CN106098648A - IGBT heat-radiating substrate and manufacture method, IGBT module and manufacture method thereof - Google Patents
IGBT heat-radiating substrate and manufacture method, IGBT module and manufacture method thereof Download PDFInfo
- Publication number
- CN106098648A CN106098648A CN201610533663.9A CN201610533663A CN106098648A CN 106098648 A CN106098648 A CN 106098648A CN 201610533663 A CN201610533663 A CN 201610533663A CN 106098648 A CN106098648 A CN 106098648A
- Authority
- CN
- China
- Prior art keywords
- heat
- dissipating body
- ceramic
- metal
- line layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
Abstract
The present invention provides a kind of IGBT heat-radiating substrate and manufacture method thereof, IGBT module and manufacture method thereof, this IGBT heat-radiating substrate includes line layer, line layer includes pad, wherein, the side of line layer is provided with ceramic heat-dissipating body and metal heat sink, metal heat sink includes the metallic heat radiating plate with through hole and covered metal plate, ceramic heat-dissipating body is positioned at the through hole of metallic heat radiating plate, covered metal plate connects ceramic heat-dissipating body and the side away from line layer of metal heat sink, pad conducts to covered metal plate after conducting heat to ceramic heat-dissipating body again, organic dielectric is set between metal heat sink and line layer, and organic insulation medium is additionally arranged between ceramic heat-dissipating body and metallic heat radiating plate, this IGBT module also includes the igbt chip being mounted on pad.The present invention also provides for manufacturing above-mentioned heat-radiating substrate and the method for IGBT module.The present invention can improve the heat-sinking capability of IGBT module, and improve it and bear big electric current, high-tension ability.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, relate to a kind of perfect heat-dissipating IGBT heat-radiating substrate,
There is the IGBT module of this IGBT heat-radiating substrate, further relate to IGBT heat sink and the manufacture method of IGBT module.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, be by one by
The compound full-control type voltage driven type power semiconductor that BJT (double pole triode) and MOS (insulating gate type field effect tube) forms
Device, has been widely used on various electronic equipment as a kind of common electronic device.Along with converter contour electric current electricity
The development of subset, has higher requirement to the performance of igbt chip, such as, require that igbt chip bears higher electric current
Deng, but it being as the increase of the electric current that igbt chip bears, the heat produced during its work is also continuously increased, if not in time will
The heat that igbt chip produces distributes, and will have a strong impact on the work of igbt chip, and even affect other electronic devices on circuit board
Work, therefore, the IGBT module with high heat-sinking capability has become as the target that industry is pursued jointly.
Existing igbt chip is generally housed on circuit board, and generally, circuit board side is provided with heat sink, in order to realize dissipating
The insulation of hot plate, the generally side at heat sink arrange potsherd, and igbt chip is generally encapsulated in pottery by paster technique
On sheet, so, igbt chip is connected with heat sink by potsherd, the heat of igbt chip generation will by potsherd conduct to
On heat sink, by heat sink, heat is distributed to air.
But, owing to igbt chip is directly against being contained on potsherd, the heat-sinking capability of IGBT module is not enough, and IGBT module
The maximum voltage, the maximum current that bear are also restrained, cause pressure, the heat-sinking capability of IGBT module can not meet electronic equipment
Requirement.
Summary of the invention
The first object of the present invention is to provide that a kind of voltage endurance capability is good and the IGBT heat-radiating substrate of perfect heat-dissipating.
The second object of the present invention is to provide the manufacture method of a kind of above-mentioned IGBT heat-radiating substrate.
The third object of the present invention is to provide that a kind of voltage endurance capability is good and the IGBT module of perfect heat-dissipating.
The fourth object of the present invention is to provide the manufacture method of a kind of above-mentioned IGBT module.
In order to realize the first above-mentioned purpose, the IGBT heat-radiating substrate that the present invention provides includes that line layer, line layer include
Having pad, wherein, the side of line layer is provided with ceramic heat-dissipating body and metal heat sink, and metal heat sink includes with through hole
Metallic heat radiating plate and covered metal plate, ceramic heat-dissipating body is positioned at the through hole of metallic heat radiating plate, and covered metal plate connects pottery
Radiator and the side away from line layer of metal heat sink, pad conducts heat to conduction extremely covering again after ceramic heat-dissipating body
On metallic plate, organic dielectric is set between metal heat sink and line layer, and organic insulation medium is additionally arranged at pottery and dissipates
Between hot body and metallic heat radiating plate.
