CN109148411B - Heat dissipation substrate and preparation method thereof - Google Patents
Heat dissipation substrate and preparation method thereof Download PDFInfo
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- CN109148411B CN109148411B CN201810929978.4A CN201810929978A CN109148411B CN 109148411 B CN109148411 B CN 109148411B CN 201810929978 A CN201810929978 A CN 201810929978A CN 109148411 B CN109148411 B CN 109148411B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
Abstract
The invention relates to a heat dissipation substrate and a preparation method thereof, wherein the heat dissipation substrate comprises an insulating base material, a metal conductive member embedded in the insulating base material, a patterned conductive layer formed on the upper surface of the insulating base material and a metal heat dissipation layer formed on the lower surface of the heat dissipation substrate; the upper surface of the metal conductive component is provided with a power device mounting pad exposed out of the insulating base material, and a ceramic heat conduction component is arranged between the metal conductive component and the metal heat dissipation layer. The radiating substrate can simultaneously bear a power device and a non-power device, is convenient to realize miniaturization, and has good radiating performance and voltage resistance. The preparation method comprises the steps of forming the insulating base material through hot pressing and embedding the metal conductive component and the ceramic heat dissipation component in the insulating base material, and has the advantages of simple preparation process and low cost.
Description
Technical Field
The invention relates to a heat dissipation substrate and a preparation method thereof.
Background
Semiconductor power devices such as thyristors, GTOs (gate turn-off thyristors), GTRs (power transistors), IGBTs (insulated gate bipolar transistors), MOSFETs (power field effect transistors), power diodes, etc. generally carry large currents and generate a large amount of heat during operation, and in order to prevent the heat from accumulating to form high temperatures and affecting the performance thereof, the heat generated by the power semiconductor devices needs to be timely conducted out by a heat dissipation substrate serving as an electrical connection and mechanical carrying substrate thereof.
As electronic/electric products are developed toward lightweight conversion and small-sized conversion, more and more electronic/electric products are collectively designed with non-power devices such as semiconductor power devices and voltage stabilizing/rectifying/filtering devices on the same heat dissipating substrate. For example, chinese patent document CN107079582A discloses a heat dissipation substrate and a manufacturing method thereof, the heat dissipation substrate includes a first core layer and a second core layer, and an adhesive layer is connected between the first core layer and the second core layer; the at least one ceramic heat sink penetrates through the first core layer, the bonding layer and the second core layer, the first core layer comprises a thick copper circuit area and a thin copper circuit area, and the ceramic heat sink penetrates through the thick copper circuit area. By arranging the thick copper circuit and the thin copper circuit, the heat dissipation substrate can be used for simultaneously mounting a power device and a non-power device.
The manufacturing method of the heat dissipation substrate comprises the following steps: providing a first core plate with a first circuit layer, providing a second core plate with a second circuit layer, wherein a first through hole is formed in the first core plate, a second through hole is formed in the second core plate, and a bonding sheet with a third through hole is placed between the first core plate and the second core plate; placing the ceramic heat radiator in the first core plate, the second core plate and the bonding sheet, wherein the ceramic heat radiator passes through the first through hole, the second through hole and the third through hole; and after the first core plate, the second core plate, the bonding sheet and the ceramic radiator are pressed, copper is plated on the surfaces of the first core plate and the thick copper plate, and the thick copper plate is etched to form a third circuit layer.
In the above prior art, on one hand, the thick copper circuit region and the thin copper circuit region are both disposed on the surface of the heat dissipation substrate, which results in a larger wiring area required by the heat dissipation substrate and is not beneficial to miniaturization of the heat dissipation substrate; on the other hand, the ceramic radiator penetrates through the thick copper circuit area, and heat in the thick copper circuit area is difficult to diffuse rapidly through the ceramic radiator. In addition, the preparation method of the heat dissipation substrate needs to provide the first core board and the second core board, and the preparation process is complex and high in cost.
Disclosure of Invention
In view of the defects of the prior art, the main object of the present invention is to provide a heat dissipation substrate capable of simultaneously carrying power devices and non-power devices, facilitating miniaturization, and having good heat dissipation performance and voltage resistance.
Another object of the present invention is to provide a method for manufacturing a heat dissipating substrate at low cost, which can simultaneously carry power devices and non-power devices, is convenient for miniaturization, and has good heat dissipating performance and voltage resistance.
