhering the graphene bonding film to a second end of the semiconductor device to electrically connect the back electrode with the graphene bonding film;
a metal container providing step: providing a metal container comprising a connecting plate and a side wall plate, the side wall plate comprising an outer lead end; the side wall plate extends and bends from the connecting plate to form a packaging space with the connecting plate in a surrounding manner;
the heat dissipation tooth sheet processing step: etching a plurality of grooves distributed at intervals at one end of the connecting plate far away from the packaging space to form a plurality of radiating fins;
a second combining step: bonding or adhering one end of the connecting plate, which is far away from the heat dissipation tooth sheet, and one end of the graphene bonding film, which is far away from the semiconductor device, so that the graphene bonding film is electrically connected with the metal container;
a substrate welding step: and respectively welding the outer leading end and the front electrode with the substrate through conductive welding materials.
Preferably, the method further comprises a second processing step of the metal container: etching a plug-in sheet groove with the same extending direction as the radiating tooth sheet on the connecting plate in an etching mode, and sealing an opening of the plug-in sheet groove after a graphite sheet or a graphene sheet is inserted into the plug-in sheet groove;
the first processing step of the metal container, the providing step of the metal container, the processing step of the heat dissipation tooth piece and the second processing step of the metal container are sequentially carried out.
The invention has the beneficial effects that: the semiconductor device packaging structure with the heat dissipation tooth sheet has the advantages that double-sided heat dissipation can be realized, the thermal resistance of the packaging structure can be reduced, and the reliability is high; by the semiconductor device packaging method, a packaging structure with good heat dissipation performance can be obtained through packaging.
Drawings
The invention is explained in more detail below with reference to the figures and examples.
Fig. 1 is a schematic structural diagram of a metal container according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a metal container according to another embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a metal container according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a metal container according to another embodiment of the present invention;
fig. 5 is a schematic view of the bonding between the metal container and the graphene bonding film according to the embodiment of the present invention;
fig. 6 is a schematic structural diagram of a semiconductor device package structure according to an embodiment of the invention;
fig. 7 is a schematic structural diagram of a semiconductor device package structure according to another embodiment of the invention;
in the figure: 10. a semiconductor device; 11. a first end; 141. a source electrode; 142. a gate electrode; 15. a drain electrode; 20. a graphene binding film; 30. a metal container; 31. a connecting plate; 311. a connecting body; 312. a heat dissipating blade; 32. a side wall panel; 321. an external leading end; 33. a heat sink; 34. a heat conductive sheet; 40. packaging the space; 50. a pad; 60. a substrate; 70. and a conductive welding material layer.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, unless otherwise explicitly specified or limited, the terms "connected" and "fixed" are to be understood broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The invention provides a semiconductor device packaging structure with radiating fins, which can realize double-sided heat radiation, can reduce the thermal resistance of the packaging structure and has high reliability.
In an embodiment of the semiconductor device package structure with heat dissipation fins of the present invention, the package structure includes:
a semiconductor device 10 provided with a front electrode at a first end 11 thereof and a back electrode at a second end thereof, the second end being opposite to the first end 11;
a conductive bonding layer;
a metal container 30 including a connecting plate 31 and a sidewall plate 32, the connecting plate 31 including a connecting body 311 and a plurality of heat dissipating fins 312 extending from the connecting body 311; the side wall plate 32 extends from the connecting body 311, and bends toward a direction away from the heat dissipation blade 312 to form a packaging space 40 with the connecting body 311; the semiconductor device 10 is disposed in the package space 40, and the second end is connected to the connection body 311 through the conductive bonding layer to fix the semiconductor device 10 to the metal container 30 to form a first bonding structure and electrically connect the back electrode to the connection plate 31; the side wall plate 32 includes an outer lead 321, and the back electrode is electrically connected to the outer lead 321 through the conductive bonding layer and the connection plate 31; the external lead end 321 is used for leading the back electrode out to serve as an electrical connection member of the back electrode and an external circuit carrier or device.
Further, the package structure further includes a substrate 60, wherein the outer lead 321 and the front electrode are respectively welded to the substrate 60 through a conductive welding material layer 70, so that the first bonding structure is fixed to the substrate 60, thereby forming a package structure, and the back electrode is electrically connected to the substrate 60, and the front electrode is electrically connected to the substrate 60; the metal container 30 is coupled to the substrate 60 to seal the encapsulation space 40.
Specifically, the substrate 60 is provided with a plurality of lands, and the outer lead surface 321 and the front electrode(s) are electrically connected to the lands on the substrate 60, respectively. The substrate 60 is an intermediate connector for electrically connecting the semiconductor device 10 to a circuit board, such as a ceramic copper-clad substrate, or the substrate 60 is a circuit board.