From such scheme, being embedded with ceramic heat-dissipating body in heat-radiating substrate, igbt chip is not directly against being contained in pottery
On radiator, but it is mounted on line layer, conducts heat to ceramic heat-dissipating body by pad, then conduct from ceramic heat-dissipating body
To covered metal plate, heat conducting power is higher, is conducive to improving the heat dispersion of IGBT module.Further, dissipate due to metal
Organic dielectric is set between hot device and line layer, so can improve the voltage endurance capability of heat-radiating substrate, improve IGBT module
Pressure performance.
One preferred scheme is, ceramic heat-dissipating body includes a ceramic body, and the upper surface of ceramic body all covers with lower surface
It is stamped layers of copper.
As can be seen here, the ceramic heat-dissipating body of double-sided copper-clad is used can to improve ceramic heat-dissipating body and line layer, covering metal
Cementitiousness between plate, it is also possible to improve the heat-sinking capability of IGBT heat-radiating substrate.
Further scheme is that organic insulation medium includes epoxy resin or silane.Owing to epoxy resin, silane etc. have
There is stronger mobility, and there is after epoxy resin, silane-cure higher intensity, therefore can be effectively improved heat radiation
The pressure performance of substrate.
For realizing the second above-mentioned purpose, the manufacture method of the IGBT heat-radiating substrate that the present invention provides is included in metal basal board
Lower face attachment ceramic heat-dissipating body；Prepreg is placed in the surface being pasted with ceramic heat-dissipating body at metal basal board,
And on the surface placing prepreg, place the metallic heat radiating plate with through hole, make ceramic heat-dissipating body be positioned at through hole, will
Metal basal board and ceramic heat-dissipating body, metallic heat radiating plate, prepreg pressing, make prepreg melt and form organic dielectric,
Organic insulation medium is additionally arranged at metallic heat radiating plate, between ceramic heat-dissipating body and metal basal board；Dissipate at ceramic heat-dissipating body and metal
The side away from metal basal board of hot plate forms covered metal plate；Etching forms line layer on metallic substrates.
From such scheme, the IGBT heat-radiating substrate that should make in aforementioned manners is to be embedded with pottery in heat radiating metal to dissipate
Hot body, owing to ceramic heat-dissipating body has good insulating properties, adds and is filled with organic insulation medium, can be greatly promoted IGBT
The heat dispersion of heat-radiating substrate and pressure performance.
One preferred scheme is, after metal basal board, ceramic heat-dissipating body and metallic heat radiating plate pressing, will overflow in heat radiation
Organic insulation medium at metallic plate and ceramic heat-dissipating surface grinds off.
As can be seen here, by overflow that organic insulation medium at heat-dissipating metal sheet with ceramic heat-dissipating surface grinds off can be true
Protect precipitation formed covered metal plate time covered metal plate and heat-dissipating metal sheet, ceramic heat-dissipating body surface between do not have between be separated with
Machine dielectric, so that it is guaranteed that the heat dispersion of IGBT heat-radiating substrate.
For realizing the 3rd above-mentioned purpose, the IGBT module that the present invention provides includes that heat-radiating substrate, heat-radiating substrate include line
Road floor, line layer includes pad, and pad is pasted with igbt chip, wherein, the side of line layer be provided with ceramic heat-dissipating body with
And metal heat sink, metal heat sink includes the metallic heat radiating plate with through hole and covered metal plate, and ceramic heat-dissipating body is positioned at
In the through hole of metallic heat radiating plate, covered metal plate connects ceramic heat-dissipating body and the side away from line layer of metal heat sink, weldering
Dish conducts to covered metal plate after conducting heat to ceramic heat-dissipating body again, arranges organic between metal heat sink and line layer
Dielectric, and organic insulation medium is additionally arranged between ceramic heat-dissipating body and metallic heat radiating plate.
From such scheme, igbt chip is not directly against being contained on ceramic heat-dissipating body, but is mounted on line layer
Pad on, owing to the lower section of pad arranges ceramic heat-dissipating body, the heat that igbt chip produces can pass through pad, ceramic heat-dissipating
Body conduction to covered metal plate and distributes to air, so can improve the heat dispersion of IGBT module.Further, due to metal
Organic dielectric is set between radiator and line layer, the voltage endurance capability of IGBT module can be improved.
