TWI231586B - Chip module having high heat dissipation property and its substrate - Google Patents

Abstract

A kind of chip module having high heat dissipation property and its substrate are disclosed in the present invention. The invented chip module contains a substrate having high heat dissipation property; and plural chips are disposed on the substrate. For the substrate, an insulation layer is formed on the metal plate surface and is followed by disposing a copper circuit layer on the insulation layer, in which the copper circuit layer can be used to bond the chip. The material of the substrate is selected from an aluminum composite having high heat transfer coefficient to achieve the lightness and avoid thermal deformation. The insulation layer also is formed by the material with excellent heat transfer property and, particularly, is the metal oxide of which the heat transfer coefficient is higher than that of resin or fiber. Thus, the chip is capable of uniformly diffusing heat to the entire circuit board such that heat can be quickly dissipated in the air of the ambient.

Description

1231586 V. Description of the invention (1) [Technical field to which the invention belongs] Don't em :, about a high heat dissipation chip module and its substrate, special mi :: use, matrix composite materials to form metal composite [previous technology] 隹:: ^ t products gradually go to high-performance, high-frequency, high-speed and light ::: Fang :: exhibition '1 "light, thin, short, small, multifunctional" design said ::: rt Related major Parts such as the central processing unit _,: mi s, etc. have been researched and developed in the direction of high speed, multifunction, high power, and small size. Therefore, the key to the continued development of rain suppression and vegetable development. v A j / Integrated circuit (I c) The performance of the chip u At & ^, because the transistor can be accommodated per square inch: sentence holding, ,, and shell improvement, is the growth of the number of crystals, consumption The power is also related to Zengli :: To. With Ding I followers get bigger. In the past, cars were handled by 32 bits, 66 million hertz (MHz), and 3 watts of power. , It has evolved to 64bit, 300 MHz, and power consumption is also important. Power consumption directly generates heat. If it is too large, the life of the chip will be shortened. Hot for Ping Er! Can not be ruled out, it will shorten the service life with two: half ..., in order to maintain the use of the chip; :: All kinds of heat dissipation methods must be used to remove excess heat. 7 In order to remove the heat of the 1C chip, the heat needs to pass through the heat transfer path: the heat of the chip can be transferred to the outside air. Among them, the area and heat dissipation capacity of the metal wiring of the circuit board ... mainly still needs to account for the overall proportion: large

I231586 V. Description of the invention (2). • Composite substrates, such as ordinary glass fiber cloth or soft substrates for heat dissipation. However, the element: Si raw conductor on the printed circuit board is conductive to dissipate heat, and the element: heat conductive medium cannot be dissipated. At the same time, the efficiency of the component is quickly dissipated by air, and the accumulated heat is quickly and effectively dissipated, and the multilayer circuit board is more stringent ‘:’ or even reduces the life of the component. This is described in [Inventive Content]

The first of the present invention—Η Λ / έ / XX can effectively generate wafers = high-heat-dissipation wafer modules. Table, a large area of heat: heat = = surface, and then reduce the wafer mold by the material-species The fan heat sink, heat pipe or the third day of the present invention is used to provide a reliable heat dissipation for the chip module. The heat dissipation of the chip module or the entire chip module or the whole

A traditional crash occurred. The fourth purpose of the ancient invention of U is to provide a substrate with high heat dissipation, and aluminum-based composite materials that can benefit from thermal management to form a metal composite plate, and directly form an insulating layer and a circuit layer on its surface. It has the characteristics of high thermal conductivity and high thermal conductivity. It can directly transfer thermal energy, and at the same time avoid the thermal deformation generated in the south temperature environment. A fourth object of the present invention is to provide a method for manufacturing a substrate, which is a composite board that directly forms an insulating layer and a circuit layer on its surface, and has simpler manufacturing steps than a circuit board. To achieve the above objectives, this