Specifically, the connecting body 311 and the heat dissipation fins 312 are an integral structure, and a plurality of spaced grooves can be formed at one end of the connecting plate 31 far away from the semiconductor device 10 by etching the connecting plate 31, so that the heat dissipation fins 312 are formed by protrusions between adjacent grooves.
Specifically, the top of the package structure is the end provided with the metal container 30, the bottom of the package structure is the end provided with the substrate 60, and the package structure is electrically connected to the circuit board through the external terminal 321 on the substrate 60 in a plugging or mounting manner during application.
Further, the semiconductor device 10 is a MOSFET device; the second end is provided with at least two front electrodes, and the second end is provided with a source electrode 141 and a grid electrode 142; the back electrode is a drain 15.
According to the packaging structure, the semiconductor device 10 is directly packaged by the metal container 30, so that double-side heat dissipation can be realized, one side of the semiconductor device 10 can dissipate heat to the outside through the metal container 30, the other side of the semiconductor device 10 can dissipate heat to the outside through the substrate 60, and the heat dissipation performance is good; moreover, the package structure does not need to adopt package materials such as epoxy resin, and the heat dissipated from the second end of the semiconductor device 10 to the outside can be dissipated to the outside directly through the conductive bonding layer and the metal container 30.
The metal container 30 of the present invention is not only used for cooperating with the substrate 60 to form the sealed packaging space 40 for cooperating with the semiconductor device 10 to electrically and physically protect the semiconductor device 10 inside the packaging space 40, but also used for heat conduction and heat dissipation; moreover, the metal container 30 is also used as a conductive connecting member to lead the back electrode out, and compared with the case of using a metal lead as a conductive connecting member, the metal container can effectively avoid the situation that parasitic resistance is large due to the thin metal lead, so that the operation performance of the semiconductor device 10 is improved, the reliability of the packaging structure is improved, and the metal container is suitable for packaging a power device.
In the packaging structure of the invention, a plurality of radiating fins 312 are formed at one end of the metal container 30, which is in contact with air, so that the contact area of the metal container 30 and the air is increased, and the radiating efficiency of one side of the packaging structure, which is provided with the metal container 30, is improved; the packaging structure is suitable for heat dissipation through an air cooling active heat dissipation mode, so that the packaging structure has high heat dissipation performance and is suitable for packaging of power devices.
Moreover, the package structure of the present invention employs the metal container 30, and the heat dissipation fins 312 are directly formed outside the metal container 30, so that an additional external heat sink is not required to be added outside the package structure, and thus, the solder material layer between the package structure and the external heat sink can be reduced, and the metal container 30 has a better heat conduction performance, and the thermal resistance of the heat dissipation channel from the second end of the semiconductor device 10 to the end surface of the heat dissipation structure is reduced. In the prior art, when an external radiator is welded outside the packaging structure through welding materials, a cavity is possibly formed in the solidified welding materials due to the fact that the cavity is generated in the molten welding materials in the reflow soldering process, and the thermal resistance on a radiating channel is increased due to the existence of the cavity.
In addition, the package structure of the present invention, due to the metal container 30, is convenient to etch a plurality of grooves on the back end of the connection board 31 of the metal container 30, that is, on the end of the connection board 31 away from the semiconductor device 10, by a chemical etching method, so as to form the heat dissipation fins 312 between the grooves.
The packaging structure of the invention reduces the packaging impedance, and adopts the metal container 30 as the electric connection structure of the back electrode and the substrate 60, thereby improving the heat radiation performance of the packaging structure and simultaneously improving the current carrying capacity of the packaging structure.
Further, in another embodiment of the package structure of the present invention, the conductive bonding layer is a graphene bonding film 20, one side of the graphene bonding film 20 is bonded or adhered to the second end of the semiconductor device 10, and the other side of the graphene bonding film 20 is bonded or adhered to the connection body 311.
For the package structure, it is necessary to control the thickness of the conductive bonding layer formed between the semiconductor device 10 and the metal container 30 within a suitable range to ensure the reliability of the electrical connection; if the conductive silver paste or solder is used as a soldering material to form the conductive bonding layer by curing, a fillet is easily formed on the device sidewall of the semiconductor device 10 during the bonding process of the semiconductor device 10 and the metal container 30, and if the fillet is too high, a failure such as short circuit is easily caused in a high-temperature and high-humidity environment; in addition, during the reflow soldering process of the soldering material, voids exist in the conductive bonding layer due to insufficient soldering material or the occurrence of depressions in the melted soldering material, so that the thermal resistance of the conductive bonding layer is increased.
