CN108364913A - A kind of leadless packaging structure and preparation method for silicon carbide power device - Google Patents
A kind of leadless packaging structure and preparation method for silicon carbide power device Download PDFInfo
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- CN108364913A CN108364913A CN201810377296.7A CN201810377296A CN108364913A CN 108364913 A CN108364913 A CN 108364913A CN 201810377296 A CN201810377296 A CN 201810377296A CN 108364913 A CN108364913 A CN 108364913A
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- Prior art keywords
- silicon carbide
- power device
- copper
- nitride
- carbide power
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Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 59
- 229910052802 copper Inorganic materials 0.000 claims abstract description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 23
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 31
- 239000010931 gold Substances 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 15
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000443 aerosol Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000002086 nanomaterial Substances 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002070 nanowire Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000007767 bonding agent Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 244000247747 Coptis groenlandica Species 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 238000007639 printing Methods 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 241000218202 Coptis Species 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical group CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of leadless packaging structures and preparation method for silicon carbide power device.This encapsulating structure include a surface have the aluminum-nitride-based bottom of circle of fluting and through-hole, silicon carbide power device, without lead thin film circuit, the copper being bonded on aluminum-nitride-based bottom is heat sink and aluminium nitride packaged cap.The lead not having in encapsulating structure of the present invention, without the unfavorable condition for worrying open circuit, virtual connection caused by lead is possible.Moreover, aluminium nitride material is close with the thermal conductivity of silicon carbide, device is fixed in groove, does not have excessive thermal stress, ensures the reliability of device.
Description
Technical field
The present invention relates to a kind of encapsulating structure of silicon carbide power device more particularly to it is a kind of using printing technology prepare
Inside carries copper heat sink encapsulating structure and preparation method without lead.
Background technology
Power semiconductor refers to the electronic device for being directly used in electric energy conversion or control in power circuit.Currently, work(
The main material of rate semiconductor devices is silicon.But the demand with people to electric power constantly expands, the use of Si power device
Condition has reached the limit, and researcher is promoted to find new alternative materials.Carbofrax material is third generation wide bandgap semiconductor material
Material has high critical breakdown electric field (operating voltage is high), high heat conductance, high current density and high work temperature compared with silicon materials
The advantages such as degree.High current and high working voltage mean that power is very high, and the heat release of device is very big.Under high temperature, device is easy to
Aging failure, therefore it is vital task to reduce temperature for power device.Encapsulation is extremely weighed in semiconductor devices preparation process
The step wanted.This is because encapsulation can protect device body, the Stability and dependability of device can be improved with supporting device.
Aluminium nitride has very high thermal conductivity.It is well suited for the encapsulation requirement of silicon carbide power device, and the similar thermal expansion coefficient of the two,
Excessive thermal stress is not will produce.On the other hand, often sharp in the encapsulation of silicon carbide device in order to timely and effectively radiate
With the heat sink quickening radiating rate of copper.
Printed electronics refer to the nano material using printing technology and dispersion in a solvent, form figure in the plane
The film of change ultimately forms the manufacturing process of electronic component.It compares with traditional electronic device manufacture, printed electronics
Have the characteristics that thinness, flexibility, at low cost, environmentally protective and energy utilization efficiency are high, high-volume and high-speed production may be implemented,
Effectively reduce production cost.There are many printing technology that can be used for printed electronic, for example, silk-screen printing, inkjet printing, R2R (volumes pair
Volume) technologies such as printing, intaglio printing and aerosol printing, they have a report and document for preparing electronic component, but it
Have their own advantages with it is insufficient.For example, silk-screen printing can be in certain area, the pattern of the height such as quick formation, but it is uncomfortable
It shares in connection line and line.This is because silk-screen printing is contact printing, it is possible to destroy already existing pattern.Ink-jet is beaten
The operation of print is most easy, but since the solvent in ink can form the cricoid residual of coffee, and the printing of ink drop by drop,
The rate for forming pattern is slower.R2R prints and intaglio printing is more suitable for being printed on flexible substrates surface.In contrast, gas
Colloidal sol printing is to deliver nano-particle using aerosol, is contactless printing, is more suitable for coupling device electrode and external connection
Circuit will not destroy the surface texture of device.
Invention content
The unfavorable condition that the purpose of the present invention is to provide a kind of without worrying open circuit, virtual connection caused by lead is possible, no
Excessive thermal stress is had, ensures the leadless packaging structure for silicon carbide power device of device reliability.
