CN206236669U - Substrate and SPM - Google Patents
Substrate and SPM Download PDFInfo
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- CN206236669U CN206236669U CN201621282181.2U CN201621282181U CN206236669U CN 206236669 U CN206236669 U CN 206236669U CN 201621282181 U CN201621282181 U CN 201621282181U CN 206236669 U CN206236669 U CN 206236669U
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- 239000000758 substrate Substances 0.000 title claims abstract description 162
- 239000010954 inorganic particle Substances 0.000 claims abstract description 78
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 66
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 59
- 239000002245 particle Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 230000021615 conjugation Effects 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 36
- 239000000463 material Substances 0.000 description 31
- 239000004411 aluminium Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 21
- 210000000498 stratum granulosum Anatomy 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- 230000035882 stress Effects 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000003475 lamination Methods 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 238000010923 batch production Methods 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006701 autoxidation reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The utility model provides a kind of substrate and SPM, wherein, substrate includes：Substrate body；Alloy circuit wiring layer, located at the positive side of the substrate body；Inorganic particles, adhere to the dorsal part of substrate body.By technical solutions of the utility model, the conjugation of substrate and plastic shell is improve, improve the reliability of packaging.
Description
Technical field
The utility model is related to technical field of semiconductors, in particular to a kind of substrate and a kind of SPM.
Background technology
SPM, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive device (Deriver Integrated Circuit, i.e. Driver IC) that road technique is combined.Due to collecting with height
The advantages such as Cheng Du, high reliability, win increasing market, are particularly suitable for the frequency converter and various inversions electricity of motor
Source, is the conventional power electronic devices of frequency control, metallurgical machinery, electric propulsion, servo-drive and frequency-conversion domestic electric appliances.
SPM heating is larger, it is therefore desirable to which good heat dissipation design is normal in industry to solve integrity problem
The way seen is fin to be set on packaging body and by radiating fin exposed outside, belongs to half encapsulating structure.At present, metal base circuit board
Widely used as power device insulating radiation component, these wiring board plates are general by metal substrate, insulating barrier, three layers of Copper Foil
Structure composition, wherein in the majority with inexpensive, light weight aluminium base.
In correlation technique, the aluminum-based circuit board for being encapsulated in inside modules is easily subject to from encapsulating material in a humidity environment
The corrosion of intermediate ion, makes to be layered between wiring board and encapsulating material, causes integrity problem.
For solving aluminium base etching problem, circuit board industry is used after generally oxygenizing aluminium base plate is processed, but after oxidation
Aluminium base and encapsulating material between still suffer from adhesion difference problem.At present, there is the processing method to aluminium base roughening in industry
Including wire drawing and sandblasting.But for the aluminium base with alumina layer, these methods are not applied to simultaneously, on the one hand, wire drawing destroys oxygen
Change Rotating fields, have impact on anticorrosion ability, on the other hand, sandblasting is difficult to be roughened hardness alumina layer higher.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art or correlation technique.
Therefore, a purpose of the present utility model is to propose a kind of substrate.
Another purpose of the present utility model is to propose a kind of preparation method of substrate.
Another purpose of the present utility model is to propose a kind of SPM.
To achieve the above object, according to the embodiment of first aspect of the present utility model, it is proposed that a kind of substrate, including：
Substrate body；Alloy circuit wiring layer, located at the positive side of the substrate body；Inorganic particles, adhere to the substrate body
Dorsal part.
According to the substrate of embodiment of the present utility model, adhere to form inorganic particles by the dorsal part of substrate body,
The roughness of substrate is improve, namely improves the adhesion between substrate body and encapsulating material, further, since inorganic particles are logical
Often possess high heat endurance, therefore, the high temperature radiating of the high-temperature technology and power device of semiconductor fabrication processes will not
The shape of inorganic particles or membrane stress is caused to occur significantly to change, further, the thermal stress of inorganic particles is small,
And heat transfer efficiency is high, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve the radiating efficiency of power device.