For realizing the 4th above-mentioned purpose, the IGBT module making method that the present invention provides is included in of metal basal board
Ceramic heat-dissipating body is mounted on surface；Prepreg is placed in the surface being pasted with ceramic heat-dissipating body at metal basal board, and is putting
Put and on the surface of prepreg, place the metallic heat radiating plate with through hole, make ceramic heat-dissipating body be positioned at through hole, by metal basal board
With ceramic heat-dissipating body, metallic heat radiating plate, prepreg pressing, make prepreg melt and form organic dielectric, organic insulation
Medium is additionally arranged between metallic heat radiating plate and metal basal board；At ceramic heat-dissipating body and metallic heat radiating plate away from metal basal board
Side forms covered metal plate；Etching forms line layer on metallic substrates, is mounted on the pad of line layer by igbt chip.
As can be seen here, in the IGBT module that should make in aforementioned manners, heat radiating metal is embedded with ceramic heat-dissipating body, due to
Ceramic heat-dissipating body has good insulating properties, adds and is filled with organic insulation medium, can be greatly promoted dissipating of IGBT module
Hot property and pressure performance.
Accompanying drawing explanation
Fig. 1 is the sectional view of IGBT module embodiment of the present invention.
Fig. 2 is the sectional view of the first state in IGBT module making method embodiment manufacturing process of the present invention.
Fig. 3 is the sectional view of the second state in IGBT module making method embodiment manufacturing process of the present invention.
Fig. 4 is the sectional view of the third state in IGBT module making method embodiment manufacturing process of the present invention.
Fig. 5 is the sectional view of the 4th state in IGBT module making method embodiment manufacturing process of the present invention.
Fig. 6 is the sectional view of the 5th state in IGBT module making method embodiment manufacturing process of the present invention.
Below in conjunction with drawings and Examples, the invention will be further described.
Detailed description of the invention
The IGBT module of the present invention has heat-radiating substrate, is pasted with igbt chip on heat-radiating substrate, as it is shown in figure 1, dissipate
Hot substrate includes line layer 10, and line layer 10 forms the pattern of circuit, such as, include that pad 12, igbt chip 13 pass through paster
Technique is mounted on pad 12, therefore, there is tin cream 14 between igbt chip 13 and pad 12.Certainly, line layer 10 except
Including pad 12, also include the circuit connecting other electronic devices.Preferably, line layer 10 is formed by copper coin etching.Need
Bright, the direction of indication of the present invention " on ", D score is to illustrate with the direction shown in Fig. 1 to Fig. 6, but should not be construed as this
Bright restriction.
Heat-radiating substrate, except arranging line layer 10, also includes ceramic heat-dissipating body 20 and metal heat sink, as in figure 2 it is shown,
Ceramic heat-dissipating body 20 includes that a ceramic body 21, ceramic body 21 are aluminium nitride ceramics body, and the upper surface at ceramic body 21 is provided with and covers
Layers of copper 22, the lower surface at ceramic body 21 is provided with copper clad layers 23, and therefore, ceramic heat-dissipating body 20 is that the pottery of a double-sided copper-clad dissipates
Hot body.Ceramic heat-dissipating body 20 is also to be mounted on the lower surface of the copper coin 18 forming line layer 10 by paster technique, therefore exists
Tin cream 24 is had, for ceramic heat-dissipating body 20 being fixed on the lower section of line layer 10 between line layer 10 and ceramic heat-dissipating body 20.
As it is shown in figure 1, heat-radiating substrate includes multiple ceramic heat-dissipating body 20, and metal heat sink includes metallic heat radiating plate
30, metallic heat radiating plate 30 is provided with multiple through hole 31, and multiple ceramic heat-dissipating bodies 20 are separately positioned on the multiple logical of metallic heat radiating plate 30
In hole 31.Preferably, multiple ceramic heat-dissipating bodies 20, metallic heat radiating plate 30 lower surface on same surface, so, it is simple to formed
It is positioned at the covered metal plate 40 of heat-dissipating metal sheet bottom.
