CN106098648B - IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method - Google Patents
IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method Download PDFInfo
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- CN106098648B CN106098648B CN201610533663.9A CN201610533663A CN106098648B CN 106098648 B CN106098648 B CN 106098648B CN 201610533663 A CN201610533663 A CN 201610533663A CN 106098648 B CN106098648 B CN 106098648B
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Abstract
The present invention provides a kind of IGBT heat-radiating substrates and its manufacturing method, IGBT modules and its manufacturing method, the IGBT heat-radiating substrates include line layer, line layer includes pad, wherein, the one side of line layer is equipped with ceramic heat-dissipating body and metal heat sink, metal heat sink includes metallic heat radiating plate and covered metal plate with through hole, ceramic heat-dissipating body is located in the through hole of metallic heat radiating plate, covered metal plate connects the one side of the separate line layer of ceramic heat-dissipating body and metal heat sink, pad is conducted to covered metal plate again after conducting heat to ceramic heat-dissipating body, organic dielectric is set between metal heat sink and line layer, and organic insulation medium is additionally arranged between ceramic heat-dissipating body and metallic heat radiating plate, the IGBT modules further include the igbt chip being mounted on pad.The present invention also provides the methods for manufacturing above-mentioned heat-radiating substrate and IGBT modules.The present invention can improve the heat-sinking capability of IGBT modules, and improve it and bear high current, the ability of high voltage.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, be related to a kind of perfect heat-dissipating IGBT heat-radiating substrates,
IGBT modules with this IGBT heat-radiating substrates further relate to the manufacturing method of IGBT heat sinks and IGBT modules.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, be by one kind by
The compound full-control type voltage driven type power semiconductor of BJT (double pole triode) and MOS (insulating gate type field effect tube) compositions
Device has been widely used in as a kind of common electronic device on various electronic equipments.With the high currents such as frequency converter electricity
The development of sub- equipment proposes higher requirement to the performance of igbt chip, such as igbt chip is required to bear higher electric current
Deng, but the increase of the electric current born with igbt chip, the heat that when work generates also is continuously increased, if not in time will
The heat that igbt chip generates distributes, and by the work for seriously affecting igbt chip or even influences other electronic devices on circuit board
Work, therefore, have high heat-sinking capability IGBT modules have become the target that industry is pursued jointly.
Existing igbt chip is generally housed on circuit board, in general, circuit board one side is equipped with heat sink, it is scattered in order to realize
The insulation of hot plate usually sets potsherd in the one side of heat sink, and igbt chip is usually encapsulated in ceramics by paster technique
On piece, in this way, igbt chip is connected by potsherd with heat sink, heat that igbt chip generates will be conducted by potsherd to
On heat sink, heat is distributed into air by heat sink.
However, since igbt chip is directly mounted on potsherd, the heat-sinking capability deficiency of IGBT modules, and IGBT modules
Maximum voltage, the maximum current born is also restrained, causes the pressure-resistant of IGBT modules, heat-sinking capability that cannot meet electronic equipment
Requirement.
The content of the invention
The first object of the present invention is to provide that a kind of voltage endurance capability is good and the IGBT heat-radiating substrates of perfect heat-dissipating.
The second object of the present invention is to provide a kind of manufacturing method of above-mentioned IGBT heat-radiating substrates.
The third object of the present invention is to provide that a kind of voltage endurance capability is good and the IGBT modules of perfect heat-dissipating.
The fourth object of the present invention is to provide a kind of manufacturing method of above-mentioned IGBT modules.
In order to realize the first above-mentioned purpose, IGBT heat-radiating substrates provided by the invention include line layer, and line layer includes
There is pad, wherein, the one side of line layer is equipped with ceramic heat-dissipating body and metal heat sink, and metal heat sink is included with through hole
Metallic heat radiating plate and covered metal plate, ceramic heat-dissipating body are located in the through hole of metallic heat radiating plate, covered metal plate connection ceramics
The one side of the separate line layer of radiator and metal heat sink, pad, which is conducted heat to after ceramic heat-dissipating body, to be conducted again to covering
Organic dielectric is set on metallic plate, between metal heat sink and line layer, and organic insulation medium is additionally arranged at ceramics and dissipates
Between hot body and metallic heat radiating plate.
