CN208077959U - A kind of leadless packaging structure for silicon carbide power device - Google Patents
A kind of leadless packaging structure for silicon carbide power device Download PDFInfo
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- CN208077959U CN208077959U CN201820596724.0U CN201820596724U CN208077959U CN 208077959 U CN208077959 U CN 208077959U CN 201820596724 U CN201820596724 U CN 201820596724U CN 208077959 U CN208077959 U CN 208077959U
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- silicon carbide
- nitride
- power device
- aluminum
- carbide power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Abstract
The utility model provides a kind of encapsulating structure without lead for silicon carbide power device.This encapsulating structure include a surface have the aluminum-nitride-based bottom of circle of fluting and through-hole, silicon carbide power device, without lead thin film circuit, the copper being bonded on aluminum-nitride-based bottom is heat sink and aluminium nitride packaged cap.The lead not having in the utility model encapsulating structure, without the unfavorable condition for worrying open circuit, virtual connection caused by lead is possible.Moreover, aluminium nitride material is close with the thermal conductivity of silicon carbide, device is fixed in groove, does not have excessive thermal stress, ensures the reliability of device.
Description
Technical field
The utility model is related to a kind of encapsulating structure of silicon carbide power device more particularly to a kind of utilization printing technology systems
Standby inside carries copper heat sink encapsulating structure and preparation method without lead.
Background technology
Power semiconductor refers to the electronic device for being directly used in electric energy conversion or control in power circuit.Currently, work(
The main material of rate semiconductor devices is silicon.But the demand with people to electric power constantly expands, the use of Si power device
Condition has reached the limit, and researcher is promoted to find new alternative materials.Carbofrax material is third generation wide bandgap semiconductor material
Material has high critical breakdown electric field (operating voltage is high), high heat conductance, high current density and high work temperature compared with silicon materials
The advantages such as degree.High current and high working voltage mean that power is very high, and the heat release of device is very big.Under high temperature, device is easy to
Aging failure, therefore it is vital task to reduce temperature for power device.Encapsulation is extremely weighed in semiconductor devices preparation process
The step wanted.This is because encapsulation can protect device body, the Stability and dependability of device can be improved with supporting device.
Aluminium nitride has very high thermal conductivity.It is well suited for the encapsulation requirement of silicon carbide power device, and the similar thermal expansion coefficient of the two,
Excessive thermal stress is not will produce.On the other hand, often sharp in the encapsulation of silicon carbide device in order to timely and effectively radiate
With the heat sink quickening radiating rate of copper.
Printed electronics refer to the nano material using printing technology and dispersion in a solvent, form figure in the plane
The film of change ultimately forms the manufacturing process of electronic component.It compares with traditional electronic device manufacture, printed electronics
Have the characteristics that thinness, flexibility, at low cost, environmentally protective and energy utilization efficiency are high, high-volume and high-speed production may be implemented,
Effectively reduce production cost.There are many printing technology that can be used for printed electronic, for example, silk-screen printing, inkjet printing, R2R (volumes pair
Volume) technologies such as printing, intaglio printing and aerosol printing, they have a report and document for preparing electronic component, but it
Have their own advantages with it is insufficient.For example, silk-screen printing can be in certain area, the pattern of the height such as quick formation, but it is uncomfortable
It shares in connection line and line.This is because silk-screen printing is contact printing, it is possible to destroy already existing pattern.Ink-jet is beaten
The operation of print is most easy, but since the solvent in ink can form the cricoid residual of coffee, and the printing of ink drop by drop,
The rate for forming pattern is slower.R2R prints and intaglio printing is more suitable for being printed on flexible substrates surface.In contrast, gas
Colloidal sol printing is to deliver nano-particle using aerosol, is contactless printing, is more suitable for coupling device electrode and external connection
Circuit will not destroy the surface texture of device.
Invention content
The bad feelings that the purpose of this utility model is to provide a kind of without worrying open circuit, virtual connection caused by lead is possible
Condition does not have excessive thermal stress, ensures the leadless packaging structure for silicon carbide power device of device reliability.