Wherein, the preparation process of inorganic particles is compatible with standard CMOS process or other sophisticated semiconductor work flows,
Therefore, it is suitable to batch production and popularization and application.
According to the substrate of above-described embodiment of the present utility model, there can also be following technical characteristic：
Preferably, substrate body is aluminum substrate.
According to the substrate of embodiment of the present utility model, by setting substrate body for aluminum substrate, on the one hand, due to aluminium
Molecular weight is only 26.98, therefore, the characteristics of aluminum substrate possesses light, on the other hand, because the thermal conductivity of aluminium is 217.7W/
Mk, therefore, aluminum substrate possesses high heat conductivility, and the third aspect, the process compatible degree of aluminum substrate is high, preparation method letter
It is single, therefore, help to reduce the production cost of semiconductor devices.
Preferably, substrate body includes：The alumina layer and insulating barrier being combined successively, the oxide layer are formed at the aluminium
The surface of matter substrate.
According to the substrate of embodiment of the present utility model, by be combined successively and alumina layer by graphical treatment and
Insulating barrier, wherein, alumina layer can be that chemical deposition formation or autoxidation are formed, and after inorganic particles are adhered to, possess
Extremely low membrane stress, is provided simultaneously with high reliability and compactness, wherein, alloy wiring layer can be copper clad layers, due to
Copper clad layers are corrosion-resistant, as the line layer of substrate, help to lift the reliability of semiconductor circuit.
Preferably, the thickness range of alumina layer is 1~20 micron.
Preferably, the thickness of alumina layer is 10 microns.
Preferably, inorganic particles are including in alumina particle, silicon-carbide particle, silicon oxide particle and silicon nitride particle
At least one inorganic particle.
According to the substrate of embodiment of the present utility model, alumina particle, carborundum are included by setting inorganic particles
At least one inorganic particle in particle, silicon oxide particle and silicon nitride particle, above-mentioned inorganic particles can improve substrate
Surface roughness, and then the adhesion between substrate and encapsulating material is improved, further, since the heat endurance of above-mentioned inorganic particle is high
With it is corrosion-resistant, therefore, increasing above-mentioned inorganic particles will not deteriorate the surface stress of substrate and the reliability of encapsulating products.
Preferably, the roughness range of inorganic particles is 1~500 micron.
According to the embodiment of second aspect of the present utility model, it is proposed that a kind of preparation method of substrate, including：In substrate
The positive side of body forms alloy circuit wiring layer；Inorganic particles are formed in the dorsal part of the substrate body, to complete the base
The preparation of plate.
The preparation method of the substrate according to embodiment of the present utility model, adheres to form nothing by the dorsal part of substrate body
Machine stratum granulosum, improves the roughness of substrate, namely improves the adhesion between substrate body and encapsulating material, further, since nothing
Machine stratum granulosum is generally configured with high heat endurance, therefore, the high-temperature technology of semiconductor fabrication processes and the high temperature of power device
Radiating will not cause the shape of inorganic particles or membrane stress to occur significantly to change, further, inorganic particles
Thermal stress it is small, and heat transfer efficiency is high, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve power device
Radiating efficiency.
Wherein, the preparation process of inorganic particles is compatible with standard CMOS process or other sophisticated semiconductor work flows,
Therefore, it is suitable to batch production and popularization and application.
Preferably, the positive side in substrate body forms alloy circuit wiring layer, specifically includes following steps：In the substrate
The surface of body forms alumina layer, and insulating barrier is formed on the alumina layer of the positive side of the substrate body, and by plating
Technique forms copper clad layers；Inorganic particles are formed on the alumina layer of the dorsal part of the substrate body.
The preparation method of the substrate according to embodiment of the present utility model, by successively be combined and by graphical treatment
Alumina layer and insulating barrier, wherein, alumina layer can be that chemical deposition formation or autoxidation are formed, in adhesion inorganic particle
After layer, possess extremely low membrane stress, be provided simultaneously with high reliability and compactness, and alloy circuit wiring layer can be covered
Layers of copper, because copper clad layers are corrosion-resistant, as the line layer of substrate, helps to lift the reliability of semiconductor circuit.