By said program as it can be seen that being embedded with ceramic heat-dissipating body in heat-radiating substrate, igbt chip is not to be directly mounted on ceramics
It on radiator, but is mounted on line layer, ceramic heat-dissipating body is conducted heat to by pad, then is conducted from ceramic heat-dissipating body
To covered metal plate, heat conducting power is stronger, is conducive to improve the heat dissipation performance of IGBT modules.Also, since metal dissipates
Organic dielectric between hot device and line layer is set, can so improve the voltage endurance capability of heat-radiating substrate, improves IGBT modules
Pressure-resistant performance.
One preferred scheme is that ceramic heat-dissipating body includes a ceramic body, and the upper surface of ceramic body is covered with lower surface
It is stamped layers of copper.
It can be seen that ceramic heat-dissipating body and line layer, covering metal can be improved using the ceramic heat-dissipating body of double-sided copper-clad
Cementitiousness between plate can also improve the heat-sinking capability of IGBT heat-radiating substrates.
Further embodiment is that organic insulation medium includes epoxy resin or silane.Due to tools such as epoxy resin, silane
There is stronger mobility, and there is higher intensity after epoxy resin, silane-cure, therefore heat dissipation can be effectively improved
The pressure-resistant performance of substrate.
To realize the second above-mentioned purpose, the manufacturing method of IGBT heat-radiating substrates provided by the invention is included in metal substrate
A lower face attachment ceramic heat-dissipating body；Placement prepreg at the surface of ceramic heat-dissipating body is pasted in metal substrate,
And the metallic heat radiating plate with through hole is placed on the surface for placing prepreg, ceramic heat-dissipating body is made to be located in through hole, it will
Metal substrate is pressed with ceramic heat-dissipating body, metallic heat radiating plate, prepreg, and prepreg is made to melt to form organic dielectric,
Organic insulation medium is additionally arranged between metallic heat radiating plate, ceramic heat-dissipating body and metal substrate；It is dissipated in ceramic heat-dissipating body and metal
The one side of the separate metal substrate of hot plate forms covered metal plate；Etching forms line layer on metallic substrates.
By said program as it can be seen that being to be embedded with ceramics in heat radiating metal to dissipate using the IGBT heat-radiating substrates that the above method makes
Hot body since ceramic heat-dissipating body has good insulation performance, in addition filled with organic insulation medium, can greatly promote IGBT
The heat dissipation performance of heat-radiating substrate and pressure-resistant performance.
One preferred scheme is, after being pressed to metal substrate, ceramic heat-dissipating body and metallic heat radiating plate, is radiating overflowing
Metallic plate is ground off with the organic insulation medium at ceramic heat-dissipating body surface face.
It can be true it can be seen that the organic insulation medium overflowed at heat-dissipating metal sheet with ceramic heat-dissipating body surface face is ground off
Precipitation is protected to be separated with without between the surface of covered metal plate and heat-dissipating metal sheet, ceramic heat-dissipating body when forming covered metal plate
Machine dielectric, so that it is guaranteed that the heat dissipation performance of IGBT heat-radiating substrates.
To realize the 3rd above-mentioned purpose, IGBT modules provided by the invention include heat-radiating substrate, and heat-radiating substrate includes line
Road floor, line layer include pad, igbt chip are pasted on pad, wherein, the one side of line layer be equipped with ceramic heat-dissipating body with
And metal heat sink, metal heat sink include metallic heat radiating plate and covered metal plate with through hole, ceramic heat-dissipating body is located at
In the through hole of metallic heat radiating plate, the one side of the separate line layer of covered metal plate connection ceramic heat-dissipating body and metal heat sink, weldering
Disk is conducted to covered metal plate again after conducting heat to ceramic heat-dissipating body, is set between metal heat sink and line layer organic
Dielectric, and organic insulation medium is additionally arranged between ceramic heat-dissipating body and metallic heat radiating plate.
By said program as it can be seen that igbt chip is not to be directly mounted on ceramic heat-dissipating body, but it is mounted on line layer
Pad on, due to pad lower section set ceramic heat-dissipating body, igbt chip generate heat can pass through pad, ceramic heat-dissipating
Body is conducted to covered metal plate and distributed into air, can so improve the heat dissipation performance of IGBT modules.Also, due to metal
Organic dielectric between radiator and line layer is set, the voltage endurance capability of IGBT modules can be improved.
To realize the 4th above-mentioned purpose, IGBT module making methods provided by the invention are included in one of metal substrate
Ceramic heat-dissipating body is mounted on surface；Placement prepreg at the surface of ceramic heat-dissipating body is pasted in metal substrate, and is being put
It puts and the metallic heat radiating plate with through hole is placed on the surface of prepreg, ceramic heat-dissipating body is made to be located in through hole, by metal substrate
It is pressed with ceramic heat-dissipating body, metallic heat radiating plate, prepreg, prepreg is made to melt to form organic dielectric, organic insulation
Medium is additionally arranged between metallic heat radiating plate and metal substrate；In the separate metal substrate of ceramic heat-dissipating body and metallic heat radiating plate
One side forms covered metal plate；Etching forms line layer on metallic substrates, and igbt chip is mounted on the pad of line layer.
It can be seen that using the above method make IGBT modules in, ceramic heat-dissipating body is embedded in heat radiating metal, due to
Ceramic heat-dissipating body has good insulation performance, in addition filled with organic insulation medium, can greatly promote dissipating for IGBT modules
Hot property and pressure-resistant performance.
Description of the drawings
Fig. 1 is the sectional view of IGBT modules embodiment of the present invention.
Fig. 2 is the sectional view of the first state in IGBT module making methods embodiment manufacturing process of the present invention.
Fig. 3 is the sectional view of the second state in IGBT module making methods embodiment manufacturing process of the present invention.
Fig. 4 is the sectional view of the third state in IGBT module making methods embodiment manufacturing process of the present invention.
Fig. 5 is the sectional view of the 4th state in IGBT module making methods embodiment manufacturing process of the present invention.
Fig. 6 is the sectional view of the 5th state in IGBT module making methods embodiment manufacturing process of the present invention.
The invention will be further described with reference to the accompanying drawings and embodiments.
Specific embodiment
The IGBT modules of the present invention have heat-radiating substrate, and igbt chip is pasted on heat-radiating substrate, as shown in Figure 1, dissipating
Hot substrate includes line layer 10, and line layer 10 forms the pattern of circuit, such as including pad 12, igbt chip 13 passes through patch
Technique is mounted on pad 12, and therefore, there are tin creams 14 between igbt chip 13 and pad 12.Certainly, line layer 10 except
Including pad 12, the circuit for connecting other electronic devices is further included.Preferably, line layer 10 is etched by copper coin.It needs
It is bright, the signified direction of the present invention " on ", " under " it is to be illustrated with the direction shown in Fig. 1 to Fig. 6, but should not be construed as to this hair
Bright restriction.
Heat-radiating substrate except set line layer 10, further include ceramic heat-dissipating body 20 and metal heat sink, as shown in Fig. 2,
Ceramic heat-dissipating body 20 includes a ceramic body 21, and ceramic body 21 is aluminium nitride ceramics body, is equipped with and covers in the upper surface of ceramic body 21
Layers of copper 22 is equipped with copper clad layers 23 in the lower surface of ceramic body 21, and therefore, ceramic heat-dissipating body 20 is that the ceramics of a double-sided copper-clad dissipate
Hot body.Ceramic heat-dissipating body 20 is also to be mounted on by paster technique on the lower surface for the copper coin 18 to form line layer 10, therefore
There is tin cream 24 between line layer 10 and ceramic heat-dissipating body 20, for ceramic heat-dissipating body 20 to be fixed on to the lower section of line layer 10.