What the purpose of this utility model was realized in：The encapsulating structure includes the fluted circle with through-hole in a surface
Aluminum-nitride-based bottom, silicon carbide power device, without lead thin film circuit, the copper being bonded on aluminum-nitride-based bottom is heat sink and nitridation
Aluminium packaged cap, no lead thin film circuit are arranged on aluminum-nitride-based bottom and connect the electricity of external circuit and silicon carbide power device
Pole, silicon carbide power device are fixed in the groove on aluminum-nitride-based bottom, are provided between silicon carbide power device and aluminium nitride
Heat-conducting glue separation layer, with silicon carbide power device in a plane, aluminium nitride packaged cap is arranged no lead thin film circuit
Above copper sheet external electrode, aluminum-nitride-based bottom and copper it is heat sink between be provided with aluminium oxide bonded layer, on the through-hole at aluminum-nitride-based bottom
It is bonded with copper sheet external electrode.
Hole is got through in aluminum-nitride-based bottom surface fluting first with numerically-controlled machine tool (CNC) when prepared by the utility model,
Aluminium nitride is reheated, one layer of alumina layer is prepared on aluminium nitride material surface；Utilize Direct bond copper
Technology (DBC) method, the alumina layer planar section heat sink with copper is bonded, and forms a complex structure；Again
Utilize the method for pickling, the removal nitridation remaining alumina layer of aluminum soleplate；Ceramic glue sticking copper sheet is utilized around through-hole so that
Copper sheet seals through-hole；With the circuit pattern of silk-screen printing and through-hole is filled again, the nano material in slurry is gold nano grain, is moved back
After fire evaporation solvent, re-sinter to form nano-Au films circuit；Silicon carbide power device is put into groove to fixed, device electrode
With the raceway groove between external connection circuit, it is filled using aerosol printing gold nano-material, connection is completed after annealing；Finally, sharp
With ceramic glue sticking aluminium nitride cap, the preparation process of encapsulating structure is completed.
The utility model also has some features in this way：
1,2 mm of diameter of the through-hole, aluminum-nitride-based bottom are 2 times of silicon carbide device thickness, and the depth of sulculus is equal to
The thickness of silicon carbide device ensures the gold thin film of the electrode of device and the external connection circuit of aln surface in sustained height.
2, the heat sink center line of the copper is overlapped with small groove center line.
3, the copper sheet exposes 2 cm other than circular package lid.
4, side wall of the aluminium nitride lid by heat-stable ceramic glue sticking at aluminum-nitride-based bottom, in device and circuit table
Face forms the space that a closed waterproof and anti-other atmosphere enter.
The beneficial effects of the utility model have：
1, aluminium nitride with copper heat sink be to be bonded, generate new compound, and form chemical bond.Therefore, Bi Liyong
Interface Heat Conduction Material removal air layer is more advantageous to hot transmission.
2, copper heat sink surface is also to have nano thread structure covering, can also increase the heat sink heat dissipation specific surface area of copper, is improved
Heat dissipation effect in air.
3, using silk-screen printing and aerosol printing two methods be used in combination, while taken into account circuit formation efficiency with couple
Safety and reliability when device ensures that device surface is not destroyed or disturbs.
4, the lead not having in this encapsulating structure, without the unfavorable condition for worrying open circuit, virtual connection caused by lead is possible.
Moreover, aluminium nitride material is close with the thermal conductivity of silicon carbide, device is fixed in groove, does not have excessive thermal stress, ensures
The reliability of device.
Description of the drawings
Fig. 1 is the schematic diagram of silicon carbide power device encapsulating structure.
Specific implementation mode
Embodiment 1
The utility model is described further with reference to the accompanying drawings and detailed description：
In conjunction with Fig. 1, the present embodiment encapsulating structure, which includes a surface, fluting and the aluminium nitride circular-base 1 of through-hole, carbon
SiClx power device 4, without 5, copper being bonded on aluminum-nitride-based bottom heat sink 2 of lead thin film circuit and aluminium nitride packaged cap
6.No lead thin film circuit is arranged on aluminum-nitride-based bottom and connects the electrode of external circuit and silicon carbide power device, silicon carbide work(
Rate device is fixed in the groove on aluminum-nitride-based bottom, and heat-conducting glue is provided between silicon carbide power device and aluminium nitride and is isolated
Layer, with silicon carbide power device in a plane, aluminium nitride packaged cap is arranged in copper sheet dispatch from foreign news agency no lead thin film circuit
Above pole, aluminum-nitride-based bottom and copper it is heat sink between be provided with aluminium oxide bonded layer, be bonded with copper sheet on the through-hole at aluminum-nitride-based bottom
External electrode 3.