Preferably, inorganic particles are formed on the alloy circuit wiring layer, to complete the preparation of the substrate, specifically
Comprise the following steps：Chemical adhesive is coated on the alumina layer of the dorsal part of the aluminum oxide, and inorganic particle is interspersed among
The surface of the chemical adhesive；Place is toasted, cleaned and dried to substrate body to being stained with the inorganic particle successively
Reason, to solidify to form the inorganic particles.
The preparation method of the substrate according to embodiment of the present utility model, in the chemical adhesive of surface coating of aluminum oxide,
And inorganic particle is interspersed among the surface of chemical adhesive, to adhere to alumina layer, and to being stained with the base of inorganic particle
Plate body is toasted successively, washing and drying treatment, and to solidify to form inorganic particles, above-mentioned inorganic particles can be improved
The surface roughness of substrate, and then the adhesion between substrate and encapsulating material is improved, further, since the heat of above-mentioned inorganic particle is steady
It is qualitative high and corrosion-resistant, therefore, increasing above-mentioned inorganic particles will not deteriorate the surface stress of substrate and the reliability of encapsulating products
Property.
According to the embodiment of the third aspect of the present utility model, it is proposed that a kind of SPM, including：Substrate, such as
Substrate described in above-mentioned any one of first aspect technical scheme, or be prepared from using the preparation method such as second aspect；Power
Device, is welded in the first designated area of the positive side of substrate.
According to the SPM of embodiment of the present utility model, adhere to form inorganic by the dorsal part of substrate body
Stratum granulosum, improves the roughness of substrate, namely improves the adhesion between substrate body and encapsulating material, further, since inorganic
Stratum granulosum is generally configured with high heat endurance, therefore, the high-temperature technology of semiconductor fabrication processes and the high temperature of power device dissipate
Heat will not cause the shape of inorganic particles or membrane stress to occur significantly to change, further, inorganic particles
Thermal stress is small, and heat transfer efficiency is high, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve dissipating for power device
The thermal efficiency, and then improve the reliability of SPM.
Wherein, the preparation process of inorganic particles is compatible with standard CMOS process or other sophisticated semiconductor work flows,
Therefore, it is suitable to batch production and popularization and application.
Preferably, also include：Metal connecting line, be connected to the positive side of the power device and substrate specified second specifies area
Domain.
Preferably, also include：Package casing, is coated on substrate, metal connecting line and power device entirely.
The preparation method of the substrate according to embodiment of the present utility model, by set package casing be coated on full substrate,
Metal connecting line and power device, help to reduce influence of the electromagnetic interference to SPM, simultaneously as substrate possesses height
Roughness, improve the adhesion between substrate and package casing.
Additional aspect of the present utility model and advantage will be set forth in part in the description, partly by from following description
In become obvious, or by it is of the present utility model practice recognize.
Brief description of the drawings
Of the present utility model above-mentioned and/or additional aspect and advantage will from description of the accompanying drawings below to embodiment is combined
Become substantially and be readily appreciated that, wherein：
Fig. 1 shows the schematic diagram of the substrate according to embodiment of the present utility model；
Fig. 2 shows the schematic flow diagram of the embodiment one according to the preparation method of substrate of the present utility model；
Fig. 3 shows the schematic diagram of the embodiment two according to the preparation method of substrate of the present utility model；
Fig. 4 shows the schematic diagram of the SPM according to embodiment of the present utility model.
Specific embodiment
In order to be more clearly understood that above-mentioned purpose of the present utility model, feature and advantage, below in conjunction with the accompanying drawings and tool
Body implementation method is further described in detail to the utility model.It should be noted that in the case where not conflicting, this Shen
Feature in embodiment please and embodiment can be mutually combined.