As shown in Figure 1, heat-radiating substrate includes multiple ceramic heat-dissipating bodies 20, and metal heat sink includes metallic heat radiating plate
30, metallic heat radiating plate 30 is equipped with multiple through holes 31, and multiple ceramic heat-dissipating bodies 20 are separately positioned on the multiple logical of metallic heat radiating plate 30
In hole 31.Preferably, the lower surface of multiple ceramic heat-dissipating bodies 20, metallic heat radiating plate 30 is on same surface, in this way, convenient for being formed
Positioned at the covered metal plate 40 of heat-dissipating metal sheet bottom.
In order to realize the fixation between metallic heat radiating plate 30 and ceramic heat-dissipating body 20, line layer 10, in the present embodiment, in gold
Belong to and organic dielectric 35 is set between heat sink 30 and ceramic heat-dissipating body 20, line layer 10, such as insulating epoxy or silicon
Alkane.When manufacturing heat-radiating substrate, using prepreg, i.e. PP pieces are placed between copper coin 18 and metallic heat radiating plate 30, and will be partly
Cured sheets, copper coin 18, metallic heat radiating plate 30 and ceramic heat-dissipating body 20 are pressed, in bonding processes, solid prepreg
It will melt and form organic dielectric, the organic insulation medium of liquid will be flowed into copper coin 18, metallic heat radiating plate 30 and pottery
Gap location between porcelain radiator 20 forms state as shown in Figure 3, organic insulation medium after organic insulation media cures
35 fix copper coin 18, metallic heat radiating plate 30 and ceramic heat-dissipating body 20.Since organic insulation medium has good thermal conductivity
Energy and good insulation performance, can greatly improve the heat dissipation performance of heat-radiating substrate and IGBT modules and pressure-resistant performance.
Covered metal plate 40 is formed in ceramic heat-dissipating body 20 and metallic heat radiating plate 30 by electroless copper plating, plating mode
Lower section, that is, covered metal plate 40 are located on the one side of ceramic heat-dissipating body 20 and metallic heat radiating plate 30 away from line layer 10.
Preferably, in the present embodiment, covered metal plate 40 and metallic heat radiating plate 30 are layers of copper.In ceramic heat-dissipating body 20 and metal
The lower section of heat sink 30 sets covered metal plate 40 that can increase the thickness of heat-radiating substrate, and avoids heat dissipation ceramic body 20 direct
It is exposed on the outer surface of heat-radiating substrate, it is ensured that the heat dissipation performance of heat-radiating substrate.
In the present embodiment, metallic heat radiating plate 30 and covered metal plate 40 form metal heat sink, therefore, heat-radiating substrate
In, multiple ceramic heat-dissipating bodies 20 are to be embedded in by organic insulation medium 35 in metal heat sink, so as to improve heat-radiating substrate
Heat-sinking capability, and improve by ceramic heat-dissipating body 20 and organic insulation medium 35 insulation performance of radiator.
The manufacturing process of IGBT modules and heat-radiating substrate is introduced with reference to Fig. 2 to Fig. 6.First, by copper coin 18 it is smooth,
Clean up, obtain one piece of thickness uniformly and the copper coin of surfacing, it is preferable that the thickness of copper coin 18 at 0.3 micron or more,
Even at 0.5 micron or more, so that it is guaranteed that the thickness of line layer 10.