Page 8! 231586 V. Description of the invention (3) The invention discloses a board 'and a system and a metal layer, and the purpose of electrical connection is provided above the insulating molecular material. The best material is effectively transferred to the air. A kind of high heat-dissipating chip is set on the wafer, and the wafer is a metallized film layer on the gold layer. Via the circuit layer, electricity can be provided on the entire substrate due to metal oxygen. The main surface of the high heat dissipation plate is shaped as an insulating object. On the surface of the adhesive and heat-generating surface, the circuit layer compound and the substrate are used to make the thermal module. The amount of electricity formed on the substrate by the composite compound and electricity as an electric metal is included by one. The base plate is formed of a plated substrate surface and a broader element of the plate. The base is composed of an insulating or high insulating layer, electrically connected, and conductive heat energy accumulated and dissipated. The metal composite plate formed by the aluminum metal composite material. With metal system: f I Special: Department I, and its reinforcing filler has the characteristics of high hardness, low expansion and light weight. Applying it to the construction can not only achieve a good body weight s, it has always made breakthroughs. Sexual improvement. [Embodiment] FIG. = 1 The picture shows the structure of the single-layer substrate of the wafer module of the present invention. Eight: The metal composite plate 23 is covered with an insulating layer 22, and the insulation can be a metal compound of the composite plate, namely an oxide film layer or a nitride film. Layer, plate 2 An insulating ceramic material or polymer material is deposited on the surface of a metal compound as a thunder. The insulating film 22 can be used to replace the conventional composite substrate, that is, an electrical insulator between the first layer 21 and the metal composite plate 23 is obtained. For example, the base compound material is used as the material of the metal composite plate 23, and an aluminum oxide or aluminum nitride insulating film layer is formed on the surface of the aluminum material. By table

1231586

V. Explanation of the invention (4) One can know that the thermal conductivity of aluminum is 237W / M · κ, the alumina is 4M / M.K and the nitride inscription is 140 to 23〇w / M · κ. :: Talent has different heat transfer with its fillings: It is similar to aluminum, or even larger than aluminum. Compared with the core _4, the above materials are approximately 0.2 W / M. In terms of K, they have superior thermal conductivity, and at the same time, they are also 2 ^^ thermal insulators. The n-plane, whether it is oxygen or m-lu, also presents a good electrical insulator, which can prevent the teeth of the circuit sound from penetrating to the metal composite plate 23 and causing a short circuit.

Table 1 Material thermal conductivity (W / M · K) Resistance value (Ω · Al 237 2.8x10-6 Alumina 46 > 1〇ΐ4 Nitride 140 ~ 23 > 1〇ΐ4 FR-4 0.2 > 1 〇! 4, in order to prevent the metal composite sheet 33 from being exposed, which may cause short circuits due to contact with other circuits in the system, it is necessary to form an insulating layer 34 on the bottom surface of the metal composite sheet 33, as shown in FIG. 2, which is the present invention Schematic diagram of the structure of the wafer module / single-layer substrate. Similarly, the substrate 3 has an insulating sound 3 2 and the circuit layer 31 are sequentially stacked on the upper surface of the metal composite plate 33. "In addition to considering surface adhesion The substrate suitable for the type component, the present invention also provides a substrate for the socket type component, as shown in Figure 3, is a schematic diagram of the structure of the through-hole double-layer substrate of the wafer module of the present invention. Walls are vertical and straight

Page 10 1231586 V. Description of the invention (5) --- The wire 413 electrically connects the upper and lower circuit layers 411 and 412. Protective insulating layers 42 are formed in the holes and the upper and lower surfaces of the handle 4 plywood ^ 53. Fig. 4 is a schematic diagram showing the structure of another two-layer substrate of the wafer module of the present invention. It is another type of surface-adhesive element (SMD) -compatible substrate 50. It is also drilled in the metal composite plate 53, and a protective insulating layer 52 is formed around the through hole and on the surface of the upper plate. There is a vertical wire 513 in the middle of the through hole to electrically connect the upper and lower circuit layers 511 and 512. In this form, the substrate 50 may be provided with a circuit pattern or a soldering surface adhesive element on both the upper and lower sides. , # Among them, the heat transfer path is the thermal energy generated by the chip is transmitted from the circuit layer to the substrate, a small part of the thermal energy is scattered from the upper surface of the wafer, and the other part is transmitted from the upper insulating layer to the lower. The insulating layer escapes into the air and the middle metal composite plate quickly transmits the heat energy of the upper insulating layer to the lower insulating layer. The heat energy can be quickly transferred to the upper and lower surfaces of the entire substrate ', and the heat radiation area is expanded to the extreme. The above-mentioned manufacturing method of the substrate can be completed by improving the existing manufacturing method of the printed circuit board and combining the advantages of the semiconductor manufacturing process. Fig. 5 is a manufacturing flowchart of the first embodiment of the present invention. First select a metal composite sheet with good thermal conductivity (step 6 1); form a homogeneous slab edge layer on the surface of the metal composite sheet (step 6 2); there are many ways to form an insulating layer, including thermal oxidation ^, gas phase Deposition or anodizing, etc. Because the surface of the insulating layer is not easy to adhere to other substances, it is necessary to complete the activation of the surface of the insulating layer (step 6 3) ’to perform copper precipitation on the surface of the insulating layer to form a seed layer (step 6 4);