In order to realize fixing, in the present embodiment, at gold between metallic heat radiating plate 30 and ceramic heat-dissipating body 20, line layer 10
Belong to, between heat sink 30 and ceramic heat-dissipating body 20, line layer 10, organic dielectric 35 is set, such as insulating epoxy or silicon
Alkane.When manufacturing heat-radiating substrate, use prepreg, i.e. PP sheet is placed between copper coin 18 and metallic heat radiating plate 30, and will be partly
Cured sheets, copper coin 18, metallic heat radiating plate 30 and ceramic heat-dissipating body 20 carry out pressing, in bonding processes, and the prepreg of solid-state
By thawing and form organic dielectric, the organic insulation medium of liquid will be flowed into copper coin 18, metallic heat radiating plate 30 and pottery
Gap location between porcelain radiator 20, i.e. forms state as shown in Figure 3, organic insulation medium after organic insulation media cures
Copper coin 18, metallic heat radiating plate 30 and ceramic heat-dissipating body 20 are fixed by 35.Owing to organic insulation medium has good heat conductivity
Energy and good insulating properties, it is possible to be greatly improved heat-radiating substrate and the heat dispersion of IGBT module and pressure performance.
Covered metal plate 40 is formed at ceramic heat-dissipating body 20 and metallic heat radiating plate 30 by electroless copper plating, plating mode
Lower section, namely covered metal plate 40 is positioned on ceramic heat-dissipating body 20 and the metallic heat radiating plate 30 side away from line layer 10.
Preferably, in the present embodiment, covered metal plate 40 and metallic heat radiating plate 30 are layers of copper.At ceramic heat-dissipating body 20 and metal
The lower section of heat sink 30 arranges covered metal plate 40 can increase the thickness of heat-radiating substrate, and avoids heat dissipation ceramic body 20 direct
It is exposed on the outer surface of heat-radiating substrate, it is ensured that the heat dispersion of heat-radiating substrate.
In the present embodiment, metallic heat radiating plate 30 and covered metal plate 40 constitute metal heat sink, therefore, and heat-radiating substrate
In, multiple ceramic heat-dissipating bodies 20 are to be embedded in metal heat sink by organic insulation medium 35, thus improve heat-radiating substrate
Heat-sinking capability, and the insulating properties of radiator are improved by ceramic heat-dissipating body 20 and organic insulation medium 35.
The manufacture process of IGBT module and heat-radiating substrate is introduced below in conjunction with Fig. 2 to Fig. 6.First, by smooth for copper coin 18,
Clean up, it is thus achieved that one piece of thickness is uniformly and the copper coin of surfacing, it is preferable that the thickness of copper coin 18 more than 0.3 micron,
Even more than 0.5 micron, so that it is guaranteed that the thickness of line layer 10.
After smooth for copper coin 18, by paster technique, ceramic heat-dissipating body 20 is mounted on a surface of copper coin 18,
As shown in Figure 2, multiple ceramic heat-dissipating bodies 20 are mounted on the lower surface of copper coin 18, and each ceramic heat-dissipating body 20 is equal
The ceramic heat-dissipating body of copper is covered for two sides.In the present embodiment, the copper clad layers 22 at ceramic heat-dissipating body 20 upper surface and copper coin 18 following table
There is tin cream 24 between face, thus ceramic heat-dissipating body 20 is fixed on copper coin 18.When carrying out paster technique, can be according to actual need
Multiple ceramic heat-dissipating bodies 20 it is mounted on copper coin 18, and between multiple ceramic heat-dissipating body 20, to there is certain gap.
Then, as it is shown on figure 3, the gap location between multiple ceramic heat-dissipating bodies 20 places prepreg and solid half
Metallic heat radiating plate 30 is placed in the lower section changing sheet, and prepreg is actually the organic insulation medium of solid-state.Further, metallic heat radiating plate
30 is the metallic heat radiating plate with multiple through holes 31, and when placing metallic heat radiating plate 30, through hole 31 is directed at a ceramic heat-dissipating
Body 20, in order to ceramic heat-dissipating body 20 is positioned at through hole 31.