The object of the present invention is achieved like this：The encapsulating structure includes that a surface is fluted and the round of through-hole nitrogenizes
Aluminium substrate, silicon carbide power device, without lead thin film circuit, the copper being bonded on aluminum-nitride-based bottom is heat sink and aluminium nitride envelope
Capping, no lead thin film circuit are arranged on aluminum-nitride-based bottom and connect the electrode of external circuit and silicon carbide power device, carbon
SiClx power device is fixed in the groove on aluminum-nitride-based bottom, and heat-conducting glue is provided between silicon carbide power device and aluminium nitride
Separation layer, with silicon carbide power device in a plane, aluminium nitride packaged cap is arranged in copper sheet no lead thin film circuit
Above external electrode, aluminum-nitride-based bottom and copper it is heat sink between be provided with aluminium oxide bonded layer, be bonded on the through-hole at aluminum-nitride-based bottom
Copper sheet external electrode.
Another object of the present invention is to provide a kind of preparation methods preparing above-mentioned encapsulating structure, it includes following
Step：（1）Hole is got through at aluminum-nitride-based bottom using numerically-controlled machine tool (CNC), and a sulculus is opened on surface；（2）It will processing
Aluminium nitride substrate oxidation afterwards, and DBC processes are utilized, in the presence of oxygen, it is bonded with aluminium oxide by copper is heat sink；
（3）Pickling removes extra alumina layer, exposes aln surface；（4）Heat-stable ceramic glue sticking copper sheet is utilized near through-hole,
So that copper sheet covers through-hole；（5）Silk-screen printing Gold conductor forms circuit pattern in aln surface and fills through-hole, after sintering
Form gold thin film circuit；（6）Silicon carbide device is fixed on to the groove of aln surface, heat-conducting glue is used between device and aluminium nitride
Remove air layer；（7）Gold nano-material layer is printed using aerosol printing (Aerosol jet printing), couples external circuit
With the electrode of device；（8）Encapsulating structure integrally carries out annealing operation, temperature 300 ~ 400oC anneals, and eliminates the inside of each interlayer
Stress；（9）It is bonded aluminium nitride circular lid, forms an encapsulating structure.
The invention firstly uses numerically-controlled machine tools (CNC) to get through hole in aluminum-nitride-based bottom surface fluting, reheats nitridation
Aluminium prepares one layer of alumina layer on aluminium nitride material surface；Utilize Direct bond copper technology (DBC)
The alumina layer planar section heat sink with copper is bonded by method, forms a complex structure；The method for recycling pickling, goes
Except the nitridation remaining alumina layer of aluminum soleplate；Ceramic glue sticking copper sheet is utilized around through-hole so that copper sheet seals through-hole；Again with
The circuit pattern of silk-screen printing simultaneously fills through-hole, and the nano material in slurry is gold nano grain, after annealing evaporation solvent, reburns
Knot forms nano-Au films circuit；Silicon carbide power device is put into groove and is fixed, between device electrode and external connection circuit
Raceway groove is filled using aerosol printing gold nano-material, connection is completed after annealing；Finally, it is nitrogenized using ceramic glue sticking
Aluminium cap completes the preparation process of encapsulating structure.
The present invention also has some features in this way：
1, in the utilization numerically-controlled machine tool preparation process, 2 mm of diameter of through-hole, aluminum-nitride-based bottom is silicon carbide device
2 times of thickness, the depth of sulculus are equal to the thickness of silicon carbide device, ensure the electrode of device and the external connection circuit of aln surface
Gold thin film in sustained height.
2, in the heat sink bonding process of the copper, copper is heat sink to be bonded with the oxidation aluminium surface of unslotted, and copper
Heat sink center line is overlapped with small groove center line.
3, in the copper sheet bonding process, ensure that bonding agent does not enter through-hole, copper sheet surface seals through-hole itself.Copper sheet
After sealing through-hole, expose 2 cm other than circular package lid.
4, during the copper is heat sink, copper tooth surface increases heat dissipation by processing, Surface Creation copper nano-wire layer
Specific surface area.The length, width and height of copper tooth be all be twice of silicon carbide device size.
5, in the screen printing process, the diameter of golden particle is in 0.1 ~ 0.3 μ m in Gold conductor.Slurry
The vacuum-sintering temperature of material is 600 ~ 700oWithin the scope of C, sintering time is 120o10 mins under C, 600 ~ 700 oCLower 15
Then mins is naturally cooling to room temperature.The material of silk screen is steel wire, and the diameter of line is 30 μm, and the mesh number of silk screen is 200 ~ 300
Mesh.In about 80 ~ 100 μ m of gold thin film thickness of formation.