1231586 V. Description of the invention (6) Electroplating copper by seed layer (step 6 becomes MW and combined cover-copper ore layer, and then enter: 5 on the insulation layer = pattern (step 66), then Outside the circuit; ^ The coating is formed in the shape of J: the surface of the edge layer is subjected to copper debonding to form a seed: two rots and drops. Its: off = the method of copper precipitation can use the step of chemical ^ step 64), which enters the lamp m pj Pre-copper plating method, physical copper plating method or applicable hot dust method, the copper box is finished with an adhesive, and the process conditions and the insulation layer are completed; and by: f; lamp electric copper (step 65) In this step, in addition to using chemical copper precipitation: to form a copper plating layer, a physical copper deposition method can also be used to form a uniform copper plating layer. ～ 土 ～ Η 料, = is the thermal base of Ming-based composite material soil-it is said to be a good combination of other alloys, showing a light weight, abrasion resistance, high specific rigidity and ^ '' Such as the intensity of i. Coupled with its unique network thermal conductivity and low thermal expansion coefficient, etc. 2 The thermal conductivity can not only remove the electron jealousy, but also the heat generated by r: f. Deformation due to thermal stress. Aluminium-based composites have a thick spoon of 8 liters, and are produced in the following materials: cast iron 妷, 妷 fiber-reinforced aluminum-based composite materials, and composite materials. Diamond particle reinforced aluminum-based composites. First and second choices: other methods to form circuit layers. Figure 6 shows the present invention.

ί. flow chart. First select-metal I port with good thermal conductivity, and drill holes in the Meng composite sheet (step 7 1) · for eight genus,-forming a uniform insulation layer on the surface of the sheet (there are a lot of methods of point a, including the right extraction &, Guang ^ 丨 ㈠, the method of forming the insulation layer is tick method, rolling phase deposition or anode Page 12 1231586 V. Description of the invention (7) The surface of the insulation layer is not easy to attach other substances, so the insulation must be completed first The surface of the layer is activated (step 73); an anti-plating resist is placed on the surface of the insulating layer (step 74), and the anti-electroplating material is coated on the part of the circuit that does not require the circuit; (Step 75), the chemical copper precipitation reaction will only occur where there is no anti-plating resist on the surface of the insulating layer; copper is electroplated on the circuit pattern type surface to form a uniform circuit layer (step 76). The surface of the sacrificial layer is subjected to copper ore ore formation to form a circuit pattern (steps 7 to 5). The method of copper leaching can be chemical copper leaching, physical copper crystallization or hot pressing. ; And circuit diagram type copper plated, 1 Sentences are circuit layer step (step 76) of, the method for dividing into the Ding, the analysis may use an electroless copper plating method, or a physical copper plating plus analysis:

Reached. The marginal layer can be formed by thermal oxidation, vapor deposition, or chemistry. Among the gas phase anodizing methods, the human-layer tackifier layer has poor adhesion to the insulating layer, so it can be added. Please refer to Figure 7 for the adhesion between the power-up and the insulating layer. First select-the third embodiment of the invention of the "heat conduction" soil manufacturing flow chart. The surface of the composite board is 1: 1 :; the metal composite board (step 81); there are many methods of metal clad, the insulating layer is covered (step 82); the insulating layer is formed The reason for the insulation layer is thermal oxidation, vapor deposition, or anodizing, etc. It is easy to adhere to other substances. Therefore, before the insulating layer (step 84), copper is deposited on the surface of the adhesion layer to Form steel plating to evenly cover the surface of the insulation layer;

Page 13 1231586 V. Description of the invention (8)-Engraving the copper bell u-circuit pattern (step 85), etch away the parts other than the circuit. Among them, in the step of copper plating on the surface of the thickened layer to form a steel plating step 8), the copper plating can be performed by physical method or physical copper precipitation method. The chemical copper ore precipitation method can be used to thicken the layer (Ch), Ti (N), TiWN, Ni (Ni), Zn (Zn), ZnN , Final (Cr), chromium nitride (CrN), button (Ta) and nitride button (TaN) Hope _ L ° Has high temperature thermal stability and good electrical conductivity. Or, elements such as suitable materials (Al, tin, nickel, etc.) or their compounds contain inscriptions. Although a preferred embodiment of the present invention discloses a gluing layer. In order to limit the present invention, any person familiar with the relevant technology: households: "But it is not within the spirit and scope, when it can be done a little" There is no need to depart from the scope of patent protection of the present invention. Therefore, the present invention prevails. As defined by the scope of patent application