During preparing copper nano-wire, copper is heat sink 2 surfaces carry the polymer baffle of nano-pore, can be by self assembly side
It is prepared by method.For example, molecule Na-GA3C11 can be utilized, it is self-assembly of the monomer with nanostructure.By ultraviolet light
Afterwards, monomer polymerization is formed with the film baffle arrangement of nano-pore.First, copper is heat sink successively with acetone, ethyl alcohol and deionized water
It is cleaned, removes the organic matter layer on surface.Then, by nanostructured monomers, dispersion in aqueous solution, forms suspension, and
With ultrasonic vibration so that powder dispersion is uniform.This suspension is drawn with rubber head dropper, score time instills the heat sink sawtooth of copper
Adsorption on Surface.After ultraviolet light, the polymer baffle film with nano-pore is formed.By the heat sink immersion electrolysis of this copper
In liquid, electrolyte is 0.1 M CuSO4 + 1 M H2SO4Mixed solution.Couple copper heat sink electrode and CHI660D electrochemistry works
It stands, reference electrode Ag/AgCl, to electrode platinum piece.Using cyclic voltammetry, made in the nano-pore of polymer baffle
Standby copper nano-wire.After the preparation for completing copper nano-wire, heat sink with copper nano-wire is put into electric furnace, 300oC anneals
2 hours, while annealing nanowires, burn out polymer baffle.
On 1 surface of aluminum-nitride-based bottom two through-holes and a groove structure are prepared using CNC.When processing through-hole, to process
After certain depth, is processed from other one side, get through hole in middle section, prevent aluminium nitride ceramics material fragmentation.By aluminium nitride
Bottom plate is put into electric furnace, is heated to 1200oC, keeps temperature 8 hours, and one layer of alumina layer is prepared in aln surface.It carries out
DBC bonding operations, aluminium oxide generate CuAlO with copper4Compound layer, nitridation aluminum soleplate with copper is heat sink forms complex.Again
Using acid solution, the remaining alumina layer of complex surfaces is removed, exposes aln surface.Two copper sheets are covered in through-hole table
Face is around cemented with ceramic glue, forms two copper sheet external electrodes 3.
In screen printing process, first have to prepare the printing screen with circuit pattern.Preparation process mainly include stretching,
Degreasing, drying, stripping substrate, exposure, development, drying, colour-separation drafting and block and etc. so that slurry passes through silk screen after being scraped
Upper through-hole is transferred on substrate, forms the pattern of circuit.The slurry of silk-screen printing, dispersant are hexamethylene, surface-active material
Material is neopelex.The solid content 60% of gold nanoparticle in slurry, average diameter are 0.2 micron.Silk screen is put
Certain height more than aln surface is set, enough gold nano slurries are carried above silk screen, these slurries are scraped using scraper
When material passes through the area of the pattern on silk screen surface, a part of slurry stays in scheduled aln surface through silk screen hole, fills simultaneously
Through-hole simultaneously in aln surface forms no lead thin film circuit 5.In vacuum drying oven, sintering time is 120o10 under C
mins, 600 oCLower 15 mins.The thickness of the gold nano layer of formation is about 100 μm.The power schottky prepared with silicon carbide
For diode, diode is fixed on to the inside grooves of aln surface, the positive and negative anodes of diode are respectively in the left and right of device
Two sides.With device electrode in a plane, intermediate raceway groove needs molten using gas gold thin film layer without lead thin film circuit
Glue prints gold nanoparticle filling, forms gold thin film 7.The nano material of golden ink for aerosol printing, which is surface, oneself
The gold nanoparticle of mercapto alcohol package, dispersant is terpinol.Ultrasound waits for spout steady air current, the ejection of nano-particle after hazing
After rate substantially constant, printing can be carried out.After a period of time, raceway groove filling finishes.Mobile nozzle right movement, allows and fills
The whole circuit surface with external connection circuit of packing course covering device electrode, stops beating after the thickness of coating reaches 10 μm or more
Print, and carry out vacuum annealing process.Finally, this envelope without lead can be completed after nitrogenizing aluminum cover 6 by heat-stable ceramic glue sticking
The preparation process of assembling structure.When the electrode more than two of device, for example, when encapsulation power transistor, in circular nitrogen
Change on aluminum substrate, the distance of each through-hole of reasonable arrangement, three through-holes processed using CNC, and repeat above-mentioned bonding, printing with
After annealing process, this encapsulating structure without lead still can be obtained.
