M407489 五、新型說明： 【新型所屬之技術領域】 本創作係關於-種高導熱積體電路（丨c)載板，尤其係指 -種可迅速將電子元件運作時所產生的高熱加以傳導散去 之電子元件用高導熱積體電路（1C)載板。 【先前技術】M407489 V. New description: [New technical field] This is a high-heat-conducting integrated circuit (丨c) carrier board, especially for the high heat generated by the operation of electronic components. The electronic component to be used is a high thermal conductivity integrated circuit (1C) carrier. [Prior Art]
_電子元件在運作時均會伴隨高熱的產生，而效率越高 的電子元件於運作時所產生的溫度越高，貝q此高溫越會影 響電子元件的正常作用，甚至使其遭到熱破壞而無法使用。 關於電子元件散熱方式之研究已在商業中廣泛的使 用！知之晶片散熱方4，是透過載板《導線架（大型之積 體電路元件用）’將熱傳導至印刷電路板後，再傳至外界。 載板之種類主要區分為環氧基板（FR_4)、BT基板、心刚 纖維基板與陶£芯基板。而其所使用之材料分別如環氧樹 脂、A「amid纖維或陶£等，但其均為不良之熱傳導材料， 因此需靠通孔(via)的設計來增加其熱傳導性。然而目前積 體電路（1C)元件朝向多功能化、高速化、大容量化及高密度 化之方向發展’在外觀上卻朝輕、薄、短、小的趨勢發展， 故因應而生之高發熱密度將會使得現有的封裝技術面臨考 驗。 近年來用鑽石及銅或㈣具有高熱傳係數之金屬所組 成之散熱薄膜製成散熱片之研究，主要是將鑽石顆粒及金 屬以燒Μ、炫渗或加麼等方法結合成薄膜|製成散熱片。 3 J如有’中華民國專利公開號第200427030號， 麗、明内谷揭示一電子元件用散熱件係利用鑽石顆粒及金 燒結1滲或化學氣相沉積等方法製備散熱片，惟， 二化學U沉積法係於碎晶基板上披覆鋼金屬I，並於該 屬層上蝕刻出格狀框架，再以化學氣相沉積法於銅框架 的^子内几積析出鑽石膜，並將石夕晶模板溶解去除以得到 、'鑽石帛在製程上十分的麻煩，本創作不同於先前 技:需將金屬層進行㈣框架（本創作的金屬層為—連續層） 解去除矽ss模板，且本案發明亦可於金屬層表層利用 封裳材料包覆晶片形成電子半導體元件因此製程上十分 的方便。 此外，中華民國專利公開號第2〇〇427〇3〇號之發明内 备中其基板需要在金屬膜中蝕刻許多孔洞形成金屬框架，並 在該框架孔洞内錢覆鑽石膜，而本創作中，鑽石與金屬的接觸面 積遠大於該專利發明（若視鑽石膜為-扁平六面體，則本創作的接 觸面積疋整個底面’而令華民國專利公開號第2〇〇427〇3〇號 發明内容係只有邊緣的四個面接觸金屬），因此可預期本創作的 散熱效率將遠高於該案等先前技術，因此本創作較先前技術之中 華民國專利公開號第200427030號專利於製作上要簡易許 多。 另外，美國專利第2005276979號發明内容中揭示一種 含有鑽石塗層的合成基板，該基板係由陶瓷材料與碳化材 料所組成’並利用化學氣相沉積的方法沉積鑽石塗層，以 應用於拋光墊之整修頭或碟、切削工具之插入物與尖端、 M407489 惟，該合成基 本創作之高導 創新技術的發 電子裝置之散熱器或機械密封之磨損組件， 板並未含有金屬層與封裝材料，相較於此， 熱積體電路載板於組成結構與用途上均是一 明。 -般熱的良導體，也是電的良導體，反之亦缺。 =鑽石為-特例’其具有最高的熱傳導率。因此極適於 乍同功率、面電流密度電子元件用之積體電路（|c)載板。 【新型内容】 、為了解決上述問題’本創作人乃積極著手從事研究， SI:提供能夠應付將來會產生高熱之電子元件用之新 積體電路(丨c)載板’經過不斷的試驗及努力 本創作。 、*网赞出 ^了達到上述目的，本創作高導熱積體電路载板基本 =乃疋採用具高熱傳導率之材料，如銅、鋁等金屬或如碳 料：Γ太氧化鈹(Be0)、三氧化二铭㈧2。3)等非金屬材 製作本創作新型載板之基#，並於其上沉積一鑽石 膜。此外，若該基板為金屬材料所組成， =設有至少由路m錢、錯等金屬所= 之接合層。 本創作所鍍覆之鑽石層可以具有絕緣之作用，其可由 ^石或類鑽謂所組成，且結構可以為非晶質結構、單晶 結構或多晶質結構’以使得本創作之積體電路载板具有快 連熱傳導與分散之作用。另外，本創作之鑽石層亦可以具 有導電之作用’其可以為摻雜鄉）、氮（Ν)等元素的鑽石:咬 5 M407489 所形成之導電艘。該鑽石層的沉積方式，包括有 φ 沉積法（CVD)、電漿辅助氣相沉積方法（PECVD)、 電阻加熱氣相沉積方法、微波 電弧方法I此外，本創…：：積方法、及直流 可A 1夕 门導…之積體電路载板視需要 了由具多層鑽石與導電層之結構所組成。 本創作積體電路载板之鑽石層表面可設有由銅等金屬 ’’·且成之導電層’且該鑽石層與導電層間可設有至少由 鉻ϋ、鈦、錢、錯等金屬所組成之接合層，該導電 層可以㈣㈣、m電子束蒸㈣印刷方式鑛覆導 電層於接合層表面。 藉由上述之方式，本創作可以將具有最佳熱傳導效果 之鑽石與導電之金屬結合成具有極佳熱傳效果之載板，因 此可以迅速將電子元件所產生之高熱藉熱傳導而散去，以 形成一高導熱性之積體電路（1C)載板。 本創作高導熱積體電路載板可進一步於該導電層表面 設有晶片與包覆晶片之封裝材料，以形成高導熱之封裝積 體電路（丨C)載板。本創作高導熱積體電路載板可視需求形成 各式電子元件，包括但不僅限的有：表面聲波濾波器、有 機發光二極體及其陣列組合元件'無機發光二極體及其陣 列組合元件、雷射二極體與機體電路等。 【實施方式】 本創作係關於一電子元件封裝用之積體電路（丨c)載 板’可迅速將電子元件運作時所產生的高熱加以傳導散 M407489 r 去。該積體電路（IC)載板係由鑽 丁田鑽石層及銅或鋁等具有 係數之金屬所組成之複合結構。 ,间熱傳 本創作所使用的鑽石層之沉積方法，可利用在 已使用多年的化學氣相沉積法⑽emical vapo「dep〇sm〇r；_Electronic components are accompanied by high heat during operation, and the higher the efficiency of the electronic components, the higher the temperature generated during operation, the higher the temperature of the electronic components will affect the normal function of the electronic components, and even cause thermal damage. It cannot be used. Research on the heat dissipation method of electronic components has been widely used in business! It is known that the chip heat sink 4 transmits heat to the printed circuit board through the carrier plate "lead