1231586 Brief description of the drawings. Figure 1 is a schematic diagram of the structure of a single-layer substrate of the wafer module of the present invention, Figure 2 is a schematic diagram of the structure of another single-layer substrate of the wafer module of the present invention, and Figure 3 is a schematic diagram of the single-layer substrate of the wafer module of the present invention. The structure of the through-hole double-layer substrate of the wafer module is not intended, and FIG. 4 is a schematic diagram of the structure of another double-layer substrate of the wafer module of the present invention; FIG. 5 is a manufacturing flowchart of the first embodiment of the present invention; FIG. 6 is a manufacturing flowchart of the second embodiment of the present invention; and FIG. 7 is a manufacturing flowchart of the third embodiment of the present invention. [Illustration of Symbols] 10 wafers 20 substrates 21 circuit layers 22 insulation layers 23 metal composite plates 30 substrates 31 circuit layers 32 insulation layers 33 metal composite plates 34 insulation layers 40 substrates 411 circuit layers

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II I i

Schematic description 412 Circuit layer 413 Vertical wire 42 Insulation layer 43 Metal composite plate 45 Through L 50 Substrate 511 Circuit layer 512 Circuit layer 513 Vertical wire 52 Insulation layer 53 Metal composite plate Step 61 Select a metal composite plate with good thermal conductivity 6 2 Form a uniform insulating layer on the surface of the metal composite sheet. Step 63 Complete the activation of the surface of the insulating layer. 6 4 Perform copper deposition on the surface of the insulating layer to form a seed layer. 6 5 Perform copper plating through the seed layer. 6 6 Etch the copper plating layer. To form a circuit pattern Step 7 1 Select a metal composite plate with good thermal conductivity and drill holes in the metal composite plate Step 72 Form a uniform insulating layer on the surface of the metal composite plate Step 7 3 Complete the surface activation of the insulating layer Step 7 4 Add anti-plating resist on the surface of the insulating layer. Step 7 5 Perform copper plating on the surface of the insulating layer to form a circuit pattern. Step 7 6 Plating copper on the surface of the circuit pattern to form a uniform circuit. Page 16 1231586 Step 8 1 Select a metal composite sheet with good thermal conductivity Step 82: Form a uniform insulating layer on the surface of the metal composite sheet. Step 83: Form a thickening layer on the insulating layer. Step 8: Deposition copper on the surface of the thickening layer to form a copper layer. Step 85: Etch the copper plating layer further to form a circuit. Pattern

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Claims (1)