Claims (5)
1. a kind of leadless packaging structure for silicon carbide power device, it is characterised in that the encapsulating structure includes a surface
The aluminum-nitride-based bottom of circle of fluted and through-hole, silicon carbide power device, be bonded in without lead thin film circuit, one it is aluminum-nitride-based
Copper on bottom is heat sink and aluminium nitride packaged cap, and no lead thin film circuit is arranged on aluminum-nitride-based bottom and connects external circuit and carbon
The electrode of SiClx power device, silicon carbide power device are fixed in the groove on aluminum-nitride-based bottom, silicon carbide power device with
Heat-conducting glue separation layer is provided between aluminium nitride, no lead thin film circuit and silicon carbide power device are in a plane, nitrogen
Change aluminium packaged cap be arranged above copper sheet external electrode, aluminum-nitride-based bottom and copper it is heat sink between be provided with aluminium oxide bonded layer, nitrogen
Change and is bonded with copper sheet external electrode on the through-hole of aluminium substrate.
2. a kind of leadless packaging structure for silicon carbide power device according to claim 1, it is characterised in that institute
2 mm of diameter for the through-hole stated, aluminum-nitride-based bottom are 2 times of silicon carbide device thickness, and the depth of sulculus is equal to silicon carbide device
Thickness.
3. a kind of leadless packaging structure for silicon carbide power device according to claim 2, it is characterised in that institute
The heat sink center line of copper stated is overlapped with small groove center line.
4. a kind of leadless packaging structure for silicon carbide power device according to claim 3, it is characterised in that institute
The copper sheet stated exposes 2 cm other than circular package lid.
5. a kind of leadless packaging structure for silicon carbide power device according to claim 4, it is characterised in that institute
Side wall of the aluminium nitride lid stated by heat-stable ceramic glue sticking at aluminum-nitride-based bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820596724.0U CN208077959U (en) | 2018-04-25 | 2018-04-25 | A kind of leadless packaging structure for silicon carbide power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820596724.0U CN208077959U (en) | 2018-04-25 | 2018-04-25 | A kind of leadless packaging structure for silicon carbide power device |
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| Publication Number | Publication Date |
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| CN208077959U true CN208077959U (en) | 2018-11-09 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364913A (en) * | 2018-04-25 | 2018-08-03 | 哈尔滨奥瑞德光电技术有限公司 | A kind of leadless packaging structure and preparation method for silicon carbide power device |
| CN111293205A (en) * | 2020-02-24 | 2020-06-16 | 东南大学 | Manufacturing method of detachable light source substrate |
| CN113193052A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
-
2018
- 2018-04-25 CN CN201820596724.0U patent/CN208077959U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364913A (en) * | 2018-04-25 | 2018-08-03 | 哈尔滨奥瑞德光电技术有限公司 | A kind of leadless packaging structure and preparation method for silicon carbide power device |
| CN111293205A (en) * | 2020-02-24 | 2020-06-16 | 东南大学 | Manufacturing method of detachable light source substrate |
| CN111293205B (en) * | 2020-02-24 | 2021-07-13 | 东南大学 | Manufacturing method of detachable light source substrate |
| CN113193052A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
| CN113193052B (en) * | 2021-04-29 | 2023-02-14 | 东莞市佳骏电子科技有限公司 | Silicon carbide diode with large conduction current |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210616 Address after: 150001 No. 357, West Da Zhi street, Nangang District, Harbin, Heilongjiang. Patentee after: HARBIN LIUXIA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 150001 No. 357, West Da Zhi street, Nangang District, Harbin, Heilongjiang. Patentee before: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |