CN108200716A - Ceramic PCB manufacturing process based on graphene material - Google Patents
Ceramic PCB manufacturing process based on graphene material Download PDFInfo
- Publication number
- CN108200716A CN108200716A CN201810040771.1A CN201810040771A CN108200716A CN 108200716 A CN108200716 A CN 108200716A CN 201810040771 A CN201810040771 A CN 201810040771A CN 108200716 A CN108200716 A CN 108200716A
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- copper strips
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- circuit
- manufacturing process
- graphene material
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 50
- 239000000919 ceramic Substances 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910052802 copper Inorganic materials 0.000 claims abstract description 71
- 239000010949 copper Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 238000011161 development Methods 0.000 claims abstract description 4
- 238000010586 diagram Methods 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 210000001161 mammalian embryo Anatomy 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 15
- 239000011889 copper foil Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 125000003368 amide group Chemical group 0.000 claims description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 239000011224 oxide ceramic Substances 0.000 claims description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
the invention provides a graphene material-based ceramic PCB manufacturing process which comprises the steps of coating one surface of a copper strip substrate with a photosensitive wet film, carrying out exposure development on the copper strip substrate coated with the photosensitive wet film by adopting a pattern film according to a preset circuit pattern, placing the copper strip substrate with the wet film pattern into electroplating solution for electroplating, removing the photosensitive wet film in the copper strip substrate with a metal circuit layer with a preset thickness, forming a graphene film on the other surface of the copper strip substrate with a preset circuit pattern, attaching a pre-obtained blank to the surface of the preset circuit pattern of the copper strip substrate, and sintering the copper strip substrate with the pre-obtained circuit pattern and attached with the blank into a whole at a temperature lower than the melting point of the metal circuit without etching, so that a metal circuit with a large thickness range and high precision can be obtained, and meanwhile, the graphene film has strong heat performance and can rapidly dissipate heat generated by a welded L ED light source.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of ceramic PCB manufacturing process based on graphene material.
Background technology
Ceramic PCB refers to the wiring board for having ceramic substrate to form, and ceramic substrate refers to that copper foil is bonded directly at high temperature
Special process plate on aluminium oxide (Al2O3) or aluminium nitride (AlN) ceramic substrate surface (single or double), made is super
Thin composite substrate has good electrical insulation performance, high heat conduction characteristic, excellent solderability and high adhesive strength, and can picture
Pcb board is the same to etch various figures, have very big current capacity.Therefore, ceramic substrate has become high-power electric electricity
The basic material of sub-circuit structure technology and interconnection technique.
In the prior art, generally using following several method manufacture ceramics PCB：
1）HTFC（Hight-Temperature Fusion Ceramic), also known as high-temperature fusion ceramic substrate, this technology will
With steel plate bat printing technology, height is passed for the single or double of high-temperature insulating quality and highly thermally conductive AL2O3 or AIN ceramic substrates
It leads dielectric material and is printed to circuit, be positioned over sinter molding in 850 ~ 950 DEG C of sintering furnace, you can complete.
2）LTCC（Low-Temperature Co-fired Ceramic) low temperature co-fired multilayer ceramic substrate is also known as,
This technology must be uniformly mixed its and claim first by inorganic alumina powder and more 30 ~ 50% glass material plus organic binder bond
For the slurry filled for mud, slurry slabbing is scraped, then sheet slurry is formed one via one of drying process followed by scraper
Then the very thin raw embryo of piece piece bores via hole according to the design of each layer, as the transmission of each layer signal, LTCC internal wirings then use
Screen printing technology, respectively at doing filling perforation and printed wiring in raw embryo, internal and external electrode can then use the metals such as silver, copper, gold respectively,
Each layer is finally done into lamination action, is positioned over sinter molding in 850 ~ 900 DEG C of sintering furnace, you can is completed.
3） HTCC（Hight-Temperature Co-fired Ceramic), also known as high temperature co-firing multi-layer ceramics is raw
It produces manufacturing process and LTCC is very much like, main discrepancy is that the ceramic powders of HTCC have no glass material, therefore, HTCC
It must be dried under 1200 ~ 1600 DEG C of environment of high temperature and harden into raw embryo, it is then similary to bore upper via hole, it is filled out with screen printing technology
Hole is in printed wiring, because its co-fired temperature is higher so that the selection of metallic conductor is limited, main material for fusing point compared with
The metals such as high but poor electric conductivity tungsten, molybdenum or manganese, finally lamination sinter molding again.
4） DBC（Direct Bonded Copper), copper base is also known as directly engaged, first by the AL2O3 of high-insulativity
Or after the single or double of AIN ceramic substrates is covered with copper metal, is heated via 1065 ~ 1085 °C of environment of high temperature, make copper metal
Because of high-temperature oxydation, expanding is generated with AL2O3 materials（Eutectic）Eutectic melt, is the bonding of copper metal ceramic substrate, and shape is ceramic
Composite metal substrate, it is last to be designed according to circuit, with etching mode circuit to the utmost.