Many details are elaborated in the following description in order to fully understand the utility model, but, this practicality
It is new to be different from other modes described here using other to implement, therefore, protection domain of the present utility model is simultaneously
Do not limited by following public specific embodiment.
Fig. 1 shows the schematic diagram of the substrate according to embodiment of the present utility model.
As shown in figure 1, the substrate according to embodiment of the present utility model includes：Substrate body 102；Alloy circuit wiring layer
110, located at the positive side of the substrate body 102；Inorganic particles 106, adhere to the dorsal part of the substrate body 102.
According to the substrate of embodiment of the present utility model, adhere to form nothing by the dorsal part of alloy circuit wiring layer 110
Machine stratum granulosum 106, improves the roughness of substrate, namely improves the adhesion between substrate body 102 and encapsulating material 116, separately
Outward, because inorganic particles 106 are generally configured with high heat endurance, therefore, the high-temperature technology and work(of semiconductor fabrication processes
The high temperature radiating of rate device 112 will not cause the shape of inorganic particles 106 or membrane stress to occur significantly to change, and more enter
One step ground, the thermal stress of inorganic particles 106 is small, and heat transfer efficiency is high, therefore, contribute between substrate and encapsulating material 116
Heat transfer, to improve the radiating efficiency of power device 112.
Wherein, the preparation process of inorganic particles 106 is compatible with standard CMOS process or other sophisticated semiconductor processing streams
Journey, therefore, it is suitable to batch production and popularization and application.
According to the substrate of above-described embodiment of the present utility model, there can also be following technical characteristic：
Preferably, substrate body 102 is aluminum substrate.
According to the substrate of embodiment of the present utility model, by setting substrate body 102 for aluminum substrate, on the one hand, by
In aluminium molecular weight be only 26.98, therefore, the characteristics of aluminum substrate possesses light, on the other hand, because the thermal conductivity of aluminium is
217.7W/mk, therefore, aluminum substrate possesses high heat conductivility, and the third aspect, the process compatible degree of aluminum substrate is high, system
Make method simple, therefore, help to reduce the production cost of semiconductor devices.
Preferably, substrate body 102 includes：Alumina layer (the positive side alumina layer 104A as shown in Figure 1 being combined successively
With back side oxide aluminium lamination 104B as shown in Figure 1) and insulating barrier 108, the oxide layer is formed at the surface of the aluminum substrate.
According to the substrate of embodiment of the present utility model, by being combined successively and by the alumina layer of graphical treatment
(positive side alumina layer 104A and back side oxide aluminium lamination 104B as shown in Figure 1 as shown in Figure 1) and insulating barrier 108, wherein, oxygen
It can be chemical shallow lake to change aluminium lamination (positive side alumina layer 104A and back side oxide aluminium lamination 104B as shown in Figure 1 as shown in Figure 1)
Product is formed or autoxidation is formed, and after inorganic particles 106 are adhered to, possesses extremely low membrane stress, is provided simultaneously with high
Reliability and compactness, wherein, alloy wiring layer can be copper clad layers, because copper clad layers are corrosion-resistant, as the line layer of substrate,
Contribute to the reliability of lifting semiconductor circuit.
Preferably, alumina layer (positive side alumina layer 104A and back side oxide aluminium lamination as shown in Figure 1 as shown in Figure 1
Thickness range 104B) is 1~20 micron.
Preferably, alumina layer (positive side alumina layer 104A and back side oxide aluminium lamination as shown in Figure 1 as shown in Figure 1
Thickness 104B) is 10 microns.
Preferably, inorganic particles 106 include alumina particle, silicon-carbide particle, silicon oxide particle and silicon nitride particle
In at least one inorganic particle.
According to the substrate of embodiment of the present utility model, alumina particle, carbonization are included by setting inorganic particles 106
At least one inorganic particle in silicon grain, silicon oxide particle and silicon nitride particle, above-mentioned inorganic particles 106 can improve base
The surface roughness of plate, and then the adhesion between substrate and encapsulating material 116 is improved, further, since the heat of above-mentioned inorganic particle
Stability is high and corrosion-resistant, therefore, increasing above-mentioned inorganic particles 106 will not deteriorate the surface stress and encapsulating products of substrate
Reliability.