frame (for large integrated circuit components)" and then transmits it to the outside. The types of carrier plates are mainly classified into an epoxy substrate (FR_4), a BT substrate, a gangue fiber substrate, and a ceramic core substrate. The materials used are epoxy resin, A "amid fiber or ceramic", but they are all poor thermal conductive materials, so the design of vias is needed to increase the thermal conductivity. In the direction of multi-function, high-speed, large-capacity, and high-density, the circuit (1C) is developing in a light, thin, short, and small appearance, so the high heat density will be generated. The existing packaging technology is facing the test. In recent years, the research on the heat sink made of heat-dissipating film composed of diamond and copper or (4) metal with high heat transfer coefficient is mainly to burn diamond particles and metal to burn, smear or add The method is combined with a film to form a heat sink. 3 J If there is a 'Republic of China Patent Publication No. 200427030, Li and Ming Negu reveal that a heat sink for electronic components uses diamond particles and gold to sinter or chemical vapor. The heat sink is prepared by deposition, etc., but the second chemical U deposition method coats the steel metal I on the crystal substrate, and etches the lattice frame on the genus layer, and then chemical vapor deposition on the copper frame. Inside A few diamonds are deposited, and the Shi Xijing template is dissolved and removed to obtain, 'diamond is very troublesome in the process. This creation is different from the previous technique: the metal layer needs to be carried out (4) frame (the metal layer of the creation is continuous Layer) The 矽ss template is removed, and the invention can also form an electronic semiconductor component by covering the wafer with a sealing material on the surface of the metal layer. Therefore, the process is very convenient. In addition, the Republic of China Patent Publication No. 2 427 〇 3〇 In the invention of the invention, the substrate needs to etch a plurality of holes in the metal film to form a metal frame, and the diamond film is covered in the frame hole, and in the present invention, the contact area of the diamond and the metal is much larger than the patented invention. The diamond film is a flat hexahedron, and the contact area of the present invention is the entire bottom surface, and the invention content of the Korean Patent Publication No. 2 427 〇 3 发明 is only the four sides of the edge contact metal), so It is expected that the heat dissipation efficiency of this creation will be much higher than the prior art such as the case, so this creation is more in the production than the prior art of the Republic of China Patent Publication No. 200427030. In addition, U.S. Patent No. 2005276979 discloses a synthetic substrate containing a diamond coating, which is composed of a ceramic material and a carbonized material, and deposits a diamond coating by chemical vapor deposition for application. For the polishing head of the polishing head or the disc, the insert and the tip of the cutting tool, M407489, however, the synthetically created high-conductivity