5）DPC（Direct Plate Copper), it is clear first to be done pre-treatment by also referred to as direct copper plating substrate for ceramic substrate
It is clean, using film specialized fabrication technology-vacuum coating mode in sputter on ceramic substrate in copper metal composite bed, then with Huang
Photoresist coating exposure, development and the etching of light lithography, striping processing procedure is completed circuit and is made, finally again with plating/electroless deposition
Mode increases the thickness of circuit, and metal line is completed after photoresist removal and is made.
Graphene is the graphite flake of monoatomic layer, has excellent electrical properties, and electron mobility is up to 100,
000cm2V-1s-1 was most prepared earlier than 2004 by the scientist of Univ Manchester UK.Electricity in single-layer graphene
Son has linear dispersion relation near dirac point, belongs to the dirac fermion of massless, and Fermi velocity is the light velocity
1/300.The resistivity of graphene is extremely low, and the speed of electron transfer is exceedingly fast, therefore is expected to can be used to develop thinner, conductive
Speed of new generation electronic component or transistor faster.
But the above method prepares metallic circuit and is required for etching, and the thickness range of metallic circuit prepared by the above method
The heterogeneity phantom of limited and entire substrate is uneven, in addition, the above method is also there are more complicated, cost is higher, reliability compared with
The shortcomings that low.
Invention content
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, provide a kind of perfect heat-dissipating, it is simple for process, into
This is relatively low, reliability is higher and does not need to the ceramic PCB manufacturing process based on graphene material of etching.
The invention is realized in this way a kind of ceramic PCB manufacturing process based on graphene material, includes the following steps：
In one layer of photosensitive wet film of coated on one side of copper strips substrate；
According to scheduled circuitous pattern, development is exposed to the copper strips substrate for being coated with photosensitive wet film using the figure film, is made
Into the copper strips substrate with wet film figure；
Copper strips substrate with wet film figure is put into electroplate liquid and is electroplated, and according to predetermined current and electroplating time, is made
The copper strips substrate of metallic circuit layer with preset thickness；
Photosensitive wet film in the copper strips substrate of metallic circuit layer of the removal with preset thickness, and dry, it is made with preset
The copper strips substrate of circuit diagram；
A layer graphene film is formed on the another side of the copper strips substrate with preset circuit diagram with vapour deposition process；
The raw embryo obtained in advance is fitted on the surface of the preset circuit diagram of the copper strips substrate with preset circuit diagram；
The copper strips substrate with preset circuit diagram that will be fitted with raw embryo using the preset temperature less than metallic circuit fusing point
It fires integrally, the ceramic PCB based on graphene material is made；
Processing and forming and metallic circuit processing are carried out to the manufactured ceramic PCB based on graphene material.
Further, it is described to include before the step of one layer of photosensitive wet film of coated on one side of copper strips substrate：
The copper strips substrate cut is subjected to electrochemical polish, acid cleaning and high pressure annealing processing.
Further, it is described to form one on the another side of the copper strips substrate with preset circuit diagram with vapour deposition process
The step of layer graphene film, specifically includes：
Using methane or ethyl alcohol drop as carbon source, Ar makes carbon source with gaseous form contact with preset circuit as protection gas
The copper strips substrate surface of figure；
In hot wall chamber chemical gas-phase deposition system at certain temperature and air pressure conditions, make carbon source with preset circuit diagram
Copper strips substrate surface on decompose, deposit out graphene.
Further, the electroplate liquid includes copper sulphate or amido yellow acid nickel.
Further, the preset thickness is 10-50um.
Further, using the copper strips substrate for moving back the metallic circuit layer with preset thickness made of film liquid or the removal of piece alkali
In photosensitive wet film.
Further, the raw embryo material is aluminum oxide ceramic raw embryo.
Further, metallic circuit is copper foil circuit or nickel foil circuit.
Further, when metallic circuit is copper foil circuit, the preset temperature less than copper foil circuit fusing point is 850-950
℃；When metallic circuit is nickel foil circuit, the preset temperature less than nickel foil circuit fusing point is 1300-1400 DEG C.
Further, the metallic circuit processing includes metallic circuit surface antirust or welding resistance processing.