Owing to prepreg is between copper coin 18, metallic heat radiating plate 30, by copper coin 18, metallic heat radiating plate 30, semi-solid preparation
After sheet and ceramic heat-dissipating body 20 carry out high-temperature laminating, prepreg forms the organic insulation medium 35 of liquid by melting, thus
By organic insulation medium 35 binding metal heat sink 30 and ceramic heat-dissipating body 20.So, ceramic heat-dissipating body 20 is embedded in gold
Belong in heat sink 30 and copper coin 18, make copper coin 18, ceramic heat-dissipating body 20 and metallic heat radiating plate 30 form the structure of integration,
Ceramic heat-dissipating body 20 is fixed in copper coin 18 and metallic heat radiating plate 30.
After pressing, part organic insulation medium 35 is spilled off the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30,
As it is shown on figure 3, have the spilling portion of organic insulation medium 35 outside the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30
Divide 36, be subsequently formed covered metal plate 40 to not affect, need to grind off the spilling part 36 of organic insulation medium 35.Example
As, spilling part 36 is ground off, as shown in Figure 4 by the instrument such as cutter or milling apparatus of use.
So, the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30 is smooth, and due to ceramic heat-dissipating body 20
Lower surface is provided with copper clad layers 23, after therefore grinding off the spilling part 36 of organic insulation medium 35, and the following table of the semi-finished product shown in Fig. 4
Face is layers of copper or organic insulation medium 35.
Then, by the way of electroless copper plating and plating, on the basis of the semi-finished product of Fig. 4, covered metal plate 40 is formed, i.e.
First with change on the lower surface of heat-dissipating metal sheet 30 after grinding off the spillings part 36 of organic insulation medium 35, ceramic heat-dissipating body 20
The mode learning heavy copper is initially formed the layers of copper that a layer thickness is less, is then formed in the layers of copper that thickness is less by the way of plating
The layers of copper that thickness is thicker, two-layer layers of copper defines covered metal plate 40.Therefore, covered metal plate 40 is also to have copper to become, therefore,
The copper clad layers 23 of ceramic heat-dissipating body 20 combines together with covered metal plate 40, as it is shown in figure 5, be greatly improved the heat radiation of heat-radiating substrate
Performance.
Finally, according to the circuit pattern pre-set, the circuit pattern that etching formation is preset on copper coin 18 is consequently formed
Line layer 10, line layer 10 includes multiple pad 12, as shown in Figure 6.Finally, igbt chip 13 is mounted on line layer 10,
Specifically, each igbt chip 13 is all mounted on corresponding pad 12, forms IGBT module.
Owing to being embedded with multiple ceramic heat-dissipating body 20 in heat-radiating substrate, and by organic insulation medium 35 connection line
Layer 10 and ceramic heat-dissipating body 20, metallic heat radiating plate 30, can be greatly improved the heat dispersion of IGBT module and pressure performance,
Through test, the IGBT module manufactured in aforementioned manners is enable to load higher electric current, such as the electric current of 500 amperes, and energy
The enough voltage of load 40 kilovolts, and thermal conductivity is up to 170 watts/meter × degree.
Further, owing to the present invention is by copper coin 18 and ceramic heat-dissipating body 20, metallic heat radiating plate 30 pressing, thus integral type is formed
Radiator structure, greatly reduces the production cost of IGBT module, and the encapsulation of IGBT module is simpler.
Certainly, above-described embodiment is only the preferred embodiment of the invention, also can have more change, example during actual application
As, line layer, metallic heat radiating plate and covered metal plate not necessarily make to be made of copper, it is possible to use aluminum or other metal materials
Make；Or, the copper plate thickness making line layer can select other size according to practical situation, and such change can't
Affect the enforcement of the present invention.
Finally it is emphasized that and the invention is not restricted to above-mentioned embodiment, changing of material as concrete in ceramic heat-dissipating body
Become, the change such as the material change of organic insulation medium also should include within the scope of the invention as claimed.
Claims (10)
1.IGBT heat-radiating substrate, including
Line layer, described line layer includes pad；
It is characterized in that:
The side of described line layer is provided with ceramic heat-dissipating body and metal heat sink, and described metal heat sink includes with through hole
Metallic heat radiating plate and covered metal plate, described ceramic heat-dissipating body is positioned at the described through hole of described metallic heat radiating plate, described in cover
Lid metallic plate connects described ceramic heat-dissipating body and the described metal heat sink side away from described line layer, and described pad is by heat
Conduction is conducted to described covered metal plate to described ceramic heat-dissipating body again；
It is provided with organic insulation medium between described metal heat sink and described line layer, and described organic insulation medium also sets up
Between described ceramic heat-dissipating body and described metallic heat radiating plate.