By copper coin 18 it is smooth after, ceramic heat-dissipating body 20 is mounted on a surface of copper coin 18 by paster technique,
As shown in Figure 2, multiple ceramic heat-dissipating bodies 20 are mounted on the lower surface of copper coin 18, and each ceramic heat-dissipating body 20 is equal
The ceramic heat-dissipating body of copper is covered for two sides.In the present embodiment, copper clad layers 22 and 18 following table of copper coin at 20 upper surface of ceramic heat-dissipating body
There is tin cream 24 between face, thus ceramic heat-dissipating body 20 is fixed on copper coin 18.It, can be according to actual need when carrying out paster technique
Multiple ceramic heat-dissipating bodies 20 are mounted on copper coin 18, and there is certain gap between multiple ceramic heat-dissipating bodies 20.
Then, as shown in figure 3, the gap location between multiple ceramic heat-dissipating bodies 20 places prepreg, and it is solid half
Metallic heat radiating plate 30 is placed in the lower section for changing piece, and prepreg is actually solid organic insulation medium.Also, metallic heat radiating plate
30 be the metallic heat radiating plate with multiple through holes 31, and during placement metallic heat radiating plate 30, through hole 31 is directed at a ceramic heat-dissipating
Body 20, so that ceramic heat-dissipating body 20 is located in through hole 31.
Since prepreg is between copper coin 18, metallic heat radiating plate 30, by copper coin 18, metallic heat radiating plate 30, semi-solid preparation
After piece and ceramic heat-dissipating body 20 carry out high-temperature laminating, prepreg forms the organic insulation medium 35 of liquid by melting, thus
Pass through 35 binding metal heat sink 30 of organic insulation medium and ceramic heat-dissipating body 20.In this way, ceramic heat-dissipating body 20 is embedded in gold
Belong in heat sink 30 and copper coin 18, copper coin 18, ceramic heat-dissipating body 20 and metallic heat radiating plate 30 made to form integrated structure,
Ceramic heat-dissipating body 20 is fixed in copper coin 18 and metallic heat radiating plate 30.
After pressing, part organic insulation medium 35 is spilled off the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30,
As shown in figure 3, there is the spilling portion of organic insulation medium 35 outside the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30
Divide 36, in order to not influence covered metal plate 40 is subsequently formed, it is necessary to which the spilling part 36 of organic insulation medium 35 is ground off.Example
Such as, ground off using instruments such as cutter or milling apparatus by part 36 is overflowed, as shown in Figure 4.
In this way, the lower surface of ceramic heat-dissipating body 20 and heat-dissipating metal sheet 30 is smooth, and due to ceramic heat-dissipating body 20
Lower surface is equipped with copper clad layers 23, therefore after grinding off the spilling part 36 of organic insulation medium 35, the following table of semi-finished product shown in Fig. 4
Face is layers of copper or organic insulation medium 35.
Then, covered metal plate 40 is formed on the basis of the semi-finished product of Fig. 4 by way of electroless copper plating and plating, i.e.,
First grind off organic insulation medium 35 overflow part 36 after heat-dissipating metal sheet 30, ceramic heat-dissipating body 20 lower surface on change
The mode for learning heavy copper is initially formed the smaller layers of copper of a layer thickness, is then formed by way of plating in the smaller layers of copper of thickness
The thicker layers of copper of thickness, two layers of layers of copper form covered metal plate 40.Therefore, covered metal plate 40 be also have copper into, therefore,
The copper clad layers 23 of ceramic heat-dissipating body 20 combine together with covered metal plate 40, as shown in figure 5, greatly improving the heat dissipation of heat-radiating substrate
Performance.
Finally, according to pre-set circuit pattern, on copper coin 18 etching form default circuit pattern and be consequently formed
Line layer 10, line layer 10 include multiple pads 12, as shown in Figure 6.Finally, igbt chip 13 is mounted on line layer 10,
Specifically, each igbt chip 13 is mounted on corresponding pad 12, forms IGBT modules.