Beneficial effects of the present invention：The present invention provides a kind of ceramic PCB manufacturing process based on graphene material, pass through by
Copper sulphate or amido yellow acid nickel plating solution electrochemical precipitation process are in the copper strips substrate with wet film exposing patterns, then remove the wet film, make
The deposited metal circuit is filled in alundum (Al2O3) raw embryo, then sinter molding simultaneously, due to not needing to etch, while can be obtained
Thickness range is big and metallic circuit with high accuracy, meanwhile, the graphene film of copper strips substrate another side its with stronger heat
Can, can rapidly by the LED light source of welding generate heat disperse, in this way, all heats directly by LED light source in itself
Heat sink direct heat conduction takes and radiate in time to copper-based equipped with graphene film, so as to preferable heat dissipation effect.Separately
Outside, the ceramic PCB manufacturing process provided by the invention based on graphene material have simple for process, cost relatively low and reliability compared with
The advantages of high.
Description of the drawings
Fig. 1 is the flow chart of the ceramic PCB manufacturing process based on graphene material of the embodiment of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The realization of the present invention is described in detail below in conjunction with specific embodiment.
As shown in Figure 1, in the embodiment of the present invention, a kind of ceramic PCB manufacturing process based on graphene material is provided, is wrapped
Include following steps：
S100, in one layer of photosensitive wet film of coated on one side of copper strips substrate；
It is described also to be wrapped before the step of one layer of photosensitive wet film of coated on one side of copper strips substrate in a kind of possible realization method
It includes：
The copper strips substrate cut is subjected to electrochemical polish, acid cleaning and high pressure annealing processing, makes copper strips substrate surface clean, drops
Low roughness tends to isotropism and reduces lattice defect.
S101 according to scheduled circuitous pattern, exposes the copper strips substrate for being coated with photosensitive wet film using the figure film
The copper strips substrate with wet film figure is made in photodevelopment；
Copper strips substrate with wet film figure is put into electroplate liquid and is electroplated by S102, and according to predetermined current and electroplating time,
The copper strips substrate of the metallic circuit layer with preset thickness is made；
S103, removal carries the photosensitive wet film in the copper strips substrate of the metallic circuit layer of preset thickness, and dries, and is made with pre-
If circuit diagram copper strips substrate；
In a kind of possible realization method, using move back film liquid or piece alkali removal made of carry preset thickness metallic circuit layer
Copper strips substrate in photosensitive wet film.
S104 forms a layer graphene with vapour deposition process on the another side of the copper strips substrate with preset circuit diagram
Film；
In a kind of possible realization method, it is described with vapour deposition process in the another of the copper strips substrate with preset circuit diagram
A step of layer graphene film is formed on face specifically includes：
Using methane or ethyl alcohol drop as carbon source, Ar makes carbon source with gaseous form contact with preset circuit as protection gas
The copper strips substrate surface of figure；
In hot wall chamber chemical gas-phase deposition system at certain temperature and air pressure conditions, make carbon source with preset circuit diagram
Copper strips substrate surface on decompose, deposit out graphene.
Further, the graphene film has the resistivity from 1.2 × 10-6 to 3.0 × 10-6 Ω cm,
Conductive film in this electrical resistivity range can normally realize conducting function.
For example, multiple LED light sources are fitted on the circuit layer, in this way, all heats directly pass through LED light
Direct heat conduction that source itself is heat sink takes to equipped with the copper-based of graphene film, due to the excellent heat conduction of graphene film and heat radiation
Can, heat can be radiate in time, and thermal resistance is low, conducive to heat derives, thus with preferable heat dissipation effect, meanwhile, this is based on
The ceramic PCB of graphene material is integrally frivolous.
The raw embryo obtained in advance is fitted in the preset circuit diagram of the copper strips substrate with preset circuit diagram by S105
On surface；
S106, the copper strips with preset circuit diagram that will be fitted with raw embryo using the preset temperature less than metallic circuit fusing point
Substrate is fired integrally, and the ceramic PCB based on graphene material is made；
S107 carries out processing and forming to the manufactured ceramic PCB based on graphene material and metallic circuit is handled.
Further, the electroplate liquid includes copper sulphate or amido yellow acid nickel.
Further, the preset thickness is 10-50um.
Further, the raw embryo material is aluminum oxide ceramic raw embryo.
Further, metallic circuit is copper foil circuit or nickel foil circuit.
Further, when metallic circuit is copper foil circuit, the preset temperature less than copper foil circuit fusing point is 850-950
℃；When metallic circuit is nickel foil circuit, the preset temperature less than nickel foil circuit fusing point is 1300-1400 DEG C.
Further, the metallic circuit processing includes metallic circuit surface antirust or welding resistance processing.