In order to achieve the above-described main object, a first aspect of the present invention provides a heat dissipating substrate comprising:
an insulating base material;
a metal conductive member embedded in the insulating base material; a power device mounting pad exposed out of the insulating base material is formed on the upper surface of the metal conductive member;
a ceramic heat dissipation member embedded in the insulating base material; a first connecting metal layer is formed on one side of the ceramic heat dissipation member adjacent to the metal conductive member, and the first connecting metal layer is connected with the conductive member in a welding mode;
a patterned conductive layer formed on the upper surface of the insulating substrate; the upper surface of the patterned conductive layer is flush with the upper surface of the device mounting pad;
and the metal heat dissipation layer is formed on the lower surface of the heat dissipation substrate and is in heat conduction connection with the ceramic heat dissipation member.
According to the technical scheme, the metal conductive member for bearing larger current is embedded in the insulating base material, so that the wiring area required by the patterned conductive layer can be reduced, and the miniaturization of the heat dissipation substrate is facilitated; the ceramic radiating member plays a role in heat conduction and electric insulation between the metal conductive member and the metal radiating layer, so that the voltage resistance of the radiating substrate can be improved, and heat generated by the power device can be quickly conducted to the metal radiating layer through the metal conductive member and the ceramic radiating member.
As a preferred embodiment of the present invention, the metal conductive member includes a metal body and one or more bosses extending upward from the metal body, and the power device mounting pad is formed on an upper surface of the boss. This has the advantage that the area of the upper surface of the insulating base material for forming the patterned conductive layer can be increased, facilitating further miniaturization of the heat dissipating substrate.
As a preferred embodiment of the present invention, the ceramic heat dissipation member is located within the outline of the metal conductive member in the thickness direction of the heat dissipation substrate. Therefore, on one hand, the use amount of high-cost ceramic heat dissipation components can be reduced, and the manufacturing cost of the heat dissipation substrate is reduced; on the other hand, the ceramic heat dissipation member can rapidly conduct heat in the metal conductive member to the metal heat dissipation layer.
In the present invention, the patterned conductive layer is preferably electrically connected directly to the device mounting pad. Alternatively, after the power device is mounted on the power device mounting pad, the power device/power device mounting pad and the patterned conductive layer are electrically connected by a wire.
In the present invention, the power device mounting pad may be formed only on the upper surface of the metal conductive member or may extend from the upper surface of the metal conductive member to the upper surface of the insulating base material. The power device mounting pad extends from the upper surface of the metal conductive member to the upper surface of the insulating base material, and there is an advantage in that the area of the power device mounting pad can be flexibly configured according to the needs of the power device.
According to an embodiment of the present invention, the insulating substrate includes a plurality of insulating medium layers and an adhesion layer disposed between the plurality of insulating medium layers, and the metal conductive member and the ceramic heat dissipation member are fixed within the insulating substrate by an adhesive material.
In the present invention, the ceramic heat-dissipating member is preferably an aluminum nitride, silicon nitride, or alumina ceramic member, and the metal conductive member is preferably a copper member.
According to an embodiment of the present invention, a second connection metal layer is formed on a side of the ceramic heat dissipation member away from the metal conductive member, and the metal heat dissipation layer is directly connected to the second connection metal layer. Thereby, it is possible to increase the connection reliability between the ceramic heat dissipation member and the metal heat dissipation layer and to reduce the thermal resistance therebetween.
In order to achieve another object of the present invention, a second aspect of the present invention provides a method of manufacturing a heat-dissipating substrate, including the steps of:
⑴ preparing a metal conductive member;
⑵ preparing a ceramic heat dissipation member having two opposite surfaces respectively formed with a first connection metal layer and a second connection metal layer;
⑶ solder connecting the metal conductive member and the first connecting metal layer;
⑷ laminating an insulating substrate with a containing through hole, wherein the insulating substrate comprises multiple insulating medium layers and prepregs arranged between the insulating medium layers, and a metal conductive member and a ceramic heat dissipation member are arranged in the containing through hole, wherein the upper and lower sides of the insulating substrate are respectively provided with a first copper-clad layer and a second copper-clad layer which are formed on the outer surface of the insulating medium layers;
⑸ hot-pressing the insulating substrate until the first copper-clad layer is flush with the upper surface of the metal conductive member and the second copper-clad layer is flush with the lower surface of the second connecting metal layer;
⑹ after step ⑸, the upper and lower surfaces of the heat-dissipating substrate are ground;
⑺ forming a third copper-clad layer on the upper surface of the heat-dissipating substrate and a fourth copper-clad layer on the lower surface of the heat-dissipating substrate;
⑻ the first copper-clad layer and the third copper-clad layer on the upper surface of the insulating substrate are etched to obtain a patterned conductive layer, and the upper surface of the metal conductive member is provided with power device mounting pads.