innovative electronic device for the heat sink or mechanical seal of the wear component, the board does not contain metal layers and Compared with the packaging materials, the thermal integrated circuit carrier board is clear in its composition and use. - A good conductor of general heat is also a good conductor of electricity, and vice versa. = Diamond is a special case. The highest thermal conductivity. Therefore, it is very suitable for the integrated circuit (|c) carrier for power and surface current density electronic components. [New content] In order to solve the above problems, 'The creator is actively engaged in research, SI: Providing a new integrated circuit (丨c) carrier board for electronic components that will generate high heat in the future' has undergone continuous trials and efforts. This creation. , * Network praised ^ to achieve the above purpose, the creation of high thermal conductivity integrated circuit carrier board is basically = Naruto uses materials with high thermal conductivity, such as copper, aluminum and other metals or such as carbon material: Γ 铍 铍 (Be0) , III Oxidation (8) 2. 3) Non-metallic materials such as the base of the new type of carrier plate, and a diamond film deposited thereon. Further, if the substrate is made of a metal material, = a bonding layer having at least a metal such as a m-mound or a wrong metal is provided. The diamond layer plated in the present invention may have the function of insulation, which may be composed of a stone or a diamond-like structure, and the structure may be an amorphous structure, a single crystal structure or a polycrystalline structure to make the creation of the creation The circuit carrier has the function of fast heat conduction and dispersion. In addition, the diamond layer of this creation can also have the function of conducting electricity, which can be a doping town, and a nitrogen (Ν) element: a conductive boat formed by biting 5 M407489. The diamond layer deposition method includes φ deposition method (CVD), plasma assisted vapor deposition (PECVD), resistance heating vapor deposition method, microwave arc method I, and the present invention:::product method, and DC The integrated circuit carrier of the A 1 门 导 ...... can be composed of a structure with multiple layers of diamonds and conductive layers. The surface of the diamond layer of the integrated circuit board may be provided with a metal layer of copper or the like and the conductive layer may be provided between the diamond layer and the conductive layer, at least by chrome, titanium, money, and the like. The bonding layer is composed of the conductive layer which can be coated on the surface of the bonding layer by (4) (4), m electron beam evaporation (four) printing. By the above method, the present invention can combine the diamond with the best heat conduction effect and the conductive metal into a carrier plate having an excellent heat transfer effect, so that the high heat generated by the electronic component can be quickly dissipated by heat conduction. A high thermal conductivity integrated circuit (1C) carrier is formed. The high thermal conductivity integrated circuit carrier of the present