In the embodiment, the graphene bonding film 20 is used as a conductive bonding layer, and since the graphene bonding film 20 is a solid film, in the packaging process, the graphene bonding film 20 with a suitable thickness can be selected according to data such as the overall size of the packaging structure and the thickness of the semiconductor device 10, and the semiconductor device 10, the graphene bonding film 20 and the metal container 30 are mounted into a whole through a mounting step or a bonding step, so that the semiconductor device 10 is fixed to the metal container 30, and the electrical connection between the back electrode and the metal container 30 is completed. The thickness of the graphene bonding film 20 can be selected, the thickness of the graphene bonding film is not greatly changed in the mounting process, the thickness error can be controlled within plus or minus 3mm, and the graphene bonding film 20 is kept in a solid state, so that an excessively high fillet weld can be prevented from being formed on the side wall of the semiconductor device 10; and the occurrence of holes in the conductive bonding layer can be avoided, so that the heat conduction reliability of the conductive bonding layer is ensured.
This implementation adopts the graphene bonding film 20 with high thermal conductivity as the electrically conductive bonding layer, can make the heat that is produced by semiconductor device 10 conduct to metal container 30 more efficiently, evenly through the second end of device.
The packaging structure adopts a direct packaging mode that the metal container 30 is matched with the substrate 60, the heat dissipation tooth piece 312 is formed outside the connecting plate 31 of the metal container 30, the graphene bonding film 20 is used as a conductive bonding layer, the packaging thermal resistance is reduced through multiple dimensions, the thermal resistance of a heat conduction channel between a back electrode and the outside is greatly reduced, the heat dissipation performance is greatly improved, the current carrying capacity is improved, and the packaging structure is suitable for packaging power devices.
Specifically, it is found through experiments that, when the semiconductor device 10 is a MOSFET device, the metal container 30 having the heat dissipation fins 312 and the direct package structure using the graphene bonding film 20 as a conductive bonding layer are adopted, and under the active air cooling condition, the amount of heat dissipated from the top of the package structure in a unit time is increased by at least 0.8 times compared with a common direct package structure (a direct package structure in which the metal container 30 does not have the heat dissipation fins 312 and a solder layer is adopted as a conductive bonding layer), and is increased by at least 3 times compared with an existing S0-8 type package structure; thus, the high top heat dissipation efficiency is achieved, heat emitted by the semiconductor device 10 can be taken away from the circuit board, the safe current carrying value of the device is improved, and the semiconductor device is suitable for packaging of power devices.
Further, in another embodiment of the package structure of the present invention, in order to further improve the heat dissipation capability of the top of the package structure, a plurality of heat dissipation bodies 33 are doped inside the connection board 31, where the heat dissipation bodies 33 are graphene particles or graphite particles.
In the packaging structure of the semiconductor device 10, the plurality of graphite radiators 33 are doped in the connecting plate 31, and the thermal conductivity coefficients of the graphite radiators 33 and the graphene radiators 33 are larger than that of metal, so that the thermal resistance from the second end of the device to the external environment can be reduced, the heat dissipation performance of the packaging structure is improved, the packaging structure can uniformly dissipate heat outwards, and local overheating is avoided.
Further, in another embodiment of the package structure of the present invention, the metal container 30 is a copper container; copper has good heat conduction and electric conduction performance, and compared with silver materials, the copper materials have relatively low cost and controllable cost.
Further, in another embodiment of the package structure of the present invention, in order to enable the semiconductor device 10 to more uniformly and efficiently conduct heat to the heat dissipation fins 312 to dissipate heat of the package structure in an external air cooling manner, in this embodiment, the package structure includes a heat conduction sheet 34, and the heat conduction sheet 34 is vertically disposed in the connection plate 31, so that a planar direction (X direction or Y direction) of the heat conduction sheet 34 is parallel to an extending direction (i.e., a height direction of the package structure) of the heat dissipation fins 312; the heat conducting sheet 34 is a graphite heat conducting sheet 34 or a graphene heat conducting sheet 34; with such an arrangement, because the graphite heat conducting strip 34 or the graphene heat conducting strip 34 has a high plane heat conductivity coefficient (500W/mK to 5500W/mK, and the specific heat conductivity coefficient is related to the composite material and the preparation method), the heat conducting strip 34 is vertically arranged so that the plane direction of the heat conducting strip 34 is parallel to the extending direction of the heat dissipation fins, and thus the heat in the connecting body 311 is efficiently and uniformly conducted to the heat dissipation fins 312 through the heat conducting strip 34; thus, when the air cooling method is used for heat dissipation, the fluid contacts the outer surface of the heat dissipation blade 312, and the heat of the package structure can be efficiently dissipated.