IGBT heat-radiating substrate the most according to claim 1, it is characterised in that:
Described ceramic heat-dissipating body includes that a ceramic body, the upper surface of described ceramic body and lower surface are all covered with layers of copper.
IGBT heat-radiating substrate the most according to claim 1 and 2, it is characterised in that:
Described organic insulation medium includes epoxy resin or silane.
4.IGBT module, including
Heat-radiating substrate, described heat-radiating substrate includes that line layer, described line layer include pad, described pad is pasted with IGBT
Chip；
It is characterized in that:
The side of described line layer is provided with ceramic heat-dissipating body and metal heat sink, and described metal heat sink includes with through hole
Metallic heat radiating plate and covered metal plate, described ceramic heat-dissipating body is positioned at the described through hole of described metallic heat radiating plate, described in cover
Lid metallic plate connects described ceramic heat-dissipating body and the described metal heat sink side away from described line layer, and described pad is by heat
Conduction is conducted to described covered metal plate to described ceramic heat-dissipating body again；
Fill out between described metal heat sink and described line layer and organic dielectric is set, and described organic insulation medium also sets up
Between described ceramic heat-dissipating body and described metallic heat radiating plate.
IGBT module the most according to claim 4, it is characterised in that:
Described ceramic heat-dissipating body includes that a ceramic body, the upper surface of described ceramic body and lower surface are all covered with layers of copper.
The manufacture method of 6.IGBT heat-radiating substrate, it is characterised in that include
A surface mount ceramic heat-dissipating body at metal basal board；
Prepreg is placed in the described surface being pasted with described ceramic heat-dissipating body at described metal basal board, and described placing
Place the metallic heat radiating plate with through hole on the surface of prepreg, make described ceramic heat-dissipating body be positioned at described through hole, by institute
State metal basal board and described ceramic heat-dissipating body, described metallic heat radiating plate, described prepreg pressing, make described prepreg melt
Form organic dielectric, described in have described organic insulation medium to be arranged on described metal basal board and described ceramic heat-dissipating body, institute
State between metallic heat radiating plate；
Covered metal plate is formed in the side away from described metal basal board of described ceramic heat-dissipating body and described metallic heat radiating plate；
On described metal basal board, etching forms line layer.
The manufacture method of IGBT heat-radiating substrate the most according to claim 6, it is characterised in that:
After described metal basal board, described ceramic heat-dissipating body and described metallic heat radiating plate pressing, will overflow at described heat radiating metal
Described organic insulation medium at plate and described ceramic heat-dissipating surface grinds off.
8. according to the manufacture method of the IGBT heat-radiating substrate described in claim 6 or 7, it is characterised in that:
Described ceramic heat-dissipating body includes that a ceramic body, the upper surface of described ceramic body and lower surface are all covered with layers of copper；
Described covered metal plate is formed at the side of the layers of copper of described ceramic body lower surface.
The manufacture method of 9.IGBT module, it is characterised in that include
A surface of metal basal board mounts ceramic heat-dissipating body；
Prepreg is placed in the described surface being pasted with described ceramic heat-dissipating body at described metal basal board, and described placing
Place the metallic heat radiating plate with through hole on the surface of prepreg, make described ceramic heat-dissipating body be positioned at described through hole, by institute
State metal basal board and described ceramic heat-dissipating body, described metallic heat radiating plate, described prepreg pressing, make described prepreg melt
Forming organic dielectric, described organic insulation medium is arranged on described metallic heat radiating plate and described ceramic heat-dissipating body, described gold
Belong between substrate；
Covered metal plate is formed in the side away from described metal basal board of described ceramic heat-dissipating body and described metallic heat radiating plate；
On described metal basal board, etching forms line layer, is mounted on by igbt chip on the pad of described line layer.