Beneficial effects of the present invention：The present invention provides a kind of ceramic PCB manufacturing process based on graphene material, pass through by
Copper sulphate or amido yellow acid nickel plating solution electrochemical precipitation process are in the copper strips substrate with wet film exposing patterns, then remove the wet film, make
The deposited metal circuit is filled in alundum (Al2O3) raw embryo, then sinter molding simultaneously, due to not needing to etch, while can be obtained
Thickness range is big and metallic circuit with high accuracy, meanwhile, the graphene film of copper strips substrate another side its with stronger heat
Can, can rapidly by the LED light source of welding generate heat disperse, in this way, all heats directly by LED light source in itself
Heat sink direct heat conduction takes and radiate in time to copper-based equipped with graphene film, so as to preferable heat dissipation effect.Separately
Outside, the ceramic PCB manufacturing process provided by the invention based on graphene material have simple for process, cost relatively low and reliability compared with
The advantages of high.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of ceramic PCB manufacturing process based on graphene material, which is characterized in that include the following steps：
In one layer of photosensitive wet film of coated on one side of copper strips substrate；
According to scheduled circuitous pattern, development is exposed to the copper strips substrate for being coated with photosensitive wet film using the figure film, is made
Into the copper strips substrate with wet film figure；
Copper strips substrate with wet film figure is put into electroplate liquid and is electroplated, and according to predetermined current and electroplating time, is made
The copper strips substrate of metallic circuit layer with preset thickness；
Photosensitive wet film in the copper strips substrate of metallic circuit layer of the removal with preset thickness, and dry, it is made with preset
The copper strips substrate of circuit diagram；
A layer graphene film is formed on the another side of the copper strips substrate with preset circuit diagram with vapour deposition process；
The raw embryo obtained in advance is fitted on the surface of the preset circuit diagram of the copper strips substrate with preset circuit diagram；
The copper strips substrate with preset circuit diagram that will be fitted with raw embryo using the preset temperature less than metallic circuit fusing point
It fires integrally, the ceramic PCB based on graphene material is made；
Processing and forming and metallic circuit processing are carried out to the manufactured ceramic PCB based on graphene material.
2. a kind of ceramic PCB manufacturing process based on graphene material as described in claim 1, which is characterized in that it is described
Include before the step of one layer of photosensitive wet film of coated on one side of copper strips substrate：
The copper strips substrate cut is subjected to electrochemical polish, acid cleaning and high pressure annealing processing.
A kind of 3. ceramic PCB manufacturing process based on graphene material as described in claim 1, which is characterized in that the use
Vapour deposition process is specifically wrapped form a layer graphene film on the another side of the copper strips substrate with preset circuit diagram the step of
It includes：
Using methane or ethyl alcohol drop as carbon source, Ar makes carbon source with gaseous form contact with preset circuit as protection gas
The copper strips substrate surface of figure；
In hot wall chamber chemical gas-phase deposition system at certain temperature and air pressure conditions, make carbon source with preset circuit diagram
Copper strips substrate surface on decompose, deposit out graphene.
4. a kind of ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that described
Electroplate liquid includes copper sulphate or amido yellow acid nickel.
5. a kind of ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that described
Preset thickness is 10-50um.
6. a kind of ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that use
Move back the photosensitive wet film in the copper strips substrate of the metallic circuit layer with preset thickness made of film liquid or the removal of piece alkali.
7. a kind of ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that described
Raw embryo material is aluminum oxide ceramic raw embryo.
A kind of 8. ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that metal
Circuit is copper foil circuit or nickel foil circuit.
9. a kind of ceramic PCB manufacturing process based on graphene material according to claim 8, which is characterized in that work as gold
When belonging to circuit for copper foil circuit, the preset temperature less than copper foil circuit fusing point is 850-950 DEG C；When metallic circuit is nickel foil line
Lu Shi, the preset temperature less than nickel foil circuit fusing point are 1300-1400 DEG C.
10. a kind of ceramic PCB manufacturing process based on graphene material according to claim 1, which is characterized in that described
Metallic circuit processing includes metallic circuit surface antirust or welding resistance processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810040771.1A CN108200716A (en) | 2018-01-16 | 2018-01-16 | Ceramic PCB manufacturing process based on graphene material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810040771.1A CN108200716A (en) | 2018-01-16 | 2018-01-16 | Ceramic PCB manufacturing process based on graphene material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108200716A true CN108200716A (en) | 2018-06-22 |
Family
ID=62589374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810040771.1A Pending CN108200716A (en) | 2018-01-16 | 2018-01-16 | Ceramic PCB manufacturing process based on graphene material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108200716A (en) |
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| CN113073366A (en) * | 2021-03-18 | 2021-07-06 | 东莞市志兴电子五金有限公司 | Etching silver plating matching process applied to copper sheet |
| CN113307647A (en) * | 2021-04-16 | 2021-08-27 | 长春工业大学 | Indirect brazing method of aluminum nitride ceramic copper-clad plate |
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| CN113307647A (en) * | 2021-04-16 | 2021-08-27 | 长春工业大学 | Indirect brazing method of aluminum nitride ceramic copper-clad plate |
| CN113307647B (en) * | 2021-04-16 | 2022-05-31 | 长春工业大学 | Indirect brazing method of aluminum nitride ceramic copper-clad plate |
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