Preferably, the roughness range of inorganic particles 106 is 1~500 micron.
Fig. 2 shows the schematic flow diagram of the embodiment one according to the preparation method of substrate of the present utility model.
Fig. 3 shows the schematic diagram of the embodiment two according to the preparation method of substrate of the present utility model.
With reference to Fig. 2 and Fig. 3 to the various embodiments of the preparation method of the substrate according to embodiment of the present utility model
Illustrate.
Embodiment one：
As shown in Fig. 2 the preparation method of the substrate according to embodiment of the present utility model, including：Step 202, in substrate
The positive side of body forms alloy circuit wiring layer；Inorganic particles are formed in the dorsal part of the substrate body, to complete the base
The preparation of plate.
The preparation method of the substrate according to embodiment of the present utility model, adheres to form nothing by the dorsal part of substrate body
Machine stratum granulosum, improves the roughness of substrate, namely improves the adhesion between substrate body and encapsulating material, further, since nothing
Machine stratum granulosum is generally configured with high heat endurance, therefore, the high-temperature technology of semiconductor fabrication processes and the high temperature of power device
Radiating will not cause the shape of inorganic particles or membrane stress to occur significantly to change, further, inorganic particles
Thermal stress it is small, and heat transfer efficiency is high, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve power device
Radiating efficiency.
Wherein, the preparation process of inorganic particles is compatible with standard CMOS process or other sophisticated semiconductor work flows,
Therefore, it is suitable to batch production and popularization and application.
Embodiment two：
As shown in Figure 3, it is preferable that form alloy circuit wiring layer in the positive side of substrate body, specifically include following steps：
Step 302, alumina layer is formed on the surface of the substrate body, is formed on the alumina layer of the positive side of the substrate body
Insulating barrier, and copper clad layers are formed by electroplating technology；Step 304, forms on the alumina layer of the dorsal part of the substrate body
Inorganic particles.
The preparation method of the substrate according to embodiment of the present utility model, by successively be combined and by graphical treatment
Alumina layer and insulating barrier, wherein, alumina layer can be that chemical deposition formation or autoxidation are formed, in adhesion inorganic particle
After layer, possess extremely low membrane stress, be provided simultaneously with high reliability and compactness, and alloy circuit wiring layer can be covered
Layers of copper, because copper clad layers are corrosion-resistant, as the line layer of substrate, helps to lift the reliability of semiconductor circuit.
Preferably, inorganic particles are formed on the alloy circuit wiring layer, to complete the preparation of the substrate, specifically
Comprise the following steps：Chemical adhesive is coated on the alumina layer of the dorsal part of the aluminum oxide, and inorganic particle is interspersed among
The surface of the chemical adhesive；Place is toasted, cleaned and dried to substrate body to being stained with the inorganic particle successively
Reason, to solidify to form the inorganic particles.
The preparation method of the substrate according to embodiment of the present utility model, in the chemical adhesive of surface coating of aluminum oxide,
And inorganic particle is interspersed among the surface of chemical adhesive, to adhere to alumina layer, and to being stained with the base of inorganic particle
Plate body is toasted successively, washing and drying treatment, and to solidify to form inorganic particles, above-mentioned inorganic particles can be improved
The surface roughness of substrate, and then the adhesion between substrate and encapsulating material is improved, further, since the heat of above-mentioned inorganic particle is steady
It is qualitative high and corrosion-resistant, therefore, increasing above-mentioned inorganic particles will not deteriorate the surface stress of substrate and the reliability of encapsulating products
Property.
Fig. 4 shows the schematic diagram of the SPM according to embodiment of the present utility model.