The manufacture method of IGBT module the most according to claim 9, it is characterised in that:
After described metal basal board, described ceramic heat-dissipating body and described metallic heat radiating plate pressing, will overflow at described heat radiating metal
Described organic insulation medium at plate and described ceramic heat-dissipating surface grinds off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610533663.9A CN106098648B (en) | 2016-07-07 | 2016-07-07 | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610533663.9A CN106098648B (en) | 2016-07-07 | 2016-07-07 | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106098648A true CN106098648A (en) | 2016-11-09 |
| CN106098648B CN106098648B (en) | 2018-05-18 |
Family
ID=57213458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610533663.9A Active CN106098648B (en) | 2016-07-07 | 2016-07-07 | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106098648B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018133070A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Circuit substrate and manufacturing method therefor, and circuit board and manufacturing method therefor |
| WO2018133069A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Igbt module and method for manufacturing same |
| US11412618B2 (en) | 2020-12-29 | 2022-08-09 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
| US11439039B2 (en) | 2020-12-07 | 2022-09-06 | Hamilton Sundstrand Corporation | Thermal management of electronic devices on a cold plate |
| US11439018B2 (en) | 2020-12-29 | 2022-09-06 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102811554A (en) * | 2011-06-02 | 2012-12-05 | 熊大曦 | Base plate for high-power electronic device module and preparation method thereof |
| CN103188890B (en) * | 2011-12-30 | 2016-03-16 | 北大方正集团有限公司 | A kind of manufacture method of pcb board and a kind of pcb board |
| CN202444696U (en) * | 2012-02-27 | 2012-09-19 | 孙井斌 | High-thermal conductivity combined circuit board |
-
2016
- 2016-07-07 CN CN201610533663.9A patent/CN106098648B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018133070A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Circuit substrate and manufacturing method therefor, and circuit board and manufacturing method therefor |
| WO2018133069A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Igbt module and method for manufacturing same |
| US11107744B2 (en) | 2017-01-22 | 2021-08-31 | Rayben Technologies (Zhuhai) Limited | Insulated gate bipolar transistor module and manufacturing method thereof |
| US11439039B2 (en) | 2020-12-07 | 2022-09-06 | Hamilton Sundstrand Corporation | Thermal management of electronic devices on a cold plate |
| US11412618B2 (en) | 2020-12-29 | 2022-08-09 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
| US11439018B2 (en) | 2020-12-29 | 2022-09-06 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106098648B (en) | 2018-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107078110B (en) | IGBT module and manufacturing method thereof | |
| TWI703681B (en) | Power overlay structure and method of making same | |
| CN106098648B (en) | IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method | |
| CN104716109B (en) | With packaging part of thermal management component for reducing hot crosstalk and forming method thereof | |
| CN108133915B (en) | Power module with built-in power device and double-sided heat dissipation function and manufacturing method thereof | |
| US10163754B2 (en) | Lid design for heat dissipation enhancement of die package | |
| EP2664228B1 (en) | Devices having anisotropic conductivity heatsinks, and methods of making thereof | |
| US10249551B2 (en) | Electronic component having a heat-sink thermally coupled to a heat-spreader | |
| CN207320090U (en) | Electronic device and electronic chip | |
| CN107039289A (en) | The thermobond materials of heat with restriction, mechanically and electrically characteristic | |
| US10818574B2 (en) | Plug-in type power module and subsystem thereof | |
| CN107039374A (en) | The connected structure of functionalization | |
| US11387159B2 (en) | Chip package | |
| CN104900782A (en) | Method of making thermally enhanced wiring board having isolator incorporated therein | |
| US10064287B2 (en) | System and method of providing a semiconductor carrier and redistribution structure | |
| CN109417062B (en) | Cooled electronic package with stacked power electronic components | |
| CN102800636A (en) | Electronic component package and manufacturing method thereof | |
| WO2023142487A1 (en) | Packaging module and preparation method therefor, and electronic device | |
| WO2012081434A1 (en) | Semiconductor device | |
| JP2004087735A (en) | Semiconductor device | |
| CN202444696U (en) | High-thermal conductivity combined circuit board | |
| Bao et al. | Thermal management technology of IGBT modules based on two-dimensional materials | |
| JP2011238643A (en) | Power semiconductor module | |
| CN107734838B (en) | PCB capable of fast radiating | |
| CN109348616A (en) | A kind of wiring board and preparation method thereof with heat conduction structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Lin Weijian Inventor before: Zhong Shan Inventor before: Hu Qizhao Inventor before: Li Guoqing Inventor before: Lin Weijian |
|
| CB03 | Change of inventor or designer information |