When the insulating base material is hot-pressed, the resin in the prepreg flows to fill the gaps among the insulating base material, the metal conductive component and the ceramic heat dissipation component, and the metal conductive component and the ceramic heat dissipation component are adhered and fixed in the insulating base material. The metal conductive member bearing larger current is embedded in the insulating base material, so that the wiring area required by the patterned conductive layer can be reduced, and the miniaturization of the heat dissipation substrate is facilitated; the ceramic heat dissipation component plays a role in heat conduction and electric insulation between the metal conductive component and the fourth copper-clad layer, so that the voltage resistance of the heat dissipation substrate can be improved, and heat generated by the power device can be quickly conducted to the fourth copper-clad layer through the metal conductive component and the ceramic heat dissipation component.
Preferably, the metal conductive member comprises a metal body and one or more bosses extending upwardly from the metal body; the ceramic heat dissipation member is located within a range of a contour of the metal conductive member in a thickness direction of the heat dissipation substrate. Therefore, the insulating base material can clamp and fix the metal conductive member from the upper side and the lower side, and the connection reliability between the metal conductive member and the insulating base material is improved.
To more clearly illustrate the objects, technical solutions and advantages of the present invention, the following detailed description of the present invention is provided with reference to the accompanying drawings and the detailed description.
Drawings
Fig. 1 is a schematic structural view of a heat dissipation substrate of embodiment 1 of the present invention;
fig. 2 is a schematic structural view of a metal conductive member in embodiment 1 of the heat dissipation substrate of the present invention;
fig. 3 is a schematic structural view of a ceramic heat dissipating member in embodiment 1 of the heat dissipating substrate of the present invention;
fig. 4 is a schematic view of a connection structure of a ceramic heat dissipation member and a metal conductive member in embodiment 1 of the heat dissipation substrate of the present invention;
fig. 5 is a schematic view of a plate stacking step in the method for manufacturing a heat dissipation substrate according to embodiment 1 of the present invention;
fig. 6 is a schematic structural view of a heat-dissipating substrate obtained by the hot-pressing and grinding steps in the method for manufacturing a heat-dissipating substrate according to embodiment 1 of the present invention;
fig. 7 is a schematic structural view of a heat dissipating substrate obtained by chemical plating and electroplating steps in the manufacturing method of the heat dissipating substrate of embodiment 1 of the present invention;
fig. 8 is a schematic structural view of a heat-dissipating substrate obtained in an etching step in the method for manufacturing a heat-dissipating substrate according to embodiment 1 of the present invention;
fig. 9 is a schematic structural view of a heat dissipation substrate in accordance with embodiment 2 of the present invention.
Detailed Description
Example 1 of Heat dissipating substrate
Fig. 1 shows the structure of a heat dissipating substrate in embodiment 1, which includes an insulating base 30, a metal conductive member 10 embedded in the insulating base 30, and a ceramic heat dissipating member 20; the ceramic heat dissipation member 20 is located within the outline of the metal conductive member 10 in the thickness direction of the heat dissipation substrate, and the thickness of the ceramic heat dissipation member 20 is smaller than that of the metal conductive member 10. The metal conductive member 10 includes a metal body 11 and one or more bosses 12 extending upward from the metal body 11, and the height (dimension in the thickness direction of the heat dissipating substrate) of the boss 12 is preferably 0.1 mm to 1 mm, for example, 0.4 mm in the present embodiment. The thickness of the ceramic heat dissipation member 20 is preferably 0.2 mm to 0.8 mm, for example, 0.35 mm in the present embodiment.
The upper surface of the boss 12 is formed with a power device mounting pad 41 extending to the upper surface of the insulating base material 30; the upper surface of the insulating substrate 30 is formed with a patterned conductive layer 42 directly electrically connected to the power device mounting pad 41, and the upper surface of the patterned conductive layer 42 is flush with the upper surface of the power device mounting pad 41. The thickness of the patterned conductive layer 42 is preferably 15 to 105 micrometers, more preferably 30 to 75 micrometers. The upper surface of the insulating substrate 30 is also formed with a solder resist layer 60, and the solder resist layer 60 exposes the power device mounting pads 41 and the non-power device mounting pads 421 in the patterned conductive layer 42.