invention can further be provided with a package material of a wafer and a coated wafer on the surface of the conductive layer to form a high thermal conductivity package integrated circuit (丨C) carrier. The high thermal conductivity integrated circuit carrier board can form various electronic components according to requirements, including but not limited to: surface acoustic wave filter, organic light emitting diode and array combination component thereof, inorganic light emitting diode and array combination component thereof , laser diodes and body circuits. [Embodiment] The present invention relates to an integrated circuit (丨c) carrier board for electronic component packaging, which can quickly conduct high-heating generated by the operation of electronic components. The integrated circuit (IC) carrier is a composite structure consisting of a diamond layer of diamonds and a metal having a coefficient such as copper or aluminum. , the heat transfer method used in the creation of the diamond layer deposition method, can be used in many years of chemical vapor deposition (10) emical vapo "dep〇sm〇r;
CVD)，其原理是將甲垸或其他含錢體在高溫下分解同 時以過量之氫原子(如體積百分比約99%)作為催化劑，使得 沉積出來的碳結合成鑽石或類鑽石膜。此外，上述鑽石膜 層或類鑽石膜的沉積方式尚有許多種，包括有電漿辅助氣 相沉積方法（PECVD)、電阻加熱氣相沉積方法（h〇t filament)、微波激盪氣相沉積方法（mjc「〇wave 及直流電弧（DC arc)方法等。本創作所使用之鑽石層可由鑽 石或類鑽石膜所組成，其結構可以為非結晶質結構、單晶 結構或多晶質結構等絕緣性結構。此外，該鑽石或類鑽石 膜之鑽石層組成亦可以摻雜硼（B)、氮（N)等元素以形成導電 性結構。當基板係由銅、鋁等金屬所組成之高傳熱係數金 屬材料時，則基板與鑽石層間可設有至少由鉻、鉬、鎢、 鈦、猛、鍺等金屬所組成之接合層。 此外’本創作之鑽石層表面可進一步含有接合層與導 電層’其中接合層可以至少由鉻、鉬、鎢、鈦、錳、鍺等 金屬所組成’而導電層可由銅等金屬所組成。導電層可以 熟知之物理氣相沉積法（phySjca| vapor deposition，PVD) 製作’如減錄(sputtering)、熱蒸鐘（thermal evaporation)、 電子束蒸鍍（e-beam evaporation)或是以印刷方式將導電 層塗佈在鑽石層上。 7 M407489 以下為本創作較佳的實施例，進—步詳述本創作的特 點及功效。惟，該等實施細節僅係用於說明本創作之特點 而非以侷限本創作之範_。 f施例1 :積艚電路（丨〇盤；te 本創作係選用高熱傳導係數之非金屬材料_碳化石夕（Sjc) 作為積體電路（IC)載板之基板（1)，如圖一所示，並利用化 學氣相沉積法（chemical vapor deposition, CVD)減鑛鑽石 屬（2)於基板（1)表面，再利用藏鑛方法於鑽石層（？）表面分別 沉積鉻（3)金屬材料作為接合層、銅（4)金屬材料作為導電 層’即可製備完成具有高熱傳導效果的積體電路（丨c)載板。 t施例2 : Μ类籍餿電路（IC)钹拓 如圖二所示，利用實施例1所製備的積體電路（I c)載板 (其中該積體電路（IC)載板係包含有基板（1)、鑽石層（2)、鉻 (3)金屬材料作為接合層與銅金屬材料作為導電層所組 成）之表面上進一步利用錫球（5)與封裝材料（7)將晶片（6)包 覆形成封裝積體電路（IC)載板。 積體電路（IC)載板上之電路可由微電子加工製程 (micro-electric fabrication process)製作，積體電路（ic)晶 片可藉由覆晶方式（FC)、晶片尺寸（CSP)等封裝設置。晶片 與載板間之連線可以錫球（BGA)完成。 因此，本創作之高導熱積體電路（IC)載板，將可藉由載 板上之鑽石所具有的高熱傳導率特性，形成一種可迅速將 M407489 的高熱加以傳導散去，已達到極佳 電子元件運作時所產生 之散熱功效。 【圖式簡單說明】 第 tgjCVD), the principle is to decompose formazan or other rich bodies at high temperatures while using excess hydrogen atoms (e.g., about 99% by volume) as a catalyst to combine the deposited carbon into a diamond or diamond-like film. In addition, there are many types of diamond film or diamond-like film deposited, including plasma assisted vapor deposition (PECVD), resistance heating vapor deposition (h〇t filament), and microwave agitation vapor deposition. (mjc "〇wave and DC arc method, etc. The diamond layer used in this creation can be composed of diamond or diamond-like film, and its structure can be insulated by amorphous structure, single crystal structure or polycrystalline structure. In addition, the diamond layer of the diamond or diamond-like film may also be doped with elements such as boron (B) and nitrogen (N) to form a conductive structure. When