SPM according to embodiment of the present utility model includes implementation below：
Embodiment one：
As shown in figure 4, according to the SPM of embodiment of the present utility model, including：Substrate, such as above-mentioned first party
Substrate (on the basis of embodiment as shown in Figure 1) described in any one technical scheme of face, or using substrate as shown in Figure 2
Preparation method is prepared from；Power device 112, is welded in the first designated area of the positive side of substrate.
According to the SPM of embodiment of the present utility model, adhere to form inorganic by the dorsal part of substrate body
Stratum granulosum, improves the roughness of substrate, namely improves the adhesion between substrate body and encapsulating material, further, since inorganic
Stratum granulosum is generally configured with high heat endurance, therefore, the high-temperature technology of semiconductor fabrication processes and the high temperature of power device 112
Radiating will not cause the shape of inorganic particles or membrane stress to occur significantly to change, further, inorganic particles
Thermal stress it is small, and heat transfer efficiency is high, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve power device 112
Radiating efficiency, and then improve the reliability of SPM.
Wherein, the preparation process of inorganic particles is compatible with standard CMOS process or other sophisticated semiconductor work flows,
Therefore, it is suitable to batch production and popularization and application.
Preferably, also include：Metal connecting line 114, is connected to the second finger of the positive side of the power device 112 and substrate specified
Determine region.
Preferably, also include：Package casing (encapsulating material 116 as shown in Figure 1 is formed), is coated on substrate, metal and connects entirely
Line 114 and power device 112.
The preparation method of the substrate according to embodiment of the present utility model, by setting package casing (bag as shown in Figure 1
Envelope material 116 is formed) substrate, metal connecting line 114 and power device 112 are coated on entirely, help to reduce electromagnetic interference to intelligent work(
The influence of rate module, simultaneously as substrate possesses roughness high, improves the adhesion between substrate and package casing.
Embodiment two：
SPM according to embodiment of the present utility model includes：Aluminum-based circuit board and aluminum-based circuit board is carried out
The package casing of total incapsulation.Wherein, aluminum-based circuit board it include the stratum granulosum, first anode alumina layer, the fine aluminium that set gradually
Layer, second plate alumina layer, thermally conductive insulating layer and line layer and the electronic component and lead frame that are welded on line layer.
Wherein, the thickness of thermally conductive insulating layer is 100 microns, and first anode alumina layer and second plate alumina layer are distinguished
It it is 10 microns, particle bed roughness is 100 microns.
Preparation method according to SPM of the present utility model proposes implementation below：
With reference to shown in Fig. 1 and Fig. 4, in following examples one and embodiment two, aluminum-based circuit board is substrate body 102
A kind of implementation method, first anode alumina layer is the alumina layer 104B of dorsal part, and second plate alumina layer is positive side
Alumina layer 104A, stratum granulosum is inorganic particles 106, and thermally conductive insulating layer is a kind of implementation method of insulating barrier 108,
Electrolytic copper foil is a kind of implementation method of alloy circuit wiring layer 110, and electronic component is a kind of embodiment party of power device 112
Formula, lead frame is metal connecting line 114, and SPM also includes in addition：Encapsulating material 116 and pin 118.
Embodiment one：
Preparation method according to SPM of the present utility model includes：
Step S01. will carry the aluminum layer and thermally conductive insulating layer of first anode alumina layer and second plate alumina layer
Electrolytic copper foil, the hot binding in hot pressing machine is prepared into single sided copper clad aluminium base；
Step S02. soaks the single sided copper clad aluminium base in chemical medicinal liquid, with the electricity that thermally conductive insulating layer is combined
Solution Copper Foil is etched into line layer according to certain pattern；
Chemical adhesive is sprayed in the first anode alumina layer surface of single-sided aluminum-base plate by step S03., then by inorganic powder
Particle is uniformly arranged on glue surface, and after high-temperature baking, ultrasonic wave cleaning is dried, and stratum granulosum is formed, so as to obtain aluminium base circuit
Plate；
Corresponding electronic component and lead frame are welded with step S04. line layers；
Be positioned over the aluminum-based circuit board with lead frame and electronic component in encapsulating mould by step S05., by ring
In oxygen encapsulating material injection mould, SPM is obtained.