The ceramic heat dissipation member 20 has first and second connection metal layers 21 and 22 formed on opposite surfaces thereof, respectively, and each of the first and second connection metal layers 21 and 22 includes a copper layer and may further include an intermediate metal layer, such as a titanium layer or a chromium layer, interposed between the copper layer and the ceramic heat dissipation member 20. The first connection metal layer 21 is connected to the metal conductive member 10 by soldering, the second connection metal layer 22 is directly connected to the metal heat dissipation layer 50 on the lower surface of the heat dissipation substrate, and the metal heat dissipation layer 50 includes a copper-clad layer 51 formed on the lower surface of the insulating substrate 30, and a copper-clad layer 52 connecting and covering the copper-clad layer 51 and the second connection metal layer 22. The thickness of the metal heat dissipation layer 50 (the total thickness of the copper-clad layer 51 and the copper-clad layer 52) is preferably 15 to 105 micrometers, and more preferably 30 to 75 micrometers.
The insulating base material 30 comprises a plurality of insulating medium layers 31 such as FR-4 plates and an adhesion layer 32 arranged among the plurality of insulating medium layers 31, the adhesion layer 32 is formed by prepreg through hot-pressing and curing, the metal conductive member 10 and the ceramic heat dissipation member 20 are fixed in the insulating base material 30 through bonding materials, and the insulating medium layers 31 on the upper side and the lower side of the insulating base material 30 clamp and fix the metal conductive member 10.
In embodiment 1, the ceramic heat dissipation member 20 is, for example, an aluminum nitride ceramic member, and the metal conductive member 10 is, for example, a copper member. In other embodiments, the metal conductive member 10 may be another metal member such as an aluminum member or an aluminum copper composite member, and the ceramic heat dissipation member 20 may be another ceramic member such as silicon nitride or alumina ceramic.
The heat dissipating substrate of example 1 may be prepared by:
s11: as shown in fig. 2, a metal conductive member 10 having a metal body 11 and a bump 12 is prepared, wherein the bump 12 is prepared by an etching process;
s12: as shown in fig. 3, a ceramic heat dissipation member 20 is prepared, and a first connection metal layer 21 and a second connection metal layer 22 are formed on both opposite surfaces of the ceramic heat dissipation member 20, respectively, wherein the ceramic heat dissipation member 20 may be obtained by cutting an aluminum nitride ceramic plate coated with copper on both sides;
s2: as shown in fig. 4, the metal body 11 and the first connecting metal layer 21 are solder-connected;
s3: as shown in fig. 5, an insulating substrate 30 with receiving through-holes is laminated (lamination step), the insulating substrate 30 includes a plurality of insulating dielectric layers 31 and a prepreg 32 between the insulating dielectric layers 31, and the metal conductive member 10 and the ceramic heat dissipation member 20 are located in the receiving through-holes of the insulating substrate 30; wherein, the outer surface of the insulating medium layer 31 positioned at the upper side of the insulating base material 30 is provided with a first copper-clad layer 401 (for example, an FR-4 single-sided copper-clad plate), and the outer surface of the insulating medium layer 31 positioned at the lower side of the insulating base material 30 is provided with a second copper-clad layer 51 (for example, an FR-4 single-sided copper-clad plate);
s4: hot-pressing the insulating substrate 30 until the first copper-clad layer 401 is flush with the upper surface of the boss 12 and the second copper-clad layer 51 is flush with the lower surface of the second connection metal layer 22; the prepreg 32 is subjected to a curing reaction to bond the insulating medium layer 31 by hot pressing, and resin in the prepreg 32 flows to fill a gap between the insulating base material 30 and the metal conductive member 10 and the ceramic heat dissipation member 20 in the hot pressing process, so that the metal conductive member 10 and the ceramic heat dissipation member 20 are fixed in the insulating base material 30 by the resin bonding material;
s5: grinding the upper surface and the lower surface of the heat dissipation substrate to remove the resin flowing to the surfaces of the first copper-clad layer 401, the second copper-clad layer 51, the boss 12 and the second connection metal layer 22 in the hot-pressing process, and further improving the degree of planarization of the upper surface and the lower surface of the heat dissipation substrate, so as to obtain the heat dissipation substrate shown in fig. 6;
s6: forming a third copper-clad layer 402 on the upper surface of the heat dissipation substrate and a fourth copper-clad layer 52 on the lower surface thereof by using a chemical plating and electroplating process;
s7: etching the first copper-clad layer 401 and the third copper-clad layer 402 on the upper surface of the insulating base material 30 to obtain a patterned conductive layer 42 including a non-power device mounting pad 421, and forming a power device mounting pad 41 on the upper surface of the bump 12;
s8: a solder resist layer 60 is formed on the upper surface of the heat dissipating substrate.