Circuit is connected due to being embedded with multiple ceramic heat-dissipating bodies 20 in heat-radiating substrate, and by organic insulation medium 35
Layer 10 and ceramic heat-dissipating body 20, metallic heat radiating plate 30, can greatly improve the heat dissipation performance of IGBT modules and pressure-resistant performance,
By test, the IGBT modules manufactured using the above method can load higher electric current, such as 500 amperes of electric current, and energy
40 kilovolts of voltage is enough loaded, and thermal conductivity is up to 170 watts/meter × degree.
Also, since the present invention presses copper coin 18 and ceramic heat-dissipating body 20, metallic heat radiating plate 30, so as to form integral type
Radiator structure, greatly reduces the production cost of IGBT modules, and the encapsulation of IGBT modules is simpler.
Certainly, above-described embodiment is only the preferred embodiment of the invention, and can also there be more changes, example in when practical application
Such as, line layer, metallic heat radiating plate and covered metal plate not necessarily make to be made of copper, and can use aluminium or other metal materials
It is made；Alternatively, other sizes can be selected according to actual conditions by making the copper plate thickness of line layer, such change can't
Influence the implementation of the present invention.
Finally it is emphasized that the invention is not restricted to the above embodiment, such as changing for the specific material of ceramic heat-dissipating body
The variations such as change, the material change of organic insulation medium should also be included within the scope of the invention as claimed.
Claims (10)
1.IGBT heat-radiating substrates, including
Line layer, the line layer include pad；
It is characterized in that：
The one side of the line layer is equipped with ceramic heat-dissipating body and metal heat sink, and the metal heat sink is included with through hole
Metallic heat radiating plate and covered metal plate, the ceramic heat-dissipating body is located in the through hole of the metallic heat radiating plate, described to cover
The lid metallic plate connection one side of the ceramic heat-dissipating body and the metal heat sink away from the line layer, the pad is by heat
It is conducted again to the covered metal plate after conduction to the ceramic heat-dissipating body；
Organic insulation medium is provided between the metal heat sink and the line layer, and the organic insulation medium is also set up
Between the ceramic heat-dissipating body and the metallic heat radiating plate.
2. IGBT heat-radiating substrates according to claim 1, it is characterised in that：
The ceramic heat-dissipating body includes a ceramic body, and upper surface and the lower surface of the ceramic body are all covered with layers of copper.
3. IGBT heat-radiating substrates according to claim 1 or 2, it is characterised in that：
The organic insulation medium includes epoxy resin or silane.
4.IGBT modules, including
Heat-radiating substrate, the heat-radiating substrate include line layer, and the line layer includes pad, IGBT is pasted on the pad
Chip；
It is characterized in that：
The one side of the line layer is equipped with ceramic heat-dissipating body and metal heat sink, and the metal heat sink is included with through hole
Metallic heat radiating plate and covered metal plate, the ceramic heat-dissipating body is located in the through hole of the metallic heat radiating plate, described to cover
The lid metallic plate connection one side of the ceramic heat-dissipating body and the metal heat sink away from the line layer, the pad is by heat
It is conducted again to the covered metal plate after conduction to the ceramic heat-dissipating body；
It is filled out between the metal heat sink and the line layer and organic dielectric is set, and the organic insulation medium is also set up
Between the ceramic heat-dissipating body and the metallic heat radiating plate.
5. IGBT modules according to claim 4, it is characterised in that：
The ceramic heat-dissipating body includes a ceramic body, and upper surface and the lower surface of the ceramic body are all covered with layers of copper.
The manufacturing method of 6.IGBT heat-radiating substrates, which is characterized in that including
In a surface mount ceramic heat-dissipating body of metal substrate；
Placement prepreg at the surface of the ceramic heat-dissipating body is pasted in the metal substrate, and described in placement
The metallic heat radiating plate with through hole is placed on the surface of prepreg, the ceramic heat-dissipating body is made to be located in the through hole, by institute
It states metal substrate to press with the ceramic heat-dissipating body, the metallic heat radiating plate, the prepreg, melts the prepreg
Organic dielectric is formed, the organic insulation medium is arranged between the metal substrate and the metallic heat radiating plate and institute
It states between ceramic heat-dissipating body and the metallic heat radiating plate；
Covered metal plate is formed in the one side away from the metal substrate of the ceramic heat-dissipating body and the metallic heat radiating plate；
Etching forms line layer on the metal substrate.