In the package structure of the present embodiment, the heat sink is disposed inside the connection plate 31, and the heat conductive performance can be more uniformly realized compared to the case where the heat sink is directly attached to the outer surface of the connection plate 31.
Further, the heat sink is made of graphene.
Further, the heat dissipation fins 312 are formed at one end of the connecting body 311 away from the semiconductor device 10, and a plurality of the heat dissipation fins 312 are arranged at intervals; a part of the heat-conducting plate 34 is located in the connecting body 311, and another part is located in the heat-dissipating fins 312; this facilitates the conduction of heat to the cooling fins 312.
Further, a vertical insertion groove is formed in the connecting plate 31, and the heat conducting fin 34 is inserted into the insertion groove.
Specifically, a sealing cover glue is arranged at the top of the insert groove.
Further, a plurality of bonding pads 50 are arranged on the substrate 60, the bonding pads 50 include a first bonding pad 50, a second bonding pad 50 and a third bonding pad 50, the end face of the outer leading end 321 sequentially passes through the first bonding pad 50 and the substrate 60 in a conductive combination manner, the gate 142 sequentially passes through the second bonding pad 50 and the substrate 60 in a conductive combination manner, and the source 141 sequentially passes through the third bonding pad 50 and the third bonding pad 50 in a conductive combination manner and the substrate 60.
The invention also provides a semiconductor device packaging method, which can obtain a packaging structure with good heat dissipation performance by packaging.
As shown in fig. 1 to 7, in an embodiment of the packaging method of the present invention, the packaging method includes the following steps:
the semiconductor device 10 providing step: providing a semiconductor device 10, wherein a front electrode is arranged at a first end 11 of the semiconductor device 10, and a back electrode is arranged at a second end opposite to the first end 11;
the graphene-bonded film 20 providing step: providing a graphene binding film 20;
a first combining step: bonding or adhering the graphene bonding film 20 to a second end of the semiconductor device 10 to electrically connect the back electrode with the graphene bonding film 20;
the metal container 30 providing step: providing a metal container 30, said metal container 30 comprising a connecting plate 31 and a side wall plate 32, said side wall plate 32 comprising an outer lead 321; the side wall plates 32 are extended and bent from the connecting plate 31 to form a packaging space 40 with the connecting plate 31;
and (3) processing the heat dissipation toothed sheet 312: etching a plurality of grooves distributed at intervals at one end of the connecting plate 31 far away from the packaging space 40 to form a plurality of radiating fins 312;
a second combining step: bonding or adhering one end of the connection plate 31 away from the heat dissipation fins 312 to one end of the graphene bonding film 20 away from the semiconductor device 10 to electrically connect the graphene bonding film 20 with the metal container 30;
Further, in another embodiment of the packaging method of the present invention, the packaging method further comprises:
first processing step of the metal container 30: providing a metal material and a granular heat dissipation material, and mixing the metal material and the heat dissipation material; the metal material is a molten metal material or a granular metal material; when the metal material is a molten metal material, the metal material and the heat dissipation material are mixed, the mixed material is poured into a forming mold, and the mixed material is integrally formed by baking and curing to form the metal container 30; when the metal material is a granular metal material, the metal material and the heat dissipation material are mixed and sintered to integrally form the mixed material;
second processing step of the metal container 30: etching a slot with the same extending direction as the heat dissipation tooth piece 312 on the connecting plate 31 by etching, and after inserting a graphite sheet or a graphene sheet into the slot, sealing the opening of the slot;
the first processing step of the metal container 30, the providing step of the metal container 30, the processing step of the heat dissipation fins 312, and the second processing step of the metal container 30 are performed in this order.
By the packaging method of the present invention, the packaging structure with the heat dissipation fins 312 in other embodiments of the present invention can be obtained by packaging.
In the description herein, it is to be understood that the terms "upper", "lower", "left", "right", and the like are used in an orientation or positional relationship based on that shown in the drawings, and are used for convenience of description and simplicity of operation only, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used merely for descriptive purposes and are not intended to have any special meaning.
In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.