Example 2 of heat-dissipating substrate
Example 2 differs from example 1 only in that: the metal conductive member 110 in embodiment 2 does not have the upwardly extending boss structure.
In other embodiments of the present invention, the heat dissipation substrate may further have an inner conductive line formed in the insulating substrate, and the inner conductive line and the patterned conductive layer on the upper surface of the insulating substrate may be electrically connected through the conductive via.
Although the invention has been described with respect to preferred embodiments, it will be understood by those skilled in the art that various changes may be made without departing from the scope of the invention, and equivalents may be substituted for elements thereof without departing from the scope of the invention.
Claims (9)
1. A heat-dissipating substrate, comprising:
an insulating base material;
a metal conductive member embedded in the insulating base material; a power device mounting pad exposed out of the insulating base material is formed on the upper surface of the metal conductive member;
a ceramic heat dissipation member embedded in the insulating base material; a first connecting metal layer is formed on one side, adjacent to the metal conductive member, of the ceramic heat dissipation member, and the first connecting metal layer is connected with the conductive member in a welding mode;
a patterned conductive layer formed on the upper surface of the insulating substrate; the upper surface of the patterned conductive layer is flush with the upper surface of the device mounting pad;
the metal heat dissipation layer is formed on the lower surface of the heat dissipation substrate and is in heat conduction connection with the ceramic heat dissipation component;
wherein the metal conductive member includes a metal body and one or more bosses extending upward from the metal body, and the power device mounting pad is formed on an upper surface of the boss.
2. The heat dissipating substrate according to claim 1, wherein the ceramic heat dissipating member is located within a range of a contour of the metal conductive member in a thickness direction of the heat dissipating substrate.
3. The heat dissipating substrate of claim 1, wherein the patterned conductive layer is directly electrically connected to the power device mounting pads.
4. The heat dissipating substrate of claim 1, wherein the power device mounting pads extend from an upper surface of the metallic conductive member to an upper surface of the insulating base material.
5. The heat dissipating substrate of claim 1, wherein the insulating base includes a plurality of insulating medium layers and an adhesive layer disposed between the plurality of insulating medium layers, and the metal conductive member and the ceramic heat dissipating member are fixed within the insulating base by an adhesive material.
6. The heat dissipating substrate according to claim 1, wherein the ceramic heat dissipating member is an aluminum nitride, silicon nitride, or aluminum oxide ceramic member, and the metal conductive member is a copper member.
7. The heat dissipating substrate according to claim 1, wherein a second connection metal layer is formed on a side of the ceramic heat dissipating member remote from the metal conductive member, and the metal heat dissipating layer is directly connected to the second connection metal layer.
8. A method of preparing a heat-dissipating substrate, comprising the steps of:
⑴ preparing a metal conductive member comprising a metal body and one or more bosses extending upwardly from the metal body;
⑵ preparing a ceramic heat dissipation member having two opposite surfaces formed with a first connection metal layer and a second connection metal layer, respectively;
⑶ solder connecting the metal conductive member and the first connecting metal layer;
⑷ laminating an insulating substrate with a containing through hole, wherein the insulating substrate comprises multiple insulating medium layers and prepregs arranged between the insulating medium layers, and the metal conductive member and the ceramic heat dissipation member are arranged in the containing through hole, wherein the upper and lower sides of the insulating substrate are respectively provided with a first copper-clad layer and a second copper-clad layer which are formed on the outer surface of the insulating medium layer;
⑸ hot pressing the insulating substrate until the first copper-clad layer is flush with the upper surface of the metal conductive member and the second copper-clad layer is flush with the lower surface of the second connection metal layer;
⑹ after step ⑸, the upper and lower surfaces of the heat-dissipating substrate are ground;
⑺ forming a third copper-clad layer on the upper surface of the heat dissipation substrate and a fourth copper-clad layer on the lower surface of the heat dissipation substrate;
⑻ the first copper-clad layer and the third copper-clad layer on the upper surface of the insulating substrate are etched to obtain a patterned conductive layer, and the upper surface of the metal conductive member is provided with a power device mounting pad.
9. The method of producing a heat-dissipating substrate according to claim 8, wherein the ceramic heat-dissipating member is located within a range of a contour of the metallic conductive member in a thickness direction of the heat-dissipating substrate.
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