Specifically, in above-mentioned steps S01 first anode alumina layer, aluminum layer, second plate alumina layer, heat conduction are exhausted
Each part such as edge layer as described above, in order to save length, will not be repeated here.
In above-mentioned steps S02, Copper Foil aluminium base is covered using chemical medicinal liquid corrosion single-face, with the electricity that thermally conductive insulating layer is combined
Solution Copper Foil is etched into line layer according to certain pattern.
In above-mentioned steps S03, stratum granulosum is prepared；
In above-mentioned steps S04, encapsulating material is it is preferable to be epoxy encapsulating material.It is of course also possible to according to actual life
The need for product, from other encapsulating materials of this area.
In above-mentioned steps S05, aluminum-based circuit board is encapsulated using encapsulating material：Step S04 preparations are carried using encapsulating material
The aluminum-based circuit board of lead frame and electronic component is packaged.
The preparation of above-mentioned stratum granulosum bonds inorganic powder grains and gets using chemical adhesive, can not only effectively protect the
The completion of one anodic aluminum oxide layer, and can cause that there is certain roughness in alumina layer outer surface, effectively overcome existing oxygen
Change the roughening difficulty of aluminium lamination and cause the technical problem of adhesion difference, between the effective lifting of coarse stratum granulosum and package casing
Adhesion.
The SPM due to from aluminum-based circuit board mentioned above as aluminum-based circuit board, therefore, the aluminium base
Adhesion between wiring board and package casing is strong, with reference to both rear not stratified, does not ftracture, and exactly both excellent adhesions make
The heat dispersion that electronic component is encapsulated entirely is more excellent.Meanwhile, the first anode alumina layer of aluminum-based circuit board is not corroded completely
And destruction, therefore, aluminum-based circuit board corrosion resistance is strong.
Exactly strong with the adhesion between aluminum-based circuit board and package casing, heat dispersion is more excellent, and aluminum-based circuit board is resistance to
Corrosivity is strong so that the combined reliability of electronic component is relatively existing to be obviously improved.
Embodiment two：
Preparation method according to SPM of the present utility model includes：
(1) by the electrolysis of aluminum layer and thermally conductive insulating layer with first anode alumina layer and second plate alumina layer
Copper Foil, the hot binding in hot pressing machine is prepared into single sided copper clad aluminium base；
(2) the single sided copper clad aluminium base is soaked in chemical medicinal liquid, with the cathode copper that thermally conductive insulating layer is combined
Paper tinsel is etched into line layer according to certain pattern；
(3) chemical adhesive is sprayed on the first anode alumina layer surface of single-sided aluminum-base plate, then by inorganic powder grains
Glue surface is uniformly arranged on, after high-temperature baking, ultrasonic wave cleaning is dried, and stratum granulosum is formed, so as to obtain aluminum-based circuit board；
(4) corresponding electronic component and lead frame are welded with line layer；
(5) aluminum-based circuit board with lead frame and electronic component is positioned in encapsulating mould, by epoxy bag
In envelope material injection mould, SPM is obtained.
Second plate alumina layer can cause to be insulated between aluminum layer and line layer, especially be welded to the electricity on line layer
Insulation between subcomponent and aluminum layer.In order that obtaining insulated between aluminum layer and line layer particularly electronic component and aluminum layer
Between insulation effect more preferably, in a preferred embodiment, the thickness of the second plate alumina layer is 1~20 micron, more preferably
It is 10 microns.The second plate alumina layer of the preferred thickness enables to electronic component to be up to aluminum layer insulation proof voltage
300 volts.
Aluminum layer, thermally conductive insulating layer, line layer may each be the conventional structure in this area, in the utility model embodiment
Do not require particularly.The electronic component being welded on line layer can be according to the application of reality or according to SPM
Type is selected.