6, in the silicon carbide device fixation procedure, bottom device spin coating one layer of heat-conducting glue, removal devices and groove
Air layer between bottom increases heat transfer.Device is placed in groove, can firmly fix device, prevents device movement from causing
Open circuit.
7, in the annealing of the encapsulating structure, heat up 2 h, 300 ~ 400o3 h of C ranges inside holding, Temperature fall 5
H amounts to 10 h, to eliminate the internal stress between each film.
8, in the bonding of the nitridation aluminum cover, aluminium nitride lid is using heat-stable ceramic glue sticking at aluminum-nitride-based bottom
Side wall forms the space that a closed waterproof and anti-other atmosphere enter in device and circuit surface.
9, in the screen printing sizing agent, the solid content 60% ~ 80% of gold nano-material forms the width of nano gold layer
Degree is approximately equal to the width of device electrode.
10, the acids for corrosion oxidation aluminium, but the aqueous solution of the strong acid such as hydrochloric acid, sulfuric acid, nitric acid, can also be acidity
Above-mentioned hydrochlorate buffer solution.PH value is in the range of 2 ~ 3.
11, in the preparation process of the copper nano-wire in the heat sink serrated surface of copper, be utilized baffle with nano-pore and
Electrochemical method.
12, in aerosol print procedure, 1.6 g/ml of density of gold nanoparticle ink, solid content 40 ~ 50%,
6 ~ 10 cP of viscosity.Coupling device electrode and the context layer of external connection circuit will cover entire device electrode, and cover external connection electricity
The gold thread on road re-forms 10 ~ 20 μm of gold thin films more than gold thread surface.
Beneficial effects of the present invention have：
1, aluminium nitride with copper heat sink be to be bonded, generate new compound, and form chemical bond.Therefore, Billy interface
Heat Conduction Material removal air layer is more advantageous to hot transmission.
2, copper heat sink surface is also to have nano thread structure covering, can also increase the heat sink heat dissipation specific surface area of copper, is improved
Heat dissipation effect in air.
3, using silk-screen printing and aerosol printing two methods be used in combination, while taken into account circuit formation efficiency with couple
Safety and reliability when device ensures that device surface is not destroyed or disturbs.
4, the lead not having in this encapsulating structure, without the unfavorable condition for worrying open circuit, virtual connection caused by lead is possible.Moreover,
Aluminium nitride material is close with the thermal conductivity of silicon carbide, and device is fixed in groove, does not have excessive thermal stress, ensures device
Reliability.
Description of the drawings
Fig. 1 is the schematic diagram of silicon carbide power device encapsulating structure；
The molecular structure and nanostructured monomers schematic diagram that Fig. 2 is Na-GA3C11；
The molecular structure that Fig. 3 is Na-GA3C11 and the self-assembled film schematic diagram with nano-pore.
Specific implementation mode
Embodiment 1
The present invention is described further with reference to the accompanying drawings and detailed description：
In conjunction with Fig. 1, the present embodiment encapsulating structure, which includes a surface, fluting and the aluminium nitride circular-base 1 of through-hole, silicon carbide
Power device 4, without 5, copper being bonded on aluminum-nitride-based bottom heat sink 2 of lead thin film circuit and aluminium nitride packaged cap 6.
During preparing copper nano-wire, copper is heat sink 2 surfaces carry the polymer baffle of nano-pore, can be by self assembly side
It is prepared by method.For example, the monomer with nanostructure can be self-assembly of as shown in Fig. 2 using molecule Na-GA3C11.Through
After crossing ultraviolet light, monomer polymerization is formed with the film baffle arrangement of nano-pore.First, copper is heat sink successively with acetone, second
Alcohol and deionized water are cleaned, and the organic matter layer on surface is removed.Then, by nanostructured monomers, disperse in aqueous solution, shape
At suspension, ultrasonic vibration is used in combination to make powder dispersion uniform.This suspension is drawn with rubber head dropper, score time instills copper heat
The Adsorption on Surface of heavy sawtooth.After ultraviolet light, the polymer baffle film with nano-pore is formed.By this copper heat
It is immersed in electrolyte, electrolyte is 0.1 M CuSO4 + 1 M H2SO4Mixed solution.Couple copper heat sink electrode with
CHI660D electrochemical workstations, reference electrode Ag/AgCl, to electrode platinum piece.Using cyclic voltammetry, in polymer
Copper nano-wire is prepared in the nano-pore of baffle.After the preparation for completing copper nano-wire, heat sink with copper nano-wire is put into electric furnace
In, 300oC carries out annealing 2 hours, while annealing nanowires, burns out polymer baffle.
On 1 surface of aluminium nitride ceramics bottom plate two through-holes and a groove structure are prepared using CNC.When processing through-hole,
After processing certain depth, is processed from other one side, get through hole in middle section, prevent aluminium nitride ceramics material fragmentation.By nitrogen
Change aluminum soleplate to be put into electric furnace, is heated to 1200oC, keeps temperature 8 hours, and one layer of alumina layer is prepared in aln surface.
DBC bonding operations are carried out, aluminium oxide generates CuAlO with copper4Compound layer, nitridation aluminum soleplate and copper is heat sink form it is compound
Body.Acid solution is recycled, the remaining alumina layer of complex surfaces is removed, exposes aln surface.Two copper sheets are covered
Through-hole surfaces are around cemented with ceramic glue, form two copper sheet external electrodes 3.
In screen printing process, first have to prepare the printing screen with circuit pattern.Preparation process mainly include stretching,
Degreasing, drying, stripping substrate, exposure, development, drying, colour-separation drafting and block and etc. so that slurry passes through silk screen after being scraped
Upper through-hole is transferred on substrate, forms the pattern of circuit.The slurry of silk-screen printing, dispersant are hexamethylene, surface-active material
Material is neopelex.The solid content 60% of gold nanoparticle in slurry, average diameter are 0.2 micron.Silk screen is put
Certain height more than aln surface is set, enough gold nano slurries are carried above silk screen, these slurries are scraped using scraper
When material passes through the area of the pattern on silk screen surface, a part of slurry stays in scheduled aln surface through silk screen hole, fills simultaneously
Through-hole simultaneously in aln surface forms no lead thin film circuit 5.In vacuum drying oven, sintering time is 120o10 under C
mins, 600 oCLower 15 mins.The thickness of the gold nano layer of formation is about 100 μm.The power schottky prepared with silicon carbide
For diode, diode is fixed on to the inside grooves of aln surface, the positive and negative anodes of diode are respectively in the left and right of device
Two sides.With device electrode in a plane, intermediate raceway groove needs molten using gas gold thin film layer without lead thin film circuit
Glue prints gold nanoparticle filling, forms gold thin film 7.The nano material of golden ink for aerosol printing, which is surface, oneself
The gold nanoparticle of mercapto alcohol package, dispersant is terpinol.Ultrasound waits for spout steady air current, the ejection of nano-particle after hazing
After rate substantially constant, printing can be carried out.After a period of time, raceway groove filling finishes.Mobile nozzle right movement, allows and fills
The whole circuit surface with external connection circuit of packing course covering device electrode, stops beating after the thickness of coating reaches 10 μm or more
Print, and carry out vacuum annealing process.Finally, this envelope without lead can be completed after nitrogenizing aluminum cover 6 by heat-stable ceramic glue sticking
The preparation process of assembling structure.When the electrode more than two of device, for example, when encapsulation power transistor, in circular nitrogen
Change on aluminum substrate, the distance of each through-hole of reasonable arrangement, three through-holes processed using CNC, and repeat above-mentioned bonding, printing with
After annealing process, this encapsulating structure without lead still can be obtained.
Claims (10)
1. a kind of leadless packaging structure for silicon carbide power device, it is characterised in that the encapsulating structure includes a surface
The aluminum-nitride-based bottom of circle of fluted and through-hole, silicon carbide power device, be bonded in without lead thin film circuit, one it is aluminum-nitride-based
Copper on bottom is heat sink and aluminium nitride packaged cap, and no lead thin film circuit is arranged on aluminum-nitride-based bottom and connects external circuit and carbon
The electrode of SiClx power device, silicon carbide power device are fixed in the groove on aluminum-nitride-based bottom, silicon carbide power device with
Heat-conducting glue separation layer is provided between aluminium nitride, no lead thin film circuit and silicon carbide power device are in a plane, nitrogen
Change aluminium packaged cap be arranged above copper sheet external electrode, aluminum-nitride-based bottom and copper it is heat sink between be provided with aluminium oxide bonded layer, nitrogen
Change and is bonded with copper sheet external electrode on the through-hole of aluminium substrate.
2. a kind of the above-mentioned leadless packaging structure preparation side for silicon carbide power device is prepared according to claim 1
Method, it is characterised in that it includes following steps：Step 1, hole is got through at aluminum-nitride-based bottom using numerically-controlled machine tool, and
Open a sulculus in surface；Step 2, the aluminium nitride substrate after processing is aoxidized, and utilizes DBC processes, the condition existing for oxygen
Under, it is bonded with aluminium oxide by copper is heat sink；Step 3, pickling removes extra alumina layer, exposes aln surface；Step
4, heat-stable ceramic glue sticking copper sheet is utilized near through-hole so that copper sheet covers through-hole；Step 5, silk-screen printing Gold conductor, in nitrogen
Change aluminium surface to form circuit pattern and fill through-hole, forms gold thin film circuit after sintering；Step 6, silicon carbide device is fixed on
The groove of aln surface removes air layer between device and aluminium nitride with heat-conducting glue；Step 7, Jenner is printed using aerosol
Rice material layer, couples the electrode of external circuit and device；Step 8, encapsulating structure integrally carries out annealing operation, temperature 300 ~ 400oC
Annealing, eliminates the internal stress of each interlayer；Step 9, it is bonded aluminium nitride circular lid, forms an encapsulating structure.
3. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 2, special
Sign is in the step 1 that 2 mm of diameter of through-hole, aluminum-nitride-based bottom is 2 times of silicon carbide device thickness, the depth of groove
Equal to the thickness of silicon carbide device.
4. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 3, special
Sign is in the step 2 that copper is heat sink to be bonded with the oxidation aluminium surface of unslotted, and the heat sink center line of copper and sulculus
Center line overlaps；During copper is heat sink, copper tooth surface increases heat dissipation and compares table by processing, Surface Creation copper nano-wire layer
Area；The length, width and height of copper tooth be all be twice of silicon carbide device size.
5. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 4, special
Sign is in the step 4 that bonding agent does not enter through-hole in copper sheet bonding process, and copper sheet surface seals through-hole itself；Copper sheet
After sealing through-hole, expose 2 cm other than circular package lid.
6. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 5, special
Sign is in step 5 screen printing process that the diameter of golden particle is in 0.1 ~ 0.3 μ m in gold nano-material
It is interior；The solid content 60% ~ 80% of gold nano-material, the width for forming nano gold layer are approximately equal to the width slurry of device electrode
Vacuum-sintering temperature 600 ~ 700oWithin the scope of C, sintering time is 120o10 mins under C, 600 ~ 700 oCLower 15
Then mins is naturally cooling to room temperature；The material of silk screen is steel wire, and the diameter of line is 30 μm, and the mesh number of silk screen is 200 ~ 300
Mesh；In about 80 ~ 100 μ m of gold thin film thickness of formation.
7. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 6, special
Sign is in the step 6 silicon carbide device fixation procedure, bottom device spin coating one layer of heat-conducting glue, removal devices and groove
Air layer between bottom increases heat transfer.
8. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 7, special
It levies and is in the step 7 aerosol print procedure, 1.6 g/ml of density of gold nanoparticle ink, solid content 40 ~
50%, 6 ~ 10 cP of viscosity；Coupling device electrode and the context layer of external connection circuit will cover entire device electrode, and cover outer
The gold thread for joining circuit, re-forms 10 ~ 20 μm of gold thin films more than gold thread surface.
9. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 8, special
Sign is in the annealing of step 8 encapsulating structure that heat up 2 h, 300 ~ 400o3 h of C ranges inside holding, Temperature fall 5
H amounts to 10 h, to eliminate the internal stress between each film.
10. a kind of leadless packaging structure preparation method for silicon carbide power device according to claim 9, special
Sign is in the bonding of the nitridation aluminum cover described in the step 9 that aluminium nitride lid is being nitrogenized using heat-stable ceramic glue sticking
The side wall of aluminium substrate forms the space that a closed waterproof and anti-other atmosphere enter in device and circuit surface.
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| CN109781334A (en) * | 2019-01-02 | 2019-05-21 | 西安交通大学 | A kind of leadless packaging structure and packaging method of piezoresistive transducer |
| CN111293205A (en) * | 2020-02-24 | 2020-06-16 | 东南大学 | Manufacturing method of detachable light source substrate |
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Application publication date: 20180803 |