the substrate is composed of a metal such as copper or aluminum In the case of a thermal coefficient metal material, a bonding layer composed of at least a metal such as chromium, molybdenum, tungsten, titanium, lanthanum, or lanthanum may be disposed between the substrate and the diamond layer. Further, the surface of the diamond layer of the present invention may further include a bonding layer and a conductive layer. The layer 'where the bonding layer can be composed of at least metal such as chromium, molybdenum, tungsten, titanium, manganese, lanthanum, etc.' and the conductive layer can be composed of a metal such as copper. The conductive layer can be well known by physical vapor deposition (phySjca| Vapor deposition (PVD) Manufactured as 'spinting, thermal evaporation, e-beam evaporation or by printing a conductive layer on a diamond layer. 7 M407489 or less For the preferred embodiment of the creation, the features and functions of the creation are described in detail. However, the implementation details are only used to illustrate the characteristics of the creation and not to limit the scope of the creation. f Example 1 : 艚 艚 艚 te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te te The chemical vapor deposition (CVD) is used to reduce the genus of diamonds (2) on the surface of the substrate (1), and then the chromium (3) metal material is deposited as a bonding layer on the surface of the diamond layer by using a mining method. Copper (4) metal material can be used as a conductive layer to prepare an integrated circuit (丨c) carrier with high heat conduction effect. tExample 2: Μ 馊 馊 馊 circuit (IC) 钹 extension shown in Figure 2 Using the integrated circuit (Ic) carrier plate prepared in Embodiment 1 (which The integrated circuit (IC) carrier plate further comprises a solder ball on a surface including a substrate (1), a diamond layer (2), a chromium (3) metal material as a bonding layer and a copper metal material as a conductive layer). 5) coating the wafer (6) with the package material (7) to form a package integrated circuit (IC) carrier. The circuit on the integrated circuit (IC) carrier board can be fabricated by a micro-electric fabrication process. The integrated circuit (ic) chip can be packaged by a flip chip method (FC), a chip size (CSP) or the like. The connection between the wafer and the carrier can be done with a solder ball (BGA). Therefore, the high thermal conductivity integrated circuit (IC) carrier of this creation will be able to quickly dissipate the high heat of M407489 by the high thermal conductivity characteristics of the diamond on the carrier. The heat dissipation effect produced by the operation of electronic components. [Simple diagram description] tgj
—圖為本創作高導熱積體電路（丨c)載板之結構示意 一 為本創作高導熱封裝積體電路（丨c)載板之結構 (2)鑽石層 (4)導電層 (6)晶片 【主要元件符號說明】 (1)基板 (3)接合層 (5)錫球 (7)封裴材料- The diagram shows the structure of the high thermal conductivity integrated circuit (丨c) carrier board. The structure of the high thermal conductivity package integrated circuit (丨c) carrier board (2) diamond layer (4) conductive layer (6) Wafer [Major component symbol description] (1) Substrate (3) bonding layer (5) Tin ball (7) sealing material