From the foregoing, above-mentioned is by chemical adhesive for preparing the stratum granulosum of the aluminum-based circuit board of SPM
Bond inorganic powder grains and get, stratum granulosum outer surface has intrinsic coarse structure, so as to significantly improve the aluminium base line
Adhesion between road plate and the package casing of SPM, with reference to both rear not stratified, does not ftracture so that intelligent power
The reliability of module is higher.
The technical solution of the utility model is described in detail above in association with accompanying drawing, it is contemplated that how is proposition in correlation technique
The technical problem of total incapsulation dress reliability and power model heat dispersion is improved, the utility model proposes a kind of substrate, substrate
Preparation method and SPM, adhere to form inorganic particles by the dorsal part of substrate body, improve substrate
Roughness, namely improve the adhesion between substrate body and encapsulating material, further, since inorganic particles be generally configured with it is high
Heat endurance, therefore, the high temperature radiating of the high-temperature technology and power device of semiconductor fabrication processes will not cause inorganic particle
The shape or membrane stress of layer occur significantly to change, and further, the thermal stress of inorganic particles is small, and heat transfer efficiency
Height, therefore, contribute to the heat transfer between substrate and encapsulating material, to improve the radiating efficiency of power device.Wherein, inorganic particle
The preparation process of layer is compatible with standard CMOS process or other sophisticated semiconductor work flows, therefore, it is suitable to produce in batches and pushes away
Wide application.
Preferred embodiment of the present utility model is the foregoing is only, the utility model is not limited to, for this
For the technical staff in field, the utility model can have various modifications and variations.It is all it is of the present utility model spirit and principle
Within, any modification, equivalent substitution and improvements made etc. should be included within protection domain of the present utility model.
Claims (10)
1. a kind of substrate, it is characterised in that including：
Substrate body；
Alloy circuit wiring layer, located at the positive side of the substrate body；
Inorganic particles, adhere to the dorsal part of the substrate body.
2. substrate according to claim 1, it is characterised in that
The substrate body includes aluminum substrate.
3. substrate according to claim 2, it is characterised in that the substrate body includes：
Alumina layer, the insulating barrier being combined successively, oxide layer are formed at the surface of the aluminum substrate.
4. substrate according to claim 3, it is characterised in that
The thickness range of the alumina layer is 1~20 micron.
5. substrate according to claim 3, it is characterised in that
The thickness of the alumina layer is 10 microns.
6. substrate according to any one of claim 1 to 5, it is characterised in that
The inorganic particles include at least in alumina particle, silicon-carbide particle, silicon oxide particle and silicon nitride particle
Plant inorganic particle.
7. substrate according to any one of claim 1 to 5, it is characterised in that
The roughness range of the inorganic particles is 1~500 micron.
8. a kind of SPM, it is characterised in that including：
Substrate, the substrate as any one of claim 1~7；
Power device, is welded in the first designated area of the positive side of the substrate.
9. SPM according to claim 8, it is characterised in that also include：
Metal connecting line, is connected to the second designated area of the positive side of the power device and substrate specified.
10. SPM according to claim 9, it is characterised in that also include：
Package casing, is coated on the substrate, the metal connecting line and the power device entirely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621282181.2U CN206236669U (en) | 2016-11-24 | 2016-11-24 | Substrate and SPM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621282181.2U CN206236669U (en) | 2016-11-24 | 2016-11-24 | Substrate and SPM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206236669U true CN206236669U (en) | 2017-06-09 |
Family
ID=58980164
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621282181.2U Expired - Fee Related CN206236669U (en) | 2016-11-24 | 2016-11-24 | Substrate and SPM |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206236669U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384731A (en) * | 2016-11-24 | 2017-02-08 | 广东美的制冷设备有限公司 | Substrate, method for manufacturing substrate and smart power module |
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2016
- 2016-11-24 CN CN201621282181.2U patent/CN206236669U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384731A (en) * | 2016-11-24 | 2017-02-08 | 广东美的制冷设备有限公司 | Substrate, method for manufacturing substrate and smart power module |
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