7. the manufacturing method of IGBT heat-radiating substrates according to claim 6, it is characterised in that：
To the metal substrate, the ceramic heat-dissipating body with after metallic heat radiating plate pressing, will overflow in the heat radiating metal
Plate is ground off with the organic insulation medium at the ceramic heat-dissipating body surface face.
8. the manufacturing method of the IGBT heat-radiating substrates according to claim 6 or 7, it is characterised in that：
The ceramic heat-dissipating body includes a ceramic body, and upper surface and the lower surface of the ceramic body are all covered with layers of copper；
The covered metal plate is formed in the one side of the layers of copper of the ceramic body lower surface.
The manufacturing method of 9.IGBT modules, which is characterized in that including
Ceramic heat-dissipating body is mounted on a surface of metal substrate；
Placement prepreg at the surface of the ceramic heat-dissipating body is pasted in the metal substrate, and described in placement
The metallic heat radiating plate with through hole is placed on the surface of prepreg, the ceramic heat-dissipating body is made to be located in the through hole, by institute
It states metal substrate to press with the ceramic heat-dissipating body, the metallic heat radiating plate, the prepreg, melts the prepreg
Organic dielectric is formed, the organic insulation medium is arranged on the metallic heat radiating plate and the ceramic heat-dissipating body, the gold
Between category substrate；
Covered metal plate is formed in the one side away from the metal substrate of the ceramic heat-dissipating body and the metallic heat radiating plate；
Etching forms line layer on the metal substrate, igbt chip is mounted on the pad of the line layer.
10. the manufacturing method of IGBT modules according to claim 9, it is characterised in that：
To the metal substrate, the ceramic heat-dissipating body with after metallic heat radiating plate pressing, will overflow in the heat radiating metal
Plate is ground off with the organic insulation medium at the ceramic heat-dissipating body surface face.
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| WO2018133070A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Circuit substrate and manufacturing method therefor, and circuit board and manufacturing method therefor |
| WO2018133069A1 (en) * | 2017-01-22 | 2018-07-26 | 乐健科技（珠海）有限公司 | Igbt module and method for manufacturing same |
| US11439039B2 (en) | 2020-12-07 | 2022-09-06 | Hamilton Sundstrand Corporation | Thermal management of electronic devices on a cold plate |
| US11439018B2 (en) | 2020-12-29 | 2022-09-06 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
| US11412618B2 (en) | 2020-12-29 | 2022-08-09 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier and method of manufacturing the same |
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| CN202444696U (en) * | 2012-02-27 | 2012-09-19 | 孙井斌 | High-thermal conductivity combined circuit board |
| CN102811554A (en) * | 2011-06-02 | 2012-12-05 | 熊大曦 | Base plate for high-power electronic device module and preparation method thereof |
| CN103188890A (en) * | 2011-12-30 | 2013-07-03 | 北大方正集团有限公司 | Manufacturing method for printed circuit board (PCB) and PCB |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102811554A (en) * | 2011-06-02 | 2012-12-05 | 熊大曦 | Base plate for high-power electronic device module and preparation method thereof |
| CN103188890A (en) * | 2011-12-30 | 2013-07-03 | 北大方正集团有限公司 | Manufacturing method for printed circuit board (PCB) and PCB |
| CN202444696U (en) * | 2012-02-27 | 2012-09-19 | 孙井斌 | High-thermal conductivity combined circuit board |
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Inventor after: Lin Weijian Inventor before: Zhong Shan Inventor before: Hu Qizhao Inventor before: Li Guoqing Inventor before: Lin Weijian |