1231586 Six, the scope of the patent application 1. A highly heat-dissipative chip module, which contains high heat-dissipation chips 1 ", ~ is reflected in more than one wafer on the substrate, which is characterized in that the substrate contains a metal composite sheet, It is formed by an aluminum-based composite material. An insulation layer is formed by covering two layers of insulation and a circuit layer on the surface of the metal composite sheet. The insulation layer is provided on the surface of the insulation layer. High-heat-dissipation chip module, in which there is a tackifier layer between the insulation layer and the circuit layer, so that the circuit layer is covered on the insulation layer by the tackifier layer. The thermal wafer module described in 2 items, wherein the percentage increasing layer is titanium (Ti), titanium nitride (TiN), tungsten nitride (WN), titanium tungsten nitride (TiWN), nickel (Ni ), Zinc (Zn), zinc nitride (ZηN), chromium (Cr), chromium nitride (CrN), tantalum (Ta), and one of the gasification groups (TaN). 4 · As for the scope of patent application The high heat dissipation chip module according to item 2, wherein the adhesion-promoting layer contains aluminum (A 1), tin (S n), and nickel (N 1) and one of its compounds. 5. The wafer module with high heat dissipation as described in the scope of patent applications 1, 2, 3, or 4, wherein the circuit layer is formed by electroplating, chemical It is formed by one of the copper plating method, the physical copper plating method and the hot pressing method. 6. The high heat dissipation chip module as described in the scope of patent application No. 1, 2, 3 or 4. The Ming-based composite material is reinforced with carbonaceous stone and granite #Lu Ji composite material, carbon fiber reinforced aluminum-based composite material and diamond particle reinforcement 1231586 6. Scope of patent application One of aluminum-based composite materials. 7. The high-heat-dissipating wafer module as described in the scope of application for patents I, 2, 3 or 4, wherein the insulating layer is a compound of the metal composite sheet. 8. The high-heat-dissipating chip module as described in the claims 1, 2, 3 or 4, wherein the insulating layer is an oxide. 9. The wafer module with high heat dissipation as described in claims 1, 2, 3, or 4, wherein the insulating layer is a nitride. 10. The wafer module with high heat dissipation as described in claims 1, 2, 3 or 4 in the scope of the patent application, wherein the insulating layer is a ceramic material. 1 1. The wafer module with high heat dissipation as described in claims 1, 2, 3 or 4 in the scope of patent application, wherein the insulating layer is a polymer material. 1 2. The wafer module with high heat dissipation as described in claims 1, 2, 3, or 4, wherein the insulating layer is formed by a thermal oxidation method, a vapor deposition method, a chemical coating method, It is formed by one of a spray method, a coating method, a dipping method, and an anodizing method. 1 3. The wafer module with high heat dissipation as described in item 12 of the scope of patent application, wherein the vapor deposition method is a physical vapor deposition method. 1 4. The wafer module with high heat dissipation as described in item 12 of the scope of patent application, wherein the vapor deposition method is a chemical vapor deposition method. 1 5. The chip module with high heat dissipation as described in claims 1, 2, 3 or 4 in the scope of patent application, wherein the wafer is an electronic component. 16. The chip module with high heat dissipation as described in item 15 of the scope of patent application, wherein the electronic component is a surface-adhesive component. 1 7. High heat dissipation as described in the scope of patent applications 1, 2, 3 or 4 Page 19, 1231586 6. The patent application scope of the wafer module, wherein the metal composite plate of the substrate further includes a plurality of through holes, the inner wall of the through hole is covered by the insulating layer, and ^ ^ vertical wires are provided in the through Surface of the insulating layer of the hole. 18. The high heat dissipation chip module as described in item 7 of the patent application scope, wherein the chip has a plurality of pins, a plurality of through holes can be inserted by the pins of the chip, and the plurality of vertical holes The wires are electrically connected to the circuit layer. '1 9 · A highly heat-dissipating substrate, comprising: a metal composite plate formed of a Ming-based composite material; an insulating layer coated with an insulating substance on the surface of the metal composite plate; and a circuit layer, It is provided on the surface of the insulating layer. 2 0. The substrate with high heat dissipation properties as described in item 9 of the scope of the patent application, wherein the insulating layer and the circuit layer have a tackifier layer, so that the circuit layer is coated on the insulation through the tackifier layer. On the floor. (Cr), formed 2 1 · The substrate with high heat dissipation as described in item 20 of the patent application scope, wherein the thickening layer is titanium (Ti), titanium nitride (TiN), tungsten nitride (WN ), Titanium tungsten nitride (TiWN), nickel (Ni), zinc (Zn), zinc nitride (ZnN), chromium, chromium nitride (CrN), sister (a) and nitride group (TaN) ^ 2 2 · The substrate with high heat dissipation properties as described in item 20 of the scope of patent application, wherein the thickening layer contains one of aluminum (A 1), tin (Sn), nickel (N 丨), and a compound thereof . 2 3. High heat dissipation as described in the scope of patent application No. 19, 20, 21 or 22 Page 20 1231586 6. The scope of the patent application substrate, in which the circuit layer is formed by one of the electroplating method, chemical copper deposition method, physical copper deposition method and hot pressing method. 24. The substrate with high heat dissipation as described in claim 19, 20, 21 or 22, wherein the insulating layer of the substrate is a ceramic material. 25. The two heat-dissipative substrates described in item 19, 20, 21 or 22. Particle reinforced aluminum-based composites. 26. The substrate having high heat dissipation properties according to item 19, 20, 21 or 22 of the scope of the patent application, wherein the insulating layer is a compound of the metal composite plate. 2 7 · The substrate with high heat dissipation as described in the scope of patent application No. 19, 20, 21 or 22, wherein the insulating layer is an oxide. 28. The substrate with high heat dissipation properties as described in the scope of claims 19, 20, 21, or 22, wherein the insulating layer is a nitride. 2 9 · The substrate with high heat dissipation as described in the scope of application for patent No. 19, 20, 21 or 22, wherein the insulating layer is a polymer material. 3 0 · The substrate with high heat dissipation as described in the scope of patent application No. 丨 9, 20, 21, or 22, wherein the insulating layer is formed by a thermal oxidation method, a vapor deposition method, or a chemical coating method. , Spray method, coating method, dipping method and anodizing method. 3 1 · The substrate with high heat dissipation as described in item 30 of the scope of patent application, wherein the vapor deposition method is a physical vapor deposition method. 3 2. The heat-dissipating substrate as described in item 30 of the patent application 1231586 6. Scope of patent application The vapor deposition method is chemical vapor deposition. 33. The substrate with high heat dissipation as described in the scope of application for patent No. 19, 20, 21 or 22, wherein the metal composite plate further includes a plurality of through holes, and the inner wall of the through holes is covered by the insulating layer, and A plurality of vertical wires are provided on the surface of the insulating layer of the through hole. Page 22