Claims (10)
1. A semiconductor device package structure having heat dissipating fins, comprising:
a semiconductor device (10) provided with a front electrode at a first end (11) thereof and a back electrode at a second end thereof, the second end being opposite to the first end (11);
a conductive bonding layer;
a metal container (30) comprising a connecting plate (31) and a side wall plate (32), said connecting plate (31) comprising a connecting body (311) and a number of heat dissipating fins (312) extending from said connecting body (311); the side wall plate (32) extends from the connecting body (311) and bends towards the direction far away from the radiating tooth piece (312) so as to form a packaging space (40) with the connecting body (311); the semiconductor device (10) is arranged in the packaging space (40), and the second end is connected with the connecting body (311) through the conductive bonding layer; the side wall plate (32) comprises an outer lead end (321), and the back electrode is electrically connected with the outer lead end (321) through the conductive bonding layer and the connecting plate (31).
The outer leading end (321) and the front electrode are respectively welded with the substrate (60) through a conductive welding material layer (70); the metal container (30) is connected with the substrate (60) to seal the encapsulation space (40).
2. The semiconductor device package structure with the heat dissipation fins as recited in claim 1, wherein the conductive bonding layer is a graphene bonding film (20), one side of the graphene bonding film (20) is bonded or adhered to the second end of the semiconductor device (10), and the other side of the graphene bonding film (20) is bonded or adhered to the connection body (311).
3. The semiconductor device packaging structure with the heat dissipation fins as recited in claim 1, wherein a plurality of heat dissipation bodies (33) are discretely doped in the metal container (30), and the heat dissipation bodies (33) are graphene particles or graphite particles.
4. The semiconductor device package structure with heat dissipating fins according to claim 1, wherein the metal container (30) is a copper container.
5. The semiconductor device package structure with the heat dissipating blade as set forth in claim 1, wherein the semiconductor device (10) is a MOSFET device; the second end is provided with at least two front electrodes, and the second end is provided with a source electrode (141) and a grid electrode (142); the back electrode is a drain electrode (15).
6. The semiconductor device package structure with the heat dissipating fins according to any one of claims 1 to 5, further comprising a heat conductive sheet (34), the heat conductive sheet (34) being vertically disposed inside the connection plate (31); the heat conducting fins (34) are graphite heat conducting fins (34) or graphene heat conducting fins (34).
7. The semiconductor device package structure with the heat dissipation fins as recited in claim 6, wherein the heat dissipation fins (312) are formed at an end of the connecting body (311) away from the semiconductor device (10), and a plurality of the heat dissipation fins (312) are arranged at intervals; one part of the heat conducting sheet (34) is positioned in the connecting body (311), and the other part is positioned in the heat radiating tooth sheet (312).
8. The semiconductor device package structure with heat dissipating fins according to claim 6, wherein vertical fin insertion grooves are provided on the connecting plate (31), and the heat conductive fins (34) are inserted into the fin insertion grooves.
9. A semiconductor device packaging method is characterized by comprising the following steps:
a semiconductor device (10) providing step: providing a semiconductor device (10), wherein a first end (11) of the semiconductor device (10) is provided with a front electrode, and a second end opposite to the first end (11) is provided with a back electrode;
a graphene-bonded film (20) providing step: providing a graphene binding film (20);
a first combining step: bonding or adhering the graphene bonding film (20) to a second end of the semiconductor device (10) to electrically connect the back electrode with the graphene bonding film (20);
a metal container (30) providing step of: providing a metal container (30), said metal container (30) comprising a connecting plate (31) and a side wall plate (32), said side wall plate (32) comprising an outer lead end (321); the side wall plate (32) extends and bends from the connecting plate (31) to form a packaging space (40) together with the connecting plate (31);
the machining step of the radiating tooth piece (312) comprises the following steps: etching a plurality of grooves distributed at intervals at one end of the connecting plate (31) far away from the packaging space (40) to form a plurality of radiating fins (312);
a second combining step: bonding or adhering one end of the connecting plate (31) far away from the heat dissipation tooth sheet (312) and one end of the graphene bonding film (20) far away from the semiconductor device (10) so as to electrically connect the graphene bonding film (20) and the metal container (30);
substrate (60) soldering step: and welding the external lead end (321) and the front electrode with the substrate (60) through conductive welding materials respectively.
10. The semiconductor device packaging method according to claim 9, further comprising a second processing step of the metal container (30): etching a picture inserting groove with the same extending direction as the heat dissipation tooth piece (312) on the connecting plate (31) in an etching mode, inserting a graphite sheet or a graphene sheet into the picture inserting groove, and then sealing an opening of the picture inserting groove;
the first processing step of the metal container (30), the providing step of the metal container (30), the processing step of the heat dissipation tooth piece (312) and the second processing step of the metal container (30) are sequentially carried out.
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| CN112366188B (en) | 2023-07-25 |
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